CN100555664C - Power type segregator metal oxide semiconductor fieldistor - Google Patents
Power type segregator metal oxide semiconductor fieldistor Download PDFInfo
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- CN100555664C CN100555664C CN 200710011533 CN200710011533A CN100555664C CN 100555664 C CN100555664 C CN 100555664C CN 200710011533 CN200710011533 CN 200710011533 CN 200710011533 A CN200710011533 A CN 200710011533A CN 100555664 C CN100555664 C CN 100555664C
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Abstract
Power type segregator metal oxide semiconductor fieldistor by the snowslide that has barrier layer anti-can the unit and compound be trapped among snowslide anti-can be above the unit borderline region and be filled in the borderline region middle part and top and with anti-metal material contact window (5) formation that can cell conduction of snowslide, snowslide is anti-to be compounded with substrate below the unit, borderline region is made up of the composite semiconductor material layer (2) that is provided with between separator (1-1) and the oxide-diffused layer (22), and is adjacent with region of activation (4) below the oxide-diffused layer outer end; Dock with N+ passage outer end the region of activation; Composite semiconductor material layer outer end and oxide-diffused layer outer end are inwardly wrong, and add coated separator (1-2) in the outer end that composite semiconductor material layer and oxide-diffused layer interlace.Oxide-diffused layer and the inside indentation in composite semiconductor material layer outer end and add coated separator like this in their outer end, expose discharge with regard to preventing oxide-diffused layer and composite semiconductor material layer outer end effectively, just can prevent discharge, thereby improve the high-voltage resistance capability of device.
Description
Technical field
The present invention relates to semiconductor technology, specifically a kind of power type segregator metal oxide semiconductor fieldistor (MOSFET).
Background technology
In the prior art, power type segregator metal oxide semiconductor fieldistor MOSFET by the snowslide that has barrier layer anti-can the unit and compound be trapped among snowslide anti-can be above the unit borderline region and be filled in the borderline region middle part and top and with anti-metal material contact window (5) formation that can cell conduction of snowslide, snowslide is anti-to be compounded with substrate below the unit, and borderline region is made up of the composite semiconductor material layer (2) that is provided with between separator (1-1) and the oxide-diffused layer (22).Borderline region structure (referring to Fig. 1-1), be generally: establish composite semiconductor material layer 2 (POLY) between separator 1-1 (adopting boron-phosphorosilicate glass (BPSG)) and the oxide-diffused layer 3 (FOX), composite semiconductor material layer (2) is inner to be evened up with oxide-diffused layer the inner, and the right-hand member of composite semiconductor material layer outer end and separator (1-1) and oxide-diffused layer (22) is evened up.Weak point is: existing structure does not have great variation to the lifting of breakdown voltage, even change epitaxial wafer (EPI) material, can only reach 60V yet.If be used to be higher than the voltage of 100V, just produce point discharge, breakdown power type discrete device MOSFET easily in composite semiconductor material layer (2) outer end.In addition, the structure of MOSFET device runs into special occasions sometimes on using, and for example also must flow through specific currents contrary the connecing under the situation of high voltage, and Avalanche this moment (the anti-energy of snowslide) just needs to consider.The MOSFET passage is a vertical-type, so the many barrier layers (Heavy Body) of the width between two contiguous N+ passages.The barrier layer width can influence the ability of the anti-energy of snowslide, and the wide more then ability of width is strong more.One side width of barrier layer has only 2.5um in the anti-energy of the snowslide at present cellular construction, and identical with the N+ channel width, integral body is square, and snowslide is anti-ability to be 300mw.With reference to figure 2-1, existing power-type discrete device MOSFET deficiency is to reckon without the ability of the required anti-energy of snowslide of practical application, simply pursue small size, low-cost and cause in the application and burn easily.The anti-energy of the snowslide ability of the borderline region breakdown voltage of power-type discrete device MOSFET lifting effect and the anti-energy of snowslide unit is not ideal enough at present in a word.
