CN100570886C - Reduce the structure and the manufacture method of transistor extension electrode electric capacity - Google Patents
Reduce the structure and the manufacture method of transistor extension electrode electric capacity Download PDFInfo
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- CN100570886C CN100570886C CNB2007101919808A CN200710191980A CN100570886C CN 100570886 C CN100570886 C CN 100570886C CN B2007101919808 A CNB2007101919808 A CN B2007101919808A CN 200710191980 A CN200710191980 A CN 200710191980A CN 100570886 C CN100570886 C CN 100570886C
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Abstract
The present invention is structure and the manufacture method that reduces transistor extension electrode electric capacity, and its structure is to make a PN junction electric capacity of connecting with mos capacitance below extension electrode and bonding region.Manufacture method is an extension n type silicon epitaxy layer on silicon substrate; Ion implantation doping is carried out on exposed silicon epitaxy surface; Under logical oxygen condition, generate oxide layer; Photoetching and selective corrosion SiO
2, expose the base implant window; At silicon chip surface deposit silicon dioxide and silicon nitride successively; Photoetching and selective etching Si
3N
4And SiO
2, expose emitter doping window, phosphorus or arsenic ion injection doping are carried out in the emitter region, annealing forms PN junction; Photoetching and selective etching Si
3N
4/ SiO
2, expose the base stage contact window; The splash-proofing sputtering metal film; Anti-carve the formation metal electrode, with wafer thinning, evaporation forms collector electrode.Advantage: reduce the extension electrode total capacitance, keep chip surface more smooth, improved the rate of finished products of chip hachure.
Description
Technical field
The present invention is a kind of structure and manufacture method of reducing transistor extension electrode electric capacity that is applicable to microwave transistor, microwave integrated circuit and high-speed digital integrated circuit manufacturing, belongs to semiconductor microactuator electronic manufacturing technology field.
Background technology
The measure of microwave transistor chip manufacturing comprises: (1) reduces emitter, base stage and collector resistance; (2) reduce emitter junction, collector junction and metal extension electrode electric capacity; (3) shorten charge carrier is transferred to collector electrode by emitter time.Therefore, microwave transistor often possesses meticulous vertical and horizontal physical dimension, and the spacing between unit emitter stripes width and base stripe width and emission bar and the base stripe narrows down to sub-micrometer scale, and the hachure process technology requires high.Because the requirement of lead-in wire bonding and current capacity, the area of bonding region and extension electrode dwindles and is restricted, and its area is often suitable with active region area, becomes the chief component of chip parasitic capacitance, has limited the raising of chip microwave property.Equally, in microwave integrated circuit and high-speed digital integrated circuit, except should the transistor of design frequency superior performance, also should reduce metal interconnecting wires as far as possible to the electric capacity between the Semiconductor substrate.Past often realizes by the thickness that increases deielectric-coating, but the increase of deielectric-coating thickness brings chip rough and uneven in surface, has further increased the difficulty of processing of microwave device hachure, becomes one of principal element of limited chip processed finished products rate.
Summary of the invention
Purpose of the present invention is intended to reduce base stage and emitter extension electrode to the mos capacitance between the collector electrode, proposes a kind of transistor extension electrode capacitive method that reduces.
Technical solution of the present invention: reducing transistor extension electrode capacitance structure is to make a PN junction of connecting with mos capacitance below extension electrode and bonding region, and PN junction also is an electric capacity (junction capacitance).By connecting of two electric capacity of mos capacitance and PN junction junction capacitance, reach the purpose that reduces the extension electrode total capacitance.Keep chip surface more smooth like this, be beneficial to improve hachure processed finished products rate.
