CN100501950C - Thin film transistor and method for manufacturing the same - Google Patents
Thin film transistor and method for manufacturing the same Download PDFInfo
- Publication number
- CN100501950C CN100501950C CNB2006101056086A CN200610105608A CN100501950C CN 100501950 C CN100501950 C CN 100501950C CN B2006101056086 A CNB2006101056086 A CN B2006101056086A CN 200610105608 A CN200610105608 A CN 200610105608A CN 100501950 C CN100501950 C CN 100501950C
- Authority
- CN
- China
- Prior art keywords
- layer
- partly
- patterned
- film transistor
- pattern layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000000034 method Methods 0.000 title claims abstract description 34
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 17
- 239000010409 thin film Substances 0.000 title claims description 41
- 239000010410 layer Substances 0.000 claims abstract description 272
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 81
- 229910052751 metal Inorganic materials 0.000 claims abstract description 57
- 239000002184 metal Substances 0.000 claims abstract description 57
- 239000011241 protective layer Substances 0.000 claims abstract description 22
- 238000004380 ashing Methods 0.000 claims abstract 7
- 239000000758 substrate Substances 0.000 claims description 39
- 238000005530 etching Methods 0.000 claims description 25
- 230000004888 barrier function Effects 0.000 claims description 19
- 230000015572 biosynthetic process Effects 0.000 claims description 16
- 238000010276 construction Methods 0.000 claims description 16
- 239000007789 gas Substances 0.000 claims description 11
- 239000001301 oxygen Substances 0.000 claims description 8
- 229910052760 oxygen Inorganic materials 0.000 claims description 8
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 7
- 239000003795 chemical substances by application Substances 0.000 claims description 4
- 238000009832 plasma treatment Methods 0.000 claims description 4
- 238000001312 dry etching Methods 0.000 claims description 3
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 claims description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 2
- 150000002926 oxygen Chemical class 0.000 claims 1
- 230000001681 protective effect Effects 0.000 abstract 4
- 238000009413 insulation Methods 0.000 abstract 3
- 238000005516 engineering process Methods 0.000 description 6
- 239000000463 material Substances 0.000 description 6
- 238000000151 deposition Methods 0.000 description 5
- 230000002950 deficient Effects 0.000 description 4
- 230000008021 deposition Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000003628 erosive effect Effects 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 2
- 238000002161 passivation Methods 0.000 description 2
- 238000012958 reprocessing Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 2
- JYMITAMFTJDTAE-UHFFFAOYSA-N aluminum zinc oxygen(2-) Chemical compound [O-2].[Al+3].[Zn+2] JYMITAMFTJDTAE-UHFFFAOYSA-N 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- JAONJTDQXUSBGG-UHFFFAOYSA-N dialuminum;dizinc;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Al+3].[Al+3].[Zn+2].[Zn+2] JAONJTDQXUSBGG-UHFFFAOYSA-N 0.000 description 1
- 238000004299 exfoliation Methods 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 239000013081 microcrystal Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
Images
Landscapes
- Thin Film Transistor (AREA)
Abstract
The provided manufacture method for a TFT comprises: forming in turns an insulation layer, a metal pattern layer, a protective layer, and a photoresist pattern layer all on the plate; removing the uncovered protective and insulation layer to form the protective/insulation pattern layer respectively; ashing the photoresist layer to form a undercut structure and expose some protective pattern layer; forming an electrode pattern layer on the plate with three parts covering the protective, metal pattern and photoresist layer respectively; finally, stripping the photoresist layer.
Description
Technical field
The present invention relates to a kind of thin-film transistor structure, particularly relate in the technology that forms thin-film transistor, utilize the step of reprocessing photoresist layer, patterned photoresist layer is formed undercut construction, make the electrode layer of subsequent deposition on insulating pattern layer and metal pattern layer, to form continuously and the electrode layer that can not rupture.
Background technology
The structure of LCD comprises that array base palte (array substrate), colored optical filtering substrates (colorfilter substrate) are attached on the array base palte, and liquid crystal layer is formed between array base palte and the colored filter.Wherein, have many thin-film transistor (TFT on the array base palte; Thin transistor film), utilize optical lithography program to form with several photo mask steps.
Figure 1A to Fig. 1 E is illustrated in and forms in the thin-film transistor array base-plate technology, because the fracture of protective layer electrode layer that over etching causes, and the schematic diagram that defective takes place between source/drain and the pixel electrode.At first, with reference to Figure 1A, in forming the thin-film transistor array base-plate process, behind the formation protective layer 106, on substrate 100, comprise insulating barrier 102, metal level 104 and protective layer 106 in regular turn.
