CN100553010C - Organic EL and manufacture method - Google Patents
Organic EL and manufacture method Download PDFInfo
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- CN100553010C CN100553010C CNB200610108094XA CN200610108094A CN100553010C CN 100553010 C CN100553010 C CN 100553010C CN B200610108094X A CNB200610108094X A CN B200610108094XA CN 200610108094 A CN200610108094 A CN 200610108094A CN 100553010 C CN100553010 C CN 100553010C
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Abstract
Provide a kind of and can prevent well that quality that operation damage causes descends and the high-quality organic EL and the manufacture method thereof of poor flow owing to electrode is subjected to.This organic EL comprises: first electrode (13); Protective layer (15), it is formed on first electrode (13), has the opening portion that first electrode (13) is exposed; Insulating barrier (17), it is formed on the protective layer (15); Organic layer (19), it is formed on from insulating barrier (17) and begins on first electrode (13) that exposes in opening portion, and comprises luminescent layer; And second electrode (21), it is formed on the organic layer (19), and the thickness of the Film Thickness Ratio organic layer (19) of protective layer (15) is thin.
Description
Technical field
The present invention relates to organic EL and manufacture method thereof.
Background technology
Organic electroluminescent device (organic electroluminescent (EL) element) is to make its excitation, luminous element by the organic fluorescence compound being applied electric field.Such organic EL has: self-luminous, wide viewing angle, high response speed, low driving voltage, colour features such as (full color), carry out practicability at present, can be applied to the color plane display device of miniscope panel, outdoor screen, computer and screen of TV set etc. and so on.
Organic EL forms the structure of clamping the organic layer with characteristics of luminescence by two electrodes.If two electrodes are applied direct voltage, then organic layer is injected from anode in the hole, and electronics injects organic layer from negative electrode in addition.By by applying the electric field that voltage produces, these carriers move and produce the compound of carrier to the inside of organic luminous layer.
And, a part of excitation luminescence molecule of the compound energy that discharges by electronics and hole.And then when the light emitting molecule that is energized gave off energy and returns ground state, the energy of part certain ratio was released out with the form of photon.The principle of luminosity of Here it is organic EL.
When making such organic EL, on matrixes such as glass substrate, be formed for driving organic EL and the switch that uses with driving element such as TFT and distribution etc., and cover with planarization film.Then, form first electrode, insulating barrier, luminescent layer, second electrode above the planarization film in order at this.
But in the process process of these operations, first electrode produces operation damage (processdamage) or adheres to dust etc.This can bring influence to the characteristic of organic EL, and causes the decline of luminous mass.
Technology as this situation of reply; following technology is disclosed: stacked above one another first electrode, diaphragm, the luminescent layer and second electrode that are made of organic substance on substrate; by before luminescent layer stacked, removing the diaphragm that is positioned at the pixel region on first electrode, make organic EL (spy opens the 2001-185363 communique)
But, according to above-mentioned technology, there is individual problem to be, because the thickness of diaphragm is thicker,, produce the poor flow of upper electrode (cathode electrode) 21 so luminescent layer, second electrode rupture because of the ladder difference or the depression of diaphragm.Promptly; be formed with the ladder depression poor or that when diaphragm forms, produce of the thickness that is equivalent to diaphragm by side etching (side etching) at the sidewall of diaphragm; under this ladder difference or the big situation that caves in; because of the ladder difference makes luminescent layer rupture; perhaps depression can not be imbedded luminescent layer, thus near the problem that exists luminescent layer depression, to rupture.And second electrode folded at the luminescent layer upper quilt layer might rupture too.Therefore, produce the poor flow of second electrode, the problem that organic EL action itself is bad.
Summary of the invention
The present invention is In view of the foregoing and the invention that proposes, and its purpose is to provide a kind of and can prevents well because electrode is subjected to the quality decline that the operation damage causes and the high-quality organic EL and the manufacture method thereof of poor flow.
Organic EL of the present invention is characterised in that, comprising: first electrode; Protective layer, it is formed on described first electrode, has first opening portion that described first electrode is exposed; Insulating barrier, it is formed on the described protective layer, has to be formed on locational second opening portion corresponding with described first opening portion; Organic layer, its be formed on the described insulating barrier and described first electrode that exposes in described first, second opening portion on, and comprise luminescent layer; And second electrode; it is formed on the described organic layer; the thickness of the described organic layer of Film Thickness Ratio of described protective layer is thin, and the sidepiece of described first opening portion relies on the outside than the sidepiece of described second opening portion and stagger on the position, and this position amount of staggering is smaller or equal to 1 μ m.
Organic EL of the present invention in addition is characterised in that the thickness of described second electrode of the Film Thickness Ratio of described protective layer is thin.
