CN100508060C - Refurbishing method and device of random memorizer - Google Patents

Refurbishing method and device of random memorizer Download PDF

Info

Publication number
CN100508060C
CN100508060C CNB2006101621921A CN200610162192A CN100508060C CN 100508060 C CN100508060 C CN 100508060C CN B2006101621921 A CNB2006101621921 A CN B2006101621921A CN 200610162192 A CN200610162192 A CN 200610162192A CN 100508060 C CN100508060 C CN 100508060C
Authority
CN
China
Prior art keywords
refresh
time
refreshing
interval
random access
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CNB2006101621921A
Other languages
Chinese (zh)
Other versions
CN1971759A (en
Inventor
张怡浩
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Wuxi Vimicro Corp
Original Assignee
Vimicro Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Vimicro Corp filed Critical Vimicro Corp
Priority to CNB2006101621921A priority Critical patent/CN100508060C/en
Publication of CN1971759A publication Critical patent/CN1971759A/en
Application granted granted Critical
Publication of CN100508060C publication Critical patent/CN100508060C/en
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Landscapes

  • Dram (AREA)

Abstract

The invention discloses a refresh method for random memorizer that it previously sets the mapping relation of the access intensity, refresh interval and refresh times. It includes: A. calculating the access intensity, determining the refresh interval and refresh times according to the access intensity and said mapping relation, controlling the refresh of random memorizer according to the refresh interval and refresh times; B. executing the step A repeatedly until complete the defined refresh times in the defined time. Additionally, a refresh device for random memorizer is disclosed. The refresh method and device provided by the invention can and improve the access efficiency and reliability.

