CN100543932C - The analytical method of substrate board treatment and this device - Google Patents

The analytical method of substrate board treatment and this device Download PDF

Info

Publication number
CN100543932C
CN100543932C CNB2007101675381A CN200710167538A CN100543932C CN 100543932 C CN100543932 C CN 100543932C CN B2007101675381 A CNB2007101675381 A CN B2007101675381A CN 200710167538 A CN200710167538 A CN 200710167538A CN 100543932 C CN100543932 C CN 100543932C
Authority
CN
China
Prior art keywords
gas
reception room
analysis result
behind
board treatment
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CNB2007101675381A
Other languages
Chinese (zh)
Other versions
CN101179008A (en
Inventor
田中秀树
齐藤进
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Publication of CN101179008A publication Critical patent/CN101179008A/en
Application granted granted Critical
Publication of CN100543932C publication Critical patent/CN100543932C/en
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
    • H01L22/26—Acting in response to an ongoing measurement without interruption of processing, e.g. endpoint detection, in-situ thickness measurement

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Drying Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

The invention provides the analytical method of the substrate board treatment that can correctly detect the state in the reception room.In processing module (2), be determined at the luminous intensity (43) of the processing gas after the interior part of chamber is about to change the luminous intensity (42) of the preceding processing gas of preceding importing chamber and passes through in the chamber, after part has just been changed in chamber, import under the luminous intensity (44) of the processing gas before the chamber situation consistent with luminous intensity (42), measure the luminous intensity (45) of the processing gas after passing through in the chamber, calculate the variation (47) of this luminous intensity (45) and luminous intensity (43), after the plasma treatment to wafer (W) begins, measure the luminous intensity (48) of the processing gas after passing through in the chamber, remove the variation (47) of described luminous intensity among this luminous intensity (48), calculate the luminous intensity (49) of the state in the real reflection chamber (10), and detect the terminal point of plasma treatment by this luminous intensity (49).

