CN100541851C - Hall effect devices and manufacture method thereof - Google Patents
Hall effect devices and manufacture method thereof Download PDFInfo
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- CN100541851C CN100541851C CNB2004100065981A CN200410006598A CN100541851C CN 100541851 C CN100541851 C CN 100541851C CN B2004100065981 A CNB2004100065981 A CN B2004100065981A CN 200410006598 A CN200410006598 A CN 200410006598A CN 100541851 C CN100541851 C CN 100541851C
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- 230000005355 Hall effect Effects 0.000 title claims abstract description 72
- 238000000034 method Methods 0.000 title claims abstract description 39
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 25
- 239000000463 material Substances 0.000 claims abstract description 44
- 238000005520 cutting process Methods 0.000 claims abstract description 11
- WPYVAWXEWQSOGY-UHFFFAOYSA-N indium antimonide Chemical compound [Sb]#[In] WPYVAWXEWQSOGY-UHFFFAOYSA-N 0.000 claims description 13
- 229920005989 resin Polymers 0.000 claims description 13
- 239000011347 resin Substances 0.000 claims description 13
- 229910052751 metal Inorganic materials 0.000 claims description 7
- 239000002184 metal Substances 0.000 claims description 7
- 238000009413 insulation Methods 0.000 claims description 6
- 239000003822 epoxy resin Substances 0.000 claims description 4
- 229920000647 polyepoxide Polymers 0.000 claims description 4
- UQSXHKLRYXJYBZ-UHFFFAOYSA-N Iron oxide Chemical compound [Fe]=O UQSXHKLRYXJYBZ-UHFFFAOYSA-N 0.000 claims description 2
- 239000004593 Epoxy Substances 0.000 claims 1
- 238000005538 encapsulation Methods 0.000 claims 1
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- 230000004907 flux Effects 0.000 abstract description 15
- 230000005415 magnetization Effects 0.000 abstract description 2
- 238000010586 diagram Methods 0.000 description 15
- 210000003128 head Anatomy 0.000 description 13
- 238000007639 printing Methods 0.000 description 8
- 230000001419 dependent effect Effects 0.000 description 6
- 230000000694 effects Effects 0.000 description 6
- 230000035945 sensitivity Effects 0.000 description 4
- 230000032683 aging Effects 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 238000001179 sorption measurement Methods 0.000 description 3
- 229910001035 Soft ferrite Inorganic materials 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000007812 deficiency Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
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- 238000002474 experimental method Methods 0.000 description 2
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Abstract
A kind of with changes of magnetic field the hall effect devices of resistance change, use permanent magnet as the substrate that supports the magneto sensor that changes with changes of magnetic field, two have equal magnetic field as a pair of magneto sensor group, with identical substantially resistance value; The manufacture method of described hall effect devices is: form a plurality of magneto sensor groups above the unmagnetized permanent magnet material, cut off together with the permanent magnet material by cutting machine very precision ground, cut each magneto sensor is taken out in turn the permanent magnet material is magnetized the back as permanent magnet, the center of the permanent magnet material after the magnetization is consistent substantially with the center of magneto sensor group, the interior both sides of magneto sensor group can obtain equal magnetic flux.
Description
Technical field
The present invention relates to a kind of with changes of magnetic field the hall effect devices and the manufacture method thereof of resistance change, relate in particular to a kind of energy by the article changes of magnetic field and the hall effect devices and the manufacture method thereof of the identify objects true and false.
Background technology
At present, the means of using indium antimonide material InSb (being called for short InSb) to wait the hall effect devices (being also referred to as magneto-dependent sensor) of magneto sensor composition to be used for the magnetic of the lobate medium of test paper are well-known.Magneto-dependent sensor is to utilize the transducer that the Semiconductor InSb crystal (claiming the MR chip later on) of magnetic-field-sensitive is made, and it can change the resistance of MR chip with the variation in magnetic field, the variation or having or not of magnetic in magnetic field is detected, with the form output of voltage.The ordinary construction of the magneto-dependent sensor of use magneto sensor is connected in series by at least two paired magneto sensors 11 and 12 as shown in Figure 1, and the other end and the power supply of magneto sensor 11 join, and the other end of magneto sensor 12 joins with ground, constitutes bleeder circuit.