Summary of the invention
It is low that the present invention will solve existing power type segregator metal oxide semiconductor fieldistor MOSFET borderline region breakdown voltage exactly, make the lower technical problem of entire device proof voltage ability, provide a kind of and can promote breakdown voltage, improve the power type segregator metal oxide semiconductor fieldistor MOSFET of the anti-high voltage and high current that can ability of snowslide simultaneously.
In order to solve existing above-mentioned technical problem, the technical scheme that the power type segregator metal oxide semiconductor fieldistor MOSFET of high voltage and high current of the present invention (referring to accompanying drawing 2-1) is adopted is to comprise: by the snowslide that has barrier layer anti-can the unit and compound be trapped among snowslide anti-can be above the unit borderline region and be filled in the borderline region middle part and top and with anti-metal material contact window (5) formation that can cell conduction of snowslide, snowslide is anti-to be compounded with substrate below the unit, borderline region is made up of the composite semiconductor material layer (2) that is provided with between separator (1-1) and the oxide-diffused layer (22), it is characterized in that: adjacent with region of activation (4) below oxide-diffused layer (22) outer end; Region of activation (4) (increasing the effect of region of activation: increase the electron stream passband) and N
+Dock the passage outer end, thereby increase the bearing capacity of high electric current; Composite semiconductor material layer (2) outer end and oxide-diffused layer outer end are inwardly wrong, and add coated separator (1-2) in the outer end that composite semiconductor material layer (2) and oxide-diffused layer interlace.Oxide-diffused layer (22) and the inside indentation in composite semiconductor material layer (2) outer end and add coated separator (1-2) in their outer end like this, expose discharge with regard to preventing oxide-diffused layer (22) and composite semiconductor material layer (2) outer end effectively, particularly also can prevent point discharge, this just effectively can improve the high-voltage resistance capability of device.Particularly also on oxide-diffused layer (22) horizontal direction, add end separator (1-3) outside the coated separator, just more can prevent discharge, thereby improve the high-voltage resistance capability of device.Generally also improve the ability of electric current when improving voltage, can widen metal material contact window (5) and N
+Channel width.If all widen at both direction in length and breadth, then at both direction in length and breadth, inwardly contract and add coated separator (1-2) in composite semiconductor material layer (2) outer end and oxide-diffused layer outer end.If only all widen in a wherein direction in length and breadth, then inwardly contracing in composite semiconductor material layer (2) outer end of this direction and oxide-diffused layer outer end adds coated separator (1-2).Certainly preferably also on these directions the outer end add end separator (1-3).Power type segregator metal oxide semiconductor fieldistor of the present invention, preferably composite semiconductor material layer (2) outer end is shorter than oxide-diffused layer outer end, form the ladder state, add coated separator (1-2) in their ladder outer end again, more can effectively prevent point discharge, improve voltage endurance capability.
Can ability in order to have improved further that snowslide is anti-, power type segregator metal oxide semiconductor fieldistor of the present invention, described snowslide is anti-can cellular construction in barrier layer integral body be rectangle, its long limit level is to being arranged on N
+Between the passage, the length on one side that barrier layer is long is greater than the N+ channel width.Preferably adjacent with oxide-diffused layer (22) one end region of activation (4) is positioned at the below of end separator (1-3) and coated separator (1-2).Described contact window (5) is positioned on the path of electron stream, with the same material of source electrode.
Compared with the prior art the present invention has following beneficial effect:
1. improved the anti-energy of snowslide ability.The present invention has strengthened two N
+Between the width of barrier layer, make volume concentration range P
+The zone strengthen, thereby reduced the resistance of semiconductor and metal level, reach the purpose that increases the anti-energy of snowslide intensity.
2. lifting breakdown voltage.Because the present invention improves borderline region, adds end separator, coated separator, and offers contact window, constitutes a kind of enhanced type borderline region, it can raise breakdown voltage and reach 200V.
3. cost is low.Improved, the enhanced type border is identical with the manufacturing materials of device own, need not change extra material, thereby saved cost of manufacture effectively.
