CN100544008C - Image module, video sensing device and manufacture method thereof - Google Patents
Image module, video sensing device and manufacture method thereof Download PDFInfo
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- CN100544008C CN100544008C CNB2006101595594A CN200610159559A CN100544008C CN 100544008 C CN100544008 C CN 100544008C CN B2006101595594 A CNB2006101595594 A CN B2006101595594A CN 200610159559 A CN200610159559 A CN 200610159559A CN 100544008 C CN100544008 C CN 100544008C
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Abstract
The present invention proposes a kind of video sensing device, its manufacture method and image extraction module thereof, can significantly improve the optical property of video sensing device.This video sensing device comprises a microprism, an intermediate layer, a lenticule, a photoreceptor and an IC stack layer.Wherein this microprism is in order to repair an incident angle of light, this lenticule is in order to increase collection efficiency, this intermediate layer is in order to separate this lenticule and this microprism to produce the refractive power effect, this photoreceptor carries out opto-electronic conversion in order to receive light, this IC stack layer is in order to carry out signal processing with photoelectric conversion signal, the structure of this kind video sensing device is utilized an ic manufacturing process and a long-pending bulk optics manufacture craft preparation.
Description
Technical field
The present invention relates to a kind of about microelectronic photovoltaic, particularly a kind of structure and stacking method thereof about microelectronic video sensing device.
Background technology
The structure of ■ image sensor
Along with making rapid progress of photovoltaic, the demand of image sensor is constantly increased.And general image sensor is divided into two big classes at present, be CCD (Charge Coupled Device, charge coupled cell) image sensor and CMOS (Complementary Metal-Oxide Semiconductor, complementary matal-oxide semiconductor) image sensor.
One image sensor is used to write down the light variation of an image, changes light into electronic signal again, after its processed chip record and the deciphering, is reduced to image more again and is exported, reappears or store.This image sensor is to be combined by numerous a plurality of photo-sensitive cells, and this photo-sensitive cell is formed by CCD or CMOS usually.
CCD is a kind of MOS (Metal Oxide Semiconductor, metal-oxide semiconductor (MOS)) capacitor array of solid matter, utilizes the principle work of vancancy-trapped electron.Its preparation method is first construction one silicon dioxide layer on a N type (P type also can) free from admixture monocrystalline silicon piece, accept a PN type mos capacitance structure of photon radiation again in this silicon dioxide layer top construction one deck, this mos capacitance structure is responsible for light is converted to electronic signal, as photodiode.This mos capacitance array periphery then disposes insulating barrier and signal circuit, forms the CCD unit of tight distribution on monocrystalline silicon piece at last, adds power configuration again and utilizes ic manufacturing process to be prepared, and just finishes a CCD photo-sensitive cell.
But CMOS is the semiconductor that a kind of writing light beam changes, its main material is silicon (Si) and two kinds of elements of germanium (Ge), make the semiconductor of its on CMOS, coexisting N level (electronegative) and P level (positively charged), these two semiconductors are because of electric current that complementary effect produced, processed chip record and understand after, present in the mode of image again again or export.The unique difference of CCD and CMOS is exactly that CCD is formed on the semiconductor monocrystal silicon materials, and CMOS is formed on the semi-conducting material of metal oxide, but both operation principles are identical basically.
Can respond to and export a chromatic image in order to make image sensor, basically this image sensor above-mentionedly can carry out the semiconductor photosensitive element of opto-electronic conversion except comprising, also need have a plurality of color filter discs (color filter), normally the form with array (array) exists.Color filter disc array is selected a group in two three primary colors groups (three-color primary configuration) usually, the rgb color filter array that known employing red (R), green (G), blue (B) are formed, or yellow (Y), red (magenta, M), green (cyan, the YMC color filter array of C) being formed one of them.
In known technology, semiconductor photosensitive element places color filter array below, color filter array top then is provided with a plurality of lenticules, be generally convex lens, utilize the characteristic of convex lens optically focused, incident ray is restrained, focused on, and be projected to semiconductor photosensitive element, described a plurality of lenticules can dwindle light optically focused and be projected on the littler optical sensor of area to increase the light sensitivity of image sensor integral body.So known image sensor, no matter adopt CCD semiconductor photosensitive element or cmos semiconductor photo-sensitive cell, its overall structure can roughly be divided into three parts that comprise a plurality of lenticules, a color filter array and semiconductor photo-sensitive cell if arrange according to the light incident direction.
Below introduce a kind of known CMOS image sensor.See also Fig. 1, it is the known configurations schematic diagram of CMOS photo-sensitive cell.CMOS photo-sensitive cell 10 among Fig. 1 comprises a basic unit 11, one first light sensitive diode 12a, one second light sensitive diode 12b, one the 3rd light sensitive diode 12c, a metal light non-transmittable layers 13, one first color filtration layer 14a, one second color filtration layer 14b, one the 3rd color filtration layer 14c, a microlens layer 15.Also show a light beam 16 among Fig. 1.Wherein this first color filtration layer 14a is usually in order to filter green glow.This second color filtration layer 14b is usually in order to filter ruddiness.The 3rd color filtration layer 14c is usually in order to filter blue light.
A common photo-sensitive cell is called pixel (pixel), no matter it is CCD or CMOS material, and numerous a plurality of pixels promptly constitute an image sensor, and an image sensor normally is made of up to a million pixels.For an image sensor, what of contained pixel have great influence to the image quality of this image sensor.Image sensor to a CCD type, the electronic signal that each pixel produced in each hurdle (column), to transfer in regular turn in the buffer (buffer), export to again and be positioned at other ADC (the Analog to Digital Converter of CCD, analog/digital converter) carries out the amplification of electronic signal and be converted to digital signal in the transducer, transfer to process chip again.But to a cmos type image sensor, the other ADC transducer that just directly connects of each pixel, the electronic signal that each pixel is produced is directly amplified and is converted to digital signal, and becomes image after being sent to the process chip deciphering.So the image sensor of CCD type and cmos type image sensor are maximum different structure, be the position and the quantity of ADC transducer.
See also Fig. 2, it is dot structure (pixel structure) schematic diagram of CMOS image sensor part, and a CMOS photo-sensitive cell and an ADC transducer constitute a pixel.CMOS image sensor 20 among Fig. 2 comprises a plurality of pixels 21, a CMOS photo-sensitive cell 22 and an ADC transducer 23.The other ADC transducer that just directly connects of each pixel of this cmos type image sensor, the electronic signal that each pixel is produced is directly amplified and is converted to digital signal, and becomes image after being sent to the process chip deciphering.
