CN100544236C - The generation device of low dithering dual wavelength ultrashort light pulse - Google Patents
The generation device of low dithering dual wavelength ultrashort light pulse Download PDFInfo
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- CN100544236C CN100544236C CNB2005100127978A CN200510012797A CN100544236C CN 100544236 C CN100544236 C CN 100544236C CN B2005100127978 A CNB2005100127978 A CN B2005100127978A CN 200510012797 A CN200510012797 A CN 200510012797A CN 100544236 C CN100544236 C CN 100544236C
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Abstract
A kind of generation device of low dithering dual wavelength ultrashort light pulse belongs to optical communication and ultrafast phenomena research field.It is characterized in that: utilize a temperature to control tuning gain switch F-P semiconductor laser as main laser; Adopt two dfb semiconductor lasers to provide light beam to go into as the external seed source to main laser, implementation pattern is selected output and the effectively shake of reduction light pulse in main laser; Utilize optical circulator and fiber grating to realize the output that separates of dual wavelength, thereby obtain low dithering dual wavelength ultrashort light pulse.The present invention has realized the low jitter of gain switch ultrashort light pulse and dual-wavelength tunable output simultaneously, have output stable, simple in structure, be easy to realization and advantage such as applied widely.
Description
Technical field
The generation device of low dithering dual wavelength ultrashort light pulse of the present invention belongs to optical communication and ultrafast phenomena research field.
Background technology
Produce the semiconductor laser pulse with gain switch (electrical modulation) method, have advantages such as simple in structure, that volume is little, price is low, pulse repetition frequency is adjustable continuously, so in the research of optical communication system and ultrafast phenomena, use gain-switching semiconductor lasers at present as laser pulse source more.But because this light pulse is to set up on the basis of spontaneous radiation in laser chamber,, thereby cause the transient change of light pulse repetition rate, cause the time jitter of pulse so the fluctuating of spontaneous radiation will cause the randomness of light pulse generation time.The time jitter of light pulse will directly influence the error rate of optical communication system, become the restriction optical communication to a bottleneck of high speed development more.
Shake also can produce restriction to other application of ultrashort light pulse, for example in electro-optic sampling system based on ultrashort light pulse, the existence of shake has reduced the temporal resolution of measuring system, in measuring based on the pumping-detection of laser pulse probe, the existence of shake can reduce the signal to noise ratio of measuring system.
The time jitter that reduces light pulse can adopt the light injection method to realize.Its principle is the fluctuation of number of photons when utilize injecting light and suppressing light pulse that spontaneous radiation causes and set up, thereby reduces the time jitter of light pulse.Present reduction dither technique can be divided into from the seed injection technique and outside light beam go into technology, the former requires fine adjustment from seed pulse two-way time of feedback cavity outside, make it equal the integral multiple in light pulse cycle, this makes the repetition rate of light pulse not regulate arbitrarily, has limited its range of application.Outer light beam is gone into the mono-colour laser of technology use tunable wave length as seed source, and cost is higher.At present, the light pulse of two kinds of technology reduction shake back gained is single wavelength.
And in wavelength division multiplexing (WDM) and dense wave division multipurpose (DWDM) optical communication system, need the light impulse source of multi-wavelength.Produce the focus that the multi-wavelength ultrashort light pulse is becoming people's research based on gain switch F-P semiconductor laser.
Summary of the invention
The purpose of the generation device of low dithering dual wavelength ultrashort light pulse of the present invention is a kind of dual wavelength ultrashort light pulse source that can produce low jitter simultaneously of realizing, thus disclose a kind of can implementation structure simple, output is stablized and the technical scheme of the generation device of the low dithering dual wavelength ultrashort light pulse that side mode suppression ratio is big.
