CN100541775C - 一种低温冷平台与室温外壳之间的引线结构及方法 - Google Patents
一种低温冷平台与室温外壳之间的引线结构及方法 Download PDFInfo
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Abstract
本发明公开了一种低温冷平台与室温外壳之间的引线结构及方法,它适用于对红外探测器芯片的杜瓦封装。本发明的引线结构包括红外探测器的安装衬底1、引线电路2、冷平台3、引线环4、杜瓦外壳5和低热导率的金属引线6。通过在安装衬底、引线电路、引线环、金属引线制备和连接上引入特定的处理方法,来实现了低温冷平台与室温外壳之间的引线结构,本发明实现了低温冷平台与室温外壳之间高通用、高气密的电学和真空连接,有利于微型红外探测器杜瓦组件的寄生热负载降低和长真空寿命的获得,同时引线连接点可承受高速率变化的高低温冲击,具有较高的可靠性。
Description
技术领域
本发明涉及红外探测器微型杜瓦的封装技术,具体指一种红外探测器微型杜瓦的低温冷平台与室温外壳之间的引线结构及方法。
背景技术
红外探测器在航天、航空红外领域有着广泛的应用。随着波长向长波扩展和探测灵敏度的提高,红外探测器必须在深低温下才能工作。由于机械制冷具有结构紧凑、体积小、重量轻、制冷量大、制冷时间短、制冷温度可控范围大等优点,目前该类探测器在空间应用中大多采用机械制冷方式,这样也使得其应用时大多采用杜瓦封装,形成红外探测器杜瓦组件。它的技术指标中有低的热负载和长的真空寿命。
从国内外的介绍看,红外探测器微型杜瓦的低温冷平台与室温外壳之间的引线方法,主要有如下几种:
(1)采用柔性聚酰亚胺薄膜引线带,与探测器基板设有安装固定机构,与外壳采用接插件和O型密封圈将信号线引出(参见文献James H.Rutter,Jr G.Scott Libonate,Gence Robillard et al,“Performance of the PV/PC HgCdTeFocal Plane/Dewar Assembly for the Atmospheric Sounder Instrument(AIRS)”,SPIE VOL.3457(1998),)它可以将大量的引线引出,但也存在如下问题:a)O型橡胶圈真空密封存在真空渗透和放气较大的不足,这对杜瓦组件长的真空寿命不利;b)聚酰亚胺的放气率较金属材料高两个数量(文献中没有提到对聚酰亚胺低放气率处理),大面积的薄膜引线带放置在杜瓦内,同样对杜瓦组件长的真空寿命不利;c)薄膜引线带与探测器陶瓷基板和外壳互联需要设置对接机构,使得杜瓦结构复杂;d)在外壳上布置了多个接插件增加了杜瓦的重量。
(2)冷平台支撑柱的材料采用玻璃或塑料材料,在玻璃内预埋可伐丝(参见专利US4565925 Detector dewar with all-Kovar leads,and method ofmaking the same)或通过塑料表面部分金属化产生引线(参见专利EP0154947Dewar Apparatus、US4918312 Dewar Cold finger),其存在如下问题:a)玻璃或塑料放气率较金属材料高,这对杜瓦组件的真空寿命不利;b)无论是预埋可伐材质的金属丝还是部分金属化形成引线,其在与冷平台和外壳之间连接时都需要设置对接机构;c)这种引线方式需要较高的封装技术和成本。
(3)在杜瓦内增加一层电绝缘材料的中间件,在中间件上布置一些金属丝,与探测器基板和外壳连接处都需要安装固定机构和其它引线焊接方法过渡(参见专利US4645931 Detector Dewar Assembly),其存在如下问题:a)使得杜瓦结构复杂化;b)将探测器芯片的信号线引出杜瓦,需要多次焊接连接,降低了可靠性。
