CN100503265C - Mold, pattern forming method, and pattern forming apparatus - Google Patents
Mold, pattern forming method, and pattern forming apparatus Download PDFInfo
- Publication number
- CN100503265C CN100503265C CNB2006100917162A CN200610091716A CN100503265C CN 100503265 C CN100503265 C CN 100503265C CN B2006100917162 A CNB2006100917162 A CN B2006100917162A CN 200610091716 A CN200610091716 A CN 200610091716A CN 100503265 C CN100503265 C CN 100503265C
- Authority
- CN
- China
- Prior art keywords
- mould
- mark
- pattern
- substrate
- workpiece
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Images
Abstract
A pattern forming method for forming a pattern includes: preparing a mold 104 provided with a first surface including a pattern area 1000, a second surface located opposite from the first surface, and an alignment mark 2070 provided at a position at which the alignment mark 2070 is away from the second surface and is close to the first surface; contacting the pattern area 1000 of the mold 104 with the coating material disposed on a substrate 5000; obtaining information about positions of the mold 104 and the substrate 5000 by using the alignment mark 2070 and a mark 5300 provided to the substrate 5000 in a state in which the coating material is disposed on the substrate 5000 at a portion where the alignment mark 2070 and the substrate 5000 are opposite to each other; and effecting alignment of the substrate 5000 with the mold 104 with high accuracy on the basis of the information.
Description
Technical field
The present invention relates to form mould, pattern formation method and the pattern forming device that pattern is used.More specifically, the present invention relates to the technique of alignment of mould and substrate.
Background technology
In recent years, be used for the retrofit technology that the micro pattern structure on the mould is transferred on the parts as resin or metal is developed.This technology is called as millimicro impression or millimicro embossing, and is supposed to realize the resolution ratio of nano-scale, thereby it replaces as exposure sources such as steeper (stepper) or scanner as semiconductor fabrication techniques of future generation and receives much attention.In addition, according to this millimicro stamping technique, space structure can be formed on the wafer as a whole, although it changes to some extent based on wafer size.Like this, expectation is widely used in the millimicro stamping technique as Optical devices such as photonic crystal and as the production technical field of μ-TAS biochips such as (micro-analysis system, Micro Total Analysis System).
Being disclosed in Applied Physics wall bulletin (Appl.Phys.Lett.) the 67th volume 21 phase 3114-3116 pages or leaves (1995) by people such as Stephan Y.Chou will be based on the processed and applied of millimicro impression in the technical scheme of semiconductor production.More particularly, go up formation photo curable resin bed at workpiece or workpiece (being semiconductor wafer) here.Then, the mould that will have required imprinted pattern is pressed against on this resin, subsequently, utilizes light to shine under pressure and makes resin solidification.The result that the light-curable resin layer is cured is that imprinted pattern has been transferred on the workpiece.When the resin bed that utilize to solidify is implemented etching etc. as mask, can on semiconductor wafer, form pattern.
In this stamping technique, need in the pattern transfer process, accurately implement mould and aim at (position) of workpiece.
This aligning normally obtains implementing by such mode, that is, from the mould side align structures that is arranged at mould (below be also referred to as alignment mark) and the alignment mark that is arranged at as workpiece such as semi-simple body wafers are read.
Yet, under the resin that transfer printing is had the mould pattern placed situation between mould and the workpiece, following problems can appear.
More particularly, owing to make the resin contact be positioned at the alignment mark of mould side, thus cause can not clearly observing alignment mark sometimes.And, when the difference of the refractive index of mould and resin is not enough, the observability extreme difference of alignment mark.
Summary of the invention
The object of the present invention is to provide the mould that can be suitable for high precision alignment.
Another object of the present invention is to provide the pattern formation method of utilizing above-mentioned mould and be used to implement the pattern forming device that this pattern forms.
A kind of mould is provided according to an aspect of the present invention, has comprised:
First surface, described first surface has the zone of pattern to be transferred;
Second surface, described second surface is relative with first surface; And
Alignment mark, described alignment mark embeds in the mould so that do not expose on first surface and second surface.
A kind of mould is provided according to a further aspect in the invention, has comprised:
First surface, described first surface has the zone of pattern to be transferred;
Second surface, described second surface is relative with first surface; And
First mark, described first mark is arranged at the first surface place; And
Second mark, described second mark are used for aiming at, and described second mark is arranged on the position away from first surface.
A kind of pattern formation method is provided according to a further aspect in the invention, has been used to utilize the pattern that is arranged at mould to form imprinted pattern being arranged on the way cover material material of substrate, having comprised:
Preparation mould, described mould be provided with the first surface that comprises area of the pattern, with this first surface opposing second surface and alignment mark, described alignment mark is arranged on the position away from first surface;
The area of the pattern of mould is contacted with way cover material material on being arranged on substrate;
Under alignment mark and substrate part respect to one another will way cover material material be arranged on state on the substrate, obtain information about the position of mould and substrate by the mark that uses alignment mark and be located at substrate; And
Under the state that area of the pattern and way cover material material contact with each other, implement aiming at of substrate and mould based on described information (in-plane) direction in the face of area of the pattern.
A kind of pattern formation method is provided according to a further aspect in the invention, and the pattern that is used for being arranged at by utilization mould forms pattern on parts to be processed, comprising:
Prepare mould, described mould be provided with the first surface that comprises area of the pattern, with this first surface opposing second surface, second mark that is arranged on first mark on the first surface and is used to aim at, described second mark is arranged on the position of alignment mark away from first surface; And
Second mark by using mould and be located at parts to be processed to the 3rd mutatis mutandis mark, implement aiming at of mould and parts to be processed.
A kind of pattern formation method is provided according to a further aspect in the invention, and the pattern that is used for being arranged at by utilization mould forms pattern on parts to be processed, comprising:
Implement aiming at of mould and parts to be processed by utilizing primary importance information and second place information direction in the face of the area of the pattern of mould, described primary importance information is the information about the relative position relation between first mark and second mark, described first mark is arranged on the surface of mould that surface with the formation area of the pattern of mould is positioned at same horizontal plane, described second mark is away from the surface of described formation area of the pattern, and described second place information is about second mark and is arranged at the information of the relative position relation between the 3rd mark of parts to be processed.
According to a further aspect in the invention, provide the pattern forming device of any method that is used for carrying out above-mentioned pattern formation method, having comprised:
The mould retaining part, described mould retaining part is used to keep mould; And
Substrate supporting part, described substrate supporting partly are used for substrate is supported;
Wherein said mould retaining part and described substrate supporting partly are formed at the interior direction of face and move relative to each other.
According to a further aspect in the invention, provide a kind of pattern transfer equipment, having comprised:
Aligning guide, described aligning guide is used to implement aiming at of mould and parts to be processed, described aligning guide is constituted as by utilizing primary importance information and second place information to implement mould and parts to be processed aiming at along direction in the face of the area of the pattern of mould, described primary importance information is the information about the relative position relation between first mark and second mark, described first mark is arranged on the surface of mould that surface with the formation area of the pattern of mould is positioned at same horizontal plane, described second mark leaves the surface of described formation area of the pattern, and described second place information is about second mark and is arranged at the information of the relative position relation between the 3rd mark of parts to be processed.
In addition, the invention provides following mould, process equipment, processing method and mould production method.
More specifically, provide a kind of mould, described mould has finished surface, is formed with pattern on this finished surface, it is characterized in that, this mould is provided with align structures, and described align structures is from the some microns of finished surface indentation or some millimeters.
In another aspect of this invention, described mould with pattern is characterized in that, finished surface and and this finished surface facing surfaces between the zone be provided with align structures.
In another aspect of this invention, described mould with pattern is characterized in that, is being provided with align structures with the finished surface facing surfaces.
In addition, provide a kind of process equipment, mould has been pressed against on the workpiece will be formed on pattern transfer on the mould to workpiece the time, described process equipment can make mould along in-plane and the workpiece alignment parallel with the finished surface of mould.More particularly, described process equipment comprises and is used for implementing the mechanism of aiming under mould and the workpiece state of contact making.At this moment, described equipment also comprises the position deviation testing agency that is used for detection position deviation when mould contacts with workpiece and is used for the mechanism that detected value and predetermined value with position deviation compare.Described equipment also can comprise, when detecting position deviation by position deviation testing agency and have the predetermined value of being not less than, is used for mould from contact position towards mechanism that the finished surface of mould is removed.
According to the present invention, a kind of processing method also is provided, by mould being pressed against on the workpiece and the pattern transfer that will be formed at mould to the workpiece during, described processing method comprises step as described below.More particularly, described processing method is characterised in that, when carrying out described processing, implement mould along under the situation of aiming at of direction in the face parallel and workpiece with the finished surface of mould, carry out such step, that is, by utilizing aforesaid mould to implement aiming at of mould and workpiece.
More particularly, make under mould and the workpiece state of contact, implementing mould aiming at along direction in the face parallel and workpiece with the finished surface of mould by following step (1) and (2):
(1) detect step by the position deviation that makes mould and workpiece contact position deviation is detected, and the step that compares with detected value with predetermined value; And
When (2) in position deviation detects step, detecting position deviation and have the value of the predetermined value of being not less than, the step that mould is removed towards the finished surface of mould from contact position.
The present invention also provides a kind of method that is used to produce mould, and described mould has pattern to be transferred on its finished surface.
Described mould production method is characterised in that, comprises the steps at least one step in (3) to (6):
(3) step of align structures is set in mould, described align structures is positioned at the position of leaving some microns or some millimeters from the finished surface of mould,
(4) step of align structures is set in mould, described align structures the finished surface of mould and and this finished surface facing surfaces between the zone,
(5) step of align structures is set to mould, described align structures is positioned at the finished surface facing surfaces with mould, and
(6) step that align structures is set in same operation simultaneously and forms pattern at finished surface.At this moment, the mask layer that can preferably in identical plane, be provided for forming the mask layer of align structures and be used for forming pattern at finished surface.
The present invention also provides a kind of pressworking equipment, is used for any of mould or parts to be processed (being also referred to as processing component here) pressurizeed pattern transfer with the finished surface that will be formed at mould to processing component.
Described equipment is characterized in that the aligning guide that constitutes as follows.
More particularly, described aligning guide so constitutes, promptly, it detects first relative position and second relative position, and with these first and second relative positions mutually relatively to implement aiming at of mould and processing component, wherein, described first relative position is being arranged on the mark on the finished surface of mould and is being arranged between the mark of interior section away from the position of finished surface of mould, and described second relative position is being arranged between the mark and the mark that is provided with about processing component of position that interior section towards mould leaves finished surface.
Described aligning guide is characterized in that comprising the device of the measurement result that is used to store first relative position and is used to store the device of the measurement result of second relative position.Described aligning guide also comprises optical system, and this optical system is used for light from light source to a part of channeling conduct, and this part is being arranged on away from the mark of the position of the finished surface of mould and is being arranged between the mark on the finished surface of mould.Described optical system also be constructed to light to from light source to a part of channeling conduct, this part is between being arranged on away from the mark of the position of the finished surface of mould and the mark that is provided with respect to processing component.Described optical system can also be constructed to have with reference to alignment mark.
The present invention also provides a kind of pressure processing method, any in pushing mould or the processing component with the pattern transfer on the finished surface that will be formed on mould to processing component.
More particularly, described pressure processing method so constitutes, promptly, it detects first relative position and second relative position, and comprise these first and second relative positions mutually relatively with the step of aiming at of enforcement mould with processing component, wherein, described first relative position is being arranged on the mark on the finished surface of mould and is being arranged between the mark of position that interior section towards mould leaves finished surface, and described second relative position is being arranged between the mark and the mark that is provided with about processing component of position that interior section towards mould leaves finished surface.