Equally with reference to Figure 1A; after photoresist layer 110 covers protective layer 106; photoresist layer 110 is carried out lithographic procedures; for example exposure (exposure), (develop) program of developing; by this, photoresist layer 110 forms the patterned photoresist layer 110a with specific pattern.
Next, with reference to Figure 1B, etch protection layer 106 and insulating barrier 104 are positioned at substrate 100 tops to form protection patterned layer 106a and insulating pattern layer 102a in regular turn, and expose partly metal pattern layer 104a surface.
Then, with reference to figure 1C, in order to prevent the electrode layer be short-circuited (short) of metal level 104 tops and patterned photoresist layer 110a top, and cause the peel-ability variation of follow-up patterned photoresist layer 110a, and cause patterned photoresist layer 110a residual, must carry out the step of an over etching (over etching) again.Therefore, when carrying out over etching, the side of protection patterned layer 106a can produce lateral erosion (side etch), makes the protection patterned layer 106a that is positioned at patterned photoresist layer 110a below form undercut construction (undercut structure).But because the etching selectivity between protection patterned layer 106a and the insulating pattern layer 102a is not high enough; therefore, when protecting the over etching of patterned layer 106a, the side of insulating pattern layer 102a also can produce lateral erosion simultaneously; therefore with respect to metal level 104, also can form undercut construction.
Next, with reference to figure 1D, electrode layer is deposited on the structure of Fig. 1 C, by this first of electrode layer partly 120a cover patterned photoresist layer 110a, electrode layer second partly 120b be positioned at that metal pattern layer 104a partly goes up and electrode layer the 3rd partly 120c cover partly substrate 100.Yet; because protection patterned layer 106a and insulating pattern layer 102a are undercut construction; make second above the metal pattern layer 104a partly the electrode layer 120 of 120b can't be connected with the electrode layer of the 3rd part 120c on being positioned at substrate 100 partly; there is not continuity; and generation defective (or gap); shown in Fig. 1 E, so the fracture of second part 120b of electrode layer and the 3rd part 120c can cause open circuit (open).
Therefore; in the process according to above-mentioned formation thin-film transistor display element; can learn; in the technology that the photoresist of existing positive light anti-etching agent peels off; after etch protection layer and insulating barrier; for the electrode layer that prevents metal level top and electrode layer above the photoresist layer are short-circuited; and cause follow-up photoresist layer peel-ability variation; and cause the photoresist layer residual; must carry out the step of an over etching again, make the protective layer that is positioned at photoresist layer below form undercut construction.But because the etching selectivity between protective layer and the insulating barrier is not high enough, therefore, when carrying out the over etching of protective layer, also forms undercut construction simultaneously, thereby cause the fracture of electrode layer, and make and open circuit between pixel electrode and the source/drain.
Summary of the invention
Purpose of the present invention is in the technology of thin-film transistor; by handling the step of patterned photoresist layer; patterned photoresist layer is formed undercut construction; by this; at subsequent deposition between electrode layer and the electrode layer on the protective layer on the patterned photoresist layer; problem of short-circuit can be do not produced, therefore the ability that photoresist peels off can be do not had influence on.Also therefore can omit the step of above-mentioned over etching, insulating barrier thereby can not form undercut construction,, between electrode layer and the electrode layer on the substrate on the metal level, can not produce the problem of fracture and cause opening circuit between source/drain and the pixel electrode at subsequent deposition.
According to above-described purpose; the invention provides a kind of thin-film transistor and manufacture method thereof; key step comprises: form insulating barrier and be covered on the substrate; then; form metal pattern layer (metal patternlayer) and be covered on the insulating barrier, protective layer (passivation layer) is formed be covered in the metal pattern layer top again.Then; mode with selective removal; to do not removed by protective layer and the insulating barrier that patterned photoresist layer covered; protect patterned layer (passivation pattern layer) and insulating pattern layer (insulating pattern layer) to form, and expose metal pattern layer partly and substrate partly.
