CN100492019C - Probe card electrical contacting device - Google Patents
Probe card electrical contacting device Download PDFInfo
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- CN100492019C CN100492019C CNB2005101134964A CN200510113496A CN100492019C CN 100492019 C CN100492019 C CN 100492019C CN B2005101134964 A CNB2005101134964 A CN B2005101134964A CN 200510113496 A CN200510113496 A CN 200510113496A CN 100492019 C CN100492019 C CN 100492019C
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- probe
- pedestal
- electrical contact
- contact device
- location division
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Abstract
The invention relates to probe card electrical property contact device. It includes one base seat, and at least one probe. The base seat has the surface on which dissolving groove is depressed to form wall surface which is adjacent to the surface and in which at least one location part is set. Each probe includes one the first end and one the second one. Each the first end is set in the location part of the base seat to make each the second end extends towards the dissolving groove.
Description
Technical field
The present invention is relevant with the electrical contact device of probe, is meant the electrical contact device that a kind of structural strength is preferable especially.
Background technology
In the manufacture process of semi-conductor chip, when chip manufacturing finish but do not carry out as yet encapsulation procedure before, usually must be earlier through the circuit function of a trace routine test chip; Trace routine is to utilize the electrical contact device of a probe to be located between tester table and the chip, electrical contact device has some probes, be connected to the weld pad of chip respectively by each probe, the test signal of test machine can be transmitted between chip and the test machine back and forth.
A kind of existing electrical contact device 80, as shown in figure 28, include a pedestal 81, and some probes 82 of being located at pedestal 81, first end 83 of each probe 82 is to weld the surface of being located at pedestal 81 in the mode that engages, second end 84 of probe 82 then extends towards a groove 85 tops of pedestal 81, second end 84 is the weld pads in order to contact chip, by the structure between probe 82 and the pedestal 81, make probe 82 itself have elasticity, when each weld pad of chip pressed on each second end 84, each probe 82 can comparatively positively be connected to each weld pad.
Another kind of for another example known electrical contact device 90, as shown in figure 29, it also includes a pedestal 91 and some probes 92, first end 93 of probe 92 is that direct forming is in pedestal 91 surfaces, and second end 94 is positioned at a groove 95 tops of pedestal 91, use the structure that makes each probe 92 and have elasticity equally, can utilize the weld pad of each second end 94 in order to contact chip.
Yet, because the physical dimension of semi-conductor chip is more and more littler, the weld pad quantity that chip has is more and more, the number of probes that relatively makes electrical contact device to be had in unit area is also more and more, and then make the zone that can be used for mutually combining between probe and the pedestal more and more littler, when carrying out the test job of chip, the junction of probe and pedestal is easy to generate breakoff phenomenon prolonged and repeatedly, cause probe separates in pedestal, the situation that electrical contact device is broken down.
Summary of the invention
Therefore, fundamental purpose of the present invention is the electrical contact device that is to provide a kind of probe, and the structural strength of each probe that it had is preferable, when carrying out test job prolonged and repeatedly, each probe is difficult for producing breakoff phenomenon, makes electrical contact device be difficult for fault.
Take off purpose for before reaching, the electrical contact device of a kind of probe provided by the present invention is characterized in that, includes:
One pedestal, this pedestal has a surface, and one be depressed in this surperficial tank, and this tank is shaped and at least onely is adjacent to this surperficial wall, and is provided with at least one location division in these walls; And
At least one probe, respectively this probe includes one first end and one second end, and respectively this first end is each location division of being located at this pedestal, and making respectively, this second end extends towards this tank.
Wherein this location division is to be depressed in this wall and this end face.
Wherein this pedestal respectively forms at least one protuberance respectively in the side of this location division in correspondence, and respectively first end of this probe then has at least one recess, this probe be with each recess corresponding to each protuberance of this pedestal be embedded at this location division.
Wherein respectively the cross sectional shape of first end of this probe corresponding to the cross sectional shape of this location division respectively.
Wherein this pedestal is in the correspondence side of this location division at least one groove that is shaped respectively, respectively the bearing of trend of this groove is parallel to this end face, respectively this probe periphery then has at least one filler rod, and respectively this probe can utilize respectively this groove of respectively this filler rod embedding, makes that respectively this probe is located at this pedestal.