Described alignment procedures can may further comprise the steps (1), (2) and (3):
(1) based on the mark that is arranged on away from the position of the finished surface of mould, measure and store first error, as be arranged on the level and the rotation error of the mark on the finished surface of mould,
(2) based on the mark that is arranged on away from the position of the finished surface of mould, measure and store second error, as the level and the rotation error of the mark that is provided with about processing component,
(3) flatly and mobile rotatably processing component, so that first sum of errors, second error step consistent with each other.
In addition, described alignment procedures also can comprise by utilization having the step of measuring first sum of errors, second error with reference to the optical system of alignment mark.
The present invention also provides a kind of mould, this mould is used for pressure processing, it is characterized in that, has second mark of inwardly separating with the horizontal level of the finished surface of mould, with be formed on lip-deep first mark that is in same horizontal plane with the finished surface of mould, on the finished surface of described mould, be formed with pattern.Second mark comprise the primary importance measurement markers and with the corresponding alignment mark of mark that is provided with about processing component, first mark comprises corresponding second measurement markers that has with first measurement markers.Second mark is arranged on the finished surface facing surfaces with mould, and can be by having or lacking that the transparent component that constitutes mould constitutes or be made of the difference of the density of transparent component.In addition, second mark also can constitute and be arranged in second transparent component, the finished surface facing surfaces of formation and mould, and composition is different with first transparent component of the finished surface that constitutes mould.In addition, by on the part that lacks the transparent component that constitutes mould, embedding second parts, can with the finished surface facing surfaces of mould on second mark is set, described second parts are different with the composition of above-mentioned transparent component.Second mark can further be made of such mark, and this mark is arranged on the finished surface facing surfaces with mould, and outstanding from the transparent component that constitutes mould on this facing surfaces.
The present invention also provides a kind of method that is used to make the mould that pressure processing uses, and wherein, the pattern that is formed on the finished surface of substrate is transferred on the resin bed, and this resin bed is arranged on the surface of the substrate that constitutes processing component.This processing method is characterised in that and comprises the steps (1) and (2):
(1) on inside position, forms the step of second mark away from the finished surface of substrate;
(2) after forming second mark, on the basis of second mark part, on finished surface, form the step of the processing graphic pattern and first mark, described finished surface is surperficial relative with the substrate that is formed with second mark.
The method that the present invention also provides another kind to be used to make the mould that pressure processing uses, wherein, the pattern that is formed on the finished surface of substrate is transferred on the resin bed, and this resin bed is arranged on the surface of the substrate that constitutes processing component.This processing method is characterised in that and comprises the steps (3) and (4):
(3) step of formation second mark and first mark, inwardly on the position away from the finished surface of substrate second mark is being set, after forming second mark, by laser from the outside irradiation short pulse on a surface of substrate, with the surperficial relative finished surface of the substrate that is formed with second mark on formation first mark.
(4) on the basis of second mark part, on finished surface, form the step of processing graphic pattern.
The mould that uses among the present invention is included in the mould that has area of the pattern on the surface, and this surface for example will be stamped the surface of impression (projection and depression) pattern.In some cases, at this mould also finger print plate.
Described processing component (parts to be processed or workpiece) is meant an object, will be on the part of this object the pattern of transfer printing mould, for example itself have the substrate of coating material or have the substrate of coating material thereon.Coating material on the substrate can form the continuous film or the discontinuous film of point-like membrane portions for example.Its details will be explained below.As substrate, can use flat tabular parts, for example silicon wafer or quartz wafer, but so long as can be used to realize parts of the present invention that the present invention is not limited thereto.
According to aforesaid structure, the present invention can provide a kind of mould, can apply the aligning of high-precision mould and processing component (workpiece) to this mould.The present invention also can provide a kind of and use the pattern formation method of this mould and be used to carry out pattern forming device and the pattern transfer equipment that pattern forms.
In conjunction with the drawings the preferred embodiments of the present invention are carried out following explanation, these and other purpose of the present invention, feature and advantage will be more obvious.
Description of drawings
Fig. 1, Fig. 2 A to 2D, Fig. 3 A to 3D are the schematic sectional views of representing mould of the present invention respectively.
Fig. 4 is the schematic diagram of example of the structure of the process equipment of expression in the embodiments of the invention.
Fig. 5 A and Fig. 5 B are the flow charts of representing the processing method in the embodiments of the invention respectively.
Fig. 6 is illustrated in the schematic diagram that the mechanism that relative position departs from takes place during the impression.
Fig. 7 A and Fig. 7 B are the schematic diagrames that is illustrated in the moulding process mechanism that mould and wafer are damaged.
Fig. 8 is illustrated in the schematic diagram that the mechanism of error component takes place in the moulding process in detection system.
Fig. 9 A to Fig. 9 E is the schematic diagram of the method for stamping in the expression embodiments of the invention.
Figure 10 is the schematic diagram of an example of the align structures that comprises periodic structure in the expression embodiments of the invention.
Figure 11 A and 11B are the schematic diagrames of an example of representing the align structures of periodic structure in the embodiments of the invention respectively.
Figure 12 A to Figure 12 H, Figure 13 A to Figure 13 I, Figure 14 A to Figure 14 E, Figure 15 A to Figure 15 E are the schematic diagrames of method of representing to be used to make the mould of embodiments of the invention respectively.
Figure 16 A and Figure 16 B are the schematic diagrames that example is set of representing align structures in the embodiments of the invention respectively.
Figure 17 A and Figure 17 B and Figure 18 A and Figure 18 B are view and the flow charts of representing the pattern formation method of embodiments of the invention respectively.
Figure 19 A to Figure 19 C and Figure 20 A to Figure 20 E are the views of representing the structure example of mould in the embodiments of the invention respectively.
Figure 21 A to Figure 21 G is the schematic diagram of the procedure of processing of the expression mould that is used to make embodiments of the invention, has wherein changed the front surface of mould and back of the body surface so that the preparation mould.
Figure 22 is the schematic diagram of the structure of the pressworking equipment in the expression embodiments of the invention.
Figure 23 A and Figure 23 B are the schematic diagrames of the structure of the expression optical system of using the reference marker in the pressworking equipment in the embodiments of the invention.
Figure 24 A to Figure 24 E is the schematic diagram of procedure of processing that is used to make mould of expression embodiments of the invention, wherein processes this mould from a side of mould.
Figure 25 is the schematic diagram of structure example of the equipment of expression embodiments of the invention.
The specific embodiment
(first embodiment: mould 1)
The mould of present embodiment is described with reference to Fig. 1.
With reference to Fig. 1, mould 1100 has first surface 1050, with first surface 1050 opposing second surface 1060, be formed on area of the pattern 1000 on the first surface 1050, embed in the mould 1100 so that be not exposed on the first surface 1050 and the mark that is used to aim at (alignment mark) 1070 on the second surface 1060.
The material that is used to constitute the material of mould 1100 and is used to constitute alignment mark 1070 differs from one another, and can make the refractive index difference between them like this.Under the situation of considering optically read alignment mark 1070, the difference of refractive index is preferably and for example is not less than 0.1.As long as the material of alignment mark 1070 can be guaranteed with the difference of the refractive index of mould 1100 and can carry out optically readly, then not limit this material especially.For example, alignment mark 1070 can be made of the hole, and this hole can be evacuated or be filled with the gas of air for example or nitrogen.
In the present embodiment, it is very important embedding alignment mark 1070 in the mould 1100.Exist by such structure, in carrying out moulding process, can avoid following problem, that is, less optically read this alignment mark owing to be inserted into resin bed between substrate and the mould.The residue of resin adhere on the alignment mark or mould and resin between the big inadequately situation of the difference of refractive index under such problem can take place.In area of the pattern 1000, on the first surface 1050 of mould 1100, be formed with imprinted pattern.Also can form this imprinted pattern on smooth first surface 1050, this imprinted pattern can be transferred on the substrate then by ledge is set.
Reading by single optical system under the situation of area of the pattern 1000 and alignment mark 1071, from being adjusted at the viewpoint of the focusing on area of the pattern 1000 and the alignment mark 1070 simultaneously, alignment mark 1070 preferably is set to than second surface 1060 more close first surfaces 1050.
Incidentally, shown in Fig. 2 C, alignment mark 1070 also can embed in the material 107 that is different from mould 1100 materials.
And, can be on the surface identical with first surface 1050 preparation alignment mark and cover alignment mark with protective layer so that it is not exposed to the outside of mould.Like this, the material of protective layer can be identical with the material of mould, but can select to have the refractive index materials different with formwork.By the way, alignment mark outwards exposed state be meant that alignment mark does not directly contact with resin between mould and substrate.
When using photo curable resin to impress, mould is made of the light transmissive substrate of for example quartz, Pyrex glass (pyrex) (registration mark), sapphire etc.Needn't also can utilize metal material or silicon as formwork by under the situation of mould transmission ray.
Below, the manufacture process of the mould of alignment mark is arranged with reference to the embedding shown in Figure 13 A to Figure 13 E and Figure 14 key diagram 1.
When resin being inserted between substrate and the mould, during the imprinted pattern of transfer printing mould, adhere on the alignment mark of mould in order to prevent resin, alignment mark (align structures) also can constitute in such a way.
For example, shown in Fig. 2 A to 2D, on the surface of the area of the pattern of mould, construct of the variation of this align structures about the optical signature of direction in the face.In these figure, 101 expression processing planes, 102 expression align structures surfaces, 103 expression distance A, 104 expression moulds, 105 expressions are used for the mould (first parts) of pattern, the mould (second parts) that 106 expressions are used to aim at, 107 expression light transmissive substrate.
Fig. 2 A is expressed as follows the embodiment of structure, and promptly align structures surface 102 is arranged at a certain distance A103 inwardly on the position away from finished surface 101.In this position, not contact float of resin body structure surface 102.Distance A can preferably be set to from several microns to several millimeters according to the microscopical depth of focus.
Fig. 2 B is expressed as follows the embodiment of structure, second parts 106 that are about to be formed with on it first parts 105 of the imprinted pattern that is used for transfer printing and are formed with align structures 102 on it apply each other, so that can easily obtain the structure of align structures away from imprinted pattern.
Fig. 2 C more specifically represents as mentioned above to embed the embodiment of the structure of align structures in the light transmissive substrate, Fig. 2 D is illustrated in the embodiment that forms the structure of align structures on the facing surfaces with finished surface.
According to inventor's of the present invention research, when the face side identical with finished surface shown in Fig. 2 A and 2B forms align structures, have been found that align structures can be preferably towards the apparent surface away from several microns to several millimeters of finished surfaces.
Usually, the resin on the substrate to be processed is applied with 1 μ m or littler thickness, but consider that the thickness by the resin of exerting pressure may increase, so resin is preferably away from several microns on the plane of finished surface or more.In addition, when the distance between finished surface and the align structures was excessive, mould can reduce about the precision of structural design, so this distance preferably is not more than several millimeters.At this, term " several microns " is meant for example 2-3 μ m, and term " several millimeters " is meant for example 2-3mm.Be positioned at align structures mould finished surface the apparent surface or be positioned under the situation of inside of mould component parts, described distance is not limited to these scopes.
Described align structures can constitute for example following shape, for example, and box-like, cross, bar shaped or as periodic structure, the perhaps combination of these shapes.
Then, be described in the embodiment of the manufacture method of the mould shown in Fig. 2 A-2D with reference to Figure 12-15.
A) manufacture method of the mould of Fig. 2 A (Figure 12)
(1) on the substrate 104 of mould, forms hard mask layer 1201 (Figure 12 A).
(2) after with hard mask layer 1201 etchings, on hard mask layer 1201, form mask layer 1204 (Figure 12 B).The composition that can for example pass through to use steeper and scanner exposure and realize mask layer 1204 with the electron beam irradiation.In Figure 12 B, 1202 expressions form the zone of align structures, and 1203 expressions form the zone of actual pattern.
