CN100495883C - DC boost converter and its working method - Google Patents
DC boost converter and its working method Download PDFInfo
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- CN100495883C CN100495883C CNB200710019765XA CN200710019765A CN100495883C CN 100495883 C CN100495883 C CN 100495883C CN B200710019765X A CNB200710019765X A CN B200710019765XA CN 200710019765 A CN200710019765 A CN 200710019765A CN 100495883 C CN100495883 C CN 100495883C
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Abstract
The DC voltage increase converter includes enable logic control circuit (ELCC), oscillators, PWM control circuit, voltage drive, NMOS type output tube, and LDNMOS type output tube. Output end of oscillation control of ELCC is connected to the input end of oscillation control of oscillator. PWM controlled output end of PWM control circuit is connected to the input end of oscillation control of oscillator. The output end of oscillation signal of oscillator is connected to the input end of switch signal of the voltage drive. The output end of switch signal of the voltage drive is connected to grid of NMOS type output tube. The grid pole and source pole of LDNMOS type output tube are connected to voltage increase control end, and drain pole is connected to voltage end of electrical source. Features are: easy packaging, high yield, and in favor of prolonging service life of supplying battery.
Description
Technical field
The present invention relates to a kind of DC boost converter and method of work thereof.
Background technology
Traditional metal gate process is not supported Schottky diode.It is low that Schottky diode mainly contains conducting voltage, the characteristics that switching speed is fast; The low conducting voltage here mainly is in order to satisfy the performance index of this product to low input (VIN), switching speed mainly is to improve the response speed of efferent duct switching frequency, response speed is fast more, and the time delay of feedback is just more little, has improved the conversion efficiency of entire circuit; Under the not high condition of frequency of oscillation, can replace Schottky diode fully with low threshold value LDMOSFET.In addition, LDMOSFET is littler than the area of common MOSFET, withstand voltage height; If with low threshold value depletion type MOS FET, be subject to the influence of technology live width, cause area big; Withstand voltage low; So, both reduced product cost with LDMOSFET, improved the rate of finished products of product again.
As Fig. 1, existing DC boost converter comprises diode D, enable logic control circuit 1, oscillator 2, pwm control circuit 3, voltage driver 4 and nmos type efferent duct; Described diode D is low conducting voltage diode or Schottky diode, described enable logic control circuit 1, and oscillator 2, pwm control circuit 3 and voltage driver 4 are formed by the element of supporting metal gate process; The nmos type efferent duct is also for supporting the element of metal gate process; And metal gate process is not supported low conducting voltage diode or Schottky diode, so in actual production process, the component package of its two kinds of technologies is integrated in one, and difficulty is big, cost is high and rate of finished products is low, is unfavorable for industrialization production.
In addition, existing DC boost converter often causes too discharging as the rechargeable battery of power supply, promptly when battery electric quantity deficiency, voltage decline, still continues normal power supply, causes the electric weight of battery to be given out light, and causes shorten greatly its useful life.
Summary of the invention
The technical problem that the present invention solves provides and a kind ofly is easy to encapsulate, cost is lower, rate of finished products is higher and be beneficial to and prolong the supplying cell DC boost converter and the method for work thereof in useful life.
In order to solve the problems of the technologies described above, DC boost converter of the present invention comprises: enable logic control circuit, oscillator, pwm control circuit, voltage driver and nmos type efferent duct; Described enable logic control circuit, oscillator, pwm control circuit and voltage driver have public power voltage terminal; The vibration control output end of enable logic control circuit connects the vibration control input end of oscillator, so that the enable logic control circuit comes the operating frequency of control generator according to the voltage of its enable logic input; The PWM control output end of pwm control circuit links to each other with the PWM control input end of oscillator, carries out the PWM modulation with the oscillator signal that oscillator is produced; The switching signal input of the oscillator signal output termination voltage driver of oscillator, the grid of the switching signal output termination nmos type efferent duct of voltage driver is to control the continuous conducting of nmos type efferent duct according to described oscillator signal through the PWM modulation and to end; The drain electrode of nmos type efferent duct is as boosting control end, the external inductors and the external dc power that are used for external load and are in series, with form at the control end that boosts promote the voltage of driven load; The source electrode of nmos type efferent duct is as earth terminal; Also comprise the LDNMOS type efferent duct that is used for the voltage of the described control end that boosts is delivered to power voltage terminal; The grid of LDNMOS type efferent duct and source electrode connect the described control end that boosts simultaneously, and the drain electrode of LDNMOS type efferent duct connects described power voltage terminal.
