CN100505533C - Frequency-independent voltage divider - Google Patents

Frequency-independent voltage divider Download PDF

Info

Publication number
CN100505533C
CN100505533C CNB038242923A CN03824292A CN100505533C CN 100505533 C CN100505533 C CN 100505533C CN B038242923 A CNB038242923 A CN B038242923A CN 03824292 A CN03824292 A CN 03824292A CN 100505533 C CN100505533 C CN 100505533C
Authority
CN
China
Prior art keywords
voltage divider
resistance device
frequency
distributed
divider arrangement
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CNB038242923A
Other languages
Chinese (zh)
Other versions
CN1689225A (en
Inventor
P·P·F·M·布鲁伊恩
A·J·M·埃梅里克
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Koninklijke Philips Electronics NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Koninklijke Philips Electronics NV filed Critical Koninklijke Philips Electronics NV
Publication of CN1689225A publication Critical patent/CN1689225A/en
Application granted granted Critical
Publication of CN100505533C publication Critical patent/CN100505533C/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H1/00—Constructional details of impedance networks whose electrical mode of operation is not specified or applicable to more than one type of network
    • H03H1/02—Constructional details of impedance networks whose electrical mode of operation is not specified or applicable to more than one type of network of RC networks, e.g. integrated networks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/5222—Capacitive arrangements or effects of, or between wiring layers
    • H01L23/5225—Shielding layers formed together with wiring layers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H7/00—Multiple-port networks comprising only passive electrical elements as network components
    • H03H7/24—Frequency- independent attenuators
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/5228—Resistive arrangements or effects of, or between, wiring layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/0802—Resistors only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/0805—Capacitors only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Abstract

The present invention relates to a frequency-independent voltage divider in which a compensation structure (10) for compensating a distributed parasitic capacitance of a resistor arrangement (20) is arranged between the resistor arrangement (20) and a substrate (50). Thereby, the compensation structure (10) shields the resistor arrangement (20) partly from the substrate (50), and thus shields the parasitic capacitance. This allows for an improved compensation.