Description

The analytical method of substrate board treatment and this device
Technical field
The present invention relates to the analytical method of substrate board treatment and this device, particularly relate to substrate board treatment with the state in the gas analyzing apparatus etc.
Background technology
On the substrate of semiconductor wafer etc., implement the substrate board treatment of plasma treatment, comprise the reception room (chamber) of accommodating substrate, on substrate, implement plasma treatment by the plasma that in this chamber, produces.On substrate, implement suitable plasma treatment, importantly the state in the detection chambers and the terminal point of plasma treatment.
Method as the terminal point of state in the detection chambers and plasma treatment, known have a following method: embedding on the sidewall of chamber has the window that is made of quartz glass, dispose plasma spectrum analysis device in the mode relative, by the luminescence of plasma (for example with reference to patent documentation 1) in this spectrum analysis device spectrum analysis chamber with this window.
Patent documentation 1: TOHKEMY 2004-319961 communique (paragraph 0038)
Summary of the invention
But there is the unclear situation that thickens as time goes by in the window of chamber.In addition, through also being necessary to change the photosensitive sensor with spectrum analysis device the service time of stipulating, there is individual difference in the transducer after changing preceding transducer and changing on photosensitive property.In the result of spectrum analysis device spectrum analysis, comprise the influence of replacing of smudgy and transducer of the window of these chambers.
In addition, if change part in the chamber, even identical with scheme (treatment conditions) before being about to change, also there are the different situation of state of the luminescence of plasma after the state of the luminescence of plasma before being about to change and the replacing just in for example shading ring and focusing ring.That is, exist luminescence of plasma because of the affected situation of the part exchanging in the chamber.Therefore, in the result of spectrum analysis device spectrum analysis, also comprise the influence of the part exchanging in the chamber.
More than, the result of spectrum analysis device spectrum analysis is not the state that reflects purely in the chamber, also reflect other change essential factor (replacing of smudgy, the transducer of the window of chamber or the influence of the part exchanging in the chamber), therefore can not correctly detect the state in the chamber.
The object of the present invention is to provide the substrate board treatment that can correctly detect the state in the reception room and the analytical method of this device.
In order to reach above-mentioned purpose, the substrate board treatment of first aspect present invention, it comprises reception room of accommodating substrate and the gas gatherer that imports gas in this reception room, above-mentioned reception room has the processing space of implementing predetermined process on aforesaid substrate with above-mentioned gas, the aforesaid substrate processing unit is characterised in that, comprising: analyze the preceding gas analyzing apparatus of the importing that imports the preceding gas of above-mentioned reception room; Analyze the back gas analyzing apparatus that passes through by the gas behind the above-mentioned processing space; With according to importing the gas analysis result before the above-mentioned reception room and detecting the state checking device of the state in the above-mentioned reception room by the gas analysis result behind the above-mentioned processing space.This state checking device, the gas analysis result who passes through behind the above-mentioned processing space before the processing of implementing afore mentioned rules on a plurality of aforesaid substrates is calculated the ratio that imports the gas analysis result before the above-mentioned reception room, the gas analysis result who passes through behind the above-mentioned processing space after the processing of implementing afore mentioned rules on a plurality of aforesaid substrates is calculated the ratio that imports the gas analysis result before the above-mentioned reception room, so that the identical mode of ratio after the ratio before the processing of implementing afore mentioned rules on above-mentioned a plurality of aforesaid substrates and the processing of on above-mentioned a plurality of aforesaid substrates, implementing afore mentioned rules, calculating is used for the gas analysis result who passes through behind the above-mentioned processing space after the processing of implementing afore mentioned rules on above-mentioned a plurality of aforesaid substrates is carried out correction analysis corrected value as a result, proofreaies and correct by the gas analysis result behind the above-mentioned processing space with this analysis result corrected value of calculating.
The substrate board treatment of second aspect present invention, it is characterized in that: in the substrate board treatment of first aspect present invention, above-mentioned state checking device is according to the above-mentioned corrected terminal point that detects the processing of afore mentioned rules by the gas analysis result behind the above-mentioned processing space.
The substrate board treatment of third aspect present invention, it is characterized in that: in the substrate board treatment of first aspect present invention or second aspect, have carrying out the gas extraction system of exhaust in the above-mentioned reception room, on above-mentioned gas extraction system, dispose above-mentioned by the back gas analyzing apparatus.
The substrate board treatment of fourth aspect present invention, it is characterized in that: in the substrate board treatment of third aspect present invention, above-mentioned reception room has the exhaustion plate that the plasma that prevents above-mentioned processing space flows out downstream, above-mentioned gas extraction system has the macromolecule vacuum pump, disposes above-mentioned by the back gas analyzing apparatus between above-mentioned exhaustion plate and above-mentioned macromolecule vacuum pump.
The substrate board treatment of fifth aspect present invention is characterized in that: in the substrate board treatment of first aspect present invention or second aspect, dispose above-mentioned by the back gas analyzing apparatus on above-mentioned reception room.
The substrate board treatment of sixth aspect present invention, it is characterized in that: in aspect first aspect present invention～5th in the substrate board treatment of either side, gas analyzing apparatus and above-mentioned at least one side by the back gas analyzing apparatus comprise before the above-mentioned importing: the gas of introducing gas is introduced the chamber; Introduce the indoor plasma generating device that makes plasma generation at this gas; To the luminous spectral photometry device that carries out beam split and measure luminous intensity by atom in the above-mentioned gas of above-mentioned plasma exciatiaon or molecule.
The substrate board treatment of seventh aspect present invention, it is characterized in that: in aspect first aspect present invention～5th in the substrate board treatment of either side, gas analyzing apparatus and above-mentioned at least one side by the back gas analyzing apparatus are mass analyzer before the above-mentioned importing.
The substrate board treatment of eighth aspect present invention, it is characterized in that: in aspect first aspect present invention～5th in the substrate board treatment of either side, gas analyzing apparatus and above-mentioned at least one side by the back gas analyzing apparatus are Fourier transform infrared spectrophotometer before the above-mentioned importing.
The substrate board treatment of ninth aspect present invention, it is characterized in that: in aspect first aspect present invention～5th in the substrate board treatment of either side, gas analyzing apparatus and above-mentioned at least one side by the back gas analyzing apparatus comprise before the above-mentioned importing: the flue that above-mentioned gas flows; In this flue, make the plasma generating device of plasma generation; The twilight sunset in the downstream of the plasma generation central part in the above-mentioned gas pipe is carried out beam split and measured the spectral photometry device of luminous intensity.
The substrate board treatment of tenth aspect present invention, it is characterized in that: in aspect first aspect present invention～9th in the substrate board treatment of either side, the aforesaid substrate processing unit with aforesaid substrate moved into the base board delivery device of taking out of to this substrate board treatment be connected, this base board delivery device has the gas analyzing apparatus of analyzing the gas in this base board delivery device.
The present invention the tenth substrate board treatment on the one hand, it is characterized in that: in the substrate board treatment of tenth aspect present invention, the aforesaid substrate carrying device has second gas extraction system of the gas in this base board delivery device being carried out exhaust, and the above-mentioned gas analytical equipment is configured on this second gas extraction system.
The substrate board treatment of the present invention the 12 aspect, it is characterized in that: in the substrate board treatment of tenth aspect present invention, the aforesaid substrate carrying device has second reception room of temporarily accommodating aforesaid substrate, and the above-mentioned gas analytical equipment is configured on above-mentioned second reception room.
In order to reach above-mentioned purpose, the substrate board treatment of the present invention the 13 aspect, it comprises reception room of accommodating substrate and the gas gatherer that imports gas in this reception room, above-mentioned reception room has the processing space of implementing predetermined process on aforesaid substrate with above-mentioned gas, the aforesaid substrate processing unit is characterised in that, comprising: analyze the preceding gas analyzing apparatus of the importing that imports the preceding gas of above-mentioned reception room; Analyze the back gas analyzing apparatus that passes through by the gas behind the above-mentioned processing space; With according to importing the gas analysis result before the above-mentioned reception room and detecting the state checking device of the state in the above-mentioned reception room by the gas analysis result behind the above-mentioned processing space.This state checking device, under the situation that gas analysis before the above-mentioned reception room of importing before and after the maintenance of above-mentioned reception room comes to the same thing, the variation of passing through the gas analysis result behind the above-mentioned processing space between calculating before and after the maintenance of above-mentioned reception room is proofreaied and correct by the gas analysis result behind the above-mentioned processing space with this variation of calculating.
The substrate board treatment of the present invention the 14 aspect is characterized in that: in the substrate board treatment aspect the present invention the 13, the dry-cleaning of part replacement, parts cleaning or above-mentioned reception room is equivalent to the maintenance of above-mentioned reception room.
In order to reach above-mentioned purpose, the analytical method of the substrate board treatment of the present invention the 15 aspect, the aforesaid substrate processing unit comprises reception room of accommodating substrate and the gas gatherer that imports gas in this reception room, above-mentioned reception room has the processing space of implementing predetermined process on aforesaid substrate with above-mentioned gas, above-mentioned analytical method is characterised in that, comprising: analyze the preceding gas analysis step of the importing that imports the preceding gas of above-mentioned reception room; Analyze the back gas analysis step of passing through by the gas behind the above-mentioned processing space; With according to importing the gas analysis result before the above-mentioned reception room and detecting step by the state that the gas analysis result behind the above-mentioned processing space detects the state in the above-mentioned reception room.This state detects step, the gas analysis result who passes through behind the above-mentioned processing space before the processing of implementing afore mentioned rules on a plurality of aforesaid substrates is calculated the ratio that imports the gas analysis result before the above-mentioned reception room, and the gas analysis result who passes through behind the above-mentioned processing space after the processing of implementing afore mentioned rules on a plurality of aforesaid substrates calculated the ratio that imports the gas analysis result before the above-mentioned reception room, so that the identical mode of ratio after the ratio before the processing of implementing afore mentioned rules on above-mentioned a plurality of aforesaid substrates and the processing of on above-mentioned a plurality of aforesaid substrates, implementing afore mentioned rules, calculating is used for the analysis result corrected value that the gas analysis result behind the above-mentioned processing space proofreaies and correct that passes through after the processing of implementing afore mentioned rules on above-mentioned a plurality of aforesaid substrates is proofreaied and correct by the gas analysis result behind the above-mentioned processing space with this analysis result corrected value of calculating.
The analytical method of the substrate board treatment of the present invention the 16 aspect, it is characterized in that: in the substrate board treatment aspect the present invention the 15, detect in the step at above-mentioned state, according to the above-mentioned corrected terminal point that detects the processing of afore mentioned rules by the gas analysis result behind the above-mentioned processing space.