In addition, we know the magnetic density of general magneto sensor about 0.1T (tesla, magnetic flux unit), and when it was applied this magnetic flux more than density, the linearity of magneto-dependent sensor was good more, export highly more, and then the sensitivity of hall effect devices is high more.Be added on the magnetic field of MR chip when too small, its changes in resistance rate is also little, and at this moment, in order to improve the transducer sensitivity, common way is by using the permanent magnet biasing, make transducer be in the high sensitivity state, and like this, transducer just can detect magnetisable material.Method near by two a pair of magneto sensors 11 and 12 and can produce place perpendicular to the magnetic field of magneto sensor 11 and 12 permanent magnet 21 that is adhesively fixed, can play the effect of magnetic bias as shown in Figure 2.When magnetic conductor changes in magnetic field during near this magnetic field, the magnetic field size variation then magneto sensor 11 and 12 resistance also change, so the magnitude of voltage of the node of magneto sensor 11 and 12 also changes thereupon, thereby can obtain output voltage.
As shown in Figure 3, known two a pair of magneto sensors 11 and 12 manufacture method are: on the substrate 31 that makes with materials such as glass and soft ferrite, utilize and steaming or etching method waits and forms.The flatness of substrate 31 and the depth of parallelism require very high, and requirement is the high material of resistivity.Be processed to form many group magneto sensors above the substrate 31, cut off together with substrate along X, Y line of cut 32 with cutting machine then, thereby obtain a plurality of two a pair of magneto sensors 11 and 12.What each was cut constitutes hall effect devices by two a pair of magneto sensors 11 and 12 together with substrate 31, permanent magnet 21 and shell etc.As shown in Figure 4, below the substrate 31 that supports magneto sensor 11 and 12, fixing permanent magnet 21.Sometimes as shown in Figure 5, permanent magnet 21 is fixed on the circuit substrate 51.
For above-mentioned magneto-dependent sensor, the magnetic field intensity resistance value approaching more, its both sides of having only two sides of two a pair of magneto sensors 11 and 12 to obtain is approaching more, the hall effect devices characteristic is just good more.
The permanent magnet that general magneto-dependent sensor uses is diameter and high cylinder at 4～5mm.The magnetic density of its permanent magnet is a left-right symmetric with the center as shown in Figure 6, and is different with position different magnetic field intensity.And have with from the increasing of the surface distance of permanent magnet and the trend of magnetic density decay.Just because of this reason, as Fig. 7, Fig. 8, shown in Figure 9, the hall effect devices that is made of together with substrate 31 two a pair of magneto sensors 11 and 12 and the center of permanent magnet 21 be little to be had skew 71 or littlely has 81, or when producing problems such as not parallel 91, concerning two a pair of magneto sensors 11 and 12, to obtain equal magnetic flux be very difficult.In order to reduce the influence of aspects such as trace skew 71, micro-inclination 81, trace not parallel 91, the normal employing with the area increasing of permanent magnet or ways such as the surperficial distance with magneto sensor of permanet magnet strengthen slightly.But, magneto sensor 11 and 12 and the distance of permanent magnet 21 increase, then its magnetic flux density that obtains diminishes, must adopt for this reason the permanent magnet that can obtain high surface magnetic flux amount of high price or the big permanent magnet of thickness come to compensation.
In fact, the employing of above various ways, concerning magneto sensor 11 and 12, it still is very difficult obtaining equal magnetic flux, and good hall effect devices also is very difficult to obtain that this specific character of equal resistance value is almost arranged.In addition because magneto sensor 11 and 12 and permanent magnet 21 between the adhesive linkage of bonding portion of many intermediaries product is arranged and the increasing of the bonding process made, be easy to produce the problem of gradient 91.
Simultaneously, not only there are trace skew 71, trace to tilt 81, micro-not parallel 91 etc. between the hall effect devices that constitutes together with substrate 31 of two a pair of magneto sensors 11 and 12 and the permanent magnet 21, can cause the resistance value of two paired magneto sensors 11 and 12 variant, and the variation with ambient temperature also can cause the change in impedance value rate of this a pair of magneto sensor 11 and 12 inconsistent, as shown in figure 10.Therefore the output voltage values (hereinafter to be referred as mid-point voltage) at magneto sensor 11 and 12 places of being in series, also can fluctuate with the variation of ambient temperature.