In the technique scheme, also comprise the over-discharge protection circuit that is arranged between described enable logic input and the earth terminal; Described external dc power is a rechargeable battery; Over-discharge protection circuit has the mistake that is used to detect described rechargeable battery voltage and puts the protection voltage input end, to control the voltage of described enable logic input.
In the technique scheme, the oscillation signal frequency of oscillator output is not less than 50KHz.
The method of work of above-mentioned DC boost converter comprises the steps:
A, external dc power, are powered to the public power voltage end of enable logic control circuit, oscillator, pwm control circuit and voltage driver through LDNMOS type efferent duct to the control end power supply of boosting simultaneously through external inductors;
B, enable logic control circuit come the operating frequency of control generator according to the voltage of its enable logic input;
The oscillator signal that C, pwm control circuit produce oscillator carries out the PWM modulation;
D, through the oscillator signal of PWM modulation by the voltage driver control continuous conducting of nmos type efferent duct with end;
E, external inductors charge respectively according to the conducting of nmos type efferent duct and cut-off state and discharge; Until the voltage that is enough to drive load in the control end formation of boosting, and lasting this load of driving.
Among the above-mentioned steps B: when the energy logic input terminal was low level, the vibration control output end of enable logic control circuit was a low level; Oscillator begins to generate oscillator signal; When the energy logic input terminal was high level, the enable logic control circuit was output as high level; Oscillator 2 quits work.
In the technique scheme, the mistake of over-discharge protection circuit is put the protection voltage input end and is detected external dc power voltage, when externally DC power supply voltage begins to reduce, the voltage that over-discharge protection circuit is controlled described enable logic input begins to raise, so that the operating frequency of oscillator reduces, and the frequency that reduces the continuous conducting of nmos type efferent duct and end, and reduce to flow through the electric current of external inductors; When externally the output voltage of DC power supply was lower than the predeterminated voltage value, LDNMOS type efferent duct ended, and the nmos type efferent duct is ended, and external inductors stops to discharge and recharge, and promptly external dc power stops discharge.
In the technique scheme, described predeterminated voltage value can be put the resistance value of protecting between voltage input end and the external dc power voltage by adjusting, and was located between 0.6 to 2.7V.
Compared with prior art, the present invention has following good effect: (1) DC boost converter of the present invention substitutes low conducting voltage diode of the prior art or Schottky diode with LDNMOS type efferent duct, thereby make and do not have the element of not supporting metal gate process in the DC boost converter of the present invention, be convenient to adopt the semiconductor aluminum gate process encapsulate integrated, reduced manufacturing cost and improved rate of finished products, be beneficial to industrialization production.(2) in the DC boost converter of the present invention; when externally DC power supply is rechargeable battery; adopted over-discharge protection circuit, deficiency occurred, when voltage begins to descend, reduce to flow through the electric current of external inductors at this battery electric quantity; promptly reduce the external supply current of battery; when externally the output voltage of DC power supply was lower than preset value, external dc power stopped output current, had guaranteed that the electric weight of battery is not given out light; thereby effectively enemy's protection is with regard to battery, has prolonged supplying cell useful life.(3) in the DC boost converter of the present invention, the oscillation signal frequency of oscillator output is 50KHz, and oscillation signal frequency is high more, and the voltage that is used to drive load approaches direct voltage more, and stable more; When load is the LED lamp, can prevent its flicker.(1) DC boost converter of the present invention can be applicable to solar lawn LED lamp, products such as solar LED flashlight.
Description of drawings
Fig. 1 is the circuit block diagram of DC boost converter in the prior art;
Fig. 2 is the circuit block diagram of DC boost converter of the present invention;
Fig. 3 is the circuit theory diagrams of DC boost converter of the present invention;
Fig. 4 is the application circuit schematic diagram of DC boost converter of the present invention.
Embodiment
See Fig. 2, the DC boost converter of present embodiment is for adopting the semiconductor aluminum gate process, and it comprises: enable logic control circuit 1, oscillator 2, pwm control circuit 3, voltage driver 4, over-discharge protection circuit 5, nmos type efferent duct and LDNMOS type efferent duct.
Enable logic control circuit 1, oscillator 2, pwm control circuit 3 and voltage driver 4 have public power voltage terminal VDD.