(3) combination of the residual film by using hard mask layer 1201 or hard mask layer 1201 and mask layer 1204 etches into the required degree of depth (Figure 12 C) as mask with mould substrate 102.In this case, the required degree of depth is to be used to impress the desired degree of depth.After this step, under the situation that stays mask layer 1204, by it being removed as processing such as ashing.
(4) the surface-coated mask layer 1205 (Figure 12 D) of the mould in the zone except align structures zone 1202.
(5) use hard mask layer 1201 mould substrate 104 to be etched into the required degree of depth (Figure 12 E) as mask.In this case, desired depth is than the degree of depth of dark tens nanometers of spacing A103 between align structures surface 102 and finished surface 101 to several microns.
(6) pass through to use mask layer 1205 as mask etching hard mask layer 1201, and then mould substrate 104 is etched into continuously and a corresponding degree of depth of saw A103.Resulting etched surfaces has constituted align structures 102 (Figure 12 F).
(7) remove mask layer 1205 (Figure 12 G).
(8) remove hard mask layer 1201 (Figure 12 H).Yet, in this case, when hard mask layer 1201 is formed by light transmissive material, in this step, will it not remove.
B) manufacture method of the mould of Fig. 2 B (Figure 13)
(1) on mould substrate 106, in a film, forms light transmissive material 1301 (Figure 13 A).Described material 1301 can preferably be different from the material that is used for mould substrate 106, so that guarantee etched selectivity.For example, light transmissive material can be by SiN, TiO
2Or Al
2O3 constitutes, and mould substrate 106 can be by SiO2, and CaF2 or ITO (tin indium oxide) form.
(2) on the film 1301 of another light transmission material, the layer 105 of another light transmission material can be identical with the material that is used for mould substrate 106.
(3) on layer 105, by light transmission material such as SiN, TiO
2Or Al
2O3, metal material such as Cr, Wsi or Al, Si etc. form hard mask layer 1201; (Figure 13 C).
(4) after with hard mask layer 1201 etchings, on hard mask layer 1201, form mask layer 1204 (Figure 13 D).Can be for example by shine the composition of realizing mask layer 1204 with steeper or scanner exposure or with electron beam.Being used for the material of mask layer 1204 can be for example select from the erosion resistant of the routine that is used for photoetching, electric lithography etc.In Figure 13 B, 1202 expression align structures zones, and 1203 expression actual pattern zones.
(5) combination of the residual film by using hard mask layer 1201 or hard mask layer 1201 and mask layer 1204 etches into the required degree of depth (Figure 13 E) as mask with the layer 105 of light transmission material.In this case, the required degree of depth is to be used to impress the desired degree of depth.After this step, under the situation that stays mask layer 1204, by removing this mask layer as processing such as ashing.
(6) apply mold surface in zone, align structures zone 1202 with mask layer 1205, and by using hard mask layer 1201 layer 105 of light transmitting material to be etched to the degree of depth (Figure 13 F) on layers 1301 the surface that arrives light-transmitting layer as mask.The material that is used for mask layer 1205 is selected from the erosion resistant of the routine that is similar to above-mentioned steps (4).
(7) will be by a part and hard mask layer 1201 etchings of etch exposed at the light transmitting material layer 1301 of layer 105 bottom.These etching processes of carrying out that can be independent, but also can in common step, carry out simultaneously in some cases.After this, when using mask layer 1205, layer 105 is etched to the degree of depth (13G) on the surface of the layer 1301 that arrives light transmission material as mask.
(8) mask layer 1205 is removed (Figure 13 H).
(9) exposed surface 1301 and hard mask layer 1201 are removed (Figure 13 I).But when mask layer 1201 is made of light transmitting material, will it not remove.Spacing A103 between align structures surface 102 and finished surface 101 is determined by the thickness of layer 105.As mentioned above, realized having the mould that is arranged on inwardly away from the locational alignment mark 102 of area of the pattern 101.
C) manufacture method (Figure 14) of the mould of the embedding alignment mark of Fig. 1 and 2
(1) similar with above method (B), carry out the step shown in Figure 13 A to 13E.
(2) with similar in the step shown in Figure 13 F, will be by layer 1301 etching (Figure 14 A) of etch exposed by using mask layer 1205 in the bottom of light transmission material layer 105 as mask.
(3), form light transmission material such as SiO by rotation coating, CVD etc. in whole mold surface
2, inorganic SOG (revolving oxygenerating silicon (Spin On Glass)) or the organic layer 107 of SOG.Form layer 107, so that fill the groove part 1212 that produces by etching in step (2).
(4) light transmitting material layer 107 is removed the surface that arrives the mould substrate surface, so that stay the part (Figure 14 C) that it is filled in described groove part 1212.The mould substrate surface is surface and mask layer 1205 the surface all the other zones in of hard mask layer 1201 in align structures zone 1202, but the former is preferential.The method that removes can for example be that whole surface is to after etching or CMP.
(5) mask layer 1205 is removed (Figure 14 D).Under light-transmitting layer 107 is still stayed situation on the mask layer 1205, it is removed by pulling away (lift-off) method.
(6) hard mask layer 1201 is removed (14E), but when the material that is used for hard mask layer 1201 is light transmission material, needn't require it is removed.Spacing A103 between align structures surface 102 and finished surface 101 is determined by the thickness of layer 105.But in this method, light transmitting material layer 1301 is embedded in the layer 106,105 and 107, thereby requires layer 1301 to be used in combination well with these layers 105-107 aspect optical contrast ratio, so that allow to observe align structures.
D) manufacture method of the mould of Fig. 2 D (Figure 15)
(1) on the surface of mould substrate 104, forms mask layer 1501 (Figure 15 A).This mask layer 1501 can form resist layer and hard mask layer, and has actual pattern zone 1203 and front/rear position alignment structural region 1502.Mask layer 1501 is for example by constituting pattern with exposures such as steeper, scanners or by shining with electron beam.
(2) by using mask layer 1501 that mould substrate 104 is etched into the required degree of depth (Figure 15 B).In the required degree of depth of this situation is the needed degree of depth of impression in actual pattern zone 1203.
(3) on front surface, form the protective layer 1503 of resist layer etc., and after this form mask layer 1504 (Figure 15 C) on back of the body surface.This mask layer 1504 has align structures zone 1202 and front/rear alignment area 1505, and front/rear alignment area 1505 is aimed at front/rear align structures zone 1502 optically, so that adjust the position relation between them.
(4) by using mask layer 1504 that form structure 104 is etched into the required degree of depth (15D).In this case, as long as align structures can guarantee that the optical contrast the required degree of depth can be any value.
(5) resist layer 1503, mask layer 1501 and mask layer 1504 are removed (Figure 15 E).When mask layer 1501 and 1504 is made of light transmitting material, needn't require to remove these layers.Spacing A103 between align structures surface 102 and finished surface 101 is determined by the thickness of mold surface 104.
As mentioned above, realized having the mould of first mark 1077 and second mark 1201, described first mark 1077 be formed on finished surface 101 on the identical surface of area of the pattern 1203, described second mark 1201 is used for aiming at the surperficial facing surfaces place that forms area of the pattern.This mould with two marks will more clearly be described in a second embodiment.
In the description of the method shown in the above mould manufacture method, particularly Figure 12-14, have such advantage, promptly can implement two different lip-deep patterns simultaneously and form.About having the example of step portion, be difficult to from the relation of the depth of focus, in an operation, obtain enough resolution ratio in two surfaces.On the other hand, implementing to have increased the error of aiming under the situation that pattern forms for twice, thereby can not guarantee relative distance between two patterns according to design.In the method shown in Figure 12-14, only require an operation, and can on two different surfaces, form pattern with same resolution ratio.
Second constructed embodiment in the present embodiment as mentioned above, but mould of the present invention is not limited to this.。
Other mould is also contained among the present invention, as long as they have the zone that do not contact mould from the finished surface to the resin align structures along the changes in optical properties of direction in the face, has the imprinted pattern that will be transferred on the workpiece at described finished surface.
Actually under the situation of implementing to aim at above-mentioned mould, described by using mould align structures and on the workpiece or the align structures that forms on the brace table of workpiece implement to aim at.
Can be applicable to various impression types by the above-mentioned mould of the present invention, as hot padding, heat reactive resin in hot padding, but can be particularly suitable for using the picture of light-curable resin to impress.
(second embodiment: mould 2)
The mould of present embodiment is characterised in that, comprise first surface with the area of the pattern that is used for transfer printing, with the first substrate opposing second surface, be arranged on first mark on first substrate and be arranged on towards locational second mark of second surface away from first surface.Second mark for example is at the mark 102 shown in Fig. 3 A and the 3B.
With reference to Fig. 3 A to 3D this mould is described more clearly.
In these figure, with Reference numeral identical among Fig. 2 A to 2D represent with in parts or part identical described in first embodiment.
For Fig. 3 A to 3D, first mark 1077 is arranged on the surface identical with the area of the pattern 101 with impression partial (not shown).First surface is the surface that forms area of the pattern 101, and second surface is and first surface facing surfaces 3101.
Second mark is arranged between first and second surfaces or on second surface.In Fig. 3 A and 3B, second mark is provided with on the inside position away from first surface.Second mark also can be embedded in the zone between first and second surfaces shown in Fig. 3 C or can be arranged on shown in Fig. 3 D on the first surface opposing second surface that forms with area of the pattern.
For example, the mould with second mark that is arranged on lip-deep first mark identical with area of the pattern and is used for aiming on the apparent surface of this mark can pass through the method manufacturing shown in Figure 15 A to 15E.At the mark 1077 shown in Figure 15 D are first marks.
In addition, as described in the present embodiment, has mould at lip-deep first mark identical and second mark on the apparent surface at this mould shown in Figure 20 A to 20E with area of the pattern.
By on two positions, alignment mark being set, though with other alignment mark situation of difficult under, also can aim at one of them alignment mark.
Especially, by first mark (at 1077 shown in Fig. 3 A-3D) being set on the surface identical with area of the pattern and, expecting to obtain following effect along on the position of thickness direction away from first mark of mould 104 second mark being set.More properly, according to area of the pattern 101 (1000 shown in Fig. 3 C), in some cases, it is differentiated being marked between design attitude and the actual fabrication position at the back of the body lip-deep second.When this difference in fact in moulding process when no problem, even when this difference occurs, also can use the described mould of first embodiment.Yet, must consider that this difference carries out under the situation of moulding process, the mould of present embodiment is very effective.This is because in the present embodiment, because can not form impression partial simultaneously on two surfaces of mould substrate, forms in second step that is marked at except the step that forms area of the pattern.On the other hand, first mark can prepare in the step identical with area of the pattern, thereby can be in close proximity to formation first mark on the position of design attitude.In the mould of present embodiment, can obtain the relative position relation between first mark and second mark, thereby can obtain about whether to have error ground to form the information of second mark about area of the pattern or first mark and design attitude.Incidentally, the material that is used for mould (template) can be and the described identical materials of first embodiment.
(the 3rd embodiment: pattern formation method 1)
The pattern formation method of present embodiment is carried out as follows.
At first, preparation mould, this mould be provided with the first surface that comprises area of the pattern, with the first surface opposing second surface be located at towards the locational alignment mark of second surface away from first surface.For example, this mould is shown among Fig. 1 to 3.
Then, the area of the pattern of mould and the coating material of substrate (for example photo curable resin or resist) are contacted with each other.
In Figure 17 A, 5000 expression substrates, 3000 expression coating materials, 104 expression moulds.In addition, the 1000 formed zones of indicating to be transferred on the coating material of imprinted pattern.The impression partial of the reality of imprinted pattern 1000 is not shown in the figure.Alignment mark 2070 is arranged on the position of the back side away from imprinted pattern 1000 of mould 104.The position of alignment mark 2070 is not limited to the position at the back side of mould in the present embodiment.Coating material 3000 be applied on the whole surface of substrate 5000 or the zone greater than the area of the pattern of mould on.As a result, mould 104 and substrate 5000 are placed to coating material 3000 are arranged on the part 5050 (broken circle) relative with alignment mark 2070 on the substrate 5000.In this state, obtain information (for example image information) by the mark that uses alignment mark and be located at side of substrate about the position of mould and substrate.