Then, patterned photoresist layer is carried out cineration step, make patterned photoresist layer form undercut construction, and expose protection patterned layer partly.Next; on substrate, form electrode pattern layer; wherein first of electrode pattern layer partly cover the protection patterned layer of part, the second part covering metal pattern layer and the substrate partly partly of electrode pattern layer, and the 3rd part of electrode pattern layer covers on the patterned photoresist layer.At last, carry out photoresist and peel off step,, also remove the 3rd part of the electrode pattern layer that is positioned on the patterned photoresist layer simultaneously to remove patterned photoresist layer.Because second of electrode pattern layer partly covers metal pattern layer partly and substrate partly, therefore, does not have any defective (or space) between metal pattern layer and substrate, do not have any situation that opens circuit yet and take place.
Description of drawings
Figure 1A to Fig. 1 E when forming thin-film transistor array base-plate, owing to over etching causes electrode layer can't form a continuity structure in the photoresist exfoliation process according to existing technology, and each formation step schematic diagram that causes electrode layer to open circuit; And
Each step schematic diagram of Fig. 2 A to Fig. 2 G shows the thin-film transistor and the manufacture method thereof of the preferred embodiment of the present invention.
The simple symbol explanation
10 substrates
12 first metal pattern layer
14 insulating barriers
141 insulating pattern layers
16 channel layers
18 ohmic contact layers
First part of 18a ohmic contact layer
Second part of 18b ohmic contact layer
181 ohmic contact patterned layer
20 second metal levels
First section of 20a second metal level
Second section of 20b second metal level
201 second metal pattern layer
22 first patterned photoresist layers
24 protective layers
241 protection patterned layer
26 second patterned photoresist layers
261 undercut construction
30 electrode layers
First part of 30a electrode pattern layer
Second part of 30b electrode pattern layer
The 3rd part of 30c electrode pattern layer
100 substrates
102 insulating barriers
102a insulating pattern layer
104 metal levels
The 104a metal pattern layer
106 protective layers
106a protects patterned layer
110 photoresist layers
The 110a patterned photoresist layer
120 electrode layers
First part of 120a electrode layer
Second part of 120b electrode layer
The 3rd part of 120c electrode layer
Embodiment
Being described in detail as follows of some embodiments of the invention, however except this was described in detail, the present invention can also be widely implements at other embodiment.That is scope of the present invention is not subjected to the restriction of the embodiment that proposed, and should be as the criterion with the claim that the present invention proposes.
Each step schematic diagram of Fig. 2 A to Fig. 2 G shows the thin-film transistor and the manufacture method thereof of the preferred embodiment of the present invention.At first, see also Fig. 2 A, the substrate 10 with first metal pattern layer 12 is provided.Then, forming insulating barrier (insulating layer) 14 is covered on first metal pattern layer 12 and the substrate 10.Then, form channel layer (channel layer) 16 and ohmic contact layer (ohmic contact layer) 18 in regular turn on insulating barrier 14, and remove channel layer 16 and ohmic contact layer 18 partly.Wherein, first metal pattern layer 12 is to utilize deposition (depositing) or in the mode of sputter (sputtering), be formed on the substrate (substrate) 10.The material of substrate 10 can be transparency carrier (transparent substrate), and for example glass (glass) also can be opaque substrate, and for example pottery, silicon wafer also can be flexible base plate, for example plastics.And the material of channel layer 16, ohmic contact layer 18 can be amorphous silicon, polysilicon, monocrystalline silicon, microcrystal silicon, or the mixture of above-mentioned material all can be suitable for.
Then, please refer to Fig. 2 B, form second metal level 20, and form first patterned photoresist layer 22 on second metal level 20 in the superstructure of Fig. 2 A.Then, with reference to figure 2C, with first patterned photoresist layer 22 as the shielding, carry out etching step, second metal level 20 and the ohmic contact layer 18 partly partly of etching in regular turn, remove the part that is not covered, have second metal pattern layer 201 of the first section 20a and the second section 20b, and have the partly ohmic contact patterned layer 181 of 18b of the first part 18a and second with formation by first patterned photoresist layer 22.Wherein, the first part 18a and second of ohmic contact patterned layer 181 partly has slit between the 18b, to expose the partly surface of channel layer 16.In addition, in the present embodiment, comprise that also etch-stop patterned layer (not icon) is positioned at channel layer 16 tops, make ohmic contact patterned layer 181 first partly 18a and the second part 18b lay respectively at the both sides of etch-stop patterned layer.And the first section 20a of second metal pattern layer 201 and the second section 20b can be used as the source electrode (sourceelectrode) and the drain electrode (drain electrode) of the thin-film transistor of present embodiment.
