CN100502070C - Electroluminescent device and method for producing the same - Google Patents
Electroluminescent device and method for producing the same Download PDFInfo
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- CN100502070C CN100502070C CNB200710070055XA CN200710070055A CN100502070C CN 100502070 C CN100502070 C CN 100502070C CN B200710070055X A CNB200710070055X A CN B200710070055XA CN 200710070055 A CN200710070055 A CN 200710070055A CN 100502070 C CN100502070 C CN 100502070C
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- Prior art keywords
- film
- silicon substrate
- tio
- electroluminescent
- preparation
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- 238000004519 manufacturing process Methods 0.000 title 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 34
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 34
- 239000010703 silicon Substances 0.000 claims abstract description 34
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims abstract description 28
- 239000010936 titanium Substances 0.000 claims abstract description 25
- 239000000758 substrate Substances 0.000 claims abstract description 21
- 238000006243 chemical reaction Methods 0.000 claims abstract description 12
- 238000002360 preparation method Methods 0.000 claims abstract description 10
- 238000000151 deposition Methods 0.000 claims abstract description 7
- 230000008021 deposition Effects 0.000 claims abstract description 6
- 229910052751 metal Inorganic materials 0.000 claims abstract description 3
- 239000002184 metal Substances 0.000 claims abstract description 3
- 229910010413 TiO 2 Inorganic materials 0.000 claims description 14
- 238000004544 sputter deposition Methods 0.000 claims description 11
- 239000004408 titanium dioxide Substances 0.000 claims description 10
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 claims description 7
- 230000003647 oxidation Effects 0.000 claims description 6
- 238000007254 oxidation reaction Methods 0.000 claims description 6
- 238000010438 heat treatment Methods 0.000 claims description 5
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 5
- PZZOEXPDTYIBPI-UHFFFAOYSA-N 2-[[2-(4-hydroxyphenyl)ethylamino]methyl]-3,4-dihydro-2H-naphthalen-1-one Chemical compound C1=CC(O)=CC=C1CCNCC1C(=O)C2=CC=CC=C2CC1 PZZOEXPDTYIBPI-UHFFFAOYSA-N 0.000 claims description 2
- 238000004062 sedimentation Methods 0.000 claims description 2
- 238000000034 method Methods 0.000 abstract description 15
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 abstract 1
- 238000010923 batch production Methods 0.000 abstract 1
- 230000001590 oxidative effect Effects 0.000 abstract 1
- 229910052719 titanium Inorganic materials 0.000 abstract 1
- 238000005406 washing Methods 0.000 abstract 1
- 238000005401 electroluminescence Methods 0.000 description 7
- 238000004140 cleaning Methods 0.000 description 4
- 239000007787 solid Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000004020 luminiscence type Methods 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000001194 electroluminescence spectrum Methods 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
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Abstract
The invention discloses a electroluminescent device which uses titania to realize electroluminescent lighting, composed of a silicon substrate, a TiO2 film and an ITO electrode deposited on the front face of the silicon substrate from down to up, and an Ohm contact electrode deposited at the back of the silicon substrate. And the preparation comprises that first washing P-type or N-type silicon slice to be input into a reaction room of direct-current reaction magnetic-control splash device, vacuuming the reaction room, using pure titanium metal as target, using O2 and Ar as splash gas, to process splash deposition to obtain a Ti film, then thermally oxidizing the Ti film in O2 gas, to generate a TiO2 film, splashing an ITO electrode on the TiO2 film, depositing an Ohm contact electrode at the back of the silicon substrate. The invention has simple structure and preparation, while the electroluminescent lighting peak is around 450nm, 515nm and 600nm. The preparation is compatible with prior silicon device plane art, which support the batch production with low cost.
Description
Technical field
The present invention relates to electroluminescent device and preparation method thereof, especially device of titanium dioxide electroluminescent and preparation method thereof.
Background technology
Titanium dioxide is a kind of wide bandgap semiconductor, and its energy gap is 3-3.2ev.The phonon energy of titanium dioxide is lower, can reduce the probability of nonradiative transition.In addition, it also has character such as opto-electronic conversion, optical nonlinearity.These superior performances make titanium dioxide extremely people pay close attention to.Nineteen eighty-three, Nakato.Y group has obtained the electroluminescence (list of references: Nakato Y, Tsumura Aand Tsubomura H, J.Phys.Chem 87 (1983) 2402) of titanium dioxide for the first time with solwution method.Afterwards, group such as Tomoaki Houzouji has obtained the TiO of relative higher-strength with improved solwution method
2Electroluminescence (Akihiko Kudo, and Tadayoshi Sakata, Chemical PhysicsLetters 254 (1996) 109 for list of references: TomoakiHouzouji, Nobuhiro Saito).But the prepared device of solwution method exists with other devices and is difficult to compatibility, and a series of problem such as encapsulation difficulty etc., so solwution method is substituted by solid state process gradually.R.
