CN100517692C - Semiconductor color changing luminescent device - Google Patents
Semiconductor color changing luminescent device Download PDFInfo
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- CN100517692C CN100517692C CNB2006100632596A CN200610063259A CN100517692C CN 100517692 C CN100517692 C CN 100517692C CN B2006100632596 A CNB2006100632596 A CN B2006100632596A CN 200610063259 A CN200610063259 A CN 200610063259A CN 100517692 C CN100517692 C CN 100517692C
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- crystal grain
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- reflection
- luminescent device
- color changing
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Abstract
The invention relates to a semiconductor discoloring lighting device, which includes a reflection frame or a reflection seat (1), a reflection cavity (2), a circuit board (3), a semiconductor luminescent crystal grain (4) and an optical discoloring mask (5). The circuit board (3) is embedded in the reflection frame or the reflection seat (1). The optical discoloring mask (5) is connected with the reflection frame or the reflection seat (1). The semiconductor luminescent crystal grain (4) is directly solidified on the circuit board (3). The reflection cavity (2) is positioned between at least one semiconductor luminescent crystal grain (4) and the optical discoloring mask (5) and is used to facilitate non contact between at least one semiconductor luminescent crystal grain (4) and the optical discoloring mask (5). The light colors of the semiconductor luminescent crystal grain (4) and the optical discoloring mask (5) surface are variable and different. The invention has the advantages of simple manufacture process, high efficiency, low cost, even light color and good consistency.
Description
Technical field
The present invention relates to a kind of luminaire, more particularly, relate to a kind of semiconductor color changing luminescent device.
Background technology
In semiconductor light emitting crystal grain photoelectric display field, semiconductor light emitting crystal grain number, character and pattern displaying are favored in a lot of industries, and the scope of application more and more widely.In addition, people are more and more higher to the photochromic requirement of semiconductor luminescent grain, and wish that photochromic variation is more various.Traditional manufacture method is to make bulb at the identical fluorescer of semiconductor light emitting grain surface coating wavelength earlier mostly; Again bulb envelope is become light-emitting device.Semiconductor light emitting crystal grain bulb or module that this composite manufacturing method is made, the manufacturing process complexity, photochromic consistency is poor, and the production cost height is unfavorable for promotion and application.In addition, in case make finish after, can't change promptly that it is photochromic, purposes is single and be difficult to maintenance.
Summary of the invention
The technical problem to be solved in the present invention is, at the above-mentioned manufacturing complexity of prior art, photochromic consistency is poor, purposes is single and be difficult to defectives such as maintenance, and a kind of simple, photochromic even, with low cost and semiconductor color changing luminescent device for ease of maintenaince of making is provided.
The technical solution adopted in the present invention is: a kind of semiconductor color changing luminescent device is provided, comprises reflection box or reflection seat 1, reflection cavity 2, wiring board 3, semiconductor light emitting crystal grain 4 and optic metachromatic cover 5; Described wiring board 3 is inlaid in the bottom surface of described reflection box or reflection seat 1; Described optic metachromatic cover 5 is connected on described reflection box or the reflection seat 1; Described semiconductor light emitting crystal grain 4 is directly solid brilliant on described wiring board 3; Described reflection cavity 2 is used to make noncontact each other between at least one described semiconductor light emitting crystal grain 4 and the described optic metachromatic cover 5 between at least one described semiconductor light emitting crystal grain 4 and described optic metachromatic cover 5; The surperficial photochromic of the photochromic and described optic metachromatic cover 5 of described semiconductor light emitting crystal grain 4 is that change, different.
In semiconductor color changing luminescent device of the present invention, the base material of described optic metachromatic cover 5 is optical grade materials 6 that height is transparent, high temperature resistant, can be coated with seal.
In semiconductor color changing luminescent device of the present invention, the bottom surface of described optical grade material 6 is covered with fluorescer 8.