In order to reach above-mentioned purpose, the analytical method of the substrate board treatment of the present invention the 17 aspect, the aforesaid substrate processing unit comprises reception room of accommodating substrate and the gas gatherer that imports gas in this reception room, above-mentioned reception room has the processing space of implementing predetermined process on aforesaid substrate with above-mentioned gas, above-mentioned analytical method is characterised in that, comprising: analyze the preceding analytical procedure of the importing that imports the preceding gas of above-mentioned reception room; Analyze the back gas analysis step of passing through by the gas behind the above-mentioned processing space; With according to importing the gas analysis result before the above-mentioned reception room and detecting step by the state that the gas analysis result behind the above-mentioned processing space detects the state in the above-mentioned reception room.Detect in the step at this state, under the situation that gas analysis before the above-mentioned reception room of importing before and after the maintenance of above-mentioned reception room comes to the same thing, the variation of passing through the gas analysis result behind the above-mentioned processing space between calculating before and after the maintenance of above-mentioned reception room is proofreaied and correct by the gas analysis result behind the above-mentioned processing space with this variation of calculating.
The analytical method of the substrate board treatment of the present invention's the tenth eight aspect is characterized in that: in the substrate board treatment aspect the present invention the 17, the dry-cleaning of part replacement, parts cleaning or above-mentioned reception room is equivalent to the maintenance of above-mentioned reception room.
Analytical method according to the substrate board treatment of the substrate board treatment of first aspect present invention and the present invention the 15 aspect, to on a plurality of substrates, implementing the gas analysis result that passing through before the predetermined process handle behind the space ratio that imports the gas analysis result before the reception room is calculated, and calculate on a plurality of substrates, implementing the ratio that passing through after the predetermined process handle gas analysis result behind the space gas analysis result before to the importing reception room, so that the ratio before implementing predetermined process on a plurality of substrates with on a plurality of substrates, implement predetermined process after the identical mode of ratio, calculating is used for implement the passing through analysis result corrected value that the gas analysis result behind the processing space proofreaies and correct after the predetermined process on a plurality of substrates, proofread and correct by the gas analysis result behind the processing space with this analysis result corrected value of calculating, detect the state in the reception room.The influence of the fluctuation of the gas of the influence of the deterioration of gas analyzing apparatus and importing is corresponding before the importing of the gas that the corrected value of analysis result is preceding with analyzing the importing reception room.Therefore, can from by handle remove the gas analysis result behind the space import before the influence of fluctuation of the influence of deterioration of gas analyzing apparatus and gas, can make the gas analysis result only reflect state in the reception room.Its result can correctly detect the state in the reception room.
According to the analytical method of the substrate board treatment of the substrate board treatment of second aspect present invention and the present invention the 16 aspect, according to corrected by handling the terminal point that gas analysis result behind the space detects predetermined process.Because correctedly only reflect state in the reception room, so can correctly detect the terminal point of predetermined process by handling gas analysis result behind the space.
According to the substrate board treatment of third aspect present invention, on the gas extraction system of the gas in the reception room being carried out exhaust, dispose by the back gas analyzing apparatus.Thus, can in reception room, isolate, thereby can prevent in the influence that is subjected to the predetermined process etc. in the reception room by the analyzing and processing of back in the gas analyzing apparatus by the back gas analyzing apparatus.
According to the substrate board treatment of fourth aspect present invention, dispose between exhaustion plate that the plasma in the processing space in preventing reception room flows out downstream and the macromolecule vacuum pump in the gas extraction system by the back gas analyzing apparatus.The macromolecule vacuum pump is in order to carry out exhaust, be necessary to supply with nitrogen to the downstream of this pump, but because be configured in the upstream of macromolecule vacuum pump by the back gas analyzing apparatus, so in by the gas analysis result after handling the space, do not reflect the influence of the nitrogen of supply, in addition because be configured in the downstream of exhaustion plate, so in by the gas analysis result after handling the space, do not reflect the influence of plasma by the back gas analyzing apparatus.Therefore, can more correctly detect the interior state of reception room.
According to the substrate board treatment of fifth aspect present invention, on reception room, dispose by the back gas analyzing apparatus.Thus, can easily introduce gas in the reception room by the back gas analyzing apparatus, its result can more easily detect the state in the reception room.
According to the substrate board treatment of sixth aspect present invention, the atom in the generation excited gas or the plasma of molecule carry out beam split and measure luminous intensity the luminous of atom in the gas that is excited by this plasma or molecule.Therefore, can measure the atomic concentration or the molecular concentration of gas from luminous intensity, thereby can correctly carry out gas analysis.
According to the substrate board treatment of seventh aspect present invention, can more correctly carry out gas analysis with mass analyzer.
According to the substrate board treatment of eighth aspect present invention, can more correctly carry out gas analysis with Fourier transform infrared spectrophotometer.
According to the substrate board treatment of ninth aspect present invention, the twilight sunset in the downstream of the plasma generation central part in the flue is carried out beam split and measured luminous intensity.Therefore, can correctly measure luminous intensity, and the introducing chamber of unnecessary introducing gas, therefore can carry out gas analysis with the structure of cheapness.
According to the substrate board treatment of tenth aspect present invention, analyze the gas in the base board delivery device that is connected with substrate board treatment, therefore can detect the state in the base board delivery device.
The substrate board treatment of the tenth one side disposes gas analyzing apparatus on second gas extraction system of the gas in the base board delivery device being carried out exhaust according to the present invention.Thus, gas analyzing apparatus can be isolated in base board delivery device, thereby can prevent that analyzing and processing in gas analyzing apparatus is to the influence in the substrate board treatment.
The substrate board treatment of the 12 aspect according to the present invention, gas analyzing apparatus are configured on second reception room of base board delivery device.Thus, gas analyzing apparatus can easily be introduced the gas in second reception room, and its result can easily detect the state in second reception room.
The analytical method of the substrate board treatment of the substrate board treatment of the 13 aspect and the present invention the 17 aspect according to the present invention, under the situation that gas analysis before the importing reception room before and after the maintenance of reception room comes to the same thing, passing through between before and after the maintenance of calculating reception room handled the variation of the gas analysis result behind the space, proofread and correct by the gas analysis result behind the processing space with this variation of calculating, detect the state in the reception room.Under the situation that gas analysis before the importing reception room before and after the maintenance of reception room comes to the same thing, the influence of the part exchanging that the variation that pass through between before and after the maintenance of reception room handled the gas analysis result behind the space and the replacing of transducer and reception room are interior is corresponding.Therefore, by proofreading and correct by the gas analysis result behind the processing space with the variation of calculating, can make the gas analysis result only reflect the state that reception room is interior, its result can correctly detect the state in the reception room.
Description of drawings
Fig. 1 is suitable for the sectional view of schematic configuration of the base plate processing system of the substrate board treatment that first execution mode of the present invention relates to for expression.
Fig. 2 is the ideograph that passing through in the presentation graphs 1 handled the schematic configuration of gas analysis unit behind the space etc.
Fig. 3 is the flow chart of the plasma treatment terminal point inspection method of the analytical method of the substrate board treatment that relates to as present embodiment.
Fig. 4 is the figure of bearing calibration of luminous intensity of the processing gas of the substrate board treatment that is used to illustrate that second execution mode of the present invention relates to, the figure of the change part that Fig. 4 (A) causes because of part exchanging in the chamber for the luminous intensity of the processing gas of expression by handling the space, Fig. 4 (B) use the figure of the luminous intensity of the processing gas after the correction that the change among Fig. 4 (A) partly obtains for expression.
Fig. 5 is the flow chart of the plasma treatment terminal point inspection method of the analytical method of the substrate board treatment that relates to as present embodiment.
Fig. 6 is the ideograph of schematic configuration of the variation of passing through to handle gas analysis unit behind the space etc. of presentation graphs 2.
Symbol description
S handles the space
The W wafer
1 base plate processing system
2 processing modules
5 load-lock modules (load lock module)
13 collector rings
14 manifolds (manifold)
16?TMP
23 handle gas introduction tube
32 load-lock module gas extraction system
34 by gas analysis unit behind the processing space
35 import preceding gas analysis unit
36 load-lock modular gas analytic units
37 secondary cavities
39 high frequency electric sources
40 observation windows
41 spectrum analysis devices
Embodiment
Below, with reference to accompanying drawing embodiments of the present invention are described.
At first, the base plate processing system that is suitable for the substrate board treatment that first execution mode of the present invention relates to is described.
Fig. 1 is suitable for the sectional view of schematic configuration of the base plate processing system of the substrate board treatment that present embodiment relates to for expression.
In Fig. 1, base plate processing system 1 comprises: to implement the processing module 2 (substrate board treatment) of various plasma treatment such as film forming processing, DIFFUSION TREATMENT, etch processes with wafer W (hereinafter to be referred as " wafer W ") monolithic ground as the semiconductor of substrate; From the wafer case 3 of the wafer W of holding regulation sheet number, take out the loading module (loader module) 4 of wafer W; And be configured between this loading module 4 and the processing module 2, from loading module 4 to processing module 2, perhaps from the load-lock module 5 (base board delivery device) of processing module 2 to loading module 4 conveyance wafer W.
But the inside of processing module 2 and load-lock module 5 is the structure of vacuum attraction, at ordinary times with the inner sustain of loading module 4 at atmospheric pressure.In addition, processing module 2 and load-lock module 5, and load-lock module 5 is connected by gate valve 6,7 respectively with loading module 4.In addition, the inside of the inside of load-lock module 5 and loading module 4, being communicated with communicating pipe 9 of the valve 8 by disposing freely openable on the way.
Processing module 2 has for example cylinder type chamber 10 (reception room) of aluminium or stainless steel of metallic, and in this chamber 10, for example disposing as the mounting diameter is the columniform pedestal 11 of mounting table of the wafer W of 300mm.
Between the sidewall and pedestal 11 of chamber 10, be formed with the stream of discharging to the outside of chamber 10 and the exhaust channel 12 that plays a role as the gas of the processing space S that will set forth later.In the way of this exhaust channel 12, dispose the collector ring 13 (exhaustion plate) of ring-type, as the manifold 14 in the space in the downstream of comparing with the collector ring 13 of exhaust channel 12, be communicated with automatic pressure control valve (Automatic Pressure Control Value) (following title " APC valve ") 15 as the type variable butterfly valve.APC valve 15 is connected with the turbomolecular pump (following title " TMP ") 16 of the exhaust pump of using as vacuum attraction.At this, collector ring 13 prevents that the plasma that produces from flowing out manifold 14 in handling space S.APC valve 15 carries out the pressure control in the chamber 10, and TMP16 is to reducing pressure in the chamber 10, is almost till the vacuum state.Manifold 14, APC valve 15 and TMP16 constitute the processing module gas extraction system.In this processing module gas extraction system, gas analysis unit 34 (by the back gas analyzing apparatus) after being connected with passing through of setting forth later on the manifold 14 to handle the space.