Reduce the manufacture method of transistor extension electrode capacitance structure, its processing step is divided into,
(1) extension n type silicon epitaxy layer on silicon substrate,
(2) utilize the rotary spraying method, coating one deck is a photoresist to the organic thin film of ultraviolet light sensitivity on epitaxial wafer, see through mask with ultraviolet light then photoresist is carried out the selectivity exposure, again the epitaxial wafer after the exposure is sprayed development, remove the photoresist of exposure area, form the figure of photoresist masking
(3) the photoresist figure that forms with processing step (2) is a masking film, and ion implantation doping is carried out on exposed silicon epitaxy surface;
(4) generate oxide layer (SiO2) through 1100 ℃-1150 ℃ under logical oxygen condition, concurrently injected impurity forms the PN junction and the transistor active area boundary member PN junction of extension electrode below;
(5) photoetching and selective corrosion SiO2 expose the base implant window, then the base are injected doping, and the silicon chip after the cleaning carries out 1000 ℃ of temperature, and the annealing of 10 seconds time forms collector junction;
(6) adopt low-pressure chemical vapor phase deposition (LPCVD) process, at silicon chip surface deposit silicon dioxide successively (SiO2) and silicon nitride (Si3N4),
(7) photoetching and selective etching Si3N4 and SiO2 expose emitter doping window, and then phosphorus or arsenic ion are carried out in the emitter region and inject and mix, the silicon chip after the cleaning, carrying out temperature is 1000 ℃, annealing in 10 seconds of time forms PN junction, i.e. emitter junction,
(8) photoetching and selective etching Si3N4/SiO2 expose the base stage contact window,
(9) splash-proofing sputtering metal film; Anti-carve the formation metal electrode, i.e. emitter E and base stage B,
(10) back side abrasive disc, with wafer thinning, evaporation forms bottom electrode, i.e. collector electrode.
Advantage of the present invention: will below transistor extension electrode and bonding region, make a PN junction electric capacity of connecting with mos capacitance.Connect with mos capacitance by PN junction electric capacity, reduce the extension electrode total capacitance, and do not need to reduce extension electrode electric capacity by increasing deielectric-coating thickness merely.Thereby keep chip surface more smooth, be beneficial to improve the processed finished products rate of chip hachure.
Description of drawings
Fig. 1 is conventional transistor generalized section.
Fig. 2 is a transistor generalized section of the present invention.
Fig. 3 is the generalized section of silicon epitaxial wafer;
Fig. 4 is a generalized section behind the resist coating of epitaxial wafer surface, and photoresist is to the ultraviolet light sensitivity, the about 2 μ m of thickness;
Fig. 5 is that ultraviolet light sees through mask, to the generalized section of photoresist selectivity exposure;
Fig. 6 develops to obtain the photoresist masking generalized section, and the photoresist in ultraviolet photoetching district is developed corrosion, exposes the silicon epitaxy layer surface;
Fig. 7 is for sheltering the generalized section that the selectivity ion injects with photoresist;
Fig. 8 is that oxidation generates silicon dioxide (SiO
2), and the generalized section of formation PN junction electric capacity;
Fig. 9 is photoetching and corrodes SiO
2Form the base and inject window, and then band glue injects BF
2 +The generalized section of ion;
Figure 10 is short annealing, activates dopant ion, forms the collector junction generalized section;
Figure 11 is at silicon chip surface LPCVD technology deposit SiO
2/ Si
3N
4Generalized section;
Figure 12 is photoetching, etching Si
3N
4/ SiO
2Form emitter window, and carry out ion injection profile schematic diagram;
Figure 13 is short annealing, activates dopant ion, forms the generalized section of emitter junction;
Figure 14 is a chemical wet etching base stage contact window generalized section;
Figure 15 is the generalized section of base stage, emitter metal electrode;
Figure 16 is thinning back side and collector electrode metal generalized section;
Among the figure 1 is the base metal extension electrode; The 2nd, the emitter metal extension electrode; 3,4 spacer mediums that are respectively between emitter, base metal and the collector electrode n N-type semiconductor N, formation is connected across emitter-collector electrode mos capacitance and base stage-collector electrode mos capacitance respectively; The 5th, collector electrode metal; The 6th, the PN junction of extension electrode below constitutes PN junction electric capacity; P-is a transistor base, thickness 0.3 μ m-0.4 μ m; n
+Be the transistor emitter region, thickness 0.1 μ m-0.2 μ m; N is a silicon epitaxy layer, thickness 3 μ m-14 μ m; N++ is a silicon substrate material, and thickness is 380 μ m-560 μ m, the 7th, and photoresist, the 8th, ultraviolet light, the 9th, mask, the 10th, developer solution, the 11st, ion injects.