Description

A kind of method for refreshing of random access memory and device
Technical field
The present invention relates to random access memory, relate in particular to a kind of method for refreshing and device of random access memory.
Background technology
Random access memory is the important component part of capacity data treatment circuit, along with the development of data processing technique, has proposed more and more higher requirement for the capacity and the performance of random access memory.With synchronous DRAM (SDRAM) is example, and sdram size is big, read or write speed is fast, support burst type read-write and relative low price, thereby has obtained using widely.Especially present mobile hand-held device as mobile phone, MP4 etc., relies on SDRAM more.
Random access memory is the effumability storer, therefore must refresh each address in some cycles, otherwise the data that deposit these addresses just may be lost.When refreshing, send refresh command by the refreshing apparatus of SDRAM to SDRAM, SDRAM carries out refresh operation according to this refresh command.To require at T in the time, the SDRAM that refreshes N time is an example, has a kind of method to be in the prior art: at every section T certain fixed time in the time, such as the zero hour, send N refresh command to SDRAM continuously, SDRAM carries out N time according to refresh command and refreshes continuously.Owing to refresh and not to be to finish at once at every turn, and SDRAM can not be accessed when refreshing, need wait until that refresh process finishes, could visit, so in first method, having a very long time can not access sdram, for those equipment that access time is had relatively high expectations, can't meet the demands.
For this reason, the another kind of method of proposition is: at every section T/N certain fixed time in the time, such as the zero hour, send a refresh command to SDRAM, SDRAM once refreshes according to refresh command, soon refreshes for N time to be evenly distributed to T in the time.In the second method, though refresh time has been carried out mean allocation, but the visit to storer in the practical application is normally uneven, therefore second method does not fully take into account the situation of visit closeness, if in a period of time, the visit closeness is bigger, then this moment refresh the efficient that still can have influence on visit, the reliability of visit is reduced.
As seen, existing refresh technique all can have influence on access efficiency, and the reliability of visit is reduced.
Summary of the invention
In view of this, one aspect of the present invention provides a kind of method for refreshing of random access memory, and a kind of refreshing apparatus of random access memory is provided on the other hand.Can improve access efficiency and reliability.
The method for refreshing of random access memory provided by the present invention comprises: set in advance the mapping relations of visit closeness and refresh interval, refreshing frequency, this method comprises:
A, calculating visit closeness are determined refresh interval and refreshing frequency according to the mapping relations of visit closeness of being calculated and described setting, refresh according to determined refresh interval and refreshing frequency control random access memory;
B, repeated execution of steps A finish in the stipulated time of refreshing requirement and refresh refreshing of requirement stipulated number; If determine in the time critical values that is provided with, not finish refreshing of stipulated number, then control random access memory and finish refreshing of residue degree in excess time at the appointed time.
Wherein, described according to determined refresh interval and refreshing frequency control random access memory refresh for: send refresh command according to determined refresh interval and refreshing frequency to random access memory.
Wherein, the mapping relations of described visit closeness and refresh interval, refreshing frequency comprise: the scope interval of visit closeness and the mapping relations of refresh interval, refreshing frequency.
Wherein, described control random access memory finish in excess time at the appointed time residue degree refresh for: according to refresh needed minimum interval sends refresh command from residue degree to random access memory at every turn; Perhaps according to refresh average time interval in excess time sends refresh command from residue degree to random access memory at every turn.
Wherein, described time critical values is the quiet hour critical value that sets in advance.
Described quiet hour critical value is: be provided with according to the stipulated number that refreshes needed minimum interval and refresh in the requirement at every turn.
Wherein, described time critical values is the time critical values of dynamic calculation;
And the time critical values of described dynamic calculation is: according to the variation of refresh time and refreshing frequency, excess time and needed least residue time of residue degree in this stipulated time of dynamic calculation, if the excess time of dynamic calculation is greater than the needed least residue of the residue degree time, and when reaching default threshold value with the difference of least residue time, with this excess time temporarily as the time critical values that refreshes in this stipulated time.
Wherein, described calculating visit closeness specifically comprises:
The sampling clock periodicity is set; Be recorded in this sampling clock periodicity the clock periodicity that random access memory is accessed; Calculate the number percent that the accessed clock periodicity of random access memory takies the sampling clock periodicity, obtain visiting closeness;
Perhaps, described Time Calculation visit closeness according to the visit random access memory specifically comprises:
The sampling clock periodicity is set; Be recorded in this sampling clock periodicity the clock periodicity of random access memory free time; The clock periodicity that calculates the random access memory free time takies the number percent of sampling clock periodicity, obtains visiting closeness.
The refreshing apparatus of random access memory provided by the present invention comprises: refresh decision package and refresh control unit, wherein,
Refresh decision package, be used for the mapping relations of memory access closeness and refresh interval, refreshing frequency; Calculate the visit closeness, mapping relations according to visit closeness of being calculated and described storage are determined refresh interval and refreshing frequency, send the control command that refreshes according to refresh interval and refreshing frequency to the refresh control unit, in the stipulated time of refreshing requirement, finish and refresh refreshing of requirement stipulated number, when determining in the time critical values that is provided with, not finish the refreshing of stipulated number, be sent in to the refresh control unit and finish the control command that residue degree refreshes in excess time;
The refresh control unit is used to receive the control command that refreshes according to refresh interval and refreshing frequency of self-refresh decision package, refreshes according to the control command control random access memory that is received; Finished the control command that residue degree refreshes according to what receive in excess time, the control random access memory is finished refreshing of residue degree in excess time.
Wherein, the described decision package that refreshes comprises: refresh the policy store module and refresh tactful determination module, wherein,
Refresh the policy store module, be used for the mapping relations of memory access closeness and refresh interval, refreshing frequency, and offer and refresh tactful determination module;
