CN100570880C - Make the method for complementary MOS image sensor - Google Patents
Make the method for complementary MOS image sensor Download PDFInfo
- Publication number
- CN100570880C CN100570880C CNB2007100877846A CN200710087784A CN100570880C CN 100570880 C CN100570880 C CN 100570880C CN B2007100877846 A CNB2007100877846 A CN B2007100877846A CN 200710087784 A CN200710087784 A CN 200710087784A CN 100570880 C CN100570880 C CN 100570880C
- Authority
- CN
- China
- Prior art keywords
- layer
- contact mat
- protective layer
- addition
- dielectric layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Abstract
A kind of method of making cmos image sensor.At first, provide substrate, and this substrate have sensor array district (sensor array region) and surrounding zone.Form contact mat then in this suprabasil this surrounding zone, and cover dielectric layer in this substrate and expose this contact mat surface.Then form covering layer in this dielectric layer and this contact mat surface, this covering layer of patterning then is to form light trap layer (optical shielding layer) and form protective layer on this contact mat on this dielectric layer of this surrounding zone.Form a plurality of colored filters subsequently on this dielectric layer in this sensor array district and form flatness layer on these a plurality of colored filters and this light trap floor.Form a plurality of lenticules at last in this flatness layer surface.
Description
Technical field
The present invention relates to a kind of method of making cmos image sensor.
Background technology
Along with the constantly exploitation and growth of electronic goods such as digital camera, scanner, the increase that the consumption market is also lasting to the demand of imageing sensor.Generally speaking, imageing sensor commonly used has at present comprised charge coupled sensor (charge coupled device, CCD sensor) and complementary MOS image sensor (CMOS image sensor, CIS) two big classes.Wherein, because cmos image sensor has low operating voltage, low power consumption and high operating efficiency, can carry out arbitrary access factors such as (random access) as required, and can be integrated in present semiconductor technology and make in a large number, therefore be subjected to the utmost point and use widely.
The light sensitivity principles of cmos image sensing apparatus is incident ray to be divided into the combination of various different wave length light, received by the suprabasil a plurality of photo-sensitive cells of semiconductor (optically sensitive element) respectively again, and be converted to different strong and weak digital signals.For example, incident light is divided into the combination of red, blue, green three coloured light lines, received by corresponding photodiode (photodiode) again, and then be converted to digital signal.Therefore, must form colour filter array to distinguish the wavelength of incident ray in each optical pickocff top.
Please refer to Fig. 1 to Fig. 4, Fig. 1 to Fig. 4 is the schematic diagram of known making cmos image sensor.As shown in Figure 1, at first provide the semiconductor-based end 12, and definition there are sensor array district (sensor array region) 14 and surrounding zone 16 at the semiconductor-based end 12.Surface formation is a plurality of in the semiconductor-based ends 12 then is used for collecting the photodiode 18 of light, a plurality of CMOS (Complementary Metal Oxide Semiconductor) (CMOS) transistor (not shown) and a plurality of shallow trench isolation from (shallow trench isolation STI) 20 is surrounded on around the photodiode 18.Then deposit at least dielectric layer 22 on the semiconductor-based end 12, the metal level 24 that forms a plurality of patternings then is on the dielectric layer 22 in sensor array district 14, be used for constituting the metal interconnecting of cmos image sensor and can increase the blocking effect of scattered beam, and the metal level of at least one patterning is used as the contact mat 26 that connects outer member on the dielectric layer 22 of surrounding zone 16.Deposit another dielectric layer 28 subsequently on dielectric layer 22 and cover metal level 24 and contact mat 26, on dielectric layer 28, form patterning photoresist layer (not shown) then, and utilize this patterning photoresist layer to be used as mask and carry out etch process, remove the dielectric layer 28 that partly is positioned on the contact mat 26, in dielectric layer 28, to form opening 30 and to expose contact mat 26 surfaces.