(4)传统的方法是通过电烙铁焊接金属引线,将冷平台上的探测器芯片信号线直接穿过室温外壳引到杜瓦,在引线与外壳接触处采用胶接密封,该结构的工艺相对简单,但要得到高的漏率和长的真空寿命较难。
(5)半导体体工艺中常用的引线工艺有超声键合和金丝球焊方法。但它们对金属引线材质种类都有限制,一般多采用硅铝丝和金丝,并且它们对两焊点之间的相对位置有一定限制的。
发明内容
本发明的目的是提供一种红外探测器微型杜瓦的低温冷平台与室温外壳之间的引线结构及方法,来解决低温冷平台与室温外壳之间高通用、高气密电连接问题,同时又有利红外探测器杜瓦组件寄生热负载的降低和长真空寿命的获得。
本发明的红外探测器微型杜瓦的低温冷平台与室温外壳之间的引线结构如附图1所示,它主要包括:红外探测器的安装衬底1、引线电路2、冷平台3、引线环4、杜瓦外壳5、低热导率的金属引线6。红外探测器的安装衬底1采用蓝宝石或高抛光氮化铝或99氧化铝,通过磁控或离子溅射或蒸发Cr/Au或Cr/Ni/Au工艺在安装衬底1表面形成金属层,再将设计好的电极图案通过光刻和腐蚀的方法形成引线电路2;通过半球形铟头生成方法在引线电路2的外侧引线端201上形成引线电路2上的半球形铟头202后,将带引线电路2的安装衬底1通过胶接固定在冷平台3上;引线环4由可伐合金材质的金属环401、绝缘材料玻璃珠或陶瓷402、可伐合金材质电极针脚或厚膜工艺形成的引线电路内侧引线端403高气密烧结而成,通过半球形铟头生成方法在引线环4的电极针脚(图1中(a)所示)或厚膜工艺形成的引线电路(图1中(b)所示)内侧引线端403上形成引线环4上的半球形铟头404后,将引线环4通过激光焊接或氩弧焊接固定在室温外壳5上;最后通过铟埋引线方法和金属引线6将安装衬底1上的引线电路2与引线环4连接起来,金属引线6采用不同直径不同材质的低热导率的金属引线(如铂、锰铜、康铜、金、镍等等)。
本发明的引线环4可以由两种气密烧结获得,下面分别阐述其结构:
1)玻璃与可伐合金烧结结构(见图1(a)):在可伐合金材质的金属环401根据需要预留若干个孔,在孔中插入可伐材质的电极针脚403,在金属环401与电极针脚403之间填上玻璃珠402实现电学绝缘,再通过高气密烧结工艺获得引线环4。
2)陶瓷与可伐合金烧结结构(见图1(b)):两层陶瓷402的下面一层的上表面上,通过厚膜工艺和金属浆料形成所需要的引线环4上的引线电路403,在引线电路403上再放置一层陶瓷402,来实现两个可伐合金材质的金属环401之间和引线环4上的引线电路403与金属环401之间的电学绝缘,再通过高气密烧结工艺获得引线环4。
本发明对安装衬底1上引线电路2和引线环4上可伐合金材质的电极针脚或厚膜工艺形成的引线电路内侧引线端403的设计有如下原则:1)引线电路2的外侧引线端201和可伐电极针脚或厚膜工艺形成的引线电路内侧引线端403的端面面积S要大于0.25mm2;2)引线电路2的所有外侧引线端子201要与引线环4的电极针脚或厚膜工艺形成的引线电路的内侧引线端403一一对应;
本发明的半球形铟头生成方法如下:
1)通过断电的热的电烙铁和松香在引线电路2的外侧引线端201上处理上高度I约为0.6mm的引线电路2上的半球形铟头202,然后将引线电路2上的半球形铟头202用酒精和去离子水依次清洗并烘干;
2)在引线环4高气密烧结而成后,在电极针脚或厚膜工艺形成的引线电路的内侧引线端403上,按步骤1形成高度I约为0.6mm的引线环4上的半球形铟头404;
本发明的铟埋引线方法如下:
1)在显微镜下用手术刀先将引线电路2上的半球形铟头202的中心切开一槽,槽深不小于0.3mm,将低热导率金属引线6的低温端601插入槽中后,用φ0.5的针将其埋入引线电路2上的半球形铟头202中。操作中手不得接触金属引线6,用镊子夹持;
2)按步骤1将金属引线6的室温端602埋入引线环4上的半球形铟头404。本发明有如下优点:
