CN100505348C - Light emitting device - Google Patents

Light emitting device Download PDF

Info

Publication number
CN100505348C
CN100505348C CNB2007100896847A CN200710089684A CN100505348C CN 100505348 C CN100505348 C CN 100505348C CN B2007100896847 A CNB2007100896847 A CN B2007100896847A CN 200710089684 A CN200710089684 A CN 200710089684A CN 100505348 C CN100505348 C CN 100505348C
Authority
CN
China
Prior art keywords
light
insulating barrier
emitting device
circuit layout
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CNB2007100896847A
Other languages
Chinese (zh)
Other versions
CN101047222A (en
Inventor
三瓶友广
野木新治
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Lighting and Technology Corp
Original Assignee
Toshiba Lighting and Technology Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Lighting and Technology Corp filed Critical Toshiba Lighting and Technology Corp
Publication of CN101047222A publication Critical patent/CN101047222A/en
Application granted granted Critical
Publication of CN100505348C publication Critical patent/CN100505348C/en
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation

Landscapes

  • Led Device Packages (AREA)

Abstract

The invention provides a light emitting device, wherein the light obtaining efficiency of light emitting device is not easy to loss even using resin base plate of good thermal conductivity. The light The invention provides a light emitting device, wherein the light obtaining efficiency of light emitting device is not easy to loss even using resin base plate of good thermal conductivity. The light emitting device comprises a resin base plate 14 with thermal conductivity of 1. 0~9.0W/m.K; white insulating layer 15 on the resin base plate; circuit charting layer 16 above the insulating layer; luemitting device comprises a resin base plate 14 with thermal conductivity of 1. 0~9.0W/m.K; white insulating layer 15 on the resin base plate; circuit charting layer 16 above the insulating layer; luminoous element 13 above the insulating layer and conductively connecting with circuit charting layer. minoous element 13 above the insulating layer and conductively connecting with circuit charting layer.