Refresh tactful determination module, be used for calculating the visit closeness, according to the visit closeness of being calculated and come the described mapping relations of self-refresh policy store module to determine refresh interval and refreshing frequency, send the control command that refreshes according to refresh interval and refreshing frequency to the refresh control unit, in the stipulated time of refreshing requirement, finish and refresh refreshing of requirement stipulated number; When determining in the time critical values that is provided with, not finish the refreshing of stipulated number, be sent in to the refresh control unit and finish the control command that residue degree refreshes in excess time.
Preferably, the described variation that refreshes tactful determination module according to refresh time and refreshing frequency, excess time and needed least residue time of residue degree in this stipulated time of dynamic calculation, if the excess time of dynamic calculation is greater than the needed least residue of the residue degree time, and when reaching default threshold value with the difference of least residue time, with this excess time temporarily as the time critical values that refreshes in this stipulated time, and determine in the time critical values that is provided with, not finish refreshing of stipulated number;
Perhaps, describedly refresh tactful determination module according to determining whether in the time critical values that is provided with, not finish refreshing of stipulated number according to refreshing the time critical values that sets in advance of storing in the policy store module.
Preferably, described refresh control unit comprises: main control module and signal generation module, wherein,
The main control module is used to receive the control command that refreshes according to refresh interval and refreshing frequency of self-refresh decision-making module, according to the control command that is received, sends refresh command according to refresh interval and refreshing frequency to the signal generation module and generates instruction; That receive the self-refresh decision-making module finishes the control command that residue degree refreshes in excess time, according to the control command that is received, generate instruction to the refresh command that the signal generation module sends residue degree according to refresh needed minimum interval at every turn; Perhaps generate instruction to the refresh command that the signal generation module sends residue degree according to the average time interval that refreshes in excess time at every turn;
The signal generation module is used for generating instruction according to the refresh command that comes the Autonomous Control module, generates refresh command, sends to random access memory.
Wherein, the refreshing apparatus of random access memory can be arranged in the controller of random access memory, and the main control module in the described device can be arranged in the controller unit in the ram controller, and the signal generation module in the described device can be arranged in the control signal maker unit in the ram controller.
From such scheme as can be seen, set in advance the mapping relations of visit closeness and refresh interval, refreshing frequency among the present invention; Calculate the visit closeness, determine refresh interval and refreshing frequency, random access memory is refreshed according to determined refresh interval and refreshing frequency according to visit closeness of being calculated and set mapping relations.The present invention is set to when visit is intensive by the mapping relations of visiting closeness and refresh interval, refreshing frequency, and refresh interval is long, refreshing frequency is few; When visit was sparse, refresh interval was short, refreshing frequency is many, made when visit is intensive, had reduced refreshing frequency, and when visit is sparse, had increased refreshing frequency, thereby refreshed under the situation of requirement in assurance, improved the efficient and the reliability of visit.
Description of drawings
Fig. 1 is the method for refreshing process flow diagram of random access memory in the embodiment of the invention.
Fig. 2 is the refreshing apparatus structural representation of random access memory in the embodiment of the invention.
Fig. 3 is concrete structural representation of using the example of random access memory refreshing apparatus in the embodiment of the invention.
Embodiment
Basic thought of the present invention is: the mapping relations that visit closeness and refresh interval, refreshing frequency are set; Calculate the visit closeness, determine refresh interval and refreshing frequency according to visit closeness of being calculated and set mapping relations, refresh according to determined refresh interval and refreshing frequency control random access memory, in the stipulated time of refreshing requirement, finish and refresh refreshing of requirement stipulated number.
For making the purpose, technical solutions and advantages of the present invention clearer, below in conjunction with embodiment and accompanying drawing, the present invention is described in more detail.
Random access memory generally all has the requirement of refreshing, and promptly requires to finish refreshing of stipulated number at the appointed time, as requires to finish in the time at T and refresh for N time etc.Therefore, basic thought of the present invention is meant in each stipulated time, and according to the visit closeness, control refreshes random access memory, during stipulated number in refreshing frequency reaches this stipulated time, waits for the arrival of next stipulated time.
In addition, in order to ensure finishing refreshing of stipulated number at the appointed time, time critical values can be set, in order to when reaching time critical values, not finish under the situation that stipulated number refreshes, the control random access memory is finished refreshing of residue degree in excess time, afterwards, wait for the arrival of next stipulated time.
Wherein, the visit closeness computing method can for: set in advance the sampling clock periodicity, be recorded in this sampling clock periodicity, the clock periodicity that random access memory is accessed, calculate the number percent that the accessed clock periodicity of random access memory takies the sampling clock periodicity, obtain visiting closeness.
Perhaps, the visit closeness computing method can also for: set in advance the sampling clock periodicity, be recorded in this sampling clock periodicity the clock periodicity of random access memory free time; The clock periodicity that calculates the random access memory free time takies the number percent of sampling clock periodicity, obtains visiting closeness.
Be described in detail below in conjunction with the method for refreshing of specific embodiment random access memory among the present invention.
In the present embodiment,, be provided with time critical values in order to guarantee to finish refreshing of stipulated number at the appointed time.And in the present embodiment, set in advance and calculate the required sampling clock periodicity of visit closeness.
Referring to Fig. 1, Fig. 1 is the method for refreshing process flow diagram of random access memory in the embodiment of the invention.This flow process comprises the steps:
Step 101 is provided with the mapping relations of visit closeness and refresh interval, refreshing frequency; The sampling clock periodicity is set; Time critical values is set.
The method to set up of the mapping relations of visit closeness and refresh interval, refreshing frequency is as follows:
According to refreshing requirement and roughly visit situation or experience, the mapping relations of visit closeness and refresh interval, refreshing frequency are set, during actual the setting, the mapping relations of the interval and refresh interval of the scope of visit closeness, refreshing frequency can be set, promptly when the visit closeness that calculates some when interval, can next time or continuously down several times (refreshing frequency) all refresh according to certain time interval (refresh interval), as the mapping relations table shown in the table one can be set:
