CN100583433C - Uninsulated double tower type diode module - Google Patents
Uninsulated double tower type diode module Download PDFInfo
- Publication number
- CN100583433C CN100583433C CN 200710025365 CN200710025365A CN100583433C CN 100583433 C CN100583433 C CN 100583433C CN 200710025365 CN200710025365 CN 200710025365 CN 200710025365 A CN200710025365 A CN 200710025365A CN 100583433 C CN100583433 C CN 100583433C
- Authority
- CN
- China
- Prior art keywords
- main electrode
- bridge plate
- shell
- uninsulated
- tower type
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Abstract
The present invention relates to an uninsulated double-tower diode, which comprises a substrate, a LED chip, a main electrode and a shell. Wherein, a lower end face of the LED chip is fixed on the substrate through a lower transitional layer. An upper end face of the LED chip is connected with one side of a connecting bridge plate. The connecting bridge plate is a slat provided with more than two bends. The other side of the connecting bridge plate is fixed on the substrate with an insulator. The shell with a locating groove on its top is fixed on the substrate. In addition, the main electrode is a slat provided with more than bevels. An inner side of the main electrode is connected with the connecting bridge plate. The other side of the main electrode extends out of the shell and wraps the shell top. A thru hole on the main electrode is positioned towards the locating groove on the shell. The upper and the lower transitional layer, the LED chip, the connecting bridge plate, the insulator and a connecting zone on one side of the main electrode is filled with soft elastic glue. The present invention reduces mechanical stress and thermal stress of the LED chip during mounting and operation and improves LED operating reliability.
Description
Technical field
The present invention relates to a kind of diode that is used for contravariant welding machine electric power and various Switching Power Supplies, especially relate to a kind of Uninsulated double tower type diode module.
Background technology
Uninsulated double tower structure diode is a kind of module product of standard profile size, because product design is simple, cost is low, and is applied widely.And present disclosed Uninsulated double tower type diode module, see shown in Figure 1, main electrode copper billet 5 ' and shell 9 ' by diode chip for backlight unit 3 ', base plate 1 ', band screw constitute, fixedly connected with main electrode copper billet 5 ' with base plate 1 ' by last molybdenum sheet 2 ', following molybdenum sheet 4 ' respectively in the top and bottom of diode chip for backlight unit 3 ', with epoxy resin perfusion, at high temperature solidify the three is fixed together between main electrode copper billet 5 ' and shell 9 ' and the base plate 1 '.Because main electrode is block structure, so be hard connection between the base plate, diode chip for backlight unit, main electrode.In the long-term work running,, make the semiconductor diode chip of diode inside also produce mechanical stress because diode chip for backlight unit will bear the influence of factors such as mechanical oscillation, mechanical stress and thermal stress.Because of also different with different its thermal coefficient of expansions of material of diode chip for backlight unit connection, can make diode chip for backlight unit produce thermal stress again, in case main electrode takes place to become flexible, will cause the cracked of diode chip for backlight unit.Conventional Uninsulated double tower type diode module is that base plate is installed on the radiator in installation process, then another electrode is installed on the main electrode copper billet with screw, the external force part power that main electrode is born directly affacts on the diode chip for backlight unit, can make diode chip for backlight unit bear external force and damage, cause diode characteristic to degenerate, reduce functional reliability.
Summary of the invention
The purpose of this invention is to provide a kind of mechanical stress and thermal stress that in installation and running, can reduce diode chip for backlight unit, can improve the Uninsulated double tower type diode module of diode operation reliability.
The present invention is that the technical scheme that achieves the above object is: a kind of Uninsulated double tower type diode module, comprise base plate, diode chip for backlight unit, main electrode and shell, it is characterized in that: the lower surface of described diode chip for backlight unit is fixedly connected on the base plate by following transition zone, the upper surface of diode chip for backlight unit by on cross the layer fixedly connected with a side that is connected bridge plate, connecting bridge plate is the batten with two above bendings, the opposite side that connects bridge plate is fixed on the base plate by insulator, and the shell that the top has detent is fixed on the base plate; Described main electrode is two battens with upper hem, the inboard of main electrode is with to be connected bridge plate fixedly connected, the opposite side of main electrode passes shell and overlays on cover top portion, and it is corresponding with detent on the housing that the main electrode that overlays on cover top portion is provided with via hole, and following transition zone, diode chip for backlight unit, a lateral irrigation of going up transition zone, the periphery that connects bridge plate, insulator and main electrode are annotated the soft elastic glue sealing.
