CN100504326C - Inserting electrode lead-out method for micro platinum thermal resistance temperature sensor - Google Patents
Inserting electrode lead-out method for micro platinum thermal resistance temperature sensor Download PDFInfo
- Publication number
- CN100504326C CN100504326C CNB2007100718835A CN200710071883A CN100504326C CN 100504326 C CN100504326 C CN 100504326C CN B2007100718835 A CNB2007100718835 A CN B2007100718835A CN 200710071883 A CN200710071883 A CN 200710071883A CN 100504326 C CN100504326 C CN 100504326C
- Authority
- CN
- China
- Prior art keywords
- electrode
- substrate
- temperature sensor
- micro
- resistance temperature
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Images
Landscapes
- Physical Vapour Deposition (AREA)
Abstract
A method leads out electrode of micro-platinum thermo-resistance temperature sensor. In order to meet requirement of ultrathin body, its steps are: (1) Wash Al2O3 base plate<1>. (2) Laser notch: use laser to process <1> and open two electrode grooves <2> at 1/3 of its one end. (3) Electrode<3> embedment: embed <3> into <2> and fill slack between them with high-temperature conductive agglomerant. Heat treat the agglomerant under 700-900deg.C for 1h to fix <3> in <2>. (4) Sputter platinum film <4>. (5) Plate-making and resistance adjusting. In this invention, sensitive film surface smooth without tubercle, wiped joint of electrode can not add sensor thickness, which can realize detecting temperature information of micro-parts including slit, slip and micro-space etc. The invention realizes microminiaturization and ultrathin of platinum thermo-resistance temperature sensor. It has merits of simple technology and strong operation.
Description
Technical field
The present invention relates to a kind of electrode lead-out method.
Background technology
The measurement range of platinum resistance sensor can be from-250～640 ℃, and performance is the most stable in metal fever resistance temperature sensor, and for platinum resistance sensor, substrate is thick more, and the thermal capacity of sensor is big more, and the response time is also just slow more.And, the privileged sites in fields such as modern industry, weaponry (as, between slit, fillet, microvoid etc.) need to detect small local temperature information, and require response to be exceedingly fast.Therefore, miniature ultra-thin temperature sensor is badly in need of in engineering.
It is at Al that the electrode of traditional platinum resistance sensor is drawn
2O
3Realize the electrode welding by the high-temperature agglomerant sintering on the surface of Pt film on the pottery, must have and the close solder joint of substrate thickness (about 0.55mm) at the pad place, the thickness of whole sensor is reached more than the 1.1mm, response time, also more than 30s, this kind electrode lead-out method can't satisfy the requirement of ultra-thin body.
Summary of the invention
In order to satisfy the requirement of ultra-thin body, and a kind of inserting electrode lead-out method of micro platinum thermal resistance temperature sensor is proposed.
Step of the present invention is as follows:
Step 1: clean Al
2O
3Substrate 1;
Step 2: laser grooving: adopt laser instrument with 1062nm wavelength laser, 1～20khz pulsed frequency processing Al
2O
3Substrate 1 is at Al
2O
3About 1/3 place of one end of substrate 1 leaves two electrode trenches 2, and machining precision is controlled in the 20 μ m;
Step 3: electrode 3 is imbedded: in electrode 3 embedded electrode grooves 2, fill and lead up space between electrode 3 and the electrode trenches 2 with the high-temperature electric conduction cementing agent again, thermal treatment 1h sintering high temperature conductive adhesive is fixed on electrode 3 in the electrode trenches 2 under 700～900 ℃ of temperature;
Step 4: sputter platinum film 4;
Step 5: plate-making resistance trimming.
The present invention is applicable to the thick film Al that makes with traditional ceramics technology
2O
3Substrate and electrochemical oriented growth ultrathin membrane Al
2O
3The electrode of substrate is drawn processing, makes sensitive film surface smooth, no thrust, and the electrode pad does not increase sensor thickness in addition, realizes between slit, fillet, microvoid etc. detecting the purpose of small local temperature information.The present invention has realized miniature, ultra-thinization of platinum resistance sensor, has characteristics such as technology is simple, workable.