The value of visit closeness X Refresh interval Refreshing frequency
0<X≤20 P1 N1
20<X≤40 P2 N2
40<X≤60 P3 N3
60<X≤80 P4 N4
80<X≤100 P5 N5
Table one
To visit closeness in the table one and be divided into 5 intervals, and each an interval corresponding refresh interval value and a refreshing frequency value.In the practical application, the division in scope interval can have a variety of, and the value of P1 to P5 and N1 to N5 also can have a variety of, specifically can carry out interval division and value according to actual conditions, is that example describes with division in the table one and value only in the present embodiment.
In the present embodiment, when the visit closeness be positioned at the interval (0,20] time, corresponding refresh interval is P1, refreshing frequency is N1, promptly visit closeness be positioned at the interval (0,20] time, carry out N1 time refresh, and the refresh interval time is P1 at every turn.Afterwards, refresh accordingly according to new visit closeness and refresh interval thereof and refreshing frequency again.Identical therewith for other visit closeness in the table one with the relation of its refresh interval and refreshing frequency, repeat no more herein.
Wherein, the visit closeness can be actual access time density, also can be actual free time density.
The method to set up of sampling clock periodicity is as follows:
The sampling clock periodicity can carry out corresponding value according to actual conditions, to be operated in 100MHz, refreshing requirement is example for refresh 4096 times SDRAM in 64ms, be to be 64ms the stipulated time, stipulated number is 4096 times, according to frequency of operation and refresh requirement to calculate the time interval of on average refreshing be 1562 clock period at every turn.In this step, when the sampling clock periodicity is set, can be set to about 1/10th of the average time interval of at every turn refreshing, as choosing 100 clock period as the sampling clock periodicity; Perhaps, also can rule of thumb be worth in the practical application, the sampling clock cycle is provided with.
The method to set up of time critical values is as follows:
For being provided with of time critical values two kinds of methods can be arranged, first method is: set in advance static time critical values, in order to ensure refreshing refreshing of requirement stipulated number refreshing to finish in the stipulated time of requirement, can take the most conservative time critical values setting, it is all very big always to visit closeness before this time critical values of i.e. hypothesis arrival, and once refresh all and do not carry out, then need finish all refreshing frequencies in the excess time after critical value.When therefore being provided with, can be provided with, multiply by stipulated number, obtain the required least residue time, deduct the least residue time with the stipulated time then, obtain time critical values with minimum interval according to refresh needed minimum interval at every turn.
Still to be operated in 100MHz, refreshing requirement is example for refresh 4096 times SDRAM in 64ms, suppose to refresh needed minimum interval is 8 clock period at every turn, then refreshing the needed least residue time for 4096 times is 4096 * 8=32768 clock period, be about 0.33ms, therefore time critical values can be set is 64-0.33=63.67ms, for insurance more, can time critical values be set to 63ms, or 62ms etc., guaranteeing to visit smoothly simultaneously, can finish refreshing of residue degree in excess time as long as guarantee.
Second method for the time critical values setting is: dynamically arrange time critical values, promptly along with constantly carrying out of refreshing at the appointed time, variation according to refresh time and refreshing frequency, the needed least residue time of dynamic calculation excess time and residue degree, when excess time greater than and near the needed least residue of residue degree during the time, with this excess time temporarily as the time critical values that refreshes in this stipulated time.Further, a threshold value also can be set, when excess time of dynamic calculation greater than the needed least residue of the residue degree time, and when reaching set threshold value with the difference of least residue time, with this excess time temporarily as the time critical values that refreshes in this stipulated time.
Certainly, when adopting second method that time critical values is set, the calculating of this time critical values and setting are not to be to finish in this step 101, but in whole process flow operation process dynamic calculation, to put in this step and be described, just in order to compare with first method.
Step 102 is calculated the visit closeness, according to the mapping relations that are provided with in visit closeness and the step 101, determines refresh interval and refreshing frequency.
In this step, in the sampling clock periodicity that in step 101, is provided with, the accessed clock periodicity of record random access memory, the clock periodicity that calculates this visit takies the number percent of sampling clock periodicity, obtains visiting closeness; Perhaps by in the sampling clock periodicity, the clock periodicity of record random access memory free time calculates the number percent that this idle clock periodicity takies the sampling clock periodicity, obtains visiting closeness.Concrete which kind of computing method that adopt can determine according to the implication of visit closeness in the table one.
After calculating the visit closeness,, determine refresh interval and refreshing frequency according to the mapping relations that are provided with in visit closeness of being calculated and the step 101.
Step 103 refreshes according to determined refresh interval and refreshing frequency control random access memory.
During specific implementation, can send refresh command to random access memory according to determined refresh interval and refreshing frequency.
Step 104 judges whether to reach time critical values, if do not reach, then execution in step 105; Otherwise, execution in step 106.
If time critical values is to adopt the first method of describing in the step 101 to be provided with, then directly compares judgement in this step and get final product with the quiet hour critical value that is provided with.
If time critical values is to adopt the second method of describing in the step 101 to be provided with, then in this step, then need to judge excess time whether greater than and approach the needed least residue of the residue degree time, if then judge to reach time critical values.Perhaps set in advance threshold value, whether then needed to judge excess time in this step, and reached set threshold value, if then judge to reach time critical values with the difference of least residue time greater than the needed least residue of the residue degree time.
Step 105 judges whether refreshing frequency reaches stipulated number, if then execution in step 107; Otherwise, return execution in step 102.
Step 106 judges whether refreshing frequency reaches stipulated number, if then execution in step 107; Otherwise, execution in step 108.
If time critical values is to adopt the second method of describing in the step 101 to be provided with, then in this step, need not to judge whether refreshing frequency reaches stipulated number, but direct execution in step 108.
Step 107 finishes refreshing in this stipulated time, continues execution in step 109 afterwards.
Step 108, the control random access memory is finished refreshing of residue degree in excess time, continue execution in step 109 afterwards.