The vibration control output end of enable logic control circuit 1 connects the vibration control input end of oscillator 2; The PWM control output end of pwm control circuit 3 links to each other with the PWM control input end of oscillator 2; The oscillation signal frequency of oscillator 2 outputs is 300KHz (in other embodiments, can be the value that 50KHz, 100KHz, 200KHz, 400KHz etc. are not less than 50KHz arbitrarily).
The switching signal input of the oscillator signal output termination voltage driver 4 of oscillator 2, the grid of the switching signal output termination nmos type efferent duct of voltage driver 4; The drain electrode of nmos type efferent duct is as boosting control end LX, the external inductors L and the external dc power Vin that are used for external load and are in series, with form at the control end LX that boosts promote the voltage of driven load; The source electrode of nmos type efferent duct is as earth terminal GND; The grid of LDNMOS type efferent duct and source electrode meet the described control end LX that boosts simultaneously, and the drain electrode of LDNMOS type efferent duct meets described power voltage terminal VDD.Over-discharge protection circuit 5 is arranged between described enable logic input EN and the earth terminal GND.Over-discharge protection circuit 5 has the mistake that is used to detect external dc power Vin voltage and puts protection voltage input end G, to control the voltage of described enable logic input EN.Described external dc power Vin is a rechargeable battery.
See Fig. 3, the vibration control output end of enable logic control circuit 1 i.e. 11 and 12 among the figure.The PWM control output end of pwm control circuit 3 i.e. 13 among the figure.The oscillator signal output of oscillator 2 i.e. 14 among the figure.
The method of work of the DC boost converter of present embodiment comprises the steps:
A, external dc power Vin, power through the public power voltage end VDD of LDNMOS type efferent duct to enable logic control circuit 1, oscillator 2, pwm control circuit 3 and voltage driver 4 to the control end LX power supply of boosting simultaneously through external inductors L.
The operating frequency that B, enable logic control circuit 1 come control generator 2 according to the voltage of its enable logic input EN; In this step, when energy logic input terminal EN was low level, the vibration control output end of enable logic control circuit 1 was a low level; Oscillator 2 begins to generate oscillator signal; When energy logic input terminal EN was high level, enable logic control circuit 1 was output as high level; Oscillator 2 quits work.
The oscillator signal that C, 3 pairs of oscillators of pwm control circuit 2 produce carries out the PWM modulation.
D, through the oscillator signal of PWM modulation by the voltage driver 4 control continuous conductings of nmos type efferent duct with end.
E, external inductors L charge respectively according to the conducting of nmos type efferent duct and cut-off state and discharge; Until the voltage that is enough to drive load in the control end LX formation of boosting, and lasting this load of driving.
Therebetween; the mistake of over-discharge protection circuit 5 is put protection voltage input end G and is detected external dc power Vin voltage; when externally the output voltage of DC power supply Vin begins to reduce; the voltage of the described enable logic input EN of over-discharge protection circuit 5 controls begins to raise; the operating frequency of oscillator 2 is reduced; with frequency, and reduce to flow through the electric current of external inductors L by reducing the continuous conducting of nmos type efferent duct and ending.
Put when resistance is zero between protection voltage input end G and the external dc power Vin voltage if cross; externally the output voltage of DC power supply is lower than preset value 0.6V (in other embodiments; this preset value on the resistance value of putting between protection voltage input end G and the external dc power Vin voltage decide) time; LDNMOS type efferent duct ends; the nmos type efferent duct is ended; external inductors stops to discharge and recharge, and promptly external dc power stops discharge.
Application examples 1
See Fig. 4, earth connection behind the electrochemical capacitor C3 that the vdd terminal serial connection filtering of the DC boost converter U1 of embodiment 1 is used; The parallel circuits two ends of being made up of resistance R 3 and photo resistance R2 connect EN end and the vdd terminal of U1 respectively.The GND termination ground wire of U1.Connect the positive pole that external dc power Vin is a rechargeable battery after the LX end tandem electric inductance L of U1 and the switch SW.In parallel behind the positive pole serial connection voltage-stabiliser tube D1 of solar panel with rechargeable battery Vin.Earth connection behind the R terminating resistor R1 of U1.LED light-emitting diode D2 connects the LX end of U1.The G end of resistance R 4 one termination U1, the contact of another termination inductance L and switch SW.Cross the resistance that the resistance of putting between protection voltage input end G and the external dc power Vin voltage is R4.
