CN100521136C - Wafer grade test module of image sensing wafer and test method - Google Patents
Wafer grade test module of image sensing wafer and test method Download PDFInfo
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- CN100521136C CN100521136C CNB2006101705594A CN200610170559A CN100521136C CN 100521136 C CN100521136 C CN 100521136C CN B2006101705594 A CNB2006101705594 A CN B2006101705594A CN 200610170559 A CN200610170559 A CN 200610170559A CN 100521136 C CN100521136 C CN 100521136C
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Abstract
The invention relates to a wafer test module group which comprises a substrate, an optical layer and a masking layer as well as a plurality of first light holes, a plurality of perforations and a plurality of second light holes separately arranged on the substrate material; the space of the adjacent holes is equal to the induction wafer space of the each adjacent image on the photoelectric structure of the image induction wafer. An optical lens is arranged in each perforation and the optical axis of the each optical lens corresponds to and passes through the center of the first light hole and the second light hole. Therefore, when each second light hole is irradiated by an effective converting light source in a positive direction from the upper of the photoelectric converting device, as long as the image sensing element of an image inductive wafer to be converted on the wafer structure is regulated to be on the imaging plane of the corresponding optical lens and then the photoelectric converting device is in line with the horizontal and vertical position, a wafer testing can be rapidly and effectively completed for the plurality of image inductive wafers on the single wafer structure.
Description
Technical field
The present invention is relevant with the wafer-level test system, is meant especially a kind of the video sensing wafer to be made the test module of wafer-level test and the test mode of application thereof.
Background technology
The electronic component of general silicon wafer process all must carry out the testing electrical property of element in specific process stage, certainly packaging and testing or the preceding attribute test of modularity after processing procedure finishes have been comprised, and under the situation that inter-industry competition is growing more intense, each wafer manufactory more focuses on high efficiency wafer-level test mode, not only can effectively omit the encapsulation procedure of packaging and testing, and can be to main fabrication steps effective works Quality Control pipe, therefore possess perfect wafer-level test system and be each wafer manufactory important engineering.
Especially the electronic product that generally has photographic means as mobile phone, PDA or computer equipment etc., mostly be the video sensing module that modularity is made with the video sensing wafer cooperation optical lens group of integrated circuit manufacture process, when set of lenses images in the circuit running pick-up image and depositing in those electronic products correctly then that cooperates wafer on the video sensing wafer again, therefore the electrical characteristic of video sensing wafer is real is the photoelectric characteristic of high precision, and the wafer-level test engineering of the control of electrical quality so that video sensing wafer is also important relatively in the processing procedure certainly.
Even the wafer-level test of integrated circuit electronic component reaches its maturity, but, the technology that will cooperate the optics sensing can not do fast and optic test engineering accurately each the video sensing wafer on the wafer if, still having perfect wafer-level test system at present to require the electrical measurement quality of video sensing wafer; Indulging has a kind of as shown in Figure 1 existing video sensing wafer test apparatus 1, constituted by a probe 11 and a set of lenses 12, set of lenses 12 is located at the non-test circuit district of probe 11 central authorities, mainly establishing structure 121 by four optical lenses 120 and a lock is formed, lock is established structure 121 and can be fixed each optical lens 120 on probe 11, and can adjust each optical lens 120 and image in optical imagery position on the video sensing wafer to be measured, therefore provide test signal by probe 11 again, then can obtain the video sensing electrical measurement result of 120 corresponding video sensing wafers of each optical lens; But the dimensional structure with integrated circuit manufacture process is seen it, though corresponding to, the actual size of single optical lens 120 can contain several video sensing wafers on the wafer, the video sensing circuit element that right only lens central optical axis corresponds in each wafer just can receive effective optical image, all the other drop on the outer video sensing circuit element of each optical lens 120 central optical axis then can't produce accurate video sensing circuit characteristic, as shown in Figure 2 with general 8 o'clock silicon wafer process, on one wafer nearly five, 60 unit wafers, right this set of lenses 12 only can contain the video sensing wafer (indicating the block of X among the figure) of respective amount on wafer, to do the video sensing electrical measurement to all wafers, need make set of lenses 12 repeat nearly more than ten steps with each optical lens 120 adjustment aligning, not only tool is not ageing for the processing procedure electrical measurement, and will with all optical lenses 120 of accounting for large-size on the ratio with aim at simultaneously than the video sensing circuit element in each unit wafer of microcosmic, more difficult for the control of optics longitude.
