CN100517268C

CN100517268C - Nonvolatile memory system, nonvolatile memory device, memory controller, access device, and method for controlling nonvolatile memory device

Info

Publication number: CN100517268C
Application number: CNB2005800124554A
Authority: CN
Inventors: 中西雅浩; 泉智绍; 笠原哲志; 田村和明; 松野公则; 辻田昭一; 前田卓治; 井上信治; 井上学; 外山昌之; 坂井敬介
Original assignee: Matsushita Electric Industrial Co Ltd
Current assignee: Panasonic Holdings Corp
Priority date: 2004-04-20
Filing date: 2005-04-14
Publication date: 2009-07-22
Anticipated expiration: 2025-04-14
Also published as: CN1947100A

Abstract

When a file system control unit (155A) writes file data into a main storage memory (142), by writing the file data and a directory entry in different allocation units, it is possible to easily write files continuously and reduce the number of copying times of the file upon update of the directory entry. Thus, even when using a nonvolatile memory having a physical block size as an erase unit greater than a cluster size, it is possible to improve the write-in performance.

Description

The control method of Nonvolatile memory system, Nonvolatile memory devices, memory controller, access device and Nonvolatile memory devices

Technical field

But the present invention relates to use the Nonvolatile memory devices that possesses the rewriting type nonvolatile memory control method as Nonvolatile memory system, Nonvolatile memory devices, memory controller, access device and the Nonvolatile memory devices of storage medium.

Background technology

But the Nonvolatile memory devices that possesses the rewriting type nonvolatile memory is that its demand of center is increasingly extensive with the semiconductor memory card.And used the Nonvolatile memory system of semiconductor memory card, with digital camera etc. be the center its need increasingly extensive.In the semiconductor memory card the main nonvolatile memory that uses be NAND type flash memory with 16kB (byte) as erase unit.Therefore, the access device that uses semiconductor memory card with 16kB as the management unit that writes, be bunch capacity of the region allocation unit of file data.

Yet in recent years, the range of application of Nonvolatile memory system enlarges, not only as text data or rest image, also as the recording/reproducing system of flow datas such as dynamic image.Follow in this, people expect that flash memory also has the high capacity of the dynamic image that can write down grace time.And expectation cost degradation.Corresponding to these expectations, the someone has proposed erase unit is made as the NAND type flash memory of 128kB or 256kB.But, for writing from the 16kB unit of access device, owing to be that erase unit with NAND type flash memory is that 128kB or 256kB are that unit handles in the memory controller of Nonvolatile memory devices inside, therefore relatively have following shortcoming from the access device aspect, it is more time-consuming promptly with 16kB to be that unit writes.

At this, just be used for managed storage and describe in the file system of the data of Nonvolatile memory devices.File system is the system that the data that are stored in the Nonvolatile memory devices easily can be handled as file.As the existing file system of using, there are FAT file system (details are with reference to non-patent literature 1) or UDF (Universal Disk Format, universal disk format) (details are with reference to non-patent literature 2), NTFS (New TechnologyFile System, New Technology File System) etc.Managed the Nonvolatile memory devices of data by these file system, can be at the equipment room transmitting and receiving data, this is because can the shared file data at the equipment room of decipher identical file system.In file system, it is the sector that the information recording area of record data is divided into minimum access unit, and the set of sector promptly bunch manages, and one or more bunch is managed as file.

Secondly, further specify FAT file system and the existing Nonvolatile memory system that has used the FAT file system.Fig. 1 represents the structure of FAT file system.The file system management zone 600 of Fig. 1 is meant from the zone of the viewed nonvolatile memory that is managed by file system of the access device side of Nonvolatile memory system, is equivalent to be recited as the whole zone or the part zone of user data.LA is a logical address, and it has 0～M-1 logical address.In the FAT file system, existing in order to manage the management information areas 601 in whole file system management zone at the front end in file system management zone, then is the data area 602 of data etc. in the storage file.Management information areas 601 is by Main Boot Record partition table (MBRPT) 603, partition boot sector (PBS) 604, FAT605,606 and 607 formations of root directory item (RDE).

MBRPT603 is that storage is in order to be the part of the information that manages of a plurality of zones that are called as subregion with the file system management Region Segmentation.PBS604 is the part of the management information in subregion of storage.FAT605, the 606th, the part of the physical storage locations of the data that comprised in the expression file.RDE607 stores the file that directly is present under the root directory, the part of directory information.FAT is the important area of the physical storage locations of the data that comprised in the file of expression, therefore, usually at the file system management region memory at two FAT605,606 with identical information, and backed up.

The data that comprised in each bunch storage file are formed by a plurality of bunches of institutes in data area 602.The file etc. of storing more data takies a plurality of bunches and stores data, and the contact between each bunch is to represent with the link information that is stored among the FAT605,606.Use Fig. 2 that the data storage example in the FAT file system is illustrated.Data area 602 is made of regular length block (block) unit that is called as bunch, and each cocooning tool have since 2 ascending order bunch number.The behaviour in service of FAT605,606 each bunches of management and represent between each bunch the link information of contact is made of the FAT item corresponding to each bunch number.The FAT item size, any among being per 1

bunch

12,16,32 these 3 kinds according to the type of FAT file system.In the example of Fig. 2 with 16 situations of expressing 1.Store following any value in the FAT item: next connect bunch bunch number, represent the 0x0000 of this bunch, and represent that this bunch is the terminal 0xFFFF of link for white space.In the example of Fig. 2, in corresponding to

bunches numbers

2,5,7 FAT item, store 0x0000, represent that described 3 bunches is white space.And, in corresponding to bunches numbers 3 FAT item, store 0x0004, in corresponding to bunches numbers 4 FAT item, store 0x0006, in corresponding to bunches numbers 6 FAT item, store 0xFFFF.

Expression bunches numbers

3,4,6 these 3 bunches store after data are cut apart.

Below, use Fig. 3, Fig. 4, Fig. 5 that the example that writes of file data in the FAT file system is described.Fig. 3 is the figure of the processing order that writes of the file data in the expression FAT file system.Fig. 4 is the figure that expression writes an example of directory entry before handling, FAT605,606, data area 602, and Fig. 5 is the figure of an example of directory entry, FAT605,606, data area 602 after expression is handled.In the FAT file system, the part in root directory item 607 or data area 602 stores the directory entry of having stored filename or information such as file size, file attribute.An example of expression directory entry among Fig. 4 (a).File shown in the directory entry, its file is called FILE1.TXT, begin to store file data from bunches numbers 10, and file size is 16000 bytes.1 bunch size of supposition is 4096 bytes among Fig. 4, and takies 4 bunches and come store file data.

Use the processing that writes of Fig. 3 supporting paper data.Writing in the processing of file data, the at first directory entry of reading object file (S801).Secondly, obtain the file starting cluster stored in the directory entry that has read in number, and confirm the reference position (S802) of file data.Then, read FAT605,606, and the reference position of the file data that is obtained begins to review link at FAT605,606 in order from the S802 step, to obtain bunch number (S803) of writing position.Then, whether when writing data, judging needs to redistribute white space (S804) to file.When need not to distribute white space, advance to the processing of S806.When needs distribute white space, on FAT605,606, retrieve white space, and 1 bunch white space is assigned to the end (S805) of file.Then, can write that current reference bunch in corresponding data, be written to (S806) in the data area 602.Then, judge whether writing of all data finishes (S807).When also having data, turn back to the processing of S804.When writing of all data finished, upgrade interior file size of being stored of directory entry or timestamp (time stamp) etc., and write Nonvolatile memory devices (S808).At last FAT605,606 is write Nonvolatile memory devices, finish processing (S809).

Write processing by this document data, when further writing the data of 1k byte among the FILE1.TXT with 16k byte data shown in Figure 4, just becoming the file with 17k byte data shown in Figure 5.So, in the FAT file system, distribute with a bunch unit as the storage area of file data, and the storage data.

Fig. 6 is the module map of existing Nonvolatile memory system.In Fig. 6, Nonvolatile memory system comprises Nonvolatile memory devices 101 and access device 102.Nonvolatile memory devices 101 comprises memory controller 103 and non-volatile main memory 104.Memory controller 103 comprises host interface 111 (interface is recorded and narrated be I/F in the drawings), CPU112, RAM113, ROM114 and control part 115.Host interface 111 be and access device 102 between send to receive the interface of various command, logical address and data.Store the program that is used for control store controller 103 integral body among the ROM114.This program is used RAM113 as the temporary storage area, and moves on CPU112.Control part 115 is that the data storage areas in the control Nonvolatile memory devices 101 is the circuit of primary memory 104.Control part 115 comprises address administration portion 116 and the main memory access portion 117 that manages main memory address.

On the other hand, in Fig. 6, access device 102 is devices that Nonvolatile memory devices 101 is carried out access, and it comprises CPU121, RAM122, ROM123 and slot 124.In ROM123, store the program that is used to control access device 102.This program is used RAM122 as the temporary storage area, and moves on CPU121.Slot 124 is connecting portions of Nonvolatile memory devices 101 and access device 102.Access device 102 sends through slot 124 with Nonvolatile memory devices 101 and receives various command, logical address and data.And then ROM123 comprises application program 125, file system control unit 126 and access control portion 127.

Fig. 7 is the module map of presentation address management department 116.Address administration portion 116 comprises address translation table 132, physical region admin table 133 and table access portion 131.