With reference to figure 2D, form protective layer 24 and be covered on the structure of Fig. 2 C, then form second patterned photoresist layer 26 on protective layer 24, second patterned photoresist layer 26 comprises positive light anti-etching agent or negative type photoresist.Then,,, remove the protective layer 24 and the insulating barrier 14 that are not covered, to form protection patterned layer 241 and insulating pattern layer 141 by second patterned photoresist layer 26 in the mode of selective removal with reference to figure 2E.
Then; see also Fig. 2 F; second patterned photoresist layer 26 is partly carried out reprocessing (posttreatment); for example ashing program; so that make second patterned photoresist layer 26 form undercut construction (undercut structure) 261, in order to expose protection patterned layer 241 partly.Wherein, can utilize the mode of isotropic etching in the step of second patterned photoresist layer, 26 formation undercut construction, remove second patterned photoresist layer 26 partly, make second patterned photoresist layer 26 form the structure (being undercut construction 261) of chamfering; Perhaps, utilize the mode of plasma treatment, second patterned photoresist layer 26 is partly removed, wherein, the employed gas of plasma treatment can be oxygen containing gas, for example oxygen (O
2), ozone (O
3), water or steam.
Consult Fig. 2 F equally; form electrode pattern layer 30 on substrate 10; make first 30a partly of electrode pattern layer 30; the second part 30b that covers protection patterned layer 241 partly, electrode pattern layer 30 covers second metal pattern layer 201 partly and substrate 10 partly; and the 3rd part 30c of electrode pattern layer 30, be covered in second patterned photoresist layer 26 with undercut construction 261.Wherein, the material of electrode pattern layer 30 can be a transparency electrode, for example, and indium tin oxide (indium tin oxide; ITO), indium-zinc oxide (indium zinc oxide; IZO), aluminium zinc oxide (aluminum zinc oxide; AZO) or the material of analog material.Because the second part 30b of electrode pattern layer 30 is continuous structures, so in the process that thin-film transistor structure forms, can not produce defective (or space) (gap), can not cause the second section 20b of the electrode pattern layer 30 and second metal conducting layer to have the phenomenon that opens circuit to take place yet.In addition, can be by the formation method or the prescription (recipe) of different electrode pattern layer 30, make electrode pattern layer 30 first partly 30a and electrode pattern layer 30 second partly 30b can be (shown in Fig. 2 F) that separates, maybe can be (the not icon) that connects.
Then consult Fig. 2 G; mode with selective removal divests (stripping) with second patterned photoresist layer 26; remove the 3rd part 30c of the electrode pattern layer 30 that is positioned at second patterned photoresist layer, 26 tops simultaneously; and keep the first part 30a that is positioned at the electrode pattern layer 30 of protecting patterned layer 241 tops, and cover the partly second metal pattern layer 20b and the partly second part 30b of the electrode pattern layer 30 of substrate 10.At this, remove second patterned photoresist layer 26 and electrode pattern layer 30 methods are included as dry-etching or Wet-type etching.
The above is the preferred embodiments of the present invention only, is not in order to limit claim of the present invention; All any those skilled in the art change or modify not breaking away from being equal to of being finished under the disclosed spirit, and all should be included in the claim.
Claims (26)
1, a kind of method of making thin-film transistor comprises:
Forming insulating barrier is covered on the substrate;
Form metal pattern layer on this insulating barrier;
Forming protective layer is covered on this metal pattern layer;
Form patterned photoresist layer on this protective layer;
Selective removal is protected patterned layer and insulating pattern layer not by this protective layer and this insulating barrier that this patterned photoresist layer covered to form, and exposes partly this metal pattern layer and partly this substrate;
Ashing is this patterned photoresist layer partly, so that patterned photoresist layer is formed undercut construction, and in order to expose partly this protection patterned layer;
Form electrode pattern layer on this substrate; and this patterned photoresist layer of selective removal; and this electrode pattern layer has at least one first part, at least one second part and at least one the 3rd partly; wherein this first part is covered on this protection patterned layer of part; this second part is covered on this metal pattern layer of part and this substrate of part, and the 3rd partly covers this patterned photoresist layer.
2, the method for manufacturing thin-film transistor as claimed in claim 1, wherein the step of this this patterned photoresist layer of ashing part utilizes isotropic etching to remove partly this patterned photoresist layer.
3, the method for manufacturing thin-film transistor as claimed in claim 2, wherein the employed gas of this isotropic etching is oxygen containing gas.