The fixed-site precision prescribed of material, permanent magnet 21 that is the flatness of substrate 31 in the course of processing and the depth of parallelism, substrate 31 is all very high.The many adverse factors that produce in the assembling process and the temperature of environment all can influence precision, symmetry and the antijamming capability of product.
Summary of the invention
In order to overcome the deficiency of existing hall effect devices structure, one object of the present invention is: provide a kind of manufacturing process greatly to reduce, the hall effect devices small-sized, that precision is high, price is low.
In order to overcome the deficiency of existing hall effect devices manufacture method, another object of the present invention is: a kind of manufacture method of small-sized, precision is high, price is low hall effect devices is provided, and its manufacturing process greatly reduces.
The technical solution adopted for the present invention to solve the technical problems is:
A kind of with changes of magnetic field the hall effect devices of resistance change, comprise magneto sensor, permanent magnet, fixed head, lead and shell, it is characterized in that: described magneto sensor is a pair of magneto sensor group, and tightly is bonded in the top of permanent magnet by resin; Described magneto sensor group and permanent magnet are bonding and be fixed on fixed head top.
A kind of with changes of magnetic field the manufacture method of the hall effect devices of resistance change, it is characterized in that:
Comprise following steps:
1. indium antimonide material InSb thin plate is processed to form the right magneto sensor groups of forming more;
2. with above-mentioned form right magneto sensor group and the resin bondings of unmagnetized permanent magnet material more;
3. paired magneto sensor is cut off together with the permanent magnet material;
4. the single permanent magnet material of each piece after cutting off is magnetized and become permanent magnet;
5. divided paired magneto sensor group is adhesively fixed on the fixed head together together with permanent magnet.
The invention has the beneficial effects as follows that hall effect devices uses permanent magnet as the substrate that supports the magneto sensor that changes with changes of magnetic field, substituted Fig. 4, substrate 31 of the prior art shown in Figure 5 simultaneously and as the permanent magnet of magnetic bias, simple in structure.Hall effect devices of the present invention, its magneto sensor 11 and 12 and the side-play amount and the gradient of permanent magnet 21 little, magneto sensor 11 and 12 can obtain equal magnetic flux, and its resistance value is approaching, and the fluctuation that varies with temperature the mid-point voltage of hall effect devices has also reduced.Use manufacture method of the present invention, reduced manufacturing process, a kind of small-sized, precision is high, price is low hall effect devices is provided.
Description of drawings
The present invention is further described below in conjunction with drawings and Examples.
Fig. 1 is the method for attachment schematic diagram of magneto sensor of the prior art;
Fig. 2 be in the prior art magneto sensor at the ideograph that adds under the situation of magnetic field;
Fig. 3 is the manufacture method schematic diagram of hall effect devices in the prior art;
Fig. 4 is hall effect devices and the fixing pattern diagram of permanent magnet in the prior art;
Fig. 5 is the fixing pattern diagram of magnetoelectricity argument part and permanent magnet and circuit substrate in the prior art;
Fig. 6 is the vertical direction magnetic density gradient schematic diagram of common permanent magnet;
Fig. 7 be in the prior art magneto sensor for the shift phenomenon schematic diagram at permanent magnet center;
Fig. 8 be in the prior art magneto sensor for the tilt phenomenon schematic diagram of permanent magnet;
Fig. 9 be in the prior art magneto sensor for the unparalleled phenomenon schematic diagram of permanent magnet;
Figure 10 is that magneto sensor varies with temperature and resistance change rate and mid-point voltage rate of change statistical chart;
Figure 11 is the magneto sensor manufacture method schematic diagram of hall effect devices of the present invention;
Figure 12 is that cut-out powder that the magneto sensor cutting of hall effect devices of the present invention causes is adsorbed in the schematic diagram on the permanent magnet;
Figure 13 is the mutual sorption schematic diagram of hall effect devices of the present invention;
Figure 14 is the cutting-off method schematic diagram of hall effect devices of the present invention;
Figure 15 is an ideograph of using the hall effect devices of hall effect devices of the present invention;
Figure 16 is a circuit diagram of the present invention;
Figure 17 is the mid-point voltage comparison diagram of the hall effect devices of hall effect devices of the prior art and the present invention's making;
Figure 18 is the variable quantity comparison diagram of the mid-point voltage of the hall effect devices made of hall effect devices of the prior art and the present invention.