And then organic EL of the present invention is characterised in that the thickness of described insulating barrier diminishes towards described first opening portion of described protective layer.
Organic EL of the present invention in addition is characterised in that, the sidepiece of described second opening portion of described protective layer relies on the outside than the sidepiece of described first peristome of described insulating barrier and staggers, and width is staggered smaller or equal to 1 μ m in this position.
And then organic EL of the present invention is characterised in that, comprising: first electrode; Protective layer, it is formed on described first electrode; Insulating barrier, it has the opening portion that forms in the mode of exposing described protective layer on described protective layer; Organic layer, its be formed on the described insulating barrier and the described protective layer that exposes in the described opening portion of described insulating barrier on, and comprise luminescent layer; And second electrode; it is formed on the described organic layer; described protective layer has recess; described recess is formed on the position corresponding with the described opening portion of described insulating barrier; this concave depth is littler than the thickness of described organic layer; and the sidepiece of described recess relies on the outside than the sidepiece of described opening portion and staggers on the position, and this position amount of staggering is smaller or equal to 1 μ m.
Organic EL of the present invention in addition is characterised in that the described concave depth of described protective layer is littler than the thickness of described second electrode.
And then organic EL of the present invention is characterised in that, the sidepiece of the described recess of described protective layer relies on the outside than the sidepiece of described insulating barrier and staggers, and width is staggered smaller or equal to 1 μ m in this position.
Organic EL of the present invention in addition is characterised in that the thickness of described insulating barrier diminishes towards the described opening portion of described insulating barrier.
And then organic EL of the present invention is characterised in that described first electrode is made of aluminium, aluminium alloy, silver or silver alloy, and described protective layer is made of molybdenum.
On the other hand, method for manufacturing organic EL of the present invention is constituted as, and comprises following operation: the operation of prepared substrate, on described substrate stacked first electrode, constitute the protective material layer of protective layer and the insulation material layer that constitutes insulating barrier; The described insulation material layer of etching and form insulating barrier, the operation that the protective material layer is exposed from this opening portion partly with opening portion; Remove the described protective material layer that from described opening portion expose as mask by etching with described dielectric film and form the protective layer that has passed through side etching, this side etching width is smaller or equal to 1 μ m, and the operation that first electrode is exposed from described opening portion; On the described insulating barrier and on described first electrode that has exposed from described opening portion, form the operation of the organic layer that comprises luminescent layer in the thickness mode thicker than the thickness of described protective layer; And the operation that on described organic layer, forms second electrode.
Method for manufacturing organic EL of the present invention in addition is characterised in that described second electrode forms thicklyer than the thickness of described protective layer.
And then method for manufacturing organic EL of the present invention is constituted as, and comprises following operation: the operation of prepared substrate, stacked first electrode, protective material layer and insulation material layer on described substrate; The described insulation material layer of etching and form insulating barrier, the operation that the protective material layer is exposed from this opening portion partly with opening portion; To remove the mid portion that arrives on the vertical direction from the described protective material layer that described opening portion exposes by etching, thereby recess is set at described protective material layer, make that the thickness of medial region of the described opening portion of Film Thickness Ratio of exterior lateral area of described opening portion is little, form the operation of the protective layer that has passed through side etching with this, this side etching width is smaller or equal to 1 μ m; On described insulating barrier and in the recess of the described protective layer in the described opening portion, form the operation of the organic layer that comprises luminescent layer in the thickness mode thicker than described concave depth; And the operation that on described organic layer, forms second electrode.
Method for manufacturing organic EL of the present invention in addition is characterised in that described second electrode forms thicklyer than the described concave depth of described protective layer.
And then method for manufacturing organic EL of the present invention is characterised in that, when the described protective material layer of etching, uses the selection of described protective material layer is carried out wet etching than the corrosive agent greater than 10.
Method for manufacturing organic EL of the present invention in addition is characterised in that, as described corrosive agent, use the ratio that contains of nitric acid to contain the mixed acid of ratio as 25wt%～45wt%, phosphoric acid as 0.1wt%～5wt% as the ratio that contains of 15wt%～35wt%, acetic acid.
And then method for manufacturing organic EL of the present invention is characterised in that the side etching width of the described protective layer after the etching of described protective material layer is smaller or equal to 1 μ m.
According to the present invention, can provide the high-quality organic EL of the poor flow that prevents electrode effectively or fracture of organic layer etc.And, can prevent well that electrode is subjected to the operation damage when making organic EL, thereby suppress the decline of quality.
