CN100536178C - 一种小体积高亮度氮化镓发光二极管芯片的制造方法 - Google Patents
一种小体积高亮度氮化镓发光二极管芯片的制造方法 Download PDFInfo
- Publication number
- CN100536178C CN100536178C CNB2004100972762A CN200410097276A CN100536178C CN 100536178 C CN100536178 C CN 100536178C CN B2004100972762 A CNB2004100972762 A CN B2004100972762A CN 200410097276 A CN200410097276 A CN 200410097276A CN 100536178 C CN100536178 C CN 100536178C
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- Prior art keywords
- emitting diode
- diode chip
- manufacture method
- electrode
- backlight unit
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 21
- 229910002601 GaN Inorganic materials 0.000 title description 17
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 title description 9
- 238000012360 testing method Methods 0.000 claims abstract description 18
- 238000001704 evaporation Methods 0.000 claims abstract description 16
- 229910052757 nitrogen Inorganic materials 0.000 claims abstract description 15
- 238000005530 etching Methods 0.000 claims abstract description 9
- 238000000137 annealing Methods 0.000 claims abstract description 7
- 238000000227 grinding Methods 0.000 claims abstract description 4
- 238000005520 cutting process Methods 0.000 claims abstract description 3
- 238000000034 method Methods 0.000 claims description 34
- 230000008020 evaporation Effects 0.000 claims description 15
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 12
- 239000007789 gas Substances 0.000 claims description 10
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 8
- 238000002161 passivation Methods 0.000 claims description 7
- MWUXSHHQAYIFBG-UHFFFAOYSA-N Nitric oxide Chemical compound O=[N] MWUXSHHQAYIFBG-UHFFFAOYSA-N 0.000 claims description 6
- 238000001259 photo etching Methods 0.000 claims description 4
- 239000000758 substrate Substances 0.000 claims description 4
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 claims description 3
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 3
- 239000004411 aluminium Substances 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 3
- 230000015572 biosynthetic process Effects 0.000 claims description 3
- 239000000460 chlorine Substances 0.000 claims description 3
- 229910052801 chlorine Inorganic materials 0.000 claims description 3
- 239000011248 coating agent Substances 0.000 claims description 3
- 238000000576 coating method Methods 0.000 claims description 3
- 238000005566 electron beam evaporation Methods 0.000 claims description 3
- 238000010894 electron beam technology Methods 0.000 claims description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 3
- 239000010931 gold Substances 0.000 claims description 3
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 claims description 3
- 239000003595 mist Substances 0.000 claims description 3
- 229910052759 nickel Inorganic materials 0.000 claims description 3
- 238000001020 plasma etching Methods 0.000 claims description 3
- 238000002360 preparation method Methods 0.000 claims description 3
- 229910052594 sapphire Inorganic materials 0.000 claims description 3
- 239000010980 sapphire Substances 0.000 claims description 3
- 229910000077 silane Inorganic materials 0.000 claims description 3
- 239000010936 titanium Substances 0.000 claims description 3
- 229910052719 titanium Inorganic materials 0.000 claims description 3
- FAQYAMRNWDIXMY-UHFFFAOYSA-N trichloroborane Chemical compound ClB(Cl)Cl FAQYAMRNWDIXMY-UHFFFAOYSA-N 0.000 claims description 3
- 239000007772 electrode material Substances 0.000 claims description 2
- 239000000463 material Substances 0.000 claims description 2
- 239000011777 magnesium Substances 0.000 claims 2
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims 1
- 229910052737 gold Inorganic materials 0.000 claims 1
- 229910052749 magnesium Inorganic materials 0.000 claims 1
- 238000005516 engineering process Methods 0.000 description 7
- 239000004065 semiconductor Substances 0.000 description 6
- -1 gallium nitride compound Chemical class 0.000 description 4
- 229910002704 AlGaN Inorganic materials 0.000 description 2
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 description 2
- 229910052748 manganese Inorganic materials 0.000 description 2
- 239000011572 manganese Substances 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- OANVFVBYPNXRLD-UHFFFAOYSA-M propyromazine bromide Chemical compound [Br-].C12=CC=CC=C2SC2=CC=CC=C2N1C(=O)C(C)[N+]1(C)CCCC1 OANVFVBYPNXRLD-UHFFFAOYSA-M 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 230000002308 calcification Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
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Abstract
Description
Claims (9)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CNB2004100972762A CN100536178C (zh) | 2004-11-26 | 2004-11-26 | 一种小体积高亮度氮化镓发光二极管芯片的制造方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
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CNB2004100972762A CN100536178C (zh) | 2004-11-26 | 2004-11-26 | 一种小体积高亮度氮化镓发光二极管芯片的制造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1780003A CN1780003A (zh) | 2006-05-31 |
CN100536178C true CN100536178C (zh) | 2009-09-02 |
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CNB2004100972762A Expired - Fee Related CN100536178C (zh) | 2004-11-26 | 2004-11-26 | 一种小体积高亮度氮化镓发光二极管芯片的制造方法 |
Country Status (1)
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CN (1) | CN100536178C (zh) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI485642B (zh) | 2008-02-26 | 2015-05-21 | Epistar Corp | 光電元件之客製化製造方法 |
CN102945005B (zh) * | 2008-03-04 | 2016-05-18 | 晶元光电股份有限公司 | 一种光电元件的客制化制造方法 |
CN101859837B (zh) * | 2009-04-07 | 2014-05-07 | 江苏璨扬光电有限公司 | 氮化物系半导体发光组件 |
CN101944558B (zh) * | 2009-07-09 | 2012-05-02 | 晶发光电股份有限公司 | 具有钝化层的发光二极管及其制造方法 |
CN101882659A (zh) * | 2010-06-28 | 2010-11-10 | 亚威朗光电(中国)有限公司 | 发光二极管芯片以及发光二极管芯片的制作方法 |
CN101997074A (zh) * | 2010-07-30 | 2011-03-30 | 晶科电子(广州)有限公司 | 一种基于硅基板的led表面贴片式封装结构及其封装方法 |
CN102738326A (zh) * | 2011-04-06 | 2012-10-17 | 南通同方半导体有限公司 | 一种GaN基发光二极管结构及其制作方法 |
CN102354699B (zh) * | 2011-09-30 | 2016-05-25 | 映瑞光电科技(上海)有限公司 | 高压氮化物led器件及其制造方法 |
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2004
- 2004-11-26 CN CNB2004100972762A patent/CN100536178C/zh not_active Expired - Fee Related
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Publication number | Publication date |
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CN1780003A (zh) | 2006-05-31 |
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Denomination of invention: Production of gallium nitride light emitting diode chip with small volume and hight brightness Effective date of registration: 20100910 Granted publication date: 20090902 Pledgee: Bank of Jinzhou, Limited by Share Ltd, Dalian branch Pledgor: Lumei Chip Science and Technology Co., Ltd., Dalian Registration number: 2010990000883 |
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