The present invention adopts has following advantage after the technique scheme:
1, the both sides that the present invention will have the connection bridge plate of bending are separately fixed between diode chip for backlight unit and the main pole plate, and diode chip for backlight unit is connected on the base plate with a side that is connected bridge plate, after diode is subjected to mechanical stress and thermal stress, can discharge suffered stress by the distortion that connects bridge plate, main electrode is also for the batten of bending in addition, one side of main electrode is fixedly connected on and connects on the bridge plate, make main electrode also can discharge mechanical stress and thermal stress, therefore can be by connecting mechanical stress and the thermal stress that bridge plate and main electrode reduce diode chip for backlight unit, reduced effectively diode in long-term work because of mechanical shock and mechanical stress and thermal stress that heating produced.
2, the present invention is owing to be provided with the detent that is used for securing member location usefulness at the top of housing, and the main electrode that overlays on case top is provided with via hole and corresponding with detent on the housing, because the moment direction when screw is installed is a horizontal direction, therefore in the process of module assembling and electrode assembling, main electrode no longer is subjected to the exterior mechanical stress influence, so diode chip for backlight unit does not have the effect of mechanical stress, when the work operation, also can not be subjected to the influence of mechanical stress, improve the diode operation reliability.
3, the present invention by soft elastic glue to down transition zone, diode chip for backlight unit, go up transition zone, connect bridge plate, insulator and main electrode perfusion sealing; therefore diode chip for backlight unit can be protected by soft elastic glue; not only make connect bridge plate and main electrode can discharge the mechanical stress that produces because of vibration and work in the thermal stress that produced; and by soft elastic glue thermal stress can not acted on the diode chip for backlight unit, so the diode operation reliability is greatly improved.
Description of drawings
Below in conjunction with accompanying drawing embodiments of the invention are described in further detail.
Fig. 1 is the structural representation of existing Uninsulated double tower type diode module.
Fig. 2 is the structural representation of Uninsulated double tower type diode module of the present invention.
Wherein: the 1-base plate, the last transition zone of 2-, the 3-diode chip for backlight unit, transition zone under the 4-, the 5-cross structure, the 6-main electrode, the 61-via hole, the 7-insulator, the 8-soft elastic glue, the 9-shell, the 91-detent,
Embodiment
See Uninsulated double tower type diode module shown in Figure 1, comprise base plate 1, diode chip for backlight unit 3, main electrode 6 and shell 9, base plate 1 adopts nickel plating copper coin or other conductive plate, and the lower surface of diode chip for backlight unit 3 is fixedly connected on the base plate 1 by following transition zone 4, the upper surface of diode chip for backlight unit 3 is fixedly connected with a side that is connected bridge plate 5 by last transition zone 2, last transition zone 2 and following transition zone 4 all be can with diode chip for backlight unit 3, base plate 1 and the molybdenum sheet that connects bridge plate 5 connections, the tungsten sheet maybe can cut down sheet etc., by last, following transition zone make diode chip for backlight unit 3 reliably with base plate 1 be connected bridge plate 5 and connect, this connection can be adopted welding or fixed form such as bonding, particularly the thermal coefficient of expansion of molybdenum sheet approaches diode chip for backlight unit, reduces thermal stress.Connection bridge plate 5 of the present invention is the battens with two above bendings, as shown in Figure 2, connect bridge plate 5 and have three foldings, and connection bridge plate 5 is the trapezoidal of flat board middle part, two ends projection; Or connection bridge plate 5 is two ends flat board and middle part convex arcuate; Connecting bridge plate 5 also can be many foldings, connection bridge plate 5 after the bending can absorb and discharge mechanical stress and thermal stress, the opposite side that connects bridge plate 5 is fixed on the base plate 1 by insulator 7, this insulator 7 is potsherds that the two sides scribbled or be covered with metal level, can adopt sintering or bonding technology manufacturing, adopt welding or mode such as bonding with main electrode 6, to connect bridge plate 5, insulator 7 and base plate 1 fixedly connected reliably, 9 on shell is fixed on the base plate 1, the top of shell 9 has detent 91.See shown in Figure 1; main electrode 6 of the present invention is two battens with upper hem; same main electrode 6 after bending also has the characteristics that absorb and discharge mechanical stress and thermal stress; the inboard of main electrode 6 is with to be connected bridge plate 5 fixedly connected; the opposite side of main electrode 6 overlays on shell 9 tops after passing shell 9 and bending; and the main electrode 6 that overlays on shell 9 tops is provided with via hole 61; this via hole 61 is corresponding with detent 91 on the housing 9; the trough rim of detent 91 is provided with two parallel planes at least; can position nut; because main electrode 6 is not subjected to external force; can guarantee that diode chip for backlight unit 3 is not influenced by external force; bottom at detent 91 is provided with via hole; guarantee that bolt can not withstand on the housing 9; and following transition zone 4; diode chip for backlight unit 3; last transition zone 2; connect bridge plate 5; periphery perfusion soft elastic glue 8 sealings of insulator 7 and main electrode 6 one sides with join domain protection sealing, are full of shell space with the epoxy resin perfusion at last again.