Fig. 8 A is the key diagram of the physical blocks of expression non-volatile main memory 104, and expression physical blocks size is the example of 16kB.In Fig. 8 A, each physical blocks is made of 32 pages of institutes of page address 0～31.Each page is by being constituted with 1 sectors of data zone shown in the shade (512 byte) and management area (16 byte).

Fig. 8 B is that the physical blocks size is the example of 128kB.In Fig. 8 B, each physical blocks has 128 pages of page address 0～127.Each page has 4 sectors of data zones (2048 byte) and management area (64 byte).The zone that has 512 bytes with 1 sector shown in the shade.Give arrangement numbering 0～3 in the page or leaf to 4 sectors of each page.

Fig. 9 A is the physical blocks size during for 16kB that is illustrated in non-volatile main memory 104, the key diagram of the form of the logical block addresses LBA of 102 pairs of Nonvolatile memory devices 101 appointments of access device.In Fig. 9 A from low level be followed successively by sector number, bunch number.In addition, in the following description be with bunch size be set at 16kB and describe.B19～b5 bunch number is converted into whole 32768 physical blocks address PBA in the primary memory 104 by address translation table 132.Position in addition is then as the whole 32 pages page address in the physical blocks.

Fig. 9 B is the physical blocks size during for 128kB that is illustrated in non-volatile main memory 104, the key diagram of the form of the logical block addresses LBA of 102 pairs of Nonvolatile memory devices 101 appointments of access device.In Fig. 9 B from low level be followed successively by sector number, bunch number, b19～b9 is converted into whole 2048 physical blocks address PBA in the primary memory 104 by address translation table 132.B8～b2 is corresponding to the whole 128 pages page address in the physical blocks.And b1～b0 is corresponding to arranging numbering in the page or leaf.In addition, the capacity of primary memory 104 is made as 2Gbit (256MB).

Figure 10 A is the key diagram of the physical blocks size of the expression primary memory 104 physical management region list 133 during for 16kB, and Figure 10 B is the key diagram of the physical management region list 133 of the physical blocks size of expression primary memory 104 when being 128 kB.In Figure 10 A, Figure 10 B, the address of physical region admin table 133 is corresponding to each physical blocks address PBA of primary memory 104, and with 2 states of storing each physical blocks, i.e. block state (block status).Under 2 systems, the effective block of value 00 expression storage valid data, though but value 01 expression stores data is the invalid block of gibberish, value 10 expression is because the solid error (solid error) on the storage unit (memorycell) etc. and the faulty blocks that can't use, and value 11 is represented the block wiped.

Figure 11 A is the key diagram of the physical blocks size of expression primary memory 104 address translation table 132 during for 16kB, and Figure 11 B is the key diagram of the physical blocks size of expression primary memory 104 address translation table 132 during for 128kB.In Figure 11 A, Figure 11 B, described address is corresponding to the specified logical address LBA of access device 102, be the b19～b5 of logical block addresses LBA shown in Fig. 9 A or the b19～b9 of the logical block addresses LBA shown in Fig. 9 B, and contain physical blocks address PBA at address translation table 132 internal memories.

Operation that should existing Nonvolatile memory system describes.At first, access device 102 with Nonvolatile memory devices 101 formats, constitutes the logical address configuration shown in Figure 12 (a) based on the FAT file system thus.In Figure 12 (a), adjust the size of MBRPT603, and set the multiple that makes its length become bunch size to the management information areas 601 of PBS604, FAT1, FAT2, RDE607.The primary memory 104 of the content of these logical addresses of expression storage among Figure 12 (b), (c), Figure 12 (b) is expression deletion unit, be the configuration when being 16kB of the size of physical blocks PB, Figure 12 (c) is the configuration of the size of expression physical blocks PB when being 128kB.No matter under which kind of situation, data area 602 shown in Figure 1, promptly all consistent with the border of physical blocks PB from the zone that bunch #2 of Figure 12 (a) begins.

On the other hand, by utilizing the initialization process of CPU112, the address administration information 118 of reading primary memory 104 through main memory access portion 117.Thereby, constitute address translation table shown in Figure 7 132 and physical region admin table 133.Omit the related description of other initialization process.

Format by this way and initialization after, access device 102 begins primary memory 104 is carried out access.Below, be treated to its operation of example explanation to write.At first, the access control portion 127 in the access device 102 will write indication and be sent to file system control unit 126.File system control unit 126 is retrieved white space according to FAT605 shown in Figure 1,606, when having white space, writes data in the white space that is obtained.At this moment, 102 pairs of Nonvolatile memory devices of access device 101 transmit write command WCMD, predetermined logical address and data.In Nonvolatile memory devices 101, CPU112 discerns write command WCMD, and control is transferred to control part 115.In control part 115, the logical address that address administration portion 116 is transmitted according to access device 102, decision writes the physical address of destination.In address administration portion 116, the physical blocks of having wiped is retrieved according to physical region admin table 133 by table access portion 131 shown in Figure 7, and this physical blocks is appointed as writes the object block.And then it is that physical blocks address PBA is written on the predetermined logical address location of address translation table 132 that table access portion 131 will write the object block.In addition, generally speaking in the retrieval of 131 pairs of physical blocks of having wiped of table access portion, make to write or wipe not concentrate on the specific physical blocks, that is possess to have and having considered that wearing and tearing adjust the search function of (wear leveling).

Below, the write performance that uses Figure 13 and Figure 14 just to cause greater than a bunch size (16kB) because of the physical blocks size descends and describes.Figure 13 and Figure 14 are expressions, the logical address of the data area in the file system management zone are being carried out writing fashionable, and file data and directory entry are the key diagrams in the physical blocks that how to be written in the primary memory 104.Therefore in addition as shown in figure 12, FAT605, the 606th is written in the management information areas, for easy, omits about FAT605,606 the explanation that writes.Figure 13 represents that the physical blocks size is the situation of 16kB, and Figure 14 represents that the physical blocks size is the situation of 128kB.Express in the drawings in addition, add shade bunch in using bunch, wherein be marked with asterisk bunch in have directory entry.Unblanketed bunch is blank bunch.EA represents continuous white space.Describe with regard to the example that writes file 1 and file 2 these two kinds of file datas.File 1 is by the file that F11 and F12 constituted, and the high bit representation reference number of a document of the numbering of institute's mark, low bit representation write sequence.Equally, file 2 is by the file that F21 and F22 constituted, and the high bit representation reference number of a document of the numbering of institute's mark, low bit representation write sequence.The distribution order of numbering WCMD1～5 expression write command WCMD.Herein, solid arrow represents to write processing, and dotted arrow is represented replication processes.

Write processing when using Figure 13 that the physical blocks size is described as 16kB.File system control unit 126

retrieves bunches

2,4,5,6 as white space, and file data is written in these bunches.F11 write the destination promptly in bunches 2 the next one bunches 3 owing to there has been directory entry, therefore can't write F11 and F12 continuously.That is, need by these two write commands of WCMD1, WCMD2, and the indication that writes of issuing F11 and F12.At first, in order to write F11, access device 102 is distributed to Nonvolatile memory devices 101 with WCMD1.The physical blocks that address administration portion 116 retrieval has been wiped is PBA5 herein, and with it as writing the object block.Then, main memory access portion 117 writes F11 in PBA5.Then, in order to write F12, access device 102 is distributed to Nonvolatile memory devices 101 with WCMD2.The physical blocks that address administration portion 116 retrieval has been wiped is PBA1, and with it as writing the object block.Then, main memory access portion 117 writes F12 on PBA1.Because F11 and F12 write, promptly a series of the writing of file 1 finished, so file system control unit is carried out the renewal indication of directory entry for 126 pairs bunches 3.At this moment, when in PBA22, having had directory entry, read directory entry, and carry out after the renewal of directory entry, on the physical blocks PBA33 that has wiped that address administration portion 116 is retrieved, write the directory entry after being updated from PBA22.

Then, be that F21 and F22 write bunches 5 and bunches 6 respectively with file 2.Bunches 5 and bunches 6 is continuous zone on logical address, therefore only promptly can write with write-once order (WCMD4).Nonvolatile memory devices 101 is accepted WCMD4, and writes F21 and F22 respectively in physical blocks PBA8 that has wiped and PBA55.After this, in PBA41, write directory entry after the renewal.

Secondly, write processing when using Figure 14 that the physical blocks size is described as 128kB.Ranges of logical addresses more than or equal to the physical blocks size on the logical address is defined as allocation units (allocation unit), allocation units size in Figure 14 (AU size) be made as equal the physical blocks size, be 128kB.File on the logical address write handle when being 16kB with the physical blocks size identical, but different with the method that physical blocks is write.At first,

bunches

3 and 7 in using write among the physical blocks PBA5.The processing that writes according to F11 writes F11 in the physical blocks PBA1 that has wiped that address administration portion 116 is retrieved, and the data that will be written among the PBA5 copy among the PBA1.Below similarly physical blocks is write and duplicates according to writing of each file.

Figure 13 and Figure 14 are compared, and when physical blocks size be 16kB, writing indegree was 4 times, and number of copy times is 2 times, and with respect to this, to write indegree during for 128kB be 4 times when physical blocks is big or small, and number of copy times is 19 times.Hence one can see that, and when having used the physical blocks size greater than the nonvolatile memory of bunch size, it is many that number of copy times becomes, and write performance descends.

[non-patent literature 1] ISO/IEC9293, " infotech-information disk volume structure and file structure " (" Information Technology-Volume and file structure ofdisk cartridges for information ", 1994

[non-patent literature 2] OSTA universal disk format specification revision 1.50 (OSTAUniversal Disk Format Specification Revision 1.50), 1997

Summary of the invention

When using the physical blocks size greater than the nonvolatile memory of bunch size, the write performance main reasons for decrease can be compiled and is following 2 points.