The generation device of low dithering dual wavelength ultrashort light pulse of the present invention is characterized in that: be made up of main laser system, external seed source injected system and light pulse dual wavelength piece-rate system; The main laser system is made up of direct current biasing source (1), signal source (2), t connector (3), F-P semiconductor laser (4) and temperature controller (5), direct current biasing source (1) and signal source (2) are connected on the t connector (3) by the high frequency cable of 5-10cm, F-P semiconductor laser (4) is welded on the t connector (3), the respective pins welding of the output circuit of temperature controller (5) and F-P semiconductor laser (4); External seed source injected system is by left side optical circulator (6), fiber coupler (9), left side optical fiber polarization controller (10) and the right optical fiber polarization controller (11), the left side is built-in with the dfb semiconductor laser (12) of optical isolator and the dfb semiconductor laser (14) that the right is built-in with optical isolator, left side temperature controller (13) and the right temperature controller (15) are formed, utilize left side temperature controller (13) and the right temperature controller (15) to control the working temperature that the left side is built-in with the dfb semiconductor laser (12) and the dfb semiconductor laser (14) that the right is built-in with optical isolator of optical isolator respectively, the output wavelength of regulating them approaches the corresponding longitudinal mode of F-P semiconductor laser (4), left side optical circulator (6) utilizes the FC/PC optical patchcord to be connected with fiber coupler (9), the output of left side optical fiber polarization controller (10) and the right optical fiber polarization controller (11) is FC/PC, one end of left side optical fiber polarization controller (10) connects fiber coupler (9), the other end is connected with the tail optical fiber that the left side is built-in with the dfb semiconductor laser (12) of optical isolator, one end of the right optical fiber polarization controller (11) connects fiber coupler (9), the other end connects the dfb semiconductor laser (14) that the right is built-in with optical isolator, and left side temperature controller (13) and the right temperature controller (15) are built-in with the dfb semiconductor laser (12) of optical isolator with the left side respectively and dfb semiconductor laser (14) that the right is built-in with optical isolator welds; Dual wavelength light pulse piece-rate system is made up of the right optical circulator (7) and fiber grating (8), and the II end reflection end of the right optical circulator (7) utilizes the FC/PC optical patchcord to be connected with arbitrary end of fiber grating (8); Main laser system, external seed source injected system and light pulse dual wavelength piece-rate system are connected by ' T ' shape by three port left side optical circulators (6) in the injected system of external seed source, the fiber coupler (9) of external seed source injected system utilizes the FC/PC adpting flange to connect the incident end of this optical circulator, the output tail optical fiber of the F-P semiconductor laser (4) of main laser system connects the reflection end of this optical circulator by the FC/PC adpting flange, and the incident end of the right optical circulator (7) of dual wavelength piece-rate system connects the exit end of this optical circulator.
External seed source injected system provides the light seed of suitable dual wavelength to the main laser system, thereby to realize that injection locking obtains dual wavelength model selection output; Simultaneously, the light seed provides the excitation of semiconductor laser 4 oscillation threshold place photon densities after injecting the main laser system, can effectively reduce the time jitter of light pulse; Behind the light pulse process optical circulator 7 and fiber grating 8 of output, dual wavelength is realized separating, and finally produces low jitter, dual wavelength ultrashort light pulse.
The generation device of the ultrashort light pulse that the generation device of the low dithering dual wavelength ultrashort light pulse that the present invention proposes and having appeared in the newspapers is led relatively has following advantage:
1, the seed source injected system need not EDFA, optics original paper such as tunable optic filter.
2, utilize the thermal tuning technology, accurately the wavelength of light seed is injected in control, makes locking modeling efficient height, stable, and the gained side mode suppression ratio is big.
3, utilize light beam to go into technology, realized the shake reduction and the dual wavelength selection output of gain switch light pulse simultaneously.
4, light pulse dual wavelength piece-rate system is simple in structure, only utilizes a fiber grating to cooperate an optical circulator effectively two wavelength to be realized separation.
In a word, output optical pulse of the present invention is stable, shake is low, dual wavelength side mode suppression ratio height, simple in structure, be easy to realize.
Description of drawings
The structural representation of the generation device execution mode one of Fig. 1, low dithering dual wavelength ultrashort light pulse of the present invention:
1: direct current biasing source, 2: signal source, 3:T type connector, the 4:F-P semiconductor laser, 5: temperature controller, 6: left side optical circulator, 7: the right optical circulator, 8: fiber grating, 9: fiber coupler, 10: left side optical fiber polarization controller, 11: the right optical fiber polarization controller, 12: the left side is built-in with the dfb semiconductor laser of optical isolator, and 13: left side temperature controller, 14: the right is built-in with the dfb semiconductor laser of optical isolator, and 15: the right temperature controller.
The structural representation of the generation device execution mode two of Fig. 2, low dithering dual wavelength ultrashort light pulse of the present invention: 1: direct current biasing source, 2: signal source, 3:T type connector, the 4:F-P semiconductor laser, 5: temperature controller, 6: fiber coupler, 7,8,10: fiber grating, 9: optical circulator.