Claims (7)
1, a kind of Uninsulated double tower type diode module, described double tower type diode is and is listed in two diode (led) modules on the base plate (1), comprise base plate (1), diode chip for backlight unit (3), main electrode (6) and shell (9), it is characterized in that: the lower surface of described diode chip for backlight unit (3) is fixedly connected on the base plate (1) by following transition zone (4), the upper surface of diode chip for backlight unit (3) by on cross the layer (2) fixedly connected with a side that is connected bridge plate (5), connecting bridge plate (5) is the batten with two above bendings, the opposite side that connects bridge plate (5) is fixed on the base plate (1) by insulator (7), and the shell (9) that the top has detent is fixed on the base plate (1); Described main electrode (6) is two battens with upper hem, the inboard of main electrode (6) is with to be connected bridge plate (5) fixedly connected, the opposite side of main electrode (6) passes shell (9) and overlays on shell (9) top, and the main electrode (6) that overlays on shell (9) top is provided with via hole (61) and corresponding with detent (91) on the housing (9), and following transition zone (4), diode chip for backlight unit (3), a lateral irrigation of going up transition zone (2), the periphery that connects bridge plate (5), insulator (7) and main electrode (6) are annotated soft elastic glues (8) sealing.
2, Uninsulated double tower type diode module according to claim 1 is characterized in that: described connection bridge plate (5) is trapezoidal for two ends flat board middle part projection.
3, Uninsulated double tower type diode module according to claim 1 is characterized in that: described connection bridge plate (5) is two ends flat board and middle part convex arcuate.
4, Uninsulated double tower type diode module according to claim 1 is characterized in that: the trough rim of the detent (91) at described shell (9) top is provided with two parallel planes at least, and the bottom is provided with via hole.
5, Uninsulated double tower type diode module according to claim 1 is characterized in that: described insulator (7) is the potsherd that the two sides scribbled or be covered with metal level.
6, Uninsulated double tower type diode module according to claim 1 is characterized in that: described upward transition zone (2) is molybdenum sheet or tungsten sheet.
7, Uninsulated double tower type diode module according to claim 1 is characterized in that: described transition zone (4) down is molybdenum sheet or tungsten sheet.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200710025365 CN100583433C (en) | 2007-07-26 | 2007-07-26 | Uninsulated double tower type diode module |
| PCT/CN2008/071765 WO2009012726A1 (en) | 2007-07-26 | 2008-07-25 | A non-insulating led |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200710025365 CN100583433C (en) | 2007-07-26 | 2007-07-26 | Uninsulated double tower type diode module |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101110415A CN101110415A (en) | 2008-01-23 |
| CN100583433C true CN100583433C (en) | 2010-01-20 |
Family
ID=39042391
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 200710025365 Expired - Fee Related CN100583433C (en) | 2007-07-26 | 2007-07-26 | Uninsulated double tower type diode module |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN100583433C (en) |
| WO (1) | WO2009012726A1 (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100583433C (en) * | 2007-07-26 | 2010-01-20 | 江苏宏微科技有限公司 | Uninsulated double tower type diode module |
| CN106783773A (en) * | 2016-12-13 | 2017-05-31 | 中航（重庆）微电子有限公司 | A kind of Non-insulation bi-tower type diode module |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06169030A (en) * | 1992-11-30 | 1994-06-14 | Kyocera Corp | Electronic component package, electronic component package board and manufacture of electronic component package board |
| JPH08153826A (en) * | 1994-11-30 | 1996-06-11 | Hitachi Ltd | Semiconductor integrated circuit device |
| KR100419611B1 (en) * | 2001-05-24 | 2004-02-25 | 삼성전기주식회사 | A Light Emitting Diode, a Lighting Emitting Device Using the Same and a Fabrication Process therefor |
| JP4674487B2 (en) * | 2005-04-25 | 2011-04-20 | パナソニック電工株式会社 | Surface mount light emitting device |
| CN201063345Y (en) * | 2007-07-26 | 2008-05-21 | 江苏宏微科技有限公司 | Non-insulation bi-tower type diode module |
| CN100583433C (en) * | 2007-07-26 | 2010-01-20 | 江苏宏微科技有限公司 | Uninsulated double tower type diode module |
-
2007
- 2007-07-26 CN CN 200710025365 patent/CN100583433C/en not_active Expired - Fee Related
-
2008
- 2008-07-25 WO PCT/CN2008/071765 patent/WO2009012726A1/en active Application Filing
Also Published As
| Publication number | Publication date |
|---|---|
| CN101110415A (en) | 2008-01-23 |
| WO2009012726A1 (en) | 2009-01-29 |
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Granted publication date: 20100120 Termination date: 20160726 |