1. in 1 allocation units, because file mixes existence with directory entry, therefore becoming is difficult to guarantee to be used to write the continuum of file data, and promptly becoming is difficult to write continuously file data.

2. in 1 allocation units, because file mixes existence with directory entry corresponding to this document, so when directory entry upgrades duplicating of file will be taken place.

Problem of the present invention just is, solves described two write performance main reasons for decrease, and improves the write performance when having used the physical blocks size greater than the nonvolatile memory of bunch size.

The invention provides a kind of Nonvolatile memory system, comprise access device and Nonvolatile memory devices, described Nonvolatile memory devices, it comprises described primary memory and memory controller, described memory controller has host interface, and described Nonvolatile memory devices is connected with affiliated memory storage via described host interface.

The invention provides a kind of Nonvolatile memory system, comprise access device and Nonvolatile memory devices, and according to from the given order of described access device and logical address and described Nonvolatile memory devices is write and read file data, described Nonvolatile memory devices has non-volatile primary memory and memory controller, non-volatile storer that described primary memory is made up of a plurality of physical blocks, the size of described physical blocks greater than as described access device region allocation unit bunch, described memory controller has: address administration portion, according to the physical address that determines described primary memory from the given logical address of described access device; And main memory access portion, according to the address shown in the described address administration portion and described primary memory is carried out access, described access device, by a plurality of bunches and logical address and file control data, and with a plurality of continuous bunch as allocation units, and the amount of capacity of described allocation units is the physical blocks size more than or equal to described primary memory, file data management information and described file data is write different allocation units mutually when writing file data.

The invention provides a kind of Nonvolatile memory devices, by a plurality of bunches and logical address and file control data, and with a plurality of continuous bunch as allocation units, when the log file data, file data management information is write different allocation units with described file data, and the amount of capacity of described allocation units is more than or equal to the physical blocks size, when described file data and described file data management information are write Nonvolatile memory devices, be connected with access device and use, this access device issue can be discerned the write command of described file data and described file control information each other, and according to from the given order of described access device and logical address and write and read file data, described Nonvolatile memory devices has: non-volatile primary memory and memory controller, non-volatile storer that described primary memory is made up of a plurality of physical blocks, the size of described physical blocks greater than as described access device region allocation unit bunch, and described memory controller has: address administration portion, according to the physical address that determines described primary memory from the given logical address of described access device; Main memory access portion is according to the address shown in the described address administration portion and described primary memory is carried out access; And register, keep the data relevant with the capacity of described primary memory.

The invention provides a kind of memory controller, by a plurality of bunches and logical address and file control data, and with a plurality of continuous bunch as allocation units, when the log file data, file data management information is write different allocation units with described file data, and the amount of capacity of described allocation units is more than or equal to the physical blocks size, when described file data and described file data management information are write non-volatile primary memory, be connected with access device and use, this access device issue can be discerned the write command of described file data and described file control information each other, and according to from the given order of described access device and logical address and described primary memory is write and read file data, described primary memory is the non-volatile storer that comprises a plurality of physical blocks, the size of described physical blocks greater than as described access device region allocation unit bunch, and described memory controller has: address administration portion, according to the physical address that determines described primary memory from the given logical address of described access device; Main memory access portion is according to the address shown in the described address administration portion and described primary memory is carried out access; And register, keep the data relevant with the capacity of described primary memory.

The invention provides the control method of the Nonvolatile memory devices in a kind of Nonvolatile memory system, this Nonvolatile memory system comprises access device and Nonvolatile memory devices, and described Nonvolatile memory devices has non-volatile main memory and memory controller, comprise a plurality of physical blocks in the described non-volatile main memory, the size of described physical blocks greater than as described access device region allocation unit bunch, and, described Nonvolatile memory system is according to from the given order of described access device and logical address described Nonvolatile memory devices being write and read file data, by a plurality of bunches and logical address and file control data, and with a plurality of continuous bunch, as the allocation units of capacity more than or equal to the physical blocks size of described primary memory, and when the log file data, file data management information is write different allocation units with described file data; And described memory controller is according to the physical address that determines described primary memory from the given logical address of described access device, when described file data and described file data management information are write described Nonvolatile memory devices, mutually described file data of identification and described file data management information, and according to described primary memory is carried out access and writing in the address shown in the described address administration portion.

The invention provides a kind of access device, Nonvolatile memory devices with primary memory is write and reads file data, described access device is characterised in that, by a plurality of bunches and logical address and file control data, and with a plurality of continuous bunch as allocation units, and the capacity of described allocation units is the physical blocks size more than or equal to described primary memory, file data management information and described file data is write different allocation units mutually when writing file data.

The invention provides a kind of Nonvolatile memory system, comprise described access device and Nonvolatile memory devices, and according to the given order of described access device and logical address and described Nonvolatile memory devices is write and read file data.

The invention provides a kind of Nonvolatile memory devices, be connected on the described access device and use, and according to the given order of described access device and logical address and write and read file data.

The invention provides a kind of memory controller, be connected on the described access device and use, and according to the given order of described access device and logical address and described primary memory is write and read file data.

In order to solve this problem, Nonvolatile memory system of the present invention, comprise access device and Nonvolatile memory devices, and according to from the given order of described access device and logical address and described Nonvolatile memory devices is write and read file data, and, described Nonvolatile memory devices has non-volatile main memory and memory controller, described primary memory is the nonvolatile memory that comprises a plurality of physical blocks, described physical blocks is greater than the region allocation unit of described access device size promptly bunch, described memory controller has: address administration portion, according to the physical address that determines described primary memory from the given logical address of described access device, and main memory access portion, according to the address shown in the described address administration portion and described primary memory is carried out access; And, described access device, by a plurality of bunches and logical address and file control data, and with a plurality of continuous bunch as allocation units, and the amount of capacity of described allocation units is the physical blocks size more than or equal to described primary memory, file data management information and described file data is write different allocation units mutually when writing file data.

Also can be made as, described access device is with described file data management information aggregating and be written in the specific allocation units herein.

Also can be made as herein, described primary memory is the nonvolatile memory that can write afterwards the zone of each physical blocks, and described memory controller has: the 2nd address administration portion is converted to physical sector address with the logical sector address in the described allocation units; And the 2nd main memory access portion, when the described file control information of record, the physical blocks that constitutes allocation units is carried out access according to the sevtor address shown in described the 2nd address administration portion.

Also can be made as, described access device is in order to discern described file data and described file data management information herein, and has at least two kinds of write commands.

Also can be made as, the said write order has parameter herein, and in order to discern described file data and described file data management information, and the parameter of change said write order.

Also can be made as, described memory controller is notified to described access device with the memory span of described primary memory herein, and described access device determines the size of described allocation units according to the memory span of being notified by described memory controller.

Also can be made as, described memory controller is notified to described access device with the physical blocks size of described primary memory herein, and described access device determines the size of described allocation units according to the physical blocks size of being notified by described memory controller.

Also can be made as, described access device only optionally uses and have the fixedly described allocation units of white space in described allocation units herein.

Also can be made as herein, described Nonvolatile memory devices further has and rewrite to guarantee number of times more than described primary memory and nonvolatile secondary storage device that can be erasable, and described memory controller writes described supplementary storage with described file data management information.

Herein, described supplementary storage also can be made as the nonvolatile memory of writing speed faster than described primary memory.

Herein, described supplementary storage also can be made as non-volatile ram.

Herein, described supplementary storage also can be made as ferroelectric RAM (FeRAM, ferroelectric random access memory), magnetic recording formula random access memory (MRAM, magnetic recording type random access memory), phase transition storage (OUM, Ovonic unified memory), a certain among the impedance RAM (RRAM, resistance random access memory).

In order to solve this problem, Nonvolatile memory devices of the present invention, by a plurality of bunches and logical address and file control data, and with a plurality of continuous bunch as allocation units, when the log file data, file data management information is write different allocation units with described file data, and the amount of capacity of described allocation units is more than or equal to the physical blocks size, when described file data and described file data management information are write Nonvolatile memory devices, being connected in issue can discern mutually on the access device of write command of described file data and described file data management information and use, and according to writing and read file data from described access device given order and logical address, and described Nonvolatile memory devices has non-volatile main memory and memory controller, described primary memory is the nonvolatile memory that comprises a plurality of physical blocks, described physical blocks is greater than the region allocation unit of described access device size promptly bunch, and described memory controller has: address administration portion, according to the physical address that determines described primary memory from the given logical address of described access device; Main memory access portion is according to the address shown in the described address administration portion and described primary memory is carried out access; And register, keep the related data of the capacity of described primary memory.

In order to solve this problem, memory controller of the present invention, by a plurality of bunches and logical address and file control data, and with a plurality of continuous bunch as allocation units, when the log file data, file data management information is write different allocation units with described file data, and, the amount of capacity of described allocation units is more than or equal to the physical blocks size, when described file data and described file data management information are write non-volatile main memory, being connected in issue can discern mutually on the access device of write command of described file data and described file data management information and use, and according to from the given order of described access device and logical address and described primary memory is write and read file data, and described primary memory is the nonvolatile memory that comprises a plurality of physical blocks, described physical blocks is greater than the region allocation unit of described access device size promptly bunch, and described memory controller has: address administration portion, according to the physical address that determines described primary memory from the given logical address of described access device; Main memory access portion is according to the address shown in the described address administration portion and described primary memory is carried out access; And register, keep the related data of the capacity of described primary memory.