Description

Voltage divider with frequency-independent
Technical field
The present invention relates to a kind of voltage divider arrangement, it comprises reference edge, be used for respect to the input of reference edge receiving inputted signal, be used for respect to reference edge the output of output signal is provided and be arranged on the substrate and be coupled between input and reference edge between resistance device.
Background technology
In this voltage divider arrangement, each building-out capacitor is integrated so that the branch compression functions with frequency-independent to be provided.From general prior art as can be known with the voltage divider of frequency-independent.For example, document US 6,100,750 disclose a kind of the beginning paragraph in institute define styles with voltage divider arrangement frequency-independent, wherein provide to have an end that is coupled to input and have the distributed compensation of the other end that is coupled to resistance device in distributed mode.Especially, described distributed compensation covers described conductor rail and is coupled to another conductor rail of input by the conductor rail (conductor track) of resistance device, to small part, and the insulator of described conductor rail and described another conductor rail insulation is formed.
Fig. 1 shows the schematic circuit diagram with the voltage divider of frequency-independent, and resistance device comprises that the resistance series connection that has more than two resistance arranges R 1To R M+1The arbitrary node that this series connection is arranged can be by parasitic capacitance CP kLoad.Building-out capacitor CCMP kBe coupling in relevant arbitrary node and be arranged between the input in circuit diagram left side.Therefore, the distributed parasitic capacitance CP of resistance R is compensated by distributed compensation CCMP.In Fig. 1, suppose last node M+1 ground connection on the circuit diagram right side.
In order to realize and the resistive performance of frequency-independent that the capacitive division on each node should accurately be mated with the resistive dividing potential drop.This means for all k (k=1,2 ... M), the equation below must satisfying:
CP k CCMP k = R 1 + R 2 + . . . + R k R k + 1 + R k + 2 + . . . + R M + 1 . - - - [ 1 ]
If the standard above satisfying, then to transmit all be with the frequency-independent of input signal to the signal of all from input to each node.Therefore, a plurality of outputs might be coupled to a plurality of nodes in case tell a plurality of all with the output signal of frequency-independent.
In the embodiment of a reality, can realize by means of integrated resistor with voltage divider frequency-independent based on above-mentioned principle.In this case, integrated resistor can be counted as the infinitesimal series resistance R of infinite number 1To R M+1, M approximates infinity wherein.
Fig. 2 shows the plane graph of the folding integrated resistor 20 of the curved shape (meanderingshape) that has as top description of the Prior Art.In order to satisfy above-mentioned standard, produce distributed compensation 10 by the conductive layer 10 that insulating barrier 30 separates by formation on resistance device 20.Integrated resistor 20 is connected between input 2 and the reference edge 1, and distributed compensation 10 also is connected with input 2.
Fig. 3 shows this end view known and voltage divider frequency-independent, wherein integrated resistor 20 and substrate or loading pad 50 are isolated by first insulator 40, and compensate by for example distributed compensation of conductor rail 10, described distributed compensation is isolated by second insulating barrier 30 and integrated resistor 20.For the smaller value of subscript k, ratio CP k/ CCMP kMust approach 0.This will mean CCMP kShould be increased to infinity.Yet, because the finite width of the entity of integrated resistor 20, so can't realize this point.Therefore, in compensation, produced intrinsic error.
Therefore, an object of the present invention is to provide a kind of and voltage divider arrangement frequency-independent, the compensation of the parasitic capacitance that can be improved by this voltage divider arrangement.
Summary of the invention
This purpose is by realizing as desired voltage divider arrangement in the claim 1.
Therefore, the method for the voltage divider of a kind of new structure and frequency-independent is suggested.The influence of parasitic capacitance is compensated by the compensation capacitance structure that is arranged between resistance device and the substrate.This new construction method provides better compensation, and has opened that these voltage dividers are used in integrated circuit technology or wherein known structure is new possibility in the situation that impossible accomplish.Because therefore the fact of collocation structure between resistance and substrate so collocation structure makes resistance and substrate partly isolated, and shielded parasitic capacitance.In known distributed resistance, every section parasitic capacitance of resistance equates, and in distributed resistance according to the present invention, parasitic capacitance equates with the summation of the area of building-out capacitor.This allows better compensation, and this is because the following fact: might be implemented in the ratio between parasitic capacitance and the building-out capacitor now, described ratio approaches 0 for the smaller value of k.
Resistance device can have curved shape, and can be made by polysilicon.Distributed compensation capacitance structure can comprise the conductor layer of for example triangular shaped reservation shape, and can be made by the suitable electric conducting material of for example heavily doped silicon.In addition, distributed compensation capacitance structure can be by insulating barrier and resistance device and substrate separation separately, and described insulating barrier can be made by the suitable electrically non-conductive material of for example silicon dioxide.The arrangement of this distributed compensation capacitance structure between insulating barrier provides the further advantage that depends on applied IC technology: described insulating barrier can bear than the bigger voltage in the known prior art structure.
Define further favourable development in the dependent claims.
Description of drawings
To the present invention be described in more detail according to preferred embodiment with reference to the accompanying drawings below, wherein:
Fig. 1 shows the schematic equivalent circuit diagram with the voltage divider of frequency-independent;
Fig. 2 shows the plane graph of the layout of known and voltage divider frequency-independent;
Fig. 3 shows the end view of known and voltage divider frequency-independent of Fig. 2;
Fig. 4 shows according to the preferred embodiment of the invention the end view with the voltage divider of frequency-independent;
Fig. 5 shows according to plane graph preferred embodiment and voltage divider frequency-independent; And
Fig. 6 shows according to having of preferred embodiment cross-sectional schematic side view splicing ear and voltage divider frequency-independent.
Embodiment
To preferred embodiment be described based on the integrated voltage divider of resistance device 20 now with curved shape.
Fig. 4 shows according to end view preferred embodiment and voltage divider frequency-independent.Opposite with the known devices of Fig. 3, distributed compensation capacitance structure 10 makes resistance device 20 partly isolated with substrate 50 now.Whereby, also conductively-closed of distributed parasitic capacitance.In the Known designs of Fig. 3, every section parasitic capacitance of resistance device 20 equates, and present parasitic capacitance CP kWith building-out capacitor CCMP kThe summation of area equate.This allows better compensation, because now might realize approaching 0 ratio CP for the smaller value of k k/ CCMP k, this is impossible in Known designs, because CCMP kThe infinity of will having to be increased to.
In order to realize optimal compensation, must be for each k=1,2 ... M determines the width D of the layer of compensation of distributed compensation capacitance structure kIn order to realize this point, suppose that the resistance of resistance device 20 all equates for every section k, i.e. R 1=R 2=...=R M+1
CP in addition k=CP Sq(DR-D k) WR, wherein CP SqBe the parasitic capacitance of per unit area resistance, WR is the width of the resistance entity of resistance device 20, and DR is the length of a resistive segments or the width of total electric resistance layout, and D kIt is width in the compensation capacitance structure at section k place.
Therefore, can following calculating building-out capacitor:
CCMP k＝CCMP sq·D k·WR [2]
According to equation [11], can obtain following equation:
CP sq · ( DR - D k ) CCMP sq · D k = k M + 1 - k - - - [ 3 ]
According to top equation [3], width that can following calculating collocation structure 10:
D k = DR 1 + k M + 1 - k · CCMP sq CP sq - - - [ 4 ]
The shape of resulting compensation capacitance structure 10 triangular shaped corresponding to as shown in Figure 5.This collocation structure 10 is arranged between resistance device 20 and the substrate 50, and separates by corresponding upper and lower insulating barrier 30,40.Last insulating barrier 30 and following insulating barrier 40 can be made by for example silicon dioxide or other suitable electrically non-conductive material.Compensation capacitance structure 10 can be made by heavily doped silicon or other suitable electric conducting material, and resistance device 20 can be made by polysilicon.
Fig. 6 show proposed have corresponding splicing ear isoboleses with voltage divider frequency-independent 1,2,3.Resistance device 20 places in bending provide input 2, output 3 and reference edge 1, wherein reference edge 1 and substrate 50 and electrically level be connected.In addition, schematically show equivalent parasitic capacitances, make the function of shielding of compensation capacitance structure become clear whereby.
The voltage divider of the improved and frequency-independent that is proposed especially can be used in the frequency applications, such as the RGB amplifier in television IC, radio frequency (RF) amplifier, oscilloprobe etc.
Can notice, the invention is not restricted to above preferred embodiment, but can be with any voltage divider arrangement of the distributed compensation capacitance structure that the distributed parasitic capacitance that is used for the compensating resistance device is provided therein.Especially, resistance device 20 and compensation capacitance structure 10 can have any suitable shape to obtain required compensation, for example so that satisfy the standard that proposes in the equation [1].And any other suitable electric conducting material can be used for realizing resistance device 20 and compensation capacitance structure.Therefore, preferred embodiment can change in the scope of appending claims.