The explanation of reference numeral:
11,12-magneto sensor; The 21-permanent magnet; The 22-magnetic line of force; The 31-substrate; The 32-line of cut; The 51-fixed head; The 71-hall effect devices is for the skew of permanent magnet; The 81-hall effect devices is for the gradient of permanent magnet; The 91-hall effect devices is for the nonparallelism of permanent magnet; 111-permanent magnet material; The 112-adhering resin; The cut-out powder of 121-permanent magnet; The permanent magnet that 122-is magnetized; The attraction of 131-permanent magnet; The 141-cutter; The 151-shell; The 152-metal wire; The 153-pad; The 154-lead; The 155-potting resin; The 161-blocked impedance.
Embodiment
Inventive point of the present invention is, hall effect devices uses small permanent magnet as the substrate that supports the magneto sensor that changes with changes of magnetic field, Fig. 4, substrate 31 of the prior art shown in Figure 5 have been substituted, small permanent magnet not only plays the effect of substrate, can play the effect of magnetic bias simultaneously again.
With the hall effect devices that the present invention makes, its structure and position concern that as shown in figure 15 11 and 12 is a pair of divided magneto sensor, and described magneto sensor can adopt the indium antimonide material; Magneto sensor 11 and 12 usefulness resins 112 are bonded in small permanent magnet 122 tops.Divided two a pair of magneto sensors 11,12 and permanent magnet 122 are adhesively fixed on the fixed head 51.Fixed head 51 and hall effect devices are electrically connected by metal wire 152.For leaving certain spacing in the inboard that makes shell 151, pad 153 to be put into magneto sensor 11,12 both sides, and keep suitable spacing with magneto sensor 11,12, described pad 153 lower ends are fixed on the fixed head 51, and the upper end can be used to supporting housing 151.The inside of shell 151 encapsulates with epoxy resin 155.The lead 154 of fixed head 51 is connected and fixed plate 51, and draws from the hall effect devices below.Described shell can be metal-back, and described fixed head 51 can be circuit board.
Because, magneto sensor 11 and 12 and permanent magnet 122 adjacent settings, promptly distance reduces, then its magnetic flux density that obtains becomes big, needn't adopt the permanent magnet that can obtain high surface magnetic flux amount or the big permanent magnet of thickness of high price for this reason, only small permanent magnet can play a role, and at this, greatly reduces and makes and Material Cost.
Below be the detailed description of the manufacture method of hall effect devices of the present invention:
Hall effect devices in the past is to be processed to form a plurality of magneto sensors on the substrate 31 that materials such as glass and soft ferrite are made, and cuts off with cutting machine then.And the present invention as shown in figure 11, on unmagnetized permanent magnet material 111, be processed to form out many magneto sensors 11 and 12, the cutting machine that utilization can be controlled in the micron accurately cuts off magneto sensor 11 and 12 together with permanent magnet material 111, and then the single permanent magnet material 111 of each piece after cutting off is magnetized the permanent magnet of back as hall effect devices.If not like this, but with the words cut off again after permanent magnet 111 magnetization, then produce the situation that Figure 12 represents: after promptly permanent magnet 122 is cut off, can produce magnetic 121, this magnetic is adsorbed on the characteristic that small permanent magnet 122 surfaces can influence the permanent magnet material.After small permanent magnet 122 after more disadvantageously magnetizing as shown in figure 13 was cut off, it was attracted power 131 mutual sorptions each other, can make magneto sensor 11 and 12 breakages.