Wherein respectively the end face of this probe or bottom surface are provided with a protruding wall, and the bearing of trend of this protruding wall is with respectively this filler rod is identical, and this protruding wall is the groove that is embedded at this pedestal.
Wherein the cross sectional shape of this location division is to be irregular, and respectively the cross sectional shape of this probe is then corresponding to the cross sectional shape of this location division.
Wherein this tank is through this pedestal from this end face.
The tank of this pedestal be shaped one first wall and one second wall wherein, this second wall convexedly stretches in this first wall.
Wherein this pedestal has at least one extension in addition, and respectively this extension is that respectively this location division is towards this tank direction extension certainly, and respectively this probe is to be located at respectively this location division and respectively this extension.
Wherein respectively this extension has two mutual sidewalls at interval, and respectively this probe is to be located between this two sidewall.
Wherein respectively this extension is to be located at respectively in this location division, and extends towards this tank direction, and respectively this probe is located at the respectively end face or the bottom surface of this extension.
Wherein respectively the top side of this probe or bottom side are provided with a protruding wall in addition.
This extension and respectively be provided with a conductive part between this location division in addition respectively wherein, respectively this conductive part is in order to as ground connection.
The electrical contact device of a kind of probe of the present invention is characterized in that, includes:
One pedestal, this pedestal has a surface, and one be depressed in this surperficial tank, and this surface is provided with at least one location division, and this location division also is depressed in this surface; And
At least one probe, respectively this probe includes one first end and one second end, and respectively this first end is each location division of being located at this pedestal, and making respectively, this second end extends towards this tank.
Wherein this pedestal respectively forms at least one protuberance respectively in the side of this location division in correspondence, and respectively first end of this probe then has at least one recess, this probe be with each recess corresponding to each protuberance of this pedestal be embedded at this location division.
Wherein respectively the cross sectional shape of first end of this probe corresponding to the cross sectional shape of this location division respectively.
Wherein this pedestal is in the correspondence side of this location division at least one groove that is shaped respectively, respectively the bearing of trend of this groove is parallel to this end face, respectively this probe periphery then has at least one filler rod, and respectively this probe can utilize respectively this groove of respectively this filler rod embedding, makes that respectively this probe is located at this pedestal.
Wherein respectively the end face of this probe or bottom surface are provided with a protruding wall, and the bearing of trend of this protruding wall is with respectively this filler rod is identical, and this protruding wall is the groove that is embedded at this pedestal.
Wherein the cross sectional shape of this location division is to be irregular, and respectively the cross sectional shape of this probe is then corresponding to the cross sectional shape of this location division.
Wherein this tank is through this pedestal from this end face.
The method for making of a kind of electrical contact device of the present invention is characterized in that, includes the following step:
A. prepare a pedestal, this pedestal has an end face and a bottom surface;
B. etch first space that is recess from the end face of this pedestal;
C. implement photoresistance in first space of this pedestal and end face and be shaped and little electroforming processing procedure, make this pedestal be shaped most probes and multilayer sacrifice layer, respectively this probe has one first end and one second end, and this second end has a contact site;
D. etch a tank in the bottom surface of this pedestal, the position of this tank is corresponding to second end below of these probes; And
E. remove respectively this sacrifice layer, can form respectively this probe in this pedestal, respectively first end of this probe is to be located at this pedestal, and respectively second end of this probe then extends towards this tank.
Wherein this pedestal is to utilize silicon material, SOI pedestal, dielectric pedestal, or to have a pedestal of dielectric material made on the surface.
Wherein after this step b, be to lay dielectric material in advance in the surface that this pedestal and this probe respectively mutually combine, making respectively, this probe keeps state of insulation.
Wherein when this steps d, be to utilize one first etch process to etch one first wall from this base top surface, utilize one second etch process to etch one second wall from the bottom surface of this pedestal again, and make this pedestal this tank that is shaped, and this first wall is to convexedly stretch in this second wall.
Wherein the etch process of this step b can also replace by laser processing mode.
Thus, the structure that the present invention can utilize probe and pedestal to mutually combine makes the structural strength of whole electrical contact device preferable, reaches and is carrying out prolonged and repeated test job, each probe is difficult for producing breakoff phenomenon, and electrical contact device is difficult for the purpose of fault.