In order to solve this problem, the control method of Nonvolatile memory devices of the present invention, it is the control method of the Nonvolatile memory devices in the non-volatile memories system, described Nonvolatile memory system comprises access device and Nonvolatile memory devices, and described Nonvolatile memory devices has: non-volatile main memory, comprise a plurality of physical blocks and memory controller, described physical blocks is greater than the region allocation unit of described access device size promptly bunch; And, according to from the given order of described access device and logical address and described Nonvolatile memory devices is write and read file data, and, its by a plurality of bunches with its logical address and file control data, and with a plurality of continuous bunch, as the allocation units of capacity more than or equal to the physical blocks size of described primary memory, and when the log file data, file data management information is write different allocation units with described file data, and described memory controller is according to the physical address that determines described primary memory from the given logical address of described access device, when described file data and described file data management information are write described Nonvolatile memory devices, mutually described file data of identification and described file data management information, and according to described primary memory is carried out access and writing in the address shown in the described address administration portion.

In order to solve this problem, access device of the present invention, Nonvolatile memory devices with primary memory is write and reads file data, and by a plurality of bunches with its logical address and file control data, and with a plurality of continuous bunch as allocation units, and the capacity of described allocation units is more than or equal to the physical blocks size of described primary memory, file data management information and described file data write different allocation units mutually when writing file data.

Among the present invention, file data and directory entry are write different allocation units, therefore becoming is easy to write continuously file data, and can reduce the number of copy times of file when directory entry upgrades.And then the capacity of directory entry is fully less than the physical blocks size, therefore guarantees that by it being write rewrite number of times more than in primary memory and the nonvolatile secondary storage device that can be erasable, just can improve the renewal speed of directory entry.

Description of drawings

Fig. 1 is the structural drawing of FAT file system.

Fig. 2 is the key diagram of the data storage example in the expression FAT file system.

Fig. 3 is the key diagram of the processing order that writes of the file data in the expression FAT file system.

Fig. 4 is the key diagram that writes an example of handling preceding directory entry, FAT605, FAT606, data area 602 in the expression FAT file system.

Fig. 5 is the key diagram of the example that writes directory entry after the processing, FAT605, FAT606, data area 602 in the expression FAT file system.

Fig. 6 is the module map of the existing Nonvolatile memory system of expression.

Fig. 7 is the module map of presentation address management department 116.

Fig. 8 A is the key diagram of the physical blocks of the non-volatile main memory 104 of expression physical blocks when being 16KB.

Fig. 8 B is the key diagram of the physical blocks of the non-volatile main memory 104 of expression physical blocks when being 128KB.

Fig. 9 A is the key diagram of the logical address form of access device 102 pair Nonvolatile memory devices 101 appointments of expression physical blocks when being 16KB.

Fig. 9 B is the key diagram of the logical address form of access device 102 pair Nonvolatile memory devices 101 appointments of expression physical blocks when being 128KB.

Figure 10 A is the key diagram of the physical management region list 133 of expression physical blocks when being 16KB.

Figure 10 B is the key diagram of the physical management region list 133 of expression physical blocks when being 128KB.

Figure 11 A is the key diagram of the address translation table 132 of expression physical blocks when being 16KB.

The key diagram of representing the address translation table 132 when physical blocks is 128KB during Figure 11 B.

Figure 12 is the key diagram of the corresponding relation of presentation logic address configuration and physical blocks.

Figure 13 represents that when physical blocks is 16kB file data and directory entry are the key diagrams in the physical blocks that how to be written in the primary memory 104.

Figure 14 represents that when physical blocks is 128kB file data and directory entry are the key diagrams in the physical blocks that how to be written in the primary memory 104.

Figure 15 is the module map of the Nonvolatile memory system in the expression embodiments of the present invention one.

Figure 16 is that expression file data and directory entry are the key diagrams in the physical blocks that how to be written in the non-volatile main memory 108.

Figure 17 is the module map of the Nonvolatile memory system in the expression embodiments of the present invention two.

Figure 18 is that expression file data and directory entry are how to be written into interior physical blocks of primary memory 143 or the key diagram in the non-volatile ram 162.

Figure 19 is the key diagram of the physical blocks size of expression primary memory 143 structure of physical blocks during for 128kB.

Figure 20 is the module map of the Nonvolatile memory system in the expression embodiments of the present invention three.

Figure 21 is the module map of the structure of first, second control part of expression and its peripheral circuit.

Figure 22 is the figure of an example of presentation address conversion table.

Figure 23 is the key diagram of an example of expression physical region admin table.

Figure 24 is that expression file data and directory entry are the key diagrams in the physical blocks that how to be written in the primary memory 171.

Figure 25 is the figure of recording status that expression is used for the physical blocks of directory entry.

Figure 26 is the figure of recording status that expression is used for the physical blocks of directory entry.

Figure 27 is the logical blocks that is used for data item on the logical address space of expression in this embodiment and the key diagram of physical blocks corresponding to it.

Figure 28 is the logical blocks that is used for data item on the logical address space of expression in this embodiment and the key diagram of physical blocks corresponding to it.

Figure 29 is the logical blocks that is used for data item on the logical address space of expression in this embodiment and the key diagram of physical blocks corresponding to it.

Figure 30 is the logical blocks that is used for data item on the logical address space of expression in this embodiment and the key diagram of physical blocks corresponding to it.

Figure 31 is the logical blocks that is used for data item on the logical address space of expression in this embodiment and the key diagram of physical blocks corresponding to it.

Figure 32 is the logical blocks that is used for data item on the logical address space of expression in this embodiment and the key diagram of physical blocks corresponding to it.

Figure 33 is the logical blocks that is used for data item on the logical address space of expression in this embodiment and the key diagram of physical blocks corresponding to it.

Figure 34 is the key diagram of the configuration process again of the logical physical block in this embodiment of expression.

Figure 35 is the figure of variation of the update time of expression directory entry.

Description of reference numerals

140A, 140B, 140C Nonvolatile memory devices

141A, 141B, 141C memory controller

142 primary memorys

143 registers

144 address administration information

150A, 150B, 150C access device

151 ROM

152 storage device information acquisition units

153 AU size storage list

154 AU size determination section

155A, 155B, 155C file system control unit

161 data identification portions

162 non-volatile rams

171 primary memorys

172 second control parts

173 bus storage parts

174 selector switchs

175 second address administration portions

176 second main memory access portions

177 table access portions

178 address translation table

179 physical region admin tables

Embodiment

(embodiment one)

Figure 15 is the module map of the structure of the Nonvolatile memory system in the expression embodiments of the present invention one.Nonvolatile memory system is made of Nonvolatile memory devices 140A and access device 150A.For the inscape identical, use identical Reference numeral to describe with existing Nonvolatile memory system.In Figure 15, Nonvolatile memory devices 140A comprises memory controller 141A and non-volatile primary memory 142.Memory controller 141A comprises host interface 111 (in the accompanying drawing interface being recorded and narrated is I/F), CPU 112, RAM 113, ROM 114, control part 115 and register 143.Host interface 111 be and access device 150A between send to receive the interface of various command, logical address and data.Store the program that is used for control store controller 141A integral body among the ROM 114.Program is used RAM 113 as the temporary storage area, and operation on CPU 112.Control part 115 is that the data storage areas in the control Nonvolatile memory devices 140A is the circuit of non-volatile main memory 142.Primary memory 142 is non-volatile mass storages of for example being made up of flash memory.The structure of its physical blocks is identical with the existing structure shown in Fig. 8 B, and the physical blocks size respectively is made as 128kB.The various information of the relevant Nonvolatile memory devices 140A of register 143 storage, it comprises the information of the memory capacity of the allocation units size (AU size) of primary memory 142 and primary memory 142.

On the other hand, in Figure 15, access device 150A carries out access to Nonvolatile memory devices 140A, and it comprises CPU 121, RAM 122, ROM 151 and slot 124.Store the program that is used to control access device 150A among the ROM 151, it uses RAM122 as temporary storage area and operation on CPU 121.Slot 124 is connecting portions of Nonvolatile memory devices 140A and access device 150A, sends reception various command, logical address and data by slot 124 between access device 150A and the Nonvolatile memory devices 140A.And then, in ROM 151, comprise application program 125, file system control unit 155A, access control portion 127, storage device information acquisition unit 152, AU size storage list 153 and AU size determination section 154.File system control unit 155A controls when writing file data file data and directory entry are write different allocation units at every turn.And, storage device information acquisition unit 152 obtain the allocation units size that kept in the register 143 of Nonvolatile memory devices 140A, with the storage device capacity of primary memory 142.

Figure 16 is illustrated in the logical address of the data area in the file system management zone have been carried out writing fashionable, and file data and directory entry are the key diagrams in the physical blocks that how to be written in the primary memory 142.

Operation according to the Nonvolatile memory system of this embodiment one is described.At first, use Figure 15 that the operation of total system is described.At first, access device 150A with Nonvolatile memory devices 140A format, thus, similarly constitutes the logical address configuration shown in Figure 12 (a) with existing Nonvolatile memory system according to the FAT file system.In embodiments of the present invention, the size of the management information areas 601 till also adjusting from MBRPT603 to RDE607, and set the multiple that makes the size that its length becomes bunch.The configuration of the physical blocks of Figure 12 (c) expression Nonvolatile memory devices 140A.No matter under which kind of situation, data area 602 shown in Figure 1, promptly all consistent with the border of physical blocks PB from the zone that bunch #2 of Figure 12 (a) begins.On the other hand, by the initialization process of CPU 112, the address administration information 144 of primary memory 142 is read in address translation table 132 and the physical region admin table 133 in the address administration portion 116.