Description of drawings
Fig. 1 is the profile of structure of the organic EL of expression first execution mode of the present invention;
Fig. 2 is the profile of the method for manufacturing organic EL of explanation first execution mode of the present invention;
Fig. 3 is the profile of the method for manufacturing organic EL of explanation first execution mode of the present invention;
Fig. 4 is the profile of the method for manufacturing organic EL of explanation first execution mode of the present invention;
Fig. 5 is the profile of the method for manufacturing organic EL of explanation first execution mode of the present invention;
Fig. 6 is the profile of the method for manufacturing organic EL of explanation first execution mode of the present invention;
Fig. 7-the 1st illustrates the profile of the method for manufacturing organic EL of first execution mode of the present invention;
Fig. 7-the 2nd illustrates the profile of the method for manufacturing organic EL of first execution mode of the present invention;
Fig. 7-the 3rd illustrates the profile of existing method for manufacturing organic EL;
Fig. 7-the 4th illustrates the profile of existing method for manufacturing organic EL;
Fig. 7-the 5th illustrates the profile of existing method for manufacturing organic EL;
Fig. 8 is the profile of the method for manufacturing organic EL of explanation first execution mode of the present invention;
Fig. 9 is the profile of the method for manufacturing organic EL of explanation first execution mode of the present invention;
Figure 10 is the profile of the method for manufacturing organic EL of explanation second execution mode of the present invention;
Among the figure:
The 11-matrix part; 12-organic electroluminescent device portion; 13-lower electrode (anode electrode); The 15-protective layer; 15a-protective material layer; The 15b-recess; The 17-interlayer insulating film; The 17a-insulation material layer; The 19-organic electro luminescent layer; The 19a-organic electro luminescent layer; The 19b-organic electro luminescent layer; The 19c-organic electro luminescent layer; 21-upper electrode (cathode electrode); W1-side etching width; W2-side etching width.
Embodiment
Below, be elaborated based on the execution mode of accompanying drawing to organic EL of the present invention and manufacture method thereof.And the present invention is not limited to following record, can suitably change in the scope that does not break away from purport of the present invention.And in the represented drawing of following execution mode, for easy understanding, the engineer's scale between each parts situation with reality sometimes is different.
(first execution mode)
Fig. 1 is the profile of simple structure of the organic EL of expression first execution mode of the present invention.As shown in Figure 1, the organic EL of present embodiment is constituted as, and has: matrix part 11, and it is formed with driving elements such as the TFT that is used to drive organic EL and uses and distribution etc. on matrixes such as glass substrate; And organic electroluminescent device portion 12, it is formed with organic EL.And the organic EL of present embodiment has adopted from top emission structure (top emission) structure of upper face side (organic electroluminescent device portion 12 sides) picked-up light.In addition, though be provided with the planarization layer of upper layer part such as being used for above-mentioned TFT of planarization and distribution at matrix part 11, owing to do not have direct relation with purport of the present invention, so omit detailed explanation and diagram herein.
As shown in Figure 1, the structure of organic electroluminescent device portion 12 is, has: first electrode that is formed on the matrix part 11 is a lower electrode (anode electrode) 13; Be formed to the distance of the regulation of being separated by the protective layer 15 on this lower electrode (anode electrode) 13; Be formed at the interlayer insulating film 17 on the protective layer 15; Be formed at the organic electro luminescent layer (organic layer) 19 on the lower electrode (anode electrode) 13 and on the interlayer insulating film 17; Second electrode that is formed on the organic electro luminescent layer 19 is a upper electrode (cathode electrode) 21.
Lower electrode (anode electrode) 13 is that the high material of light reflectivities such as gold, silver (Ag) or its alloy that closes of alloy, aluminium (Al) and the yttrium (Y) of aluminium (Al) or its alloy, aluminium (Al) and neodymium (Nd) constitutes by the high material of light reflectivity.By utilizing the high material of light reflectivity to constitute lower electrode (anode electrode) 13, in the organic EL structure of top emission structure, just can improve the light ingestion efficiency like this, in organic electro luminescent layer 19, can apply flexibly effectively luminous light.
, as protective layer 15 desired conditions, can enumerate, it is by selecting etched material to constitute by wet etching herein.This be because, as described later, need be when forming protective layer 15 film of the constituent material of film forming protective layer 15, before being formed with organic electroluminescent layer 19, select to remove this film by wet etching, carry out patterning.In addition, preferably, as described later, by constituting at forming of interlayer insulating film 17 protects lower electrode (anode electrode) 13 to avoid operation damage (patience is arranged) in the operation material.That is, preferably constitute by the material that has patience with respect to the developer solution that when removing insulation material layer 17a, uses.