Be connected with high frequency electric source 17 by adaptation 18 on the pedestal 11, high frequency electric source 17 is to pedestal 11 supply high frequency electric power.Thus, pedestal 11 plays a role as lower electrode.In addition, the reflection that adaptation 18 reduces from the High frequency power of pedestal 11 makes the efficiency of supply maximum of this High frequency power to pedestal 11.
On pedestal 11, dispose the battery lead plate (not shown) that is used to utilize Coulomb force or Johnson-La Bieke (Johnsen-Rahbek) power absorption wafer W.Thus, wafer W be adsorbed remain on pedestal 11 above.In addition, dispose the circular focusing ring 19 that is made of silicon (Si) etc. on the top of pedestal 11, this focusing ring 19 makes the plasma that produces in the processing space S between the pedestal 11 and the shower nozzle 20 of setting forth later to the wafer W pinching.
In addition, be provided with the refrigerant chamber (not shown) of ring-type in the inside of pedestal 11.In this refrigerant chamber, the refrigerant of set point of temperature is supplied with in circulation, and cooling water for example utilizes the temperature of this refrigerant to adjust the treatment temperature of the wafer W on the pedestal 11.And, between wafer W and pedestal 11, supply with helium, this helium conducts to pedestal 11 with the heat of wafer W.
Be provided with discoideus shower nozzle 20 at the top of chamber 10.Shower nozzle 20 is connected with high frequency electric source 21 by adaptation 22, and high frequency electric source 21 is to shower nozzle 20 supply high frequency electric power.Thus, shower nozzle 20 plays a role as upper electrode.Wherein, the function of adaptation 22 is identical with the function of adaptation 18.
In addition, shower nozzle 20 is handled gas with supply, and for example the processing gas introduction tube 23 of the mist of the gas of the gas of CF system and other kinds is connected, and shower nozzle 20 will import to the processing space S from the processing gas that processing gas introduction tube 23 is supplied with.Gas analysis unit 35 before on this processing gas introduction tube 23, being connected with the importing of setting forth later (gas analyzing apparatus before importing).
In the processing space S in the chamber 10 of this processing module 2, the pedestal 11 and the shower nozzle 20 that are supplied to High frequency power apply High frequency power to handling space S, make to handle in the space S to produce highdensity plasma by handling gas.The plasma that produces by the surface of pinching in wafer W, for example carries out etching physics or chemistry to the surface of wafer W by focusing ring 19.
Loading module 4 has the wafer case mounting table 24 and the carrying room 25 of mounting wafer case 3.Wafer case 3 is multistage ground mounting and accommodate for example 25 wafer W equally spacedly.In addition, carrying room 25 is the case shape thing of cuboid, and portion has the carrying arm 26 of the stagewise (scalar type) of conveyance wafer W within it.
Carrying arm 26 has the carrying arm wrist 27 and the pick-up 28 that is installed in the front end of this carrying arm wrist 27 of the multi-joint shape of scalable formation, and this pick-up 28 constitutes in the mode of direct mounting wafer W.Carrying arm 26 constitutes with free rotation mode, and utilizes carrying arm wrist 27 free bends, therefore can be between wafer case 3 and load-lock module 5 conveyance freely be positioned in wafer W on the pick-up 28.
Load-lock module 5 comprises: dispose constitute flexible and rotate the chamber 30 of transporting arms 29 (second reception room) freely, to this chamber 30 in supply nitrogen nitrogen feed system 31 and to chamber 30 in carry out exhaust load-lock module gas extraction system 32.On this load-lock module gas extraction system 32, be connected with the load-lock modular gas analytic unit 36 (gas analyzing apparatus) of setting forth later.At this, transporting arms 29 is the carrying arm of the stagewise that is made of a plurality of wrists, and it has the pick-up 33 that is installed in its front end, and this pick-up 33 constitutes in the mode of direct mounting wafer W.
With wafer W from loading module 4 under the situation that processing module 2 is moved into, when opening gate valve 7, transporting arms 29 receives wafer W from the carrying arm 26 in the carrying room 25, when opening gate valve 6, transporting arms 29 enters in the chamber 10 of processing module 2, and wafer W is positioned on the pedestal 11.In addition, with wafer W from processing module 2 under the situation that loading module 4 is moved into, when opening gate valve 6, transporting arms 29 enters in the chamber 10 of processing module 2, receive wafer W from pedestal 11, when opening gate valve 7, the carrying arm 26 handing-over wafer W of transporting arms 29 in carrying room 25.
Computer (state checking device) (not shown) by the control device that possesses as base plate processing system 1 or as the external server (state checking device) (not shown) of the control device that is connected with base plate processing system 1 etc., the action of each inscape of processing module 2, loading module 4 and the load-lock module 5 of control formation base plate processing system 1.In addition, be connected with aforementioned calculation machine or external server with load-lock modular gas analytic unit 36 by gas analysis unit 35 before gas analysis unit 34, the importing behind the processing space.
Fig. 2 is the ideograph that passing through in the presentation graphs 1 handled the schematic configuration of gas analysis unit behind the space etc.Wherein, have identical structure with load-lock modular gas analytic unit 36, therefore below the structure that imports preceding gas analysis unit 35 is described by gas analysis unit 35 before gas analysis unit 34, the importing behind the processing space.
In Fig. 2, gas analysis unit 35 comprises before importing: the secondary cavity 37 (gas introducing chamber) of the processing gas that introducing flows through handles gas introduction tube 23, be wrapped in this secondary cavity 37 around coil 38, the high frequency electric source 39 (plasma generating device) that is connected with coil 38; Be embedded in the observation window 40 that constitutes by quartz glass on the wall of secondary cavity 37, supply with the gas supply device (not shown) of argon gas with the spectrum analysis device 41 (spectral photometry device) of these observation window 40 relative configurations, in secondary cavity 37 and carrying out the exhaust apparatus (not shown) of exhaust in the secondary cavity 37.
In the gas analysis unit 35, high frequency electric source 39 produces plasma in order to make in the secondary cavity 37, flow through high-frequency current in coil 38 before importing, and the argon gas in secondary cavity 37 produces plasma.Atom or molecule in the processing gas in the plasma exciatiaon secondary cavity 37 of this generation make atom or mulecular luminescence.Spectrum analysis device 41 is luminous across observation window 40 sensitization atoms or molecule, with this luminous beam split and measure atom or the luminous intensity of molecule, measures atomic concentration or the molecular concentration of handling gas based on the luminous intensity of this mensuration.That is, the preceding gas analysis unit 35 of importing is measured atomic concentration or the molecular concentration in the processing gas (importing the preceding gas of reception room) of handling gas introduction tube 23 of flowing through.
In addition, by gas analysis unit 34 and load-lock modular gas analytic unit 36 behind the processing space, owing to have the structure identical with importing preceding gas analysis unit 35, measure respectively by handling space S flow through atomic concentration or molecular concentration in the processing gas (by handling the gas behind the space) of manifold 14, measure atomic concentration or molecular concentration in the gas (gas in the base board delivery device) of the load-lock module gas extraction system 32 of flowing through.
Yet, in processing module 2, pass through to handle the processing gas of space S, according to the state of handling space S, so that the state in the chamber 10, certain specific gas (for example CF system gas) plasma and be consumed etc. changes the mass ratio etc. of all gases that constitutes this processing gas.Its result, the atomic concentration or the molecular concentration that constitute all gases in by the processing gas of handling space S also change.Therefore, by analyzing, can detect the state in the chamber 10 by the processing gas of handling space S and the concentration of measuring this processing gas.
But, if change the part (following title " part in the chamber ") that is configured in the chamber 10, even be identical plasma process conditions, also exist the plasmoid of handling space S to be different from part and be about to change preceding plasmoid, the situation that the consumption form of all gases changes.Therefore, even be identical plasma process conditions, after the preceding and firm replacing of part replacing soon, existence is by the atomic concentration of the processing gas of processing space S or the situation that molecular concentration changes in chamber.In other words, the atomic concentration of the processing gas by handling space S or molecular concentration are affected because of the replacing of part in the chamber.Its result in the luminous intensity of the processing gas that passes through the processing space S, comprises the influence of the replacing of part in the chamber by gas analysis unit 34 after handling the space.
In addition, by handling behind the space in the gas analysis unit 34,, in the whole plasma treatment of chamber 10, measure the atom of the processing gas by handling space S or the luminous intensity of molecule for the terminal point that detects plasma treatment etc.That is, be necessary to make for a long time to produce plasmas in the secondary cavity 37, therefore what are produced smudgy on observation window 40 by plasma etc.In addition, the transducer of spectrum analysis device 41 also was necessary to change after the service time through regulation.Therefore, by handling in the luminous intensity that gas analysis unit 34 is measured behind the space, comprise the influence of the smudgy and replacing sensor of observation window 40.
Then, in order correctly to detect the state in the chamber 10, remove the influence of smudgy and replacing sensor of replacing, the observation window 40 of part in the above-mentioned chamber among the luminous intensity that is necessary to measure from spectrum analysis device 41.
On the other hand, before importing in the gas analysis unit 35, because only be to detect the one-tenth that is imported into the processing gas of handling space S to grade, so only carry out the mensuration of the luminous intensity of short time.That is, the time that produces plasma in secondary cavity 37 is the short time, does not therefore exist through producing on observation window 40 for a long time smudgyly, also need not change the transducer of spectrum analysis device 41.Therefore, the luminous intensity that gas analysis unit 35 is measured before importing contains the influence of the smudgy and replacing sensor of observation window 40 hardly, can be through effectively utilizing as fiducial value for a long time.
In the substrate board treatment that present embodiment relates to, corresponding, with the luminous intensity of the processing gas of the gas coming through ingress pipe 23 of gas analysis unit 35 before the importing, proofread and correct luminous intensity by the processing gas that passes through the processing space S of gas analysis unit 34 behind the processing space.
At first, imagination is implemented continuously the situation of plasma treatment to a plurality of wafer W in chamber 10, and the bearing calibration of the luminous intensity of the processing gas of the substrate board treatment that in this case present embodiment is related to describes.
In the present embodiment, imagination is being implemented in the plasma treatment to a plurality of wafer W continuously, the result who handles the luminous intensity of the atom of processing gas of space S or molecule by passing through of handling that gas analysis unit 34 is measured behind the space is to produce ambiguous situation on observation window 40.
Under above-mentioned this situation, on observation window 40, produce smudgy as time goes by, therefore by handling in the luminous intensity that gas analysis unit 34 is measured behind the space (below title " by handling luminous intensity behind the space "), comprise the ambiguous influence of observation window 40 really.
In addition, produce on by the observation window 40 of handling gas analysis unit 34 behind the space ambiguous so down long-time, there is the situation that how much causes variation because of the fluctuation of the composition of the processing gas that is imported into the processing space S or import volume, by handling behind the space in the luminous intensity, not only comprise the ambiguous influence of observation window 40, also might comprise the influence of the fluctuation (following title " is handled the fluctuation of gas ") that the one-tenth that is imported into the processing gas of handling space S grades.Wherein, it is corresponding to handle the luminous intensity that influence and the gas analysis unit 35 before the importing of above-mentioned long front and back of the fluctuation of gas measured (below title " import preceding luminous intensity ").
In the present embodiment, for the ambiguous influence of removing observation window 40 with handle the influence of the fluctuation of gas, utilize before the importing before and after the plasma treatment of the wafer W of regulation sheet number luminous intensity and by luminous intensity after handling the space.