In semiconductor color changing luminescent device of the present invention, the bottom surface of described optical grade material 6 also is covered with diffusant 7, is used for the point-source of light of semiconductor light emitting crystal grain 4 is diffused into uniform astigmatic source.
In semiconductor color changing luminescent device of the present invention, the bottom surface that described diffusant 7 was coated with or was imprinted on optical grade material 6 separately forms diffusion layer, perhaps with the bottom surface that is coated with or is imprinted on optical grade material 6 after fluorescer 8 mixes simultaneously.
In semiconductor color changing luminescent device of the present invention, the optical wavelength of described fluorescer 8 is an any section in the optical wavelength.
In semiconductor color changing luminescent device of the present invention, the surface of described optical grade material 6 comprises adopts the technology be coated with or print to be coated with, to print thereon inferior light protection layer 11.
In semiconductor color changing luminescent device of the present invention, the optical wavelength of described semiconductor light emitting crystal grain 4 is an any section in the optical wavelength.
In semiconductor color changing luminescent device of the present invention, described optic metachromatic cover 5 is by setting-in, applying or buckle the card mode and be connected on described reflection box or the reflection seat 1.
In semiconductor color changing luminescent device of the present invention, described optic metachromatic cover 5 be shaped as any geometry shape, comprise tabular, hemispherical.
Implement semiconductor color changing luminescent device of the present invention, has following beneficial effect: by wiring board being inlaid in the bottom surface of reflection box or reflection seat, semiconductor light emitting crystal grain is directly consolidated crystalline substance in the circuit board, again add reflection cavity on the semiconductor light emitting crystal grain and on reflection box or reflection seat coated with the optic metachromatic cover, can disposable realization hundreds of, several thousand even several ten thousand different photochromic variations of semiconductor light emitting crystal grain luminous point.Photochromic even and high conformity; Technology is simple, makes the efficient height, low cost of manufacture, for ease of maintenaince; Be fit to scale, industrialization production.
Description of drawings
The invention will be further described below in conjunction with drawings and Examples, in the accompanying drawing:
Fig. 1 is the surperficial cut-away view of semiconductor color changing luminescent device first embodiment of the present invention;
Fig. 2 is the side cut-away view of semiconductor color changing luminescent device first embodiment shown in Figure 1;
Fig. 3 is the surperficial cut-away view of semiconductor color changing luminescent device second embodiment of the present invention;
Fig. 4 is the side cut-away view of semiconductor color changing luminescent device second embodiment shown in Figure 3.
Embodiment
In the present invention, by adding a reflection cavity around at least one semiconductor light emitting crystal grain, and on reflection box or reflection seat, connect an optic metachromatic cover by modes such as setting-in, applying or button cards.Be covered with fluorescer in optic metachromatic cover bottom surface, thus make semiconductor light emitting crystal grain and fluorescer each other noncontact can realize the photochromic variation of semiconductor light emitting crystal grain.Having changed prior art must be by directly just realizing this restriction of photochromic variation at semiconductor light emitting grain surface coating fluorescer.And fluorescer is to be coated with or to be imprinted on the independent optic metachromatic cover, again the optic metachromatic cover is connected to the photochromic variation that can realize semiconductor light emitting crystal grain on reflection box or the reflection seat easily by certain way.Can realize simultaneously the production of extensive industrialization.
As depicted in figs. 1 and 2, in the first embodiment of the present invention, semiconductor color changing luminescent device mainly comprises: reflection box 1, reflection cavity 2, wiring board 3, semiconductor light emitting crystal grain 4 and optic metachromatic cover 5.Described optic metachromatic cover 5 setting-ins or be fitted in the light-emitting area of described reflection box 1; Described wiring board 3 is inlaid in the bottom surface of described reflection box 1; Described semiconductor light emitting crystal grain 4 is directly solid brilliant on described wiring board 3; Between described semiconductor light emitting crystal grain 4 and the described optic metachromatic cover 5 is reflection cavity 2.The acting as of reflection cavity 2 makes noncontact each other between semiconductor light emitting crystal grain 4 and the optic metachromatic cover 5, and the light that semiconductor light emitting crystal grain 4 is sent is more concentrated to be launched effectively.