And protective layer 15 is preferably, and is good with the connecting airtight property of lower electrode (anode electrode) 13.Thus, can prevent well because of coming off of protective layer 15 etc. cause bad.As the material of the condition that satisfies such protective layer 15, for example can constitute by molybdenum (Mo) or its alloy.
By utilizing molybdenum (Mo) or its alloy to constitute protective layer 15, constituting by above-mentioned aluminium or its alloy under the situation of lower electrode (anode electrode) 13, between protective layer 15 and lower electrode (anode electrode) 13, can obtain good connecting airtight property.Therefore, can prevent well because of coming off of protective layer 15 etc. cause bad.
And the constituent material of such protective layer 15 is not limited to metal material, for example also can use insulating material such as silicon nitride.
The structure of organic electro luminescent layer 19 comprises utilizes the luminescent layer of organic series material as luminous element.Organic electro luminescent layer 19 can adopt: single layer structure or respectively by function stacked any one of sandwich construction.For example, in the single layer structure that organic electro luminescent layer 19 just is made of the individual layer of luminescent layer, can adopt: in the main material that has both cavity conveying characteristic and electron transport characteristic, mix dopant material and constitute that the method for luminescent layer or use have applied the material of the characteristics of luminescence, cavity conveying characteristic and electron transport characteristic and the method etc. that constitutes luminescent layer with characteristics of luminescence.Such single layer structure has and not only can simplify element formation operation, and the advantage of organic EL cheaply can be provided.
In addition, adopt under the situation of sandwich construction in structure as organic electro luminescent layer 19, for example except luminescent layer, among hole transporting layer, hole injection layer, hole trapping layer, electron supplying layer, electron injecting layer, electronic stopping layer, select one or more organic electroluminescent layer 19 that constitute.For example, be under the situation of the sandwich construction that constitutes by luminescent layer, hole trapping layer and electron supplying layer in organic electro luminescent layer 19, because control is from the injection rate of the electric charge of two electrodes, the hole at compound position is equated, so can form following structure: between as lower electrode (anode electrode) 13 of hole injecting electrode work and electron supplying layer, be provided with the hole trapping layer with the density of electronics.By adopting such structure, there is individual advantage to be, the hole at compound position is equated with the density of electronics, can improve luminous efficiency.And, similarly, be under the situation of the sandwich construction that constitutes by luminescent layer, electronic stopping layer and hole transporting layer in organic electro luminescent layer 19, also can the electronic stopping layer be set becoming between the upper electrode of electron injection electrode (cathode electrode) 21 and the hole transporting layer.
Upper electrode (cathode electrode) 21 for from upper face side (organic electroluminescent device portion 12 sides) picked-up light, can discharge luminous transparent conductivity material to the outside by indium tin oxide (ITO), tin-oxide etc. and constitute.
In the organic EL of the present embodiment that constitutes as described above, protective layer 15 is formed, and the thickness of its Film Thickness Ratio organic electro luminescent layer 19 is thin.Therefore, prevent because the fracture of the organic electro luminescent layer 19 that causes in the ladder difference of the opening portion of protective layer 15.Consequently, prevent that lower electrode 13 from exposing from the fracture portion of organic electro luminescent layer 19, prevent that well upper electrode 21 and lower electrode 13 are via the short circuit of above-mentioned fracture portion.
In addition, in the organic EL of the present embodiment that constitutes as described above, protective layer 15 is formed, and the thickness of its Film Thickness Ratio upper electrode (cathode electrode) 21 is thin.Therefore, prevent because the broken string of the upper electrode (cathode electrode) 21 that causes in the ladder difference of the opening portion of protective layer 15, prevent the poor flow of the upper electrode (cathode electrode) 21 that therefore causes effectively.
In the organic EL of the present embodiment that constitutes as described above, protective layer 15 preferably its thickness is about 5nm～500nm.And, more preferably be about 5nm～100nm.In addition, in the viewpoint of the broken string of fracture that prevents organic electro luminescent layer 19 or upper electrode 21, the thickness of interlayer insulating film 17 is because following reason and being a problem hardly.Promptly; the thickness of interlayer insulating film 17 is its less thick near the opening portion of protective layer 15; near the inclination on the surface of the interlayer insulating film 17 the opening portion is slower; therefore; be coated with organic electroluminescent layer 19 or upper electrode 21 well in this part, the size of the thickness of interlayer insulating film 17 is a problem hardly.