In this step, if the time critical values that is provided with in the step 101 is 63ms, and when reaching 63ms, finished 4000 times refresh, then controlled random access memory and in last 1ms, finish remaining 96 times.
During specific implementation, can be according to refresh needed minimum interval sends refresh command from residue degree to random access memory at every turn.As being that 8 clock period are example still, then can send a refresh command every 8 clock period to random access memory according to residue degree in the zero hour of excess time with the required minimum interval of random access memory.
Perhaps during specific implementation, send the refresh command of residue degree to random access memory, be about to residue degree and be evenly distributed in excess time according to the average time interval that refreshes in excess time at every turn.With the excess time is 1ms, residue degree be 96 times for example, then 1ms is about 99968 clock period, for 96 times, average each time interval was 99968 a ÷ 96=1041 clock period, to be on the safe side, average time interval can value less than 1041, as value 1000 etc., then can send a refresh command every 1000 clock period to random access memory according to residue degree in the zero hour of excess time.
Above-mentioned two kinds of situations can promptly send first refresh command in the zero hour of excess time.
Step 109, whether the next stipulated time of judgement arrives, if arrive, then returns execution in step 102.
So far, this flow process finishes.
In the flow process shown in Figure 1, step 103 and step 104 do not have absolute precedence relationship, can be when step 103 be carried out, the time of step 104 is judged.
Wherein, when calculating the visit closeness in the step 102, can carry out in the cycle at the sampling clock after step 103 is finished this refreshing frequency of determining, the sampling clock that also can refresh the last time before carrying out carried out in the cycle.Be exemplified below: if the sampling clock periodicity that sets in advance is 100 clock period, this refresh interval of determining is 1000 clock period, refreshing frequency is 3, when then calculating visit density, can in 100 clock period of finishing after refreshing for the last time, carry out, also can be in 100 clock period of refreshing the last time before carrying out, promptly refresh for the last time carry out before, carry out during refresh interval time timing to 900 clock.
Again the device based on the random access memory of method shown in Figure 1 is described in detail below.
Referring to Fig. 2, Fig. 2 is the refreshing apparatus structural representation of random access memory in the embodiment of the invention.As shown in Figure 2, this device comprises: refresh decision package 210 and refresh control unit 220.
Wherein, refresh decision package 210, be used for the mapping relations of memory access closeness and refresh interval, refreshing frequency; Calculate the visit closeness, mapping relations according to visit closeness of being calculated and described storage are determined refresh interval and refreshing frequency, send the control command that refreshes according to refresh interval and refreshing frequency to refresh control unit 220, in the stipulated time of refreshing requirement, finish refreshing of the stipulated number that refreshes requirement.
Wherein, can be by the pre-configured strategy that refreshes, the mapping relations of visit closeness and refresh interval, refreshing frequency are configured in refresh in the decision package 210.
Refresh decision package 210 when the closeness that conducts interviews is calculated, can be by interrogation signal being sampled at the sampling period number that sets in advance, the accessed clock periodicity of record random access memory, the clock periodicity that calculates this visit takies the number percent of sampling clock periodicity, obtains visiting closeness; Perhaps by in default sampling clock periodicity, the clock periodicity of record random access memory free time calculates the number percent that this idle clock periodicity takies the sampling clock periodicity, obtains visiting closeness.Concrete which kind of computing method that adopt can determine according to the implication of visit closeness in the pre-configured mapping relations.
Refresh control unit 220 is used to receive the control command that refreshes according to refresh interval and refreshing frequency of self-refresh decision package 210, refreshes according to the control command control random access memory that is received.
As shown in Figure 2, during specific implementation, refreshing decision package 210 can specifically comprise: refresh policy store module 211 and refresh tactful determination module 212.
Wherein, refresh policy store module 211, be used for the mapping relations of memory access closeness and refresh interval, refreshing frequency, and offer and refresh tactful determination module 212.
Can be by the pre-configured strategy that refreshes, the mapping relations of visit closeness and refresh interval, refreshing frequency are configured in refresh in the policy store module 211.
Refresh tactful determination module 212, be used for calculating the visit closeness, according to the visit closeness of being calculated and come the described mapping relations of self-refresh policy store module 211 to determine refresh interval and refreshing frequency, send the control command that refreshes according to refresh interval and refreshing frequency to refresh control unit 220, in the stipulated time of refreshing requirement, finish refreshing of the stipulated number that refreshes requirement.
Refresh tactful determination module 212 when the closeness that conducts interviews is calculated, can be by in the sampling period number that sets in advance, interrogation signal being sampled, the accessed clock periodicity of record random access memory, the clock periodicity that calculates this visit takies the number percent of sampling clock periodicity, obtains visiting closeness; Perhaps by in default sampling clock periodicity, the clock periodicity of record random access memory free time calculates the number percent that this idle clock periodicity takies the sampling clock periodicity, obtains visiting closeness.Concrete which kind of computing method that adopt can determine according to the implication of visit closeness in the pre-configured mapping relations.
Wherein, refresh policy store module 211 and refresh tactful determination module 212 and may further be:
Refreshing policy store module 211 is further used for: the time critical values that sets in advance of storage, and offer and refresh tactful determination module 212.
Refreshing tactful determination module 212 is further used for: acquisition time critical value from refresh policy store module 211, when determining in time critical values, not finish the refreshing of stipulated number, be sent in to refresh control unit 220 and finish the control command that residue degree refreshes in excess time.
Then refresh control unit 220 is further used for: finished the control command that residue degree refreshes according to what receive in excess time, the control random access memory is finished refreshing of residue degree in excess time.
Perhaps, refresh policy store module 211 and refresh tactful determination module 212 and may further be:
Refresh policy store module 211 and be not used in the time critical values that storage sets in advance, be further used for but refresh tactful determination module 212: according to the second method dynamic calculation time critical values that time critical values is set described in the process step 101 shown in Figure 1, when determining in time critical values, not finish the refreshing of stipulated number, be sent in to refresh control unit 220 and finish the control command that residue degree refreshes in excess time.
Then refresh control unit 220 is further used for: finished the control command that residue degree refreshes according to what receive in excess time, the control random access memory is finished refreshing of residue degree in excess time.