Description of drawings
Represented prior art and power type segregator metal oxide semiconductor fieldistor MOSFET structural representation of the present invention in the accompanying drawing, wherein:
Fig. 1-1 is MOSFET master's sectional structure schematic diagram in the prior art;
Fig. 1-2 is the vertical view of MOSFET in the prior art;
Fig. 2-1 is MOSFET master's sectional structure schematic diagram of the present invention;
Fig. 2-2 is the vertical view of MOSFET of the present invention;
Embodiment
The invention will be further described below in conjunction with the embodiment of accompanying drawing.
In the prior art, to the borderline region of MOSFET device this partly design can (referring to Fig. 1-1,1-2), some uses different materials, and some uses different structure in different ways.
The present invention has done further improvement (referring to Fig. 2-1,2-2), the technical scheme that adopted of the power type segregator metal oxide semiconductor fieldistor MOSFET of this high voltage and high current of the present invention is: by the snowslide that has barrier layer (24) anti-can the unit and compound be trapped among snowslide anti-can be above the unit borderline region and be filled in the borderline region middle part and top and with anti-metal material contact window (5) formation that can cell conduction of snowslide.Snowslide is anti-to be comprised the unit: 23 are N
+Passage; 24 is barrier layer (HeavyBody); 25 is basic P layer (Body); 26 is epitaxial wafer (EPI); 27 is substrate (N+substrae).Snowslide just is anti-to be compounded with substrate below the unit.Borderline region is formed by separator (1-1) and as the composite semiconductor material layer (2) that is provided with between the oxide-diffused layer (22) of grid.Adjacent with region of activation (4) below oxide-diffused layer (22) outer end, with the corresponding reduction of conduction impedance of passage after increasing the electron stream passband, problem of temperature rise is improved, and improves the current flowing ability; Region of activation (4) and N
+The butt joint of passage (23) outer end; Composite semiconductor material layer (2) outer end and oxide-diffused layer (22) outer end are inwardly wrong, and add coated separator (1-2) in the outer end that composite semiconductor material layer (2) and oxide-diffused layer (22) interlace.Oxide-diffused layer (22) and the inside indentation in composite semiconductor material layer (2) outer end like this, composite semiconductor material layer (2) outer end is shorter than oxide-diffused layer (22) outer end, form the ladder state, add coated separator (1-2) in their ladder outer end again, so just more can effectively prevent point discharge, improve voltage endurance capability.Add coated separator (1-2) in their outer end, also on oxide-diffused layer (22) horizontal direction, add end separator (1-3) outside the coated separator, expose discharge with regard to preventing oxide-diffused layer (22) and composite semiconductor material layer (2) outer end effectively, particularly also can prevent point discharge, thereby just effectively can improve the high-voltage resistance capability of device.The advantage of this technical solution of the present invention mode has:
1) electron transfer rate is accelerated.Because the present invention is on the composite semiconductor material layer basis that adds above the zone, region of activation, add end separator (1-3), coated separator, at coated separator (1-2), end separator (1-3), contact window (5) is set above the separator (1-1), and the contact window (5) of offering big aperture between the separator (1-1), electron transfer rate is accelerated, made its electronic energy fast transferring to grid.
2) can promote breakdown voltage.The enhanced type borderline region of improvement structure of the present invention can raise breakdown voltage and reach 200V.Only need to change epitaxial wafer, and need can not be suitable for interior at 200V in redesign.
Device of the present invention is high-power type MOSFET, and its size of components is bigger, and the composite semiconductor material layer that can arrive grid rapidly and added for the electronics speed that can make the assembly periphery can overcome the slower problem of power device mobility (Mobility).Please refer to following principle:
Electron mobility μ n=q τ c/mn*;
Electrokinetic migration rate μ p=q τ c/mp*;
Wherein: q represents the electron charge number, and average time is collided in τ c representative, and mn* represents electron effective mass, and mp* represents electronic effective mass.
