CN100561605C - Structure of transparent conductive film and manufacture method thereof - Google Patents
Structure of transparent conductive film and manufacture method thereof Download PDFInfo
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- CN100561605C CN100561605C CNB2005100906271A CN200510090627A CN100561605C CN 100561605 C CN100561605 C CN 100561605C CN B2005100906271 A CNB2005100906271 A CN B2005100906271A CN 200510090627 A CN200510090627 A CN 200510090627A CN 100561605 C CN100561605 C CN 100561605C
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- oxide
- transparent conductive
- conductive film
- indium
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Abstract
The invention provides a kind of structure of transparent conductive film and manufacture method thereof, be specially a kind of structure of transparent conductive film and manufacture method thereof of utilizing nano-oxide particles to form.Form a transparent conductive film with traditional wet dip method on a transparency carrier, special heat treatment step during by film forming forms film surface and has periodically and on the whole parallel surface relief structure.This structure can be eliminated the mixed and disorderly striped of visible light reflection, also can effectively reduce dazzle.
Description
Technical field
The invention relates to a kind of structure of transparent conductive film and relevantly a kind ofly utilize heat treated mode on transparent conductive film, to form periodically and the manufacture method of on the whole parallel relief fabric.
Background technology
(Indium Tin Oxide ITO) waits nesa coating, mostly uses dry-type and physical method film forming such as magnetic control sputtering plating or vacuum evaporation at present on volume production to be used for the tin indium oxide of photovoltaic such as flat-panel screens, light-emitting diode, contact panel.The subject matter of physical method film forming is that film-forming apparatus and target are all quite expensive, and the utilance of filmogen is extremely low, so manufacturing cost is high.
On the other hand, be raw material with the conductive oxide powder of particle diameter tens nanometer, be deployed into the transparent conductive coating of suspension, and make film with wet chemistry film forming method, be a kind of easy and transparent conductive film film technique rapidly.This wet chemistry becomes the advantage of embrane method to have: need not vacuumize, lower, the available spraying of film-forming apparatus cost, wire mark, rotary coating or the multiple mode film forming of impregnating, to make the high amplitude of adjusting with film resistor of the utilance of large tracts of land film forming and double spread, filmogen easily very big etc.Yet when forming transparent conductive film with suspension and wet chemical process, its suspension particle flows at substrate surface and reaches the nuance that dry situation often has the part.This nuance is for the not significantly influence of fundamental propertys such as the resistance of transparent conductive film and light transmittance, but can make reverberation present irregular rainbow shape striped and dazzle (glare), and this will have adverse effect for product of paying attention to visual impression.Therefore, need to eliminate the solution of this rainbow shape striped and dazzle.
Summary of the invention
In view of this, the invention provides a kind of transparent conductive film, can effectively reduce the rainbow shape striped and the dazzle of transparent conductive film.
Transparent conductive film of the present invention comprises: a transparent conductive film, constituted by nano-oxide particles, and have periodically and on the whole parallel surface relief structure.
Structure of transparent conductive film of the present invention, this transparent conductive film is formed on the transparency carrier.
Structure of transparent conductive film of the present invention, this transparency carrier comprises glass.
Structure of transparent conductive film of the present invention, the cycle of this concaveconvex structure is 30 microns to 150 microns.
Structure of transparent conductive film of the present invention, the difference of height of this concaveconvex structure are 0.25 micron to 1 micron.
Structure of transparent conductive film of the present invention, this transparent conductive film sheet resistor is between 50ohm/square to 3000ohm/square.
Structure of transparent conductive film of the present invention, the visible light average penetration rate of this transparent conductive film is greater than 80%.