During specific implementation, refresh control unit 220 can specifically comprise: main control module 221 and signal generation module 222.
Wherein, main control module 221, be used to receive the control command that refreshes according to refresh interval and refreshing frequency of self-refresh decision-making module 210,, send refresh commands according to refresh interval and refreshing frequency to signal generation module 222 and generate instruction according to the control command that is received.
In addition, main control module 211 is further used for, that receive self-refresh decision-making module 210 finishes the control command that residue degree refreshes in excess time, according to the control command that is received, in excess time, send the refresh command generation instruction of residue degree continuously to signal generation module 222.
Wherein, the refresh command that continuously sends residue degrees to signal generation module 222 generate instruction can for: main control module 211 generates instruction according to refresh needed minimum interval at every turn to the refresh command that signal generation module 222 sends residue degrees; Perhaps main control module 211 generates instruction according to the average time interval that refreshes in excess time at every turn to the refresh command that signal generation module 222 sends residue degree.
Signal generation module 222 is used for generating instruction according to the refresh command that comes Autonomous Control module 221, generates refresh command, sends to random access memory.
In the practical application, the refreshing apparatus of random access memory can be arranged in the controller of random access memory, as shown in Figure 3, Fig. 3 is the structural representation of the ram controller of the above-mentioned random access memory refreshing apparatus of application.In the controller shown in Figure 3, the main control module 221 of the refresh control unit 220 of device shown in Figure 2 is arranged in the controller unit 301 in the controller, signal generation module 222 is arranged in the control signal maker unit 302 in the controller, to refresh decision package 210 and be set to a separate unit separately, in addition, this controller also comprises: random access memory status register 303 and data latches 304.
Wherein, controller unit 301 is except the function with main control module 221, also be used for according to the visit of central processing unit and the state of random access memory status register 303 random access memory, control control signal maker unit 302 sends the required control signal of read-write to random access memory, and the data that 304 pairs of needs of control data latch write and need read random register latch, carry out the existing operation such as mutual grade of control information simultaneously with central processing unit, no longer be described in detail herein.
Ram controller shown in Figure 3 is when specific implementation, central processing unit can dispose in refreshing decision package 210 in advance and refresh strategy, be included in and refresh the mapping relations that visit closeness and refresh interval, refreshing frequency are set in the policy store module 211, and the sampling clock periodicity is set; Time critical values etc. is set, be used to offer and refresh tactful determining unit 212, then refresh tactful determining unit 212 by in the sampling clock periodicity that is provided with, the accessed clock periodicity of record random access memory, the clock periodicity that calculates this visit takies the number percent of sampling clock periodicity, obtains visiting closeness; Perhaps by in the sampling clock periodicity, the clock periodicity of record random access memory free time calculates the number percent that this idle clock periodicity takies the sampling clock periodicity, obtains visiting closeness.Concrete which kind of computing method that adopt can determine according to the implication of visit closeness in the table one.Refresh tactful determining unit 212 according to visit closeness that calculates and the mapping relations that set in advance, determine refresh interval and refreshing frequency, according to determined refresh interval and refreshing frequency, send the control command that refreshes according to refresh interval and refreshing frequency to controller unit 301, when finishing the refreshing of the stipulated number that refreshes requirement in the stipulated time of refreshing requirement, stop to send; And in next stipulated time arrival, repeat above-mentioned functions.
Controller unit 301, receive the control command that refreshes according to refresh interval and refreshing frequency of self-refresh decision-making determination module 212, according to the control command that is received, send refresh command according to refresh interval and refreshing frequency to control signal maker unit 302 and generate instruction, control signal maker unit 302, the refresh command that receives from controller unit 301 generates instruction, generates instruction according to the refresh command that is received, generate refresh command, send to random access memory.
Further, refreshing refreshing policy store module 211 and refreshing tactful determination module 212 in the decision package 210 among Fig. 3 also may further be:
Refreshing policy store module 211 is further used for: the time critical values that sets in advance of storage, and offer and refresh tactful determination module 212.
Refreshing tactful determination module 212 is further used for: acquisition time critical value from refresh policy store module 211, when determining in time critical values, not finish the refreshing of stipulated number, be sent in to refresh control unit 220 and finish the control command that residue degree refreshes in excess time.
Perhaps, refreshing refreshing policy store module 211 and refreshing tactful determination module 212 in the decision package 210 among Fig. 3 may further be:
Refresh policy store module 211 and be not used in the time critical values that storage sets in advance, be further used for but refresh tactful determination module 212: according to the second method dynamic calculation time critical values that time critical values is set described in the process step 101 shown in Figure 1, when determining in time critical values, not finish the refreshing of stipulated number, be sent in to refresh control unit 220 and finish the control command that residue degree refreshes in excess time.
Then controller unit 301 is further used for, that receive self-refresh decision-making module 210 finishes the control command that residue degree refreshes in excess time, according to the control command that is received, in excess time, send the refresh command generation instruction of residue degree continuously to control signal maker unit 302.
Wherein, the refresh command that continuously sends residue degrees to control signal maker unit 302 generate instruction can for: controller unit 301 generates instruction according to refresh needed minimum interval at every turn to the refresh command that control signal maker unit 302 sends residue degrees; Perhaps controller unit 301 generates instruction according to the average time interval that refreshes in excess time at every turn to the refresh command that control signal maker unit 302 sends residue degree.
Above-described specific embodiment; purpose of the present invention, technical scheme and beneficial effect are further described; institute is understood that; the above only is specific embodiments of the invention; and be not intended to limit the scope of the invention; within the spirit and principles in the present invention all, any modification of being made, be equal to replacement, improvement etc., all should be included within protection scope of the present invention.