1)本发明的结构简单,操作方便,无需专门设备;
2)本发明采用了高气密烧结得到的引线环,并将其通过激光焊接或氩弧焊接连接到室温外壳上,漏率优于1×10-11Pa.l/s,克服了O型密封圈真空渗漏和放气较大的不足;
3)本发明对金属引线的材料种类没有要求,可根据需要选用不同直径不同材质的金属引线,具有很高的通用性;
4)本发明对焊点之间的相对位置没有特殊要求,克服了半导体引线超声键合、金丝球焊工艺要求引线材质单一和焊点之间相对位置范围特定的不足;
5)本发明的引线两端连接点可承受的拉力是传统超声键合或金丝球焊的6-7倍,同时连接点采用软金属过渡连接,可承受高速率变化的高低温冲击,具有较高的可靠性。
附图说明
图1((a)、(b))一种低温冷平台与室温外壳之间的引线结构示意图;
图中:1-安装衬底;
2-引线电路;
201-引线电路外侧的引出端;
202-引线电路外侧的引出端上的半球形铟头;
3-低温冷平台;
4-引线环;
401-可伐金属环;
402-绝缘玻璃或陶瓷;
403-引线环上的电极针脚或厚膜工艺形成的引线电路的内测引出端;
404-引线环上的电极针脚或厚膜工艺形成的引线电路内测引出端上的半球形铟头;
5-室温外壳;
6-低热导率的金属引线;
601-低热导率的金属引线的低温端;
602-低热导率的金属引线的室温端。
图2图1(a)中I处的局部放大示意图。
图3图1(b)中I处的局部放大示意图。
具体实施方式
下面结合附图1对本发明的具体实施方式作进一步的详细说明:
实施例1是2000×1元长线列红外探测器微型杜瓦组件,如附图1(a)所示,它的主要实施方法如下:
1)安装衬底1选用0.4mm的蓝宝石,先对其进行清洁处理后通过离子溅射Cr/Au形成金属层,再将设计好的电路图案通过光刻和腐蚀方法,在宝石片上形成引线电路2。在引线电路2上有与引线环4的电极针脚403一一对应的外侧引出端201,其尺寸为0.5mm×1mm;
2)通过断电的热的电烙铁和松香在引线电路2的外侧引线端201上处理上高度约为0.6mm引线电路2上的半球形铟头202,然后将引线电路2上的半球形铟头202用酒精和去离子水依次清洗并烘干;
3)将带有引线电路2的安装衬底1胶接到冷平台3;
4)引线环4由可伐金属环401、绝缘材料的玻璃珠402和可伐材质的电极针脚403高气密烧结而成,可伐材质的电极针脚403的直径为0.8mm,再通过高灵敏检漏筛选,要求其漏率优于1×10-11Pa.l/s。再将电极针脚403按步骤2的处理方法形成高度约为0.6mm的引线环4上的半球形铟头404;
5)将引线环4通过高气密激光焊接固定到杜瓦外壳5上;
6)在显微镜下先用手术刀将引线电路2上的半球形铟头202的中心切开一槽,槽深0.5mm,再将直径为20u铂材质的金属引线6的低温端601插入槽中后,用φ0.5的针将低温端601埋入引线电路2上的半球形铟头202中。操作中手不得接触金属引线6,须用镊子夹持;
7)按步骤6将金属引线6的室温端602埋入引线环4上的半球形铟头404。
以上就完成了2000元长线列红外焦平面探测器微型杜瓦组件内的低温冷平台与室温外壳之间的引线连接,从而使探测器的信号和功能线引到了杜瓦外。
实施例2是320×240面阵红外焦平面探测器微型杜瓦组件,如附图1(b)所示,它的主要实施方法如下:
1)安装衬底1选用0.5mm的氮化铝陶瓷,先对其进行清洁处理后通过离子溅射Cr/Au形成金属层,再将设计好的电路图案通过光刻和腐蚀在宝石片上形成引线电路2。在引线电路2上有与引线环4上厚膜工艺形成引线电路的内侧引线端403一一对应的外侧引出端201,其尺寸为0.5mm×0.5mm;
2)将320×240面阵红外焦平面探测器固定在带引线电路2的安装衬底1上;
