CN100533659C - Vaccuum processing apparatus - Google Patents

Vaccuum processing apparatus Download PDF

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Publication number
CN100533659C
CN100533659C CNB2007101880691A CN200710188069A CN100533659C CN 100533659 C CN100533659 C CN 100533659C CN B2007101880691 A CNB2007101880691 A CN B2007101880691A CN 200710188069 A CN200710188069 A CN 200710188069A CN 100533659 C CN100533659 C CN 100533659C
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CN
China
Prior art keywords
corner angle
vacuum treatment
door
removal portion
cavity
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Active
Application number
CNB2007101880691A
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Chinese (zh)
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CN101236888A (en
Inventor
曹生贤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Lap Yi Cmi Holdings Ltd
Wonik IPS Co Ltd
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IPS Co Ltd
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Publication of CN101236888A publication Critical patent/CN101236888A/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H01L21/02274—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67763—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations the wafers being stored in a carrier, involving loading and unloading
    • H01L21/67772—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations the wafers being stored in a carrier, involving loading and unloading involving removal of lid, door, cover
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Drying Of Semiconductors (AREA)
  • ing And Chemical Polishing (AREA)
  • Plasma Technology (AREA)

Abstract

The invention discloses a vacuum processing device for implementing the etching or deposition process on a liquor crystal device (LCD) panel or wafer such as a glass substrate. The vacuum processing device comprises: a processing space formed inside the device for the vacuum process, and a gate formed at one side or more than one sides of the cavity for placing and picking up the substrate from the cavity; the side of cutting the gate is opposite to at least a potion of the edges and corners of the processing space; a edges and corners removing potion is formed on at least a potion of a side of the processing space on the side of the gate.