Specifically, at first, when the plasma treatment of a certain wafer W begins, measure the preceding luminous intensity of the importing corresponding and pass through to handle luminous intensity behind the space, and will be set at initial value to the ratio (following title " early strength ratio ") that imports preceding luminous intensity by luminous intensity after handling the space with certain wavelength.
Then, after the plasma treatment of multi-disc wafer W, measure before the importing corresponding luminous intensity and by handling luminous intensity behind the space with above-mentioned certain wavelength, calculate by handle luminous intensity behind the space to the ratio of luminous intensity before importing (following title " and through the time strength ratio ").At this moment, exist in by handling behind the space and produce the smudgy of observation window 40 in the gas analysis unit 34, and be imported into the possibility that the one-tenth of the processing gas of handling space S grades and how much changes, therefore through the time strength ratio and early strength than different.At this, calculate the corrected value be used to proofread and correct pass through after the plasma treatment of multi-disc wafer W and handle luminous intensity behind the space (below title " by handling luminous intensity corrected value behind the space ") so that early strength compare with through the time strength ratio become identical.
Through the time strength ratio and the difference of early strength ratio main cause be the ambiguous influence of observation window 40 and the influence of handling the fluctuation of gas, but by use by handle behind the space luminous intensity corrected value can make through the time strength ratio become with early strength than identical, therefore the influence of the fluctuation of ambiguous influence by handling luminous intensity corrected value and observation window 40 behind the space and processing gas is corresponding.And, by proofreading and correct by handling luminous intensity behind the space, remove the ambiguous influence of observation window 40 in can observation afterwards and handle the influence of the fluctuation of gas by handling behind the space luminous intensity corrected value.
Wherein, above-mentioned early strength than and through the time strength ratio comparison, and carry out about each wavelength by handling behind the space calculating of luminous intensity corrected value.
Then, with the corresponding plasma process conditions of situation about detecting of carrying out the state in the chamber 10 under, measure by handling luminous intensity behind the space.Should be by handling the influence that luminous intensity behind the space comprises the ambiguous influence of observation window 40 and handles the fluctuation of gas, but pass through to proofread and correct by luminous intensity behind the processing space by luminous intensity corrected value after handling the space, can remove the ambiguous influence of observation window 40 and handle the influence of the fluctuation of gas, can try to achieve the luminous intensity of the state in the real reflection chamber 10.
Wherein, known luminous intensity based on the state in the real reflection chamber 10 can be carried out following detecting, infer.By receive from by handle gas analysis unit 34 behind the space and import before the computer or the external server of the signal of telecommunication of luminous intensity of gas analysis unit 35 carry out following detecting, infer.
Inferring of deposit (デ Port) composition in the chamber 10
Inferring of sediment yield in the chamber 10
Detecting of the terminal point of etch processes
Detecting of the terminal point that air-dry (seasoning) handles
Detecting of big gas leakage
What helium leaked detects
Detecting of moisture in the chamber 10
Detecting of pollution in the chamber 10
The variation prediction of processing parameter, detect unusually
The prediction of the characteristic of wafer W, detect unusually
The part consumption amount infers in the chamber
The diagnosis of the individual difference of the individual difference of chamber 10 and processing module 2.
Then, with the bearing calibration of above-mentioned luminous intensity the plasma terminal point inspection method as the analytical method of the substrate board treatment of present embodiment is described.Below, also imagine in the plasma treatment of continuous a plurality of wafer W, the result who handles the luminous intensity of the atom of processing gas of space S or molecule by passing through of handling that gas analysis unit 34 is measured behind the space is to produce ambiguous situation on observation window 40.
Fig. 3 is the flow chart of the plasma treatment terminal point inspection method of the analytical method of the substrate board treatment that relates to as present embodiment.
In Fig. 3, at first, when the plasma treatment of a certain wafer W begins, measure the preceding luminous intensity of the importing corresponding and pass through luminous intensity behind the processing space, and set these early strengths than (step S301) with each wavelength.
Then, the multi-disc wafer W is carried out plasma treatment (step S302), measure the preceding luminous intensity of the importing corresponding and pass through to handle luminous intensity behind the space with each wavelength thereafter, calculate these through the time strength ratio (step S303), then, about each wavelength carry out above-mentioned early strength than and through the time comparison of strength ratio and the calculating (step S304) by luminous intensity corrected value after handling the space.
Then, with the corresponding plasma process conditions of situation about detecting of carrying out the state in the chamber 10 under, beginning plasma treatment (step S305), measure pass through corresponding and handle luminous intensity (step S306) behind the space with each wavelength, should be by handling with passing through of calculating behind the space that the luminous intensity corrected value proofreaies and correct by handling luminous intensity (step S307) behind the space, calculate the luminous intensity of the interior state of real reflection chamber 10 thus about each wavelength.
Then, detect the terminal point (step S308) of plasma treatment, finish this processing based on this luminous intensity.
Processing according to Fig. 3, be determined at before the importing before and after the plasma treatment of multi-disc wafer W luminous intensity and by handling luminous intensity behind the space, calculate by handling luminous intensity corrected value behind the space, handle behind the space luminous intensity corrected value with passing through of calculating and proofread and correct by handling luminous intensity behind the space.By luminous intensity corrected value behind the processing space, as mentioned above, because with the ambiguous influence of observation window 40 with to handle the influence of fluctuation of gas corresponding, can calculate the luminous intensity of the state in the real reflection chamber 10 from by handling the influence of removing the ambiguous influence of observation window 40 luminous intensity behind the space and handling the fluctuation of gas thus.Its result can correctly detect the state in the chamber 10, can correctly detect the terminal point of plasma treatment.
Next, the base plate processing system that is suitable for the substrate board treatment that second embodiment of the invention relates to is described.
Present embodiment, its structure is conceptually identical with the first above-mentioned execution mode with effect, only She Xiang situation difference.Therefore, omit the same structure of explanation, below only structure and the effect different with first execution mode are described.
In the present embodiment, only imagine part in the chamber be about to change before, the just situation (before and after the maintenance of reception room) after changing, do not imagine before and after ambiguous generation of observation window 40 and the situation of the replacing sensor front and back of spectrum analysis device 41.Below, the bearing calibration of the luminous intensity of the processing gas of the substrate board treatment that the present embodiment in the above-mentioned situation is related to describes.
Fig. 4 is the figure of bearing calibration of luminous intensity of the processing gas of the substrate board treatment that is used to illustrate that present embodiment relates to, the figure of the luminous intensity of the figure of the change part that Fig. 4 (A) causes because of part exchanging in the chamber of the luminous intensity of the processing gas by handling the space for expression, Fig. 4 (B) the processing gas after for the correction of representing partly to obtain with the change among Fig. 4 (A).
Shown in Fig. 4 (A), at first, in chamber before be about to the changing of part, make to handle and produce plasma in the space S, gas analysis unit 35 is measured the luminous intensity 42 of the processing gas of handling gas introduction tube 23 of flowing through before utilize importing, and utilizes by handling the luminous intensity 43 that gas analysis unit 34 is measured by the processing gas of handling space S behind the space.
Then, in chamber after the firm replacing of part, gas analysis unit 35 is measured the luminous intensity 44 of the processing gas of handling gas introduction tube 23 of flowing through before utilize importing, and the weapons utilization is by handling the luminous intensity 45 that gas analysis unit 34 is measured by the processing gas of handling space S behind the space.
At this, because the processing gas of handling gas introduction tube 23 of flowing through passes through to handle space S the influence that brings so the atomic concentration of the processing gas of the processing gas introduction tube 23 of flowing through or molecular concentration are not subjected to the replacing of part in the chamber.Therefore, under the identical situation of luminous intensity 44 and luminous intensity 42, must be in plasma process conditions and the chamber after the firm replacing of part in the chamber part be about to change the preceding corresponding to situation of plasma process conditions.In addition, under luminous intensity 44 and luminous intensity 42 situation inequality, unusual situation takes place in the composition or the import volume that are equivalent to be imported into the processing gas of handling space S, or the situation about breaking down of the spectrum analysis device 41 before importing in the gas analysis unit 35.
Under the identical situation of luminous intensity 44 and luminous intensity 42, utilize by handling the difference of the luminous intensity 43 before part is about to change in luminous intensity 45 and the chamber after part has just been changed in the chamber that gas analysis unit 34 is measured behind the space, after preceding, the firm replacing of soon changing of part in chamber, almost can not take place by handle gas analysis unit 34 behind the space through the time change (replacing sensor of the smudgy and spectrum analysis device 41 of observation window 40), so be with by the corresponding variation 47 of the influence of part exchanging in the chamber.That is, under the situation that the luminous intensity 44 of gas analysis unit 35 mensuration and luminous intensity 42 are identical before utilize importing, can try to achieve with chamber in the variation 47 of the corresponding luminous intensity of influence brought of part exchanging.
Then, shown in 4 (B), with the corresponding plasma process conditions of situation about detecting of carrying out the state in the chamber 10 under, utilize by handling the luminous intensity 48 that space gas analysis unit 34 is measured by the processing gas of handling space S.Since this luminous intensity 48 comprise with chamber in the variation 47 of the corresponding luminous intensity of influence brought of part exchanging, therefore by among luminous intensity 48, removing the variation 47 of above-mentioned luminous intensity, can try to achieve the luminous intensity 49 of the state in the real reflection chamber 10.
Even under the situation of the replacing sensor that carries out undue light analyzer 41, before be about to changing by determination sensor, the just luminous intensity 42,43,44,45 after changing, can try to achieve the variation 47 of the corresponding luminous intensity of influence equally with these.Its result can try to achieve the luminous intensity 49 of the state in the real reflection chamber 10.
Then, the plasma treatment terminal point inspection method of the analytical method of the substrate board treatment that the present embodiment as the bearing calibration of using above-mentioned luminous intensity is related to describes.Below also only imagine the situation after the interior part of chamber is about to preceding, the firm replacing of replacing, do not imagine the smudgy situation that produces the replacing sensor front and back of front and back and spectrum analysis device 41 of observation window 40.
Fig. 5 is the flow chart of the plasma treatment terminal point inspection method of the analytical method of the substrate board treatment that relates to as present embodiment.
In Fig. 5, at first, in chamber, make to handle in the space S before the replacing soon of part and produce plasma, gas analysis unit 35 is measured the luminous intensity 42 of the processing gas of handling gas introduction tube 23 of flowing through before utilize importing, and utilizes by handling the luminous intensity 43 (step S501) that gas analysis unit 34 is measured by the processing gas of handling space S behind the space.
Then, change part (for example shading ring or focusing ring 19) (step S502) in the chamber, be right after to make thereafter and handle generation plasma in the space S, gas analysis unit 35 was measured the luminous intensity 44 (step S503) of the processing gas of the processing gas introduction tube 23 of flowing through before utilization imported.