On the basis of this information, implement mould and aim at then with substrate (position) on the direction in the face of area of the pattern.More specifically, alignment mark 2070 and 5300 can be by single image pickup (sensing) device by optically read, to be implemented in the aligning of direction in the face.In the pattern formation method of present embodiment, can implement down to aim at the state (contact condition) that area of the pattern and coating material are in contact with one another.In the present invention, also can under contactless state, implement aiming at of mould and substrate.
Under the less situation of the difference of the refractive index between mould and the coating material, when the alignment mark of mould is positioned at area of the pattern 1000, because coating material may be less optically read with contacting of mould or can not optically read alignment mark.But in the pattern formation method of this enforcement, alignment mark 2070 and coating material 3000 (resin or the resist that for example comprise the material that can harden by for example ultraviolet irradiation of light) are not in contact with one another.Correspondingly, needn't strict control place the coating zone of the coating material between mould and the substrate, thereby also can prepare coating material by the rotation coating.Provide by the measure of adopting distributor coating material the point-like part diversity and reduce mould and substrate between distance, also can form coating material as continuous film at whole area of the pattern.
Coating material for example is photo curable resin and hardens when preferably can state aligning on the implementation.This is owing under the indirect state of contact, can cause position deviation via resin in some cases at mould and substrate.In other words, coated with resins can preferably be hardened under following state, promptly controls the gap between substrate and the mould in enforcement face in the Position Control of direction.By for example implementing the sclerosis of coating material with the ultraviolet irradiation coating material that comes from the mould side.The example of photo curable resin can comprise the resin of polyurethane type, epoxy type and acrylic-type.Also may use thermosetting resin for example phenolic resin, epoxy resin or organic siliconresin or thermoplastic resin for example polymethyl methacrylate (PMMA), Merlon (PC), PET or acrylate as coating material.In this case, form pattern by implementing heat treatment as required.Also can use dimethyl silicone polymer (PDMS) as coating material.
In the present embodiment, the following control of also preferred enforcement.
More specifically, on the basis of the information of above-mentioned acquisition, implement the control of the distance (gap) between substrate and the mould.
In some cases, when pressure is applied on the resin that places between mould and the substrate, can between mould and substrate, cause the position deviation on the direction in face.Especially, the position deviation in causing face on the direction surpasses under the situation of level of predetermined value, when in the distance that is keeping between mould and the substrate during correction position deviation, can worry that the area of the pattern of mould is by the possibility of physical damage.Therefore, in this case, the distance of implementing immediately between mould and the substrate is controlled to increase this distance.In a preferred embodiment, at mould in case escape to from substrate make between mould and the substrate via the d/d position of the mediate contact of resin on, just implement the aligning of mould and substrate.
As mentioned above, owing to apply power along the direction that is parallel to finished surface (forming the first surface of area of the pattern) to mould and workpiece in the pattern process of transfer printing mould, the position of mould and workpiece can be departed from each other.Correspondingly, can be preferably in the face of implementing to be parallel to finished surface down of exerting pressure the aligning of direction.
Incidentally, in the present embodiment, can use Semiconductor substrate for example Si substrate or GaAs substrate, the Semiconductor substrate of coated with resins, resiniferous substrate, glass substrate etc. as substrate.In addition, also may use the MULTILAYER SUBSTRATE for preparing by growth or laminated film on above-mentioned substrate.May make in addition and use for example quartz substrate of light transmissive substrate.These substrates be used in similarly among some embodiment and following embodiment in.
Will about the alignment mark of substrate setting can be directly about substrate itself or be laminated to the film setting on the substrate or be arranged on support unit indirectly or be used for the base of support substrate.In the present invention, the substrate that is provided with alignment mark comprises two kinds of situations, and promptly alignment mark is provided with about substrate itself that alignment mark is provided with about the film that is laminated on the substrate.
The example (flow chart) of the pattern formation method of present embodiment is shown among Figure 17 B.
With reference to figure 17B, at first, preparation is provided with the mould (P1) of alignment mark on the position away from area of the pattern.
The coating material (for example photo curable resin) that makes area of the pattern and be formed on the substrate is in contact with one another (P2).Can be preferably after implementing the aiming at of mould and substrate, carry out this operation.Incidentally, separate easily between mould and the substrate in order to make after hardening of resin in some cases, fluorine-containing silane couplent etc. is applied on the area of the pattern of mould as releasing agent in advance.Correspondingly, in the present invention, the situation of representing that not only they are in direct contact with one another that contacts of area of the pattern (or mould) and coating material represents that also they are via another layer (for example releasing agent layer) situation of mediate contact each other.This also is same for other embodiment.
Then, under the contact condition of the area of the pattern of mould and coating material, implement aim at (P3) of mould and substrate.During aiming at, also has coating material in the alignment mark in the face of mould on the direction and the alignment mark of substrate zone respect to one another (in Figure 17 A, being shown as 5300).Also can remove coating material, but from the severe control of the coated weight that relaxes the coating material on substrate and the angle of utilizing rotation to apply, even also preferably implement to aim at when in this zone, having coating material from this zone.
Implement in the following manner to aim at.
More specifically, in the face on the surface that forms area of the pattern, implement aiming at of mould and substrate on the direction, so that the area of the pattern of mould is positioned at the desired location on the substrate.Mould and substrate relatively move on the direction in face to implement aligning.
During the as above described in the present embodiment aligning, by utilizing about the mark of substrate setting and implementing the position adjustment of mould and substrate about the alignment mark 2070 of mould setting.Incidentally, make mould and substrate approaching each other, so that the gap between mould and the substrate (distance) is in desirable value as required.Between gap (position) adjustment period,, can be embodied in the face Position Control on the direction or be implemented in the position on the direction in the face in case adjust gap between mould and the substrate to provide after the required gap width.By alternately repeating the position adjustment of direction in gap adjustment and the face, also can be with the location arrangements of mould and substrate direction and the gap between them is arranged under the required state in face.
Incidentally, can implement clearance measurement between mould and the substrate by the ellipsometry of for example utilizing capacitance sensor or white light beam split.
Then, make coating material sclerosis (P4).For the hard-coating material, utilize for example ultraviolet ray of heat or light.Also may utilize the combination of light and heat to come the hard-coating material.
Then, remove mould (P5) from substrate.As a result, the pattern transfer of mould is to the coating material of sclerosis.Then, be arranged on the coating material of sclerosis as the imprinted pattern of mask by use and come film on etch substrate or the substrate.Preferably at the sunk part of the coating material layer of removing sclerosis so that implement etching after being exposed to the part of the substrate of coating material layer below just.
(the 4th embodiment: pattern formation method 2)
In the pattern formation method of present embodiment, used the mould that uses in a second embodiment.
Specifically, shown in Figure 18 A, by using second mark 2070 and implementing aiming at of mould 104 and substrate 5000 about the alignment mark (the 3rd mark) that substrate 5000 is provided with, described second mark 2070 is arranged on the position away from first surface 1050, forms area of the pattern 1000 at first surface 1050.In Figure 18 A, the back side (second surface) of the mould 104 that 1060 expressions are relative with first surface 1050.
In the present embodiment, read second mark 2070 and the 3rd mark 5030 by learning from the mould sidelight by means of image pickup device, and have preposition relation with second mark and the 3rd mark, thereby realize aiming at by relatively move along direction in the face mould and substrate.In this case, one or two in removable mould and the substrate.
In Figure 18 A, first mark 2077 is formed on the same surface of first surface.
In the present embodiment, obtain information in advance, can preferably realize aiming at of mould and substrate by using this information about the position between first mark 2077 and second mark 2070 relation.This is because the position relation that designs according to nanometer scale between second mark on the common surperficial facing surfaces that is difficult to guarantee area of the pattern 1000 and be arranged on and form area of the pattern.
More specifically, even be designed to be arranged on along direction in the face with on the position of distance S away from area of the pattern when second mark, in many cases, in fact second mark is arranged on on the position of distance S+ α (comprising error alpha) away from area of the pattern.On the other hand, can be guaranteed area of the pattern and be formed on as the position between lip-deep first mark of area of the pattern relation, thus first mark in fact be formed on the essentially identical position of the design attitude of nanometer scale on.For example forming by the electron beam image forming method in the step of image-region, when mark part forms by same method together, mark in fact can be formed on the very little position of design attitude error on.
According to present embodiment, alignment mark is arranged on two surfaces of mould, thereby can guarantee the position relation between the area of the pattern 1000 and second mark 2070.
With regard to the relation of the position between first mark and second mark, not only can directly determine but also can determine indirectly described position relation based on another mark X, and can utilize information about the position relation.In this case, the position of mark X can be preferably placed on any identical surface with first mark and second mark.
The pattern formation method of present embodiment also has following feature, promptly by using primary importance information and second place information to realize mark and processing component (or substrate) aiming at along direction in the face on area of the pattern surface, described primary importance information is about being arranged on lip-deep first mark of area of the pattern and being arranged on away from the relative position relation between locational second mark on the surface that forms area of the pattern, and described second place information is about being arranged on the relative position relation between the surface markers that is provided with away from locational second mark on the surface that forms area of the pattern with about processing component.
According to above-mentioned structure, can accurately detect the position of mould and workpiece, so that realize aiming at of mould and workpiece.This is because the accurate position probing that is realized, even also can not have a negative impact under light-curable resin and the situation that mark contacts by making at exert pressure down enforcement mould and substrate alignment, as the inventor's result of study, these are different with common pattern formation method.
Specifically, according to said structure, can realize aiming at being arranged on by relatively being arranged on the mark on the finished surface and being arranged on away from the relative position between the locational mark of finished surface away from the locational mark of finished surface with about the relative position between the mark of processing component setting.According to such structure, contact with light-cured resin with under the situation that reduces signal contrast even work as the mark that is arranged on the mould finished surface, also can be with the position of mould and the position alignment of substrate.
More particularly, mark on being arranged on mold surface and when being arranged on the plane that lip-deep mark away from described surface is projected the finished surface that is parallel to mould via parts concerns by the position between image pickup device or the described mark of similar device preliminary surveying.This is necessary measurement, because as mentioned above, easy formation in the error range of expectation in identical plane comprises the pattern of mark, and is difficult to guarantee to be arranged on the mark on the mold surface and is arranged on away from the position between the lip-deep mark of described mold surface concern.Under the situation that pre-determines described position relation, can omit above-mentioned measurement.
Next, be arranged on away from the locational mark of mold surface with about the relation of the position between the mark of substrate setting by image pickup device or similar device measurement.
By the measured value of more above-mentioned two kinds of positions relation, can accurately detect the position of mould and substrate.
According to above-mentioned measuring method, even when the mark on the finished surface contacts with light-curable resin, also can high precision ground with the pattern transfer of mould to substrate.
Above-mentioned pattern formation method can be applied in the semiconductor fabrication; Optical instrument is photonic crystal and biochip for example in the manufacturing technology of μ-TAS for example; Or the like.
According to an aspect of the present invention, mould is characterised in that, it has and is arranged on pattern and forms lip-deep first mark and be arranged on away from pattern and form second mark that the position (back side of image section or mould (opposite)) of the horizontal level on surface is located.As long as determine the relative position relation between described two marks, just do not limit the position of these marks.When the pattern of observing mould from the rear side of mould formed surface (front surface), promptly when observing this pattern from the direction that forms the surface perpendicular to pattern and form the surface, two patterns can be overlapped, but essential overlapping mutually.As long as first mark is positioned on the finished surface of mould, just do not limit this first mark especially.Yet from the angle of preparation mould, preferred first mark is arranged on the pattern of mould and forms on the identical horizontal level in surface (finished surface).