The base material of optic metachromatic cover 5 is optical grade materials 6 that height is transparent, high temperature resistant, can be coated with seal.The surface of described optical grade material 6 comprises adopts the technology be coated with or print to be coated with, to print thereon black dot matrix grid 10 and inferior light protection layer 11; The bottom surface of described optical grade material 6 is covered with diffusant 7, fluorescer 8 and adhesive 9.
The specific implementation process of first embodiment of the invention is as follows: the blue light semiconductor light emitting crystal grain 4 that with wavelength is 460 ~ 465nm earlier is solid brilliant on wiring board 3, each blue light semiconductor light emitting crystal grain is dot matrix reflection cavity 2 of correspondence respectively, is inlaid in the bottom surface of reflection box 1.Coated on bottom side at optical grade material 6 stamps diffusant 7, and its function is that the point-source of light with chip diffuses into uniform astigmatic source.Be coated with again on the surface of diffusant 7 and stamp the yellow fluorescence agent 8 that wavelength is 460 ~ 465nm.In first embodiment, described diffusant 7 is that the bottom surface that is coated with or is imprinted on optical grade material 6 separately forms diffusion layer.But, described diffusant 7 also can be coated with or be imprinted on the bottom surface of optical grade material 6 more simultaneously with after fluorescer 8 mixes by a certain percentage.The mixed proportion of diffusant 7 and fluorescer 8 can be selected as required.For example, can select the mixed proportion of diffusant 7 and fluorescer 8 is 1: 2.In addition because the price of fluorescer is higher, by mixing after the diffusant, point-source of light diffuse into uniform astigmatic source again with fluorescer generation optical change.So not only can reduce cost but also can change required photochromic.Because in first embodiment, by the light-emitting area of laminating type with optic metachromatic cover 5 applying module reflection box 1.So be coated with seal adhesive 9 at last again.Be coated with earlier on the surface of optical grade material 6 and stamp black dot matrix grid 10, be coated with on its surface again and stamp inferior light protection layer 11.The function of black dot matrix grid 10 is not work or little blackness and gray scale of producing when bright at chip dot matrix light; The function of inferior light protection layer 11 is the surface aesthetic that makes screen, no halation, waterproof, anti-scratch flower.In first embodiment, what optical grade material 6 adopted is high transparent, resistant to elevated temperatures PET sheet.
During practical application, optic metachromatic cover 5 is coated with on the light-emitting area that the one side that is printed on adhesive 9 is fitted in module reflection box 1, makes the color transition point array module.Above-mentioned a plurality of color transition point array modules are assembled into cell board, are combined into the display screen of different size.Energising back blue chip is luminous, and light produces optical change during by the optic metachromatic cover and changes blue light into white light.The power of blue light color chip brightness be can regulate and control by circuit, gray scale and white and black displays effect realized.
As shown in Figure 3 and Figure 4, in the second embodiment of the present invention, the power adaptation seat can be used as the reflection seat 1 of this light-emitting device, and wiring board 3 is inlaid in the reflection seat 1, semiconductor light emitting crystal grain 4 is directly solid brilliant on wiring board 3, is reflection cavity 2 between semiconductor light emitting crystal grain 4 and the optic metachromatic cover 5.In a second embodiment, nine semiconductor light emitting crystal grain 4 in a reflection cavity 2, have been comprised simultaneously.Can strengthen the brightness of light-emitting device like this.Optic metachromatic cover 5 be shaped as hemisphere, be connected on the reflection seat 1 by button card mode.The base material of optic metachromatic cover 5 is optical grade materials 6 that height is transparent, high temperature resistant, can be coated with seal.The bottom surface of optical grade material 6 is covered with diffusant 7 and fluorescer 8.Similar with first embodiment, can earlier diffusant 7 be coated with or be imprinted on optic metachromatic cover 5 inner surfaces separately and form diffusion layer, be coated with or stamp fluorescer 8 again.Also diffusant 7 also can be coated with or be imprinted on optic metachromatic cover 5 inner surfaces more simultaneously with after fluorescer 8 mixes.