The LED light-emitting diode can be one, also can be to be in series or many in parallel; And can send Huang, colourama such as green, red or white.
The operation principle of the application circuit of above-mentioned DC boost converter is as follows:
After the switch SW closure, external dc power Vin is that rechargeable battery is powered to the control end LX that boosts through external inductors L, powers through the public power voltage end VDD of LDNMOS type efferent duct to enable logic control circuit 1, oscillator 2, pwm control circuit 3 and voltage driver 4 simultaneously.
When being daytime, photo resistance R2 resistance is less, so the voltage of the vdd terminal of U1 makes the EN end be in high level, thereby the nmos type efferent duct in the U1 is ended, and LED light-emitting diode D2 is not luminous.
When being night, photo resistance R2 resistance is bigger, so after the parallel circuits step-down that the voltage of the vdd terminal of U1 is made up of resistance R 3 and photo resistance R2, deficiency is so that the EN end is in high level, promptly the EN end is in low level; At this moment, U1 begins normally to boost, and promptly external inductors L charges respectively according to the conducting of nmos type efferent duct and cut-off state and discharges; Until the voltage that is enough to driving LED light-emitting diode D2 in the control end LX formation of boosting, and lasting this load of driving.
Therebetween, when the voltage that G end records rechargeable battery Vin by resistance R 4 begins to reduce, the voltage that U1 controls described enable logic input EN raises gradually, the operating frequency of oscillator 2 is reduced, with frequency, and reduce to flow through the electric current of external inductors L by reducing the continuous conducting of nmos type efferent duct and ending; When externally the output voltage of DC power supply Vin was lower than 0.8V (should use-case in resistance R 4=0.6K Ω), LDNMOS type efferent duct ended, and the nmos type efferent duct is ended, and external inductors L stops to discharge and recharge, and LED light-emitting diode D2 extinguishes.
L=68uH, R1=100K, R3=330K, the correspondence table one of described predeterminated voltage value and R4 resistance:
Obviously, the above embodiment of the present invention and application examples only are for example of the present invention clearly is described, and are not to be qualification to the invention process and application mode.For those of ordinary skill in the field, can also make other changes in different forms on the basis of the above description.Here need not also can't give exhaustive to all enforcement and application mode.And these belong to conspicuous variation or the change that spirit of the present invention extended out and still are among protection scope of the present invention.
Table one
Claims (7)
1, a kind of DC boost converter comprises: enable logic control circuit (1), oscillator (2), pwm control circuit (3), voltage driver (4) and nmos type efferent duct;
Described enable logic control circuit (1), oscillator (2), pwm control circuit (3) and voltage driver (4) have public power voltage terminal (VDD);
The vibration control output end of enable logic control circuit (1) connects the vibration control input end of oscillator (2), so that the operating frequency that enable logic control circuit (1) comes control generator (2) according to the voltage of its enable logic input (EN);
The PWM control output end of pwm control circuit (3) links to each other with the PWM control input end of oscillator (2), so that utilize pwm control circuit (3) that the oscillator signal that oscillator (2) produces is modulated;
The switching signal input of the oscillator signal output termination voltage driver (4) of oscillator (2), the grid of the switching signal output termination nmos type efferent duct of voltage driver (4) is so that according to controlling the continuous conducting of nmos type efferent duct through the oscillator signal of PWM modulation and ending;
The drain electrode of nmos type efferent duct is as boosting control end (LX), the external inductors (L) and the external dc power (Vin) that are used for external load and are in series, with promote in the control end that boosts (LX) formation the voltage of driven load; The source electrode of nmos type efferent duct is as earth terminal (GND);
It is characterized in that: also comprise the LDNMOS type efferent duct that is used for the voltage of the described control end that boosts (LX) is delivered to power voltage terminal (VDD); The grid of LDNMOS type efferent duct and source electrode connect the described control end that boosts (LX) simultaneously, and the drain electrode of LDNMOS type efferent duct connects described power voltage terminal (VDD).
2, DC boost converter according to claim 1 is characterized in that: also comprise the over-discharge protection circuit (5) that is arranged between described enable logic input (EN) and the earth terminal (GND); Described external dc power (Vin) is a rechargeable battery; Over-discharge protection circuit (5) has the mistake that is used to detect described rechargeable battery voltage and puts protection voltage input end (G), to control the voltage of described enable logic input (EN).