Structure of transparent conductive film of the present invention, this nano-oxide particles comprises: through mixing or unadulterated indium oxide (In
2O
3), tin oxide (SnO
2), zinc oxide (ZnO), cadmium oxide (CdO), cadmium oxide indium (CdIn
2O
4), magnesium oxide indium (MgIn
2O
4), zinc-gallium oxide (ZnGa
2O
4), cadmium oxide gallium (CdGa
2O
4), four zinc-tin oxide (Zn
2SnO
4), three zinc-tin oxide (ZnSnO
3), gallium oxide (Ga
2O
3), oxidation gallium indium (GaInO
3), four cadmium tin (Cd
2SnO
4), three cadmium tin (CdSnO
3), cadmium oxide antimony (Cd
2Sb
2O
7), cadmium oxide germanium (Cd
2GeO
4), indium oxide gallium magnesium (InGaMgO
4), indium oxide gallium zinc (InGaZnO
4), indium zinc oxide (Zn
2In
2O
5), silver oxide indium (AgInO
2), cupric oxide aluminium (CuAlO
2), cupric oxide gallium (CuGaO
2), strontium oxide strontia copper (SrCu
2O
2), or the combination of above-mentioned material.
For reaching above-mentioned purpose, the invention provides a kind of manufacture method of transparent conductive film, comprise the following steps: a plurality of nano-oxide particles and a solvent are deployed into the coating fluid of a suspension; One transparency carrier is immersed in this coating fluid; And, carry out a heat treatment step simultaneously with the pull-up from this coating fluid of this transparency carrier, and make the transparency carrier surface form a transparent conductive film, have periodically and on the whole parallel surface relief structure; This heat treatment is to heat with strip and the heater that is parallel to this transparency carrier surface.
The manufacture method of structure of transparent conductive film of the present invention, this transparency carrier be vertical pull-up from this coating fluid.
The manufacture method of structure of transparent conductive film of the present invention, this transparency carrier from this coating fluid with a fixed speed pull-up.
The manufacture method of structure of transparent conductive film of the present invention, this heater places the one or both sides of this transparency carrier in addition.
The manufacture method of structure of transparent conductive film of the present invention, this heater configuration direction is perpendicular to the direction of this transparency carrier pull-up.
The manufacture method of structure of transparent conductive film of the present invention, this heat treated temperature range is at 70 ℃ to 120 ℃.
The manufacture method of structure of transparent conductive film of the present invention, this transparency carrier comprises glass.
The manufacture method of structure of transparent conductive film of the present invention, this nano-oxide particles particle diameter is less than 100 nanometers.
The manufacture method of structure of transparent conductive film of the present invention, this nano-oxide comprise: through mixing or unadulterated indium oxide (In
2O
3), tin oxide (SnO
2), zinc oxide (ZnO), cadmium oxide (CdO), cadmium oxide indium (CdIn
2O
4), magnesium oxide indium (MgIn
2O
4), zinc-gallium oxide (ZnGa
2O
4), cadmium oxide gallium (CdGa
2O
4), four zinc-tin oxide (Zn
2SnO
4), three zinc-tin oxide (ZnSnO
3), gallium oxide (Ga
2O
3), oxidation gallium indium (GaInO
3), four cadmium tin (Cd
2SnO
4), three cadmium tin (CdSnO
3), cadmium oxide antimony (Cd
2Sb
2O
7), cadmium oxide germanium (Cd
2GeO
4), indium oxide gallium magnesium (InGaMgO
4), indium oxide gallium zinc (InGaZnO
4), indium zinc oxide (Zn
2In
2O
5), silver oxide indium (AgInO
2), cupric oxide aluminium (CuAlO
2), cupric oxide gallium (CuGaO
2), strontium oxide strontia copper (SrCu
2O
2), or the combination of above-mentioned material.
The manufacture method of structure of transparent conductive film of the present invention, the cycle of this concaveconvex structure is 30 microns to 150 microns.
The manufacture method of structure of transparent conductive film of the present invention, the difference of height of this concaveconvex structure are 0.25 micron to 1 micron.
The manufacture method of structure of transparent conductive film of the present invention, this transparent conductive film sheet resistor is between 50ohm/square to 3000ohm/square.
The manufacture method of structure of transparent conductive film of the present invention, the visible light average penetration rate of this transparent conductive film is greater than 80%.
Structure of transparent conductive film of the present invention and manufacture method thereof can be eliminated the mixed and disorderly striped that visible light reflects, and also can effectively reduce dazzle.