Summary of the invention
Therefore, main purpose of the present invention is to be to provide a kind of the video sensing wafer is made the test module of optic test, can be effectively and finish the wafer-level test of video sensing wafer fast.
Take off purpose for before reaching, the wafer-level test system of a kind of video sensing wafer provided by the present invention is to include a from bottom to top folded in regular turn probe, a basic unit, an optical layers and a cover layer of establishing, it is characterized in that, wherein:
This probe is to divide into a detecting area and a circuit region, this detecting area has light peneration, be laid with electronic circuit on this circuit region and be provided with a plurality of probes in contiguous this detecting area, described probe is the metallic conductor with conductivity, survey above-mentioned video sensing wafer in order to contact, the electronic circuit of circuit region and video sensing wafer are electrically conducted;
This basic unit is located on this detecting area, has a plurality of first unthreaded holes, and described first unthreaded hole has light peneration, and the adjacent respectively spacing of this first unthreaded hole is equivalent to the spacing of adjacent each video sensing wafer on the crystal circle structure of above-mentioned video sensing wafer;
This cover layer is located in this basic unit, has a plurality of second unthreaded holes and corresponds respectively to respectively this first unthreaded hole and be provided with, and described second unthreaded hole has light peneration;
This optical layers is located between this basic unit and this cover layer, has a plurality of perforation and corresponds respectively to respectively this first unthreaded hole and be provided with, and respectively is provided with an optical lens in this perforation, and respectively the optical axis of this optical lens can pass through this first and second unthreaded hole.
Wherein this basic unit, this cover layer and this optical layers are that semiconductor silicon material is made.
Wherein this basic unit, this cover layer and this optical layers are that transparent panel is made, and this transparent panel has good light peneration, respectively are provided with an absorbed layer on this basic unit and this cover layer respectively, are for can the light-absorbing thin-film material and the light transmission of not having.
Wherein this absorbed layer lays respectively at the zone beyond second unthreaded hole on last first unthreaded hole of this basic unit regional and this cover layer in addition.
Wherein also be provided with at least one optical layers, respectively the optical axis of corresponding respectively this optical lens is for coaxial between this optical layers.
Wherein respectively the external diameter of this optical lens is equivalent to the aperture of respectively this perforation, and respectively the optical axis of this optical lens is that forward passes through this first and second unthreaded hole.
Wherein aperture that respectively should perforation is greater than the aperture of this first and second unthreaded hole respectively.
Wherein this basic unit reaches and respectively also is provided with a clearance layer between this optical lens, is that correspondence is positioned at respectively this first unthreaded hole periphery.
Wherein this clearance layer is to have adherence, and this clearance layer has a plurality of gap particles, and respectively the diameter of this gap particles is the thickness of this clearance layer.
The invention provides a kind of crystal wafer testing method of video sensing wafer, it is the wafer-level test system that utilizes the described video sensing wafer of claim 1, each video sensing wafer on the same crystal circle structure is carried out optical image induction test, it is characterized in that, include following step:
A, prepare a crystal circle structure that possesses above-mentioned video sensing wafer, each video sensing wafer has an Image Sensor on this crystal circle structure, respectively this Image Sensor and electrically connect at least one testing cushion;
B, this wafer-level test system is placed on this crystal circle structure, the detecting area that makes this probe is to there being a plurality of these Image Sensors;
C, provide a light source, this wafer-level test system top is towards this detecting area and the projection of this crystal circle structure certainly;
D, adjust horizontal relative position and vertical relative spacing between this wafer-level test system and this crystal circle structure, making respectively, effective optical imagery of this optical lens lays respectively on pairing respectively this Image Sensor;
E, with the described probe of this probe electrically connect this detecting area the corresponding respectively testing cushion of this Image Sensor.