3, DC boost converter according to claim 1 and 2 is characterized in that: the oscillation signal frequency of oscillator (2) output is not less than 50KHz.
4, as the method for work of DC boost converter as described in the claim 1-3, comprise the steps:
The first step, external dc power (Vin), is powered to the public power voltage end (VDD) of enable logic control circuit (1), oscillator (2), pwm control circuit (3) and voltage driver (4) through LDNMOS type efferent duct to the control end that boosts (LX) power supply simultaneously through external inductors (L);
Second step, the operating frequency that enable logic control circuit (1) comes control generator (2) according to the voltage of its enable logic input (EN);
In the 3rd step, the oscillator signal that pwm control circuit (3) produces oscillator (2) carries out the PWM modulation;
In the 4th step, control the continuous conducting of nmos type efferent duct by voltage driver (4) and end through the oscillator signal of PWM modulation;
In the 5th step, external inductors (L) is charged respectively according to the conducting of nmos type efferent duct and cut-off state and is discharged; Until the voltage that is enough to drive load in the control end that boosts (LX) formation, and lasting the driving charged and discharge; Until the voltage that is enough to drive load in the control end that boosts (LX) formation, and lasting this load of driving.
5, the method for work of DC boost converter according to claim 4 is characterized in that: in second step:
When energy logic input terminal (EN) was low level, the vibration control output end of enable logic control circuit (1) was a low level; Oscillator (2) begins to generate oscillator signal;
When energy logic input terminal (EN) was high level, enable logic control circuit (1) was output as high level; Oscillator (2) quits work.
6, the method for work of DC boost converter according to claim 5, it is characterized in that: the mistake of over-discharge protection circuit (5) is put protection voltage input end (G) and is detected external dc power (Vin) voltage, externally DC power supply (Vin) is when voltage begins to reduce, the voltage of over-discharge protection circuit (5) the described enable logic input of control (EN) begins to raise, so that the operating frequency of oscillator (2) reduces, and the frequency that reduces the continuous conducting of nmos type efferent duct and end, and reduce to flow through the electric current of external inductors (L); When externally the output voltage of DC power supply (Vin) was lower than the predeterminated voltage value, LDNMOS type efferent duct ended, and the nmos type efferent duct is ended, and external inductors (L) stops to discharge and recharge, and promptly external dc power (Vin) stops discharge.
7, the method for work of DC boost converter according to claim 6; it is characterized in that: described predeterminated voltage value can be put the resistance value of protecting between voltage input end (G) and external dc power (Vin) voltage by adjusting, and was located between 0.6 to 2.7V.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB200710019765XA CN100495883C (en) | 2007-02-08 | 2007-02-08 | DC boost converter and its working method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB200710019765XA CN100495883C (en) | 2007-02-08 | 2007-02-08 | DC boost converter and its working method |
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| Publication Number | Publication Date |
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| CN101051791A CN101051791A (en) | 2007-10-10 |
| CN100495883C true CN100495883C (en) | 2009-06-03 |
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| CNB200710019765XA Expired - Fee Related CN100495883C (en) | 2007-02-08 | 2007-02-08 | DC boost converter and its working method |
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Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7911814B2 (en) * | 2008-05-30 | 2011-03-22 | Active-Semi, Inc. | Constant current and voltage controller in a three-pin package with dual-use power pin |
| CN106992697A (en) * | 2017-05-09 | 2017-07-28 | 南阳理工学院 | A kind of improvement device of switch power source of industrial control computer |
| CN108767914A (en) * | 2018-04-28 | 2018-11-06 | 出门问问信息科技有限公司 | A kind of battery powered optimization method, device, storage medium and electronic equipment |
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Owner name: TIANLI SEMICONDUCTOR ( SHENZHEN ) CO., LTD. Free format text: FORMER OWNER: XI AN WANSHI MICROTRONICS A/S Effective date: 20091002 |
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Effective date of registration: 20091002 Address after: Shenzhen city Nanshan District high tech Park high-tech South Road Chinese Technology Development Institute Technology Park Building 3, 7 floor tower Patentee after: Teralane Semiconductor (Shenzhen) Inc. Address before: Room eight, floor 25, innovation building, hi tech Road, Xi'an hi tech Zone, Shaanxi, Patentee before: Wansi Microelectronics Co., Ltd., Xi'an |
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Granted publication date: 20090603 Termination date: 20110208 |