In addition, in the organic EL of the present embodiment that constitutes as described above, the sidewall of the opening portion of protective layer 15 relies on the outside than the sidepiece of interlayer insulating film 17 and staggers, and is formed with depression in this part.The position amount of staggering of the sidepiece of the sidewall of the opening portion of this recess and interlayer insulating film 17 is smaller or equal to 1 μ m.Therefore, prevent the fracture of the organic electro luminescent layer 19 that causes because of near the depression that the opening portion of protective layer 15, forms and the broken string of upper electrode (cathode electrode) 21, the poor flow that prevents effectively so cause.In addition; if the above-mentioned position amount of staggering is smaller or equal to 1 μ m; then organic electro luminescent layer 19 or upper electrode 21 are filled near the depression of opening portion of protective layer 15 easily, and can suppress with the depression is the organic electro luminescent layer 19 of starting point or coming off of upper electrode 21.And then near the interlayer insulating film 17 the opening portion is supported in downside well by organic electro luminescent layer 19 that is filled into above-mentioned depression or upper electrode 21, can prevent that the shape of interlayer insulating film 17 from producing distortion.
Therefore; in the organic EL of present embodiment; the quality that operation damage when utilizing protective layer 15 to prevent because of manufacturing causes descends; and prevent the fracture of the organic electro luminescent layer 19 that ladder difference or depression because of protective layer 15 cause and the broken string of upper electrode (cathode electrode) 21, realize preventing so the high-quality organic EL of the poor flow of the upper electrode (cathode electrode) 21 that causes.
In addition, in the present invention, type of drive can adopt any mode of passive matrix (passive matrix) mode, active matrix (active matrix) mode.And,, also can adopt any mode of top emission design, bottom emission mode in the present invention even relevant with the picked-up mode of light.
Then, the method for manufacturing organic EL for above-mentioned present embodiment describes with reference to the accompanying drawings.
At first, form in the operation at matrix part, driving elements such as the TFT that is formed for driving organic EL on matrixes such as glass substrate and uses and distribution etc. form planarization insulating layer on the matrix that has formed these parts, form matrix part 11 as shown in Figure 2.
Then, as shown in Figure 3, on matrix part 11, for example form aluminium (Al) film as lower electrode (anode electrode) 13.
Then, as shown in Figure 4, on lower electrode (anode electrode) 13, for example form molybdenum (Mo) film as protective material layer 15a.Herein, the thickness of protective material layer 15a is the thickness thinner than the thickness of upper electrode (cathode electrode) 21, and is the thickness thinner than the thickness of upper electrode (cathode electrode) 21.
Therefore; can prevent effectively: cause fracture or the broken string of upper electrode (cathode electrode) 21 or the poor flow of upper electrode (cathode electrode) 21 of the organic electro luminescent layer 19 that in the operation of back, forms by the side etching of the protective material layer 15a that when protective material layer 15a carried out etching, produces.In addition, the thickness of protective material layer 15a preferably is about about 5nm～500nm, in addition, and more preferably about 5nm～100nm.
In addition; by lower electrode (anode electrode) 13 and protective material layer 15a and aluminium (Al) are made up with molybdenum (Mo); can make lower electrode (anode electrode) 13 good, can prevent the bad generation that causes because of coming off of protective material layer 15a etc. with the connecting airtight property of protective material layer 15a.And; by carrying out such combination; utilizing after sputter (sputtering) method formed lower electrode (anode electrode) 13; owing to utilize sputtering method to form protective material layer 15a at once after can only replacing chamber, so can form lower electrode (anode electrode) 13 and protective material layer 15a efficiently.
Then, as shown in Figure 5, on protective material layer 15a, form insulation material layer 17a.Then, utilize etching that insulation material layer 17a is carried out patterning as limiting section protective material layer 15a, as shown in Figure 6, form interlayer insulating film 17, making becomes the opening portion of pixel region in the zone that forms organic EL.That is, partly remove insulating barrier 17a by general photoetching technique and form opening portion, obtain pixel region.Interlayer insulating film 17 is patterned near opening portion and makes thickness diminish at this moment.For at such interlayer insulating film of processing in shape 17, for example, use the material of the anticorrosive additive material (for example, the anticorrosive additive material of third rare resin series) of eurymeric as insulation material layer 17a.In this case, if when peristome is arranged at insulation material layer 17a to insulation material layer 17a irradiates light, though then removed the insulation material layer 17a of the part of irradiates light, but light is owing to the bottom (matrix part 11 sides) that is difficult to arrive insulation material layer 17a, so the bottom of the peristome of insulation material layer 17a is narrower than top.Its result, interlayer insulating film 17 is patterned, and makes its thickness diminish near opening portion.
Herein, the lower electrode (anode electrode) 13 by aluminium (Al) or its alloy etc. constitute a little less than its patience of the developer solution that uses (etching solution), and is dissolved in this developer solution when removing insulation material layer 17a.But in the present embodiment, the protective material layer 15a that has patience with respect to this developer solution is formed on the lower electrode (anode electrode) 13.