Wherein this light source is treated as the visible light of particular range of wavelengths through optically filtering among the step c, exposes to described optical lens then.
Wherein this light source is treated as a directional light through optically filtering among the step c, exposes to described optical lens then, and this directional light is to have kept area identical for irradiation cross section in light path.
It wherein in the steps d spacing of adjusting earlier the wafer plane of the lens primary flat of this optical lens respectively and this crystal circle structure, make optical focal length for each optical lens, horizontal relative position between this wafer-level test system of horizontal adjusting and this crystal circle structure again, make respectively this optical lens with this light-resource fousing on pairing respectively this Image Sensor.
The invention provides a kind of manufacture method of wafer-level test module of video sensing wafer, wherein this wafer-level test module has a basic unit, an optical layers and a cover layer, it is characterized in that, includes following formation step:
A, prepare one first wafer, and be equipped with a plurality of first unthreaded holes on this first wafer, the adjacent respectively spacing of this first unthreaded hole is equivalent to the spacing of adjacent each video sensing wafer on the crystal circle structure of above-mentioned video sensing wafer;
B, prepare one second wafer, and the corresponding respectively center of this first unthreaded hole is respectively equipped with a perforation on this second wafer;
C, prepare a plurality of optical lenses, respectively the external diameter of this optical lens is equivalent to the aperture of respectively this perforation, respectively this optical lens is arranged at respectively in respectively this perforation, and respectively the optical axis of this optical lens is perpendicular to the wafer plane of this second wafer, and respectively the optical axis of this optical lens also passes through the center of this perforation;
D, prepare one the 3rd wafer, and the corresponding respectively center of this first unthreaded hole is equipped with one second unthreaded hole respectively on the 3rd wafer;
E, this basic unit, optical layers and cover layer that step a, c and d are formed respectively are from bottom to top stacked in regular turn, make the optical axis of this optical lens respectively can be corresponding by respectively this first unthreaded hole and second unthreaded hole.
Wherein this first, second and third wafer is that semiconductor silicon material is made.
Wherein aperture that should perforation among the step b is greater than the aperture of this first unthreaded hole respectively.
Wherein behind the step b also the inner edge in described perforation be provided with a clearance layer, correspondence is positioned at respectively this first unthreaded hole periphery, the thickness of this clearance layer is the thickness less than this second wafer, among the step c respectively this optical lens be located on this clearance layer.
Wherein this clearance layer is to have adherence, and this clearance layer has a plurality of gap particles, and respectively the diameter of this gap particles is the thickness of this clearance layer.
Description of drawings
Below, conjunction with figs. is enumerated four preferred embodiments, and in order to composition member of the present invention and effect are described further, wherein used brief description of drawings is as follows, wherein:
Fig. 1 is the top view of existing video sensing wafer test apparatus;
Fig. 2 is the correspondence distribution block that crystal circle structure is measured with existing video sensing wafer test apparatus;
Fig. 3 is the structural perspective of first preferred embodiment provided by the present invention;
Fig. 4 is the online section of structure of 4-4 among Fig. 3;
Fig. 5 is the structural representation of the optic test element that provided of above-mentioned first preferred embodiment;
Fig. 6 is the partial structurtes schematic diagram of second preferred embodiment provided by the present invention;
Fig. 7 is the partial structurtes schematic diagram of the 3rd preferred embodiment provided by the present invention;
Fig. 8 is the combination stereogram of the 4th preferred embodiment provided by the present invention;
Fig. 9 is the device schematic diagram of above-mentioned the 4th test mode that preferred embodiment provides.
Embodiment
See also Fig. 3 to a wafer-level test module 2 that Figure 5 shows that first preferred embodiment provided by the present invention, be that to utilize the used Silicon Wafer in the general semiconductor-based end to make base material integrated and made most optic test element 2a, the dimensional structure of each optic test element 2a is the unit wafer corresponding to the integration process of semiconductor image induction technology, make the spacing of adjacent each optic test element 2a be the spacing of adjacent each video sensing wafer on the crystal circle structure, this wafer-level test module 2 is that a from bottom to top stacked in regular turn basic unit 20 is arranged, one optical layers 30 and a cover layer 40, wherein mode of making of each layer and architectural feature are that details are as follows:
This basic unit 20 is for to make base material with one first wafer 21, be equipped with most first unthreaded holes 22 then, corresponding with the Image Sensor in the video sensing wafer respectively, these first unthreaded hole, 22 back correspondences are projected on each Image Sensor can to make the light forward pass respectively.
