CN108962436A - The method for manufacturing transparent conductive film - Google Patents
The method for manufacturing transparent conductive film Download PDFInfo
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- CN108962436A CN108962436A CN201810736442.0A CN201810736442A CN108962436A CN 108962436 A CN108962436 A CN 108962436A CN 201810736442 A CN201810736442 A CN 201810736442A CN 108962436 A CN108962436 A CN 108962436A
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- conductive film
- transparent conductive
- coating
- transparent
- film
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B5/00—Non-insulated conductors or conductive bodies characterised by their form
- H01B5/14—Non-insulated conductors or conductive bodies characterised by their form comprising conductive layers or films on insulating-supports
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
- H01B1/06—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of other non-metallic substances
- H01B1/08—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of other non-metallic substances oxides
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B13/00—Apparatus or processes specially adapted for manufacturing conductors or cables
Abstract
The present invention provides a kind of method for manufacturing transparent conductive film, comprising: Step 1: surface is coated with, nano-powder colloidal sol is coated on the transparent material surface and is formed uniform and thin coating layer by the transparent material for selecting cleaning to complete in a manner of immersion plating or rotary coating；Step 2: post-processing, the transparent conductive film element that coating is completed, it reaches predetermined resistance value so that the transparent conductive film that coating is completed is converted to uniform, fine and close and adsorbs good transparent conductive film with the baking of preset temperature and resistance value otherness is small.It can produce the conductive film of resistance value 1 to 3000ohm/square；The film has the characteristics such as uniform, fine and close, absorption is good, resistance value variability is low.And the utilization rate of the method material of the manufacture transparent conductive film is high, sheet resistance variability is low, be not required to vacuumize and film-forming apparatus cost is relatively low.
Description
Technical field
The present invention relates to conductive film manufacturing fields, more particularly to are coated with using Nano sol, and combine heat treatment mode
The manufacturing method of transparent conductive film is formed in substrate.
Background technique
The photovoltaics such as flat-panel screens, light emitting diode, touch panel all need transparent conductive film, most common
Transparent conductive film is indium-zinc oxide and indium tin oxide class transparent conductive film；Transparent conductive film is in volume production at present, greatly
All formed a film using dry-type and physicals methods such as magnetic control sputtering plating or vacuum evaporations.The main problem of physical method film forming is film-forming apparatus
And target is all fairly expensive, and the utilization rate of filmogen is extremely low, therefore manufacturing cost is high.
The method for being conventionally formed transparent conductive film still has therefore how shortcomings design a kind of shape of innovation
At the method for transparent conductive film, can effectively solve problem, become the important goal of numerous dealers.
Inventor designs a kind of manufacture electrically conducting transparent of the present invention according to many years practical experience and research experiment, finally exploitation
The method of film, can effectively solve foregoing problems.
Summary of the invention
The utilization rate that the present invention provides a kind of material is high, sheet resistance variability is low, is not required to vacuumize and film-forming apparatus
It is lower-cost manufacture transparent conductive film method, using this method prepare transparent conductive film, resistance value be 10 to
1000ohm/square, the film is uniformly, fine and close, absorption is good, resistance value otherness is small.
The present invention provides a kind of method for manufacturing transparent conductive film comprising: Step 1: surface is coated with, select cleaning
Nano-powder colloidal sol is coated on the transparent material surface shape in a manner of immersion plating or rotary coating by the transparent material of completion
At uniform and thin coating layer；Step 2: post-processing, the transparent conductive film element that coating is completed, with the baking of preset temperature
It is roasting, so that the transparent conductive film that coating is completed is converted to uniform, fine and close and adsorbs good transparent conductive film, reach
Predetermined resistance value and resistance value otherness is small.Preferably, the method generate transparent conductive film resistance value between 10 to
Between 1000 ohm-sqs (ohm/square).
Preferably, the transparent material used in the step 1 includes plastic material or glass material.