Description of drawings
Below, conjunction with figs. is enumerated some preferred embodiments, and in order to structure of the present invention and effect are elaborated, wherein used each graphic brief description is as follows, wherein:
Fig. 1 is the stereographic map of the present invention's first preferred embodiment;
Fig. 2 is the cut-open view of 2-2 hatching line among Fig. 1;
Fig. 3 is the method for making synoptic diagram of the present invention's first preferred embodiment;
Fig. 4 is the method for making synoptic diagram of the present invention's first preferred embodiment;
Fig. 5 is the method for making synoptic diagram of the present invention's first preferred embodiment;
Fig. 6 is the method for making synoptic diagram of the present invention's first preferred embodiment;
Fig. 7 is the method for making synoptic diagram of the present invention's first preferred embodiment;
Fig. 8 is the method for making synoptic diagram of the present invention's first preferred embodiment;
Fig. 9 is another enforcement aspect of the present invention's first preferred embodiment;
Figure 10 is the partial cutaway schematic of the present invention's second preferred embodiment, mainly is the state that shows that probe and pedestal mutually combine;
Figure 11 is the partial cutaway schematic of the present invention's the 3rd preferred embodiment, mainly is the state that shows that probe and pedestal mutually combine;
Figure 12 is the partial cutaway schematic of the present invention's the 4th preferred embodiment, mainly is the state that shows that probe and pedestal mutually combine;
Figure 13 is another enforcement aspect of the present invention's the 4th preferred embodiment;
Figure 14 is the another enforcement aspect of the present invention's the 4th preferred embodiment;
Figure 15 is the partial cutaway schematic of the present invention's the 5th preferred embodiment, mainly is the state that shows that probe and pedestal mutually combine;
Figure 16 is the partial cutaway schematic of the present invention's the 6th preferred embodiment, mainly is the state that shows that probe and pedestal mutually combine;
Figure 17 is another enforcement aspect of the present invention's the 6th preferred embodiment;
Figure 18 is the partial perspective view of the present invention's the 7th preferred embodiment;
19 figure are cut-open views of 19-19 hatching line among Figure 18;
Figure 20 is the partial perspective view of the present invention's the 8th preferred embodiment;
Figure 21 is the cut-open view of 21-21 hatching line among Figure 20;
Figure 22 is that aspect is implemented in one of the present invention's the 8th preferred embodiment;
Figure 23 is another enforcement aspect of the present invention's the 8th preferred embodiment;
Figure 24 is the partial perspective view of the present invention's the 9th preferred embodiment;
Figure 25 is the cut-open view of 25-25 hatching line among Figure 24;
Figure 26 is the partial perspective view of the present invention's the tenth preferred embodiment;
Figure 27 is the cut-open view of 27-27 hatching line among Figure 26.
Figure 28 is the synoptic diagram for an existing electrical contact device; And
Figure 29 is the synoptic diagram for another existing electrical contact device.
Embodiment
Seeing also Figure 1 and Figure 2, is the electrical contact device 10 for the present invention's first probe that preferred embodiment provides, and electrical contact device 10 includes a pedestal 20 and most probe 30; Pedestal 20 is to make with silicon, pedestal 20 has an end face 21, and end face 21 central authorities have a tank 22 that is recess, and tank 22 neighbours that are shaped are connected to the wall 23 of end face 21, two relative walls 23 are arranged with most location divisions 24, and each location division 24 is to be depressed in each wall 23 and end face 21; Be provided with multi-conducting circuit 25 in the pedestal 20 in addition.
Respectively this probe 30 is for utilizing the made body of rod of conductive material, each probe 30 has one first end 31 and one second end 32, the cross sectional shape of first end 31 generally is same as the cross sectional shape of the location division 24 of pedestal 20, second end 32 has the contact site 33 that without exception is vertical configuration, first end 31 of each probe 30 is that build-in is in each location division 24, probe 30 flushes mutually with end face 21, and with conducting wire 25 mutual electrical communication, and each second end 32 extends towards tank 22, and each contact site 33 is towards the top of end face 21.
To shown in Figure 8, is to be the manufacture method of the electrical contact device 10 of a preferred embodiment of the present invention as Fig. 3, and it includes the following step:
Step 1: as shown in Figure 3, preparing a material is the pedestal 20 of silicon, makes pedestal 20 have an end face 21 and a bottom surface 26.
Step 2: as shown in Figure 4, with the etching or the mode of Laser Processing, from the end face 21 of pedestal 20 first space 27 that is recess that is shaped.