Thus, even in the operation of removing insulation material layer 17a, lower electrode (anode electrode) 13 also can be dissolved in developer solution hardly, and the surface state of lower electrode (anode electrode) 13 can roughening.Therefore, even after the operation of removing insulation material layer 17a, same good flatness when the surface of lower electrode (anode electrode) 13 also can keep forming with this lower electrode (anode electrode) 13 can prevent the generation of the flicker that causes because of interelectrode short circuit.
In addition; though this protective material layer 15a is removed in subsequent processing; but before being formed with organic electroluminescent layer 19; because this protective material layer 15a covers on the lower electrode (anode electrode) 13; so can suppress the formation of the oxide-film on lower electrode (anode electrode) 13 surfaces in the manufacturing process, can suppress deterioration of the characteristic that the oxide-film because of lower electrode (anode electrode) 13 surfaces causes etc.
Then, shown in Fig. 7-1, utilize interlayer insulating film 17 as mask; by wet etching select to remove pixel region the bottom, be the protective material layer 15a of the bottom of above-mentioned opening portion; thereby lower electrode (anode electrode) 13 surfaces are exposed, form opening portion, form protective layer 15 thus.Herein, alternatively the corrosive agent of protective material layer 15a is removed in etching, the preferred corrosive agent of selecting to compare greater than 10 that uses.By use selecting under the situation of the warpage that can make interlayer insulating film 17 and lower electrode (anode electrode) 13 hardly, only to select to remove the protective material layer 15a of hope position than greater than 10 corrosive agent.
And, more preferably, use to select than being about 20～30 corrosive agent as this corrosive agent.By using such corrosive agent, can further only select to remove the protective material layer 15a of hope position well.Herein, alternatively the corrosive agent of the protective material layer 15a that is formed by molybdenum (Mo) is removed in etching, for example, can use: the ratio that contains of nitric acid is 15wt%～35wt%; The ratio that contains of acetic acid is 25wt%～45wt%; Phosphoric acid contain the mixed acid that ratio is 0.1wt%～5wt%.And, as such mixed acid, for example can use CMK123 (nitric acid: acetic acid: the mixed acid of phosphoric acid=26: 36: 2).
And, shown in Fig. 7-2, by having selected to remove in the protective layer 15 that protective material layer 15a form, establish side etching width W 1 for smaller or equal to 1 μ m.This side etching width W 1 can be controlled by thickness, the corrosive agent of selecting protective material layer 15a.For example, under the situation of having used above-mentioned CMK123 as corrosive agent, by carry out the etching of 10 seconds～30 second time at spray regime, impregnation method or alr mode, carry out wet etching, thus, can make side etching width W 1 is smaller or equal to 1 μ m.By making side etching width W 1 is smaller or equal to 1 μ m; can prevent the generation of the broken string of the fracture of the organic electro luminescent layer 19 that the depression owing to the protective layer 15 that utilizes side etching to produce causes and upper electrode (cathode electrode) 21, the generation of the poor flow of the upper electrode (cathode electrode) 21 that can prevent effectively so cause.In addition, if side etching width W 1 smaller or equal to 1 μ m, then organic electro luminescent layer 19 or upper electrode 21 are filled in the depression of protective layer 15 easily, can suppress with the depression is the organic electro luminescent layer 19 of starting point or coming off of upper electrode 21.And then the shape that can prevent the interlayer insulating film 17 that causes because of above-mentioned depression produces distortion.
Under the thick situation of the thickness of organic electro luminescent layer 19 that the Film Thickness Ratio of protective layer 15 forms in the back or upper electrode 21; when being formed with organic electroluminescent layer 19 or upper electrode 21; if it is relatively poor that ladder covers (step coverage), then organic electro luminescent layer 19 or upper electrode 21 become easily in the sidewall fracture of the opening portion of protective layer 15.In addition; shown in Fig. 7-3; if the side etching width W 2 of protective layer 15 is very large more than the situation of Fig. 7-2, then organic electro luminescent layer 19 just can not be imbedded the depression of the protective layer 15 that is produced by side etching, does not just have the supporting mass that is supported with organic electroluminescent layer 19 near this depression.Consequently, shown in Fig. 7-4, at recess, organic electro luminescent layer fragments into organic electro luminescent layer 19a, organic electro luminescent layer 19b, organic electro luminescent layer 19c easily.
In addition; shown in Fig. 7-5, even do not rupture in organic electro luminescent layer 19, organic electro luminescent layer can not enter into the depression of the protective layer 15 that is produced by side etching yet; and produce the space, thereby be that starting point organic electro luminescent layer 19 is easy to generate and comes off with this space at this recess.And then; because above-mentioned space; in the organic electro luminescent layer 19 of the upside of interlayer insulating film 17 configuration, broken, might exist the shape of interlayer insulating film 17 to produce the problem of being out of shape with the stress equilibrium between the protective layer 15 in the downside configuration of interlayer insulating film 17.