■ optics crosstalk effect, luminance difference and photo-sensitive cell layout uniformity
But no matter adopt above-mentioned any image sensor, it is the thorny problem that the image sensor developer endeavours to solve for a long time that the light that the optics crosstalk effect forms disturbs always.The optics crosstalk effect is meant, when a lenticule of a light beam incident pixel, if this beam angle departs from this lenticular normal, because its incidence angle is excessive, to such an extent as to this light beam is absorbed by the light sensitive diode of neighbor and produces optic interference, this kind phenomenon is called optics crosstalk effect (optical crosstalk).
See also Fig. 3, it is an optics crosstalk effect schematic diagram.At first, the known image sensor 30 of part comprises one first lenticule (micro lens) 31a, one second lenticule 31b, one the 3rd lenticule 31c, one first color filtration sheet 32a, one second color filtration sheet 32b, one the 3rd color filtration sheet 32c, a light shield 33 (light shield), an IC stack layer 34, one first light sensitive diode (photodiode) 35a, one second light sensitive diode 35b, one the 3rd light sensitive diode 35c among Fig. 3.Also show a vertical line 36, one first incident light 37a, one second incident light 37b, one first incidence angle 38a and one second incidence angle 38b among Fig. 3.Wherein this first incidence angle 38a is the angle of this first incident light 37a and this vertical line 36, and this second incidence angle 38b is the angle of this second incident light 37b and this vertical line 36.
Under the normal noiseless situation, the light beam through this second lenticule 31b should be absorbed by this second light sensitive diode 35b; And disturbance regime is, the light beam of this second lenticule of process 31b causes interference because incidence angle is crossed conference and absorbed by the adjacent light sensitive diode of this second light sensitive diode 35b.For this first incident light 37a, this first incident light 37a penetrates this second lenticule 31b, this second color filtration sheet 32b, this IC stack layer 34, and is absorbed by this second light sensitive diode 35b, belongs to normal noiseless situation.And this second incident light 37b, because incidence angle is excessive, just this second incidence angle 38b is greater than this first incidence angle 38a, therefore after this second incident light 37b penetrates this second lenticule 31b, this second color filtration sheet 32b, this IC stack layer 34, deviate to this first light sensitive diode 35a, and be absorbed, this just belongs to the situation that interference takes place, and is called as the optics crosstalk effect.
Be meant a light sensitive diode about luminance difference, need to receive light source from different angles, just this light sensitive diode need receive the incident light of different incidence angles, the incident light that incidence angle is more little, the optical pressure that forms on this light sensitive diode is strong more, and the big more incident light of incidence angle, formed optical pressure is weak more on this light sensitive diode, when light signal transfers electronic signal to, this optical pressure missionary society presents in the mode of light and shade, it is higher that optical pressure is got over strength brightness, and optical pressure weak more place brightness is lower, and this phenomenon is referred to as luminance difference.
Be meant ratio of the area between its CMOS photo-sensitive cell and the ADC transducer and layout type thereof between the pel array about photo-sensitive cell layout uniformity.See also Figure 11, Figure 11 is the even eccentric layout example vertical view of a photo-sensitive cell, the part of this even eccentric layout comprises a pixel 111 arrays, one CMOS light sensitive diode element, 112 arrays, one ADC transducer, 113 arrays, one lenticule, 114 arrays, wherein this photo-sensitive cell layout example adopts existing 0.35 μ m manufacture craft technology, this CMOS light sensitive diode element 112 is about 40%～60% with the area ratio of ADC transducer 113, this CMOS light sensitive diode element 112 is positioned at the below of this pixel 111 in this example, therefore the lenticule of institute's collocation design need be done even eccentric layout as shown in figure 11, the light that lenticule gathered can be imported on the diode, in 0.35 μ m manufacture craft technology, CMOS light sensitive diode element has the characteristic of periodic arrangement on the space.Yet, in 0.13 μ m manufacture craft technology, keep area and when improve the conversion of signals performance for asking, need with the ADC transducer as far as possible layout in one group, see also Figure 12, it is the inhomogeneous eccentric layout example vertical view of a photo-sensitive cell, the part of this inhomogeneous eccentric layout comprises a pixel 121 arrays, one CMOS light sensitive diode element, 122 arrays, one ADC transducer, 123 arrays, one lenticule, 124 arrays, wherein this photo-sensitive cell layout example adopts existing 0.13 μ m manufacture craft technology, this CMOS light sensitive diode element 122 is about 40%～60% with the area of this ADC transducer 123 than still, four one group of this pixel 121 formation are shared right in this example, therefore the lenticule of institute's collocation design need be done inhomogeneous eccentric layout as shown in figure 12, but lenticular overlap problem can take place.
For this optics crosstalk effect, luminance difference and with photo-sensitive cell layout uniformity, each big factory of tame image sensor manufacturing all is devoted to research and develop solution, to improve the quality of image that image sensor exported and to improve optical property.Therefore before the present invention, have two about the invention that improves image sensor image output quality, will be as the back division.
Prior art one: TW200525773 number TaiWan, China patent of invention
The purpose of this invention is to provide a zones of different on chip can obtain more between the image sensor of homogeneous light energy, particularly middle section and fringe region.Another purpose of this invention is to provide an image sensor of avoiding producing crosstalk phenomenon.
To achieve these goals, first embodiment of this invention designs an image sensor.One microlens layer comprises the lenticule of the corresponding a plurality of sensing areas of a plurality of difference, the lenticular function that is of a size of lenticule to chip center distance, and lenticular size increases with the increase of lenticule to chip center's distance, and the difference of therefore utilizing lenslet dimension is to solve the inhomogenous problem of zones of different incident light.
Second embodiment of this invention is as follows.Design an image sensor, one microlens layer comprises the lenticule of the corresponding a plurality of sensing areas of a plurality of difference, the distance at the center of corresponding sensing area with, one lenticule center is that a corresponding sensing area is as the function of a light sensitive diode to chip center's distance, promptly along with the increase of lenticule to chip center's distance, lenticule moves towards chip center.When lenticule moves, corresponding colored light-filtering units also moves to guarantee that incident light can not pass through adjacent color filter unit, thus, can improve the problem of heterogeneity incident light thereupon.