Step 3: extremely shown in Figure 6 as Fig. 5, implementing photoresistance in first space 27 of pedestal 20 with end face 21 is shaped and little electroforming processing procedure, make pedestal 20 be shaped most probes 30 and multilayer sacrifice layer 28, each probe 30 has one first end 31 and one second end, 32, the second ends 32 have a contact site 33; If wish the gauge of more accurate control probe 30, can behind little electroforming processing procedure,, make probe 30 surfaces be planarization and be ground to desirable thickness further with precise finiss probe 30 surfaces.
Step 4: as shown in Figure 7, utilization waits tropism's dry ecthing or the wet etching mode etches a tank 22 from the bottom surface 26 of pedestal 20, and the position of tank 22 is corresponding to second end, 32 belows of probe 30.
Step 5: as shown in Figure 8, remove each sacrifice layer 28, can form the structure of each probe 30 in pedestal 20, first end 31 of each probe 30 is to be located at pedestal 20, and 32 at second end of probe 30 extends towards tank 22.
As Fig. 7 and shown in Figure 8, because when the bottom surface 30 of pedestal 20 etches tank 22, the opening size of tank 22 is wayward, if after removing sacrifice layer 28, the distance that each probe 30 is suspended on tank 22 walls 23 is neither identical, will directly have influence on the consistance of impedance of elasticity, rigidity and the probe 30 of each probe 30; For can be more or less freely and accurately control the length that each probe 30 convexedly stretches in tank 22, make the length unanimity of each probe 30 elastically deformable, and then the consistance of the contact impedance of lifting probe 30, as shown in Figure 9, can make tank 22 ' form first wall 36 ' of an opening size greater than probe 30 ' the unsettled scope, probe 30 ' will be fixed by the sidewall clamping of location division 24 ' this moment, and probe 30 ' to be suspended on the length of tank 22 ' be from the beginning of one second wall 37 ', because the dimensional accuracy when making location division 24 ' is consistent with the precision of probe 30 ', so can relatively easily control the length that each probe 30 ' convexedly stretches in tank 22 '.
Explanation via said structure and method for making, when electrical contact device 10 is applied to a probe (not shown), the contact site 33 of each probe 30 is each weld pad that is connected to a chip, the strength that chip pressed down can promote second end 32 of each probe 30, second end 32 of each probe 30 is moved towards tank 22 directions, probe 30 body portions then are bending, by first end, 31 build-ins of each probe 30 in each location division 24 of pedestal 20, each probe 30 can have predetermined elasticity, can be positively between each weld pad of chip and each probe 30 butt mutually; Simultaneously, utilize location division 24 to be incorporated into the structure of probe 30, probe 30 and pedestal 20 contact area have each other been increased, and the position that can meet with stresses, each probe 30 through for a long time and repeatedly with the mutual butt of each weld pad after, each first end 31 still can firmly mutually combine with each location division 24, and then the situation that probe 30 and pedestal 20 are separated from each other takes place.
Thus, the present invention can utilize probe and pedestal structure each other, makes the structural strength of whole electrical contact device preferable, reaches and is carrying out prolonged and repeated test job, each probe is difficult for producing breakoff phenomenon, and electrical contact device is difficult for the purpose of fault.
On take off the structure that location division among the embodiment and each probe mutually combine, also can change other shape into, can reach purpose of the present invention equally; As shown in figure 10, it is the electrical contact device 40 that is provided for the present invention's second preferred embodiment, it is identical with first preferred embodiment that it mainly forms member, characteristics are: the two side faces of pedestal 41 in each location division 42 has a protuberance 43 respectively, each protuberance 43 is to be convex, first end, 45 2 outer peripheral faces of each probe 44 then have a recess 46 respectively, each probe 44 is to be embedded at location division 42 with each recess 46 corresponding to the mode of each protuberance 43 of pedestal 41, and probe 44 and pedestal 41 are mutually combined.
As shown in figure 11, it is the electrical contact device 50 that is provided for the present invention's the 3rd preferred embodiment, its characteristics are: the two side faces 56 of pedestal 51 in each location division 52 is to extend internally from wall 53 respectively with being the flaring shape, the cross sectional shape of first end 55 of each probe 54 is then corresponding to the cross sectional shape of location division 52, make first end 55 of probe 54 embed location division 52, and the body portion of probe 54 is extended laterally from wall 53 along two side faces 56.