Description of drawings
Fig. 1 is a FB(flow block) of the present invention; Fig. 2 is a schematic flow sheet of the present invention; Fig. 3 is an embedded electrode micro platinum thermal resistance temperature sensor structural representation.
Embodiment
Embodiment one: in conjunction with Fig. 1 and Fig. 2 present embodiment is described, the step of present embodiment is as follows:
Step 1: clean Al
2O
3Substrate 1;
Step 2: laser grooving: adopt laser instrument processing Al
2O
3Substrate 1 is at Al
2O
3About 1/3 place of one end of substrate 1 leaves two electrode trenches 2;
Step 3: electrode 3 is imbedded: in electrode 3 embedded electrode grooves 2, fill and lead up space between electrode 3 and the electrode trenches 2 with the high-temperature electric conduction cementing agent again, thermal treatment 1h sintering high temperature conductive adhesive is fixed on electrode 3 in the electrode trenches 2 under 700～900 ℃ of temperature;
Step 4: sputter platinum film 4;
Step 5: plate-making resistance trimming.
Embodiment two: present embodiment and embodiment one difference are that the high-temperature electric conduction cementing agent is the intermixture in 1:5～1:10 ratio of frit and platinum slurry; Other composition is identical with embodiment one with connected mode.
Embodiment three: present embodiment is described in conjunction with Fig. 3, present embodiment and embodiment one difference are that the thickness of embedded electrode micro platinum thermal resistance temperature sensor integral body is at 0.15～0.65mm, reduce the thickness of sensor integral body, reached ultra-thin requirement; Other composition is identical with embodiment one with connected mode.
Embodiment four: in conjunction with Fig. 1 and Fig. 2 present embodiment is described, present embodiment and embodiment one difference are that step is as follows:
Step 1: clean Al
2O
3Substrate 1: at first boil 10～20min, flush away Al with deionized water
2O
3Solubility pollutant on the substrate 1; Secondly under the 30khz frequency, carry out ultrasonic cleaning 10～20min, flush away Al with acetone
2O
3Organic contaminant on the substrate 1; Under the 30khz frequency, carry out ultrasonic cleaning 10～20min, flush away Al with alcohol then
2O
3Organic contaminant on the substrate 1; Carry out ultrasonic cleaning 10～20min with deionized water under the 30khz frequency afterwards, flush away remains in Al
2O
3Acetone on the substrate 1 and alcohol; Dry at last or dry Al
2O
3Substrate 1;
Step 2: laser grooving: adopt the YAG laser instrument with 1062nm wavelength laser, 1～20khz pulsed frequency processing Al
2O
3Substrate 1 is at Al
2O
3About 1/3 place of one end of substrate 1 leaves two electrode trenches 2, and machining precision is controlled in the 20 μ m; According to electrode 3 sizes and Al
2O
3Substrate 1 thickness is adjusted laser processing parameter by change and just can be processed the electrode trenches 2 that is fit to embedded electrode 3;
Step 3: electrode 3 is imbedded;
Step 4: sputter platinum film 4: remove vacuum chamber interior dirt, attachment and sediment with dipping in spirituous gauze wiping before the plated film;
1. bleed: Al
2O
3Substrate 1 is put into the Sample Room of many targets of JGP560C type ultrahigh vacuum sputter coating machine, shut door for vacuum chamber, open mechanical pump, vacuum chamber is slightly taken out, when treating that vacuum tightness reaches 10Pa, opened molecular pump, carefully take out, open the mechanical pump and the molecular pump of sputtering chamber simultaneously, when treating vacuum tightness, the baffle plate in the middle of two chambers is shut less than 0.1Pa;
2. backwash cleans Al
2O
3Substrate 1: with Al
2O
3Substrate 1 is as target, allows argon ion bombardment Al
2O
3Substrate 1 is to remove Al
2O
3The dust on substrate 1 surface and the gas of absorption etc., and make Al
2O
3There is very high activity on substrate 1 surface, is beneficial to platinum film 4 and Al
2O
3The combination of substrate 1; Treat that Sample Room vacuum tightness reaches 3 * 10
