CN100521150C - Method for reducing sub-micron integrate circuit contact hole resistor - Google Patents
Method for reducing sub-micron integrate circuit contact hole resistor Download PDFInfo
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- CN100521150C CN100521150C CNB2007101355063A CN200710135506A CN100521150C CN 100521150 C CN100521150 C CN 100521150C CN B2007101355063 A CNB2007101355063 A CN B2007101355063A CN 200710135506 A CN200710135506 A CN 200710135506A CN 100521150 C CN100521150 C CN 100521150C
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- silicon dioxide
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- micron
- silicon
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Description
Technology category | 1.5um | 1.2um | 1.0um | 0.8um | 0.6um |
The aperture | 1.5 | 1.2 | 1.0 | 0.8 | 0.6 |
Dielectric thickness | 0.8 | 0.8 | 0.8 | 0.8 | 0.8 |
Wide ratio is indulged in the hole | 0.53 | 0.67 | 0.8 | 1 | 1.33 |
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Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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CNB2007101355063A CN100521150C (en) | 2007-11-16 | 2007-11-16 | Method for reducing sub-micron integrate circuit contact hole resistor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
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CNB2007101355063A CN100521150C (en) | 2007-11-16 | 2007-11-16 | Method for reducing sub-micron integrate circuit contact hole resistor |
Publications (2)
Publication Number | Publication Date |
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CN101159248A CN101159248A (en) | 2008-04-09 |
CN100521150C true CN100521150C (en) | 2009-07-29 |
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Application Number | Title | Priority Date | Filing Date |
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CNB2007101355063A Active CN100521150C (en) | 2007-11-16 | 2007-11-16 | Method for reducing sub-micron integrate circuit contact hole resistor |
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CN (1) | CN100521150C (en) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
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CN102085522B (en) * | 2009-12-04 | 2014-05-14 | 中芯国际集成电路制造(上海)有限公司 | Method for cleaning pipeline sprayed with silicon-containing bottom anti-reflection coating |
CN102479744B (en) * | 2010-11-25 | 2014-02-26 | 上海华虹宏力半导体制造有限公司 | Aluminum pore-filling connection process |
CN104465442B (en) * | 2014-11-28 | 2017-05-24 | 厦门讯扬电子科技有限公司 | Real-time monitoring method of aluminum silicon connecting face in semiconductor manufacturing process |
CN113308676B (en) * | 2021-05-25 | 2023-02-24 | 西安微电子技术研究所 | Cavity treatment method for aluminum-silicon-copper thick metal film physical vapor deposition |
CN113539876B (en) * | 2021-07-16 | 2024-02-13 | 无锡中微晶园电子有限公司 | Method for measuring refractive index of thin film on surface of semiconductor device |
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2007
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CN101159248A (en) | 2008-04-09 |
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C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
EE01 | Entry into force of recordation of patent licensing contract |
Assignee: Fujian Angstrem Semiconductor Co., Ltd. Assignor: Wuxi Zhongwei Microchips Co., Ltd. Contract record no.: 2011350000136 Denomination of invention: Method for reducing sub-micron integrate circuit contact hole resistor Granted publication date: 20090729 License type: Exclusive License Open date: 20080409 Record date: 20110705 |
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C41 | Transfer of patent application or patent right or utility model | ||
TR01 | Transfer of patent right |
Effective date of registration: 20160818 Address after: Room 203, block A, information industrial park, No. 21 Changjiang Road, Wuxi New District, Jiangsu, China Patentee after: Wuxi Zhongwei Microchips Co., Ltd. Patentee after: China Electronics Technology Group Corporation No.58 Research Institute Address before: Room 203, block A, information industrial park, No. 21 Changjiang Road, Wuxi New District, Jiangsu, China Patentee before: Wuxi Zhongwei Microchips Co., Ltd. |