The 3rd mark that is provided with about processing component can be provided with about the substrate itself that constitutes processing component, or about being used for the supporting member setting of support substrate.
In the process that the position is adjusted, by utilize second mark and the 3rd mark measurement come between mould and the substrate position deviation and by controlling this position deviation preferably according to the relative position between first mark and second mark, thereby realize aiming at of mold surface and substrate to be processed.
Can preferably realize through the following steps aiming at, promptly, with storage as the step of first mark based on first control information of the level of second mark and rotation error, storage is as the step of the 3rd mark based on second control information of the level of second mark and rotation error, thereby and with respect to mark level and mobile rotatably substrate first control information and the corresponding to step of second control information.
In addition, preferably can realize aiming at by following method, promptly, storage is about at least one horizontal error between second mark and first mark or first control information of rotation error, storage is about at least one horizontal error between second mark and the 3rd mark or second control information of rotation error, and moves horizontally the operation of processing component and rotate at least one operation in the operation of mobile processing component with respect to mould by utilizing first sum of errors, second error to carry out with respect to mould.
In the present invention, three kinds of situations below the aligning of direction comprises at least in face between processing component (or substrate) and mould (or area of the pattern of mould).
More particularly, under the prerequisite that is parallel to each other between the area of the pattern of mould and the processing component, first kind of situation and second kind of situation are arranged.First kind of situation is that two parts are relative to moving horizontally or rotating to move and realize aiming at.Second kind of situation is that two parts are relative to moving horizontally and rotating to move and realize aiming at.At this, term " rotation is moved " means that for example the finished surface of mould rotates with respect to substrate around the axis perpendicular to this surface plane.In addition, under the prerequisite that is not parallel to each other between the area of the pattern of mould and the processing component, the third situation is arranged, wherein two parts rotate relatively, thereby their surface is near parastate.Comprise such situation in this " rotation relatively ", wherein the pattern of mould forms normal to a surface and perpendicular to the angle between the axis of this surface plane change has taken place.
Pattern according to present embodiment forms the example (flow chart) in zone shown in Figure 18 B.
At first, preparation has the mould (P11) of the first above-mentioned mark and second mark.
Next, make the coating material on area of the pattern and the substrate be in contact with one another (P22).In this example, has the substrate of described coating material corresponding to processing component.
Then, second mark by optically read substrate side and the 3rd mark are implemented aiming at of mould and substrate.In this case, by using information to realize aiming at (P33) about the position relation of first mark of mould and the 3rd mark.This information is by reading first mark by means of image pickup device and second mark obtains.As a result, even when not guaranteeing the position of second mark, also can utilize second mark of substrate side and the 3rd mark to implement high-precision aligning.The aligning that will in fact realize makes area of the pattern be adjusted to the desired location on the substrate, thereby aims at needing in some cases, so that obtain the position relation that do not overlapped mutually by second mark of optical observation and the 3rd mark.
After having finished mould and substrate alignment, make coating material solidify (P44).After this, remove mould (P55) from substrate.The result has finished pattern-forming.
Step P1, the P2, P4 and the P5 that describe among above-mentioned step P11, P22, P44 and P55 and the 3rd embodiment according to Figure 17 A are identical, thereby have omitted specific description.
Incidentally, be to omit step P44 under the situation of substrate itself when processing component, and by forming pattern at mould and undercoat plus-pressure.In this case, also can heat so that softening substrate substrate.In addition, when using substrate itself, in step P55, remove mould from substrate itself as processing component.
Elaborate step 33 below.
In the alignment procedures of step P33, coating material can be arranged on the substrate, so that the zone (shown in 5300 among Figure 17 A) have or do not have coating material, in this zone, be arranged on the mould side second mark and be arranged on the substrate the 3rd mark toward each other.
More particularly, along implementing aiming at of mould and substrate on the direction in the face on the surface that forms area of the pattern, thereby the area of the pattern of mould is positioned at the desired location on the substrate.Mould and substrate relatively move along direction in the face and aim at so that realize.
Noted earlier as present embodiment, in alignment procedures, by using about the 3rd mark of substrate setting and realizing the position adjustments of mould and substrate about second mark 2070 of mould setting.In the adjustment process of position, make the position deviation design attitude of second mark in some cases, implement to aim at so that concern according to the position between first mark and second mark.Incidentally, make mould and substrate close mutually, so that the gap between mould and the substrate (distance) is required value.In the adjustment process of gap (position), after in a single day the gap between mould and the substrate is adjusted to required value, can implements along the Position Control of direction in the face or realize position along direction in the face.By alternately repeating gap adjustment and, also can arrange the position of mould and substrate along direction in the face along the position adjustments of direction in the face, and with the gap adjustment between mould and the substrate to required value.
Incidentally, also can realize that this first mark is arranged on the surface of the formation area of the pattern of mould along the two stage aligning of the thickness direction of mould by using first mark and second mark, this second mark is provided with away from the surface that forms area of the pattern.For example be separated by each other when enough far away, utilize first mark to implement the adjusting of phase I when mould and substrate (or processing component).After this, make mould and substrate close gradually, and for example when first mark is not too visible, utilize second mark to implement the aligning of second stage.
[the 5th embodiment: pattern forming device]
Pattern forming device according to present embodiment is provided with mould maintaining part and substrate support (or processing component support portion), forms so that implement the pattern described in the embodiment 3 and 4.This mould maintaining part and substrate support are configured to relatively move along direction in the face.
In addition, the pattern forming device can preferably have: be used to detect the area of the pattern of the mould that is in contact condition therebetween and the position deviation testing agency of the position deviation between the coating material; And be used for according to gap (distance) controlling organization of controlling the gap between substrate and the mould from the detection information of testing agency.
The pattern forming device that is provided with mould according to of the present invention will be described below.
As shown in Figure 4, the pattern forming device comprises travel mechanism 205, mould pressing mechanism 206, light source 207, analytical system 208, image pickup device 209, microscope 210, the align structures 211 of mould side, align structures 212, mould 213, photo curable resin 214 and the workpiece 215 of workpiece side in light source 201, optical measuring system 202, impression control system 203, workpiece pressing mechanism 204, the face.
Among Fig. 4, shown a kind of like this example: alignment mark (align structures) 211 is located at position away from area of the pattern with respect to mould 213.But the example described in embodiment 1 or the embodiment 2 is also applicable to mould 213.
The feedback information about direction and Z-direction in the face of mould 213 and workpiece 215 that optical measuring system 202 records arrives impression control system 203.
In the present embodiment, can also use unshowned load cell or like to be used to measure to be applied to pressure on mould 213 and the workpiece 215.
Then will describe the processing method of using the process equipment with mould with reference to figure 5A and 5B in the present embodiment, Fig. 5 A and 5B show the flow chart of present embodiment respectively.
Among Fig. 5 A, step S1 is such step: in the so-called coarse adjustment stage, this step is used to implement the Z-direction and moves (1), move (1) by this Z-direction, mould is moved to desired location, so as with setpoint distance simultaneously with reference to the encoder of motor and Z-direction position detector near workpiece.This setpoint distance for example begins to contact the position of photo curable resin corresponding to mould.After mould was moved to desired location, operation proceeded to step S2, implements the plan-position and detect in this step S2.
Then, program proceeds to step S3-1.When comparing with setting value, detected value is in direction and satisfy condition (1) in the face, and operation proceeds to step S4, and this step S4 is used to carry out the Z-direction and moves (2) step as trickle mobile phase.In this step, displacement can be predetermined value or change according to the distance between mould and the workpiece.After finishing the step S4 of trickle mobile phase, during termination condition in satisfying step S5, EO.
Here, condition (1) can be configured to for example detected value whether less than several marks of the minimum feature (for example, tens nanometers) of pattern.Under the situation of (1) that do not satisfy condition, Rule of judgment (2) (step S3-2).Under the situation of (2) that satisfies condition, operation proceeds to step S3-3, carries out moving along direction in the face in this step S3-3.
Condition (2) can be configured to for example detected value whether in several marks and the scope less than minimum feature greater than minimum feature.Under the situation of (2) that do not satisfy condition, operation proceeds to step S3-4, implements the Z-direction and move the position of finishing after the Z-direction moves (1) so that mould is moved apart in this step S3-4.The position that is moved can be position, Z-direction that mould contacts photo curable resin move (1) before or during position or home position.After this, can change and be used for the distance parameter that the Z-direction moves (2).
Carry out aforesaid operations respectively, the termination condition in satisfying step S5.The value of this termination condition can be distance or pressure.
In addition, even under the situation that makes mould near the EO of workpiece, also to implement the position probing of mould and workpiece, and testing result is fed back to plane travel mechanism.
Fig. 5 B is the flow chart that is different from Fig. 5 A.
Similar with the step S1 of Fig. 5 A, be used for mould moved to desired location so that come coarse adjustment simultaneously with reference to the encoder of motor and Z-direction position detector with setpoint distance after, carrying out the plan-position that the Z-direction among the step S2 moves among (4) and the step S2-1 by parallel processing and detect near workpiece.Here, the Z-direction move (4) can by the distance or speed control.In addition, these control methods can change according to the distance between mould and workpiece.The Z-direction moves (4) carries out continuously, takes place up to satisfying termination condition (step S4) or interrupting (step S3-1).Condition＜＜3 that situation is divided in satisfying step S2-2〉〉 situation under interrupt taking place.As for the situation direction, condition＜＜1 for example〉be several marks less than minimum feature, condition＜＜2〉for being not less than condition＜＜1〉and less than minimum feature, condition＜＜3〉〉 for being not less than condition＜＜2 〉.
Satisfying condition＜＜1 situation under, the plan-position that operation turns back among the step S2-1 is detected.Satisfying condition＜＜2 situation under, move the plan-position that proceeds among the step S2-3 of operation, carries out the plan-position and move in this step S2-3, but interrupt not taking place.Satisfying condition＜＜3 situation under, operation proceeds to step S3-1, interrupt to take place in this step S3-1.
Interrupting under the situation about taking place, similar with step S3-4 among Fig. 5 A, implement the Z-direction and move (3) (step S3-2).
Carry out aforesaid operations, the termination condition in satisfying step S4.
As mentioned above, in a single day after making mould touch photo curable resin, when not satisfying the condition shown in Fig. 5 A (2), mainly move under the situation of the Z-direction position that keeps identical simultaneously along direction in the face position of mould, the possibility that exists mould and workpiece to suffer damage.For example, closer to each other (for example at mould and workpiece, in the scope of tens nanometers) situation under, according to the viscosity of photo curable resin, can produce big power (for example frictional force) along opposite directions in mold surface and surface of the work place along moving of direction in the face by mould.The pattern that this means mould and wafer is impaired.In impression, the pattern of mould and workpiece can be resisted power vertically as described later, but can be damaged by the power along direction in the face easily as mentioned above.
According to the structure of present embodiment, when at mould when detecting big position deviation after workpiece contacts, mould moves away workpiece along the Z-direction at once, moves along direction in the face then, to avoid above-mentioned damage.In addition, as implied above, align structures is located at the position away from area of the pattern, make align structures not can with photo curable resin state of contact in polluted by photo curable resin by adhering to of photo curable resin, thereby allow accurate position probing.
The damage of above-mentioned pattern along direction mould in the face and workpiece and align structures will more specifically be described by photo curable resin stain with contacting of photo curable resin below by mould.
Fig. 6 and Fig. 7 A and Fig. 7 B are the schematic diagram that is used for explaining these particular phenomenon of impression.
Among Fig. 6, mould 903 is provided with groove structure (A) 901 of broad and narrower groove structure (B) 902.Photo curable resin 904 is located on the workpiece 905.