Second embodiment one has the sensor chip of 1284 * 1028 pixels.The width of each pixel is 4 microns, from chip center's fringe region farthest, its lens need move 2.1 microns, and according to the distance of lenticule to chip center's distance, pixel region is divided into 31 groups, group's 1 representative is positioned at the pixel group at chip center place, and group's 31 representatives are from the pixel group of chip center farthest.
See also Fig. 4, it is before lenticule, color filter unit and light-sensitive element are modified in first three group 1,2,3 among second embodiment and the Pareto diagram after modifying.The image sensor 41 of part comprises a lenticule 42, colored light-filtering units 43, an IC stack layer 44, a sensing area 45, a substrate 46, modifies back A, modifies preceding B, each lenticule center e and corresponding sensing area center f thereof among Fig. 4.
In the 1A of group, because of being positioned at the chip center place, so this lenticule 42, this colored light-filtering units 43 and this sensing area 45 are all kept same position.In the 2A of group, this lenticule 42 and this colored light-filtering units 43 move towards chip center with one 0.07 microns distance.This lenticule 42 center e be 0.07 micron to distance that should sensing area 45.Can analogize translation (shift) situation of other group with this rule, can improve the problem of heterogeneity incident light, but can't improve the light interference that the optics crosstalk effect is caused.
U.S.'s patent of invention of prior art two: US6803250 number
This invention is characterised in that: in a known image sensor, embed a concave mirror layer (concave lensing layer) in a lenticule and a light-sensing region, to improve the optical property of this image sensor.
See also Fig. 5, it is the invention representative graph of the prior art two.The image sensor 50 of part comprises a basic unit (substrate) 51 among Fig. 5, one light-sensing region (photoactive region) 52, one first dielectric substance layer (first planarizing passivation layer) 53, one first conductor layer (first conductorlayer) 54a, one first conductor layer (first conductor layer) 54b, one second dielectric substance layer (secondplanarizing passivation layer) 55, one second conductor layer (second conductor layer) 56a, one second conductor layer (second conductor layer) 56b, one first gap (first spacerlayer) 57, one color filter layer (color filter layer) 58, one second gap (second spacer layer) 59 and one lenticule (Microlens layer) 510.
This basic unit 51 is known base semiconductor among Fig. 5.This light-sensing region 52 is known light sensitive diode, and it is embedded in this basic unit 51.Embed a pair of this first conductor layer 54a, 54b in this first dielectric substance layer 53.Embed a pair of this second conductor layer 56a, 56b in this second dielectric substance layer 53.This second dielectric substance layer 55 is positioned on this first dielectric substance layer 53.This first dielectric substance layer 53 forms with the non-conductive material of this second dielectric substance layer 55 by light-permeable, is used to change the refraction angle of incident beam.This first dielectric substance layer 53 is formed by silica, silicon nitride or silicon oxynitride with this second dielectric substance layer 55.This first dielectric substance layer 53 is equal to the effect with concavees lens.This invention mainly utilizes this first dielectric substance layer 53 to change the refraction angle of incident beam with this second dielectric substance layer 55, but still can't eliminate optics crosstalk effect and luminance difference fully.
Therefore which kind of method no matter general known image sensor adopt, and still all can't eliminate optics crosstalk effect and luminance difference simultaneously, and therefore image sensor in the market still has very big room for improvement.
In view of the defective that is produced in the known technology, the applicant goes out the present invention's " image module, video sensing device and manufacture method thereof " through concentrated test with research idea, and it can overcome the known disadvantage of above-mentioned video sensing, below is brief description of the present invention.
Summary of the invention
The application proposes a kind of video sensing device, it utilizes a microprism, to have a incident angle of light than wide-angle, be trimmed to an incident angle of light of smaller angle, can eliminate luminance difference (shading) and excessive optics crosstalk effect that causes of incident key light angular variation and the uneven problem of solution photo-sensitive cell layout that incident key light angular variation causes.This video sensing device can significantly improve optical property.The structure of this video sensing device is utilized an ic manufacturing process and matrix optics manufacture craft preparation.
According to conception of the present invention, a kind of video sensing device has been proposed, in order to receive an incident light, this incident light has an incidence angle, and it comprises: an image sensor and a microprism.Wherein this image sensor is in order to be reduced to image with this incident light, and this microprism is in order to repair this incidence angle of this incident light.
Particularly, the invention provides a kind of such video sensing device, in order to receive incident light, the structure of described device comprises: a microprism, in order to be trimmed into shooting angle; One lenticule is in order to optically focused; One IC stack layer is in order to carry out signal processing with photoelectric conversion signal; And a photoreceptor, carry out opto-electronic conversion in order to receiving optical signals.
Preferably, this image sensor comprises in this video sensing device provided by the present invention: a lenticule, a photoreceptor and an IC stack layer.Wherein this lenticule in order to assemble this incident light, increases collection efficiency, this photoreceptor, and in order to receive this incident light and to carry out opto-electronic conversion, this IC stack layer is in order to carry out signal processing with photoelectric conversion signal.
Preferably, in this video sensing device provided by the present invention, this microprism will have this incidence angle than this incident light of wide-angle, be trimmed to this incidence angle of smaller angle.
Preferably, in this video sensing device provided by the present invention, this microprism is dielectric material or macromolecular material.
Preferably, in this video sensing device provided by the present invention, the width of this microprism, (wherein) size of magnitude is with the same magnitude of this photoreceptor for micro meter, μ m about several microns.
Preferably, in this video sensing device provided by the present invention, comprise an intermediate layer, produce preferable refractive power effect in order to separate lenticule and microprism.
Preferably, in this video sensing device provided by the present invention, this intermediate layer be silica, silicon nitride (, silicon oxynitride and macromolecular material one of them.
Preferably, in this video sensing device provided by the present invention, this intermediate layer comprises a plurality of clearance layer (spacer).
Preferably, in this video sensing device provided by the present invention, this intermediate layer comprises a plurality of color filter discs.
Preferably, in this video sensing device provided by the present invention, its permutation and combination method, comprise according to the arrangement of light incident direction: this IC stack layer is positioned at this photoreceptor upper strata; This lenticule is positioned at this IC stack layer upper strata, and this microprism is positioned at this lenticule upper strata.
Preferably, in this video sensing device provided by the present invention, its permutation and combination method, arrange according to the light incident direction, and comprise: this IC stack layer is positioned at this photoreceptor upper strata; This microprism is positioned at this IC stack layer upper strata; This intermediate layer is positioned at the microprism upper strata; This lenticule is positioned at this upper strata, intermediate layer.