As shown in Figure 2, then form covering layer 32 on dielectric layer 28 and cover contact mat 26 surfaces.Wherein, covering layer 32 can be made up of lighttight metal levels such as titanium or titanium nitrides.Then as shown in Figure 3, form patterning photoresist layer (not shown) on covering layer 32, and utilize this patterning photoresist layer to be used as mask and carry out etch process, remove the covering layer 32 on contact mat 26 surfaces and the part dielectric layer 28, to form light trap layer 34 in the surrounding zone 16 of proximity sense array area 14 on dielectric layer 28, be used for blocking the external environment light source and scatter in the sensor array district 14 via surrounding zone 16.
As shown in Figure 4, then form a plurality of chromatic filter layers (not shown) in regular turn on the dielectric layer 28 in sensor array district 14, carry out multiexposure, multiple exposure and developing process then, forming a plurality of colored filters 36, and each photodiode 18 on each surface, the 36 corresponding semiconductor-based ends 12 of colored filter.Wherein, colored filter 36 can comprise the filter of Red lightscreening plate, green color filter, blue color filter or other colors.Form flatness layer 38 then in colored filter 36 surface and cover light trap layer 34.Then form in flatness layer 38 surfaces by acryl (acrylate material) polymer layer (not shown) that material constituted, and expose, development and baking process, form a plurality of lenticules (micro-lens) 40 so that 36 tops of the colored filter on dielectric layer 28 are corresponding, and then finish the making of cmos image sensor 42.
It should be noted that the exposure and the developing process that when the optical elements such as colored filter, flatness layer and lenticule of known making cmos image sensor, can carry out usually repeatedly.Because being arranged on the contact mat of the surrounding zone of cmos image sensor generally is made of aluminium, and the surface of contact mat just is exposed to outside the dielectric layer before above-mentioned optical element is made, therefore follow-up when carrying out developing process employed developer can repeatedly corrode the contact mat that is exposed state, and then make contact mat produce the phenomenon of pit (pitting).This phenomenon produces pothole or out-of-flatness except meeting makes contact mat surface, more can influence the follow-up reliability that is connected with other elements when carrying out routing under the serious situation.
Summary of the invention
Therefore main purpose of the present invention provides a kind of method of making cmos image sensor, makes contact mat produce the situation of pit easily when improving known making cmos image sensor.
For reaching above-mentioned goal of the invention, the present invention discloses a kind of method of making cmos image sensor.At first, provide substrate, and this substrate have sensor array district and surrounding zone.Form contact mat then in this suprabasil this surrounding zone, and cover dielectric layer in this substrate and form opening to expose this contact mat surface.Then form covering layer in this dielectric layer and this contact mat surface; this covering layer of patterning then is with in forming light trap floor (optical shielding layer) on this dielectric layer in this sensor array district and form protective layer on this contact mat surface that exposes.Form a plurality of colored filters subsequently on this dielectric layer in this sensor array district and form flatness layer on these a plurality of colored filters and this light trap floor.Form a plurality of lenticules at last in this flatness layer surface.
The present invention utilizes same covering layer to form protective layer on contact mat when utilizing the patterning covering layer to make the light trap layer; therefore the surface of employed developer erosion contact mat causes the phenomenon of pit when can be under the situation that does not increase additional technique preventing follow-up making colored filter, flatness layer and lenticule by this protective layer, and then improves the follow-up reliability that contact point is connected with other elements when carrying out routing.
Description of drawings
Fig. 1 to Fig. 4 is the schematic diagram of known making cmos image sensor.
Fig. 5 to Figure 10 makes the schematic diagram of cmos image sensor for the preferred embodiment of the present invention.