-4During Pa, feed argon gas, the flow of argon gas is about 20, and the bleeding regulating valve reaches about required pressure 3Pa Sample Room, under the power of 80w sample is carried out backwash with the method for rf magnetron sputtering and cleans 20min at least; Because Al
2O
3The cleanliness on substrate 1 surface can be directly connected to the performance of the combination interface between film and substrate, also can influence the homogeneity of plated film simultaneously.In order to improve the cleanliness of substrate surface, backwash to clean Al
2O
3Substrate 1;
3. baking: the vacuum tightness at vacuum chamber reaches 5 * 10
-5During Pa, at high temperature toast vacuum chamber, the gas of absorption be extracted out as far as possible and gone.Baking temperature is selected 150 ℃, toasts two hours;
4. plated film: the baffle plate in the middle of two Room is opened the Al that backwash in the Sample Room is cleaned
2O
3Substrate 1 is sent to sputtering chamber by transmitting bar, closes overhead gage; The vacuum tightness for the treatment of sputtering chamber reaches 2 * 10
-5During Pa, feed argon gas, argon flow amount is about 22, same bleeding regulating valve reaches about required pressure 3Pa the operating room, adopt the method for magnetically controlled DC sputtering, keeping under the constant situation of vacuum tightness and argon pressure, carry out plated film by changing sputtering power and sputtering time, plated film adopts the platinum target, purity is 99.95%, the size Φ 60 * 2.5mm of target, target densification, surfacing is bright and clean, defectives such as inner nothing is loose, shrinkage cavity;
5. closing machine: after plated film finishes, turn off gas, shielding power supply, turn off molecular pump and mechanical pump;
6. inflate pickup: baffle plate is opened, in vacuum chamber, inflated, take out Al
2O
3Substrate 1;
The wall of vacuum chamber and other part in the vacuum chamber may contain adsorbed gas, aqueous vapor and carbon dioxide, and owing to the bombardment effect of electronics in the aura and ion, these gases may disengage again; Therefore, all surfaces that may contact aura all must suitably be cooled off in deposition process, so that make it reach thermal equilibrium in the first few minutes of deposit, so in the process that vacuumizes, chilled water is circulating in the vacuum chamber always;
Step 5: plate-making resistance trimming: adopt the YAG laser instrument with the laser resistor trimming instrument of 531nm wavelength laser, 1～20khz pulsed frequency Al at the good platinum film 4 of sputter
2O
3The resistance trimming of making a plate on the substrate 1, machining precision is controlled in the 20 μ m; Other composition is identical with embodiment one with connected mode.
Claims (4)
1, the inserting electrode lead-out method of micro platinum thermal resistance temperature sensor is characterized in that the inserting electrode lead-out method step of micro platinum thermal resistance temperature sensor is as follows:
Step 1: clean Al
2O
3Substrate (1);
Step 2: laser grooving: adopt laser instrument with 1062nm wavelength laser, 1～20khz pulsed frequency processing Al
2O
3Substrate (1) is at Al
2O
3About 1/3 place of one end of substrate (1) leaves two electrode trenches (2), and machining precision is controlled in the 20 μ m;
Step 3: electrode (3) is imbedded: in electrode (3) embedded electrode groove (2), fill and lead up space between electrode (3) and the electrode trenches (2) with the high-temperature electric conduction cementing agent again, thermal treatment 1h sintering high temperature conductive adhesive under 700～900 ℃ of temperature is fixed on electrode (3) in the electrode trenches (2);
Step 4: sputter platinum film (4);
Step 5: plate-making resistance trimming.
2, the inserting electrode lead-out method of micro platinum thermal resistance temperature sensor according to claim 1, the thickness that it is characterized in that micro platinum thermal resistance temperature sensor integral body is at 0.15～0.65mm.