This optical layers 30 is for to make base material with one second wafer 31, relative position prior to each first unthreaded hole 22 of correspondence is provided with a perforation 32, respectively be somebody's turn to do the aperture of perforation 32 greater than this first unthreaded hole 22, after the center of respectively this perforation 32 and first unthreaded hole 22 is aimed at mutually second wafer 31 is stacked in this basic unit 20, be coated with one deck clearance layer 33 these perforation 32 inboards respectively in this basic unit 20 again, even coating was formed after this clearance layer 33 was woven into aqueous adhesion by most gap particles 330 with less volumetric ratio, respectively this gap particles 330 has same size structure and the diameter thickness much smaller than second wafer 31, so the height of clearance layer 33 can be determined by the thickness of each gap particles 330, at last on clearance layer 33 respectively in this perforation 32 folder establish an optical lens 34, the thickness of optical lens 34 is also much smaller than the thickness of second wafer 31, so this clearance layer 33 can be adhered and be fixed those optical lenses 34, and those gap particles 330 selected sizes can be used as the respectively main shaft plane position, lens centre of this optical lens 34 of control, and decision light passes effectively place, optical imagery position, these optical layers 30 backs.
This cover layer 40 is for to make base material with one the 3rd wafer 41, be equipped with one second unthreaded hole 42 on the relative position prior to each first unthreaded hole 22 of correspondence, respectively the aperture of this second unthreaded hole 42 is equivalent to this first unthreaded hole 22, make then and after respectively the center of this second unthreaded hole 42 and first unthreaded hole 22 is aimed at mutually the 3rd wafer 41 is stacked on this optical layers 30, so respectively but the central optical axis forward of this optical lens 34 passes respectively this first and second unthreaded hole 22,42 centers also make the aperture of this second unthreaded hole 42 respectively pass the respectively actual aperture size of this optical lens 34 as decision light from each optic test element 2a top forward.
Therefore through then can on this wafer-level test module 2, forming those optic test elements 2a behind the above-mentioned modularity, with reference to Fig. 5, when effective testing light source after each optic test element 2a top forward exposes to this second unthreaded hole 42, by these optical lens 34 light harvestings and pass this first unthreaded hole 22, focus to its imaging plane then, as long as on the crystal circle structure Image Sensor of a video sensing wafer to be measured be adjusted to on should the imaging plane of optical lens 34, again with the level of this wafer-level test module 2 with wafer plane, vertical contraposition unanimity, the Validity Test light source can be simultaneously by on the Image Sensor to the wafer of the corresponding imaging of this optic test element 2a respectively, establish the electrical of each Image Sensor of board spy point as long as utilize general wafer level semiconductor to survey, can finish fast and effective wafer-level test a plurality of video sensing wafers on the single crystal circle structure.
Above-mentioned this first, second and third wafer 21,31,41 matrix structures as this wafer-level test module 2 are the integration process convenience with silicon materials, materials for support degree and opaqueness etc. are for considering, certainly do not limit and select the baseplate material that uses from semiconductor for use, also can second preferred embodiment provided by the invention as shown in Figure 6, for with the base material of the employed transparent panel of general lens module as a wafer-level test module 3, be that a from bottom to top stacked in regular turn basic unit 50 is arranged, one optical layers 60 and a cover layer 70, corresponding to respectively one first, second and third panel 51,61,71 make matrix structure, compared to this wafer-level test module 2 that the foregoing description provided, except the mode of making of this optical layers 60 and the optical layers 30 of element characteristic and this wafer-level test module 2 are as good as, 70 of all the other these basic units 50 and this cover layers can utilize the good light permeability of transparent panel and be the following structure of making:
Production method with general display floater engineering, in this first and the 3rd panel 51, evenly be coated with the black photoresist of the specific thickness of one deck on 71 respectively, for can the light-absorbing thin-film material and the light transmission of not having, through gold-tinted micro-photographing process technology the photoresistance of 34 correspondence positions of those optical lenses is removed, therefore the position of removing is promptly in this first and the 3rd panel 51, form each first and second unthreaded hole 52 that distributes with the matrix kenel on 71 respectively, 72, the material of all the other indwellings is promptly in this first and the 3rd panel 51, form an absorbed layer 53 on 71 respectively, 73, so can be in this first and the 3rd panel 51, corresponding respectively those optical lenses 34 form those first and second unthreaded holes 52 with good light permeability on 71,72.