3)通过断电的热的电烙铁和松香在引线电路2的外侧引线端201上处理上高度约为0.6mm的引线电路2上的半球形铟头202,(注意:操作中电烙铁的停留时间不得超过30秒),然后在专用夹具上对引线电路2上的半球形铟头202用酒精和去离子水依次清洗,酒精和去离子水不得碰到红外探测器,最后低于50℃真空烘干;
4)将带有引线电路2和红外探测器的安装衬底1胶接到冷平台3;
5)引线环4由可伐材质的金属环401、两层绝缘陶瓷402、厚膜工艺形成的引线电路的内侧引线端403烧结而成,厚膜工艺形成的引线电路的内侧引线端403的尺寸为0.5mm×0.5mm。通过高灵敏检漏筛选,要求其漏率优于1×10-11Pa.l/s。再将厚膜工艺形成的引线电路的内侧引线端403按步骤3的处理方法形成高度约为0.6mm的引线环4上的半球形铟头404;
6)将引线环4通过高气密激光焊接固定到杜瓦外壳5上;
7)在多功能显微镜下用手术刀先将引线电路2上的半球形铟头202中心切开一槽,槽深0.5mm,将直径为30u锰铜材质的金属引线6的低温端601插入槽中后,用φ0.5的针将低温端601埋入引线电路2上的半球形铟头202中。操作中手不得接触金属引线6,用镊子夹持;
8)按步骤7将金属引线6的室温端602埋入引线环4上的半球形铟头404。
以上就完成了320×240面阵红外焦平面探测器微型杜瓦组件内的低温冷平台与室温外壳之间的引线连接,从而使探测器的信号和功能线引到了杜瓦外。
Claims (10)
1.一种红外探测器微型杜瓦的低温冷平台与室温外壳之间的引线结构,它由红外探测器的安装衬底(1)、引线电路(2)、冷平台(3)、引线环(4)、杜瓦外壳(5)、低热导率的金属引线(6)组成,其特征在于:
A.低温端的引线结构:带有引线电路(2)的安装衬底(1)胶接固定在杜瓦的冷平台(3)上,引线电路(2)的外侧引线端(201)上有引线电路(2)上的半球形铟头(202);
B.室温端的引线结构:与杜瓦外壳(5)焊接相连的引线环(4)中的金属环(401)上按直线或圆周方向排列有若干个通过绝缘材料(402)绝缘的引线端(403),在引线端(403)上有引线环(4)上的半球形铟头(404);
C.低温端的引线电路(2)通过连接在引线电路(2)上的半球形铟头(202)和引线环(4)上的半球形铟头(404)之间的金属引线(6)连接到室温端的引线环(4)上。
2.根据权利要求1所述的一种红外探测器微型杜瓦的低温冷平台与室温外壳之间的引线结构,其特征在于:所说的引线电路(2)的外侧引线端(201)的端面面积大于0.25mm2。
3.根据权利要求1所述的一种红外探测器微型杜瓦的低温冷平台与室温外壳之间的引线结构,其特征在于:所说的引线环(4)的引线端(403)的端面面积大于0.25mm2。
4.根据权利要求1所述的一种红外探测器微型杜瓦的低温冷平台与室温外壳之间的引线结构,其特征在于:所说的引线电路(2)上的半球形铟头(202)通过断电的热的电烙铁和松香在引线电路(2)的外侧引线端(201)上制成,它的高度为0.6mm。
5.根据权利要求1所述的一种红外探测器微型杜瓦的低温冷平台与室温外壳之间的引线结构,其特征在于:所说的引线环(4)上的半球形铟头(404)通过断电的热的电烙铁和松香在引线环(4)中的引线端(403)上制成,它的高度为0.6mm。
6.根据权利要求1所述的一种红外探测器微型杜瓦的低温冷平台与室温外壳之间的引线结构,其特征在于:所说的金属引线(6)采用低热导率的铂、锰铜、康铜、金或者镍材料的金属引线。
7.根据权利要求1所述的一种红外探测器微型杜瓦的低温冷平台与室温外壳之间的引线结构,其特征在于:所说的引线环(4)中的引线端(403)是可伐合金材质电极针脚,还可以是由厚膜工艺形成的引线电路。
8.根据权利要求1所述的一种红外探测器微型杜瓦的低温冷平台与室温外壳之间的引线结构,其特征在于:所说的绝缘材料(402)是玻璃珠或陶瓷。
