CN100487891C - Making method for semiconductor part and semiconductor tube core - Google Patents
Making method for semiconductor part and semiconductor tube core Download PDFInfo
- Publication number
- CN100487891C CN100487891C CNB2007101424129A CN200710142412A CN100487891C CN 100487891 C CN100487891 C CN 100487891C CN B2007101424129 A CNB2007101424129 A CN B2007101424129A CN 200710142412 A CN200710142412 A CN 200710142412A CN 100487891 C CN100487891 C CN 100487891C
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- color
- semiconductor device
- coating
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/544—Marks applied to semiconductor devices or parts, e.g. registration marks, alignment structures, wafer maps
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
- H01L2223/544—Marks applied to semiconductor devices or parts
- H01L2223/54406—Marks applied to semiconductor devices or parts comprising alphanumeric information
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
- H01L2223/544—Marks applied to semiconductor devices or parts
- H01L2223/54473—Marks applied to semiconductor devices or parts for use after dicing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01004—Beryllium [Be]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01078—Platinum [Pt]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01079—Gold [Au]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1204—Optical Diode
- H01L2924/12044—OLED
Abstract
The invention is concerned with the semiconductor device (-), includes: the semiconductor die (-) of the first surface (-) that is used to form the electronic circuit; the coating (-) forming on the second surface (-) of the semiconductor die that forms the contrast color with the semiconductor die; the coating is patterning in order to exposure part of the second surface that can display the information about the semiconductor device. The invention can introduce the radiation (-) such as laser in order to select the cleaning material selectively from the coating, the coating is patterning.
Description
The application is that application number is 02827568.3, denomination of invention is divided an application for the Chinese patent application of " semiconductor device and produce the method for high contrast distinguishing mark ".
Technical field
Present invention generally relates to semiconductor device, relate to more precisely the semiconductor device that is graphically provided about the back coating of semi-conductive information is provided.
Background technology
Electronic system is made manufacturing firm and is constantly required to reduce expensive integrated circuit and other semiconductor device, so that reduce the cost of electronic system.In response to this, many semiconductor manufacturing factory men are providing and can directly be fixed to non-encapsulated semiconductor element or the chip that system circuit board is installed with active die surfaces in " flip-chip " mode.The method has reduced the direct cost of semiconductor device, has also improved its performance by means of reducing lead-in inductance and other parasitic antenna.But because this non-encapsulated semiconductor chip manifests seldom or the information about type of die such as its manufacturing firm or dash number not, so " flip-chip " technology has usually improved indirect cost.Under the situation of system misoperation, be difficult to follow the trail of defective really cutting make producer or manufacturing process.
For fear of this problem, some chip is manufactured with thick back coating, and the surface of coating records the information about semiconductor device, so that track the manufacturing manufacturing firm of device in the defective incident.Other chip adopts the gold plating that is corroded so that desirable figure to be provided.But these methods cause the contrast of information low, thereby visual low, even watch also like this by microscope or other eyesight instrument in some cases.In order to compensate low contrast, the prior art coating indicates that with large print this has reduced the amount of information that can be indicated, and is particularly all the more so on little tube core.As a result, just reduced the ability of defect semiconductor's device of following the trail of to concrete processing step, thus this just make it to be difficult to more to prevent to reduce die yield and reliability reduce device and system total manufacturing cost with the defective that exists.
Therefore, so that reduce the manufacturing cost of semiconductor device and improve the semiconductor device and the method for its reliability, exist demand for providing about the information that can discern easily of semiconductor device.
Summary of the invention
According to an aspect of the present invention, provide a kind of semiconductor device, it comprises: semiconductor element, and it has the first surface that is used for forming electronic circuit; And coating, it is set on the second surface of semiconductor element, so that have the color that the color with semiconductor element presents a contrast, wherein, coating is by graphical, so that the expose portion second surface, thereby manifests the information of relevant semiconductor device.
According to a further aspect in the invention, provide a kind of semiconductor device, it comprises: Semiconductor substrate, and it has top surface and the back side with first color that is used for forming electronic circuit; First coating, it is formed on this back side and has second color that presents a contrast with first color; And second coating, it is formed on first coating surface with the 3rd color, and wherein the 3rd color and first and second colors present a contrast; First window on the second layer, it exposes the horizontal surface of first coating so that the information about this semiconductor device to be provided; With second window on first and second coatings, it exposes the window of this back side with additional information that relevant semiconductor device is provided.
According to a further aspect in the invention, a kind of method of making semiconductor element comprises the following step: the surface of semiconductor wafer that will have first color is stacked with first material with second color that presents a contrast with first color; First material is stacked with second material with the 3rd color that presents a contrast with first and second colors; Form first window by second material, thereby expose the horizontal surface of first material, so that the information that can see of relevant semiconductor device is provided; And form second window by second and first material, thus expose the surface of semiconductor wafer, so that the additional information that can see of relevant semiconductor device is provided.
According to a further aspect in the invention, a kind of semiconductor device comprises: the semiconductor element that is formed with electric component; And semiconductor package part, it comprises a lead that is coupled to this semiconductor element, and have and be used for the organic material of encapsulating semiconductor tube core and to this lead of small part, wherein this organic material has first color, and wherein window is formed in the organic material, so that expose the surface of this lead, this lead has second color that presents a contrast with first color, so that the information that can see of relevant semiconductor device is provided.
According to a further aspect in the invention, a kind of semiconductor device comprises: semiconductor element, and it has the first surface that is used for forming electronic circuit; And laminated coating, it is set on the second surface of semiconductor element, and comprise first and second layers that have the first and second contrast colors respectively, wherein, ground floor so that expose a part of the horizontal surface of the second layer, thereby is provided the information that can see of relevant semiconductor device by graphical, and wherein first and second layers of quilt are further graphically to expose the part second surface of semiconductor element, so that the additional information that can see of relevant semiconductor device is provided.