3, the inserting electrode lead-out method of micro platinum thermal resistance temperature sensor according to claim 1 is characterized in that at first boiling 10～20min with deionized water in the step 1 flush away Al
2O
3Solubility pollutant on the substrate (1); Secondly under the 30khz frequency, carry out ultrasonic cleaning 10～20min, flush away Al with acetone
2O
3Organic contaminant on the substrate (1); Under the 30khz frequency, carry out ultrasonic cleaning 10～20min, flush away Al with alcohol then
2O
3Organic contaminant on the substrate (1); Carry out ultrasonic cleaning 10～20min with deionized water under the 30khz frequency afterwards, flush away remains in Al
2O
3Acetone and alcohol on the substrate (1); Dry at last or dry Al
2O
3Substrate (1).
4, the inserting electrode lead-out method of micro platinum thermal resistance temperature sensor according to claim 1 is characterized in that in the step 5 adopting laser instrument with the laser resistor trimming instrument of 531nm wavelength laser, the 1～20khz pulsed frequency Al at the good platinum film of sputter (4)
2O
3The resistance trimming of making a plate on the substrate (1), machining precision is controlled in the 20 μ m.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2007100718835A CN100504326C (en) | 2007-03-14 | 2007-03-14 | Inserting electrode lead-out method for micro platinum thermal resistance temperature sensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2007100718835A CN100504326C (en) | 2007-03-14 | 2007-03-14 | Inserting electrode lead-out method for micro platinum thermal resistance temperature sensor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101021442A CN101021442A (en) | 2007-08-22 |
| CN100504326C true CN100504326C (en) | 2009-06-24 |
Family
ID=38709276
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB2007100718835A Expired - Fee Related CN100504326C (en) | 2007-03-14 | 2007-03-14 | Inserting electrode lead-out method for micro platinum thermal resistance temperature sensor |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN100504326C (en) |
Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102607732B (en) * | 2012-03-20 | 2013-08-28 | 哈尔滨工程大学 | Preparation method of film temperature sensor for liquid floated gyroscope |
| CN103876737B (en) * | 2014-04-08 | 2016-03-02 | 青岛柏恩鸿泰电子科技有限公司 | Based on dry type soft electrode and the preparation technology thereof of magnetically controlled DC sputtering technology |
| CN104374886B (en) * | 2014-12-17 | 2016-08-17 | 哈尔滨理工大学 | One oozes B quasiconductor heating humiture self compensation gas integrated sensor |
| CN106556474A (en) * | 2016-11-23 | 2017-04-05 | 合肥舒实工贸有限公司 | Thermistor temperature sensor |
| CN106644144A (en) * | 2016-11-23 | 2017-05-10 | 合肥舒实工贸有限公司 | Thermistor-included temperature sensor |
| CN106370318A (en) * | 2016-11-23 | 2017-02-01 | 合肥舒实工贸有限公司 | Thermistor temperature sensor |
| CN106556473A (en) * | 2016-11-23 | 2017-04-05 | 合肥舒实工贸有限公司 | Thermistor temperature sensor |
| CN107681178A (en) * | 2017-08-24 | 2018-02-09 | 上海交通大学 | The detecting system of detection fuel cell pile internal temperature field change and preparation in real time |
| EP3765827A1 (en) * | 2018-03-15 | 2021-01-20 | Heraeus Nexensos GmbH | Temperature sensor element |
| CN110631728B (en) * | 2019-06-26 | 2020-11-10 | 兴勤（宜昌）电子有限公司 | Automatic welding and packaging equipment for glass packaging temperature sensor |
| CN114459624B (en) * | 2022-01-24 | 2023-05-16 | 清华大学 | Built-in film thermocouple and preparation method thereof |
-
2007
- 2007-03-14 CN CNB2007100718835A patent/CN100504326C/en not_active Expired - Fee Related
Non-Patent Citations (4)
| Title |
|---|
| 厚膜铂电阻浆料的研制. 夏之宁，陶文全.电子元件与材料，第8卷第4期. 1989 |