Embodiment
Pure semi-conducting material is that nonconducting insulator (can reach 10 as pure silicon resistivity
5More than the Ω cm), when mixing certain impurity element in the semi-conducting material, its conductive capability can increase several magnitude, show excellent conducting performance.For semiconductor silicon, when doped chemical is one or more elements in boron, the aluminium etc., show as movable positive charged particles conduction, this based semiconductor is called as P type (p type) semiconductor.When doped chemical is one or more elements in phosphorus, arsenic, the antimony etc., show as movable negative electrical charge particle conductive, this based semiconductor is called as N type semiconductor.Doped chemical concentration is high more, and then movable conducting particles concentration is high more, and conductive capability is strong more, and (highly doped silicon resistivity can reach 10
-3Ω cm magnitude).Usually use P
--, P
-, P, P
+, P
++And N
--, N
-, N, N
+, N
++The height of doping content in the difference qualitative representation semiconductor.All show as electric neutrality on N type (n type) semiconductor and P type (p type) the semiconductor macroscopic view.
The metallurgical interface that P type semiconductor and N type semiconductor are closely linked is become PN junction.In certain zone, positive and negative movable conducting particles concentration is zero near the PN junction both sides, and this zone is called as depletion region.P type semiconductor one side depletion region presents is with immovable negative electrical charge, and N type semiconductor one side depletion region presents is with immovable positive charge.The side width of depletion region that PN junction both sides doping content is low is wide, and the high side width of depletion region of doping content is narrow.When the doping content of PN junction both sides is very low, the width of depletion region broad.The not removable positive and negative charge number of PN junction both sides equates, still shows as electric neutrality on together the two kinds of semiconductor macroscopic views of combining.The PN junction depletion layer constitutes electric capacity.Electric capacity when the PN junction two ends do not add applied voltage is called PN junction zero electric capacity partially; When PN junction being added reverse bias voltage when (the N utmost point adds positive voltage, and the P utmost point adds negative voltage), depletion widths broadens, and PN junction electric capacity diminishes; Otherwise, PN junction is added forward bias voltage when (N type one end adds negative voltage, and P type one is rectified making alive), it is big that PN junction electric capacity becomes.
Heat growth SiO
2Resistivity can reach 10
15Ω cm-10
17Ω cm is a good insulator.Metal-SiO
2-doped semiconductor constitutes mos capacitance.
(1). select to mix the arsenic silicon substrate, resistivity≤0.003 Ω cm, thickness is 380 μ m; Extension is mixed phosphorus n type silicon epitaxy layer on this substrate, resistivity 0.75 Ω cm, and epitaxy layer thickness 3 μ m (as Fig. 3),
(2) utilize the rotary spraying method, coating one deck is to the organic thin film-photoresist (as Fig. 4) of ultraviolet light sensitivity on epitaxial wafer, see through mask with ultraviolet light then photoresist is carried out selectivity exposure (as Fig. 5), again the epitaxial wafer after the exposure being sprayed burn into develops, remove the photoresist of exposure region, form the photoresist masking figure as (Fig. 6)
(3) form the photoresist figure for sheltering with processing step (2), silicon chip is carried out selectivity inject B
+Or BF
2 +, implantation dosage 5 * 10
12Cm
-2, energy 80KeV forms extension electrode below, active area edge and base stage contact zone p type doping (as Fig. 7),
(4) silicon chip after the cleaning, under 1100 ℃ temperature, logical successively dried oxygen 10 minutes, logical wet oxygen 80 minutes, logical dried oxygen 10 minutes, logical chloroform or trichloroethylene 30 minutes led to dried oxygen 10 minutes, logical N
280 minutes, in the silicon chip surface growth approximately
SiO
2The impurity that injects in the processing step (3) is activated simultaneously, forms PN junction (as Fig. 8) with epitaxial loayer,
(5) silicon chip is carried out photoetching, and selective corrosion SiO
2, open the base and inject window; Then carry out selectivity BF
2 +Ion injects (as Fig. 9),
(6) silicon chip after the cleaning carries out 1000 ℃ of short annealings in 10 seconds, forms collector junction (as Figure 10),
(7). use LPCVD technology at silicon chip surface difference deposit SiO
2 
And Si
3N
4 Passivation layer (as Figure 11),
(8). photoetching, etching Si
3N
4/ SiO
2Open emitter region doping window; Then carry out selectivity As ion and inject (as Figure 12),
(9) silicon chip after the cleaning carries out 1000 ℃ of short annealings in 10 seconds, forms emitter junction (as Figure 13),
(10) photoetching, etching Si
3N
4/ SiO
2Open base metal contact window (as Figure 14),
(11) evaporate metal films so, and chemical wet etching formation base stage and emitter electrode figure (Figure 15),
(12) adopt surface grinding machine that silicon chip is carried out back side abrasive disc, with wafer thinning to 80 μ m; Silicon chip is carried out toluene and acetone successively to be cleaned; To evaporation Ti
/ Ni
/ Au
Form bottom electrode, i.e. collector electrode (as Figure 16).