Description

Light-emitting device
Technical field
The present invention relates to use the light-emitting device of light-emitting component.
Background technology
In the past, for example as an example of light-emitting diode assembly, known in the box of light-emitting diode chip for backlight unit (groove) is set filled synthetic resin, light-emitting diode chip for backlight unit is sealed in surface installation type light-emitting diode assembly (with reference to patent documentation 1) in the box.
In addition, in this light-emitting diode assembly, known device with PPA synthetic resin such as (polyphtalamides) formation box, but the thermal conductivity of this synthetic resin is for for example about about 0.3W/mK, thermal diffusivity is low, so the problem that exists the luminous efficiency of light-emitting diode chip for backlight unit to rise and descend with temperature.
In addition, in the light-emitting diode assembly of known the 2nd kind of prior art, rise in order to suppress its temperature, on ceramic substrate, be drilled with louvre, and the auxiliary ceramic sheet is set in the inner surface side of this louvre, on this auxiliary ceramic sheet, light-emitting diode chip for backlight unit is installed, thereby has been realized the raising (with reference to patent documentation 2) of the thermal diffusivity of light-emitting diode chip for backlight unit.
Patent documentation 1: the Japan Patent spy opens the 2002-43625 communique
Patent documentation 2: the Japan Patent spy opens the 2002-353515 communique
Summary of the invention
When using the good resin of thermal diffusivity, can distribute the heat of light-emitting diode efficiently, prevent the decline of the luminous efficiency of light-emitting diode, but this resin is not white, therefore light reflectivity is lower, be absorbed easily from the light of light-emitting diode directive substrate, so there is the inefficient problem of the light that obtains light-emitting diode.
Even the object of the present invention is to provide the light-emitting device that efficient reduces that obtains of the light that uses the good resin substrate of thermal conductivity also to be difficult for making light-emitting component.
The 1st of the present invention is characterised in that, possess the thermal conductivity with 1.0～9.0W/mK resin substrate, be located at the insulating barrier of the white on the resin substrate, the light-emitting component of being located at circuit layout layer on the insulating barrier, being located on the insulating barrier and conducting with the circuit layout layer.
The resin that constitutes resin substrate makes thermal conductivity in 1.0～9.0W/mK scope by making the inorganic filler that contains 50～90 quality % in polyamide or the PPA synthetic resin base materials such as (polyphtalamides).By this resin substrate, can form the recess of configuration light-emitting component.In addition, resin substrate has electrical insulating property, thus not need and the circuit layout layer between form electric insulation layer, but the electric insulation layer of white is set in order to improve reflectivity among the present invention.
In addition, this resin is that thermal conductivity is the high-cooling property synthetic resin of 1.0～9.0W/mK, so can improve thermal diffusivity.Therefore, can suppress light-emitting component Yin Wendu rises and the decline of generation luminous efficiency.In addition, the thermal conductivity of resin substrate can be more than 9.0W/mK.Under this situation, the content of the inorganic filler that the synthetic resin base material is contained increases, and reduces so the synthetic resin base material is mobile, and workability descends, but thermal diffusivity is further improved.In addition, Bai Se insulating barrier can use the resin material of white.
The 2nd of the present invention is characterised in that, the resin substrate that possesses thermal conductivity with 1.0～9.0W/mK, be located at the insulating barrier of the white on the resin substrate, be located at the circuit layout layer on the insulating barrier, be located at the insulating barrier of substrate and the reflector on the circuit layout layer, the light-emitting component that central area in the incorporating section of reflector is located on the insulating barrier and is conducted with the circuit layout layer of the peripheral edge margin that is positioned at the incorporating section, described reflector have and are provided with the incorporating section of opening and the circuit layout layer is positioned at the structure of the peripheral edge margin of incorporating section on the insulating barrier of substrate and circuit layout layer corresponding to the light-emitting component allocation position.
The 3rd of the present invention is as the 2nd described light-emitting device to have in the face of the surface area ratio of the insulating barrier in the incorporating section relation bigger than the surface area ratio of circuit layout layer.
Of the present invention the 4th be as the 1st～3 in each described light-emitting device, at the reflectivity on 400～740nm wavelength region may inner insulating layer surface more than 85%.If less than 85%, then the efficient at the light of insulating barrier reflection self-emission device directive substrate-side is low, can't obtain the abundant raising of obtaining efficient of the light of light-emitting component at the reflectivity on 400～740nm wavelength region may inner insulating layer surface.
Of the present invention the 5th be as the 1st～4 in each described light-emitting device, it is characterized in that, contain the inorganic filler of 50～90 quality % in the synthetic resin system base material of resin substrate.