Preferably, in this video sensing device provided by the present invention, its permutation and combination method, comprise according to the arrangement of light incident direction: this IC stack layer is positioned at this photoreceptor upper strata, this lenticule, be positioned at this IC stack layer upper strata, this intermediate layer is positioned at this lenticule upper strata, this microprism is positioned at this upper strata, intermediate layer.
Preferably, in this video sensing device provided by the present invention, it is characterized in that effectively reducing luminance difference and optics crosstalk effect.
According to conception of the present invention, a kind of manufacture method of video sensing device is proposed, comprise following stacking procedure: provide a basic unit; Prepare a photoreceptor with ic manufacturing process; Prepare an IC stack layer with ic manufacturing process; Prepare a lenticule with long-pending bulk optics manufacture craft; Reach with long-pending bulk optics manufacture craft and prepare a microprism.
Particularly, the manufacture method of this video sensing device comprises following stacking procedure: a basic unit is provided; In this basic unit, prepare a photoreceptor with ic manufacturing process; On this photoreceptor, prepare an IC stack layer with ic manufacturing process; On this IC stack layer, prepare a lenticule with long-pending bulk optics manufacture craft; And on this lenticule, prepare a microprism with long-pending bulk optics manufacture craft.
According to conception of the present invention, a kind of manufacture method of video sensing device is proposed, comprise following stacking procedure: provide a basic unit; Prepare a photoreceptor with ic manufacturing process; Prepare an IC stack layer with ic manufacturing process; Prepare a microprism with long-pending bulk optics manufacture craft; Prepare an intermediate layer with long-pending bulk optics manufacture craft; Reach with long-pending bulk optics manufacture craft and prepare a lenticule.
Particularly, the manufacture method of this video sensing device comprises following stacking procedure: a basic unit is provided; In this basic unit, prepare a photoreceptor with ic manufacturing process; On this photoreceptor, prepare an IC stack layer with ic manufacturing process; On this IC stack layer, prepare a microprism with long-pending bulk optics manufacture craft; On this microprism, prepare an intermediate layer with long-pending bulk optics manufacture craft; And on this intermediate layer, prepare a lenticule with long-pending bulk optics manufacture craft.
According to conception of the present invention, a kind of manufacture method of video sensing device is proposed, comprise following stacking procedure: provide a basic unit; Prepare a photoreceptor with ic manufacturing process; Prepare an IC stack layer with ic manufacturing process; Prepare a lenticule with long-pending bulk optics manufacture craft; Prepare an intermediate layer with long-pending bulk optics manufacture craft; Reach with long-pending bulk optics manufacture craft and prepare a microprism.
Particularly, the manufacture method of this video sensing device comprises following stacking procedure: a basic unit is provided; In this basic unit, prepare a photoreceptor with ic manufacturing process; On this photoreceptor, prepare an IC stack layer with ic manufacturing process; On this IC stack layer, prepare a lenticule with long-pending bulk optics manufacture craft; On this lenticule, prepare an intermediate layer with long-pending bulk optics manufacture craft; And on this intermediate layer, prepare a microprism with long-pending bulk optics manufacture craft.Preferably, in this video sensing device provided by the present invention, this basic unit is a base semiconductor.
Preferably, in this video sensing device provided by the present invention, this microprism is formed by lighttight dielectric material.
Preferably, in this video sensing device provided by the present invention, this microprism utilizes gray-level mask (gray mask) manufacture craft, photoresist layer (photoresist) manufacture craft and one of them preparation of etching process.
Preferably, in this video sensing device provided by the present invention, this intermediate layer utilizes plasma auxiliary chemical vapor deposition (Plasma Enhanced Chemical Vapor Deposition, PECVD) manufacture craft, cvd silicon oxide, silicon nitride, with silicon oxynitride one of them and form.
Preferably, in this video sensing device provided by the present invention, this intermediate layer is formed by macromolecular material (high polymer material).
Preferably, in this video sensing device provided by the present invention, this intermediate layer is formed by the gap.
Preferably, in this video sensing device provided by the present invention, this intermediate layer is formed by the gap.
According to technical conceive of the present invention, the present invention also provides a kind of image module, includes: an imaging lens group, in order to being the image space image with the object space video conversion; And an image sensor, in order to image space image light signal is converted to the signal of telecommunication; Wherein this image sensor has microprism to repair different incident angle of light.
Video sensing device of the present invention, its manufacture method and image extraction module thereof, beam direction can be done a finishing eliminating luminance difference and the excessive optics crosstalk effect that causes of incident key light angular variation that incident key light angular variation is caused, and then effectively improve the quality of image that image sensor exports and improve optical property and solve the problem of the inhomogeneous off-centre of following optical inductor.
Description of drawings
Fig. 1 is the known configurations schematic diagram of a plurality of CMOS photo-sensitive cells.
Fig. 2 is the dot structure schematic diagram of CMOS image sensor part.
Fig. 3 is an optics crosstalk effect schematic diagram.
Fig. 4 is the invention representative graph of prior art one.
Fig. 5 is the invention representative graph of prior art two.
Fig. 6 utilizes the principle schematic at microprism finishing key light angle for the present invention.
Fig. 7 (a) is the schematic diagram of optics crosstalk effect when not adding microprism among the embodiment one.
Fig. 7 (b) is the schematic diagram at configuration microprism finishing key light angle among the embodiment one.
Fig. 8 (a) is the schematic diagram of optics crosstalk effect when not adding microprism among the embodiment two.
Fig. 8 (b) is the schematic diagram at configuration microprism finishing key light angle among the embodiment two.
Fig. 9 (a) is the schematic diagram of optics crosstalk effect when not adding microprism among the embodiment three.
Fig. 9 (b) is the schematic diagram at configuration microprism finishing key light angle among the embodiment three.
Figure 10 (a) is the schematic diagram of optics crosstalk effect when not adding microprism among the embodiment four.
Figure 10 (b) is the schematic diagram at configuration microprism finishing key light angle among the embodiment four.
Figure 11 is the vertical view of the even eccentric layout example of photo-sensitive cell.
Figure 12 is the vertical view of the inhomogeneous eccentric layout example of photo-sensitive cell.
Figure 13 is the end view that the image module of image sensor and the imaging lens group of configuration microprism among the embodiment five is arranged in pairs or groups.