With mode so format and initialization after, access device 150A begins Nonvolatile memory devices 140A is carried out access.At first, obtain storage device information the register 143 of storage device information acquisition unit 152 in Nonvolatile memory devices 140A.In addition, these information are in initialization process, are read in the register 143 from primary memory 142.Storage device capacity must be present in the register 143, but allocation units size (AU size) exists situation that is stored in the register 143 and the situation that is not stored in the register 143 according to the situation of Nonvolatile memory devices.When storing the AU size in register 143, storage device information acquisition unit 152 is obtained this AU size.AU size determination section 154 is defined as the AU size with storage device information acquisition unit 152 from the AU size that register 143 is obtained.On the other hand, when not storing the AU size in the register 143, storage device information acquisition unit 152 is obtained storage device capacity.The storage device capacity that AU size determination section 154 is obtained from register 143 according to storage device information acquisition unit 152, and obtain maximum AU size (Max_AU_Size) with reference to AU size storage list 153, and this AU size is defined as the AU size.At this, in the AU size storage list 153, store corresponding relation as shown in table 1.

[table 1]

Storage device capacity	512MB-1GB	2GB	4GB-32GB
Storage device capacity	512MB-1GB	2GB	4GB-32GB	Max_AU_Size	1MB	2MB	4MB

In the following description, be located at and store the allocation units size in the register 143, and the allocation units size is made as 128kB.In addition, the allocation units size is the value that is not less than the physical blocks size, and this is a necessary condition.According to by the determined allocation units size of above-mentioned processing, access device 150A carries out access to Nonvolatile memory devices 140A.In addition, when in register 143, not storing the allocation units size, if there is not AU size storage list 153, storage device information acquisition unit 152 also can be obtained the physical blocks size from register 143, and the integral multiple that it is big or small is defined as the allocation units size.

Below, be treated to example its operation is described to write.At first, the access control portion 127 in the access device 150A will write indication and be sent to file system control unit 155A.File system control unit 155A retrieves white space on FAT605 shown in Figure 1,606, when having white space, write data in the white space that is obtained.This moment, access device 150A was sent to Nonvolatile memory devices 140A with write command WCMD, specific logical address and data.In Nonvolatile memory devices 140A, CPU 112 discerns write command WCMD, and control is transferred to control part 115.In control part 115, according to the logical address that access device 150A is transmitted, 116 decisions of address administration portion write the physical address of destination.In address administration portion 116, the physical blocks of having wiped is retrieved according to physical region admin table 133 by table access portion 131 shown in Figure 7, and this block is appointed as writes the object block.And then table access portion 131 will write the specific logic address position that the target area block address is written to address translation table 132.In addition, in the retrieval of the physical blocks of having wiped of table access portion 131, generally possess the function that wearing and tearing are adjusted, concentrate on the particular physical block to make as far as possible to write or do not wipe.

Secondly, illustrate, file data is write in the different allocation units with directory entry corresponding to this document data, thereby compare and can further improve write performance with the processing that writes in the existing Nonvolatile memory system shown in Figure 14 with Figure 16.

At first, file system control unit 155A retrieval is blank bunch.File system control unit 155A is disposed at file data and directory entry in the different allocation units.,

file

1,2 is disposed among the allocation units AU0 herein, directory entry is disposed among the allocation units AU2.For the performance that writes processing with existing Nonvolatile memory system shown in Figure 14 compares, be necessary to meet precondition.In Figure 14, be illustrated in the renewal of directory entry, promptly in WCMD3, WCMD5, in the renewal of WCMD3 is handled,

duplicate bunches

2,4,7 and amount to 3 bunches, and in the renewal of WCMD5 is handled,

duplicate bunches

2,4,5,6,7 and amount to 5 bunches example.Therefore, writing in the processing of the Nonvolatile memory system of present embodiment shown in Figure 16, also be in the renewal of directory entry, if be made as 5 bunches the state that duplicates, then be enough to as the precondition that compares.Therefore, establish bunches 18～22 in using bunch.

Then, in blank that file system control unit 155A is retrieved bunches 2～5, the inscape that writes file 1 is that the inscape of F11, F12 and file 2 is F21, F22.Different with the situation of Figure 14, directory entry is not present in bunches 3, promptly be easy to guarantee blank continuum, so

file

1,2 all can write continuously.At first if with in bunches 7 be written among the physical blocks PBA5.According to the processing that writes of F11 and F12, F11 and F12 are stored among the physical blocks PBA1 that has wiped that address administration portion 116 retrieved, and the data of being stored among the PBA5 are copied among the PBA1.On the other hand, establishing the directory entry that is present among the allocation units AU2 is written among the PBA4.Corresponding to writing of the file 1 that utilizes WCMD1, directory entry is written among the PBA33 with WCMD2.Also duplicate the data that are present in bunches 18～22 this moment.Below, similarly, physical blocks is write and duplicates according to writing of each file.

Secondly, the write performance of expression prior art and embodiment one in the table 2.

[table 2]

Write performance relatively	Write indegree	Number of copy times
Write performance relatively	Write indegree	Number of copy times	Existing Nonvolatile memory system	4 times	19 times
The Nonvolatile memory system of embodiment one	4 times	16 times	Existing Nonvolatile memory system	4 times	19 times

Under existing Nonvolatile memory system situation, writing indegree is 4 times, and number of copy times is 19 times.On the other hand, under the Nonvolatile memory system situation of embodiment one, writing indegree is 4 times, and number of copy times is 16 times.That is, we can say that the Nonvolatile memory system of embodiment one will duplicate and reduce 3 times, improve write performance with this.The main cause that this performance improves is: because file data is write in the mutual different allocation units, so file 1 can be write continuously with directory entry corresponding to this document data.Subsidiary mentioning, reproduction process is formed by reading and write these two processing, so its processing time is longer than ablation process.In addition, though in Figure 16 bunches 7 in using bunch, in this bunch, the directory entry corresponding to the file beyond file 1 or the file 2 can be arranged also.That is, file data, also can be stored in the same allocation units with directory entry corresponding to the file data different with this document data.Thus, even if when writing down a plurality of file data at the same time, also can improve write performance.Moreover file system control unit 155A only optionally uses the allocation units that have certain white space in allocation units, thereby is easy to write continuously file data, therefore can improve write performance.

(embodiment two)

Secondly, use Figure 17 that embodiments of the present invention two are described.In this embodiment, in memory controller 141B, increased data identification portion 161, non-volatile ram 162, and access device 150B has file system control unit 155B.File system control unit 155B is different with the file system control unit 155A of embodiment one, and it is that directory entry writes specific allocation units all the time with file system management information, herein for writing among the AU2.Other structures are identical with embodiment one.

Data identification portion 161 is whether whether the data that identification access device 150B is transmitted in writing processing are file datas or are that file system management information is the module of directory entry.

Non-volatile ram 162 is that memory capacity can be less than non-volatile supplementary storage of the directory entry of file data.Preferably, the writing speed of supplementary storage is faster than primary memory 142.And non-volatile ram is to rewrite to guarantee that number of times is more than primary memory and erasable nonvolatile RAM.And preferably, disclosed ferroelectric RAM (FeRAM) or magnetic recording formula random access memory (MRAM), phase transition storage (OUM), impedance RAM (RRAM) etc. in the non-volatile ram 162 use Japanese patent laid-open 7-281842 communiques etc.In addition, as non-volatile ram, the practicability at present of hundreds of kB for example, future is more jumbo with continuous practicability.

Figure 18 is illustrated in the logical address of the data area in the file system management zone have been carried out writing fashionable, and file data is that directory entry is again the key diagram that how to be written in the non-volatile ram 162 in the physical blocks that how to be written in the primary memory 142.

Figure 19 represents the memory mapped (memory map) of non-volatile ram 162.The entire capacity of non-volatile ram 162 is 128kB, and has the storage area of the directory entry of 256 512 bytes.

Secondly, the operation of embodiment two is described,, can improves write performance more and compare with embodiment one especially by on non-volatile ram 162, only directory entry being read and write control.The key point that can further improve performance is to adopt following method, promptly as shown in figure 16, is not all to duplicate when upgrading directory entry at every turn at every turn.So, nonvolatile memory that can be erasable when taking place to rewrite on a part of sector of physical blocks, does not need other sectors are copied on other physical blocks as shown in figure 16.That is, same with random access memory ram, can rewrite and need not to carry out special address function.Describe according to Figure 18, allocation units AU2 is for only being assigned the address of directory entry, is written into corresponding to the directory entry that writes of

file

1 and 2 to have the asterisk marked address, i.e. 512 bytes.Corresponding therewith, the rewriting of 512 bytes takes place on non-volatile ram 162, but as mentioned above, because non-volatile ram 162 is erasable storer, therefore, when producing write command WCMD2 and WCMD4 at every turn, only rewriting has the asterisk marked address, and promptly 512 bytes get final product.

Secondly, in table 3 the expression non-volatile main memory be flash memory, with supplementary storage be the comparison of non-volatile ram.As shown in table 3, the rewriting of flash memory guarantees that number of times is 100,000 times, and with respect to this, the rewriting of non-volatile ram guarantees that number of times is very big, reaches 10,000,000,000 times, does not therefore have specific question on the life-span.Below, describe its reason in detail.