Inorganic filler is in aluminium oxide, magnesium oxide, beryllium oxide, silica, boron nitride, aluminium carbide, carborundum, boron carbide, titanium carbide, silicon nitride, diamond, iron, aluminium, the copper at least a kind, perhaps by constituting more than 2 kinds wherein.By adjusting the content of inorganic filler, can be easily the thermal diffusivity of resin substrate be adjusted to appropriate value.
The 6th of the present invention is as the 5th described light-emitting device, it is characterized in that, inorganic filler is the following almost sphericals of diameter 100 μ m.Inorganic filler is the sphere of diameter 100 μ m, so the injection moulding efficient of the injection molded of this high-cooling property synthetic resin is improved, can realize fine and close the filling.
If adopt the 1st described light-emitting device of the present invention, the insulating barrier of white is set on the good resin substrate of thermal diffusivity, the circuit layout layer is set, configuration light-emitting component and light-emitting component and circuit layout layer conducted on insulating barrier, therefore not only thermal diffusivity is good, and can reflect the light of self-emission device directive substrate-side by the insulating barrier of white efficiently, can improve light-emitting component light obtain efficient.
If adopt the 2nd described light-emitting device of the present invention, the insulating barrier of white is set on the good resin substrate of thermal diffusivity, the circuit layout layer is set, central area in the incorporating section of the reflector on being located at these insulating barriers and circuit layout disposes in the light-emitting component on insulating barrier, conduct by wire-bonded and the circuit layout layer that is positioned at the peripheral edge margin of incorporating section, therefore not only thermal diffusivity is good, and can reflect the light of self-emission device directive substrate-side by the insulating barrier of white efficiently, can improve light-emitting component light obtain efficient.
If adopt the 3rd described light-emitting device of the present invention, except the effect of light-emitting device of the present invention the 2nd, also owing to have in the face of the surface area ratio of the insulating barrier in the incorporating section relation bigger than the surface area ratio of circuit layout layer, therefore can reflect the light of self-emission device directive substrate-side by the insulating barrier of white efficiently, can improve light-emitting component light obtain efficient.
If adopt the 4th described light-emitting device of the present invention, in the 1st～3 of the present invention the effect of each light-emitting device, also since at the reflectivity on 400～740nm wavelength region may inner insulating layer surface more than 85%, therefore can reflect the light of self-emission device directive substrate-side by the insulating barrier of white efficiently, can improve light-emitting component light obtain efficient.
If adopt the 5th described light-emitting device of the present invention, the containing ratio of contained inorganic filler is 50 quality % in the synthetic resin system base material of resin substrate, the good synthetic resin of processability is 50 quality %, thus not only keep workability, and thermal diffusivity is improved.In addition, the content of inorganic filler is below 90%, thus thermal diffusivity is further improved, and, also can keep workability because the containing ratio of the good synthetic resin of processability has 10 quality %.
If adopt the 6th described light-emitting device of the present invention, inorganic filler is the following spheries of diameter 100 μ m, so the injection moulding raising of the high-cooling property synthetic resin can make injection molded the time can realize the densification of finishing die is filled.
Description of drawings
Fig. 1 is the part amplification sectional view of the light-emitting device of expression one embodiment of the present invention.
Fig. 2 is the part abridged amplification front view of above-mentioned light-emitting device.
Fig. 3 is the front elevation of above-mentioned light-emitting device.
Fig. 4 is the amplification sectional view of above-mentioned light-emitting device.
The explanation of symbol
11 ... light-emitting device, 13 ... as the light-emitting diode of light-emitting component, 14 ... resin substrate, 15 ... insulating barrier, 16 ... the circuit layout layer, 17 ... reflector, 19 ... the incorporating section.
Embodiment
Below, with reference to accompanying drawing, one embodiment of the present invention is described.Fig. 1 is the part amplification sectional view of light-emitting device, and Fig. 2 is the part abridged amplification front view of light-emitting device, and Fig. 3 is the front elevation of light-emitting device, and Fig. 4 is the amplification sectional view of light-emitting device.
Among the figure, light-emitting device 11 possesses light emitting module 12, and this light emitting module 12 is releasably installed with respect to the not shown light-emitting device main bodys such as appliance body of for example ligthing paraphernalia.In the light emitting module 12, a plurality of shaped like chips solid-state light emitting elements, be that light-emitting diode (light-emitting diode chip for backlight unit) 13 is rectangular arrangement as light-emitting component.Light-emitting diode 13 is for example to send the formations such as for example gallium nitride (GaN) based semiconductor that glow peak is the blue light of 450～460nm.
Light emitting module 12 has the resin substrate 14 that for example contains the inorganic filler of 50～90 quality % in polyamide or PPA synthetic resin such as (polyphtalamides) base material and have the thermal conductivity of 1.0～9.0W/mK, be formed at the insulating barrier 15 of the white of these substrate 14 one sides, be formed at circuit layout layer 16 on this insulating barrier 15, be integrally formed at the reflector 17 on these insulating barriers 15 and the circuit layout layer 16.