| 厚膜铂电阻浆料的研制. 夏之宁，陶文全.电子元件与材料，第8卷第4期. 1989 * |
| 激光微细熔覆直写技术制作厚膜温度传感器的初步研究. 戴智刚.中国学术期刊（光盘版）电子杂志社，第5期. 2006 |
| 激光微细熔覆直写技术制作厚膜温度传感器的初步研究. 戴智刚.中国学术期刊（光盘版）电子杂志社，第5期. 2006 * |
Also Published As
| Publication number | Publication date |
|---|---|
| CN101021442A (en) | 2007-08-22 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN100504326C (en) | Inserting electrode lead-out method for micro platinum thermal resistance temperature sensor | |
| US7948735B2 (en) | Electrostatic chuck and method for manufacturing the same | |
| KR20110086851A (en) | Protective coatings resistant to reactive plasma processing | |
| JP2005210077A (en) | Electrostatic chuck and manufacturing method therefor, and alumina sintered member and manufacturing method therefor | |
| KR20060103142A (en) | Electrostatic chuck and method of manufacturing electrostatic chuck | |
| KR20110033860A (en) | Surface-treated ceramic member, method for producing same, and vacuum processing device | |
| CN104451580A (en) | Preparation method of RB-SiC (Reaction Bonded Silicon Carbide) substrate reflector surface modification layer | |
| Mercadelli et al. | Tape cast porosity-graded piezoelectric ceramics | |
| JP2007150050A (en) | Method of manufacturing printed wiring board | |
| Raether | Current state of in situ measuring methods for the control of firing processes | |
| CN100480418C (en) | Method of preparing ZrWzO8/ZrO2 film by radio frequency magnetic controlled sputtering | |
| JP5486345B2 (en) | Manufacturing method of ceramic sintered body | |
| JP2016524813A (en) | Electronic device and passivation method thereof | |
| US8225927B2 (en) | Method to substantially enhance shelf life of hygroscopic components and to improve nano-manufacturing process tool availablity | |
| JP5465143B2 (en) | Tool material for SiC firing | |
| JP3966201B2 (en) | Wafer holder for semiconductor manufacturing apparatus and semiconductor manufacturing apparatus equipped with the same | |
| JP5616252B2 (en) | Sputtering target and manufacturing method thereof | |
| JPH01312088A (en) | Production of electrode for dry etching device and cvd device | |
| CN110016648A (en) | It is a kind of to be dielectrically separated from coating production suitable for high-temperature piezoelectric sensor | |
| JP2006344999A (en) | Susceptor and its manufacturing method | |
| JP4795798B2 (en) | Ceramic member and manufacturing method thereof | |
| US6800328B2 (en) | Process for impregnating porous parts | |
| JP5225043B2 (en) | Electrostatic chuck | |
| JP6877219B2 (en) | Sensor element | |
| CN111089774A (en) | Surface corrosion treatment method of boron carbide product, metallographic sample and preparation method of metallographic sample |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| EE01 | Entry into force of recordation of patent licensing contract |
Assignee: Harbin Railway Bureau Industry Corporation, Qigihar power equipment factory Assignor: Harbin University of Science and Technology Contract fulfillment period: 2009.6.25 to 2015.6.25 contract change Contract record no.: 2009230000038 Denomination of invention: Inserting electrode lead-out method for micro platinum thermal resistance temperature sensor Granted publication date: 20090624 License type: Exclusive license Record date: 20091026 |
|
| LIC | Patent licence contract for exploitation submitted for record |
Free format text: EXCLUSIVE LICENSE; TIME LIMIT OF IMPLEMENTING CONTACT: 2009.6.25 TO 2015.6.25; CHANGE OF CONTRACT Name of requester: HARBIN RAILWAY BUREAU INDUSTRY CORPORATION QIQIHAR Effective date: 20091026 |
|
| C17 | Cessation of patent right | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20090624 Termination date: 20120314 |