3) cost is low.The material that is adopted in the preparation of the present invention is identical with the manufacturing materials of device own, need not change extra new material, so cost is lower.
A kind of power type segregator metal oxide semiconductor fieldistor of the present invention, by the snowslide that has barrier layer (24) anti-can the unit and compound be trapped among snowslide anti-can be above the unit borderline region and be filled in the borderline region middle part and top and with anti-metal material contact window (5) formation that can cell conduction of snowslide.The improvement of the anti-energy of the snowslide of this power type segregator metal oxide semiconductor fieldistor of the present invention cellular construction is shown in Fig. 2-1,2-2, and wherein the barrier layer integral body of the anti-energy of snowslide unit is rectangle, and the length on long one side is greater than N
+Passage (23) width, in other words, under the constant situation of vertical edges width, its long limit level of left and right horizontal hem width degree lengthening (as: be enlarged to 3.5um, and foursquare four limits being 2.5um in the prior art) is to being arranged on N
+Between the passage; In order to reduce the intensity of resistance, the anti-energy of increase snowslide.Particularly just more can prevent discharge, thereby improve the high-voltage resistance capability of device.Also improve the ability of electric current when improving voltage, can about widen metal material contact window (5) and N
+Channel width.The outer end adds end separator (1-3) on this left and right directions.Can ability in order to have improved further that snowslide is anti-, power type segregator metal oxide semiconductor fieldistor of the present invention, described snowslide is anti-can cellular construction in barrier layer integral body be rectangle, its long limit level is to being arranged on N
+Between the passage, the length on one side that barrier layer is long is greater than N
+Channel width.Preferably adjacent with oxide-diffused layer (22) one end region of activation (4) is positioned at the below of end separator (1-3) and coated separator (1-2).Described contact window (5) is positioned on the path of electron stream, with the same material of source electrode.
Among Fig. 2-1: 2 is composite semiconductor material layer (POLY); 22 is grid oxic horizon; 23 is N
+Passage; 24 is barrier layer (Heavy Body); 25 is basic P layer (Body); 26 is epitaxial wafer (EPI); 27 is substrate (N+substrae).
By Fig. 2-1 and Fig. 2-2 two N as can be known
+Between width broaden and then represent volume concentration P
+The zone strengthen, then resistance can reduce, and can allow the electric current of process then to increase.
A low-resistance interface can provide the conducting of doing both direction between metal and the semiconductor.Because the electric group of ratio that can be defined as voltage and electric current, Yin Wendu and the electric current increase means that the electricity group reduces.Electric current is proportional to the net velocity of carrier number and direction of an electric field.
Below be the resistance calculations mode of MOSFET, sharpen understanding with helping:
R
ON＝R
N ++R
CH+R
A+R
J+R
E+R
S
Wherein: R
N +Be N
+The resistance that diffuse source (source diffusion) is produced;
R
CHThe resistance that is produced for passage (channel);
R
AThe resistance that is produced for Guinier-Preston zone (accumulation layer);
R
JThe resistance that is produced for the drift region (drift region) between N type substrate (N base);
R
EThe resistance that is produced for epitaxial wafer (EPI region);
R
SThe resistance that is produced for substrate (substrate).
Wherein:: W
DPeak width, N
D: EPI directly goes into chemical element concentration, q: electronics, μ
n: electron mobility, BVdss: breakdown voltage.
As seen, the width that increases the P+ zone can reduce the resistance of semiconductor and metal level, reaches the intensity that increases the anti-energy of snowslide.
Claims (6)
1. power type segregator metal oxide semiconductor fieldistor, by the snowslide that has barrier layer anti-can the unit and compound be trapped among snowslide anti-can be above the unit borderline region and be filled in the borderline region middle part and top and with anti-metal material contact window (5) formation that can cell conduction of snowslide, snowslide is anti-to be compounded with substrate below the unit, borderline region is made up of the composite semiconductor material layer (2) that is provided with between separator (1-1) and the oxide-diffused layer (22), it is characterized in that: adjacent with region of activation (4) below oxide-diffused layer (22) outer end; Region of activation (4) and N
+The butt joint of passage (23) outer end; Composite semiconductor material layer (2) outer end and oxide-diffused layer outer end are inwardly wrong, and add coated separator (1-2) in the outer end that composite semiconductor material layer (2) and oxide-diffused layer interlace.