Embodiment
Execution mode one: direct current biasing source 1 utilizes an end to be connected with t connector 3 for the flexible cable of the long 10cm of SMA (male), and the bandwidth of t connector 3 is that 5GHz, link are SMA (female); Signal source 2 utilizes two ends to be connected with t connector 3 for the semi-rigid high frequency cable of the long 6cm of SMA (male); F-P semiconductor laser 4 is the multiple die semiconductor laser of modulation bandwidth 2.5GHz, centre wavelength 1550nm, longitudinal mode spacing 1.0nm, built-in refrigerator, no built in light isolator, and its pin is welded on the t connector 3; Temperature controller 5 is close proximity to below and its welding of F-P semiconductor laser 4; The output tail optical fiber of F-P semiconductor laser 4 is connected with the II end of optical circulator 6 by the FC/PC adpting flange; The III end of optical circulator 6 utilizes long 0.5m optical patchcord to be connected with the I end of optical circulator 7; The II end of optical circulator 7 utilizes the FC/PC adpting flange to be connected with the I end of fiber grating 8; The I end of optical circulator 6 utilizes the FC/PC adpting flange to link to each other with fiber coupler 9; Optical fiber polarization controller 10,11 places the centre of dfb semiconductor laser 12,14 and fiber coupler 9 respectively, interconnect by optical patchcord, dfb semiconductor laser 12,14 is the quantum well single mode semiconductor laser of centre wavelength 1550nm, built-in refrigerator, built in light isolator; Temperature controller 13,15 is welded on respectively on the dfb semiconductor laser 12,14.
Direct current biasing source 1 and signal source 2 drive F-P semiconductor laser 4 by t connector 3 and produce the pulse of gain switch semiconductor laser, and temperature controller 5 is used for controlling the working temperature of F-P semiconductor laser 4; Two dfb semiconductor lasers 12,14 are as injecting the light seed source, utilize two temperature controllers 13,15 to control both working temperatures respectively, the output wavelength of regulating them approaches the corresponding longitudinal mode of main laser 4, optical fiber polarization controller 10,11 is used for regulating the polarization state that injects the light seed, injects the I end of optical circulator 6 through fiber coupler 9 back seed light; After seed light is injected main laser 4, realize that simultaneously wavelength is selected and two functions of reduction light pulse shake, hold the ultrashort light pulse of output low dithering dual wavelength from the III of optical circulator 6; The I end of optical circulator 7 is injected in light pulse, incide in the fiber grating 8 through the II of optical circulator 7 end, a certain wavelength reflection in 8 pairs of dual wavelengths of fiber grating and to another wavelength transmission, the wavelength of transmission brings out from the II of fiber grating 8 and penetrates, and the wavelength of reflection brings out from its III through the input of the II of optical circulator 7 end and penetrates, and the dual wavelength of light pulse is effectively separated; Can regulate its output wavelength by the working temperature that changes seed source dfb semiconductor laser, can select the different mode output of main laser 4 like this, thereby realize the tunable output of dual wavelength.The advantage of the generation device of this low dithering dual wavelength ultrashort light pulse is that output is stable, side mode suppression ratio is big, time jitter is little,, full optical fiber optical optical line structure irrelevant with light pulse repetition rate, be easy to realize etc.
Execution mode two: direct current biasing source 1 utilizes an end to be connected with t connector 3 for the flexible cable of the long 8cm of SMA (male), and the bandwidth of t connector 3 is that 4.5GHz, link are SMA (female); Signal source 2 utilizes two ends to be connected with t connector 3 for the rigidity high frequency cable of the long 5cm of SMA (male); F-P semiconductor laser 4 is the multiple die semiconductor laser of modulation bandwidth 2.0GHz, centre wavelength 1555nm, longitudinal mode spacing 0.8nm, built-in refrigerator, no built in light isolator, and its pin is welded on the t connector 3; Temperature controller 5 is close proximity to below and its welding of F-P semiconductor laser 4; The output tail optical fiber of F-P semiconductor laser 4 is connected with fiber coupler 6 by the FC/PC adpting flange; The other two ends of fiber coupler 6 are connected with the I end of fiber grating 7 and optical circulator 9 respectively; Fiber grating 7 utilizes the FC/PC flange to be connected in series with fiber grating 8; The II end of optical circulator 9 is connected with the I end of fiber grating 10, and fiber grating 10 is a certain longitudinal mode wavelength reflection to F-P semiconductor laser 4, the Fiber Bragg Grating FBG of another longitudinal mode wavelength transmission.
Direct current biasing source 1 and signal source 2 drive a F-P semiconductor laser 4 by t connector 3 and produce the pulse of gain switch semiconductor laser, and temperature controller 5 is used for controlling the working temperature of F-P semiconductor laser 4; Light pulse divides two-way output through fiber coupler 6 backs, wherein one the tunnel incide in fiber grating 7 and the fiber grating 8, two fiber gratings reflect certain two longitudinal mode wavelength of main laser 4 respectively, the light pulse of two wavelength that are reflected becomes from seed source, be injected in the main laser 4 by fiber coupler 6, thereby realization injection locking selects wavelength output also to reduce the time jitter of light pulse simultaneously in main laser 4; The dual wavelength light pulse of output through optical circulator 9 II end incide in the fiber grating 10, a certain wavelength reflection in 10 pairs of dual wavelengths of fiber grating and to another wavelength transmission, the wavelength of transmission brings out from the II of fiber grating 10 and penetrates, and the wavelength of reflection brings out from its III through the input of the II of optical circulator 9 end and penetrates, and the dual wavelength of light pulse is effectively separated like this.The advantage of the generation device of this low dithering dual wavelength ultrashort light pulse be simple in structure, time jitter is low, the full optical fiber optical optical line structure, can realize integrated etc.