But, in the present embodiment, shown in Fig. 7-2, owing to side etching width W 1 that utilize to select to remove the protective layer 15 that protective material layer 15a form smaller or equal to 1 μ m, so can prevent so bad generation well.
Then, as shown in Figure 8, be formed with organic electroluminescent layer 19 on the lower electrode that has exposed (anode electrode) 13 and on the interlayer insulating film 17.At this moment, the thickness of organic electro luminescent layer 19 is thickness thicker than the thickness of protective layer 15.The thickness of the Film Thickness Ratio protective layer 15 by making organic electro luminescent layer 19 is thick; even it is relatively poor that the ladder of organic electro luminescent layer 19 covers; also can prevent the fracture of organic electro luminescent layer 19 of side-walls of the opening portion of protective layer 15 effectively; and imbed the depression of protective layer 15 by organic electro luminescent layer 19, thereby can prevent coming off or the distortion of the shape of interlayer insulating film 17 of the organic electro luminescent layer 19 that causes because of depression.
And, as shown in Figure 9, on organic electro luminescent layer 19, form upper electrode (cathode electrode) 21.Herein, the thickness of upper electrode (cathode electrode) 21 is thickness thicker than the thickness of protective layer 15.The thickness of the Film Thickness Ratio protective layer 15 by making upper electrode (cathode electrode) 21 is thick; even it is relatively poor that the ladder of upper electrode 21 covers; also can prevent the fracture of upper electrode 21 of side-walls of the opening portion of protective layer 15 effectively; even and under the thin situation of the Film Thickness Ratio of organic electro luminescent layer 19; also it is remedied; imbed the depression of protective layer 15 by organic electro luminescent layer 19, thereby can prevent coming off or the distortion of the shape of interlayer insulating film 17 of the upper electrode 21 that causes because of depression.
By more than, prevent that the quality of the organic EL that the operation damage of the electrode when making causes from descending, and can make the high-quality organic EL shown in Figure 1 that prevents well because of the poor flow of resetting the electrode that protective layer causes.
In addition, in the above-described embodiment, utilize respectively upper electrode 21 as cathode electrode, lower electrode 13 as anode electrode, certainly, also can utilize respectively upper electrode 21 as anode electrode, lower electrode 13 as cathode electrode.
(second execution mode)
Figure 10 is the profile of structure of the organic EL of expression second execution mode of the present invention., mainly describe herein, omit in principle for the explanation of other common structures for the structure different with the organic EL of first execution mode.
In the present embodiment; different with first execution mode; do not remove the protective material layer 15a of the opening portion that is positioned at interlayer insulating film 17 fully, and make the interior remaining part of protective material layer 15a of opening portion of interlayer insulating film 17, thereby form recess 15b at protective layer 15.Consequently, the thickness of the protective layer 15 at the interior zone place of the opening portion of interlayer insulating film 17 is set to, and is littler than the thickness of the exterior lateral area place protective layer 15 of the opening portion of interlayer insulating film 17.
By adopting such structure, owing to the protective layer 15 of a remaining part on lower electrode 13,, compare with first execution mode so there is individual advantage to be, when etching protective material layer 15a, can reduce the damage that lower electrode 13 is subjected to.
In addition; if the thickness of the protective layer 15 of the formation location of recess 15b is big; then adopt under the situation of top emission design at organic EL; because the tendency of decline is arranged in the reflection of light rate of lower electrode 13 sides; so preferably, the thickness of the protective layer 15 of the formation location of recess 15b is set for smaller or equal to 10nm.
And, because that the depth d of the recess 15b of protective layer 15 is set at is littler than the thickness of organic electro luminescent layer 19, so prevent the fracture of the organic electro luminescent layer 19 that the ladder difference because of the recess 15b of protective layer 15 causes.
In addition, because that the depth d of the recess 15b of protective layer 15 is set at is littler than the thickness of upper electrode 21,, prevent the poor flow of upper electrode 21 effectively so prevent the broken string of the upper electrode 21 that the ladder difference because of the recess 15b of protective layer 15 causes.
And the sidepiece of the recess 15b of protective layer 15 relies on the outside than the sidepiece of insulating barrier 17 and staggers, and therefore this position amount of staggering, prevents well smaller or equal to 1 μ m: be thereby come off in organic electro luminescent layer 19 generations with the space that is produced by side etching.