Preferably, wherein nano-powder colloidal sol used in the coating of the translucent material surface is indium oxide (In2O3), aoxidizes
Tin (SnO2), zinc oxide (ZnO), four zinc-tin oxides (Zn2SnO4), three zinc-tin oxides (ZnSnO3), indium zinc oxide
(Zn2In2O5), tin indium oxide (In2O3SnO2), antimony tin (Sb2O3SnO2), zinc oxide aluminum (ZnOAl2O3) or
Tin oxide fluorine (SnO2F) nano-powder colloidal sol, nano-powder particle diameter are distributed as 1~100nm, and solid content is 0.1~
10.0%, pH are 4.0~9.0.
Preferably, wherein nano-powder colloidal sol used in the coating of the translucent material surface is indium oxide (In2O3), aoxidizes
Zinc (ZnO) or aluminium oxide (Al2O3) nano-powder colloidal sol.
Preferably, the plastic material used in the step 1 includes acryl, poly- carbonic acid or polystyrene.
Preferably, it wherein the mode for being coated with the nano-powder colloidal sol is carried out in a manner of immersion plating or rotary coating, applies
The temperature controlling range of the nano-powder sol solution is 5~80 DEG C when cloth, and the immersion time out of immersion plating is 5 seconds to 10 points
Clock, after immersion draw high speed be 10~400 mm/mins (mm/min), and the revolving speed of rotary coating be 600~3,00rpm,
Time is 30 seconds~5 minutes, is dried after the completion of the coating of surface, and the temperature of drying is 60~200 DEG C, and drying time is 10
~60 minutes.
Preferably, described when using glass material as transparent material described in step 1 in step 2 post-processing
The calcination temperature range of glass material is 200 DEG C~400 DEG C, and calcination time is 30 minutes~4 hours, and passes through above-mentioned processing
Transparent conductive film, sheet resistance is between 10~1000ohm/square, it is seen that the average penetration rate of light is 80% or more.
Preferably, in step 2 post-processing, when using plastic material as transparent material described in step 1, step
In rapid two post processor, for transparent plastic material with microwave treatment, used microwave frequency is 2.45GHz, power is 100~
1500W, the time is 5 seconds to 30 minutes, and the transparent conductive film Jing Guo above-mentioned processing, and sheet resistance is about in 10~1000ohm/
Between square, it is seen that the average penetration rate of light is 80% or more.
Preferably, the method for the manufacture transparent conductive film includes step 3, and the electrically conducting transparent that step 2 is obtained is thin
Film is implanted into using metal plasma-based ion source, under the conditions of 10~80KeV of acceleration voltage, 1~10 minute time, by aluminium, fluorine or gallium
Element value enters film, and it is 1~15% that the value relative to film quality, which enters amount, and the resistance of gained transparent conductive film is 0.3~
10ohm/square。
A kind of method manufacturing transparent conductive film provided by the invention will be received using nano-powder colloidal sol coating technique
Rice flour body sol particles are coated on transparent material in a manner of immersion plating or rotary coating, and cooperate post-processing, make nanoparticle
Form transparent conductive film；Using plating conditions difference, the conductive film of resistance value 1 to 3000ohm/square is generated；This is thin
Film has the characteristics such as uniform, fine and close, absorption is good, resistance value variability is low.In summary it is found that the present invention is directly with nanometer
Conductive oxide colloidal sol (dispersing agent is free of in colloidal sol), which carries out plated film, needs the red of special designing due to having lacked the interference of dispersing agent
Outside line (IR) drying, can form conductive film；Therefore, the present invention include be not required to vacuumize, cost is relatively low for film-forming apparatus, can
It is formed a film with the mode of immersion plating or rotary coating, the characteristics such as the utilization rate height of material and sheet resistance variability are low, and such straight
The method that conductive film is formed with nano-powder colloidal sol coating process is connect, then people there is no to propose so far.