It is consistent that the present invention can very accurately guarantee the center of two a pair of magneto sensors 11 and 12 center and the small permanent magnet 122 that is magnetized, and magneto sensor 11 and 12 can obtain equal magnetic flux.Simultaneously, also can produce gradient slightly though make bonding process because adopted permanent magnet material 111 to be bonded in 1 this adhering method of the method on the thin plate with a plurality of paired magneto sensor 11 and 12 that is processed to form, but 1 thin plate that diameter 50mm is above, magneto sensor after the cut-out is only about 1mm, compared with former bonding one by one manufacture method, gradient reduces.Do not have other bonding process on making simultaneously yet, the accumulation of not run-off the straight degree.
By scheming along setting forth specific implementation process of the present invention.The content of setting forth is the manufacture process that the bonding magneto sensor 11 and 12 that is processed to form by etching method forms magnetoelectricity conversion unit on permanent magnet material 111.Shown in Figure 11 is on 1 InSb thin plate, is processed to form a plurality of magneto sensors 11 and 12 by etching method.With bonding on this thin plate with the permanent magnet material 111 usefulness resins 112 that after grinding, have the high depth of parallelism and high surface accuracy.For flatness and the surface accuracy that improves permanent magnet material 111, can take plane lapping processing.In order to improve the electric insulating quality of the anti-sub-prime 11 of permanent magnet material 111 and magnetosensitive and 12, as bonding with resin 112, be with the bonding resin of using more than specific insulation * 1015 Ω cm.As permanent magnet material 111, can keep other permanent magnet materials of fully insulation also passable if select for use at specific insulation * more than the 104 Ω cm, can select the iron-oxygen that specific insulation is high in the permanent magnet material to be used as the permanent magnet material.
Please see after this as Figure 14.Accurately cut along line of cut 32 with cutting machine 141, be divided into a plurality of two a pair of magneto sensors.Because at this moment permanent magnet material 111 is not magnetized, so do not have magnetic sorption problem.Certainly after being cut by the paired hall effect devices that magneto sensor constituted, because do not produce attraction, so permanent magnet material 111 just can not attracted each other yet, magneto sensor 11 and 12 arrangement with cut apart preceding equally can not change, so can not be damaged yet.After cutting off like this is consistent by the center of two a pair of magneto sensors 11 and 12 hall effect devices that constituted and the center of permanent magnet material 111.In addition, the magnetic density that also can see the vertical direction of permanent magnet from Fig. 6 serves as to be symmetrical about axle with the centre distance O of permanent magnet, if the center of two a pair of magneto sensors 11 and 12 center and permanent magnet 21 and the small permanent magnet 122 that is magnetized is consistent, the magnetic flux that magneto sensor 11 and 12 is passed through can be the same, and magneto sensor 11 and 12 also can have almost equal resistance value so.
As shown in figure 15, divided two a pair of magneto sensors 11 and 12 are adhesively fixed on the fixed head 51.Fixed head 51 and be electrically connected with metal wire 152 by two a pair of magneto sensors 11 and 12 hall effect devices that constituted.After this for to make the inboard of shell 151 leave certain spacing, it is fixing that pad 153 is put into the back.The inside of shell 151 encapsulates with epoxy resin 155.Use is magnetized the back as permanent magnet towards the magnetic machine to the small permanent magnet 122 that is fixed on shell 151 the insides.In addition, cut apart at the machine of being cut and separate the back, small permanent magnet 122 is magnetized also can one by one.
The hall effect devices of Zhi Zuoing in this way, every pair of magneto sensor 11 is consistent with the center of the small permanent magnet 122 that is magnetized with 12 center, for every pair of magneto sensor 11 and 12, can pass through equal magnetic flux basically.Simultaneously, need not be as before magneto sensor 11 and 12 and permanent magnet between bonding as the substrate and the plate that between it, also need not be adhesively fixed that make with glass and software ferrite etc. that support magneto sensor, so not parallel 91 the situation that these intermediary's parts bonding produces has not just had yet.Like this, the magneto sensor 11 of the hall effect devices that processes and 12 resistance value are almost equal, thereby make because the fluctuation of the mid-point voltage that variations in temperature causes reduces greatly.