[table 3]

The flash memory that 1GB is installed is as primary memory 142, when pressing each bunch unit with 1 write command, when promptly in FAT16, file data being rewritten one by one,, will issue about 64K write command in order to rewrite all told of a whole 1GB by 16kB unit.

1GB ÷ 16kB=64K time ... (1)

On the other hand, corresponding to the rewriting of this document data, 1 directory entry is rewritten 64K time.That is, all physical blocks of flash memory are rewritten 1 time, just be equivalent to the zone of the specific 512B of non-volatile ram 162 is rewritten 64K time.This also is the poorest condition in non-volatile ram 162.According to table 3, the rewriting of flash memory guarantees that number of times is 100,000 times.Therefore according to following mathematical expression (2), when flash memory was rewritten 100,000 times, non-volatile ram 162 just was rewritten 6,400,000,000 times.

64K time * 100,000 times=6,400,000,000 times＜10,000,000,000 times ... (2)

According to table 3, this value guarantees number of times 10,000,000,000 times less than rewriting of non-volatile ram, thus the life-span of the life-span of flash memory and non-volatile ram 162 there is no than big difference, the number of rewrites of non-volatile ram 162 is not the grade that specific question was arranged on the life-span.

And according to table 3, be about 100ns the write cycle of per 1 byte of non-volatile ram, just is about about 50 μ s when therefore directory entry 512 bytes being write 1 time.That is the write cycle that, can not surpass flash memory.Therefore, might as well think that rewriting time of 1 time of directory entry is roughly the same.

The comparison of the write performance of expression conventional example and embodiment two in the table 4.The number of copy times of embodiment two is obviously less, and therefore write performance is higher as can be known.

[table 4]

As the recognition methods of the data identification portion 161 in the present embodiment two, describe with regard to following two kinds of methods.First method is, when access device 150B writes file data to Nonvolatile memory devices 140B, with the parameter named list registration of the write command information according to type.That is, write command take Write (size, addr, form data_kind), size represents to write size, addr represents to write the address, these parameters are parameters as in the past.Have following feature in the present embodiment two, that is, in parameter, be provided with data_kind.Pass to the type of the data of write command with any conduct of data_kind specified file data or directory entry.For example, with the sign (flag) of data_kind as 1, data identification portion 161 is to be judged as file data at 0 o'clock in the data_kind value, is then to be judged as directory entry at 1 o'clock in the data_kind value, and control signal is sent to control part 115.

Second method is following method, that is, as write command, be provided with Write (size, addr) with Write_DE (size, addr) these two kinds, the former is as the write command that is used for file data, the latter is as the write command that is used for directory entry.In addition, FAT605,606 etc., (size addr) gets final product all to use Write except that directory entry.In the method, the order that CPU162 identification access device 150B is transmitted is Write (size in this order, addr) or Write_DE (size, addr) time, wherein which 161 judgements of data identification portion are, and control signal is sent to control part 115.

Then, 161 identifications of data identification portion are file data or directory entry by the data of access device institute access.Control part 115 carries out access to primary memory 142, and when being identified as directory entry, then non-volatile ram 162 is carried out access when being identified as data.

In present embodiment two, the capacity of non-volatile ram 162 is made as 128kB, but also may has the situation of the size of allocation units, therefore the comparatively ideal non-volatile ram that is installed capacity greater than 128kB greater than 128kB.And non-volatile ram 162 also can not be built among the memory controller 141B, and is arranged at the outside of memory controller 141B.

As mentioned above, in embodiment two, when access device 150B write Nonvolatile memory devices 140B with file data, file system control unit 155B write different allocation units with file data and directory entry, in the promptly different physical blocks.Therefore just become and be easy to write continuously file data, and can when directory entry upgrades, reduce the number of copy times of file.And then, file system control unit 155B controls, so that all directory entry is stored in the specific allocation units, the data that write object according to conduct are that file data or directory entry are discerned, and write in primary memory and the supplementary storage, therefore can significantly improve the speed that writes.

In addition, be made as in this embodiment two allocation units are write supplementary storage, but also directory entry can be write in the physical blocks of primary memory.

(embodiment three)

Secondly, use Figure 20, Figure 21 that embodiments of the present invention three are described.Among the Nonvolatile memory devices 140C of this embodiment, non-volatile primary memory is made as the nonvolatile memory 171 that to write afterwards.And, in memory controller 141C, except that first control part 115, also be provided with second control part 172.Second control part 172 is in order to write the control part of directory entry in the regulation allocation units of nonvolatile memory 171.First control part 115 and second control part 172 are that the data storage areas in the control Nonvolatile memory devices 140C is the control part of nonvolatile memory 171.Bus switching part 173 is switch data or address administration information between first control part 115 and second control part 172.And selector switch 174 is to switching from the data that write of first control part, second control part, the selector switch that writes to primary memory 171.The structure of the physical blocks of nonvolatile memory 171 is identical with the existing structure shown in Fig. 8 B.

On the other hand, in Figure 20,, except that the operation of file system control unit 155C, identical with the Nonvolatile memory system of foregoing embodiment one to the access device 150C that Nonvolatile memory devices 140C carries out access.For with the existing or same inscape of foregoing Nonvolatile memory system, additional phase with Reference numeral also omit detailed explanation.

Figure 21 is the figure of the detailed structure of expression first control part 115, second control part, 172 peripheries.First control part 115 is identical with the control part 115 of foregoing embodiment one.Roughly the same therewith, second control part 172 has the second address administration portion 175 and the second main memory access portion 176.175 pairs of table access portions 177 of the second address administration portion and connected address translation table 178 and physical region admin table 179 carry out access.And the second main memory access portion 176 carries out access through 174 pairs of primary memorys of selector switch 171, and writes directory entry.Second control part 172 is in order to carry out the module that writes control of directory entry by Worm type.

Figure 22 is the figure of this address translation table 178 of expression.This address translation table is to have write the logical sector address in the logical blocks that directory entry write and the logical physical address translation table of physical sector address corresponding with it.

Figure 23 is the figure of expression physical region admin table 179.Physical region admin table 179 is tables of the expression sector state relative with the sevtor address PSA of the physical blocks that writes this directory entry.The effective sector of the value of being made as 00 expression herein, the invalid sector of value 01 expression, the blank sector of value 10 expressions.

With regard to the operation of the Nonvolatile memory system of this embodiment three, especially seek the raising of performance and describe by importing the Worm type wiring method.The key point that can further improve performance is to adopt following method, that is, whenever the renewal that directory entry is arranged, be not all to duplicate at every turn.Use disclosed Worm type wiring method in Japanese patent laid-open 5-27924 number, be following method: the order that each physical sector that constitutes physical blocks is write directory entry is not the logic sector order, and one by one writes afterwards according to sending the order that writes indication.

It is not have blank sector or blank sector not to write afterwards smaller or equal to not carrying out replication processes before the given number in physical blocks that this Worm type writes.No blank sector in physical blocks, the physical blocks that other have been wiped is retrieved smaller or equal to the moment of certain number in perhaps blank sector.Then, in this physical blocks, carry out record, the method for promptly duplicating again according to the logic sector order.The catalogue item size is the smaller like this sizes of 512 bytes, and the physical blocks size is the 128k byte, therefore can 1 physical blocks be write afterwards at most 512 times, and the less likely of replication processes promptly takes place, and can carry out writing at a high speed.

Therefore, write or rewrite maximum 512 file datas during, can upgrade directory entry at high speed.Here it is uses the reason of Worm type wiring method at writing of directory entry.Figure 24 specifies this, promptly is to be illustrated in to have carried out writing fashionable, and file data and directory entry are the key diagrams in the physical blocks that how to be written in the nonvolatile memory 171.Figure 24 represents that directory entry has write among the physical blocks PBA4, and has write afterwards the state of directory entry with write command WCMD2,4.Herein, the catalogue item size is less to be 512B, is therefore write afterwards in cluster 23.Compare as can be known with Figure 14, when upgrading directory entry, replication processes does not take place.Writing indegree among Figure 14 is 4 times, and number of copy times is 19 times, and with respect to this, writing indegree among Figure 24 is 6 times, and number of copy times is 4 times, and number of copy times is obviously less, and therefore write performance is higher as can be known.

Bulk treatment when at first, using Figure 20 explanation only directory entry to be used the Worm type wiring method.In Figure 20, file data and directory entry that the 161 identification access device 150C of data identification portion are transmitted in writing processing.As the recognition methods in the present embodiment, under the prerequisite of " file data is written into bunch unit " and so on, just can discern with the difference of data capacity.Particularly, transmit after the data of 512 bytes transmit and transmit when finishing order, these data are directory entry, and situation is in addition handled as file data and got final product.

As other recognition methodss, consider and the embodiment two same methods that change write command type and so on.Particularly, file data uses multiple write command, and directory entry uses single write command.And then, as other recognition methodss, also can in write command, attach sign, and discern according to sign.In arbitrary method, all give certain restriction to access device 150C or Nonvolatile memory devices 140C.

Then, when the data that transmitted are identified as file data by data identification portion 161, switch bus switching part 173 and selector switch 174 by control signal, and first control part 115 is connected to the input bus side, so that its output becomes the input of primary memory 171.At this moment, by first control part 115, carry out with existing Nonvolatile memory system same write processing.On the other hand, when data identification portion 161 identifies the data that transmitted and is directory entry,, will switch to second control part, 172 sides to the input bus of bus switching part 173 by control signal, and in selector switch 174, the output of second control part 172 is made as primary memory 171.At this moment, carry out Worm type by second control part 172 and write processing.