Description

Vacuum treatment installation
Technical field
The present invention relates to vacuum treatment installation, specifically, relate to a kind of vacuum treatment installation that liquid crystal (LCD) panel or wafer are carried out etching or deposition processes on such as glass substrate that is used for.
Background technology
Vacuum treatment installation by installing electrodes in the cavity of handling interior volume formation, thereby forms plasma under vacuum state the electrode power supply in handling the space, the substrate surface that is installed on the electrode is carried out etching or deposition processes.
Fig. 1 is the cutaway view of traditional vacuum treatment installation, and Fig. 2 is the curve chart that shows by vacuum treatment installation etching substrate speed among Fig. 1.
As shown in Figure 1, traditional vacuum treatment installation comprises that its inside has the cavity 10 of handling space S, and a side of cavity 10 is formed for carrying out the door 15 that vacuum treated substrate is come in and gone out.Also have, above-mentioned cavity is equipped with upper electrode 13 and lower electrode 14 for form plasma in handling the space in above-mentioned cavity 10.
In above-mentioned traditional vacuum treatment installation, when one of them power supply of giving upper electrode 13 or lower electrode 14 and during another ground connection, in handling space S, form plasma, then, on the surface of substrate 1, carry out the vacuum treatment of deposition or etching by isoionic free radical (radical) etc.
In addition, the chrominance section among Fig. 1 is near the electric field that simulation forms door 15, produces unsettled electric field as can be known near door 15, and Fig. 2 has shown that the etching rate when traditional vacuum treatment installation is carried out vacuum treatment to substrate 1 distributes.According to Fig. 2, etching rate is higher relatively near door 15 as can be known.
That is to say, handle the pressure distribution of gas, gas, ion, free radical (radical) etc. emit (discharge) and reaction speed, the density of electric field, isoionic density, Temperature Distribution etc. all can be formed on the influence of above-mentioned cavity 10 1 side doors 15.15 pairs of substrates 1 of door have very big influence in the uniformity of carrying out as in the vacuum treatment of deposition or etching.
Particularly, along with vacuum treated substrate 1 large tracts of landization, have firing frequency (RF) or direct current (DC), exchange (AC) energy, and standing wave effect and skin effect can take place traditional vacuum treatment installation, therefore door will increase vacuum treated influence.Further, substrate 1 has higher etching rate than other parts near door 15, and unevenness is increased.Thereby make the vacuum treatment performance improvement have difficulty.
Summary of the invention
For addressing the above problem, the purpose of this invention is to provide and a kind of door is reduced to minimum to the influence in the vacuum treatment of substrate, and carry out stable vacuum treated vacuum treatment installation.
According to purpose disclosed by the invention, in order to obtain the advantage of these and other, the invention provides a kind of vacuum treatment installation, comprise: portion is formed for vacuum treated processing space within it, and be formed on cavity one side or more sides and be used for substrate is put into the door that takes out cavity, wherein, form corner angle removal portion at least a portion corner angle of above-mentioned processing space one side facing of door by at least a portion of excision door facing to the corner angle of handling the space.
It is plane or curved surface that above-mentioned corner angle are removed cage structure, also can be covered with the liner of the identical material of above-mentioned cavity.And above-mentioned corner angle removal portion is formed on the liner that is installed on the above-mentioned cavity inner wall.
Preferably, above-mentioned excision corner angle part is that datum-plane direction distance and vertical direction distance are 10mm～100mm with corner angle.
Above-mentioned purpose, feature, aspect and advantage with other disclosed by the invention will become clearer from the detailed description below in conjunction with accompanying drawing.
Description of drawings
Fig. 1 is the profile of traditional vacuum treatment installation;
Fig. 2 is by the etching rate scatter chart of vacuum treatment installation among Fig. 1 to substrate;
Fig. 3 is the profile of vacuum treatment installation of the present invention;
Fig. 4 A-4C is the profile of the improvement example of corner angle removal portion among Fig. 3;
Fig. 5 is the horizontal direction distance of corner angle removal portion in Fig. 3 vacuum treatment installation and the vertical direction curve chart apart from electric field;
Fig. 6 be among Fig. 3 vacuum treatment installation to the distribution map of the etching rate of substrate.
Embodiment
Below in conjunction with accompanying drawing vacuum treatment installation of the present invention is elaborated.
Fig. 3 is the profile of vacuum treatment installation of the present invention, and Fig. 4 a to 4c is the profile of the improvement example of excision corner angle part among Fig. 3.
As shown in Figure 3, vacuum treatment installation of the present invention is included in its inside and is formed for vacuum treated processing space S, and a side is formed for the cavity 100 of the door 150 of substrate 1.
Above-mentioned cavity 100 can be made into multiple shape and structure according to different mounting conditions and design, forms upper chamber 110 and the lower cavity 120 of handling space S by mutually combining and forms.
Have in the above-mentioned cavity 100: form isoionic upper electrode 130 and lower electrode 140; Keep the gas extraction system (not shown) of vacuum treated pressure condition to handling space S, in handling the space, inject the gas supply system (not shown) of handling gas etc. for carrying out vacuum treatment.
In addition, a shower nozzle and above-mentioned upper electrode 130 form one, so that the processing gas that gas supply system is supplied with is injected into the processing interior volume, above-mentioned lower electrode 140 can be installed in support by on the substrate support platform of vacuum treated substrate 1.