, group such as Young Kwan Kim and L.Qian prepared TiO with solid state process
2Electroluminescent device (list of references: R
, Robert C Word and M Godinez, Nanotechnology17 (2006) 1858, Young Kwan Kim, Kwaung Youn Lee, Oh Kwan Kwon, DongMyoung Shin, Byoung Chung Sohn, and Jin Ho Choi, Synthetic Metals111-112 (2000) 207, L Qian, T Zhang, S Wageh, Z-S Jin, Z-L Du, Y-S Wang and X-RXu, Nanotechnology 17 (2006) 100).But no matter with solwution method or solid state process, or titanium dioxide presents which kind of crystal formation, TiO
2The electroluminescence peak position all about 600nm, this is by TiO
2In the oxygen room caused, be to belong to TiO
2The defect luminescence of material.But also do not realize the electroluminescence of the silica-based titanium dioxide on the silicon substrate at present.
Summary of the invention
The objective of the invention is electroluminescent device that proposes a kind of titanium dioxide and preparation method thereof.
Electroluminescent device of the present invention is the device of titanium dioxide electroluminescent, by silicon substrate, be deposited on the TiO in silicon substrate front successively from bottom to top
2Film and ITO electrode and the Ohm contact electrode composition that is deposited on the silicon substrate back side.
The preparation method of the electroluminescent device of invention may further comprise the steps:
1) be 0.005-50 ohm with resistivity. centimetre P type or the N type silicon substrate reative cell of putting into the direct current reaction magnetron sputtering device after cleaning, reative cell vacuum degree is evacuated to 5 * 10
-3Pa is a target with pure Ti metal, and as sputtering atmosphere, under 0.8Pa～5Pa pressure, underlayer temperature is 50 ℃～200 ℃, carries out sputtering sedimentation, obtains the Ti film with Ar;
2) silicon substrate that will deposit the Ti film is heated to 400 ℃～600 ℃, at O
2Heat treatment 5h～10h under the atmosphere, the Ti oxidation generates TiO
2Film;
3) at TiO
2Sputter transparent ITO electrode on the film is at silicon substrate backside deposition Ohm contact electrode.
Above-mentioned Ohm contact electrode can be Al or Au.
The present invention can change the crystalline state of Ti film by the adjusting underlayer temperature, by adjusting the thickness that sputtering time changes the Ti film, changes TiO by the temperature and time of regulating thermal oxidation
2The crystalline state of film.
The invention has the advantages that: the structure and the implementation of device are simple, the electroluminescence peak position of the electroluminescent device that makes is at 450nm, 515nm and 600nm, and equipment that this preparation of devices method is used and existing mature silicon device plane process compatibility easily realize extensive, the low-cost advantage of making.
Description of drawings
Fig. 1 is the electroluminescent device schematic diagram of invention;
Fig. 2 is the electroluminescence spectrum that the electroluminescent device of invention obtains under the difference biasing.
Embodiment
Further specify the present invention below in conjunction with accompanying drawing.
With reference to Fig. 1, the electroluminescent device of invention has TiO from bottom to top successively in the front of silicon substrate 1
2Film 2 and transparent ITO electrode 3 have Ohm contact electrode 4 at the silicon substrate back side.