Use Figure 25～33 explanation Worm types to write the structure of processing.Figure 25 is the key diagram of the configuration of the physical blocks size of the expression primary memory 171 physical sector address PSA during for 128kB.In Figure 25, PSA is the abbreviation of physical sector address, and the numbering that is marked with PSA is represented address value.Descending sort by page address is PSA0, PSA1...PSA511.Put in order by this and to write directory entry.

Figure 26 is illustrated in the key diagram that writes the sequence of directory entry DE1～DE4 on the physical blocks shown in Figure 25.In Figure 26, apply the sector of hypographous sector in representing to use, blank sector is represented in the sector that does not apply shade, the sector of promptly having wiped.Applying within the hypographous sector, is the sector of having write down the latest list item with the sector that dual frame was surrounded, promptly effective sector.On the other hand, applying within the hypographous sector, is the sector of having write down old directory entry with the sector that single frame was surrounded, promptly invalid sector.At first, the directory entry DE1 corresponding to file 1 is written to PSA0.In addition, the subscript of directory entry DE1 is numbered corresponding to reference number of a document, and will by this document numbering subtract 1 and numbering as the subscript numbering of logical sector address LSA0.The write sequence of file data is made as file 1 → file 2 → file 1 → file 3 → file 2 → file 4.Directory entry corresponding to this is write afterwards as shown in figure 26.In Figure 26, apply the sector of hypographous sector in representing to use, blank sector is represented in the sector that does not apply shade, the sector of promptly having wiped.Applying within the hypographous sector, is the sector of having write down the latest list item with the sector that dual frame was surrounded, and handles as effective sector.On the other hand, applying within the hypographous sector, is the sector of having write down old directory entry with the sector that single frame was surrounded, and handles as invalid sector.

Figure 27～Figure 33 represents according to this write sequence, whether convert logical sector address LSA and physical sector address PSA corresponding with it to, and how the Status Flag of each physical sector address PSA changes.The block in the left side of described each figure is the logical blocks of being distributed the directory entry of expression from the viewed logical address space of access device 150C.Has LSA0～LSA511 as relative logical sector address herein.The physical blocks corresponding to the block on this logical address space is represented on the right side of Figure 27～Figure 33.This physical blocks is in order to write the physical blocks of directory entry DE, is the physical blocks that the address translation table 132 by address administration portion 116 is mapped.And, by the address translation table 178 in the second address administration portion 175 of second control part 172 the concrete sector in the physical blocks is mapped.Relative sevtor address PSA0～511 of expression physical blocks in Figure 27～33.

Figure 27 represents not write as yet the original state of directory entry.Then, as shown in figure 28, the logical sector address LSA0 of the block that is used for data item on logical address writes directory entry DE1.Owing to be initial writing on the primary memory 171, therefore be written among the physical sector address PSA0.At this moment, with the conversion after corresponding sector, PSA0 position the state value of changing to 00, i.e. effective status on physical region admin table 179.

Equally, Figure 29 is illustrated in when having write directory entry DE2 among the logical sector address LSA1, the update mode of logical blocks and physical blocks corresponding with it.

The processing that Figure 30 explanation rewrites the directory entry DE1 of logical sector address LSA0.Owing to be writing for the third time, therefore in physical sector address PSA2, write new directory entry DE1 (N).That is, become PSA2 with the corresponding physical sector of logical sector address LSA0 in the address translation table 178, and on physical region admin table 179, change to effective status with corresponding sector, the position of PSA2 state.And then it is unnecessary that the original directory entry DE1 (O) that has been recorded in the PSA0 position becomes, therefore, and with corresponding sector, the position of PSA0 the state value of changing to 01, i.e. disarmed state on physical region admin table 179.

Equally, in Figure 31～33, also rewrite in the logical sector address, also carry out the renewal of directory entry corresponding to this block that is used for directory entry of logical address space.Corresponding to this, the physical blocks that is used for directory entry is write afterwards.And according to this, the state of address translation table or sector changes.

As mentioned above, write and rewrite processing according to a series of, the directory entry of the physical sector relative with logical sector address obtains upgrading.Finally, shown in the left side of Figure 34, all physical sector address that write the physical blocks of directory entry are filled.At this moment, the physical blocks of having wiped of second control part, 172 retrieving novels.Then, shown in the right side of Figure 34, each directory entry is reconfigured in new physical blocks and becomes the order of logical sector address LSA.That is, only duplicate effective directory entry, and wipe and become unnecessary old physical block.In addition, also can in the old physical block, write the moment of the directory entry of particular sector number, reconfigure and wiped processing.In above Worm type wiring method, second control part, 172 management address, and primary memory 171 write.In addition, include following information in the physical region admin table 133, that is, which physical blocks is in the use or is wiped, and this information must be shared between first control part 115 and second control part 172.Therefore, carry out the exchange of information mutually through bus.

By directory entry is used the Worm type wiring method, the update time of directory entry is just such as shown in figure 35.In addition, if the data transfer rate to primary memory 171 is per 1 byte 50ns, the program holding time of primary memory 171 (busy time) is 300 μ s, and the holding time that reads of primary memory 171 is 25 μ s, and the program of primary memory 171 and the access unit that reads are 1 page (2k byte).

In recording the physical blocks of directory entry, exist blank sector during, according to

(50ns * 512 bytes)+(300 μ s * 1 page)=about 0.33ms, be about 0.33ms update time.

On the other hand, during reconfiguring and wiping, according to

(50ns * 128k byte)+(300 μ s * 64 page)+(50ns * 128k byte)+(25 μ s * 64 page)+about 33.6ms of 2ms=, be about 33.6ms update time.

Herein as mentioned above, the catalogue item size is that promptly, the frequency that reconfigures and wipe is lower with respect to the abundant little size of physical blocks size, therefore, also can consider average to carry out the renewal of directory entry about 0.33ms.Therefore, by the impact damper in the processing time that can absorb the 33.6ms that produces with low frequency is set, it is no problem on the transfer rate of system just can to think.According to the about 70kB of 2MBps * 33.6ms=, the size of this impact damper is that the zone of 70kB gets final product, and for example guarantees in RAM113 that this zone gets final product.

As mentioned above, when access device 150C writes file data among the Nonvolatile memory devices 140C, file system control unit 155C with file data be written to different allocation units with its corresponding directory entry, be in the different physical blocks, therefore just become and be easy to write continuously file data, and can when the renewal of directory entry, reduce the number of copy times of file.And then, 161 identifications of data identification portion are file data or directory entry as the data that write object, and when writing directory entry, the physical blocks of 172 pairs of primary memorys 171 of second control part is carried out Worm type and is write, and the renewal speed of directory entry is improved.

Also can make and write high speed this moment, and can improve the renewal speed of directory entry.

Utilizability on the industry

Relate to Nonvolatile memory system of the present invention, even if in having used the Nonvolatile memory devices of physical blocks size greater than the nonvolatile memory of bunch size, also can carry out high speed writes, and be of value to the various electronic equipments that used the Nonvolatile memory devices such as semiconductor memory card, for example rest image record regenerator or dynamic image record regenerator, perhaps portable phone etc.

Claims

1. a Nonvolatile memory system comprises access device and Nonvolatile memory devices, and according to from the given order of described access device and logical address and described Nonvolatile memory devices is write and read file data,

Described Nonvolatile memory devices has non-volatile primary memory and memory controller,

Non-volatile storer that described primary memory is made up of a plurality of physical blocks, the size of described physical blocks greater than as described access device region allocation unit bunch,

Described memory controller has:

Address administration portion is according to the physical address that determines described primary memory from the given logical address of described access device; And

Main memory access portion, according to the address shown in the described address administration portion and described primary memory is carried out access,

Described access device, by a plurality of bunches and logical address and file control data, and with a plurality of continuous bunch as allocation units, and the amount of capacity of described allocation units is the physical blocks size more than or equal to described primary memory, file data management information and described file data is write different allocation units mutually when writing file data.

2. Nonvolatile memory system according to claim 1 is characterized in that, described access device gets up to write in the specific allocation units with described file data management information aggregating.

3. Nonvolatile memory system according to claim 1 is characterized in that, described primary memory is to write afterwards the non-volatile storer that writes to the zone of each physical blocks, and

Described memory controller has:

The 2nd address administration portion is converted to physical sector address with the logical sector address in the described allocation units; And

The 2nd main memory access portion when the described file control information of record, carries out access according to the sevtor address shown in described the 2nd address administration portion to the physical blocks that constitutes allocation units.

4. Nonvolatile memory system according to claim 1 is characterized in that, described access device is in order to discern described file data and described file data management information, and has at least two kinds of write commands.

5. Nonvolatile memory system according to claim 4 is characterized in that the said write order has parameter, and in order to discern described file data and described file data management information, and the parameter of change said write order.

6. Nonvolatile memory system according to claim 1 is characterized in that, described memory controller is notified to described access device with the memory span of described primary memory, and

Described access device determines the size of described allocation units according to the memory span of being notified by described memory controller.

7. Nonvolatile memory system according to claim 1 is characterized in that, described memory controller is notified to described access device with the physical blocks size of described primary memory, and

Described access device determines the size of described allocation units according to the physical blocks size of being notified by described memory controller.

8. Nonvolatile memory system according to claim 1 is characterized in that, described access device only selectivity uses the described allocation units that have certain white space in described allocation units.