9.根据权利要求1所述的一种红外探测器微型杜瓦的低温冷平台与室温外壳之间的引线结构,其特征在于:所说的引线环(4)中的金属环(401)、绝缘材料(402)和引线端(403)之间通过高气密烧结工艺连接在一起。
10.根据权利要求1所述的一种红外探测器微型杜瓦的低温冷平台与室温外壳之间的引线结构,其特征在于:所说的金属引线(6)与引线电路(2)上的半球形铟头(202)和引线环(4)上的半球形铟头(404)之间用铟埋引线方法连接;所说的铟埋引线方法包括以下步骤:
(a)在显微镜下用手术刀先将引线电路(2)上的半球形铟头(202)的中心切开一槽,槽深不小于0.3mm,用镊子夹持着低热导率金属引线(6)将金属引线(6)的低温端(601)插入槽中后,用φ0.5mm的针将其埋入引线电路(2)上的半球形铟头(202)中;
(b)按步骤(a)方法将金属引线(6)的室温端(602)埋入引线环(4)上的半球形铟头(404)中。
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Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4565925A (en) * | 1983-08-10 | 1986-01-21 | Ford Aerospace & Communications Corporation | Infrared detector dewar with all-Kovar leads, and method of making the same |
CN2322100Y (zh) * | 1998-01-07 | 1999-06-02 | 中国科学院上海技术物理研究所 | 焦平面器件用液氮金属杜瓦 |
CN2837747Y (zh) * | 2005-07-11 | 2006-11-15 | 中国科学院上海技术物理研究所 | 一种用于红外焦平面探测器的微型低温金属杜瓦 |
CN1975295A (zh) * | 2006-12-20 | 2007-06-06 | 昆明物理研究所 | 焦平面探测器成像测试用液氮金属杜瓦 |
CN101144738A (zh) * | 2007-10-31 | 2008-03-19 | 中国科学院上海技术物理研究所 | 一种用于焦平面探测器的低温杜瓦的冷平台的支撑机构 |
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Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4565925A (en) * | 1983-08-10 | 1986-01-21 | Ford Aerospace & Communications Corporation | Infrared detector dewar with all-Kovar leads, and method of making the same |
CN2322100Y (zh) * | 1998-01-07 | 1999-06-02 | 中国科学院上海技术物理研究所 | 焦平面器件用液氮金属杜瓦 |
CN2837747Y (zh) * | 2005-07-11 | 2006-11-15 | 中国科学院上海技术物理研究所 | 一种用于红外焦平面探测器的微型低温金属杜瓦 |
CN1975295A (zh) * | 2006-12-20 | 2007-06-06 | 昆明物理研究所 | 焦平面探测器成像测试用液氮金属杜瓦 |
CN101144738A (zh) * | 2007-10-31 | 2008-03-19 | 中国科学院上海技术物理研究所 | 一种用于焦平面探测器的低温杜瓦的冷平台的支撑机构 |
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