Industrial applicibility
As previously discussed, organic EL of the present invention is at display pannel, outdoor screen, meter Requiring in the high-quality color plane display device of screen of calculation machine and television set etc. and so on is special Not useful.
Claims (13)
1. an organic EL is characterized in that,
Comprise:
First electrode;
Protective layer, it is formed on described first electrode, has first opening portion that described first electrode is exposed;
Insulating barrier, it is formed on the described protective layer, has to be formed on locational second opening portion corresponding with described first peristome;
Organic layer, its be formed at continuously on the described insulating barrier and described first electrode that exposes in described first, second opening portion on, and comprise luminescent layer; And
Second electrode, it is formed on the described organic layer,
The thickness of the described organic layer of Film Thickness Ratio of described protective layer is thin, and the sidepiece of described first opening portion relies on the outside than the sidepiece of described second opening portion and stagger on the position, and this position amount of staggering is smaller or equal to 1 μ m.
2. organic EL according to claim 1 is characterized in that,
The thickness of described second electrode of the Film Thickness Ratio of described protective layer is thin.
3. organic EL according to claim 1 and 2 is characterized in that,
The thickness of described insulating barrier diminishes towards described first opening portion of described protective layer.
4. an organic EL is characterized in that,
Comprise:
First electrode;
Protective layer, it is formed on described first electrode;
Insulating barrier, it has the opening portion that forms in the mode of exposing described protective layer on described protective layer;
Organic layer, its be formed at continuously on the described insulating barrier and the described protective layer that exposes in the described opening portion of described insulating barrier on, and comprise luminescent layer; And
Second electrode, it is formed on the described organic layer,
Described protective layer has recess; described recess is formed on the position corresponding with the opening portion of described dielectric film; this concave depth is littler than the thickness of described organic layer; and the sidepiece of described recess relies on the outside than the sidepiece of described opening portion and staggers on the position, and this position amount of staggering is smaller or equal to 1 μ m.
5. organic EL according to claim 4 is characterized in that,
The described concave depth of described protective layer is littler than the thickness of described second electrode.
6. according to claim 4 or 5 described organic ELs, it is characterized in that,
The thickness of described insulating barrier diminishes towards the described opening portion of described insulating barrier.
7. organic EL according to claim 1 and 2 is characterized in that,
Described first electrode is made of aluminium, aluminium alloy, silver or silver alloy, and described protective layer is made of molybdenum.
8. a method for manufacturing organic EL is characterized in that,
Comprise:
The operation of prepared substrate, on described substrate stacked first electrode, constitute the protective material layer of protective layer and the insulation material layer that constitutes insulating barrier;
Partly the described insulation material layer of etching, formation have the insulating barrier of opening portion, the operation that the protective material layer is exposed from this opening portion;
Remove the described protective material layer that from described opening portion expose as mask by etching with described dielectric film and form the protective layer that has passed through side etching, this side etching width is smaller or equal to 1 μ m, and the operation that first electrode is exposed from described opening portion;
On described first electrode that has exposed on the described insulating barrier and from described opening portion, than the thickness of described protective layer more heavy back form the operation of the organic layer that comprises luminescent layer; And
On described organic layer, form the operation of second electrode.
9. method for manufacturing organic EL according to claim 8 is characterized in that,
Described second electrode forms thicklyer than the thickness of described protective layer.
10. a method for manufacturing organic EL is characterized in that,
Comprise:
The operation of prepared substrate, stacked first electrode, protective material layer and insulation material layer on described substrate;
Partly the described insulation material layer of etching, formation have the insulating barrier of opening portion, the operation that the protective material layer is exposed from this opening portion;
To remove the mid portion that arrives on the vertical direction from the described protective material layer that described opening portion exposes by etching, thereby recess is set at described protective material layer, and forming the operation of the protective layer passed through side etching, this side etching width is smaller or equal to 1 μ m;
On described insulating barrier and in the recess of the described protective layer in the described opening portion, than described concave depth more heavy back form the operation of the organic layer comprise luminescent layer; And
On described organic layer, form the operation of second electrode.
11. method for manufacturing organic EL according to claim 10 is characterized in that,
Described second electrode forms thicklyer than the described concave depth of described protective layer.
12. any described method for manufacturing organic EL in 11 is characterized in that according to Claim 8,
When the described protective material layer of etching, use for the selection of described protective material layer and carry out etching than corrosive agent greater than 10.
13. method for manufacturing organic EL according to claim 12 is characterized in that,
As described corrosive agent, use the ratio that contains of nitric acid to contain the mixed acid of ratio as 25wt%～45wt%, phosphoric acid as 0.1wt%～5wt% as the ratio that contains of 15wt%～35wt%, acetic acid.
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| JP2005220976 | 2005-07-29 | ||
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