To sum up, of the present invention a kind of with changes of magnetic field the manufacture method of the hall effect devices of resistance change, can reduce following steps:
1, the InSb thin plate is processed to form a plurality of magneto sensor groups 11 and 12;
2, with above-mentioned a plurality of magneto sensor groups 11 and 12 and unmagnetized permanent magnet material 111 usefulness resins 112 bonding;
3, magneto sensor 11 and 12 is cut off together with permanent magnet material 111;
4, the single permanent magnet material 111 of each piece after cutting off is magnetized become permanent magnet 122;
5, divided magneto sensor group 11 and 12 is adhesively fixed on the fixed head 51 together with permanent magnet 122;
6, be electrically connected with 152 pairs of fixed heads 51 of metal wire and magneto sensor group 11 and 12;
7, pad 153 is put into and fixed;
8, use the inside of epoxy resin 155 package casings 151.
5 hall effect devices making of the technology of the present invention (invention _ no1～no5) and with 5 hall effect devices of prior art making (aging method _ no1～no5), each all presses the bridge circuit that Figure 16 constitutes, measure its unbalance voltage, test result as shown in figure 17.(aging method _ no1～no5) compare, (unbalance voltage of invention _ no1～no5) is little, has proved that every pair of magneto sensor 11 is approaching consistent with 12 resistance value for the transducer of making of the present invention with the hall effect devices of making of prior art.
In addition, 5 hall effect devices to making of the present invention (the present invention _ no1～no5) and 5 hall effect devices (aging method _ no1～no5) all put in the environmental experiment device that makes of prior art, change the environmental experiment temperature, each hall effect devices is all measured the change of unbalance voltage by bridge circuit shown in Figure 16, its result as shown in figure 18.((the present invention _ no1～no5) compare, (the present invention _ no1～no5) variable quantity of temperature variant unbalance voltage is little for 5 transducers making of the present invention for aging method _ no1～no5) and the hall effect devices of making of the present invention for the hall effect devices of making of prior art.Changing value with variation of temperature, its mid-point voltage is little as can be seen from this result, understands superiority of the present invention.
In addition, about by two a pair of magneto sensors 11 and 12 and the distance of the small permanent magnet 122 that is magnetized, the present invention more much smaller than former, so permanent magnet 21 need not use the permanent magnet material of the high surface magnetic flux metric density of high price.Simultaneously, because two a pair of magneto sensors 11 are consistent with the center of the small permanent magnet 122 that is magnetized with 12 center, use little permanent magnet, magneto sensor 11 and 12 also can obtain equal magnetic flux.Also have, in order to reduce manufacturing process, providing also of the hall effect devices small-sized, that precision is high, price is low will become possibility.
The hall effect devices of making of the present invention purposes is the most widely discerned the magnetic printing figure exactly, and so-called magnetic printing is exactly the printing of carrying out with the printing ink of being furnished with magnetic, and our modal at one's side magnetic printing thing is a bank note, as yen, dollar, people unit etc.But attachment is considerably less on the magnetic printing thing, thus can't adsorb a piece of paper coin with magnet, and general naked eyes can't discern whether be attached with magnetic on the printed article.Hall effect devices with the present invention's making, when magnetic printing pass through the detection faces of MR transducer the time, the voltage waveform of the output of MR transducer promptly changes, though the magnetic on the magnetic printing thing is very small, the MR transducer can be known to such an extent that ground detects.
With the hall effect devices that the present invention makes, the MR sensor is to be made by the InSb single crystals, and sensitivity height, SN also have following advantage simultaneously than good:
Subject needn't also can detect by the close contact sensor;
The translational speed of output voltage values and magnetic is irrelevant;
Tested section is pure resistance, resists to induce interference performance strong;
Volume is little, and is easy for installation.
Claims (10)
1, a kind of hall effect devices that resistance value changes with changes of magnetic field, comprise magneto sensor, permanent magnet, fixed head and shell, it is characterized in that: described magneto sensor is a pair of magneto sensor group, and described magneto sensor group tightly is bonded in the permanent magnet top by resin; Described magneto sensor group and permanent magnet are bonding and be fixed on fixed head top.