Claims (6)

1. voltage divider arrangement, comprise reference edge (1), be used for input (2) with respect to described reference edge (1) receiving inputted signal, be used for providing the output (3) of output signal with respect to described reference edge (1), and be arranged at substrate (50) and go up and be coupling in resistance device (20) between described input (2) and the described reference edge (1), the distributed compensation capacitance structure (10) that wherein is used for compensating the influence of distributed parasitic capacitance is arranged between described resistance device (20) and the described substrate (50), described distributed compensation capacitance structure (10) is separated with described resistance device (20) and described substrate (50) by corresponding insulation layer (30,40).
2. according to the voltage divider arrangement of claim 1, wherein said resistance device (20) has crooked shape.
3. according to the voltage divider arrangement of claim 2, wherein said resistance device (20) is made by polysilicon.
4. according to any one voltage divider arrangement of front claim, wherein said distributed compensation capacitance structure (10) comprises the conductor layer of reservation shape.
5. according to the voltage divider arrangement of claim 4, wherein said reservation shape is triangular shaped.
6. according to the voltage divider arrangement of claim 4, wherein said conductor layer width in the horizontal direction is to select according to following equation:
D k = DR 1 + k M + 1 - k · CCMP sq CP sq ,
CP wherein SqThe parasitic capacitance of expression per unit area resistance, DR represents the length of described resistance device (20), and k represents the subscript of the section of described resistance device (20), and M represents the sum of the section of described resistance device (20), CCMP SqThe distributed compensation of expression per unit area resistance, and D kThe described width of representing described conductor layer.
CNB038242923A 2002-10-18 2003-09-19 Frequency-independent voltage divider Expired - Fee Related CN100505533C (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP02079336 2002-10-18
EP02079336.0 2002-10-18

Publications (2)

Publication Number Publication Date
CN1689225A CN1689225A (en) 2005-10-26
CN100505533C true CN100505533C (en) 2009-06-24

Family

ID=32103960

Family Applications (1)

Application Number Title Priority Date Filing Date
CNB038242923A Expired - Fee Related CN100505533C (en) 2002-10-18 2003-09-19 Frequency-independent voltage divider

Country Status (8)

Country Link
US (1) US7471137B2 (en)
EP (1) EP1556948A1 (en)
JP (1) JP2006506801A (en)
KR (1) KR20050067183A (en)
CN (1) CN100505533C (en)
AU (1) AU2003263532A1 (en)
TW (1) TW200427221A (en)
WO (1) WO2004036745A1 (en)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7079004B2 (en) 2003-10-10 2006-07-18 Agilent Technologies, Inc. Precision thin film AC voltage divider
US20090109981A1 (en) * 2007-10-25 2009-04-30 Michael Keselman Out-of-band management for broadband over powerline network
US20090124209A1 (en) * 2007-11-08 2009-05-14 Michael Keselman Methods and system for configuration of broadband over power lines
US20090125255A1 (en) * 2007-11-08 2009-05-14 Michael Keselman Methods and apparatus for measuring voltage and voltage phase angle on bpl line
US20090153133A1 (en) * 2007-12-13 2009-06-18 Michael Keselman Methods and apparatus for collecting characteristics of a power line a bpl system
US7577235B2 (en) 2008-01-09 2009-08-18 General Electric Company Voltage generator of a radiation generator
CN101932189B (en) * 2009-06-25 2012-09-05 北京普源精电科技有限公司 Measuring equipment and amplifying circuit, impedance component and multilayer printed circuit board thereof
CN101932191B (en) * 2009-06-25 2012-09-05 北京普源精电科技有限公司 Measuring equipment and amplifying circuit, impedance component and multilayer printed circuit board thereof
CN101932190B (en) * 2009-06-25 2012-09-05 北京普源精电科技有限公司 Measuring equipment and amplifying circuit, impedance component and multi-layer printed circuit board thereof
US10129973B2 (en) * 2016-06-17 2018-11-13 General Electric Company Voltage divider circuit assembly and method
KR101716434B1 (en) * 2016-08-10 2017-03-14 윈본드 일렉트로닉스 코포레이션 Semiconductor device
US11638345B2 (en) * 2021-04-05 2023-04-25 Fluke Corporation Feed forward compensation of parasitic capacitance in a device frontend