Figure 14 is the vertical view that the image module of image sensor and the imaging lens group of configuration microprism among the embodiment six is arranged in pairs or groups.
Figure 15 (a) reaches and (b) is vertical view and the profile of the present invention as the low-light grid structure of equivalent microprism.
It (d) is the schematic diagram that configuration low-light grid structure is arranged in pairs or groups as the image sensor module of equivalent microprism among the embodiment seven that Figure 15 (c) reaches.
Wherein, description of reference numerals is as follows:
10:CMOS photo-sensitive cell 11: basic unit
12a: the first light sensitive diode 12b: second light sensitive diode
12c: the 3rd light sensitive diode 13: metal light non-transmittable layers
14a: the first color filtration layer 14b: the second color filtration layer
14c: the 3rd color filtration layer 15: microlens layer
16: light beam 20:CMOS image sensor
21: a plurality of pixel 22:CMOS photo-sensitive cells
23:ADC transducer 30: known image sensor part
31a: the first lenticule 31b: second lenticule
31c: the 3rd lenticule 32a: the first color filtration sheet
32b: the second color filtration sheet 32c: the 3rd color filtration sheet
33: light shield 34:IC stack layer
35a: the first light sensitive diode 35b: second light sensitive diode
35c: the 3rd light sensitive diode 36: vertical line
37a: the first incident light 37b: second incident light
38a: the first incidence angle 38b: second incidence angle
41: image sensor part 42: lenticule
43: colored light-filtering units 44:IC stack layer
45: sensing area 46: substrate
50: image sensor part 51: basic unit
52: 53: the first dielectric substance layers of light-sensing region
54a: the first conductor layer 54b: first conductor layer
55: the second dielectric substance layer 56a: second conductor layer
56b: 57: the first gaps of second conductor layer
58: 59: the second gaps of color filter layer
510: lenticule 61: medium
62: microprism 63: the prisms tilted angle
64: plane of incidence 64a: plane of incidence normal
65: exit facet 65a: the exit facet normal
66x: first length of side 66y: second length of side
66z: the 3rd length of side 67a: incident beam
67b: outgoing beam 68a: first angle
69a: the first key light angle 610: photoreceptor
70: basic unit 71: photoreceptor
72:IC stack layer 73: intermediate layer
74: lenticule 75: microprism
76: low-angle key light angle 77: wide-angle key light angle
78a: first length of side 78b: second length of side
80: basic unit 81: photoreceptor
82:IC stack layer 83: intermediate layer
84: lenticule 85: microprism
86: low-angle key light angle 87: wide-angle key light angle
88a: first length of side 88b: second length of side
90: basic unit 91: photoreceptor
92:IC stack layer 93: microprism
94: intermediate layer 95: microprism
96: low-angle key light angle 97: wide-angle key light angle
98a: first length of side 98b: second length of side
100: basic unit 101: photoreceptor
102:IC stack layer 103: intermediate layer
104: lenticule 105: microprism
106: low-angle key light angle 107: wide-angle key light angle
108a: first length of side 108b: second length of side
111: pixel 112:CMOS light sensitive diode element
113:ADC transducer 114: lenticule
121: pixel 122:CMOS light sensitive diode element
123:ADC transducer 124: lenticule
131: a plurality of microprisms 132: a plurality of lenticules
133: a plurality of photoreceptors 134: lens imaging mirror group
141: a plurality of pixels 142: a plurality of microprisms
143: a plurality of lenticules 144: a plurality of photoreceptors
160: image induction module 161: photo-sensitive cell
162: incident ray 163: equivalent micro-prism structure
Embodiment
The present invention can fully be understood by following embodiment explanation, make those skilled in the art to finish it according to this, yet enforcement of the present invention is not to limit its scope of patent protection by the following example.
■ implements principle
In a video sensing device, to each pixel arrangement one microprism (micro prism), use and produce the natural law of refraction when light beam passes different medium, adjust the light beam direct of travel, the bigger key light angle (chief ray angle) of script is trimmed to less key light angle, effectively reduces the optics crosstalk effect between the pixel.
See also Fig. 6, it utilizes the principle schematic at microprism finishing key light angle for the present invention.One medium 61, a microprism 62, a prisms tilted angle 63, a plane of incidence (entrance plane) 64, one plane of incidence normal 64a, an exit facet (exit plane) 65, one exit facet normal 65a, one first length of side 66x, one second length of side 66y, one the 3rd length of side 66z, an incident beam 67a, an outgoing beam 67b, one first angle 68a, one first key light angle 69a and a photoreceptor 610 have been shown among Fig. 6.
The a plurality of parameters that are defined as follows again:
α: this plane of incidence 64 of this microprism 62 and the angle between the horizontal line are this prisms tilted angle 63.
φ
1: the angle between this incident beam 67a and the horizontal line is this first key light angle 69a.
φ
2: the angle between this outgoing beam 67b and the horizontal line is the second key light angle.
θ
1: this first angle 68a between this incident beam 67a and this plane of incidence normal 64a.
θ
2: second angle between this outgoing beam 67b and this plane of incidence normal 64a.
n
1: one first refractive index of this medium 61.
n
2: one second refractive index of this microprism 62.
α: this first length of side 66x.
B: this second length of side 66y.
P: the 3rd length of side 66z.
Described a plurality of parameter has following relation to exist each other:
θ
1=α+φ
1Formula two (a)
θ
2=α+φ
2Formula two (b)
Described a plurality of parameter must satisfy Snell's law (Snell ' s law), when this law was described light beam and passed different medium, the change of light beam direct of travel can change to some extent along with different refractivity that different medium had, this law is the inevitable outcome of a natural law, just
With formula two (a), (b) bring formula three into:
Formula four is expanded into
Usually, this microprism 62 is made by the dielectric material of light-permeable, and this medium 61 is an air or a low-index material, so n
2＜n
1, when advancing of light beam followed Snell's law so during the natural law, θ then
2＜θ
1, related φ
2＜φ
1So after these microprism 62 adjustment, this second key light angle will can be trimmed to bigger key light angle less key light angle less than this first key light angle 69a.Therefore can effectively reduce luminance difference and optics crosstalk effect.
The present invention is applicable to all types of video sensing devices, and usually, this type of video sensing device size is also little, so the 3rd length of side 66z of microprism 62 of the present invention, just the width of this microprism 62 is about a micron (micro meter, μ m, wherein μ=10
-6) size of magnitude.