2. according to the described power type segregator metal oxide semiconductor fieldistor of claim 1, it is characterized in that: also on oxide-diffused layer (22) horizontal direction, add end separator (1-3) outside the coated separator.
3. according to the described power type segregator metal oxide semiconductor fieldistor of claim 1, it is characterized in that: barrier layer integral body is rectangle in the anti-energy of the described snowslide cellular construction, and its long limit level is to being arranged on N
+Between the passage, the length on one side that barrier layer is long is greater than the N+ channel width.
4. according to the described power type segregator metal oxide semiconductor fieldistor of claim 1, it is characterized in that: the region of activation (4) adjacent with oxide-diffused layer one end is positioned at the below of end separator (1-3) and coated separator (1-2).
5. according to the described power type segregator metal oxide semiconductor fieldistor of claim 1, it is characterized in that: composite semiconductor material layer (2) outer end is shorter than oxide-diffused layer outer end.
6. according to the described power type segregator metal oxide semiconductor fieldistor of claim 1, it is characterized in that: described contact window (5) is positioned on the path of electron stream, with the same material of source electrode.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200710011533 CN100555664C (en) | 2007-06-01 | 2007-06-01 | Power type segregator metal oxide semiconductor fieldistor |
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|---|---|---|---|
| CN 200710011533 CN100555664C (en) | 2007-06-01 | 2007-06-01 | Power type segregator metal oxide semiconductor fieldistor |
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|---|---|
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| CN100555664C true CN100555664C (en) | 2009-10-28 |
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Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4376286A (en) * | 1978-10-13 | 1983-03-08 | International Rectifier Corporation | High power MOSFET with low on-resistance and high breakdown voltage |
| US4561003A (en) * | 1980-03-28 | 1985-12-24 | Siemens Aktiengesellschaft | Field effect transistor |
-
2007
- 2007-06-01 CN CN 200710011533 patent/CN100555664C/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4376286A (en) * | 1978-10-13 | 1983-03-08 | International Rectifier Corporation | High power MOSFET with low on-resistance and high breakdown voltage |
| US4376286B1 (en) * | 1978-10-13 | 1993-07-20 | Int Rectifier Corp | |
| US4561003A (en) * | 1980-03-28 | 1985-12-24 | Siemens Aktiengesellschaft | Field effect transistor |
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| CN101315949A (en) | 2008-12-03 |
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Inventor after: Hao Zhenjie Inventor after: Lv Xinli Inventor after: Yang Chunsong Inventor before: Lv Xinli Inventor before: Yang Chunsong |
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Free format text: CORRECT: INVENTOR; FROM: LV XINLI YANG CHUNSONG TO: HAO ZHENJIE LV XINLI YANG CHUNSONG |
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Owner name: DALIAN XINYUZHOU SEMICONDUCTOR TECHNOLOGY ENGINEER Free format text: FORMER OWNER: DALIAN YUZHOU ELECTRONICS CO., LTD. Effective date: 20130710 Owner name: DALIAN YUZHOU ELECTRONICS CO., LTD. Free format text: FORMER OWNER: DALIAN HUAKUN TECHNOLOGY CO., LTD. Effective date: 20130710 |
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Effective date of registration: 20130710 Address after: 116600 No. 304 Yingbin street, Dalian, Liaoning, Zhuanghe Patentee after: Dalian Yuzhou Electronics Co., Ltd. Patentee after: Dalian Xin Yuan semiconductor technology Engineering Research Co., Ltd. Address before: 116600 No. 304 Yingbin street, Liaoning, Zhuanghe Patentee before: Dalian Huakun Technology Co., Ltd. Patentee before: Dalian Yuzhou Electronics Co., Ltd. |