9. Nonvolatile memory system according to claim 1 is characterized in that, described Nonvolatile memory devices also comprises and rewrite to guarantee number of times more than described primary memory and can carry out erasable non-volatile supplementary storage, and

Described memory controller writes described supplementary storage with described file data management information.

10. Nonvolatile memory system according to claim 9 is characterized in that, described supplementary storage is the nonvolatile memory of writing speed faster than described primary memory.

11. Nonvolatile memory system according to claim 9 is characterized in that, described supplementary storage is a non-volatile ram.

12. Nonvolatile memory system according to claim 11, it is characterized in that described supplementary storage is a certain among ferroelectric RAM (FeRAM), magnetic recording formula random access memory (MRAM), phase transition storage (OUM), the impedance RAM (RRAM).

13. Nonvolatile memory devices, by a plurality of bunches and logical address and file control data, and with a plurality of continuous bunch as allocation units, when the log file data, file data management information is write different allocation units with described file data, and the amount of capacity of described allocation units is more than or equal to the physical blocks size, when described file data and described file data management information are write Nonvolatile memory devices, be connected with access device and use, this access device issue can be discerned the write command of described file data and described file control information each other, and according to from the given order of described access device and logical address and write and read file data, described Nonvolatile memory devices has:

Non-volatile primary memory and memory controller,

Non-volatile storer that described primary memory is made up of a plurality of physical blocks, the size of described physical blocks greater than as described access device region allocation unit bunch, and

Described memory controller has:

Address administration portion is according to the physical address that determines described primary memory from the given logical address of described access device;

Main memory access portion is according to the address shown in the described address administration portion and described primary memory is carried out access; And

Register keeps the data relevant with the capacity of described primary memory.

14. Nonvolatile memory devices according to claim 13 is characterized in that, described primary memory is to write afterwards the non-volatile storer that writes to the zone of each physical blocks, and

Described memory controller has:

The 2nd main memory access portion, at record during described file control information, the physical blocks according to the sevtor address shown in described the 2nd address administration portion to the allocation units that constitute described primary memory is carried out access.

15. Nonvolatile memory devices according to claim 13 is characterized in that, described memory controller is notified to described access device with the memory span of described primary memory.

16. Nonvolatile memory devices according to claim 13 is characterized in that, described memory controller is notified to described access device with the physical blocks size of described primary memory.

17. Nonvolatile memory devices according to claim 13 is characterized in that, described Nonvolatile memory devices further comprises and rewrite to guarantee number of times more than described primary memory and non-volatile supplementary storage that can be erasable, and

18. Nonvolatile memory devices according to claim 17 is characterized in that, described supplementary storage is the nonvolatile memory of writing speed faster than described primary memory.

19. Nonvolatile memory devices according to claim 17 is characterized in that, described supplementary storage is a non-volatile ram.

20. Nonvolatile memory devices according to claim 19, it is characterized in that described supplementary storage is a certain among ferroelectric RAM (FeRAM), magnetic recording formula random access memory (MRAM), phase transition storage (OUM), the impedance RAM (RRAM).

21. Nonvolatile memory devices according to claim 13 wherein, when writing file data, writes identical allocation units with described file data, the pairing second file data management information of second file data different with described file data.

22. memory controller, by a plurality of bunches and logical address and file control data, and with a plurality of continuous bunch as allocation units, when the log file data, file data management information is write different allocation units with described file data, and the amount of capacity of described allocation units is more than or equal to the physical blocks size, when described file data and described file data management information are write non-volatile primary memory, be connected with access device and use, this access device issue can be discerned the write command of described file data and described file control information each other, and according to from the given order of described access device and logical address and described primary memory is write and read file data

Described primary memory is the non-volatile storer that comprises a plurality of physical blocks, the size of described physical blocks greater than as described access device region allocation unit bunch, and

Described memory controller has:

Register keeps the data relevant with the capacity of described primary memory.

23. memory controller according to claim 22 is characterized in that, described primary memory is to write afterwards the non-volatile storer that writes to the zone of each physical blocks, and,

Described memory controller has:

The 2nd main memory access portion at record during described file control information, carries out access according to the sevtor address shown in described the 2nd address administration portion to the physical blocks of the allocation units that constitute described primary memory.

24. memory controller according to claim 22 is characterized in that, described memory controller is notified to described access device with the memory span of described primary memory.

25. memory controller according to claim 22 is characterized in that, described memory controller is notified to described access device with the physical blocks size of described primary memory.

26. memory controller according to claim 22, it is characterized in that, described memory controller further comprises and rewrite to guarantee number of times more than described primary memory and non-volatile supplementary storage that can be erasable, and described file data management information is write described supplementary storage.

27. memory controller according to claim 26 is characterized in that, described supplementary storage is the nonvolatile memory of writing speed faster than described primary memory.

28. memory controller according to claim 26 is characterized in that, described supplementary storage is a non-volatile ram.

29. memory controller according to claim 28, it is characterized in that described supplementary storage is a certain among ferroelectric RAM (FeRAM), magnetic recording formula random access memory (MRAM), phase transition storage (OUM), the impedance RAM (RRAM).

30. memory controller according to claim 22 wherein, when writing file data, writes identical allocation units with described file data, the pairing second file data management information of second file data different with described file data.

31. the control method of the Nonvolatile memory devices in the Nonvolatile memory system, this Nonvolatile memory system comprises access device and Nonvolatile memory devices, and described Nonvolatile memory devices has non-volatile main memory and memory controller, comprise a plurality of physical blocks in the described non-volatile main memory, the size of described physical blocks greater than as described access device region allocation unit bunch, and, described Nonvolatile memory system is according to from the given order of described access device and logical address described Nonvolatile memory devices being write and read file data

By a plurality of bunches and logical address and file control data, and with a plurality of continuous bunch, as the allocation units of capacity more than or equal to the physical blocks size of described primary memory, and

When the log file data, file data management information is write different allocation units with described file data; And

Described memory controller is according to the physical address that determines described primary memory from the given logical address of described access device,

When described file data and described file data management information are write described Nonvolatile memory devices, mutually described file data of identification and described file data management information, and according to described primary memory is carried out access and writing in the address shown in the described address administration portion.

32. the control method of Nonvolatile memory devices according to claim 31 is characterized in that, described primary memory is to write afterwards the non-volatile storer that writes to the zone of each physical blocks,

By described memory controller, and the logical sector address in the described allocation units is converted to physical sector address, and

At record during described file control information,, and the physical blocks of the allocation units that constitute described primary memory is carried out access according to the sevtor address shown in described the 2nd address administration portion.

33. the control method of Nonvolatile memory devices according to claim 31 is characterized in that, described access device is in order to discern described file data and described file data management information, and at least two kinds of write commands of change.

34. the control method of Nonvolatile memory devices according to claim 31, it is characterized in that, when described access device writes described Nonvolatile memory devices in identification described file data and described file data management information and with it, change the parameter of write command.

35. the control method of Nonvolatile memory devices according to claim 31 is characterized in that, the memory span of the described primary memory that described access device is notified according to described memory controller, and determine the size of described allocation units.

36. the control method of Nonvolatile memory devices according to claim 31 is characterized in that, the physical blocks size of the described primary memory that described access device is notified according to described memory controller, and determine the size of described allocation units.

37. the control method of Nonvolatile memory devices according to claim 31 is characterized in that, described access device only optionally uses the described allocation units that have certain white space.

38. the control method of Nonvolatile memory devices according to claim 31 is characterized in that, described Nonvolatile memory devices comprises that further rewriting guarantees number of times more than described primary memory and erasable non-volatile supplementary storage, and

By described memory controller, and described file data management information is write described supplementary storage.

39. the control method of Nonvolatile memory devices according to claim 31, wherein, when writing file data, described file data, the second file data pairing second file data management information different with described file data are write identical allocation units.

40. an access device writes and read file data to the Nonvolatile memory devices with primary memory, described access device is characterised in that,

By a plurality of bunches and logical address and file control data, and with a plurality of continuous bunch as allocation units, and the capacity of described allocation units is the physical blocks size more than or equal to described primary memory, file data management information and described file data is write different allocation units mutually when writing file data.

41. according to the described access device of claim 40, it is characterized in that, described file control information is compiled write in the specific allocation units.

42., it is characterized in that in order to discern described file data and described file data management information, and having at least two kinds of write commands according to the described access device of claim 40.

43. according to the described access device of claim 42, it is characterized in that write command has parameter, and in order to discern described file data and described file data management information, and the parameter of change said write order.

44. according to the described access device of claim 40, it is characterized in that,, and determine the size of described allocation units according to the memory span of notifying from described Nonvolatile memory devices.

45. according to the described access device of claim 40, it is characterized in that, the physical blocks size of notifying according to described Nonvolatile memory devices, and determine the size of described allocation units.

46. according to the described access device of claim 40, it is characterized in that, only optionally use the described allocation units that in described allocation units, have certain white space.

47., wherein, when writing file data, described file data, the second file data pairing second file data management information different with described file data are write identical allocation units according to the described access device of claim 40.

48. Nonvolatile memory system, comprise access device as claimed in claim 40 and Nonvolatile memory devices, described Nonvolatile memory devices, it comprises described primary memory and memory controller, described memory controller has host interface, described Nonvolatile memory devices is connected with described memory storage via described host interface, and according to the given order of described access device and logical address and write and read file data.

49. according to claim 1 or 48 described Nonvolatile memory systems, wherein, when writing file data, described file data, the second file data pairing second file data management information different with described file data are write identical allocation units.