Therefore, the ability at this microprism finishing key light angle of suitable utilization, the light interference that can effectively eliminate optics crosstalk effect and luminance difference and be brought.
■ embodiment one
See also Fig. 7 (a), it is the schematic diagram of optics crosstalk effect when not adding microprism among the embodiment one.See also Fig. 7 (b), it is the schematic diagram at configuration microprism finishing key light angle among the embodiment one.Among Fig. 7 (a) and Fig. 7 (b) basic unit 70, a photoreceptor 71, an IC stack layer 72, an intermediate layer 73, a lenticule 74, a microprism 75, the key light angle 76 of a low-angle (as 0 °), key light angle 77, one first length of side 78a and one second length of side 78b of a wide-angle (as 20 °) have been shown.
See also Fig. 7 (b), below the making of video sensing device of the present invention will be described with following stacking procedure.At first prepare this basic unit 70 with ic manufacturing process, prepare this photoreceptor 71 with ic manufacturing process again, it is positioned at this basic unit 70 tops, prepare this IC stack layer 72 with ic manufacturing process again, it is positioned at this photoreceptor 71 tops, prepare this intermediate layer 73 with ic manufacturing process again, it is positioned at this IC stack layer 72 tops, prepare this lenticule 74 with long-pending bulk optics manufacture craft again, it is positioned at this 73 tops, intermediate layer, prepare this microprism 75 with long-pending bulk optics manufacture craft again, it is positioned at this lenticule 74 tops.
The present invention is when running, and this first length of side and this second length of side via adjusting this microprism 55 make the key light angle 77 of this wide-angle (as 20 °) be trimmed to the key light angle 76 of this low-angle (as 0 °), realizes reducing the purpose of optics crosstalk effect thus.Present embodiment one can be implemented in present any image sensor structure easily.
■ embodiment two
See also Fig. 8 (a), it is the schematic diagram of optics crosstalk effect when not adding microprism among the embodiment two.See also Fig. 8 (b), it is the schematic diagram at configuration microprism finishing key light angle among the embodiment two.Among Fig. 8 (a) and Fig. 8 (b) basic unit 80, a photoreceptor 81, an IC stack layer 82, an intermediate layer 83, a microprism 84, a lenticule 85, the key light angle 86 of a low-angle (as 0 °), key light angle 87, one first length of side 88a and one second length of side 88b of a wide-angle (as 20 °) have been shown.
See also Fig. 8 (b), below the making of video sensing device of the present invention will be described with following stacking procedure.At first prepare this photoreceptor 81 with ic manufacturing process, prepare this IC stack layer 82 with ic manufacturing process again, it is positioned at this photoreceptor 81 tops, prepare this intermediate layer 83 with ic manufacturing process again, it is positioned at this IC stack layer 82 tops, prepares this microprism 84 with long-pending bulk optics manufacture craft again, and it is positioned at this 83 tops, intermediate layer, prepare this lenticule 85 with long-pending bulk optics manufacture craft again, it is positioned at this microprism 84 tops.Wherein can be designed to off-centre or non-eccentricity layout between microprism, lenticule and optical inductor to reach optimization.
The present invention is when running, via this first length of side height and this second length of side height of adjusting this microprism 84, make the key light angle 87 of this wide-angle (as 20 °) be trimmed to the key light angle 86 of this low-angle (as 0 °), realize reducing the purpose of optics crosstalk effect thus.Present embodiment two can be implemented in present any image sensor structure easily.
■ embodiment three
See also Fig. 9 (a), it is the schematic diagram of optics crosstalk effect when not adding microprism among the embodiment three.See also Fig. 9 (b), it is the schematic diagram at configuration microprism finishing key light angle among the embodiment three.Among Fig. 9 (a) and Fig. 9 (b) basic unit 90, a photoreceptor 91, an IC stack layer 92, a microprism 93, an intermediate layer 94, a lenticule 95, the key light angle 96 of a low-angle (as 0 °), key light angle 97, one first length of side 98a and one second length of side 98b of a wide-angle (as 20 °) have been shown.See also Fig. 9 (b), below the making of video sensing device of the present invention will be described with following stacking procedure.At first prepare this photoreceptor 91 with ic manufacturing process, prepare this IC stack layer 92 with ic manufacturing process again, it is positioned at this photoreceptor 91 tops, prepare this microprism 93 with long-pending bulk optics manufacture craft again, it is positioned at this IC stack layer 92 tops, prepares this intermediate layer 94 with ic manufacturing process again, and it is positioned at this microprism 93 tops, prepare this lenticule 95 with long-pending bulk optics manufacture craft again, it is positioned at this 94 tops, intermediate layer.
The present invention is when running, via this first length of side height and this second length of side height of adjusting this microprism 93, make the key light angle 97 of this wide-angle (as 20 °) be trimmed to the key light angle 96 of this low-angle (as 0 °), realize reducing the purpose of optics crosstalk effect thus.Present embodiment three can be implemented in present any image sensor structure easily.
■ embodiment four
See also Figure 10 (a), it is the schematic diagram of optics crosstalk effect when not adding microprism among the embodiment four.See also Figure 10 (b), it is the schematic diagram at configuration microprism finishing key light angle among the embodiment four.Among Figure 10 (a) and Figure 10 (b) basic unit 100, a photoreceptor 101, an IC stack layer 102, a lenticule 103, an intermediate layer 104, a microprism 105, the key light angle 106 of a low-angle (as 0 °), key light angle 107, one first length of side 108a and one second length of side 108b of a wide-angle (as 20 °) have been shown.
See also Figure 10 (b), below the making of video sensing device of the present invention will be described with following stacking procedure, at first prepare this photoreceptor 101 with ic manufacturing process, prepare this IC stack layer 102 with ic manufacturing process again, it is positioned at this photoreceptor 101 tops, prepare this intermediate layer 104 with long-pending bulk optics manufacture craft again, it is positioned at this IC stack layer 102 tops, prepare this lenticule 103 with the integrated circuit manufacture craft again, it is coated by this intermediate layer 104, prepare this microprism 105 with long-pending bulk optics manufacture craft again, it is positioned at this 104 tops, intermediate layer.
The present invention is when running, via this first length of side height and this second length of side height of adjusting this microprism 105, make the key light angle 107 of this wide-angle (as 20 °) be trimmed to the key light angle 106 of this low-angle (as 0 °), realize reducing the purpose of optics crosstalk effect thus.Present embodiment four can be implemented in present any image sensor structure easily.