On cavity 100 sidewalls, form door 150,, substrate 1 is transplanted on substrate 1 on the substrate support platform from the outside when the outside is transferred or carried out vacuum treatment from the substrate support platform so that after in above-mentioned processing space S, carrying out vacuum treatment.At this moment, around the outer door 150 of above-mentioned cavity 100 family of power and influence (not shown) who is used for switch door 150 is installed, is used for the encapsulation process space S.
And, for prevent that above-mentioned door 150 from exerting an influence to the density of electric field etc. when carrying out vacuum treatment, as shown in Figure 3, door provides a corner angle removal portion 151, this corner angle removal portion 151 forms corner angle removal portion by at least a portion facing to the corner angle of handling the space of excision door facing of door 150 at least a portion corner angle of above-mentioned processing space S one side.
Preferably, above-mentioned corner angle removal portion 151 be formed on door 150 in the face of on whole corner angle of above-mentioned processing space S one side.
By multiple processing methods such as cut, opposite house 150 in the face of one or more corner angle of above-mentioned processing space S one side excise, form above-mentioned corner angle removal portion 151, as Fig. 4 A and Fig. 4 B as shown in the figure, corner angle removal portion 151 can have plane or curved surface.
When for maintenance/maintenance vacuum treatment installation, when the liner 101 with cavity 100 identical materials is installed on cavity 100 inwalls, the also available liner 151a covering with liner 101 identical materials of above-mentioned corner angle removal portion 151.Above-mentioned corner angle removal portion 151 or liner 101,151a can carry out anodization, so that form the anode of coated mould 151b oxidation on each surface.
Shown in Fig. 4 C, above-mentioned corner angle removal portion 151 can be formed on the liner 101 that is arranged on body of wall 100 inwalls.
Shown in Fig. 4 A to 4C, the above-mentioned corner angle removal portion 151 that preferably forms is that the benchmark distance (Δ X) and the distance (Δ Y) of vertical direction in the horizontal direction equals or bigger than 10mm with corner angle O, more preferably in the scope of 10mm～100mm.
In addition, in an alternative embodiment of the invention, when forming curved surface as the surface of above-mentioned corner angle removal portion 151, curvature R is 10mm or bigger, more preferably in 10mm～100mm scope.
As Δ X, the Δ Y of above-mentioned corner angle removal portion 151 and R during less than 10mm, the influence of 151 pairs of etching rates of corner angle removal portion etc. is very little.Opposite, as Δ X, the Δ Y of above-mentioned corner angle removal portion 151 and R during greater than 100mm, the processing of corner angle removal portion 151 and form can be at textural reduction cavity 100.
Hereinafter, according to of the present invention have comprise corner angle removal portion 151 the door 150 vacuum treatment installations will compare with traditional vacuum treatment installation.
Fig. 5 is the horizontal direction distance of corner angle removal portion of vacuum treatment installation among Fig. 3 and the electric field curve figure of vertical direction distance, and Fig. 6 is the curve chart that vacuum treatment installation among Fig. 3 is distributed to the etching rate of substrate.
Electric field particularly takes place sharply to change near door 150 near cavity inner wall as can be known from Fig. 5, claims that this is edge effect (Edge Effect).Along with the Δ X and the Δ Y increase of corner angle removal portion 151, then the variation of electric field just slowly.That is, at least a portion corner angle in the face of processing space S one side by excision door 150 form corner angle removal portion 151 on door 150, can make the variation of electric field slow.It is many more that the Δ X of corner angle removal portion 151 and Δ Y increase, and the variation of electric field is also just slower.
And colored part is near the electric fields that form the analog gate 150 among Fig. 3, has shown with traditional vacuum treatment installation shown in Figure 1 and has compared, and it is more even to have an electric field that the vacuum treatment installation of the present invention of corner angle removal portion produces.
And Fig. 6 is the curve chart of simulating substrate 1 etching rate when being formed with corner angle removal portion 151.With reference to figure 6, when forming corner angle removal portion 151 on the corner angle at door 150 in the face of processing space S one side, sizable etching rate deviation that reduces on the substrate 1.This moment, Δ X and Δ Y respectively were 30mm.
That is, the vacuum treatment installation according to the present invention form corner angle removal portion 151 on the corner angle in the face of processing space S one side of door 150, but the formation offset of door 150 is handled the asymmetric influence of space S, thereby is formed uniform electric field.That is to say, can form uniform vacuum treatment environment.
Vacuum treatment installation of the present invention forms corner angle removal portion 151 by facing of excision door 150, thereby prevents that electric field from concentrating on concrete part more and high-energy being converted to low-yield at least a portion corner angle of above-mentioned processing space S one side.Thereby ion plasma does not concentrate near the door, and near the high etching rate the door is reduced.Further, make the opposite side of Men Yumen equally form the plasma of the uniformity, have advantages such as uniform etching rate.
In addition, vacuum treatment installation of the present invention forms corner angle removal portion on the corner angle in the face of processing space S one side of door, therefore can carry out vacuum treatment equably in handling the space.
Aforesaid embodiment and advantage only all are preferred, do not limit to of the present invention open.Illustrative is tended in description herein, is not limited to the described scope of claim.More replacements, modification and conversion are very conspicuous for a person skilled in the art.The characteristic of preferred embodiment described herein, structure, method and other features will obtain in addition and/or the preferred embodiment of replacing in conjunction with variety of way.