Specific embodiment
The embodiments described below are only a part of the embodiment of the present invention, instead of all the embodiments.Based on this
Embodiment in invention, every other reality obtained by those of ordinary skill in the art without making creative efforts
Example is applied, shall fall within the protection scope of the present invention.
Embodiment one:
Glass that will be clean immerses solid content 3%, quiet in the colloidal sol of three zinc-tin oxides (ZnSnO3) of 30~70nm of partial size
After setting 60 seconds, speed plated film is drawn high with 100 mm/mins (mm/min)；It was dried after plated film with 150 DEG C/10 minutes.Drying
The sheet glass of completion was sintered with 280 DEG C/60 minutes, and sintered electro-conductive glass, sheet resistance is about in 50~100ohm/
Between square, it is seen that the average penetration rate of light is 85~90%.
Embodiment two:
Glass that will be clean immerses solid content 3%, in the colloidal sol of the stannic oxide (SnO2) of 10~40nm of partial size, stands 30
After second, speed plated film is drawn high with 100 mm/mins (mm/min)；It was dried after plated film with 150 DEG C/10 minutes.Drying is completed
Sheet glass be sintered with 280 DEG C/60 minutes, with metal plasma-based ion source implanted prosthetics after sintering, in acceleration voltage
20KeV is implanted into fluorine element under conditions of 3 minutes time, is worth into amount 2% (relative to tin dioxide thin film quality), institute's output
Electro-conductive glass window, sheet resistance is between 0.5~3ohm/square, it is seen that the average penetration rate of light is 80~85%.
Embodiment three:
Glass that will be clean immerses solid content 3%, in the colloidal sol of the stannic oxide (SnO2) of 10~40nm of partial size, stands 30
After second, speed plated film is drawn high with 100 mm/mins (mm/min)；It was dried after plated film with 150 DEG C/10 minutes.Drying is completed
Sheet glass immerse solid content 0.5% again, in the colloidal sol of the zinc oxide (ZnO) of 30~70nm of partial size, after standing 60 seconds, with 50 millis
M/min (mm/min) draws high speed plated film；It was dried after plated film with 150 DEG C/10 minutes.Dry complete sheet glass with
It is sintered within 300 DEG C/60 minutes, sintered electro-conductive glass, sheet resistance is about between 10~30ohm/square, it is seen that light
Average penetration rate is 90~93.
Embodiment one, two, third is that directly carry out plated film with conductive nano oxide sol (being free of dispersing agent in colloidal sol), by
In the interference for having lacked dispersing agent, needs the infrared ray (IR) of special designing to dry, conductive film can be formed；The film has equal
Even, the fine and close, characteristics such as absorption is good, resistance value otherness is small.And utilization rate height and sheet resistance variability with material
Low characteristic, and such method for directly forming conductive film with nano-powder colloidal sol coating process, then there is no people to propose so far.
Above disclosed is only a preferred embodiment of the present invention, cannot limit the power of the present invention with this certainly
Sharp range, therefore according to equivalent variations made by scope of the present invention patent, it is still within the scope of the present invention.
Claims (10)
1. a kind of method for manufacturing transparent conductive film comprising:
Step 1: surface is coated with, the transparent material for selecting cleaning to complete, in a manner of immersion plating or rotary coating, by nano-powder
Colloidal sol is coated on the transparent material surface and forms uniform and thin coating layer；
Step 2: post-processing, the transparent conductive film element that coating is completed, with the baking of preset temperature, so that coating is completed
Transparent conductive film be converted to uniform, fine and close and adsorb good transparent conductive film, reach predetermined resistance value and electricity
Resistance value otherness is small.
2. the method for manufacture transparent conductive film as described in claim 1, which is characterized in that transparent the leading of the method generation
Conductive film resistance value is between 10 to 1000 ohm-sqs (ohm/square).