Claims (13)

1, a kind of method for refreshing of random access memory is characterized in that, sets in advance the mapping relations of visit closeness and refresh interval, refreshing frequency, and this method comprises:
A, calculating visit closeness are determined refresh interval and refreshing frequency according to the mapping relations of visit closeness of being calculated and described setting, refresh according to determined refresh interval and refreshing frequency control random access memory;
B, repeated execution of steps A finish in the stipulated time of refreshing requirement and refresh refreshing of requirement stipulated number; If determine in the time critical values that is provided with, not finish refreshing of stipulated number, then control random access memory and finish refreshing of residue degree in excess time at the appointed time.
2, the method for claim 1 is characterized in that, described according to determined refresh interval and refreshing frequency control random access memory refresh for: send refresh command according to determined refresh interval and refreshing frequency to random access memory.
3, the method for claim 1 is characterized in that, the mapping relations of described visit closeness and refresh interval, refreshing frequency comprise: the scope interval of visit closeness and the mapping relations of refresh interval, refreshing frequency.
4, the method for claim 1, it is characterized in that, described control random access memory finish in excess time at the appointed time residue degree refresh for: according to refresh needed minimum interval sends refresh command from residue degree to random access memory at every turn; Perhaps according to refresh average time interval in excess time sends refresh command from residue degree to random access memory at every turn.
5, the method for claim 1 is characterized in that, described time critical values is the quiet hour critical value that sets in advance.
6, method as claimed in claim 5 is characterized in that, described quiet hour critical value is: be provided with according to the stipulated number that refreshes needed minimum interval and refresh in the requirement at every turn.
7, the method for claim 1 is characterized in that, described time critical values is the time critical values of dynamic calculation;
And the time critical values of described dynamic calculation is: according to the variation of refresh time and refreshing frequency, excess time and needed least residue time of residue degree in this stipulated time of dynamic calculation, if the excess time of dynamic calculation is greater than the needed least residue of the residue degree time, and when reaching default threshold value with the difference of least residue time, with this excess time temporarily as the time critical values that refreshes in this stipulated time.
As each described method in the claim 1 to 7, it is characterized in that 8, described calculating visit closeness specifically comprises:
The sampling clock periodicity is set; Be recorded in this sampling clock periodicity the clock periodicity that random access memory is accessed; Calculate the number percent that the accessed clock periodicity of random access memory takies the sampling clock periodicity, obtain visiting closeness;
Perhaps, described Time Calculation visit closeness according to the visit random access memory specifically comprises:
The sampling clock periodicity is set; Be recorded in this sampling clock periodicity the clock periodicity of random access memory free time; The clock periodicity that calculates the random access memory free time takies the number percent of sampling clock periodicity, obtains visiting closeness.
9, a kind of refreshing apparatus of random access memory is characterized in that, this device comprises: refresh decision package and refresh control unit, wherein,
Refresh decision package, be used for the mapping relations of memory access closeness and refresh interval, refreshing frequency; Calculate the visit closeness, mapping relations according to visit closeness of being calculated and described storage are determined refresh interval and refreshing frequency, send the control command that refreshes according to refresh interval and refreshing frequency to the refresh control unit, in the stipulated time of refreshing requirement, finish and refresh refreshing of requirement stipulated number, when determining in the time critical values that is provided with, not finish the refreshing of stipulated number, be sent in to the refresh control unit and finish the control command that residue degree refreshes in excess time;
The refresh control unit is used to receive the control command that refreshes according to refresh interval and refreshing frequency of self-refresh decision package, refreshes according to the control command control random access memory that is received; Finished the control command that residue degree refreshes according to what receive in excess time, the control random access memory is finished refreshing of residue degree in excess time.
10, device as claimed in claim 9 is characterized in that, the described decision package that refreshes comprises: refresh the policy store module and refresh tactful determination module, wherein,
Refresh the policy store module, be used for the mapping relations of memory access closeness and refresh interval, refreshing frequency, and offer and refresh tactful determination module;
Refresh tactful determination module, be used for calculating the visit closeness, according to the visit closeness of being calculated and come the described mapping relations of self-refresh policy store module to determine refresh interval and refreshing frequency, send the control command that refreshes according to refresh interval and refreshing frequency to the refresh control unit, in the stipulated time of refreshing requirement, finish and refresh refreshing of requirement stipulated number; When determining in the time critical values that is provided with, not finish the refreshing of stipulated number, be sent in to the refresh control unit and finish the control command that residue degree refreshes in excess time.
11, described device as claimed in claim 10, it is characterized in that, the described variation that refreshes tactful determination module according to refresh time and refreshing frequency, excess time and needed least residue time of residue degree in this stipulated time of dynamic calculation, if the excess time of dynamic calculation is greater than the needed least residue of the residue degree time, and when reaching default threshold value with the difference of least residue time, with this excess time temporarily as the time critical values that refreshes in this stipulated time, and determine in the time critical values that is provided with, not finish refreshing of stipulated number;
Perhaps, describedly refresh tactful determination module according to determining whether in the time critical values that is provided with, not finish refreshing of stipulated number according to refreshing the time critical values that sets in advance of storing in the policy store module.
12, device as claimed in claim 11 is characterized in that, described refresh control unit comprises: main control module and signal generation module, wherein,
The main control module is used to receive the control command that refreshes according to refresh interval and refreshing frequency of self-refresh decision-making module, according to the control command that is received, sends refresh command according to refresh interval and refreshing frequency to the signal generation module and generates instruction; That receive the self-refresh decision-making module finishes the control command that residue degree refreshes in excess time, according to the control command that is received, generate instruction to the refresh command that the signal generation module sends residue degree according to refresh needed minimum interval at every turn; Perhaps generate instruction to the refresh command that the signal generation module sends residue degree according to the average time interval that refreshes in excess time at every turn;
The signal generation module is used for generating instruction according to the refresh command that comes the Autonomous Control module, generates refresh command, sends to random access memory.
13, device as claimed in claim 12, it is characterized in that, this device is arranged in the controller of random access memory, and the main control module in the described device is arranged in the controller unit in the ram controller, and the signal generation module in the described device is arranged in the control signal maker unit in the ram controller.
CNB2006101621921A 2006-12-07 2006-12-07 Refurbishing method and device of random memorizer Expired - Fee Related CN100508060C (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CNB2006101621921A CN100508060C (en) 2006-12-07 2006-12-07 Refurbishing method and device of random memorizer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CNB2006101621921A CN100508060C (en) 2006-12-07 2006-12-07 Refurbishing method and device of random memorizer