Embodiment 1
Take following processing step: 1) clean P type＜100 〉, resistivity is that 0.005 ohmcm, size are 15 * 15mm
2, thickness is 675 microns silicon chip, puts into the reative cell of direct current reaction magnetron sputtering device after the cleaning, reative cell vacuum degree is evacuated to 5 * 10
-3Pa; Utilize the method deposit thickness of reaction direct current sputtering to be about the Ti film of 100nm on silicon chip, when sputter, to adopt purity be 99.9% 50 ℃ of Ti metallic target, underlayer temperatures, sputtering power 70W, pass to Ar (flow is 30sccm), operating pressure is 0.8Pa; 2) will deposit the silicon chip of Ti film at O
2The following 500 ℃ of heat treatment 5h of atmosphere, the Ti oxidation generates TiO
2Film; 3) at TiO
2The ITO electrode that sputter 50nm is thick on the film, as Ohm contact electrode, both areas are 10 * 10mm at the thick Al of silicon backside deposition 100nm
2
Embodiment 2
Take following processing step: 1) clean N type＜100 〉, resistivity is that 0.5 ohmcm, size are 15 * 15mm
2, thickness is 675 microns silicon chip, puts into the reative cell of direct current reaction magnetron sputtering device after the cleaning, reative cell vacuum degree is evacuated to 5 * 10
-3Pa; Utilize the method deposit thickness of reaction direct current sputtering to be about the Ti film of 150nm on silicon chip, when sputter, to adopt purity be 99.9% 100 ℃ of Ti metallic target, substrates, sputtering power 80W, pass to Ar (flow is 45sccm), operating pressure is 2Pa; 2) will deposit the silicon chip of Ti film at O
2The following 400 ℃ of heat treatment 8h of atmosphere, the Ti oxidation generates TiO
2Film; 3) at TiO
2The ITO electrode that sputter 50nm is thick on the film, as Ohm contact electrode, both areas are 10 * 10mm at the thick Au of silicon backside deposition 100nm
2
Embodiment 3
Take following processing step: 1) clean P type＜100 〉, resistivity is that 50 ohmcms, size are 15 * 15mm
2, thickness is 675 microns silicon chip, puts into the reative cell of direct current reaction magnetron sputtering device after the cleaning, reative cell vacuum degree is evacuated to 5 * 10
-3Pa; Utilize the method deposit thickness of reaction direct current sputtering to be about the Ti film of 200nm on silicon chip, when sputter, to adopt purity be 99.9% 200 ℃ of Ti metallic target, underlayer temperatures, sputtering power 100W, pass to Ar (flow is 45sccm), operating pressure is 5Pa; 2) will deposit the silicon chip of Ti film at O
2The following 600 ℃ of heat treatment 10h of atmosphere, the Ti oxidation generates TiO
2Film; 3) at TiO
2The ITO electrode that sputter 50nm is thick on the film, as Ohm contact electrode, both areas are 10 * 10mm at the thick Al of silicon backside deposition 100nm
2
Fig. 2 has provided different driving voltage electroluminescence (EL) spectrum down that the device that obtains by said method at room temperature records, TiO at this moment
2Film connects negative, and the Si substrate just connects.As can be seen from the figure, along with the increase of voltage, electroluminescent intensity is also along with increase, and this is typical electroluminescent feature.In addition, three glow peaks of the 450nm in the electroluminescent graph, 515nm and 600nm are TiO
2Defect luminescence.
Claims (2)
1. an electroluminescent device is characterized in that it is the device of titanium dioxide electroluminescent, by silicon substrate (1), be deposited on the TiO in silicon substrate front successively from bottom to top
2Film (2) and ITO electrode (3) and Ohm contact electrode (4) composition that is deposited on the silicon substrate back side.
2. the preparation method of electroluminescent device according to claim 1 is characterized in that may further comprise the steps:
1) be the reative cell of putting into the direct current reaction magnetron sputtering device after the P type of 0.005-50 ohmcm or N type silicon substrate clean with resistivity, reative cell vacuum degree is evacuated to 5 * 10
-3Pa is a target with pure Ti metal, and as sputtering atmosphere, under 0.8Pa～5Pa pressure, underlayer temperature is 50 ℃～200 ℃, carries out sputtering sedimentation, obtains the Ti film with Ar;
2) silicon substrate that will deposit the Ti film is heated to 400 ℃～600 ℃, at O
2Heat treatment 5h～10h under the atmosphere, the Ti oxidation generates TiO
2Film;
3) at TiO
2Sputter transparent ITO electrode on the film is at silicon substrate backside deposition Ohm contact electrode.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB200710070055XA CN100502070C (en) | 2007-07-17 | 2007-07-17 | Electroluminescent device and method for producing the same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB200710070055XA CN100502070C (en) | 2007-07-17 | 2007-07-17 | Electroluminescent device and method for producing the same |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101097981A CN101097981A (en) | 2008-01-02 |
| CN100502070C true CN100502070C (en) | 2009-06-17 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB200710070055XA Expired - Fee Related CN100502070C (en) | 2007-07-17 | 2007-07-17 | Electroluminescent device and method for producing the same |
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Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101587931B (en) * | 2009-06-18 | 2010-07-14 | 浙江大学 | Method for enhancing the electroluminescence of silica-based titanium dioxide devices |
| CN102364708B (en) * | 2011-11-14 | 2013-09-11 | 浙江大学 | Electroluminescence device and manufacturing method thereof |
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2007
- 2007-07-17 CN CNB200710070055XA patent/CN100502070C/en not_active Expired - Fee Related
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| CN101097981A (en) | 2008-01-02 |
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Granted publication date: 20090617 Termination date: 20130717 |