As shown in figure 12, it is the electrical contact device 60 that is provided for the present invention's the 4th preferred embodiment, its characteristics are: 62 two side faces is formed separately out most grooves 63 to pedestal 61 in the location division, the bearing of trend summary of each groove 63 is parallel to end face 64, each probe 65 periphery then has most filler rods 66, each probe 65 can utilize each filler rod 66 to embed the mode of each groove 63, makes probe 65 be located at the location division 62 of pedestal 61; Figure 13 and shown in Figure 14 for another example, a protruding wall 67 ' all can be set up in the end face of probe 65 ' or bottom surface, and probe 65 ' embeds the location division 62 ' of pedestal 61 ', can increase the bond strength between probe 65 ' and the pedestal 61 ' again; And after the protruding wall 67 ' of probe 65 ' bottom surface can form the external form space of protruding wall 67 ' in the isotropic etching mode earlier, be shaped in the electroforming mode again, the protruding wall 67 ' of end face then can utilize photoresistance to be shaped and little electroforming processing procedure storehouse is shaped.
For another shown in Figure 15, it is the electrical contact device 66 that is provided for the present invention's the 5th preferred embodiment, characteristics are that the cross sectional shape of location division 67 is to be irregularly shaped, the cross sectional shape of probe 68 is then corresponding to the cross sectional shape of location division 67, thus, probe 68 still can mutually combine (only the irregularly shaped difference each other of each probe can not be excessive, is principle not influence electrical specification) with pedestal 69.
Again as shown in figure 16, it is the electrical contact device 70 that is provided for the present invention's the 6th preferred embodiment, characteristics are that first end 72 of each probe 71 has a fitting portion 73 that is vertical configuration, each location division 74 then is to be depressed in end face 75, fitting portion 73 build-ins of each probe 71 can make probe 71 be incorporated into pedestal 76 in each location division 74; And similarly, as shown in figure 17, the cross sectional shape of the fitting portion 73 ' of probe 71 ' also can change into and generally be ladder type, and the cross sectional shape of location division 74 ' generally is same as the cross sectional shape of fitting portion 73 ', also can make probe 71 ' and pedestal 76 ' chimeric mutually.In each probe structure provided by the present invention, owing to be to utilize contact site to be engaged in each weld pad of chip, dimensional accuracy at whole probe is in the allowable range, can equally on a substrate in addition independently produce needle tip with little electroforming processing procedure, needle tip and contact site are interconnected, its electroforming mode can be die casting, with the graphical opening of photoresistance as mould electrotyping process in addition, the opening that etches the needle point kenel on substrate is electrotyping process in addition, or utilize the chemical etching mode, precision optical machinery processing, Laser Processing, electrodischarge machining or the like processing mode makes the contact site top be pointed.
In order to increase the bonding area of each probe and pedestal, and the structural strength of probe, as Figure 18 and shown in Figure 19, it is electrical contact device 400 for the present invention's the 7th probe that preferred embodiment provides, its structure includes a pedestal 402 and at least one probe 403 equally, characteristics are: pedestal 402 has at least one extension 404 in addition, each extension 404 is the walls 405 that are integrally formed in pedestal 402 with etching mode, each extension 404 has two mutual sidewalls 406 at interval, and extend towards tank 408 directions from each location division 407,403 of each probes are located between each location division 407 and two sidewalls 406 with little electroforming processing procedure, to increase the bonded area of probe 403 and pedestal 402, simultaneously, utilize the material-structure of extension 404, probe 403 structures that integral body is suspended on the tank 408 are stronger; And if pedestal 402 then should be established a dielectric layer (as silicon dioxide) when making for nonisulated body material between probe 403 and pedestal 402, the extension 404, with so that probe 403 electrically isolates from pedestal 402.
Figure 20 and shown in Figure 21 for another example, it is the electrical contact device 500 of the present invention's the 8th preferred embodiment, its structure and the 7th preferred embodiment are roughly the same, characteristics are: extension 501 is to be self-align 502 on strip ground to extend towards tank 503 directions, 504 electroforming of probe are in the end face and the bottom surface of extension 501, the top side of each probe 504 and bottom side are respectively equipped with a convex palisade part 505 in addition, can increase the structural strength of probe 504 equally; And as Figure 22 and shown in Figure 23, the protruding wall 505 of each probe 504 also can only be located at the top side or the bottom side of probe 504.