Publications (2)

Publication Number Publication Date
CN1971759A CN1971759A (en) 2007-05-30
CN100508060C true CN100508060C (en) 2009-07-01

Family

ID=38112512

Family Applications (1)

Application Number Title Priority Date Filing Date
CNB2006101621921A Expired - Fee Related CN100508060C (en) 2006-12-07 2006-12-07 Refurbishing method and device of random memorizer

Country Status (1)

Country Link
CN (1) CN100508060C (en)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN100461679C (en) * 2007-06-04 2009-02-11 中国移动通信集团公司 Method for raising business identification effect
US8284615B2 (en) * 2010-12-28 2012-10-09 Hynix Semiconductor Inc. Refresh control circuit and method for semiconductor memory device
CN104318959B (en) * 2014-11-03 2018-03-09 深圳市金正方科技股份有限公司 Extend the method and apparatus of measuring instrument storage chip service life
CN107017016A (en) * 2017-03-30 2017-08-04 中国科学院计算技术研究所 A kind of memory refresh control method and device of anti-sequential wing passage attack
CN112114747B (en) * 2020-08-31 2024-02-09 山东华芯半导体有限公司 Method for improving NAND Flash read stability in SSD

Also Published As

Publication number Publication date
CN1971759A (en) 2007-05-30

Similar Documents

Publication Publication Date Title
US20110131371A1 (en) Method and system for refreshing dynamic random access memory
EP3142120B1 (en) Method, device and system for refreshing dynamic random access memory (dram)
CN100508060C (en) Refurbishing method and device of random memorizer
US8225064B2 (en) Storage region allocation system, storage region allocation method, and control apparatus
JP2018137034A (en) Directed automatic refresh synchronization
JP4869011B2 (en) Memory system
US9293187B2 (en) Methods and apparatus for refreshing digital memory circuits
CN106856098B (en) Device and method for refreshing DRAM or eDRAM
CN1989478A (en) Method and apparatus for dynamic DLL powerdown and memory self-refresh
CN102655022A (en) Refresh control circuit and method for semiconductor memory device
CN102326205A (en) Dynamic random access memory (DRAM) refresh
WO2014186229A1 (en) Methods and systems for smart refresh of dynamic random access memory
CN103019974B (en) memory access processing method and controller
CN101398793A (en) Memory control device and semiconductor processing apparatus
CN1629980B (en) Semiconductor memory device for reducing address access time and processing method thereof
US7746718B2 (en) Semiconductor memory, operating method of semiconductor memory, memory controller, and system
WO2005069148A3 (en) Memory management method and related system
US11922061B2 (en) Adaptive memory refresh control
CN109559770A (en) Memory chip with reduced baseline refresh rate with the additional refreshing to weak cells
CN106326145A (en) Control method and device for memory
CN101640065A (en) Refresh controller and refresh control method used for embedded DRAM
US6941415B1 (en) DRAM with hidden refresh
CN102543159B (en) Double data rate (DDR) controller and realization method thereof, and chip
US7046579B2 (en) Semiconductor storage device
KR100809960B1 (en) Circuit for refresh of semiconductor memory device and refresh method by the same

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
ASS Succession or assignment of patent right

Owner name: WUXI VIMICRO ELECTRONIC CO., LTD.

Free format text: FORMER OWNER: BEIJING ZHONGXING MICROELECTRONICS CO., LTD.

Effective date: 20110127

C41 Transfer of patent application or patent right or utility model
COR Change of bibliographic data

Free format text: CORRECT: ADDRESS; FROM: 100083 15/F, SHINING BUILDING, NO.35, XUEYUAN ROAD, HAIDIAN DISTRICT, BEIJING TO: 214028 610, NATIONAL INTEGRATED CIRCUIT DESIGN PARK (CHUANGYUAN BUILDING), NO.21-1, CHANGJIANG ROAD, NEW DISTRICT, WUXI CITY, JIANGSU PROVINCE

TR01 Transfer of patent right

Effective date of registration: 20110127

Address after: 214028 national integrated circuit design (21-1), Changjiang Road, New District, Jiangsu, Wuxi, China, China (610)

Patentee after: Wuxi Vimicro Co., Ltd.

Address before: 100083, Haidian District, Xueyuan Road, Beijing No. 35, Nanjing Ning building, 15 Floor

Patentee before: Beijing Vimicro Corporation

C17 Cessation of patent right
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20090701

Termination date: 20121207