As shown in Figure 6, under the patterned surfaces that the groove structure (A) 901 of broad and narrower groove structure (B) 902 constitute is formed on situation on the mould 903, when making mould 903 and workpiece 905 closer to each other, photo curable resin 904 at first is filled in the narrower groove structure (B) 902.As a result, be applied to groove structure (A) 901 of broad and the stress on the narrower groove structure (B) 902 and differ from one another, make and between mould 903 and workpiece 905, cause inclination, cause slip therebetween.The feasible occurrence positions deviation in some cases of result.The amount of position deviation is accumulation gradually along with the minimizing of distance between mould and the workpiece.In this case, direction in face moves when very big when mould and/or workpiece, and mould and workpiece may be damaged in some cases.Ginseng Fig. 7 A and the described phenomenon of 7B below this is attributable to.
In these figure, 1000 represent mould, the power that 1002 representatives vertically apply, and the power that 1003 representatives apply along direction in the face, 1004 represent torque, the axis during the 1005 representative fractures, and the starting point during the 1006 representative fractures.
In these figure, explain as an example with mould, but workpiece is suitable equally.
Shown in Fig. 7 A, under vertical pressing force was applied to situation on the mould, this power was applied to the whole surface of mould substantially equably.
On the other hand, shown in Fig. 7 B, be applied under the situation of mould in the power along direction in the face, the interface between pattern and the substrate does not receive uniform power.For example, about concentrating on the pulling force at edge part place, mould ruptures easily, simultaneously an edge as axis 1005 another edges as starting point 1006.When length-width ratio was big, this fracture was very remarkable, and reason is to follow bigger length-width ratio to have bigger rotating torques.
In this case, according to the processing method of present embodiment, when detecting big position deviation after contacting between mould and the workpiece, mould moves away workpiece along the Z direction earlier, moves along direction in the face as mentioned above then, can avoid above-mentioned damage.
In addition, as for aiming at of mould and workpiece, the align structures of mould side and the align structures of workpiece side are observed optically by optical measuring system 202, to implement the aligning of these align structures.
Fig. 8 is the schematic diagram that is used to explain the trouble state that produces between the align structures of mould 1103 and workpiece 1105.
Among Fig. 8,1101 representatives detect light, and 1102 represent scattering/refracted ray, and 1103 representatives have the mould of align structures, the photo curable resin of 1104 representatives, and 1105 representatives have the workpiece of align structures.
As shown in Figure 8, under photo curable resin 1104 was embedded in situation between mould 1103 and the workpiece 1105, when the distance between mould and the wafer reduced, the air spots of photo curable resin 1104 was smooth.Owing to this reason, detect light 1101 in scattering of the surface of photo curable resin 1104 or refraction (1102), make align structures unclear.In addition, at photo curable resin and under making with the very little situation of the difference of the refractive index between the mould of light transmission align structures, when mould contacts each other fully with photo curable resin, be difficult to detect align structures.In addition, under the situation that makes the mould contact workpiece with the detection position deviation,, when photo curable resin is attached on the align structures of mould, can hinder accurate aligning at photo curable resin solidification and before moving apart workpiece along the Z direction then.
In these situations, according to the present invention, the align structures of mould is located at these zones, and promptly it does not contact photo curable resin as described above, just can improve the accuracy of aligning.By the way, above-mentioned mould is suitable for align structures and the method for detecting position in the present embodiment, but can provide other moulds of essential detection resolution also to be fit to.
(the 6th embodiment: pattern transfer equipment)
Pattern transfer equipment according to present embodiment has aligning guide, be used to realize aiming at of mould and parts to be processed, this aligning guide is characterised in that it is configured to by utilizing primary importance information and second place information to make mould realize aiming at along direction in the face of mould area of the pattern with processing component (substrate), wherein primary importance information be about the surface that is arranged at and mould forms area of the pattern be in same level the mold surface place first mark with away from the relative position relation between second mark of the surface of formation area of the pattern, and second place information is about second mark and is set to relative position relation between the 3rd mark on the processing component.
More specifically, as the pattern transfer equipment of present embodiment, can utilize with reference to the identical equipment of figure 4 described equipment.
As the feature of present embodiment, realize actual aligning by using second mark and substrate side the 3rd mark.In this alignment procedures, under situation about having considered, realize aiming at about the primary importance information of the relative position relation between first mark and second mark.
As mentioned above, second mark is arranged at and has the position that error departs from the actual design position in some cases.Therefore, consider this error, can realize aiming at of second mark and the 3rd mark.In other words, can realize aiming at by first mark and the 3rd mark basically.
In the present embodiment, aligning guide can preferably include and be used to store first storage area of primary importance information and be used to store second storage area of second place information.
(embodiment 1)
Use has the mould of imprinted pattern so that make imprinted pattern by pressure is transferred on the processing component (parts to be processed) that is formed by resin by impression according to of the present invention.
Fig. 9 A to 9E is the explanatory view that is used to illustrate moulding process.
In these figure, 401 expression workpiece (substrate among the embodiment as mentioned above), 402 expressive notations, the photo curable resin of 403 expressions, 404 expression the 3rd align structures (the 3rd alignment mark), 405 expression second align structures (second alignment mark), the imprinted pattern of 406 expressive notations 402 and 407 expression light incident directions.
In the present embodiment, as the used material of mould 402, can make with light missile matter as quartzy, Pyrex glass (registration mark) or sapphire.The surface of mould 402 mainly is subjected to little processing by EB lithographic printing, FIB, X-ray lithography or the like, perhaps is subjected to duplicating shaping by what electroforming Ni or the like carried out.As workpiece 401, can mainly use wafer, resin plate, glass plate of the coating of semiconductor wafer such as silicon wafer or gallium arsenide wafer, resin or the like.
Below, will be described the processing of the impression in the present embodiment.
At first, photo curable resin 403 is coated on (Fig. 9 A) on the workpiece 401 that has the 3rd align structures 404.
Then, be disposed opposite to each other so that realize aim at (Fig. 9 B) of mould 402 and workpiece 401 being provided with the mould 402 of second align structures 405 and workpiece 401.More specifically, to realizing by for example square frame, cross, bar or Moire fringe and so on.By observing these shapes or striped and making them stand image processing, just can realize aiming at.The details of aiming at will be described afterwards.In Fig. 9 B, be arranged on position away from mold surface as second align structures 405 of second mark.Yet second mark also can be arranged at and make its not position of contact pressure resin, as described in reference to figure 2A-2D.In addition, in Fig. 9 B, resin 403 is not positioned at second mark and workpiece part respect to one another place, but can be positioned at this part place.
Then, reduce the distance between mould 402 and the workpiece 401, and mould 402 and workpiece 401 are remained in the position (Fig. 9 C) of guaranteeing setting pressure or setpoint distance.
Subsequently, utilize the formed structure of light 407 irradiation so that make photo curable resin 403 solidify (Fig. 9 D).
At last, mould 402 leaves workpiece 401 so that with the pattern transfer of mould 402 on the photo curable resin 403 on the workpiece (substrate) 401 or wherein (Fig. 9 E).
In the present embodiment shown in Fig. 9 A to 9E, the alignment mark of mould (second align structures 405) is formed at the position away from the area of the pattern surface.Yet, for instance,, also can the alignment mark that be positioned on mould 402 back sides be set for mould 402 as long as mould has the not this alignment mark of contact pressure resin 403.
The details of the align structures in the present embodiment will be narrated with reference to Figure 10, and Figure 10 shows a formation example that has periodic structure in the present embodiment.
In Figure 10, mould 505 has the height A 504 of finished surface 501, imprinted pattern 502, photomask 503 and imprinted pattern 502.
About aiming at of mould and workpiece, in the situation of alignment accuracy, can use square frame, cross, bar or the like greater than optical resolution.Under need situation, also can use high vision processing or periodic structure or these combination less than the accuracy of optical resolution.By the way, under the situation of periodic structure, as shown in Figure 10, periodic structure also can be set to comprise the imprinted pattern 502 of groove or be set to light blocking film 503 of chromium and so on.
Figure 11 A to 11B shows the example of the align structures of periodic structure.
In Figure 11 A, 601 expression workpiece side align structures (A), 602 expression mould side align structures, the pattern that 503 expressions have period p 1, the pattern that 604 expressions have period p 2.In this example, pattern 603 and 604 is set parallel to each other.
Mould with align structures (A) 601 is placed with the workpiece with align structures (B) 602 and makes these structures toward each other.
More specifically, workpiece side pattern 603 and label side pattern 604 overlap each other.In addition, workpiece side pattern 604 and label side pattern 603 overlap each other.Therefore, in overlapping two zones, in each, observe Moire fringe.In two zones, the cycle of two Moire fringes is mutually the same, and when their same phase times, the position of mould and workpiece is coupling just.In other words, just determined that the position between mould and the workpiece concerns.
Figure 11 B shows another formation example of the align structures in the present embodiment.
In Figure 11 B, 702 represent the uniaxial alignment structures and 702 expression X.Y. θ align structures.
For (θ), shown in the align structures among Figure 11 B 701, the align structures 601 shown in Figure 11 A is rotated by 90 degrees so that the align structures shown in Figure 11 B is set for X, Y by the aligning coefficient in the direction in the single align structures detection faces.The quantity of align structures can be one still needs two align structures to realize amplification corrections.In addition, in order to realize distortion correction, need at least one align structures in addition.
Figure 16 A and 16B show the example that is provided with of align structures.
In these figure, 801 expression moulds (A), 802 expression moulds (B), 803 expression patterns (A), 804 expression patterns (B), 805 represent the position that is provided with of align structures.
As shown in the mould (A) 801 of Figure 16 A, align structures is arranged at the place, four angles of pattern (A) 803, has therefore increased redundancy so that allow the improvement positional precision.In addition, as shown in the mould (B) 802 of Figure 16 B, align structures also can be arranged in the zone that is subjected to wafer cutting (dicing).
According to aforesaid present embodiment, can realize mould and workpiece aiming in the direction in face in high accuracy ground.
(embodiment 2)
In the present embodiment, with reference to figure 19A and 19C formation example according to mould of the present invention is described.
In these figure, structure comprises mould 19101, area of the pattern (machining area) 19102, primary importance measurement markers 19103, first alignment mark 19104 (second mark among second embodiment), second place measurement markers 19105 (first mark among second embodiment) and processing graphic pattern alignment mark 19106.
Figure 19 A is the explanatory view when structure from the area of the pattern opposing backside surface observation mould 19101 that is arranged at mould 19101 fronts the time.
Herein, the back side is not have the surface of processing graphic pattern in the area of the pattern 19102 and positive be formed at surface in the area of the pattern 19102 for processing graphic pattern.
In four of mould 1901 angle parts each place on the side overleaf, is placing primary importance measurement markers 19103, first alignment mark 19104 (second mark) and processing graphic pattern alignment mark 19106.
Second place measurement markers 19105 (first mark) is being placed at each place in four of mould 1901 angle parts on face side.
By the way, position measurement mark 19103 and 19105 is for being used to measure the marked back of mould and the mark of the relative position relation between the picture on surface.In addition, first alignment mark 19104 (second mark) is for being used to make the relative to each other mark of position alignment of mould and substrate.Processing graphic pattern alignment mark 19106 is the reference marker during the preparation of processing graphic pattern.
Figure 19 B is A-A ' cutaway view of Figure 19 A, and wherein second place measurement markers 19105 (first mark) is positioned over the front of mould and primary importance measurement markers 19103 is positioned over the back side of mould.
Figure 19 C is B-B ' cutaway view of Figure 19 A, and wherein first alignment mark 19104 (second mark) and processing graphic pattern alignment mark 19106 are positioned over the back side of mould.
The formation of these marks makes them be suitable for measuring corresponding position and can have common shape such as bar, cross, circle, rectangle and these combination.
By the way, first alignment mark 19104 (second mark) of mould and primary importance measurement markers 19103 can be only need be positioned over position away from the front of mould by parts.In addition, processing graphic pattern alignment mark 19106 also can utilize first alignment mark 19104 (second mark) to prepare.
Figure 20 A to 20E shows the formation example of the mark in the present embodiment separately.