For another Figure 24 and shown in Figure 25, it is electrical contact device 600 for the present invention's the 9th preferred embodiment, its structure and the 7th preferred embodiment are roughly the same, and characteristics are: extension 601 is that 604 end faces of being located at extension 601 of probe are extended towards tank 603 in self-align 602 bottom side.
As Figure 26 and shown in Figure 27, it is electrical contact device 700 for the present invention's the tenth preferred embodiment, its structure and the 7th preferred embodiment are roughly the same, probe 701 is 703 of two sidewalls being located at extension 702, characteristics then are: be provided with a conductive part 705 between two sidewalls, 703 peripheries and the location division 704 in addition, thus, except probe 701 can be used for transmission signals, 705 purposes that can be used as ground connection of conductive part, noise insulation, increase signal transmitting bandwidth thus.
Claims (26)
1. the electrical contact device of a probe is characterized in that, includes:
One pedestal, this pedestal has a surface, and one be depressed in this surperficial tank, and this tank is shaped and at least onely is adjacent to this surperficial wall, and is provided with at least one location division in these walls; And
At least one probe, respectively this probe includes one first end and one second end, and respectively this first end is each location division of being located at this pedestal, and making respectively, this second end extends towards this tank.
2. according to the electrical contact device of the described probe of claim 1, it is characterized in that wherein this location division is to be depressed in this wall and this end face.
3. according to the electrical contact device of the described probe of claim 2, it is characterized in that, wherein this pedestal respectively forms at least one protuberance respectively in the side of this location division in correspondence, respectively first end of this probe then has at least one recess, this probe be with each recess corresponding to each protuberance of this pedestal be embedded at this location division.
4. according to the electrical contact device of the described probe of claim 2, it is characterized in that, wherein respectively the cross sectional shape of first end of this probe corresponding to the cross sectional shape of this location division respectively.
5. according to the electrical contact device of the described probe of claim 2, it is characterized in that, wherein this pedestal is in the correspondence side of this location division at least one groove that is shaped respectively, respectively the bearing of trend of this groove is parallel to this end face, respectively this probe periphery then has at least one filler rod, respectively this probe can utilize respectively this groove of respectively this filler rod embedding, makes that respectively this probe is located at this pedestal.
6. according to the electrical contact device of the described probe of claim 5, it is characterized in that wherein respectively the end face of this probe or bottom surface are provided with a protruding wall, the bearing of trend of this protruding wall is with respectively this filler rod is identical, and this protruding wall is embedded at the groove of this pedestal.
7. according to the electrical contact device of the described probe of claim 2, it is characterized in that wherein the cross sectional shape of this location division is to be irregular, respectively the cross sectional shape of this probe is then corresponding to the cross sectional shape of this location division.
8. according to the electrical contact device of the described probe of claim 1, it is characterized in that wherein this tank is through this pedestal from this end face.
9. according to the electrical contact device of the described probe of claim 1, it is characterized in that, the tank of this pedestal be shaped one first wall and one second wall wherein, this second wall convexedly stretches in this first wall.
10. according to the electrical contact device of the described probe of claim 1, it is characterized in that, wherein this pedestal has at least one extension in addition, and respectively this extension is that respectively this location division is towards this tank direction extension certainly, and respectively this probe is to be located at respectively this location division and respectively this extension.
11. the electrical contact device according to the described probe of claim 10 is characterized in that, wherein respectively this extension has two mutual sidewalls at interval, and respectively this probe is to be located between this two sidewall.
12. the electrical contact device according to the described probe of claim 10 is characterized in that, wherein respectively this extension is to be located at respectively in this location division, and extends towards this tank direction, and respectively this probe is located at the respectively end face or the bottom surface of this extension.
13. the electrical contact device according to the described probe of claim 12 is characterized in that, wherein respectively the top side of this probe or bottom side are provided with a protruding wall in addition.
14. the electrical contact device according to the described probe of claim 10 is characterized in that, this extension and respectively be provided with a conductive part between this location division in addition respectively wherein, and respectively this conductive part is in order to as ground connection.