4, the method for manufacturing thin-film transistor as claimed in claim 1, wherein the step of this this patterned photoresist layer of ashing part is utilized partly this patterned photoresist layer of plasma treatment.
5, the method for manufacturing thin-film transistor as claimed in claim 4, wherein to handle employed gas be oxygen containing gas to this plasma.
6, the method for manufacturing thin-film transistor as claimed in claim 5, wherein this oxygen containing gas comprises oxygen, ozone or water.
7, the method for manufacturing thin-film transistor as claimed in claim 1 comprises that also selective removal is positioned at the 3rd on this patterned photoresist layer partly.
8, the method for manufacturing thin-film transistor as claimed in claim 1, wherein selective removal is positioned at the step of the 3rd part of this patterned photoresist layer and this electrode pattern layer, utilizes dry-etching or Wet-type etching.
9, the method for manufacturing thin-film transistor as claimed in claim 1, wherein this patterned photoresist layer is positive light anti-etching agent or negative type photoresist.
10, the method for manufacturing thin-film transistor as claimed in claim 1, wherein first of this electrode pattern layer partly, partly is electrically insulated with second of this electrode pattern layer.
11, a kind of thin-film transistor comprises:
First metal pattern layer is arranged on the substrate;
The insulating pattern layer is arranged on this first metal figure layer case layer and this substrate of part;
Channel layer is arranged on this insulating pattern layer of part;
Second metal pattern layer is arranged on this channel layer of part and this insulating pattern layer of part, and this second metal pattern layer has first section and second section, and has slit between this first section and this second section;
The protection patterned layer is arranged on this second metal pattern layer of part; And
Electrode pattern layer is arranged on this substrate, and this electrode pattern layer has first partly and second partly, and this first partly is positioned on this protection patterned layer, and this second partly is covered on this first section and this substrate of part of this second metal pattern partly.
12, thin-film transistor as claimed in claim 11, also comprise the ohmic contact patterned layer, be arranged on this channel layer, and has first part and second partly, wherein this first partly and this second have this slit between partly, and this ohmic contact patterned layer this first partly with this second partly respectively with respect to partly this first section and this second section of this second metal pattern layer.
13, thin-film transistor as claimed in claim 12 also comprises the etch-stop patterned layer, be arranged on this channel layer, wherein the part of this ohmic contact patterned layer this first partly and partly this second partly is covered in the both sides of this etch-stop pattern respectively.
14, thin-film transistor as claimed in claim 11 also comprises the etch-stop patterned layer, is arranged on this channel layer, and wherein this first part of the part of this second metal pattern layer and this second part of part cover the partly both sides of this etch stop layer respectively.
15, the method for manufacturing thin-film transistor as claimed in claim 11, wherein first of this electrode pattern layer partly, partly is electrically insulated with second of this electrode pattern layer.
16, a kind of method that forms thin-film transistor comprises:
Form first metal pattern layer on substrate;
Forming insulating barrier is covered on this metal pattern layer and this substrate;
Form channel layer on this insulating barrier of part;
Form second metal pattern layer on this channel layer partly, wherein this second metal pattern layer has first section and second section, and this first section and this second section have slit;
Forming protective layer is covered on this second metal pattern layer;
Form patterned photoresist layer on this protective layer;
Selective removal is protected patterned layer and insulating pattern layer not by this protective layer and this insulating barrier that this patterned photoresist layer covered to form, and exposes this first section of part and this substrate of part of this second metal pattern layer;
Ashing is this patterned photoresist layer partly, so that patterned photoresist layer is formed undercut construction, and expose partly this protection patterned layer; And
Form electrode pattern layer on this substrate; and this patterned photoresist layer of selective removal; and this electrode pattern layer has at least one first part, at least one second part and at least one the 3rd partly; this first part is positioned on this protection patterned layer of part; this second this first section of part that partly is covered in this second metal pattern layer, and partly on this substrate and the 3rd partly cover on this patterned photoresist layer.
17, the method for formation thin-film transistor as claimed in claim 16, also comprise and form the ohmic contact patterned layer on this channel layer, and this ohmic contact patterned layer has first part and second partly, wherein this first partly and this second have this slit between partly, and this ohmic contact patterned layer this first partly with this second partly respectively with respect to partly this first section and this second section of this second metal pattern layer.
18, the method for formation thin-film transistor as claimed in claim 17, also comprise and form the etch-stop patterned layer on this channel layer, wherein the part of this ohmic contact patterned layer this first partly and partly this second partly is covered in the both sides of this etch-stop patterned layer respectively.