Description of drawings
Fig. 1 is the manufacturing installation schematic diagram of transparent conductive film in the preferred embodiment of the present invention;
Fig. 2 is a preferred embodiment transparent conductive film surface texture schematic diagram of the present invention;
Fig. 3 a shows with the formed transparent conductive film surface texture of observation by light microscope traditional wet chemical membrane method;
Fig. 3 b shows with observation by light microscope with the formed transparent conductive film surface texture of preferred embodiment heat treatment of the present invention;
Fig. 4 shows with scanning electron-microscopic observation through the formed transparent conductive film surface micro-structure of heat treatment of the present invention;
Fig. 5 a shows the formed transparent conductive film reverberation of traditional wet chemical membrane method image;
Fig. 5 b shows through the formed transparent conductive film reverberation of preferred embodiment heat treatment of the present invention image.
Embodiment
For above and other objects of the present invention, feature and advantage can be become apparent, a preferred embodiment cited below particularly, and cooperate appended diagram, be described in detail below:
The present invention mainly is the special thermal treatment step during by film forming, forms one-period property and on the whole parallel concave-convex surface rises and falls at substrate surface.Fig. 1 shows the manufacture method of transparent conductive film of the present invention, be raw material at first with the conductive nano oxide particle, mix with an organic solvent, be deployed into the coating fluid of suspension, place coating pan 103, as the film forming raw material, wherein nano-oxide particles comprises through mixing or unadulterated indium oxide (In
2O
3), tin oxide (SnO
2), zinc oxide (ZnO), cadmium oxide (CdO), cadmium oxide indium (CdIn
2O
4), magnesium oxide indium (MgIn
2O
4), zinc-gallium oxide (ZnGa
2O
4), cadmium oxide gallium (CdGa
2O
4), four zinc-tin oxide (Zn
2SnO
4), three zinc-tin oxide (ZnSnO
3), three gallium oxide (Ga
2O
3), oxidation gallium indium (GaInO
3), four cadmium tin (Cd
2SnO
4), three cadmium tin (CdSnO
3), cadmium oxide antimony (Cd
2Sb
2O
7), cadmium oxide germanium (Cd
2GeO
4), indium oxide gallium magnesium (InGaMgO
4), indium oxide gallium zinc (InGaZnO
4), indium zinc oxide (Zn
2In
2O
5), silver oxide indium (AgInO
2), cupric oxide aluminium (CuAlO
2), cupric oxide gallium (CuGaO
2), strontium oxide strontia copper (SrCu
2O
2), or the combination of above-mentioned material, wherein the size of conductive nano oxide particle is less than 100 nanometers, and is preferable between 15 nanometer to 45 nanometers.
With ganoid transparency carrier 101, glass for example, immersion is equipped with in the coating pan 103 of deployed suspension, carry out the infusion process in the traditional wet chemical membrane method, through about 10 seconds to 60 seconds dipping, with transparency carrier 101 with the fixed rate of about 5mm/sec to 15mm/sec from the liquid level pull-up, wherein be preferably vertical liquid level pull-up, the one or both sides that strip heater 102 places transparency carrier 101 respectively are set on liquid level simultaneously, and the orientation of adjustment heater, make it be parallel to the surface of transparency carrier 101 and perpendicular to the pull-up direction of transparency carrier 101, in the process of transparency carrier 101 pull-ups, heat, substrate surface temperature is between 70 degrees centigrade to 120 degrees centigrade during heating, form transparent conductive film after making coating fluid drying attached to transparency carrier 101 surfaces, then do heat treatment for the second time in heat-treatment furnace after, its sheet resistor is about between the 50ohm/square to 3000ohm/square, and the average penetration rate of visible light is more than 80%.
Fig. 2 shows through being formed on the structure of transparent conductive film 201 on the transparency carrier 101 after the heat treatment drying, its film surface presents one to have periodically and on the whole parallel concaveconvex structure, similar parallel mountain range shape, the period T of its concaveconvex structure is 30 μ m to 150 μ m, and the difference of height h of its concaveconvex structure is about 0.25 μ m to 1 μ m.
Fig. 3 a shows with traditional wet chemical membrane method, equally with after the infusion process film forming at the formed transparent conductive film of natural drying at room temperature film forming, utilize the surface micro-structure of observation by light microscope, can find that by figure the formed transparent conductive film of natural drying at room temperature film forming does not form any special structure at film surface.Fig. 3 b shows that the film surface structure under light microscope can be found by figure through the formed transparent conductive film of heat treatment process of the present invention, the surface after the film forming present folk prescription to and on the whole parallel striated structure.