Description of reference numerals
Sensor array district, the 12 semiconductor-based ends 14
16 surrounding zones, 18 photodiodes
20 shallow trench isolations are from 22 dielectric layers
24 metal levels, 26 contact mats
28 dielectric layers, 30 openings
32 covering layers, 34 light trap layers
36 colored filters, 38 flatness layers
40 lenticules, 42 cmos image sensors
Sensor array district, the 52 semiconductor-based ends 54
56 surrounding zones, 58 photodiodes
60 shallow trench isolations are from 62 dielectric layers
64 metal levels, 66 contact mats
68 dielectric layers, 70 openings
72 covering layers, 74 light trap layers
76 protective layers, 78 colored filters
80 flatness layers, 82 polymer layers
84 lenticules, 86 cmos image sensors
Embodiment
Please refer to Fig. 5 to Figure 10, Fig. 5 to Figure 10 makes the schematic diagram of cmos image sensor for the preferred embodiment of the present invention.As shown in Figure 5, at first provide the semiconductor-based end 52, and definition there are sensor array district 54 and surrounding zone 56 at the semiconductor-based end 52.Surface formation is a plurality of in the semiconductor-based ends 52 then is used for collecting the photodiode 58 of light, a plurality of CMOS (Complementary Metal Oxide Semiconductor) (CMOS) transistor (not shown) and a plurality of shallow trench isolation from (shallow trench isolation STI) 60 is surrounded on around the photodiode 58.Then deposit at least one dielectric layer 62 on the semiconductor-based end 52.The metal level 64 that forms a plurality of patternings then is on the dielectric layer 62 in sensor array district 54, be used for constituting the metal interconnecting of cmos image sensor and can increase the blocking effect of scattered beam, and the metal level of at least one patterning is used as the contact mat 66 that connects outer member on the dielectric layer 62 of surrounding zone 56.Deposit another dielectric layer 68 subsequently on dielectric layer 62 and cover metal level 64 and contact mat 66.On dielectric layer 68, form patterning photoresist layer (not shown) then, and utilize this patterning photoresist layer to carry out etch process as mask, remove the dielectric layer 68 that partly is positioned on the contact mat 66, in dielectric layer 68, to form opening 70 and to expose contact mat 66 surfaces.
As shown in Figure 6, then form covering layer 72 on dielectric layer 68 and cover contact mat 66 surfaces.According to a preferred embodiment of the invention, covering layer 72 can be made up of lighttight metal levels such as titanium or titanium nitrides.Yet, be not limited to these materials, according to another embodiment of the present invention, covering layer 72 can be the oxide layer by silica constituted again.
As shown in Figure 7; then form patterning photoresist layer (not shown) on covering layer 72; and utilize this patterning photoresist layer to be used as mask and carry out etch process; remove the covering layer 72 on the part dielectric layer 68 and keep the covering layer 72 that contact mat 66 surfaces are covered; to form light trap layer 74 in the surrounding zone 56 of proximity sense array area 54 on dielectric layer 68; be used for blocking the external environment light source and scatter in the sensor array district 54, and go up protective mulch 76 in opening 70 places and contact mat 66 surfaces of dielectric layer 68 via surrounding zone 56.
It should be noted that; because the while was in forming the light trap layer on the dielectric layer and form protective layer on contact mat when the present invention carried out design transfer to covering layer; therefore can by be covered in protective layer on the contact mat prevent follow-up when carrying out exposure imaging employed developer corrode the surface of contact mat, and then cause the situation of contact mat generation pit.Yet; be not limited to this production method; the present invention's demand of visual technology again adjusts the zone that is covered when covering layer 72 carries out design transfer, for example 54 does not form light trap floor 74 and only form protective layer 76 on contact mat 66 in the sensor array district, and this all belongs to the scope that the present invention is contained.
As shown in Figure 8, then form a plurality of chromatic filter layers (not shown) in regular turn on the dielectric layer 68 in sensor array district 54, carry out multiexposure, multiple exposure and developing process then, forming a plurality of colored filters 78, and each photodiode 58 on each surface, the 78 corresponding semiconductor-based ends 52 of colored filter.Wherein, colored filter 78 can comprise the filter of Red lightscreening plate, green color filter, blue color filter or other colors.Form flatness layer 80 then in colored filter 78 surface and cover light trap layer 74, and form the polymer layer (not shown) that constituted by the acryl material in flatness layer 80 surfaces.Then expose and developing process, on flatness layer 80, to form the polymer layer 82 of a plurality of patternings.