15. the electrical contact device of a probe is characterized in that, includes:
One pedestal, this pedestal has a surface, and one be depressed in this surperficial tank, and this surface is provided with at least one location division, and this location division also is depressed in this surface; And
At least one probe, respectively this probe includes one first end and one second end, and respectively this first end is each location division of being located at this pedestal, and making respectively, this second end extends towards this tank.
16. electrical contact device according to the described probe of claim 15, it is characterized in that, wherein this pedestal respectively forms at least one protuberance respectively in the side of this location division in correspondence, respectively first end of this probe then has at least one recess, this probe be with each recess corresponding to each protuberance of this pedestal be embedded at this location division.
17. the electrical contact device according to the described probe of claim 15 is characterized in that, wherein respectively the cross sectional shape of first end of this probe corresponding to the cross sectional shape of this location division respectively.
18. electrical contact device according to the described probe of claim 15, it is characterized in that, wherein this pedestal is in the correspondence side of this location division at least one groove that is shaped respectively, respectively the bearing of trend of this groove is parallel to this end face, respectively this probe periphery then has at least one filler rod, respectively this probe can utilize respectively this groove of respectively this filler rod embedding, makes that respectively this probe is located at this pedestal.
19. the electrical contact device according to the described probe of claim 18 is characterized in that, wherein respectively the end face of this probe or bottom surface are provided with a protruding wall, and the bearing of trend of this protruding wall is with respectively this filler rod is identical, and this protruding wall is the groove that is embedded at this pedestal.
20. the electrical contact device according to the described probe of claim 15 is characterized in that, wherein the cross sectional shape of this location division is to be irregular, and respectively the cross sectional shape of this probe is then corresponding to the cross sectional shape of this location division.
21. the electrical contact device according to the described probe of claim 15 is characterized in that, wherein this tank is through this pedestal from this end face.
22. the method for making of an electrical contact device is characterized in that, includes the following step:
A. prepare a pedestal, this pedestal has an end face and a bottom surface;
B. etch first space that is recess from the end face of this pedestal;
C. implement photoresistance in first space of this pedestal and end face and be shaped and little electroforming processing procedure, make this pedestal be shaped most probes and multilayer sacrifice layer, respectively this probe has one first end and one second end, and this second end has a contact site;
D. etch a tank in the bottom surface of this pedestal, the position of this tank is corresponding to second end below of these probes; And
E. remove respectively this sacrifice layer, can form respectively this probe in this pedestal, respectively first end of this probe is to be located at this pedestal, and respectively second end of this probe then extends towards this tank.
23. the method for making according to the described electrical contact device of claim 22 is characterized in that, wherein this pedestal is to utilize silicon material, SOI pedestal, dielectric pedestal, or to have a pedestal of dielectric material made on the surface.
24. the method for making according to the described electrical contact device of claim 22 is characterized in that, wherein after this step b, is to lay dielectric material in advance in the surface that this pedestal and this probe respectively mutually combine, making respectively, this probe keeps state of insulation.
25. method for making according to the described electrical contact device of claim 22, it is characterized in that, wherein when this steps d, be to utilize one first etch process to etch one first wall from this base bottom surface, utilize one second etch process to etch one second wall again from the end face of this pedestal, and make this pedestal this tank that is shaped, and this second wall convexedly stretches in this first wall, and second end of this probe is to begin from this second wall.
26. the method for making according to the described electrical contact device of claim 22 is characterized in that, wherein the etch process of this step b can also replace by laser processing mode.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2005101134964A CN100492019C (en) | 2005-10-14 | 2005-10-14 | Probe card electrical contacting device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2005101134964A CN100492019C (en) | 2005-10-14 | 2005-10-14 | Probe card electrical contacting device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1948971A CN1948971A (en) | 2007-04-18 |
| CN100492019C true CN100492019C (en) | 2009-05-27 |
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| CNB2005101134964A Expired - Fee Related CN100492019C (en) | 2005-10-14 | 2005-10-14 | Probe card electrical contacting device |
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| CN (1) | CN100492019C (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN101311733B (en) * | 2007-05-24 | 2012-11-14 | 旺矽科技股份有限公司 | Electrical contact device manufacture method |
| TWI667728B (en) * | 2017-10-30 | 2019-08-01 | Industrial Technology Research Institute | Chip bonding apparatus, chip bonding method and a chip package structure |
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2005
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| Publication number | Publication date |
|---|---|
| CN1948971A (en) | 2007-04-18 |
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