In above-mentioned four embodiment, wherein said basic unit 70,80,90,100 adopts known base semiconductor.Described photoreceptor 71,81,91,101 are embedded in described basic unit 70,80,90,100, it is known light sensitive diode, carries out opto-electronic conversion in order to receive light, described photoreceptor 71,81,91,101 have multiple choices, its kenel is not to be restricted to certain specific known light sensitive diode, and needing only the photo-electric conversion element that meets with purposes can adopt.This IC stack layer 72,82,92,102 is piled up by metal material and forms, in order to photoelectric conversion signal is carried out signal processing.Described lenticule 74,85,95,103 is made by the dielectric material of light-permeable, is a convex lens form, utilizes the spotlight effect of convex lens, incident beam is concentrated, to increase collection efficiency.
Wherein said microprism 75,84,93,105 is in order to repair an incident angle of light.Described first length of side 78a of described microprism 75,84,93,105,88a, 98a, 108a and described second length of side 78b, 88b, 98b, 108b can adjust, along with the pixel at its place position with respect to this video sensing device, described first length of side 78a, 88a, 98a, 108a and described second length of side 78a, 88a, 98a, 108a has different sizes, and to repair an incident angle of light, its principle as described above.Described microprism 75,84,93,105 for utilizing one of them manufacture craft of gray-level mask (gray mask) manufacture craft, photoresist layer (photoresist) manufacture craft and etching, handle the dielectric material of light-permeables such as silica, silicon nitride or silicon oxynitride and make, and be a prism form.The material of described microprism 75,84,93,105 is not to be restricted to aforesaid material, as long as meet the material that promptly can be used as this microprism 75,84,93,105 with purposes.Described microprism 75,84,93,105 is characterised in that and can effectively reduces luminance difference and optics crosstalk effect.
Wherein said intermediate layer 73,83,94,104 utilize plasma auxiliary chemical vapor deposition (PlasmaEnhanced Chemical Vapor Deposition, PECVD) manufacture craft, transparent material such as cvd silicon oxide, silicon nitride or silicon oxynitride and forming.The material in described intermediate layer 73,83,94,104 is not to be restricted to aforesaid material, as long as meet the material that promptly can be used as described intermediate layer 73,83,94,104 with purposes.Described intermediate layer 73,83,94,104 also can be formed by macromolecular material or gap.Described intermediate layer 73,83,94,104 can be used for disposing a plurality of color filter discs, or promotes optical efficiency.Described intermediate layer 73,83,94,104 can be selected described intermediate layer 73,83,94,104 is set according to the needs on using, or described intermediate layer 73,83,94,104 is not set, and enforcement of the present invention is not to be limited its enforcement state by having or not of intermediate layer.
■ embodiment five
See also Figure 13, it is the end view that the image module of image sensor and the imaging lens group of configuration microprism among the embodiment five is arranged in pairs or groups.Image induction module 130 parts of Figure 13 comprise a plurality of microprisms 131, a plurality of lenticule 132, a plurality of photoreceptor 133, a lens imaging mirror group 134, and CRA (chiefray angle) expression is for the incident angle of light of each microprism.In Figure 13, in a CMOS video sensing device, adopt the execution mode of embodiment four, this CMOS video sensing device is added a plurality of microprisms to repair different incident angle of light, described different incident angle of light causes owing to object is different with the relative position of each photoreceptor, by finding out among Figure 13, after this different incident angle of light is repaired via described a plurality of microprisms 131, can be to spend near 0, Zui Jia angle just, be projected to this a plurality of photoreceptors 133, reach the luminance difference characteristic that significantly promotes the inductor edge so this image induction module 130 can significantly reduce the cross-talk at inductor edge.Therefore, by on each photoreceptor 133 of image induction module 130, adding the design of microprism 131, can eliminate the wide-angle variations at the key light angle that lens imaging mirror group 134 caused effectively.And the effect that the key light angle of being caused owing to lens imaging mirror group 134 changes can effectively be eliminated by microprism 131, therefore, the image induction module 130 of this microprism design of arranging in pairs or groups can advance one one be designed to small camera module (Compact Camera Module, CCM).In this small camera module, microprism can adopt discrete type layout as shown in figure 13, leaves the space between promptly adjacent microprism, or adopts the continous way layout, that is to say between adjacent microprism not interspace.
■ embodiment six
See also Figure 14, it is the vertical view that the image module of image sensor and the imaging lens group of configuration microprism among the embodiment six is arranged in pairs or groups.Image induction module 140 parts of Figure 14 comprise a plurality of pixel 141 arrays, a plurality of microprism 142 arrays, a plurality of lenticule 143 arrays, a plurality of photoreceptor 144 arrays.Wherein the image induction module among Figure 14 140 adds a plurality of microprism 142 arrays, in order to different incident light finishings is projected on a plurality of photoreceptors 144 arrays of inhomogeneous off-centre.The problem of inhomogeneous off-centre that the image sensor of being realized can solve following pixel when dwindling.
■ embodiment seven
See also Figure 15 (a) and Figure 15 (b), it represents the vertical view and the profile of the low-light grid structure of the aforesaid micro-prism structure of a kind of alternative the present invention respectively.As shown in FIG., this low-light grid structure 163 is to arrange by the micro-structural of making a rule and repeat on a specific region, with as an equivalent microprism (Effective Micro Prism) structure, reaches the purpose of adjusting incident ray key light angle.Please further consult Figure 15 (c), the 7th specific embodiment of the image induction module 160 of this equivalence micro-prism structure 163 of configuration among its expression the present invention.As shown in FIG., the key light angle of the incident ray 162 of this image induction module 160 of incident can produce the effect of angle adjustment through the effect of this equivalence micro-prism structure 163.The configuration of this equivalence micro-prism structure 163 in this image induction module 160, identical with the configuration mode of micro-prism structure among aforementioned each embodiment.In addition, in another preferred embodiment of Figure 15 (d) the design that is shown in, this low-light grid structure 163 can be configured on a plurality of photoreceptors 161 (a) and 161 (b) simultaneously, can reach the purpose of adjusting the key light angle equally.
Generally speaking, use this kind video sensing device, beam direction can be done a finishing eliminating luminance difference and the excessive optics crosstalk effect that causes of incident key light angular variation that incident key light angular variation is caused, and then effectively improve the quality of image that image sensor exports, improve optical property and solve the problem of the inhomogeneous off-centre of following optical inductor.The various modifications that those skilled in the art do according to technical conceive of the present invention all do not break away from the scope that claims institute desire is protected.