On light-emitting device, also can comprise lampshade, make light-emitting device more both artistic and practical.Among second embodiment, on light-emitting device, also comprise a mushroom lampshade.
In addition, the connected mode of optic metachromatic cover and reflection cavity can also take removable securing member, buckle structure or Fastening tenon structure that the optic metachromatic cover is inlaid on the reflection cavity except adopting above-mentioned applying and buckleing the card mode.Edge that also can be by the optic metachromatic cover realizes that with interference fit between the edge of reflection cavity setting-in is connected.
In the present invention, according to actual needs, the optical wavelength of fluorescer 8 can be selected any section in the optical wavelength, and correspondingly, the optical wavelength of semiconductor light emitting crystal grain 4 also can be selected any section in the optical wavelength.Like this,, cooperate the fluorescer of different colours again, just can realize various photochromic transformations and variation by selecting different photochromic semiconductor light emitting crystal grain, photochromic changeful and implementation procedure very easy.
In addition, in the prior art, owing to be to make bulb at the identical fluorescer of semiconductor light emitting grain surface coating wavelength; Again bulb envelope is become light-emitting device.In case wherein one or more semiconductor light emitting crystal grain break down, as blind point or photochromic inconsistent, then need to take apart whole device to keep in repair, process bothers very much.And in the present invention, only need take off the optic metachromatic cover to keep in repair at single semiconductor light emitting crystal grain or single reflection cavity, for example change semiconductor light emitting crystal grain to get final product, simple and convenient quick.
Semiconductor color changing luminescent device of the present invention is by being inlaid in wiring board the bottom surface of reflection box or reflection seat, semiconductor light emitting crystal grain is directly consolidated crystalline substance in the circuit board, again add reflection cavity on the semiconductor light emitting crystal grain and on reflection box or reflection seat coated with the optic metachromatic cover, can disposable realization hundreds of, several thousand even several ten thousand different photochromic variations of semiconductor light emitting crystal grain luminous point.Photochromic even, high conformity; Technology is simple, makes the efficient height, low cost of manufacture, for ease of maintenaince; Be fit to scale, industrialization production.
Claims (10)
1, a kind of semiconductor color changing luminescent device is characterized in that, comprises reflection box or reflection seat (1), reflection cavity (2), wiring board (3), semiconductor light emitting crystal grain (4) and optic metachromatic cover (5); Described wiring board (3) is inlaid in the bottom surface of described reflection box or reflection seat (1); Described optic metachromatic cover (5) is connected on described reflection box or the reflection seat (1); Described semiconductor light emitting crystal grain (4) is directly solid brilliant on described wiring board (3); Described reflection cavity (2) is positioned between at least one described semiconductor light emitting crystal grain (4) and the described optic metachromatic cover (5), is used to make noncontact each other between at least one described semiconductor light emitting crystal grain (4) and the described optic metachromatic cover (5); The surperficial photochromic of the photochromic and described optic metachromatic cover (5) of described semiconductor light emitting crystal grain (4) is that change, different.
2, semiconductor color changing luminescent device according to claim 1 is characterized in that, the base material of described optic metachromatic cover (5) is the optical grade material (6) that height is transparent, high temperature resistant, can be coated with seal.
3, semiconductor color changing luminescent device according to claim 2 is characterized in that, the bottom surface of described optical grade material (6) is covered with fluorescer (8).
4, semiconductor color changing luminescent device according to claim 3 is characterized in that, the bottom surface of described optical grade material (6) also is covered with diffusant (7), is used for the point-source of light of semiconductor light emitting crystal grain (4) is diffused into uniform astigmatic source.