Insulating barrier 15 is formed by the white resin material with insulating properties, and the one side of substrate 14 is covered fully.Reflectivity on 400～740nm wavelength region may inner insulating layer, 15 surfaces better is more than 85%, if less than 85%, then the efficient at the light of insulating barrier 15 reflection self-luminous diode elements 13 directive substrates 14 sides is low, can't obtain the abundant raising of obtaining efficient of the light of light-emitting diode 13.
In the circuit layout layer 16, at allocation position as each light-emitting diode 13 of light-emitting component allocation position, the circuit layout (distribution Butut) 16a, the 16b that have formed cathode side and anode-side by alloy or Au, the Ag etc. of Cu and Ni.
Reflector 17 by will be for example PBT (polybutylene terephthalate (PBT)) or PPA (polyphtalamide), PC resins such as (Merlon) pour the one side of substrate 14 into and integrally formed, be formed with a plurality of incorporating sections 19 of taking in each light-emitting diode 13 at the allocation position of each light-emitting diode 13.Each incorporating section 19 is to form to the circular cone shape that opposition side enlarges gradually with respect to substrate 14.Around incorporating section 19, be formed with the lens fixed part 20 of fixing not shown lens with concentric shape.
Bottom in each incorporating section 19, the insulating barrier 15 of white is positioned at the most of of the central area that comprises these 19 bottoms, incorporating section and towards the incorporating section 19, but the end of the required MIN size of wire-bonded of circuit layout 16a, 16b is positioned at the peripheral edge margin of 19 bottoms, incorporating section.That is, have the surface area ratio relation bigger than the surface area ratio of circuit layout layer 16 in the face of the insulating barrier 15 in the incorporating section 19.
Each light-emitting diode 13 19 central area uses bonding agent etc. to be configured on the insulating barrier 15 in the incorporating section, and each electrode of light-emitting diode 13 and each circuit layout 16a, 16b conduct by the bonding wire 21 that adopts wire-bonded.
Be formed with the coating 22 of lining light-emitting diode 13 in each incorporating section 19.This coating 22 is with the diffusion layer 23 of lining light-emitting diode 13 with in luminescent coating 24 these 2 layers of formation of the upper-layer configured of this diffusion layer 23 19 the open side in the incorporating section.
Diffusion layer 23 is for to mix aluminium oxide (Al in Thermocurable transparent resins such as organic siliconresin with light transmission or epoxy resin 2O 3) or TiO 2, BaSO 4, SiO 2, SiO 2, Y 2O 3The layer that forms Deng diffusant is filled to than the high position of the light-emitting diode in the incorporating section 19 13 and its hot curing is formed by the resin that this has been mixed diffusant.The composition surface of diffusion layer 23 and luminescent coating 24 (interface) 25 forms with recessed flexure plane to light-emitting diode 13 sides (downside among Fig. 1).
Luminescent coating 24 is for mainly mixing reception from the blue light of light-emitting diode 13 and send the layer that the yellow fluorophor of yellow fluorescence forms in Thermocurable transparent resins such as organic siliconresin with light transmission or epoxy resin, the resin that will mix fluorophor after forming by the hot curing at diffusion layer 23 is filled in the incorporating section 19 and it is solidified to form.As fluorophor, yellow fluorophor is a main body, also can mix red-emitting phosphors etc.In addition, illuminated in combination device 11 and lens can constitute lighting device.
Below, the effect of light-emitting device 11 is described.If apply the direct voltage of regulation from the outside between circuit layout 16a, the 16b of each cathode side and anode-side, then each light-emitting diode 13 sends blue light.This blue light spreads to a plurality of directions by diffusion layer 23, incides in the luminescent coating 24, from a plurality of direction excitation yellow fluorophors, makes it send sodium yellow here.Then, mix from the blue light of light-emitting diode 13 with from the sodium yellow of yellow fluorophor, form white light, 19 penetrate to the outside from the incorporating section.
Therefore, in this light-emitting device 11, by diffusion layer 23 with the small luminous diffusion of light-emitting diode 13 to a plurality of directions, yellow fluorophor from a plurality of direction activating fluorescent body layers 24, make it send sodium yellow, and this sodium yellow and blue light are mixed, and make it send white light, be divided into sodium yellow and blue light so can reduce white light.
In addition, this resin has the high-cooling property that thermal conductivity is 1.0～9.0W/mK, so the heat of light-emitting diode 13 can be transmitted to resin substrate 14, thermal diffusivity is improved.Therefore, can suppress the rise decline of luminous efficiency of the light-emitting diode 13 cause of temperature.
In addition, can reflect the light of self-luminous diode element 13 directive substrates 14 sides efficiently by the insulating barrier 15 of white, therefore can improve light-emitting diode 13 light obtain efficient.
Particularly since have in the face of the surface area ratio of the insulating barrier 15 in the incorporating section 19 than the big relation of the surface area ratio of circuit layout layer 16 and at the reflectivity on 400～740nm wavelength region may inner insulating layer, 15 surfaces more than 85%, can reflect the light of self-luminous diode element 13 directive substrates 14 sides by the insulating barrier 15 of white efficiently, can further improve light-emitting diode 13 light obtain efficient.