Claims (1)
1, a kind of generation device of low dithering dual wavelength ultrashort light pulse is characterized in that: be made up of main laser system, external seed source injected system and light pulse dual wavelength piece-rate system; The main laser system is made up of direct current biasing source (1), signal source (2), t connector (3), F-P semiconductor laser (4) and temperature controller (5), direct current biasing source (1) and signal source (2) are connected on the t connector (3) by the high frequency cable of 5-10cm, F-P semiconductor laser (4) is welded on the t connector (3), the respective pins welding of the output circuit of temperature controller (5) and F-P semiconductor laser (4); External seed source injected system is by left side optical circulator (6), fiber coupler (9), left side optical fiber polarization controller (10) and the right optical fiber polarization controller (11), the left side is built-in with the dfb semiconductor laser (12) of optical isolator and the dfb semiconductor laser (14) that the right is built-in with optical isolator, left side temperature controller (13) and the right temperature controller (15) are formed, utilize left side temperature controller (13) and the right temperature controller (15) to control the working temperature that the left side is built-in with the dfb semiconductor laser (12) and the dfb semiconductor laser (14) that the right is built-in with optical isolator of optical isolator respectively, the output wavelength of regulating them approaches the corresponding longitudinal mode of F-P semiconductor laser (4), left side optical circulator (6) utilizes the FC/PC optical patchcord to be connected with fiber coupler (9), the output of left side optical fiber polarization controller (10) and the right optical fiber polarization controller (11) is FC/PC, one end of left side optical fiber polarization controller (10) connects fiber coupler (9), the other end is connected with the tail optical fiber that the left side is built-in with the dfb semiconductor laser (12) of optical isolator, one end of the right optical fiber polarization controller (11) connects fiber coupler (9), the other end connects the dfb semiconductor laser (14) that the right is built-in with optical isolator, and left side temperature controller (13) and the right temperature controller (15) are built-in with the dfb semiconductor laser (12) of optical isolator with the left side respectively and dfb semiconductor laser (14) that the right is built-in with optical isolator welds; Dual wavelength light pulse piece-rate system is made up of the right optical circulator (7) and fiber grating (8), and the II end reflection end of the right optical circulator (7) utilizes the FC/PC optical patchcord to be connected with arbitrary end of fiber grating (8); Main laser system, external seed source injected system and light pulse dual wavelength piece-rate system are connected by ' T ' shape by three port left side optical circulators (6) in the injected system of external seed source, the fiber coupler (9) of external seed source injected system utilizes the FC/PC adpting flange to connect the incident end of this optical circulator, the output tail optical fiber of the F-P semiconductor laser (4) of main laser system connects the reflection end of this optical circulator by the FC/PC adpting flange, and the incident end of the right optical circulator (7) of dual wavelength piece-rate system connects the exit end of this optical circulator.
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| CN101276982B (en) | 2007-03-28 | 2010-08-04 | 中国科学院西安光学精密机械研究所 | Method for generating ultra-short pulse of outer injection type gain switch laser |
| CN102244355A (en) * | 2011-06-13 | 2011-11-16 | 武汉安扬激光技术有限责任公司 | Pulse-width-tunable gain-switch type picosecond pulse seed source |
| CN103743675B (en) * | 2013-12-30 | 2016-04-27 | 宁波大学 | For salimity measurement fibre-optical probe and use the measurement mechanism of this fibre-optical probe |
| CN103869576B (en) * | 2014-03-12 | 2016-08-24 | 杭州电子科技大学 | Based on erbium-doped nonlinear fiber grating from pulse generator |
| CN105242477B (en) * | 2015-11-11 | 2018-01-09 | 北方工业大学 | Pulsewidth and the adjustable rectangular light pulse synthesizer of amplitude |
| CN106058625A (en) * | 2016-05-26 | 2016-10-26 | 四川大学 | Picosecond laser system with self-injection frequency stabilization and pulse amplification functions |
| US11470227B2 (en) * | 2016-12-27 | 2022-10-11 | DePuy Synthes Products, Inc. | Systems, methods, and devices for providing illumination in an endoscopic imaging environment |
| CN108333691A (en) * | 2017-01-20 | 2018-07-27 | 山东华云光电技术有限公司 | A kind of Wavelength tunable single-fiber bidirectional optical transceiver module |
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