Therefore this wafer-level test module 3 that present embodiment provided not only has the functional characteristic of this wafer-level test module 2 that above-mentioned first preferred embodiment provided, and can save the step of making of on this first and the 3rd panel 51,71, boring a hole, effectively save the cost that module is made, and the product mass-energy to those optical lenses 34 in this optical layers 60 has better maintaining to avoid being subjected to environmental pollution, for the quality of module engineering so that the more efficiently gain of electrical measurement quality of optical image induction; Certainly on the material behavior of this first, second and third panel 51,61,71 so that each first and second unthreaded hole 52,72 has good light permeability is main, comprise respectively this absorbed layer 53,73, its material category reaches only needs unlikely generation that those optical lenses 34 are produced the optical interference phenomenons on making is handled, or the image noise that non-those optical lenses 34 generations take place is projected to the situation of video sensing wafer, the effect of all attainable costs invention like this.
What deserves to be mentioned is, wafer-level test module provided by the present invention is not limited in single this optical layers 30 as above-mentioned two embodiment, 60 structure, if other optical condition test is considered, also can the 3rd preferred embodiment provided by the invention as shown in Figure 7, by by a wafer-level test module 4 integrated each optic test element 4a that make, be to be folded again one second basic unit 23 that establishes between this optical layers 30 of above-mentioned this wafer-level test module 2 and cover layer 40, one second optical layers 35, one the 3rd basic unit 24 and one the 3rd optical layers 36, wherein this second basic unit 23 and the 3rd basic unit 24 are the identical functions structure with this basic unit 20; This second and third optical layers 35,36 is respectively the optical lens 34 that replaces as this optical layers 30 with second and third optical lens 350,360, respectively the optical axis of corresponding respectively this optical lens 360,350,34 and being positioned on the same axis between this optical layers 36,35,30.
Therefore when effective testing light source after forward above this optic test element 4a exposes to respectively this second unthreaded hole 42, in regular turn by optical lens 360,350,34 light harvestings of each optical layers 36,35,30 and pass this first unthreaded hole 22, focus to its imaging plane then, the wafer contraposition program and the wafer-level test equipment that can cooperate the foregoing description to carry equally, this wafer-level test module 4 is had can be finished fast and effective wafer-level test a plurality of video sensing wafers on the single crystal circle structure.
Other sees also as shown in Figure 8, is a wafer-level test system 5 of the 4th preferred embodiment provided by the present invention, by a probe 80 and one the test module 90 combination so that the crystal circle structure of video sensing wafer is done wafer sort, wherein:
This probe 80 can be divided into a detecting area 801 and a circuit region 802, this detecting area 801 is the hollow out plane of these probe 80 central authorities, about slightly crystal circle structure area size of 1/4th, be laid with electronic circuit on this circuit region 802 and be provided with most probes 81 in contiguous this detecting area 801, the metallic conductor of those probes 81 for having conductivity, and survey above-mentioned video sensing wafer with contact by fine-tuning mobile adjusting mechanism control, the electronic circuit of circuit region 802 and video sensing wafer are electrically conducted.
This test module 90 is located on this detecting area 801, for 801 sizes are integrated has made most optic test elements 900 to should detecting area, respectively Fig. 5 of this optic test element 900 and above-mentioned first preferred embodiment provides respectively that this optic test element 2a has the identical functions structure and equivalent characteristic variations is arranged, so repeat no more in this.