2, a kind of hall effect devices according to claim 1, it is characterized in that: described magneto sensor can adopt the indium antimonide material, and described fixed head is a circuit board.
3, a kind of hall effect devices according to claim 1 and 2, it is characterized in that: described hall effect devices also comprises pad, described pad is placed on the both sides of described magneto sensor group, keep suitable spacing with the magneto sensor group, described pad lower end is fixed on the fixed head, the upper end supporting housing.
4, a kind of hall effect devices according to claim 3, it is characterized in that: described fixed head and magneto sensor are electrically connected by metal wire, and the other end of the metal wire of described fixed head is drawn from the hall effect devices below.
5, a kind of hall effect devices according to claim 1 and 2, it is characterized in that: the inside of shell encapsulates with epoxy resin.
6, a kind of with changes of magnetic field the manufacture method of the hall effect devices of resistance change, it is characterized in that:
Comprise following steps:
1. indium antimonide material InSb thin plate is processed to form the right magneto sensor groups of forming more;
2. with above-mentioned form right magneto sensor group and the resin bondings of unmagnetized permanent magnet material more;
3. a plurality of two a pair of magneto sensors are cut off together with the permanent magnet material;
4. the single permanent magnet material of each piece after cutting off is magnetized and become permanent magnet;
5. divided paired magneto sensor group is adhesively fixed on the fixed head together together with permanent magnet.
7, the manufacture method of hall effect devices according to claim 6 is characterized in that: described permanent magnet material has the high depth of parallelism and high surface accuracy after grinding.
8, according to the manufacture method of claim 7 or 8 described hall effect devices, it is characterized in that: the described bonding resin of using is the above bonding resin of using of specific insulation * 1015 Ω cm.
9, according to the manufacture method of claim 7 or 8 described hall effect devices, it is characterized in that: described permanent magnet material is the high iron-oxygen of specific insulation.
10, the manufacture method of hall effect devices according to claim 7 is characterized in that:
Also comprise the steps:
6. with metal wire fixed head and magneto sensor group are electrically connected;
7. pad is put into and fixed: described pad is placed on the both sides of described magneto sensor group, keeps suitable spacing with the magneto sensor group, and described pad lower end is fixed on the fixed head, the upper end supporting housing;
8. with the inside of the described shell of epoxy encapsulation, described shell is a metal-back.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2003075197A JP2004288666A (en) | 2003-03-19 | 2003-03-19 | Magnetoelectric transducer |
| JP200375197 | 2003-03-19 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1532958A CN1532958A (en) | 2004-09-29 |
| CN100541851C true CN100541851C (en) | 2009-09-16 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB2004100065981A Expired - Fee Related CN100541851C (en) | 2003-03-19 | 2004-03-11 | Hall effect devices and manufacture method thereof |
Country Status (2)
| Country | Link |
|---|---|
| JP (1) | JP2004288666A (en) |
| CN (1) | CN100541851C (en) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4298691B2 (en) | 2005-09-30 | 2009-07-22 | Ｔｄｋ株式会社 | Current sensor and manufacturing method thereof |
| US8124425B2 (en) * | 2007-02-27 | 2012-02-28 | Renesas Electronics Corporation | Method for manufacturing magnetic memory chip device |
| CN101887107A (en) * | 2010-05-13 | 2010-11-17 | 江苏大学 | Magnetoelectric magnetic field sensor and manufacturing method thereof |
| CN104157068A (en) * | 2013-05-14 | 2014-11-19 | 北京嘉岳同乐极电子有限公司 | Magnetic sensor |
| CN105470383A (en) * | 2015-12-31 | 2016-04-06 | 江苏森尼克电子科技有限公司 | Magnetic-sensitive device with pre-embedded electrode and manufacturing process |
| DE102022105706A1 (en) | 2022-03-10 | 2023-09-14 | Infineon Technologies Ag | Magnetic field sensor with mechanically protected permanent magnet |
-
2003
- 2003-03-19 JP JP2003075197A patent/JP2004288666A/en active Pending
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2004
- 2004-03-11 CN CNB2004100065981A patent/CN100541851C/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
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| JP2004288666A (en) | 2004-10-14 |
| CN1532958A (en) | 2004-09-29 |
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