As shown in Figure 9, and then remove the protective layer 76 that is covered in contact mat 66 surfaces.As before described, covering layer 72 can be the oxide layer by silica constituted again except being made up of titanium or titanium nitride.Be made of titanium or titanium nitride as covering layer 72, the present invention can carry out wet etching process, and (ammonium hydrogen peroxide mixture APM) removes protective layer 76 to utilize ammoniacal liquor-mixed solution of hydrogen peroxide.As the oxide layer that covering layer 72 is made up of oxide, then can select other industries etchant commonly used to carry out wet etching process to remove protective layer 76.Yet the step of removal contact mat 66 sealers 76 can be arranged in all colored filters and form between any step afterwards.
As shown in figure 10, carry out baking process subsequently, form a plurality of lenticules (micro-1ens) 84 with colored filter 78 tops corresponding on dielectric layer 68, and then finish the making of cmos image sensor 86.Yet, being not limited to this production order, the present invention can adjust the order of removing protective layer 76 according to different process requirements again.For instance; the present invention can finish the making of lenticule 84 earlier under the situation that still is coated with protective layer 76 on the contact mat 66; for example in regular turn to polymer layer expose, development and baking process; and then carry out etch process and remove the protective layer 76 that is covered in contact mat 66 surfaces; also or after flatness layer 80 forms promptly remove this protective layer 76, this also all belongs to scope of the present invention.
In sum; method compared to known making cmos image sensor; the present invention utilizes same covering layer to form protective layer on contact mat when utilizing the patterning covering layer to make the light trap layer; therefore the surface of employed developer erosion contact mat causes the phenomenon of pit when can be under the situation that does not increase additional technique preventing follow-up making colored filter, flatness layer and lenticule by this protective layer, and then improves the follow-up reliability that contact point is connected with other elements when carrying out routing.
The above only is the preferred embodiments of the present invention, and all equalizations of doing according to claim of the present invention change and modify, and all should belong to covering scope of the present invention.
Claims (20)
1. method of making cmos image sensor comprises step:
Substrate is provided, and this substrate has sensor array district and surrounding zone;
Form contact mat in this suprabasil this surrounding zone;
The covering dielectric layer is in this substrate and form opening to expose this contact mat surface;
Form covering layer and cover this dielectric layer and this contact mat surface;
This covering layer of patterning is with in forming the light trap layer on this dielectric layer of this surrounding zone and form protective layer on this contact mat surface that exposes;
Form a plurality of colored filters on this dielectric layer in this sensor array district;
Form flatness layer on these a plurality of colored filters and this light trap layer; And
Form a plurality of lenticules in this flatness layer surface.
2. the method for claim 1, wherein this method has one to remove between step any two steps after forming a plurality of colored filters of protective layer.
3. method as claimed in claim 2, wherein this covering layer, this light trap layer and this protective layer are made up of titanium or titanium nitride.
4. method as claimed in claim 2, wherein this method before forming these a plurality of lenticules, include in addition form patterning polymer layer in this flatness layer surface.
5. method as claimed in claim 4, wherein this method after the polymer layer that forms this patterning, comprise in addition carry out baking process with these a plurality of lenticules of formation in this flatness layer surface.
6. method as claimed in claim 5, wherein this method is contained in this contact mat surface in addition and removes this protective layer before carrying out this baking process.
7. method as claimed in claim 3, wherein this method comprises in addition and utilizes ammoniacal liquor-mixed solution of hydrogen peroxide to remove this protective layer.
8. method as claimed in claim 5, wherein this method is contained in this contact mat surface in addition and removes this protective layer after carrying out this baking process.
9. method as claimed in claim 2, wherein this covering layer, this light trap layer and this protective layer are made up of silica.
10. method as claimed in claim 9, wherein this method comprises in addition and carries out wet etching process and remove this protective layer.
11. a method of making cmos image sensor comprises step:
Substrate is provided, and this substrate has sensor array district and surrounding zone;
Form contact mat in this suprabasil this surrounding zone;
Cover dielectric layer in this substrate and expose this contact mat surface;
Form the patterning protective layer in this contact mat surface;
Form a plurality of colored filters on this dielectric layer in this sensor array district;
Form flatness layer on these a plurality of colored filters; And
Form a plurality of lenticules in this flatness layer surface.