This wafer-level test system 5 is mainly this test module 90 and needs to do to aim at accurately with the wafer of video sensing wafer to be measured when setting up, wafer contraposition program that can similar the foregoing description provided, cooperate device architecture as shown in Figure 9, each video sensing wafer on the same crystal circle structure is carried out optical image induction test, is to have following testing procedure:
A, prepare a crystal circle structure 6 that possesses above-mentioned video sensing wafer, each the video sensing wafer on this crystal circle structure 6 is to have an Image Sensor 6a, respectively this Image Sensor 6a and electrically connect at least one testing cushion 6b;
B, this wafer-level test system 5 is placed on this crystal circle structure 6, make this test module 90 correspond to a fan-shaped block 61 of this crystal circle structure 6 rough 1/4th;
C, provide a testing light source 7, throw towards this test module 90 from these wafer-level test system 5 tops, this testing light source 7 is the directional lights 7 ' for the specific visible wavelength range after handling through optically filtering, its narrower optical frequency scope can reduce light to be influenced through the hue difference that each optical lens 34 of this test module 90 may cause, and also can conveniently control light path with directional light 7 ' by the focus characteristics of each optical lens 34 and do optics adjustment accurately;
The spacing of the wafer plane of d, the lens main shaft plane of each optical lens 34 of adjusting this test module 90 and this crystal circle structure 6 makes the approximately slightly optical focal length of each optical lens 34;
Horizontal relative position between e, this wafer-level test system 5 of horizontal adjusting and this crystal circle structure 6 makes several optical lenses 34 that directional light 7 ' is focused on pairing each Image Sensor 6a;
Vertical relative position between f, this wafer-level test system 5 of HeiFin and this crystal circle structure 6 makes on the Image Sensor 6a in directional light 7 ' institute's projection scope and can get focal imaging the most clearly;
G, adjust those probes 81 on this probe 80, make respectively electrical contact previous step in rapid the testing cushion 6b of each Image Sensor 6a of clear focal imaging;
H, the electronic circuit of this probe 80 and electrical measurement board are electrically connected, receive the optical sensor signal of Image Sensor 6a, therefore finish electrical measurement each Image Sensor 6a in the fan-shaped block 61 of this crystal circle structure 6 by the electrical measurement board;
I, move horizontally this crystal circle structure 6 and make this test module 90 correspond to all the other fan-shaped blocks 62 of 1/4th in addition of this crystal circle structure 6, repeat above-mentioned steps c, therefore finish the electrical measurements of the unit wafer of 1/4th quantity in addition in this crystal circle structure 6 to step h;
J, repeat to finish behind twice of the above-mentioned steps i to this crystal circle structure 6 electrical measurement of all Image Sensor 6a in the two fan-shaped blocks 63,64 in addition.
Therefore this wafer-level test system 5 that present embodiment provided can be after for several times adjustment repeatedly only, can finish accurately and wafer-level test fast the integrated circuit manufacture process wafer of video sensing wafer; This wafer-level test system 5 that certain present embodiment is provided does not limit detecting area 801 sizes of this probe 80, promptly do not limit the number of optic test element 900 in this test module 90, so also not limiting as above-mentioned, the electrical measurement program do not need the adjustment of quadruplication to aim at, only need by the suitableeest layout kenel of adjusting electronic circuit on this probe 80, can adjust the corresponding number that this optic test element 900 is set on the detecting area 801, carry out the electrical measurement to step h simultaneously as above-mentioned step c with Image Sensor 6a number to equal respective amount.
Only, above-described, only be preferable possible embodiments of the present invention, so the equivalent structure that every application specification of the present invention and claim are done changes, ought to be included in the claim of the present invention.