(1) select to mix the arsenic silicon substrate, resistivity≤0.003 Ω cm, thickness is 560 μ m; Extension is mixed phosphorus n type silicon epitaxy layer on this substrate, resistivity 1.5 Ω cm, and epitaxy layer thickness 14 μ m (as Fig. 3),
(2) utilize the rotary spraying method, coating one deck is to the organic thin film-photoresist (as Fig. 4) of ultraviolet light sensitivity on epitaxial wafer, see through mask with ultraviolet light then photoresist is carried out selectivity exposure (as Fig. 5), again the epitaxial wafer after the exposure being sprayed burn into develops, remove the photoresist of exposure region, form photoresist masking figure (as Fig. 6)
(3) form the photoresist figure for sheltering with processing step (2), silicon chip is carried out selectivity inject B
+Or BF
2 +, implantation dosage 1 * 10
13Cm
-2, energy 120KeV forms extension electrode below, active area edge and base stage contact zone p type doping (as Fig. 7),
(4) silicon chip after the cleaning, under 1100 ℃ temperature, logical successively dried oxygen 20 minutes, logical wet oxygen 100 minutes, logical dried oxygen 20 minutes, logical chloroform or trichloroethylene 60 minutes led to dried oxygen 60 minutes, logical N
2100 minutes, in the silicon chip surface growth approximately
SiO
2The impurity that injects in the processing step (3) is activated simultaneously, forms PN junction (as Fig. 8) with epitaxial loayer,
(5) silicon chip is carried out photoetching, and selective corrosion SiO
2, open the base and inject window; Then carry out selectivity BF
2 +Ion injects (Fig. 9),
(6) silicon chip after the cleaning carries out 1000 ℃ of short annealings in 10 seconds, forms collector junction (as Figure 10),
(7) use LPCVD technology at silicon chip surface difference deposit SiO
2 And Si
3N
4 
Passivation layer (as Figure 11),
(8) photoetching, etching Si
3N
4/ SiO
2Open emitter region doping window; Then carry out selectivity As ion and inject (as Figure 12),
(9) silicon chip after the cleaning carries out 1000 ℃ of short annealings in 10 seconds, forms emitter junction (as Figure 13),
(10) photoetching, etching Si
3N
4/ SiO
2Open base metal contact window (as Figure 14),
(11) evaporate metal films so, and chemical wet etching formation base stage and emitter electrode figure (as Figure 15),
(12) adopt surface grinding machine that silicon chip is carried out back side abrasive disc, with wafer thinning to 100 μ m; Silicon chip is carried out toluene and acetone successively to be cleaned; To evaporation Ti
/ Ni
/ Au
Form bottom electrode, i.e. collector electrode (as Figure 16).