3. the method for manufacture transparent conductive film as described in claim 1, which is characterized in that is used in the step 1 is saturating
Bright material includes plastic material or glass material.
4. the method for manufacture transparent conductive film as claimed in claim 3, which is characterized in that the modeling used in the step 1
Glue material includes acryl, poly- carbonic acid or polystyrene.
5. the method for manufacture transparent conductive film as claimed in claim 3, which is characterized in that in the post-processing of its step 2, adopt
When using glass material as transparent material described in step 1, the calcination temperature range of the glass material is 200 DEG C~
400 DEG C, calcination time is 30 minutes~4 hours, and the transparent conductive film Jing Guo above-mentioned processing, sheet resistance 10~
Between 1000ohm/square, it is seen that the average penetration rate of light is 80% or more.
6. the method for manufacture transparent conductive film as claimed in claim 3, which is characterized in that in the post-processing of its step 2, adopt
When using plastic material as transparent material described in step 1, in step 2 post processor, transparent plastic material is with micro-
Wave processing, used microwave frequency are 2.45GHz, and power is 100~1500W, and the time is 5 seconds to 30 minutes, and by upper
The transparent conductive film of processing is stated, sheet resistance is about between 10~1000ohm/square, it is seen that the average penetration rate of light exists
80% or more.
7. the method for manufacture transparent conductive film as described in claim 1, which is characterized in that wherein the translucent material surface applies
Nano-powder colloidal sol used in cloth is indium oxide (In2O3), tin oxide (SnO2), zinc oxide (ZnO), four zinc-tin oxides
(Zn2SnO4), three zinc-tin oxides (ZnSnO3), indium zinc oxide (Zn2In2O5), tin indium oxide (In2O3SnO2), antimony oxide
Tin (Sb2O3SnO2), zinc oxide aluminum (ZnOAl2O3) or tin oxide fluorine (SnO2F) nano-powder colloidal sol, nano powder
Body particle diameter is distributed as 1~100nm, and solid content is that 0.1~10.0%, pH is 4.0~9.0.
8. the method for manufacture transparent conductive film as described in claim 1, which is characterized in that wherein the translucent material surface applies
Nano-powder colloidal sol used in cloth is indium oxide (In2O3), zinc oxide (ZnO) or aluminium oxide (Al2O3) nano-powder colloidal sol.
9. the method for manufacture transparent conductive film as claimed in claim 7 or 8, which is characterized in that be wherein coated with the nanometer
The mode of powder colloidal sol is carried out in a manner of immersion plating or rotary coating, the temperature control of nano-powder sol solution when coating
Range is 5~80 DEG C, and the immersion time out of immersion plating is 5 seconds to 10 minutes, after immersion draw high speed be 10~400 millimeters/
Minute (mm/min), and the revolving speed of rotary coating is 600~3,00rpm, the time is 30 seconds~5 minutes, after the completion of the coating of surface
It is dried, the temperature of drying is 60~200 DEG C, and drying time is 10~60 minutes.
10. the method for manufacture transparent conductive film as described in claim 1, which is characterized in that the manufacture electrically conducting transparent is thin
The method of film includes step 3, and the transparent conductive film that step 2 is obtained is implanted into using metal plasma-based ion source, is accelerating electricity
10~80KeV is pressed, under the conditions of 1~10 minute time, aluminium, fluorine or gallium element value are entered into film, and the value relative to film quality
Entering amount is 1~15%, and the resistance of gained transparent conductive film is 0.3~10ohm/square.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201810736442.0A CN108962436A (en) | 2018-07-06 | 2018-07-06 | The method for manufacturing transparent conductive film |
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| CN201810736442.0A CN108962436A (en) | 2018-07-06 | 2018-07-06 | The method for manufacturing transparent conductive film |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN109830586A (en) * | 2019-02-19 | 2019-05-31 | 芜湖德豪润达光电科技有限公司 | The preparation method and light emitting diode of transparency conducting layer |
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