Claims (18)
1, a kind of wafer-level test system of video sensing wafer is to include a from bottom to top folded in regular turn probe, a basic unit, an optical layers and a cover layer of establishing, it is characterized in that, wherein:
This probe is to divide into a detecting area and a circuit region, this detecting area has light peneration, be laid with electronic circuit on this circuit region and be provided with a plurality of probes in contiguous this detecting area, described probe is the metallic conductor with conductivity, survey above-mentioned video sensing wafer in order to contact, the electronic circuit of circuit region and video sensing wafer are electrically conducted;
This basic unit is located on this detecting area, has a plurality of first unthreaded holes, and described first unthreaded hole has light peneration, and the adjacent respectively spacing of this first unthreaded hole is equivalent to the spacing of adjacent each video sensing wafer on the crystal circle structure of above-mentioned video sensing wafer;
This cover layer is located in this basic unit, has a plurality of second unthreaded holes and corresponds respectively to respectively this first unthreaded hole and be provided with, and described second unthreaded hole has light peneration;
This optical layers is located between this basic unit and this cover layer, has a plurality of perforation and corresponds respectively to respectively this first unthreaded hole and be provided with, and respectively is provided with an optical lens in this perforation, and respectively the optical axis of this optical lens can pass through this first and second unthreaded hole.
According to the wafer-level test system of the described video sensing wafer of claim 1, it is characterized in that 2, wherein this basic unit, this cover layer and this optical layers are that semiconductor silicon material is made.
3, according to the wafer-level test system of the described video sensing wafer of claim 1, it is characterized in that, wherein this basic unit, this cover layer and this optical layers are that transparent panel is made, this transparent panel has good light peneration, respectively being provided with an absorbed layer on this basic unit and this cover layer respectively, is for can the light-absorbing thin-film material and the light transmission of not having.
According to the wafer-level test system of the described video sensing wafer of claim 3, it is characterized in that 4, wherein this absorbed layer lays respectively at the zone beyond second unthreaded hole on last first unthreaded hole of this basic unit regional and this cover layer in addition.
According to the wafer-level test system of the described video sensing wafer of claim 1, it is characterized in that 5, wherein also be provided with at least one optical layers, respectively the optical axis of corresponding respectively this optical lens is for coaxial between this optical layers.
According to the wafer-level test system of the described video sensing wafer of claim 1, it is characterized in that 6, wherein respectively the external diameter of this optical lens is equivalent to the aperture of respectively this perforation, respectively the optical axis of this optical lens is that forward passes through this first and second unthreaded hole.
According to the wafer-level test system of the described video sensing wafer of claim 1, it is characterized in that 7, wherein aperture that respectively should perforation is greater than the aperture of this first and second unthreaded hole respectively.
According to the wafer-level test system of the described video sensing wafer of claim 7, it is characterized in that 8, wherein this basic unit reaches and respectively also is provided with a clearance layer between this optical lens, is that correspondence is positioned at respectively this first unthreaded hole periphery.
According to the wafer-level test system of the described video sensing wafer of claim 8, it is characterized in that 9, wherein this clearance layer is to have adherence, and this clearance layer has a plurality of gap particles, respectively the diameter of this gap particles is the thickness of this clearance layer.
10, a kind of crystal wafer testing method of video sensing wafer, it is the wafer-level test system that utilizes the described video sensing wafer of claim 1, each video sensing wafer on the same crystal circle structure is carried out optical image induction test, it is characterized in that, include following step:
A, prepare a crystal circle structure that possesses above-mentioned video sensing wafer, each video sensing wafer has an Image Sensor on this crystal circle structure, respectively this Image Sensor and electrically connect at least one testing cushion;
B, this wafer-level test system is placed on this crystal circle structure, the detecting area that makes this probe is to there being a plurality of these Image Sensors;
C, provide a light source, this wafer-level test system top is towards this detecting area and the projection of this crystal circle structure certainly;
D, adjust horizontal relative position and vertical relative spacing between this wafer-level test system and this crystal circle structure, making respectively, effective optical imagery of this optical lens lays respectively on pairing respectively this Image Sensor;
E, with the described probe of this probe electrically connect this detecting area the corresponding respectively testing cushion of this Image Sensor.
According to the crystal wafer testing method of the described video sensing wafer of claim 10, it is characterized in that 11, wherein this light source is treated as the visible light of particular range of wavelengths through optically filtering among the step c, exposes to described optical lens then.
12, according to the crystal wafer testing method of the described video sensing wafer of claim 11, it is characterized in that, wherein this light source is treated as a directional light through optically filtering among the step c, exposes to described optical lens then, and this directional light is to have kept area identical for irradiation cross section in light path.