Figure 20 A shows following this structure, i.e. utilization has or do not form the transparent component of mould or the density contrast of this transparent component, above-mentioned primary importance measurement markers, first alignment mark and processing graphic pattern alignment mark is arranged at the back side of mould.As shown in fig. 1, this structure comprises first transparent component 19201, marked region 19202, area of the pattern 19203, front 19204, the back side 19205, face side mark 19206 and rear side mark 19207.
Mould is formed by first transparent component 19201 and has marked region 19202 and an area of the pattern (machining area) 19203.First transparent component can be formed by quartz, Pyrex glass (registration mark), sapphire or the like.
At 19204 places, front of mould, form processing graphic pattern.
At 19205 places, the back side of mould, in marked region 19202, form primary importance measurement markers, first alignment mark and processing graphic pattern alignment mark.In addition, in marked region 19202, form second place measurement markers as the face side mark in the front of mould.
By the way, in Figure 20 A, shown face side mark and rear side mark align coaxially, but can be so that the mode that their along continuous straight runs relatively move forms.The processing graphic pattern alignment mark also can be formed at the front of mould according to the mould production process.
Figure 20 B shows following this structure, and the mark (mark group) that is arranged at place, the mould back side in the structure shown in Figure 20 A is set at inside part 19208 places of mould.Utilization has or the density contrast that do not constitute the transparent component of mould or this transparent component forms inside part 19208.
Figure 20 C shows following this structure, and the mark (mark group) that promptly is arranged on the mould back side constitutes the mark 19209 that is provided with respect to second transparent component.Second transparent component is formed by quartz, Pyrex glass (registration mark), sapphire, ITO, titanium dioxide or the like, and composition can be somewhat different than first transparent component.
Figure 20 D shows following this structure, does not promptly have in the part of first transparent component by being embedded by the mark group that second transparent component forms, and the mark group is made of the mark 19210 that is arranged at place, the mould back side at this part place.
Figure 20 E shows following this structure, and the mark group is made of mark 19211, and mark 19211 is by forming at second transparent component that is arranged at the mould back side from the outstanding part of first transparent component.
Under the situation of the structure shown in Figure 20 D or Figure 20 E, second transparent component also can be changed into metal parts and so on.
(embodiment 3)
In the present embodiment, the process that is used to produce according to mould of the present invention is described.
Figure 21 A to 21G shows the step of the mould production process in the present embodiment, wherein realizes processing by the upset mould.In this process, at first, a surface of processing mould processes another surface of mould then.
More specifically, at first, the substrate 19301 of preparation transparent component applies resist 19304 (Figure 21 A) thereon.Substrate 19301 has the front 19302 and the back side 19303, and processing graphic pattern is arranged on positive 19302.
Then, in order to form the mark group at substrate back, expose and develop (Figure 21 B).The mark group comprises primary importance measurement markers, first alignment mark and processing graphic pattern alignment mark.
Subsequently, this substrate of etching is so that the mark group 19305 at transfer printing substrate back place (Figure 21 C).
Then, flip substrate (Figure 21 D).
Subsequently, resist 19304 is coated on positive 19302 (Figure 21 E).
Subsequently, realize aiming at the processing graphic pattern alignment mark of observing the substrate back place simultaneously, then with processing graphic pattern 19306 and 19307 exposures of second place measurement markers and develop (Figure 21 F).For this purpose, use bilateral litho machine (aligner) as exposure sources.
Then, etch substrate and remove resist so that finish mould (Figure 21 G) with processing graphic pattern 19306 and second place measurement markers 19307.
By the way, front portion and back portion are formed on two substrates separably, can apply each other then so that prepare the mould with first mark 19305, processing graphic pattern 19306 and second portion measured pattern 19307.
Usually, in the mould of above preparation, guaranteed that the position that is positioned at the pattern on the same level has desirable accuracy.
On the other hand, between Different Plane such as front and back, the positioning accuracy between each plane is lower.
Therefore, think that first alignment mark, primary importance measurement markers and processing graphic pattern alignment mark are set at the desired location place.In addition, second place measurement markers and processing graphic pattern are placed on described position.
On the other hand, because first alignment mark and processing graphic pattern are not positioned on the same level as mentioned above, the position relation between first alignment mark and the processing graphic pattern is uncertain.
Yet the mould in the present embodiment has primary importance measurement markers and second place measurement markers.Therefore, by being used in combination primary importance measurement markers and second place measurement markers and utilizing relative position measurement measurement device position relation therebetween, just clearly this position concerns that wherein this relative position measurement device construction becomes to be used for appearing in the pressworking equipment of embodiments of the invention hereinafter.
(embodiment 4)
In the present embodiment, will describe according to another kind of mould production method of the present invention.
Figure 22 shows the formation example of pattern forming device in the present embodiment.
As shown in figure 22, this pattern forming device comprises travel mechanism 19409 in exposure light source 19401, optical system 19402, optical system driving mechanism 19403, analysis institution 19404, mould retaining part 19405, lens barrel 19406, workpiece retaining part 19407, workpiece pressing mechanism 19408, the face, impression controlling organization 19410 and the unshowned measuring mechanism that is used to measure gap between mould and the workpiece.In Figure 22,19412 represent workpiece (substrate), and 19413 representatives are used to apply the coating material of at least a portion substrate 19412.Mould 19411 is blocked by mould retaining part 19405, so that mould 19411 is set at the position relative with workpiece.Workpiece is made of substrate 19412, and the coating material of being made by light-curable resin 19413 is applied on the substrate 19412 by the mode of spin coating.Workpiece can be moved to the desired position by travel mechanism in the face 19409.In addition, by workpiece pressing mechanism 19408, can regulate to the height of workpiece with to the workpiece applied pressure.
The position of impression controlling organization 19410 control workpiece moves, to workpiece applied pressure, optical system driving mechanism 19403 and light exposure.
In the present embodiment, the major part that is used for the aligning guide of mould and workpiece alignment is to be made of optical system 19402, optical system driving mechanism 19403 and analysis institution 19404.
By optical system driving mechanism 19403, optical system 19402 can move along direction in the face that is parallel to workpiece with perpendicular to the direction of workpiece.
Below, with the optical system that further describes in the present embodiment.
Figure 23 A and 23B are schematic diagram, show the structure that has adopted the optical system of reference marker in the pressworking equipment of present embodiment, wherein, Figure 23 A shows the structure of whole optical system, and Figure 23 B shows by the viewed mark of image pickup device.
In the present embodiment, optical system is designed to adopt with reference to alignment mark.For example in Japanese Laid-Open Patent Application No.Hei 10-335241, this structure has been described.
More particularly, at first, mould 19501 and workpiece 19502 are provided with relative to one another, and between them certain clearance are arranged.Workpiece in the present embodiment is made of the above-mentioned substrate that is coated with resin.
Mould in the present embodiment has first alignment mark 19503 (second mark in the foregoing description) and primary importance measurement markers 19505 on back of the body surface, and has second place measurement markers 19506 (first mark in the foregoing description) at front surface.
On the other hand, workpiece has second alignment mark 19504 (the 3rd mark in the foregoing description).
Below, will the observation of first alignment mark 19503 and second alignment mark 19504 be described.
From the light of light source 19511 through illuminator 19510 and reference marker substrate 19507, and by spectrophotometric reflection to second imaging system 19516 and 19518.
Above-mentioned reference marker substrate is the substrate that is provided with mark on front surface and back of the body surface, and when mark was projected to one of front surface and back of the body surface and goes up, the position relation of mark was just clear.For example, this reference marker substrate is such substrate, promptly is formed with two marks, and when being projected on the substrate front surface with these two marks of box lunch, these two marks overlap each other.
Each of first reference marker 19509 and second reference marker 19508 is designed to form the optical conjugate relation with following mark.
More particularly, first reference marker 19509 and mark group A (the primary importance measurement markers 19505 and first alignment mark 19503) optical conjugate, and second reference marker 19508 and mark group B (second place measurement markers 19506 and second alignment mark 19504) optical conjugate.Like this, but just measurement markers group A and mark group B respectively with respect to the position of first reference marker and second reference marker.
On the other hand, from light process illuminator 19513, optical splitter 19512 and first imaging system 19520 of light source 19514, to be irradiated on the mark.Reverberation through optical splitter 19512 with towards the second imaging system side transmission.In image pickup device 19517, first reference marker 19509 and first alignment mark 19503 form image, have obtained first image thus.On the other hand, in image pickup device 19519, second reference marker 19508 and second alignment mark 19504 form image, have obtained second image thus. Image pickup device 19517 and 19519 in the present embodiment is CCD or similar device.
Below, alignment methods will be described.
At first, the pattern forming device of present embodiment is designed to, with convenient primary importance measurement markers 19505 and first alignment mark 19503 along perpendicular to the direction of substrate during from the projection of mould back of the body face side, in the situation below in imprinted pattern zone, place, desired position.
More particularly, under first alignment mark 19503 and second alignment mark 19504 overlaps each other and primary importance measurement markers 19505 and second place measurement markers 19506 overlap each other situation, the pattern forming device is designed such that in imprinted pattern zone, place, desired position.
Then, on the basis of primary importance measurement markers 19505, (θ a) for Xa, Ya to measure and store the level/rotation error A of second place measurement markers 19506 in advance.This means, detect the first and second position measurement marks that are designed to overlap each other, whether in fact be in certain position relation to determine them.
By obtain error A (Xa, Ya, θ a) find, when enforcement first alignment mark 19503 and second alignment mark 19504 to impressing in the desired position on time, produce error (B ') like this.This be because, when being designed to overlap each other the actual formation of the first and second position measurement marks that is provided with, have under the situation of error, be positioned at first alignment mark 19503 on one deck with the primary importance measurement markers and also comprise this error.More particularly, first alignment mark and primary importance measurement markers are positioned at on one deck, are in a kind of relation so that guarantee the position of first alignment mark and primary importance measurement markers.Here, " assurance " means, the design attitude of first alignment mark is with the position of actual first alignment mark that is formed is consistent accurately each other by described manufacturing process.
Particularly, mould is performed with aiming in the following manner of workpiece.
Observe first alignment mark 19503 and second alignment mark 19504.Figure 23 B shows the observed image by image pickup (sensing) device.
Shown in Figure 23 B, on the basis of first alignment mark 19503, measure and store the level/rotation error B (Xb, Yb, θ b) of second alignment mark 19504.The position relation that is produced equals the position relation between processing graphic pattern and the primary importance measurement markers.Travelling workpiece flatly and/or rotatably is so that error B equals first alignment mark that calculates by above-mentioned error A and the error B ' between second alignment mark.In other words, the realization mould is aimed at workpiece, so that satisfy condition: B=B '.As a result, the position transfer printing processing graphic pattern that can want.
By above-mentioned alignment methods,, also can obtain the position relation between mark and the workpiece, to allow the aligning between mould and the workpiece even making owing to mould and contacting of resin under the invisible situation of mark of mold surface.By the way, by using mark, can realize amplification correction in four bights.In addition, according to reference coordinate, travelling workpiece like this is so that (error B ' that θ a) calculates and measured error B (Xb, Yb, θ b) satisfy equation: B '+B=0 for Xa, Ya by error A.
(embodiment 5)
In the present embodiment, method according to manufacturing moulds different among a kind of and the embodiment 3 of the present invention is described.
Figure 24 A shows mould step of manufacturing in the present embodiment to Figure 24 E, wherein, is to implement processing from a side of mould.In embodiment 3, be to implement processing by mould is turned upside down.More particularly, at first, a surface of processing mould, then, another surface of processing mould.On the other hand, in the present embodiment, all are front surface and back of the body surfaces from side direction processing mould.
The mould manufacture method of present embodiment is described to Figure 24 E with reference to Figure 24 A.
More particularly, at first, the substrate 19601 (Figure 24 A) of preparation transparent component.This substrate 19601 has front surface 19602 and back of the body surface 19603, and processing graphic pattern is located on the front surface 19602.