Then; whether the luminous intensity 44 that judgement is measured in step S503 and the luminous intensity of measuring in step S501 42 consistent (step S504); under inconsistent situation; with its as be imported into the processing gas of handling space S relevant unusually or spectrum analysis device 41 wherein break down and finish this processing; under the situation of unanimity; utilize the luminous intensity of measuring by the processing gas of handling space S by gas analysis unit 34 behind the processing space 45 (step S505), calculate the luminous intensity 45 of this mensuration and the difference (step S506) of the luminous intensity of in step S501, measuring 43.As described above, this difference for chamber in the corresponding variation 47 of influence brought of part exchanging.
Then, in chamber 10, accommodate wafer W, under the plasma process conditions of regulation, begin plasma treatment (step S507) to wafer W, utilize the luminous intensity of measuring by the processing gas of handling space S by gas analysis unit 34 behind the processing space 48 (step S508), by among this luminous intensity 48, removing the variation 47 (step S509) of above-mentioned luminous intensity, calculate the luminous intensity 49 of the state in the real reflection chamber 10.
Then, detect the terminal point (step S510) of plasma treatment, finish this processing based on this luminous intensity 49.
Processing according to Fig. 5, under the situation of luminous intensity 42,44 unanimities of the processing gas of the processing gas introduction tube of in chamber, being measured after preceding, the firm replacing of the replacing soon of part 23 of flowing through, the variation 47 of calculating luminous intensity 43,45 of the processing gas that passing through the processing space S after preceding, the firm replacing of the replacing soon of part in chamber, remove above-mentioned variation 47 in the luminous intensity 48 of the processing gas that passing through the processing space S from the plasma treatment of wafer W, calculate the luminous intensity 49 of the state in the real reflection chamber 10.
Part is about to change under the situation of luminous intensity 42,44 unanimities of being measured preceding, firm replacing back in chamber, utilize by handling part in luminous intensity 45 and the chamber after part has just been changed in the chamber that gas analysis unit 34 is measured behind the space and be about to change variation 47 between the preceding luminous intensity 43, corresponding with the influence of part exchanging in the chamber.Therefore, by among the luminous intensity of the plasma treatment of wafer W, measuring 48, removing above-mentioned variation 47, can calculate the luminous intensity 49 of the state in the real reflection chamber 10, its result, the state in the chamber 10 can be correctly detected, the terminal point of plasma treatment can be correctly detected.
In addition, even under the situation of the replacing sensor that carries out undue light analyzer 41, carrying out chamber under the situation of cleaning of part or carried out under the situation of the dry-cleaning in the chamber 10, also can try to achieve the luminous intensity 49 of the state in the real reflection chamber 10 according to the processing of Fig. 5, can correctly detect the state in the chamber 10.
In the base plate processing system 1 of above-mentioned Fig. 1, the manifold 14 in the processing module gas extraction system be connected by gas analysis unit 34 after handling the space.Thus, can isolate in chamber 10 by gas analysis unit 34 after handling the space, thereby can prevent by handling the analyzing and processing of gas analysis unit 34 behind the space, for example the generation of plasma is handled influence the interior plasma treatment of chamber 10 etc.
In addition, connect, in the processing module gas extraction system, be space, than the space of the upstream of TMP16 than the downstream of collector ring 13 by handling the manifold 14 of gas analysis unit 34 behind the space.TMP16 is necessary to supply with nitrogen to the downstream of this TMP16 in order to carry out exhaust, but because be configured in the upstream of TMP16 by gas analysis unit 34 behind the processing space, so in as the atomic concentration of the processing gas by handling space S or luminous intensity 48 that molecular concentration is measured, do not reflect the influence of the nitrogen of supply, in addition, because be configured in the downstream of collector ring 13 by gas analysis unit 34 after handling the space, so in above-mentioned luminous intensity 48, do not reflect the influence of plasma.Therefore, can more correctly detect state in the chamber 10.
In addition, by handle behind the space gas analysis unit 34 and import before in the gas analysis unit 35, in secondary cavity 37, produce plasma, atom or the molecule of the plasma exciatiaon of this generation from the processing gas of manifold 14 or 23 introducings of processing gas introduction tube, make atom or mulecular luminescence, this luminous intensity luminous and mensuration atom or molecule of beam split.Therefore, can measure atomic concentration or the molecular concentration of handling gas.
Because be used for making by a little less than the necessary High frequency power of gas analysis unit 35 generation plasmas before gas analysis unit 34 or the importing behind the processing space, for example be several watts degree, therefore be difficult to produce the smudgy or deterioration of observation window 40.Therefore, by using, can correctly measure the luminous intensity of atom or molecule by handling behind the space gas analysis unit 34 etc.
In addition, by handle behind the space gas analysis unit 34 or import before in the gas analysis unit 35, owing to utilize exhaust apparatus to carry out exhaust in the secondary cavity 37, the processing gas hold-up that therefore can prevent spectrum analysis in secondary cavity 37, thereby can more correctly be determined at the atom handled in the gas or the luminous intensity of molecule.
Moreover, because the needed time of spectrum analysis by gas analysis unit 34 grades behind the processing space need not be identical with the needed time of plasma treatment in the chamber 10, therefore necessary Min. can be suppressed to be the time that plasma takes place in the secondary cavity 37, necessary Min. can be suppressed to be the time of the high-frequency current of flowing through in the coil 38.
In addition, in aforesaid substrate treatment system 1, gas stream in the chamber 30 of load-lock module 5 is through the load-lock module gas extraction system 32 of load-lock module 5, load-lock modular gas analytic unit 36 is introduced the gas of the load-lock module gas extraction system 32 of flowing through, and measures the atomic concentration or the molecular concentration of gas according to the luminous intensity of atom in this gas or molecule.State in the atomic concentration of the gas in the chamber 30 or the molecular concentration reflection chamber 30.Therefore, can detect state in the chamber 30 of load-lock module 5.
In addition, can carry out following detecting, infer according to the luminous intensity of the gas in the chamber 30 as can be known.Reception is carried out following detecting, infer from the computer or the external server of the signal of telecommunication of the above-mentioned luminous intensity of load-lock modular gas analytic unit 36.
The composition of the processing gas that flows into to the chamber 30 of load-lock module 5 from processing module 2, the detection of concentration
Be adsorbed on the detection of the composition of the adsorbate on the preceding wafer W of plasma treatment
From the moisture of wafer W with handle the detection of terminal point of the purging (purge) of gas (for example CF is a gas)
Detecting of big gas leakage etc.
In addition, load-lock modular gas analytic unit 36 is connected with load-lock module gas extraction system 32.Thus, load-lock modular gas analytic unit 36 can be isolated in chamber 30, thereby can prevent to exert an influence in the chamber 30 of analyzing and processing in the load-lock modular gas analytic unit 36 load-lock module 5.
In aforesaid substrate treatment system 1, is connected with manifold 14 by gas analysis unit 34 after handling the space, still is not limited thereto with the place that is connected by gas analysis unit 34 behind the processing space, can be the processing module gas extraction system Anywhere, and, also can be connected with chamber 10.Thus, can easily introduce by handling the processing gas of space S by gas analysis unit 34 after handling the space, its result can easily detect the state in the chamber 10.
In addition, load-lock modular gas analytic unit 36 is connected with load-lock module gas extraction system 32, but load-lock modular gas analytic unit 36 also can be connected with chamber 30.Thus, load-lock modular gas analytic unit 36 can easily be introduced the gas in the chamber 30, and its result can easily detect the state in the chamber 30.
Above-mentioned possess the secondary cavity 37 that makes plasma generation in inside by gas analysis unit 35 and load-lock modular gas analytic unit 36 before gas analysis unit 34, the importing behind the processing space, but be not limited thereto by the structure of gas analysis unit 34 grades behind the processing space.As by handling gas analysis unit 34 behind the space, but the also mass analyzer of using gases or Fourier transform infrared spectrophotometer (FTIR), thus, better atomic concentration or the molecular concentration of handling the gas in gas and the chamber 30 measured on precision ground.
In addition, also can not have secondary cavity by gas analysis unit 34 behind the processing space and make plasma generation.Specifically, as shown in Figure 6, comprising by gas analysis unit 34 ' after handling the space: the forniciform curved tube 50 (flue) of flowing process gas (for example part of processing module gas extraction system), the plasma generating device 51 that in this curved tube 50, makes plasma generation, the observation window 52 that constitutes by quartz glass of wall that is embedded in curved tube 50 and the spectrum analysis device 53 (spectral photometry device) of relative these observation window 52 configurations.
In the gas analysis unit 34 ', the twilight sunset in the downstream of the plasma generation central part 50a of spectrum analysis device 53 in observation window 52 receptions and beam split curved tube 50 is measured luminous intensity after this is by the processing space.Then, measure the atomic concentration or the molecular concentration of gas based on the result of this mensuration.
Utilize by gas analysis unit 34 ' behind the processing space, the twilight sunset in the downstream of the plasma generation central part 50a in the beam split curved tube 50 is measured luminous intensity.Therefore, can correctly measure luminous intensity, owing to do not need to introduce the secondary cavity of handling gas, therefore can handle gas analysis simultaneously with the structure of cheapness.In addition, import before gas analysis unit 35 or load-lock modular gas analytic unit 36 also can have with by handling the same structure of gas analysis unit behind the space 34 '.
In addition, also can in the detecting of the state in loading module 4 or the wafer case 3, use the gas analysis unit that has with the same structure of load-lock modular gas analytic unit 36.
Use the analytical method of the substrate board treatment that the present embodiment of the bearing calibration of above-mentioned luminous intensity relates to, the terminal point that is applicable to plasma detects, but the object that the terminal point that is suitable for detects is not limited thereto, and also can handle or PHT (Post Heat Treatment) processing for COR (Chemical Oxide Remove).
In addition, by supply with the storage medium of the program code of the software that stores the function that realizes above-mentioned execution mode to computer or external server, CPU by computer etc. reads and carries out the program code that is stored in the storage medium, also can reach purpose of the present invention.
In this case, become the function that the program code of reading self is realized above-mentioned execution mode from storage medium, the storage medium of program code and this program code of storage constitutes the present invention.
In addition, as the storage medium that is used to supply with program code, can be for example CD of RAM, NV-RAM, soft (registered trade mark) dish, hard disk, photomagneto disk, CD-ROM, CD-R, CD-RW, DVD (DVD-ROM, DVD-RAM, DVD-RW, DVD+RW) etc., tape, non-volatile storage card, other ROM etc. can store the storage medium of said procedure code.Perhaps, the said procedure code also can be supplied with computer etc. by downloading from other not shown computers of being connected with internet, commercial network or local area network (LAN) etc. or database etc.
In addition, except the program code of reading by object computer etc., realize the function of above-mentioned execution mode, also comprise following situation: based on the indication of this program code, operating system) etc. the OS that on CPU, operates (Operating System: carry out part or all of actual processing, handle the function that realizes above-mentioned execution mode by this.
Moreover, also comprise following situation: the program code of reading from storage medium, be written into the expansion board that is inserted in computer etc. or with functional expansion unit that computer etc. is connected in behind the memory that possesses, indication based on this program code, the CPU that this expansion board or functional expansion unit possess etc. carries out part or all of actual treatment, handles the function that realizes above-mentioned execution mode by this.
The program code that the mode of said procedure code can be carried out by object code (Object code), by interpretive program (Interpreter), the script data modes such as (Script data) of supplying with OS constitute.