5, semiconductor color changing luminescent device according to claim 4, it is characterized in that, the bottom surface that described diffusant (7) was coated with or was imprinted on optical grade material (6) separately forms diffusion layer, perhaps with the bottom surface that is coated with or is imprinted on optical grade material (6) after fluorescer (8) mixes simultaneously.
6, semiconductor color changing luminescent device according to claim 3 is characterized in that, the optical wavelength of described fluorescer (8) is an any section in the optical wavelength.
7, semiconductor color changing luminescent device according to claim 2 is characterized in that, the surface of described optical grade material (6) comprises adopts the technology be coated with or print to be coated with, to print thereon inferior light protection layer (11).
8, semiconductor color changing luminescent device according to claim 1 is characterized in that, the optical wavelength of described semiconductor light emitting crystal grain (4) is an any section in the optical wavelength.
9, semiconductor color changing luminescent device according to claim 1 is characterized in that, described optic metachromatic cover (5) is by setting-in, applying or buckle the card mode and be connected on described reflection box or the reflection seat (1).
10, semiconductor color changing luminescent device according to claim 9 is characterized in that, described optic metachromatic cover (5) be shaped as any geometry shape.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2006100632596A CN100517692C (en) | 2006-10-23 | 2006-10-23 | Semiconductor color changing luminescent device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2006100632596A CN100517692C (en) | 2006-10-23 | 2006-10-23 | Semiconductor color changing luminescent device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101170101A CN101170101A (en) | 2008-04-30 |
| CN100517692C true CN100517692C (en) | 2009-07-22 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB2006100632596A Expired - Fee Related CN100517692C (en) | 2006-10-23 | 2006-10-23 | Semiconductor color changing luminescent device |
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| Country | Link |
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| CN (1) | CN100517692C (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104101975B (en) * | 2013-04-02 | 2017-08-29 | 台达电子工业股份有限公司 | Fluorometer arrangement and its light-source system being applicable |
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- 2006-10-23 CN CNB2006100632596A patent/CN100517692C/en not_active Expired - Fee Related
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| Publication number | Publication date |
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| CN101170101A (en) | 2008-04-30 |
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Owner name: SHENZHEN CITY QIPUGUANG ELECTRONICS CO., LTD. Free format text: FORMER OWNER: XU XINSHENG Effective date: 20100315 |
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Free format text: CORRECT: ADDRESS; FROM: 518034 ROOM 1202, XINTINGYUAN HUIXUAN, JINGTIAN NORTH STREET, FUTIAN DISTRICT, SHENZHEN CITY, GUANGDONG PROVINCE TO: 518000 3/F, COMPREHENSIVE BUILDING (FENGTAI BUILDING), NEW BUILDING B, AREA 82, BAO'AN DISTRICT, SHENZHEN CITY |
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Effective date of registration: 20100315 Address after: 518000, Shenzhen, Baoan District District 82 new B building complex (Feng Tai Building) on the third floor Patentee after: Shenzhen Chipshow Co., Ltd. Address before: 518034 Guangdong city of Shenzhen province Futian District King Hing Street Court Huixuan room 1202 Patentee before: Xu Xinsheng |
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| C56 | Change in the name or address of the patentee |
Owner name: SHENZHEN CHIP OPTECH CO., LTD. Free format text: FORMER NAME: SHENZHEN CHIPSHOW CO., LTD. |
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| CP03 | Change of name, title or address |
Address after: 518000, Shenzhen, Baoan District Shiyan street, the first community community road, precious stones gem science and Technology Park C building Patentee after: Shenzhen City Qi Puguang electronic Limited by Share Ltd Address before: 518000, Guangdong, Shenzhen Baoan District District 82 new B building complex (Feng Tai Building) on the third floor Patentee before: Shenzhen Chipshow Co., Ltd. |
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| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20090722 Termination date: 20191023 |
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| CF01 | Termination of patent right due to non-payment of annual fee |