Fig. 4 shows that its film surface presents periodically and on the whole parallel list structure with the formed transparent conductive film surface micro-structure of scanning electron-microscopic observation process heat treatment of the present invention.
Fig. 5 a shows that tradition becomes the formed transparent conductive film reverberation of embrane method image without heat treated wet chemistry, can be learnt by figure, presents irregular rainbow shape striped with the formed transparent conductive film reverberation of traditional wet chemical membrane method.Fig. 5 b demonstration utilizes the formed transparent conductive film reverberation of heat treatment of the present invention image, form periodic surface relief structure after the heat treatment and effectively eliminated irregular rainbow shape striped really, and because concavo-convex geometry causes coarse surface, make the light reflection direction more inconsistent, therefore the reverberation image is comparatively fuzzy, has the effect that reduces dazzle.
The above only is preferred embodiment of the present invention; so it is not in order to limit scope of the present invention; any personnel that are familiar with this technology; without departing from the spirit and scope of the present invention; can do further improvement and variation on this basis, so the scope that claims were defined that protection scope of the present invention is worked as with the application is as the criterion.
Being simply described as follows of symbol in the accompanying drawing:
Transparency carrier: 101
Heater: 102
Coating pan: 103
Transparent conductive film: 201
Difference of height: h
Cycle: T
Claims (21)
1, a kind of structure of transparent conductive film is characterized in that described structure of transparent conductive film comprises:
One transparent conductive film is made of nano-oxide particles, has periodically and parallel surface relief structure.
2, structure of transparent conductive film according to claim 1 is characterized in that: this transparent conductive film is formed on the transparency carrier.
3, structure of transparent conductive film according to claim 2 is characterized in that: this transparency carrier comprises glass.
4, structure of transparent conductive film according to claim 1 is characterized in that: the cycle of this concaveconvex structure is 30 microns to 150 microns.
5, structure of transparent conductive film according to claim 1 is characterized in that: the difference of height of this concaveconvex structure is 0.25 micron to 1 micron.
6, structure of transparent conductive film according to claim 1 is characterized in that: this transparent conductive film sheet resistor is between 50ohm/square to 3000ohm/square.
7, structure of transparent conductive film according to claim 1 is characterized in that: the visible light average penetration rate of this transparent conductive film is greater than 80%.
8, structure of transparent conductive film according to claim 1, it is characterized in that: this nano-oxide particles comprises: through mixing or unadulterated indium oxide, tin oxide, zinc oxide, cadmium oxide, cadmium oxide indium, magnesium oxide indium, zinc-gallium oxide, cadmium oxide gallium, four zinc-tin oxide, three zinc-tin oxide, gallium oxide, oxidation gallium indium, four cadmium tin, three cadmium tin, cadmium oxide antimony, cadmium oxide germanium, indium oxide gallium magnesium, indium oxide gallium zinc, indium zinc oxide, silver oxide indium, cupric oxide aluminium, cupric oxide gallium, strontium oxide strontia copper, or the combination of above-mentioned material.
9, a kind of manufacture method of structure of transparent conductive film is characterized in that the manufacture method of described structure of transparent conductive film comprises the following steps:
With a plurality of nano-oxide particles and a solvent, be deployed into the coating fluid of a suspension;
One transparency carrier is immersed in this coating fluid; And
With the pull-up from this coating fluid of this transparency carrier, carry out a heat treatment simultaneously, make this transparency carrier surface form a transparent conductive film, have periodically and parallel surface relief structure;
This heat treatment is to heat with strip and the heater that is parallel to this transparency carrier surface.
10, the manufacture method of structure of transparent conductive film according to claim 9 is characterized in that: this transparency carrier is vertical pull-up from this coating fluid.
11, the manufacture method of structure of transparent conductive film according to claim 9 is characterized in that: this transparency carrier from this coating fluid with a fixed speed pull-up.
12, the manufacture method of structure of transparent conductive film according to claim 9 is characterized in that: this heater places the one or both sides of this transparency carrier in addition.
13, the manufacture method of structure of transparent conductive film according to claim 9 is characterized in that: this heater configuration direction is perpendicular to the direction of this transparency carrier pull-up.