Claims (18)

1. substrate board treatment, it comprises reception room of accommodating substrate and the gas gatherer that imports gas to this reception room, described reception room has the processing space of implementing predetermined process on described substrate with described gas, and described substrate board treatment is characterised in that, comprising:
Analyze the preceding gas analyzing apparatus of the importing that imports the preceding gas of described reception room;
Analyze the back gas analyzing apparatus that passes through by the gas behind the described processing space; With
According to importing the gas analysis result before the described reception room and detect the state checking device of the state in the described reception room by the gas analysis result behind the described processing space,
This state checking device, the gas analysis result who passes through behind the described processing space who implements on a plurality of described substrates before the described predetermined process is calculated the ratio of the gas analysis result before importing described reception room, and the gas analysis result who passes through behind the described processing space who implements on a plurality of described substrates after the described predetermined process calculated the ratio of the gas analysis result before importing described reception room, so that the ratio before implementing described predetermined process on described a plurality of described substrates with on described a plurality of described substrates, implement described predetermined process after the identical mode of ratio, calculating is used for proofreading and correct by the gas analysis result behind the described processing space with this analysis result corrected value of calculating implement the analysis result corrected value that the gas analysis result behind the described processing space proofreaies and correct that passes through after the described predetermined process on described a plurality of described substrates.
2. substrate board treatment as claimed in claim 1 is characterized in that:
Described state checking device is according to the described corrected terminal point that detects described predetermined process by the gas analysis result behind the described processing space.
3. substrate board treatment as claimed in claim 1 or 2 is characterized in that:
It has carrying out the gas extraction system of exhaust in the described reception room, disposes described by the back gas analyzing apparatus in described gas extraction system.
4. substrate board treatment as claimed in claim 3 is characterized in that:
Described reception room has the exhaustion plate that the plasma that prevents described processing space flows out downstream, and described gas extraction system has the macromolecule vacuum pump, disposes described by the back gas analyzing apparatus between described exhaustion plate and described macromolecule vacuum pump.
5. substrate board treatment as claimed in claim 1 or 2 is characterized in that:
On described reception room, dispose described by the back gas analyzing apparatus.
6. substrate board treatment as claimed in claim 1 or 2 is characterized in that:
Gas analyzing apparatus and describedly comprise before the described importing by at least one side in the gas analyzing apparatus of back: the gas of introducing gas introduces the chamber, introduce at this gas indoorly make the plasma generating device of plasma generation, to the luminous spectral photometry device that carries out beam split and measure luminous intensity by atom in the described gas of described plasma exciatiaon or molecule.
7. substrate board treatment as claimed in claim 1 or 2 is characterized in that:
Gas analyzing apparatus and described at least one side by the back gas analyzing apparatus are mass analyzer before the described importing.
8. substrate board treatment as claimed in claim 1 or 2 is characterized in that:
Gas analyzing apparatus and described at least one side by the back gas analyzing apparatus are Fourier transform infrared spectrophotometer before the described importing.
9. substrate board treatment as claimed in claim 1 or 2 is characterized in that:
Gas analyzing apparatus and described at least one side by the back gas analyzing apparatus comprise before the described importing: the flue of described gas flow, in this flue, make plasma generation plasma generating device, the twilight sunset in the downstream of the plasma generation central part in the described flue is carried out beam split and is measured the spectral photometry device of luminous intensity.
10. substrate board treatment as claimed in claim 1 or 2 is characterized in that:
Described substrate board treatment with described substrate moved into the base board delivery device of taking out of to this substrate board treatment be connected,
This base board delivery device has the gas analyzing apparatus of analyzing the gas in this base board delivery device.
11. substrate board treatment as claimed in claim 10 is characterized in that:
Described base board delivery device has the gas in this base board delivery device is carried out of exhaust
Two gas extraction system, described gas analyzing apparatus are configured on this second gas extraction system.
12. substrate board treatment as claimed in claim 10 is characterized in that:
Described base board delivery device has second reception room of temporarily accommodating described substrate, and described gas analyzing apparatus is configured on described second reception room.
13. substrate board treatment, it comprises reception room of accommodating substrate and the gas gatherer that imports gas to this reception room, described reception room has the processing space of implementing predetermined process on described substrate with described gas, and described substrate board treatment is characterised in that, comprising:
Analyze the preceding gas analyzing apparatus of the importing that imports the preceding gas of described reception room;
Analyze the back gas analyzing apparatus that passes through by the gas behind the described processing space; With
According to importing the gas analysis result before the described reception room and detect the state checking device of the state in the described reception room by the gas analysis result behind the described processing space,
This state checking device, under the situation that gas analysis before the described reception room of importing before and after the maintenance of described reception room comes to the same thing, the variation of passing through the gas analysis result behind the described processing space between calculating before and after the maintenance of described reception room is proofreaied and correct by the gas analysis result behind the described processing space with this variation of calculating.
14. substrate board treatment as claimed in claim 13 is characterized in that:
Part replacement, the dry-cleaning that parts clean or described reception room is interior are equivalent to the maintenance of described reception room.
15. the analytical method of a substrate board treatment, described substrate board treatment comprises reception room of accommodating substrate and the gas gatherer that imports gas to this reception room, described reception room has the processing space of implementing predetermined process on described substrate with described gas, described analytical method is characterised in that, comprising:
Analyze the preceding gas analysis step of the importing that imports the preceding gas of described reception room;
Analyze the back gas analysis step of passing through by the gas behind the described processing space; With
According to importing the gas analysis result before the described reception room and detect step by the state that the gas analysis result behind the described processing space detects the state in the described reception room,
Detect in the step at this state, the gas analysis result who passes through behind the described processing space who implements on a plurality of described substrates before the described predetermined process is calculated the ratio of the gas analysis result before importing described reception room, and the gas analysis result who passes through behind the described processing space who implements on a plurality of described substrates after the described predetermined process calculated the ratio of the gas analysis result before importing described reception room, so that the ratio before implementing described predetermined process on described a plurality of described substrates with on described a plurality of described substrates, implement described predetermined process after the identical mode of ratio, calculating is used for proofreading and correct by the gas analysis result behind the described processing space with this analysis result corrected value of calculating implement the analysis result corrected value that the gas analysis result behind the described processing space proofreaies and correct that passes through after the described predetermined process on described a plurality of described substrates.
16. the analytical method of substrate board treatment as claimed in claim 15 is characterized in that:
Detect in the step at described state, according to the described corrected terminal point that detects described predetermined process by the gas analysis result behind the described processing space.
17. the analytical method of a substrate board treatment, described substrate board treatment comprises reception room of accommodating substrate and the gas gatherer that imports gas to this reception room, described reception room has the processing space of implementing predetermined process on described substrate with described gas, described analytical method is characterised in that, comprising:
Analyze the preceding analytical procedure of the importing that imports the preceding gas of described reception room;
Analyze the back gas analysis step of passing through by the gas behind the described processing space; With
According to importing the gas analysis result before the described reception room and detect step by the state that the gas analysis result behind the described processing space detects the state in the described reception room,
Detect in the step at this state, under the situation that gas analysis before the described reception room of importing before and after the maintenance of described reception room comes to the same thing, the variation of passing through the gas analysis result behind the described processing space between calculating before and after the maintenance of described reception room is proofreaied and correct by the gas analysis result behind the described processing space with this variation of calculating.
18. the analytical method of substrate board treatment as claimed in claim 17 is characterized in that:
Part replacement, the dry-cleaning that parts clean or described reception room is interior are equivalent to the maintenance of described reception room.
CNB2007101675381A 2006-11-10 2007-10-26 The analytical method of substrate board treatment and this device Expired - Fee Related CN100543932C (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2006305844 2006-11-10
JP2006305844A JP5016294B2 (en) 2006-11-10 2006-11-10 Substrate processing apparatus and analysis method of the apparatus