19, the method for formation thin-film transistor as claimed in claim 16 also comprises forming etch stop layer on this channel layer, wherein the part of this second metal pattern layer this first partly with these second both sides that partly cover this etch-stop patterned layer respectively.
20, the method for formation thin-film transistor as claimed in claim 16, wherein the partly step of this patterned photoresist layer is somebody's turn to do in this ashing, utilizes isotropic etching to remove partly this patterned photoresist layer.
21, the method for formation thin-film transistor as claimed in claim 16, wherein the employed gas of this isotropic etching is oxygen containing gas.
22, the method for formation thin-film transistor as claimed in claim 16, wherein the partly step of patterned photoresist layer is somebody's turn to do in this ashing, utilizes this patterned photoresist layer of this part of plasma treatment.
23, the method for formation thin-film transistor as claimed in claim 22, wherein this plasma is handled employed gas and is comprised oxygen containing gas.
24, the method for formation thin-film transistor as claimed in claim 16, wherein with this patterned photoresist layer of selective removal and this electrode pattern layer the 3rd partly.
25, the method for formation thin-film transistor as claimed in claim 24, wherein the step of this patterned photoresist layer of this selective removal and this electrode pattern layer is utilized dry-etching or Wet-type etching.
26, the method for formation thin-film transistor as claimed in claim 16, wherein this patterned photoresist layer comprises positive light anti-etching agent or negative type photoresist.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2006101056086A CN100501950C (en) | 2006-07-10 | 2006-07-10 | Thin film transistor and method for manufacturing the same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2006101056086A CN100501950C (en) | 2006-07-10 | 2006-07-10 | Thin film transistor and method for manufacturing the same |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1885512A CN1885512A (en) | 2006-12-27 |
| CN100501950C true CN100501950C (en) | 2009-06-17 |
Family
ID=37583595
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB2006101056086A Expired - Fee Related CN100501950C (en) | 2006-07-10 | 2006-07-10 | Thin film transistor and method for manufacturing the same |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN100501950C (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101572215B (en) * | 2008-04-28 | 2011-04-27 | 财团法人工业技术研究院 | Method for manufacturing patterned metal layer and film transistor |
-
2006
- 2006-07-10 CN CNB2006101056086A patent/CN100501950C/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| CN1885512A (en) | 2006-12-27 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US7935579B2 (en) | Thin film transistor array substrate and method for fabricating the same | |
| KR101637636B1 (en) | Active matrix substrate, method for manufacturing same, and display panel | |
| KR101575750B1 (en) | Thin film transistor array panel and manufacturing method of the same | |
| KR100333274B1 (en) | Liquid Crystal Display and Method Thereof | |
| KR20080012810A (en) | Tft lcd pixel unit and manufacturing method thereof | |
| KR100443804B1 (en) | Active matrix substrate and display device | |
| KR20090044119A (en) | Thin film transistor substrate and method of manufacturing the same | |
| KR20140010361A (en) | Thin film transistor array substrate, method for manufacturing the same, display panel and display device | |
| CN103227148B (en) | A kind of array base palte preparation method and array base palte and display unit | |
| CN102902111B (en) | Method of forming transparent electrode and fabricating array substrate for liquid crystal display device | |
| KR100556349B1 (en) | Method For Fabricating The Array Substrate Of Liquid Crystal Display Device | |
| JP4238960B2 (en) | Thin film transistor manufacturing method | |
| TW437096B (en) | Manufacturing method for thin film transistor | |
| CN103117224A (en) | Manufacturing method of thin film transistor and array substrate | |
| US10879278B2 (en) | Display substrate, manufacturing method therefor, and display device | |
| CN106024705B (en) | The production method of TFT substrate | |
| CN104393020B (en) | A kind of array base palte and preparation method thereof, display device | |
| KR970006733B1 (en) | Thin film transistor manufacturing method | |
| KR100669093B1 (en) | Method of Fabricating Liquid Crystal Display Device | |
| CN100501950C (en) | Thin film transistor and method for manufacturing the same | |
| CN101197332A (en) | Pixel structure manufacturing method | |
| CN101131966B (en) | Pixel structure manufacturing method | |
| CN102097390B (en) | Manufacturing method of pixel structure | |
| CN105304639A (en) | Manufacturing method of thin-film transistor array substrate | |
| CN100368910C (en) | Method for manufacturing pixel structure |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20090617 |