Claims (5)

1, a kind of vacuum treatment installation is characterized in that, comprising:
Cavity has and is used for vacuum treated processing space, and is formed on cavity one side or more sides are used for substrate is put into the door that takes out cavity;
Wherein, by at least a portion of excision door, form corner angle removal portion at least a portion corner angle of above-mentioned processing space one side facing of door facing to the corner angle of handling the space.
2, vacuum treatment installation as claimed in claim 1 is characterized in that, described corner angle removal portion is for having plane or curved surface.
3, vacuum treatment installation as claimed in claim 1 is characterized in that, described corner angle removal portion is covered by the liner with the identical material of described cavity.
4, vacuum treatment installation as claimed in claim 1 is characterized in that, described corner angle removal portion is formed on the liner that is installed on the above-mentioned cavity inner wall.
5, vacuum treatment installation as claimed in claim 1 is characterized in that, described corner angle removal portion is as the criterion in the horizontal direction with corner angle that distance and vertical direction distance are 10mm～100mm.
CNB2007101880691A 2006-11-24 2007-11-23 Vaccuum processing apparatus Active CN100533659C (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1020060117270 2006-11-24
KR1020060117270A KR100874897B1 (en) 2006-11-24 2006-11-24 Vacuum processing equipment

Publications (2)

Publication Number Publication Date
CN101236888A CN101236888A (en) 2008-08-06
CN100533659C true CN100533659C (en) 2009-08-26

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ID=39663878

Family Applications (1)

Application Number Title Priority Date Filing Date
CNB2007101880691A Active CN100533659C (en) 2006-11-24 2007-11-23 Vaccuum processing apparatus

Country Status (3)

Country Link
KR (1) KR100874897B1 (en)
CN (1) CN100533659C (en)
TW (1) TWI342589B (en)

Also Published As

Publication number Publication date
CN101236888A (en) 2008-08-06
TW200823997A (en) 2008-06-01
KR20080047218A (en) 2008-05-28
TWI342589B (en) 2011-05-21
KR100874897B1 (en) 2008-12-19

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C56 Change in the name or address of the patentee

Owner name: WONIK IPS CO., LTD.

Free format text: FORMER NAME: INTEGRATED PROCESS SYSTEMS LTD.

CP03 Change of name, title or address

Address after: Gyeonggi Do, South Korea

Patentee after: WONIK IPS Co.,Ltd.

Address before: Gyeonggi Do Korea Pyeongtaek

Patentee before: IPS Co.,Ltd.

C41 Transfer of patent application or patent right or utility model
C56 Change in the name or address of the patentee
CP03 Change of name, title or address

Address after: Gyeonggi Do Korea Pyeongtaek paint 78-40 (jije Dong strange street)

Patentee after: Lap Yi Cmi Holdings Ltd.

Address before: Gyeonggi Do, South Korea

Patentee before: WONIK IPS Co.,Ltd.

TR01 Transfer of patent right

Effective date of registration: 20160729

Address after: South Korea Gyeonggi Do Ping Ze Zhenwei Zhenwei group produced 75 road surface

Patentee after: WONIK IPS Co.,Ltd.

Address before: Gyeonggi Do Korea Pyeongtaek paint 78-40 (jije Dong strange street)

Patentee before: Lap Yi Cmi Holdings Ltd.