Next, on the back of the body surface of substrate, form primary importance measurement markers 19605, then, on the front surface of substrate, form second place measurement markers 19604 (Figure 24 B).
First alignment mark (second mark in the foregoing description) is positioned on the same surface with primary importance measurement markers 19605, and processing graphic pattern alignment mark (first mark among the embodiment) is positioned on the same surface with second place measurement markers 19604.As in front surface and the surperficial method that forms mark in succession of the back of the body, adopting and use femtosecond (10 with high accuracy level from mould one side
-15Second) method of laser instrument.Like this, each mark is arranged on accurate position.
Next, on the front surface 19602 of substrate 19601, apply resist layer 19606 (Figure 24 C).This resist layer 19606 also comprises and is used to form antireflection film or the necessary film formation material of analog.
Afterwards, after the processing graphic pattern exposure and developing, aim at (Figure 24 D) in the processing graphic pattern alignment mark on observing the substrate front surface.For this reason, as exposure sources, can use electron beam exposure equipment or as the exposure sources of scanner or steeper and so on.Can be according to the size of processing graphic pattern and suitably selected these exposure sources.
Next, the etched and resist layer of substrate is removed, to finish a mould (Figure 24 E).
By the way, according to the processing method of using femto-second laser, can the inside of mould be processed.In addition, be under the situation of micro/nano level at processing graphic pattern, also available femto-second laser replaces exposure sources to implement processing.In addition, when the processing mould is inner, also can adopt a kind of like this method, promptly from the front surface side laminate member of mould.
(embodiment 6)
In the present embodiment, description is the constructed embodiment of using optical systems different among a kind of structure and the embodiment 4 when using mould of the present invention to carry out pressure processing.
Figure 25 is a schematic diagram, shows the structure that does not adopt the optical system of reference marker in the present embodiment.
In the present embodiment, as different from Example 4, this optical system does not adopt with reference to alignment mark.
More particularly, at first, mould 19701 and workpiece 19702 are provided with relative to one another, and certain interval is arranged therebetween.
Mould in the present embodiment has first alignment mark 19703 (second mark in the foregoing description), primary importance measurement markers 19705 and second place measurement markers 19706 (first mark in the foregoing description).In addition, workpiece has second alignment mark 19704 (the 3rd mark in the foregoing description).
Next, will the observation of first alignment mark 19703 and second alignment mark 19704 be described.
From the light process illuminator 19709 and first imaging system 19707 of light source 19710, to shine on the mark.Reverberation is through first imaging system 19707 and second imaging system 19711 and observed by image pickup (sensing) device 19712.By first mark (first alignment mark and primary importance measurement markers) is observed and stored to moving optical system by means of optical system driving mechanism 19713.Then, by moving optical system, observe and store second mark (second alignment mark and second place measurement markers).
Next, a kind of alignment methods will be described.
At first, observe the primary importance measurement markers, observe second place measurement markers then.
By these two images, on the basis of primary importance measurement markers, (θ a) for Xa, Ya to measure and store the level/rotation error A of second place measurement markers 19506 in advance.
Then, observe first alignment mark of being located on the mould, and then observe second alignment mark of being located on the workpiece.Figure 23 B shows the observed image by image pickup (sensing) device.
By these two images, on the basis of first alignment mark, measure and store the level/rotation error B (Xb, Yb, θ b) of second alignment mark.Then, travelling workpiece flatly and/or rotatably is so that first alignment mark that is calculated by error A (Xb, Yb, θ b) and the error B (Xb, Yb, θ b) of error B ' between second alignment mark and actual measurement satisfy condition: B '=B.Therefore, can locate the transfer printing processing graphic pattern in the desired position.
Although described the present invention with reference to structure disclosed herein, be not limited to the details set forth, and the application is intended to contain those and drops on for modification or variation in improved purpose or the claims protection domain.
Claims (4)
1. a pattern formation method is used for being arranged on the pattern on the mould and forming pattern on parts to be processed by utilization, and this method comprises:
Implement mould and parts to be processed aiming at by utilizing primary importance information and second place information along direction in the face of mould area of the pattern, described primary importance information be about be arranged on and the surface of the formation area of the pattern of mould at first mark on the mold surface of same horizontal plane be positioned to away from the relative position relation between second mark on the surface of described formation area of the pattern, described second place information is about second mark and is arranged on relative position relation between the 3rd mark on the parts to be processed.
2. method according to claim 1, it is characterized in that, by storage about horizontal error between second mark and first mark or at least one first control information in the rotation error, storage is about horizontal error between second mark and the 3rd mark or at least one second control information in the rotation error, and by utilizing described first control information and described second control information to carry out moving horizontally the operation of parts to be processed and moving at least one operation in the operation of parts to be processed with respect to mould rotation, thereby implement to aim at respect to mould.
3. pattern transfer equipment comprises:
Be used to implement the aligning guide of aiming at of mould and parts to be processed, described aligning guide is configured to by utilizing primary importance information and second place information to implement mould and parts to be processed aiming at along direction in the face of mould area of the pattern, described primary importance information be about be arranged on and the surface of the formation area of the pattern of mould at first mark on the mold surface of same horizontal plane be arranged to away from the relative position relation between second mark on the surface of described formation area of the pattern, this second place information is about second mark and be arranged on relative position relation between the 3rd mark on the parts to be processed.
4. equipment according to claim 3 is characterized in that, described aligning guide comprises and is used to store first storage area of primary importance information and is used to store second storage area of second place information.
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2005168842 | 2005-06-08 | ||
| JP2005168842 | 2005-06-08 | ||
| JP2005302225 | 2005-10-17 | ||
| JP2005302703 | 2005-10-18 | ||
| JP2006137319 | 2006-05-17 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2009101409397A Division CN101604124B (en) | 2005-06-08 | 2006-06-07 | Mold, pattern forming method, and pattern forming apparatus |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1876395A CN1876395A (en) | 2006-12-13 |
| CN100503265C true CN100503265C (en) | 2009-06-24 |
Family
ID=37509025
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2009101409397A Expired - Fee Related CN101604124B (en) | 2005-06-08 | 2006-06-07 | Mold, pattern forming method, and pattern forming apparatus |
| CNB2006100917162A Expired - Fee Related CN100503265C (en) | 2005-06-08 | 2006-06-07 | Mold, pattern forming method, and pattern forming apparatus |
Family Applications Before (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2009101409397A Expired - Fee Related CN101604124B (en) | 2005-06-08 | 2006-06-07 | Mold, pattern forming method, and pattern forming apparatus |
Country Status (1)
| Country | Link |
|---|---|
| CN (2) | CN101604124B (en) |
Families Citing this family (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP2584408B1 (en) | 2007-02-06 | 2020-10-07 | Canon Kabushiki Kaisha | Imprint method and imprint apparatus |
| JP4091969B1 (en) * | 2007-07-12 | 2008-05-28 | 住友ベークライト株式会社 | Light receiving device and method for manufacturing light receiving device |
| JP6061524B2 (en) * | 2011-08-11 | 2017-01-18 | キヤノン株式会社 | Imprint apparatus and article manufacturing method |
| JP6071221B2 (en) * | 2012-03-14 | 2017-02-01 | キヤノン株式会社 | Imprint apparatus, mold, imprint method, and article manufacturing method |
| CN103631086A (en) * | 2012-08-21 | 2014-03-12 | 华中科技大学 | Manufacturing method for micro-nano graphs used for integrated optoelectronic device |
| JP6120678B2 (en) * | 2013-05-27 | 2017-04-26 | キヤノン株式会社 | Imprint method, imprint apparatus and device manufacturing method |
| JP6611450B2 (en) * | 2015-03-31 | 2019-11-27 | キヤノン株式会社 | Imprint apparatus, imprint method, and article manufacturing method |
| JP6602033B2 (en) * | 2015-03-31 | 2019-11-06 | キヤノン株式会社 | Imprint apparatus, supply amount distribution generation method, imprint method, and article manufacturing method |
| JP6700936B2 (en) | 2016-04-25 | 2020-05-27 | キヤノン株式会社 | Imprint apparatus, imprint method, and article manufacturing method |
| JP6894285B2 (en) * | 2017-04-26 | 2021-06-30 | Ｔｏｗａ株式会社 | Resin molding equipment and manufacturing method of resin molded products |
| CN110752309B (en) * | 2019-10-10 | 2022-07-08 | 恩利克（浙江）智能装备有限公司 | Foldable flexible transparent anode and manufacturing method thereof |
| CN110764364B (en) * | 2019-11-01 | 2021-05-25 | 京东方科技集团股份有限公司 | Manufacturing method of nano pattern, nano imprinting substrate and display substrate |
| CN111923625B (en) * | 2020-08-05 | 2022-05-10 | 江苏达丽建筑材料有限公司 | PVC color film printing process |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6387787B1 (en) * | 2001-03-02 | 2002-05-14 | Motorola, Inc. | Lithographic template and method of formation and use |
| CN1478641A (en) * | 2002-07-18 | 2004-03-03 | 佳能株式会社 | Metal mould for forming optical element and optical element forming product |
| EP1526411A1 (en) * | 2003-10-24 | 2005-04-27 | Obducat AB | Apparatus and method for aligning surface |
| EP1533657A1 (en) * | 2003-11-21 | 2005-05-25 | Obducat AB | Multilayer nano imprint lithography |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP2264523A3 (en) * | 2000-07-16 | 2011-11-30 | Board Of Regents, The University Of Texas System | A method of forming a pattern on a substrate in imprint lithographic processes |
-
2006
- 2006-06-07 CN CN2009101409397A patent/CN101604124B/en not_active Expired - Fee Related
- 2006-06-07 CN CNB2006100917162A patent/CN100503265C/en not_active Expired - Fee Related
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6387787B1 (en) * | 2001-03-02 | 2002-05-14 | Motorola, Inc. | Lithographic template and method of formation and use |
| CN1478641A (en) * | 2002-07-18 | 2004-03-03 | 佳能株式会社 | Metal mould for forming optical element and optical element forming product |
| EP1526411A1 (en) * | 2003-10-24 | 2005-04-27 | Obducat AB | Apparatus and method for aligning surface |
| EP1533657A1 (en) * | 2003-11-21 | 2005-05-25 | Obducat AB | Multilayer nano imprint lithography |
Also Published As
| Publication number | Publication date |
|---|---|
| CN101604124B (en) | 2011-07-27 |
| CN1876395A (en) | 2006-12-13 |
| CN101604124A (en) | 2009-12-16 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN100503265C (en) | Mold, pattern forming method, and pattern forming apparatus | |
| KR100743289B1 (en) | Mold, pattern forming method, and pattern forming apparatus | |
| KR101045434B1 (en) | Alignment meth0d, imprint meth0d, alignment apparatus, and p0siti0n measurement meth0d | |
| EP2171537B1 (en) | Alignment system and method for a substrate in a nano-imprint process | |
| CN100460805C (en) | Application of scatterometry alignment in imprint lithography | |
| CN101427185B (en) | Align method, imprinting method, align device and imprinting device | |
| TWI567486B (en) | Pattern formation method, lithography apparatus, lithography system, and article manufacturing method | |
| US7136150B2 (en) | Imprint lithography template having opaque alignment marks | |
| KR101768749B1 (en) | Lithography apparatus, alignment method, and method of manufacturing article | |
| CN100536073C (en) | Pattern forming method and pattern forming system | |
| KR100840799B1 (en) | Mold, imprint method, and process for producing chip | |
| JP4926881B2 (en) | Imprint apparatus and alignment method | |
| US20060032437A1 (en) | Moat system for an imprint lithography template | |
| JP2008221821A (en) | Pattern transfer device, imprint device, pattern transfer method, and alignment method | |
| JP7022615B2 (en) | Imprint method, imprint device, mold manufacturing method, and article manufacturing method |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20090624 |