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4217408C1 (en) * 1992-05-26 1993-11-25 Texas Instruments Deutschland Integrated voltage divider
JP3390875B2 (en) * 1992-11-12 2003-03-31 日本テキサス・インスツルメンツ株式会社 Semiconductor device
JP3246541B2 (en) * 1994-06-06 2002-01-15 横河電機株式会社 Semiconductor device
WO1998009376A1 (en) * 1996-08-29 1998-03-05 Philips Electronics N.V. Frequency-independent voltage divider
US5744385A (en) * 1997-03-21 1998-04-28 Plato Labs, Inc. Compensation technique for parasitic capacitance
US6414367B1 (en) * 1999-10-28 2002-07-02 National Semiconductor Corporation Interconnect exhibiting reduced parasitic capacitance variation

Also Published As

Publication number Publication date
US7471137B2 (en) 2008-12-30
EP1556948A1 (en) 2005-07-27
WO2004036745A1 (en) 2004-04-29
JP2006506801A (en) 2006-02-23
US20050285660A1 (en) 2005-12-29
TW200427221A (en) 2004-12-01
AU2003263532A1 (en) 2004-05-04
KR20050067183A (en) 2005-06-30
CN1689225A (en) 2005-10-26

Similar Documents

Publication Publication Date Title
CN100505533C (en) Frequency-independent voltage divider
CN101142639B (en) Integrated circuit transformer devices for on-chip millimeter-wave applications
CN105453424A (en) Vector inductor having multiple mutually coupled metalization layers providing high quality factor
US20070170519A1 (en) Driver for Driving a Load Using a Charge Pump Circuit
CN103456709A (en) Integrated circuit based transformer
US20110273240A1 (en) Printed circuit board and layout method thereof
US20060197133A1 (en) MIM capacitor including ground shield layer
US7309906B1 (en) Apparatus and methods for providing highly effective and area efficient decoupling capacitance in programmable logic devices
US20190348355A1 (en) Isolator with symmetric multi-channel layout
US10998873B2 (en) Capacitor unit, integrated capacitor, and resonance unit
US6100750A (en) Frequency-independent voltage divider
CN101593777B (en) Capacitor structure and metal layer layout thereof
US11664367B2 (en) Protection against electrostatic discharges and filtering
CN206181552U (en) Circuit board and mobile terminal
US6539524B1 (en) Method and apparatus for matching capacitance of filters having different circuit topologies
US5923227A (en) Non-linear dispersive transmission line
JPH05235266A (en) Semiconductor integrated circuit device
US20040207041A1 (en) Capacitor arrangement and method for producing such a capacitor arrangement
JP4013734B2 (en) MIM capacity
CN116632001B (en) Semiconductor device and design assisting device for semiconductor device
KR100338335B1 (en) Semiconductor memory device having a plurality of storage regions
US8264301B2 (en) Modeling circuit of high-frequency device and modeling method thereof
CN106158738A (en) For strengthening the apparatus and method of the bandwidth in trench isolations integrated circuit
CN106226614A (en) A kind of test system and method for testing thereof
CN106410519A (en) Connector

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
ASS Succession or assignment of patent right

Owner name: NXP CO., LTD.

Free format text: FORMER OWNER: KONINKLIJKE PHILIPS ELECTRONICS N.V.

Effective date: 20070914

C41 Transfer of patent application or patent right or utility model
TA01 Transfer of patent application right

Effective date of registration: 20070914

Address after: Holland Ian Deho Finn

Applicant after: Koninkl Philips Electronics NV

Address before: Holland Ian Deho Finn

Applicant before: Koninklijke Philips Electronics N.V.

C14 Grant of patent or utility model
GR01 Patent grant
C17 Cessation of patent right
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20090624

Termination date: 20100919