12. method as claimed in claim 11, wherein this protective layer is made up of titanium or titanium nitride.
13. method as claimed in claim 11, wherein this method has one to remove between step any two steps after forming a plurality of colored filters of protective layer.
14. method as claimed in claim 13, wherein this method before forming these a plurality of lenticules, include in addition form patterning polymer layer in this flatness layer surface.
15. method as claimed in claim 14, wherein this method after the polymer layer that forms this patterning, comprise in addition carry out baking process with these a plurality of lenticules of formation in this flatness layer surface.
16. method as claimed in claim 15, wherein this method is contained in this contact mat surface in addition and removes this protective layer before carrying out this baking process.
17. method as claimed in claim 12, wherein this method comprises in addition and utilizes ammoniacal liquor-mixed solution of hydrogen peroxide to remove this protective layer.
18. method as claimed in claim 15, wherein this method is contained in this contact mat surface in addition and removes this protective layer after carrying out this baking process.
19. method as claimed in claim 11, wherein this protective layer is made up of silica.
20. method as claimed in claim 19, wherein this method comprises in addition and carries out wet etching process and remove this protective layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2007100877846A CN100570880C (en) | 2007-03-19 | 2007-03-19 | Make the method for complementary MOS image sensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2007100877846A CN100570880C (en) | 2007-03-19 | 2007-03-19 | Make the method for complementary MOS image sensor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101271908A CN101271908A (en) | 2008-09-24 |
| CN100570880C true CN100570880C (en) | 2009-12-16 |
Family
ID=40005717
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB2007100877846A Active CN100570880C (en) | 2007-03-19 | 2007-03-19 | Make the method for complementary MOS image sensor |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN100570880C (en) |
-
2007
- 2007-03-19 CN CNB2007100877846A patent/CN100570880C/en active Active
Also Published As
| Publication number | Publication date |
|---|---|
| CN101271908A (en) | 2008-09-24 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US6765276B2 (en) | Bottom antireflection coating color filter process for fabricating solid state image sensors | |
| US6979588B2 (en) | Method for manufacturing CMOS image sensor having microlens therein with high photosensitivity | |
| US6933168B2 (en) | Method and apparatus for employing a light shield to modulate pixel color responsivity | |
| CN100383978C (en) | Image sensor having large micro-lenses at the peripheral regions | |
| CN100466282C (en) | CMOS image sensor and manufacturing method thereof | |
| US20090189055A1 (en) | Image sensor and fabrication method thereof | |
| US7605980B2 (en) | Image sensor and fabricating method thereof | |
| US7579209B2 (en) | Image sensor and fabricating method thereof | |
| KR20060087218A (en) | Image sensor and method of fabricating the same | |
| KR100937654B1 (en) | Image Sensor and Method of Manufaturing Thereof | |
| KR100717281B1 (en) | Method of forming image sensor and the sensor so formed | |
| US7579625B2 (en) | CMOS image sensor and method for manufacturing the same | |
| KR20080058549A (en) | Image sensor and method of manufacturing image sensor | |
| KR100829378B1 (en) | Image sensor and method of manufactruing the same | |
| JP2010062417A (en) | Solid-state imaging device and method of manufacturing the same | |
| US20050281942A1 (en) | Method for forming microlens of image sensor | |
| US20090140360A1 (en) | Image sensor and fabricating method thereof | |
| CN101373737B (en) | Method for preparing CMOS image sensing element | |
| CN100570880C (en) | Make the method for complementary MOS image sensor | |
| CN101118298A (en) | process for manufacturing colorful filtering array | |
| US8325262B2 (en) | Image sensor and method for manufacturing the same | |
| CN100466226C (en) | Method for manufacturing CMOS image sensor | |
| US20080122021A1 (en) | Image sensor | |
| KR100875155B1 (en) | Micro lens manufacturing method of image sensor | |
| KR100672662B1 (en) | CMOS Image Sensor and method of making the same |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant |