CN100487903C - Cmos图像传感器及其制造方法 - Google Patents

Cmos图像传感器及其制造方法 Download PDF

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CN100487903C
CN100487903C CNB2005101320366A CN200510132036A CN100487903C CN 100487903 C CN100487903 C CN 100487903C CN B2005101320366 A CNB2005101320366 A CN B2005101320366A CN 200510132036 A CN200510132036 A CN 200510132036A CN 100487903 C CN100487903 C CN 100487903C
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黄�俊
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Abstract

一种用于制造CMOS图像传感器的方法包括：在具有像素阵列区和外围电路区的半导体基片上形成光电二极管区，栅电极，层间电介质层，金属线，以及钝化层；在像素阵列区的钝化层上形成具有用于进行滤色的多个滤光器元件的滤色器层；在滤色器层上形成光遮蔽层；平坦化光遮蔽层，直到滤色器层的表面被暴露；以及在光遮蔽层上形成微透镜。

Description

CMOS图像传感器及其制造方法
相关申请的交叉参考
本申请要求2004年12月29日所提交的韩国专利申请No.10-2004-0114842的权益，其在此全部引入作为参考。
技术领域
本发明涉及一种CMOS图像传感器，更具体地，涉及一种具有光遮蔽层的CMOS图像传感器及其制造方法，其中，所述光遮蔽层在像素区的相应滤色器彼此接合的区以及外围电路区上形成以改进颜色再现。
背景技术
通常，图像传感器是将光学图像转换成电信号的半导体器件。图像传感器被分类为电荷耦合器件(CCD)和互补MOS(CMOS)图像传感器。在CCD中，多个金属-氧化物-金属(MOS)电容器被彼此靠近地排列以传递和存储电荷载流子。在CMOS图像传感器中，对应于像素数目的多个MOS晶体管通过使用作为外围电路的控制电路和信号处理电路的CMOS技术来制造。用于使用MOS晶体管来逐步检测输出的开关系统被采用。
CMOS图像传感器包括具有光电二极管的信号处理芯片。由于放大器，模拟/数字(A/D)转换器，内部电压发生器，时序发生器，数字逻辑，以及其它部件可被集成在每个芯片上，所以CMOS图像传感器可具有较高的集成度。而且，CMOS图像传感器也可具有有利的功耗和成本减小。通过比CCD便宜的硅晶片的蚀刻过程使能大规模生产CMOS图像传感器，因为CCD是通过专门过程来制造的。
图1图示出常规CMOS图像传感器中的像素区的滤色器阵列。
如图1所示，绿滤色器10，蓝滤色器11和红滤色器12被重复排列。滤色器是使用负性光刻胶来形成的。图案空隙13在相应滤色器彼此接合的区中产生。例如，图案空隙13在两个绿滤色器10，蓝滤色器11和红滤色器12彼此接合的区中产生。图案空隙13产生噪声信号，因为入射光进入空隙而不通过滤色器。
图2为图示出常规CMOS图像传感器的截面视图。
如图2所示，可包括光电二极管区，栅电极，层间电介质层和金属线的元件层17在具有像素阵列区14和外围电路区15的半导体基片16上形成。钝化层18在元件层17上被沉积。蓝滤色器图案11，红滤色器图案12和绿滤色器图案10在像素阵列区14的钝化层18上依次被沉积。具有一透射比的上涂覆层(overcoating layer)19在蓝滤色器图案11，红滤色器图案12和绿滤色器图案10上形成。然后外围电路区15的上涂覆层19被移除。微透镜图案20在上涂覆层19上形成。
在上面讨论的所制造的CMOS图像传感器中，红，绿和蓝色通过像素阵列区中的滤色器被选择性地过滤，使得光能量被传递到光电二极管区。然而，传递到外围电路区的光能量不通过滤色器来过滤，由此在模拟电路区中产生不必要的电子-空穴对，并因此产生大量的噪声。而且，在像素阵列区中，由于相应滤色器彼此接合的区中的空隙，光被导向光电二极管而不通过滤色器，由此产生噪声。这使颜色再现恶化。
发明内容
因此，本发明被指向一种CMOS图像传感器的光遮蔽层及其制造方法，其基本上消除了可由于相关技术的局限和缺点而导致的一个或多个问题。
本发明可提供一种CMOS图像传感器及其制造方法，其中，光遮蔽层在像素区的相应滤色器彼此接合的区以及外围电路区上形成，以避免不必要的入射光并降低噪声。
本发明另外的优点和特征一部分将在下面的描述中阐明，一部分在对以下的研究时对于本领域的技术人员将是显而易见的。本发明的这些和其它优点可以通过书面描述及其权利要求以及附图中特别指出的结构来实现和获得。
根据本发明的一个方面的CMOS图像传感器包括：半导体基片，其被提供有光电二极管区，栅电极，层间电介质层和金属线，并由像素阵列区和外围电路区来限定；滤色器层，其在所述半导体基片上形成，所述滤色器具有用于进行滤色的多个滤光器元件；光遮蔽层，其在相应滤光器元件彼此接合的区以及外围电路区上形成；以及微透镜，其在像素区的光遮蔽层上形成。
滤光器元件中的四个相邻滤光器元件彼此接合的区可填充有光遮蔽层。
所述光遮蔽层可由黑材料来形成。
在本发明的另一个方面中，用于制造CMOS图像传感器的方法可包括：在具有像素阵列区和外围电路区的半导体基片上形成光电二极管区，栅电极，层间电介质层，金属线，以及钝化层；在像素阵列区的钝化层上形成具有用于进行滤色的多个滤光器元件的滤色器层；在滤色器层和外围电路区的钝化层上形成光遮蔽层；平坦化光遮蔽层，直到滤色器层的表面被暴露；以及在光遮蔽层上形成微透镜。
滤光器元件中的四个相邻滤光器元件彼此接合的区可填充有光遮蔽层。
所述光遮蔽层可由黑材料形成。
在本发明的另一个方面中，用于制造CMOS图像传感器的方法可包括：在具有像素阵列区和外围电路区的半导体基片上形成光电二极管区，栅电极，层间电介质层，金属线，以及钝化层；在像素阵列区的钝化层上形成具有用于进行滤色的多个滤光器元件的滤色器层；在包括滤色器层的钝化层和外围电路区的钝化层上形成光遮蔽层；平坦化光遮蔽层，直到滤色器层的表面被暴露；以及在光遮蔽层上形成微透镜。
滤光器元件中的四个相邻滤光器元件彼此接合的区可填充有光遮蔽层，并且光遮蔽层保留在外围电路区中。
所述光遮蔽层可由黑材料形成。
应当理解，本发明的以上概括描述和以下详细描述都是示例性的和说明性的，并且旨在提供如所要求的本发明的进一步说明。
附图说明
被包括以提供对本发明的进一步理解的附图图示本发明的实施例并连同说明书用来说明本发明的原理。在图中：
图1图示出常规CMOS图像传感器中的像素区的滤色器阵列。
图2为图示出常规CMOS图像传感器的截面视图。
图3-5为图示出根据本发明的一个示例性实施例来制造CMOS图像传感器的方法的截面图；以及
图6图示出根据本发明的CMOS图像传感器中的像素区的滤色器阵列。
具体实施方式
现在将详细参考本发明的示例性实施例，其实例在附图中图示。在任何可能的情况下，相同的参考标号将在附图中始终用于指示相同或相似的部分。
图3到图5为图示出根据本发明的一个示例性实施例来制造CMOS图像传感器的方法的截面图。
如图3所示，包括诸如光电二极管区，栅电极，层间电介质层和金属线的元件的元件层103在具有像素阵列区100和外围电路区101的半导体基片102上形成。钝化层104在元件层103上被沉积。蓝滤色器105，绿滤色器106和红滤色器107在像素阵列区100的钝化层104上依次被沉积。
光遮蔽层108在像素阵列区100的蓝滤色器105，绿滤色器106和红滤色器107以及外围电路区101上形成。光遮蔽层可由黑材料来形成。
如图4所示，光遮蔽层108通过化学机械抛光(CMP)过程或回蚀(etchback)过程加以蚀刻，直到蓝滤色器105，绿滤色器106和红滤色器107的表面被暴露。
参考图4，在图3的光遮蔽层108被蚀刻之后，像素阵列区100中四个相邻滤色器彼此接合的区中的空隙109(如图6所示)被填充了光遮蔽层108。光电二极管区上的入射光将只通过滤色器，这将减少或消除噪声。
如图3所示，因为光遮蔽层180在像素阵列区和外围电路区上形成，所以光遮蔽层108遮蔽了外围电路区101上的入射光。
最后，如图5所示，微透镜110直接在光遮蔽层108上形成，这与在上涂覆层上形成微透镜110的常规器件不同。
在上面的实施例中，光遮蔽层在像素阵列区和外围电路区两者中的钝化层上形成。可替换地，光遮蔽层可在像素阵列区上形成但不在外围电路区上形成。特别地，光遮蔽层可仅在像素阵列区中的滤色器上形成。
由于像素阵列区中四个滤色器彼此接合的区中的空隙被填充了光遮蔽层，并且光遮蔽层在外围电路区上形成，本发明可以减少由不必要的入射光引起的噪声并且改进颜色再现。
另外，由于光遮蔽层被平坦化而使在微透镜形成之前不需要形成上涂覆层，本发明可以简化过程步骤。
对于本领域的技术人员明显的是，可在本发明的精神或范围内对本发明做出各种修改和变化。因此，旨在使本发明涵盖属于所附权利要求和及其等价物范围内的本发明的修改和变化。

Claims (9)

1.一种CMOS图像传感器，包括：
半导体基片，其被提供有光电二极管区，栅电极，层间电介质层，以及金属线，其中所述半导体基片具有像素阵列区和外围电路区；
滤色器层，其形成于所述半导体基片上，该滤色器层具有用于进行滤色的多个滤光器元件并且以恒定间隔形成于半导体基片上；
光遮蔽层，其形成于相应滤光器元件彼此接合的区以及外围电路区上；以及
至少一个微透镜，其形成于像素区的光遮蔽层上。
2.如权利要求1所述的CMOS图像传感器，其中四个相邻滤光器元件彼此接合的区被填充有光遮蔽层。
3.如权利要求1所述的CMOS图像传感器，其中所述光遮蔽层由黑材料形成。
4.一种用于形成CMOS图像传感器的光遮蔽层的方法，包括：
在具有像素阵列区和外围电路区的半导体基片上形成光电二极管区，栅电极，层间电介质层，金属线，以及钝化层；
在像素阵列区的钝化层上形成具有用于进行滤色的多个滤光器元件的滤色器层；
在滤色器层和外围电路区的钝化层上形成光遮蔽层；
平坦化光遮蔽层，直到滤色器层的至少一个表面被暴露；以及
在光遮蔽层上形成至少一个微透镜。
5.如权利要求4所述的方法，其中四个相邻滤光器元件彼此接合的区被填充有光遮蔽层。
6.如权利要求4所述的方法，其中光遮蔽层由黑材料形成。
7.一种用于形成CMOS图像传感器的光遮蔽层的方法，包括：
在具有像素阵列区和外围电路区的半导体基片上形成光电二极管区，栅电极，层间电介质层，金属线，以及钝化层；
在像素阵列区的钝化层上形成具有用于进行滤色的多个滤光器元件的滤色器层；
在包括滤色器层的钝化层和外围电路区的钝化层上形成光遮蔽层；
平坦化光遮蔽层，直到滤色器层的至少一个表面被暴露；以及
在光遮蔽层上形成至少一个微透镜。
8.如权利要求7所述的方法，其中四个相邻滤光器元件彼此接合的区被填充有光遮蔽层，并且光遮蔽层保留在外围电路区中。
9.如权利要求7所述的方法，其中所述光遮蔽层由黑材料形成。
CNB2005101320366A 2004-12-29 2005-12-16 Cmos图像传感器及其制造方法 Expired - Fee Related CN100487903C (zh)

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KR1020040114842 2004-12-29
KR1020040114842A KR20060076430A (ko) 2004-12-29 2004-12-29 시모스 이미지 센서의 광차폐막 및 그의 형성방법

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