13, according to the crystal wafer testing method of the described video sensing wafer of claim 12, it is characterized in that, it wherein in the steps d spacing of adjusting earlier the wafer plane of the lens primary flat of this optical lens respectively and this crystal circle structure, make optical focal length for each optical lens, horizontal relative position between this wafer-level test system of horizontal adjusting and this crystal circle structure again, make respectively this optical lens with this light-resource fousing on pairing respectively this Image Sensor.
14, a kind of manufacture method of wafer-level test module of video sensing wafer, wherein this wafer-level test module has a basic unit, an optical layers and a cover layer, it is characterized in that, includes following formation step:
A, prepare one first wafer, and be equipped with a plurality of first unthreaded holes on this first wafer, the adjacent respectively spacing of this first unthreaded hole is equivalent to the spacing of adjacent each video sensing wafer on the crystal circle structure of above-mentioned video sensing wafer;
B, prepare one second wafer, and the corresponding respectively center of this first unthreaded hole is respectively equipped with a perforation on this second wafer;
C, prepare a plurality of optical lenses, respectively the external diameter of this optical lens is equivalent to the aperture of respectively this perforation, respectively this optical lens is arranged at respectively in respectively this perforation, and respectively the optical axis of this optical lens is perpendicular to the wafer plane of this second wafer, and respectively the optical axis of this optical lens also passes through the center of this perforation;
D, prepare one the 3rd wafer, and the corresponding respectively center of this first unthreaded hole is equipped with one second unthreaded hole respectively on the 3rd wafer;
E, this basic unit, optical layers and cover layer that step a, c and d are formed respectively are from bottom to top stacked in regular turn, make the optical axis of this optical lens respectively can be corresponding by respectively this first unthreaded hole and second unthreaded hole.
15, according to the manufacture method of the wafer-level test module of the described video sensing wafer of claim 14, it is characterized in that wherein this first, second and third wafer is that semiconductor silicon material is made.
According to the manufacture method of the wafer-level test module of the described video sensing wafer of claim 14, it is characterized in that 16, wherein aperture that should perforation among the step b is greater than the aperture of this first unthreaded hole respectively.
17, according to the manufacture method of the wafer-level test module of the described video sensing wafer of claim 16, it is characterized in that, wherein behind the step b also the inner edge in described perforation be provided with a clearance layer, correspondence is positioned at respectively this first unthreaded hole periphery, the thickness of this clearance layer is the thickness less than this second wafer, among the step c respectively this optical lens be located on this clearance layer.
18, according to the manufacture method of the wafer-level test module of the described video sensing wafer of claim 17, it is characterized in that, wherein this clearance layer is to have adherence, and this clearance layer has a plurality of gap particles, and respectively the diameter of this gap particles is the thickness of this clearance layer.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2006101705594A CN100521136C (en) | 2006-12-26 | 2006-12-26 | Wafer grade test module of image sensing wafer and test method |
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| CNB2006101705594A CN100521136C (en) | 2006-12-26 | 2006-12-26 | Wafer grade test module of image sensing wafer and test method |
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| CN102222632B (en) * | 2011-07-07 | 2013-04-24 | 北京思比科微电子技术股份有限公司 | Wafer testing method and device |
| US9239147B2 (en) * | 2012-11-07 | 2016-01-19 | Omnivision Technologies, Inc. | Apparatus and method for obtaining uniform light source |
| CN103558426B (en) * | 2013-11-13 | 2017-02-08 | 上海华力微电子有限公司 | Cross prober card |
| CN105988025A (en) * | 2015-03-20 | 2016-10-05 | 旺矽科技股份有限公司 | Multi-unit test probe card with illumination adjustment mechanism and illumination adjustment method thereof |
| CN106483126B (en) * | 2015-08-27 | 2019-12-24 | 京元电子股份有限公司 | Semiconductor element image testing device and testing equipment thereof |
| KR20210087723A (en) * | 2020-01-03 | 2021-07-13 | 에스케이하이닉스 주식회사 | Probe card and test apparatus having probe card |
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