Claims (5)

1. light-emitting device, it is characterized in that, comprise the thermal conductivity with 1.0～9.0W/mK resin substrate, be located at the insulating barrier of the white on the resin substrate, the light-emitting component of being located at circuit layout layer on the insulating barrier, being located on the insulating barrier and conducting with the circuit layout layer, the reflectivity of aforementioned dielectric laminar surface is more than 85% in 400～740nm wavelength region may.
2. light-emitting device, it is characterized in that, the resin substrate that comprises thermal conductivity with 1.0～9.0W/mK, be located at the insulating barrier of the white on the resin substrate, be located at the circuit layout layer on the insulating barrier, be located at the reflector on insulating barrier and the circuit layout layer, the light-emitting component that central area in the incorporating section of reflector is located on the insulating barrier and is conducted with the circuit layout layer of the peripheral edge margin that is positioned at the incorporating section, described reflector has corresponding to the light-emitting component allocation position be provided with the incorporating section of opening and the structure that the circuit layout layer is positioned at the peripheral edge margin of incorporating section on insulating barrier and circuit layout layer, and the reflectivity of aforementioned dielectric laminar surface is more than 85% in 400～740nm wavelength region may.
3. light-emitting device as claimed in claim 2 is characterized in that, has the surface area ratio relation bigger than the surface area ratio of aforementioned circuit patterned layers in the face of the aforementioned dielectric layer in the aforementioned incorporating section.
4. as each described light-emitting device in the claim 1～3, it is characterized in that, contain the inorganic filler of 50～90 quality % in the synthetic resin system base material of aforementioned resin substrate.
5. light-emitting device as claimed in claim 4 is characterized in that, aforementioned inorganic filler is the following almost sphericals of diameter 100 μ m.
CNB2007100896847A 2006-03-28 2007-03-27 Light emitting device Expired - Fee Related CN100505348C (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2006089131 2006-03-28
JP2006089131 2006-03-28

Publications (2)

Publication Number Publication Date
CN101047222A CN101047222A (en) 2007-10-03
CN100505348C true CN100505348C (en) 2009-06-24

Family

ID=38771601

Family Applications (1)

Application Number Title Priority Date Filing Date
CNB2007100896847A Expired - Fee Related CN100505348C (en) 2006-03-28 2007-03-27 Light emitting device

Country Status (1)

Country Link
CN (1) CN100505348C (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011091126A (en) * 2009-10-21 2011-05-06 Shin-Etsu Astech Co Ltd Light emitting device (cob module)
EP2448028B1 (en) 2010-10-29 2017-05-31 Nichia Corporation Light emitting apparatus and production method thereof
CN103256514A (en) * 2013-05-21 2013-08-21 上海鼎晖科技有限公司 Linear LED light source

Also Published As

Publication number Publication date
CN101047222A (en) 2007-10-03

Similar Documents

Publication Publication Date Title
CN103199178B (en) Semiconductor light-emitting apparatus and the manufacture method of semiconductor light-emitting apparatus
CN100565951C (en) Luminescent device and manufacture method thereof
JP4747726B2 (en) Light emitting device
US8890297B2 (en) Light emitting device package
US9347646B2 (en) Light emitting device providing controlled color rendition
KR20160006695A (en) Circuit board, optical semiconductor device, and producing method thereof
CN100539224C (en) Light-emitting device
JP2007329219A (en) Resin forming body, surface mount light-emitting device, and method of manufacturing these
EP2297278A1 (en) Semiconductor light emitting apparatus and light source apparatus using the same
JP2008166535A (en) Surface-mounting side light emitting device and its manufacturing method
JP4815843B2 (en) Light emitting device
CN102315372A (en) Light-emitting module and illumination device
CN102194807A (en) Light-emitting diode packaging structure and manufacturing method thereof
CN101847626B (en) Light-emitting device
US20210184086A1 (en) Light-emitting device and method of manufacturing the same
JP2007258620A (en) Light emitting device
US7884378B1 (en) Light emitting diode package structure and lead frame structure thereof
KR100731678B1 (en) Chip-type led package and light emitting apparatus having the same
CN102194964A (en) Compound semi-conductor packaging structure and manufacturing method thereof
CN102437267A (en) Light-emitting chip packaging structure of metal substrate
CN100505348C (en) Light emitting device
KR20090073600A (en) Heat radiation type led package
JP5294741B2 (en) RESIN MOLDED BODY, SURFACE MOUNTED LIGHT EMITTING DEVICE AND METHOD FOR PRODUCING THEM
JP2013138262A (en) Resin mold, surface mounting type light emitting device, and manufacturing methods of resin mold and surface mounting type light emitting device
US11355678B2 (en) Light-emitting device and method of manufacturing the same

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
C17 Cessation of patent right
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20090624

Termination date: 20130327