Publications (2)

Publication Number Publication Date
CN101179008A CN101179008A (en) 2008-05-14
CN100543932C true CN100543932C (en) 2009-09-23

Family

ID=39405199

Family Applications (1)

Application Number Title Priority Date Filing Date
CNB2007101675381A Expired - Fee Related CN100543932C (en) 2006-11-10 2007-10-26 The analytical method of substrate board treatment and this device

Country Status (4)

Country Link
JP (1) JP5016294B2 (en)
KR (1) KR100938012B1 (en)
CN (1) CN100543932C (en)
TW (1) TW200839869A (en)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5338467B2 (en) * 2009-05-11 2013-11-13 コニカミノルタ株式会社 Plasma measuring device
KR101169764B1 (en) 2010-10-15 2012-07-30 (주)쎄미시스코 Real time monitoring system of process chamber
CN105405735B (en) * 2014-08-22 2017-07-25 中微半导体设备(上海)有限公司 The monitoring method of plasma processing apparatus and plasma-treating technology
CN117894718A (en) * 2016-06-30 2024-04-16 株式会社国际电气 Substrate processing apparatus, method for manufacturing semiconductor device, and recording medium
CN112368063B (en) * 2018-06-13 2023-01-06 西默有限公司 Gas monitoring system
US11036202B2 (en) * 2018-12-13 2021-06-15 Lam Research Corporation Real-time health monitoring of semiconductor manufacturing equipment

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6353927A (en) * 1986-08-25 1988-03-08 Hitachi Ltd Plasma processing system
JPH02170981A (en) * 1988-12-21 1990-07-02 Fujitsu Ltd Cvd device
JPH11265878A (en) * 1998-01-27 1999-09-28 Internatl Business Mach Corp <Ibm> Method and device for providing detection of end point by analysis of residual gas
JP4387573B2 (en) * 1999-10-26 2009-12-16 東京エレクトロン株式会社 Process exhaust gas monitoring apparatus and method, semiconductor manufacturing apparatus, and semiconductor manufacturing apparatus management system and method
JP2001250812A (en) 2000-03-08 2001-09-14 Sony Corp Method and device for detecting end point of plasma treatment
JP2001338967A (en) * 2000-05-29 2001-12-07 Hitachi Kokusai Electric Inc Board processing device
JP3634734B2 (en) * 2000-09-22 2005-03-30 株式会社日立製作所 Plasma processing apparatus and processing method
JP2002151467A (en) * 2000-11-15 2002-05-24 Nec Corp System and method for reusing exhaust gas
US6791692B2 (en) * 2000-11-29 2004-09-14 Lightwind Corporation Method and device utilizing plasma source for real-time gas sampling
JP2003179035A (en) * 2001-12-13 2003-06-27 Ulvac Japan Ltd End point-detecting method in plasma applied equipment
JP2004039952A (en) * 2002-07-05 2004-02-05 Tokyo Electron Ltd Plasma treatment apparatus and monitoring method thereof
JP4385086B2 (en) * 2003-03-14 2009-12-16 パナソニック株式会社 CVD apparatus cleaning apparatus and CVD apparatus cleaning method

Also Published As

Publication number Publication date
CN101179008A (en) 2008-05-14
JP2008124216A (en) 2008-05-29
KR100938012B1 (en) 2010-01-21
JP5016294B2 (en) 2012-09-05
TWI358768B (en) 2012-02-21
TW200839869A (en) 2008-10-01
KR20080042717A (en) 2008-05-15

Similar Documents

Publication Publication Date Title
CN100543932C (en) The analytical method of substrate board treatment and this device
TWI240600B (en) Apparatus and method for use of optical system with a plasma processing system
CN101275574B (en) Turbo-molecular pump, substrate processing apparatus, and method for suppressing attachment of depositions to turbo-molecular pump
FI95421C (en) Device and method for treating semiconductors, such as silicon wafer
CN107078014B (en) Assess the System and method for that inner surface is adjusted in plasma processing equipment
TWI277164B (en) Leak detector and process gas monitor
US6696362B2 (en) Method for using an in situ particle sensor for monitoring particle performance in plasma deposition processes
KR100445945B1 (en) Purging method of cvd apparatus
US6936842B2 (en) Method and apparatus for process monitoring
JP6989510B2 (en) Systems and methods for detecting the presence of one or more environmental conditions in a substrate processing system
US20070235059A1 (en) Method of recovering valuable material from exhaust gas stream of a reaction chamber
GB2331107A (en) Method of optimizing the recipe of a cleaning process for a process chamber for chemical vapour deposition
TW200834778A (en) Integrated vacuum metrology for cluster tool
US10502651B2 (en) Creating a mini environment for gas analysis
CN107941757A (en) The system and method for oxygen in the substrate area of in situ detection lining treatment system
JP2006064416A (en) Method and apparatus for measuring gas barrier property of plastic molded body
CN103855048A (en) Vacuum chamber measurement using residual gas analyzer
US8021513B2 (en) Substrate carrying apparatus and substrate carrying method
KR0147041B1 (en) Plasma-process system with batch scheme
US7637143B2 (en) Substrate processing apparatus and analysis method therefor
US7094614B2 (en) In-situ monitoring of chemical vapor deposition process by mass spectrometry
JP2001093059A (en) Device and method for detecting gas leakage
JP2001257197A (en) Manufacturing method and manufacturing device for semiconductor device
JP2000260750A (en) Gas analyzer for heated and separated gas
Lu et al. Process sensing and metrology in gate oxide growth by rapid thermal chemical vapor deposition from SiH 4 and N 2 O

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20090923

Termination date: 20161026

CF01 Termination of patent right due to non-payment of annual fee