14, the manufacture method of structure of transparent conductive film according to claim 9 is characterized in that: this heat treated temperature range is at 70 ℃ to 120 ℃.
15, the manufacture method of structure of transparent conductive film according to claim 9 is characterized in that: this transparency carrier comprises glass.
16, the manufacture method of structure of transparent conductive film according to claim 9 is characterized in that: this nano-oxide particles particle diameter is less than 100 nanometers.
17, the manufacture method of structure of transparent conductive film according to claim 9, it is characterized in that: this nano-oxide comprises: through mixing or unadulterated indium oxide, tin oxide, zinc oxide, cadmium oxide, cadmium oxide indium, magnesium oxide indium, zinc-gallium oxide, cadmium oxide gallium, four zinc-tin oxide, three zinc-tin oxide, gallium oxide, oxidation gallium indium, four cadmium tin, three cadmium tin, cadmium oxide antimony, cadmium oxide germanium, indium oxide gallium magnesium, indium oxide gallium zinc, indium zinc oxide, silver oxide indium, cupric oxide aluminium, cupric oxide gallium, strontium oxide strontia copper, or the combination of above-mentioned material.
18, the manufacture method of structure of transparent conductive film according to claim 9 is characterized in that: the cycle of this concaveconvex structure is 30 microns to 150 microns.
19, the manufacture method of structure of transparent conductive film according to claim 9 is characterized in that: the difference of height of this concaveconvex structure is 0.25 micron to 1 micron.
20, the manufacture method of structure of transparent conductive film according to claim 9 is characterized in that: this transparent conductive film sheet resistor is between 50ohm/square to 3000ohm/square.
21, the manufacture method of structure of transparent conductive film according to claim 9 is characterized in that: the visible light average penetration rate of this transparent conductive film is greater than 80%.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2005100906271A CN100561605C (en) | 2005-08-18 | 2005-08-18 | Structure of transparent conductive film and manufacture method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2005100906271A CN100561605C (en) | 2005-08-18 | 2005-08-18 | Structure of transparent conductive film and manufacture method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1917097A CN1917097A (en) | 2007-02-21 |
| CN100561605C true CN100561605C (en) | 2009-11-18 |
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| CNB2005100906271A Active CN100561605C (en) | 2005-08-18 | 2005-08-18 | Structure of transparent conductive film and manufacture method thereof |
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Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2011187640A (en) * | 2010-03-08 | 2011-09-22 | Sumitomo Heavy Ind Ltd | Deposition substrate, method for manufacturing the deposition substrate, and deposition device |
| CN102490401A (en) * | 2011-10-29 | 2012-06-13 | 合肥乐凯科技产业有限公司 | Hardened film for in-mold decoration and preparation method of hardened film |
| CN102501421B (en) * | 2011-10-29 | 2015-04-01 | 合肥乐凯科技产业有限公司 | Frosted hardened film for in-mold decoration |
| CN110079783A (en) | 2014-03-18 | 2019-08-02 | 3D-奥克赛茨公司 | Label apparatus, its purposes and the packaging for label apparatus |
| CN108962436A (en) * | 2018-07-06 | 2018-12-07 | 无锡众创未来科技应用有限公司 | The method for manufacturing transparent conductive film |
| CN110964401A (en) * | 2018-09-29 | 2020-04-07 | 宁波方太厨具有限公司 | Conductive gel, preparation method thereof and preparation method of HEPA filter screen |
| CN111129207B (en) * | 2018-11-01 | 2022-02-08 | 杭州朗旭新材料科技有限公司 | Cadmium stannate transparent conductive film, cadmium telluride cell preparation method and thin film solar cell |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6533965B1 (en) * | 1999-11-26 | 2003-03-18 | Alps Electric Co., Ltd | Transparent electrically conductive oxide film for an electronic apparatus and related method |
-
2005
- 2005-08-18 CN CNB2005100906271A patent/CN100561605C/en active Active
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6533965B1 (en) * | 1999-11-26 | 2003-03-18 | Alps Electric Co., Ltd | Transparent electrically conductive oxide film for an electronic apparatus and related method |
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| CN1917097A (en) | 2007-02-21 |
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