Claims (15)
1. video sensing device, in order to receive incident light, the structure of described video sensing device comprises:
One microprism is in order to be trimmed into shooting angle;
One lenticule is in order to optically focused;
One intermediate layer is in order to separate this lenticule and this microprism, to produce the refractive power effect;
One IC stack layer is in order to carry out signal processing with photoelectric conversion signal; And
One photoreceptor carries out opto-electronic conversion in order to receiving optical signals.
2. video sensing device as claimed in claim 1, wherein:
The incidence angle that this microprism will have than the incident light of wide-angle is trimmed to the incidence angle with smaller angle;
This microprism is made by dielectric material or macromolecular material; And/or
The width of this microprism is about number micron number magnitudes, and with the same magnitude of this photoreceptor.
3. video sensing device as claimed in claim 2, wherein:
One of them is made by silica, silicon nitride, silicon oxynitride and macromolecular material in this intermediate layer;
This intermediate layer comprises a plurality of clearance layer;
This intermediate layer comprises a plurality of color filter discs;
This video sensing device according to light incident direction permutation and combination is: this lenticule is positioned at this upper strata, intermediate layer; This intermediate layer is positioned at this microprism upper strata; This microprism is positioned at this IC stack layer upper strata; And this IC stack layer is positioned at this photoreceptor upper strata; Or
This video sensing device according to light incident direction permutation and combination is: this microprism is positioned at this lenticule upper strata; This lenticule is positioned at this IC stack layer upper strata; And this IC stack layer is positioned at this photoreceptor upper strata.
4. video sensing device as claimed in claim 1, wherein:
Adopt a non-eccentricity layout in the light incident direction between this microprism, this lenticule and this photoreceptor three; Or
Adopt an eccentric layout in the light incident direction between this microprism, this lenticule and this photoreceptor three.
5. video sensing device as claimed in claim 4, wherein: this off-centre layout comprises a regular eccentric layout and the eccentric layout of a non-rule.
6. video sensing device as claimed in claim 1, wherein: this video sensing device according to light incident direction permutation and combination is: this microprism is positioned at this lenticule upper strata; This lenticule is positioned at this IC stack layer upper strata; And this IC stack layer is positioned at this photoreceptor upper strata.
7. video sensing device as claimed in claim 1, wherein: this microprism is the equivalent microprism that a low-light grid structure is constituted.
8. the manufacture method of a video sensing device comprises following stacking procedure:
One basic unit is provided;
In this basic unit, prepare a photoreceptor with ic manufacturing process;
On this photoreceptor, prepare an IC stack layer with ic manufacturing process;
On this IC stack layer, prepare a microprism with long-pending bulk optics manufacture craft;
On this microprism, prepare an intermediate layer with long-pending bulk optics manufacture craft; And
On this intermediate layer, prepare a lenticule with long-pending bulk optics manufacture craft.
9. manufacture method as claimed in claim 8, wherein: this basic unit is a base semiconductor.
10. manufacture method as claimed in claim 8, wherein: this microprism is formed by a low-light grid structure and/or a dielectric material of printing opacity.
11. manufacture method as claimed in claim 8, wherein: this microprism utilizes gray-level mask manufacture craft, photoresist layer manufacture craft and one of them preparation of etching process.
12. manufacture method as claimed in claim 8, wherein:
This intermediate layer utilize plasma auxiliary chemical vapor deposition manufacture craft cvd silicon oxide, silicon nitride and silicon oxynitride one of them and form; Or
This intermediate layer is formed by macromolecular material.
13. an image module includes:
One imaging lens group is in order to being the image space image with the object space video conversion; And
One image sensor, in order to image space image light signal is converted to the signal of telecommunication, wherein this image sensor has microprism to repair different incident angle of light, and this image sensor comprises:
A plurality of lenticules in order to assemble this incident light, increase light gathering efficiency;
A plurality of microprisms are in order to repair the incident light of a plurality of angles;
A plurality of intermediate layers are in order to separate described a plurality of lenticule and described a plurality of microprism, to produce the refractive power effect;
A plurality of IC stack layers are in order to carry out signal processing with photoelectric conversion signal; And
A plurality of photoreceptors are in order to receive this incident light and to carry out opto-electronic conversion;
Wherein, this image sensor according to light incident direction permutation and combination is: described a plurality of lenticules are positioned at upper strata, described a plurality of intermediate layer; Described a plurality of intermediate layer is positioned at described a plurality of microprisms upper strata; Described a plurality of microprism is positioned at described a plurality of IC stack layers upper strata; And described a plurality of IC stack layers are positioned at described a plurality of photoreceptors upper strata; Or
This image sensor according to light incident direction permutation and combination is: described a plurality of microprisms are positioned at upper strata, described a plurality of intermediate layer; Described a plurality of intermediate layer is positioned at described a plurality of lenticules upper strata; Described a plurality of lenticule is positioned at described a plurality of IC stack layers upper strata; And described a plurality of IC stack layers are positioned at described a plurality of photoreceptors upper strata.
14. image module as claimed in claim 13, wherein:
The incidence angle that described a plurality of microprism will have than the incident light of wide-angle is trimmed to the incidence angle with smaller angle;
Described a plurality of microprism is dielectric material or macromolecular material;
The width of described a plurality of microprisms is about number micron number magnitude, with the same magnitude of this photoreceptor;
Adopt a non-eccentricity layout in the light incident direction between this microprism, this lenticule and this photoreceptor three; Perhaps
Adopt an eccentric layout in the light incident direction between this microprism, this lenticule and this photoreceptor three, wherein should the off-centre layout comprise a regular eccentric layout and the eccentric layout of a non-rule.
15. image module as claimed in claim 13, wherein:
Described a plurality of intermediate layer be silica, silicon nitride, silicon oxynitride and macromolecular material one of them;
Described a plurality of intermediate layer comprises a plurality of clearance layer;
Described a plurality of intermediate layer comprises a plurality of color filter discs.
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Effective date of registration: 20111025 Address after: Hsinchu City, Taiwan, China Co-patentee after: Omnivision Technologies, Inc. Patentee after: Caiyu Science-Technology Co., Ltd. Address before: Hsinchu City, Taiwan, China Patentee before: Caiyu Science-Technology Co., Ltd. |