Claims (7)
1, reduce the manufacture method of transistor extension electrode capacitance structure, its processing step is divided into,
(1) extension n type silicon epitaxy layer on silicon substrate,
(2) utilize the rotary spraying method, coating one deck is a photoresist to the organic thin film of ultraviolet light sensitivity on epitaxial wafer, see through mask with ultraviolet light then photoresist is carried out the selectivity exposure, again the epitaxial wafer after the exposure is sprayed development, remove the photoresist of exposure area, form the figure of photoresist masking
(3) the photoresist figure that forms with processing step (2) is a masking film, and ion implantation doping is carried out on exposed silicon epitaxy surface;
(4) generate oxide layer SiO2 through 1100 ℃-1150 ℃ under logical oxygen condition, concurrently injected impurity forms the PN junction and the transistor active area boundary member PN junction of extension electrode below;
(5) photoetching and selective corrosion SiO2 expose the base implant window, then the base are injected doping, and the silicon chip after the cleaning carries out 1000 ℃ of temperature, and the annealing of 10 seconds time forms collector junction;
(6) adopt low-pressure chemical vapor phase deposition LPCVD process, at silicon chip surface deposit silicon dioxide SiO2 successively and silicon nitride Si3N4;
(7) photoetching and selective etching Si3N4 and SiO2 expose emitter doping window, then phosphorus or arsenic ion injection doping are carried out in the emitter region, the silicon chip after the cleaning, and carrying out temperature is 1000 ℃, annealing in 10 seconds of time forms PN junction, i.e. emitter junction;
(8) photoetching and selective etching Si3N4/SiO2 expose the base stage contact window;
(9) splash-proofing sputtering metal film; Anti-carve the formation metal electrode, i.e. emitter E and base stage B;
(10) back side abrasive disc, with wafer thinning, evaporation forms bottom electrode, i.e. collector electrode.
2, the manufacture method that reduces transistor extension electrode electric capacity according to claim 1 is characterized in that silicon substrate selects to mix arsenic, resistivity≤0.003 Ω cm, and thickness is 380 μ m-560 μ m; Extension is mixed phosphorus n type silicon epitaxy layer on this substrate, resistivity 0.75-1.5 Ω cm, epitaxy layer thickness 3 μ m-14 μ m.
3, the manufacture method that reduces transistor extension electrode electric capacity according to claim 1 is characterized in that forming the photoresist figure for sheltering with processing step (2), silicon chip is carried out selectivity inject B
+Or BF
2 +, implantation dosage 5 * 10
12Cm
-2-1 * 10
13Cm
-2, energy 80KeV-120KeV forms extension electrode below, active area edge and base stage contact zone p type and mixes.
4, the manufacture method that reduces transistor extension electrode electric capacity according to claim 1, silicon chip after it is characterized in that cleaning, under 1100 ℃ temperature, logical dried oxygen 10-20 minute successively, logical wet oxygen 80 minutes-100 minutes, logical dried oxygen 10 minutes-20 minutes, logical chloroform or trichloroethylene 30 minutes-60 minutes, logical dried oxygen 10 minutes-60 minutes, logical N
280 minutes-100 minutes, grow about 8000 at silicon chip surface
SiO
2The impurity that injects in processing step (3) is activated simultaneously, forms PN junction with epitaxial loayer.
5, the manufacture method that reduces transistor extension electrode electric capacity according to claim 1 is characterized in that silicon chip is carried out photoetching, and selective corrosion SiO
2, open the base implant window; Then carry out selectivity BF
2 +Ion injects.
6, the manufacture method that reduces transistor extension electrode electric capacity according to claim 1 is characterized in that with the LPCVD process at silicon chip surface difference deposit SiO
21000
-2000
And Si
3N
41000
-1700
Passivation layer.
7, the manufacture method that reduces transistor extension electrode electric capacity according to claim 1 is characterized in that adopting surface grinding machine that silicon chip is carried out back side abrasive disc, with wafer thinning to 80 μ m-100 μ m; Silicon chip is carried out toluene and acetone successively to be cleaned; To evaporation Ti 500
-1500
/ Ni 3000
-5000
/ Au3000
-5000
Form bottom electrode, i.e. collector electrode.
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| CN100570886C true CN100570886C (en) | 2009-12-16 |
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Effective date of registration: 20160923 Address after: 225101 No. 188 east Wu State Road, Jiangsu, Yangzhou Patentee after: YANGZHOU GUOYU ELECTRONICS CO., LTD. Address before: 210016 Zhongshan East Road, Jiangsu, China, No. 524, No. Patentee before: No.55 Inst., China Electronic Science and Technology Group Corp. |