Description of drawings
Fig. 1 is the isometric chart of semiconductor wafer;
Fig. 2 is a profile, shows the further details of part wafer;
Fig. 3 is a profile, shows the part wafer in the first flexible embodiment;
Fig. 4 is a profile, shows the part wafer in the second flexible embodiment;
Fig. 5 is a profile, shows the part wafer in the 3rd flexible embodiment;
Fig. 6 is the exploded view that comprises with the electrical system of cutting the semiconductor device that forms from the semiconductor element of semiconductor wafer of encapsulation; And
Fig. 7 is the profile that is placed in the semiconductor element in the semiconductor package part.
Embodiment
In each accompanying drawing, the reference number components identical has similar function.
Fig. 1 is the isometric chart that manufactures the semiconductor wafer 10 with a plurality of semiconductor elements, and each tube core is designated as Semiconductor substrate or tube core 20.Active surface is that top surface 14 is used to form circuit, can comprise transistor and/or other active device.Wafer reference edge 12 provides the information about the conduction type and the crystal orientation of wafer 10.After forming circuit, coating material 16 is applied to the back side 15.
Fig. 2 is a profile, shows the further details of the part wafer 10 that comprises semiconductor element 20.Notice that semiconductor element 20 is illustrated as " flip-chip " orientation with Fig. 1 opposite orientation.
A plurality of conductive projections 18 are formed on the top surface 14, are electrically connected and mechanical connection so that form between the Circuits and Systems circuit board on top surface 14 (not shown among Fig. 2).Conductive projection 18 typical cases are by solder, electro-coppering or be suitable for forming necessary electricity and/or mechanical fixation and other electric conducting material of not reducing the performance that is formed on the circuit on the semiconductor element 20 is formed.
After forming circuit and conductive projection 18, coating material 16 is applied to the back side 15, so that produce the matt appearance that its color and semiconductor element 20 present a contrast.Coating material 16 is selected to the strong adhesiveness that is provided to the lower semiconductor material, satisfies specific reliability standard simultaneously.Form coating material 18 with organic material, because pigment can be added into producing desirable color, and because the quantity and the type of filler can be changed to produce specific temperature expansion coefficient, so that reduce the stress of tube core or wafer as far as possible.Coating material 16 can have elasticity or compliant characteristic, so that at the stress that further reduces under specific environment and the condition of work on the semiconductor element 20.In one embodiment, coating material 16 comprises a kind of flexible-epoxy HysolCNB876-36 with silica-filled agent material that can obtain from California Loctite company.Coating material also can comprise polymer.
If necessary, has visual contrast by means of adding the color that pigment is configured to coating material its color and semi-conducting material at surperficial 15 places.In semiconductor element 20 was described to embodiment that the silicon of canescence or taupe forms by its color, coating material 16 is formed had opaque black.Perhaps, coating material 16 can be formed and in fact have any other color that forms good visual contrast with the canescence of silicon.
Coating material 16 typically determines highly that by it grid of film thickness is coated with the form of liquid with the silk screen method.Screen fabric can be stainless steel or polyester, and the order number is about 110-230.Coating material 16 is coated in thickness and is about the 5-37 micron.In one embodiment, the thickness of coating material 16 is about 30 microns, and is cured under 150 ℃ 30 minutes.This low curing temperature does not influence the function that is formed on the device on the semiconductor element 20, and is lower than the backflow or the fusion temperature of scolder.
Optionally to remove materials,, come overleaf flag information on 15 by means of direct electromagnetic radiation line 30 so that form the window 21 at the expose portion back side 15 from coating material 16.In one embodiment, radiation 30 comprises laser beam, and it is programmed so that produce the alphabetic character of representing information needed or the window 21 of other symbol shape.If wishing not produce to change or only produce under the situation of the most small change in the structure to semiconductor element 20 surfaces 15 guarantees that material is removed fully from coating material 16, then can adjust the parameter such as the sweep time of the current level of laser or beam intensity, pulse rate, beam diameter and laser beam.Perhaps, by means of light erosion resistant agent layer being coated to coating material 16 and optionally corroding, can form window 21 to remove material.Obtain between the top surface 14 and the back side 15 with the standard alignment tools, that is aiming between window 21 and the semiconductor element 20.
Because the film thickness of coating material 16 is less than about 37 microns,, can produce highly readable alphabetic character so arrive about 250 microns character or font height with little.This little font makes it possible to provide more information, and if semiconductor element 20 has little die area, then is particular importance.Be attributed to the high contrast of the back side 15 expose portions, make the very little amplification of usefulness maybe need not amplify information with regard to identifiable marker.
After coating material 16 was cured and is graphical, the saw road 22 that is used for cutting out from semiconductor wafer 10 semiconductor element 20 limited semiconductor elements 20.
Fig. 3 is a profile, shows the part wafer 10 of second embodiment.The intensity of Enhanced Radiation Reduced Blast line 30 and/or pulse rate are so that 15 local removing semi-conducting materials are so that form the sunk surface 17 from the back side except form window 21A in coating material 16 after, and each element of second embodiment has similar in appearance to the characteristic of the described element of Fig. 2.Therefore, when watch window 21A, the two all can see the back side 15 and sunk surface 17.The semi-conducting material of being removed by radiation 30 produces the texture more coarse than the polishing texture at the back side 15 on sunk surface 17.As a result, sunk surface 17 color relations of seeing are different from the color at the back side of seeing 15, thereby produce the tagging scheme of the color of the color at color with 3 kinds of discernible contrast colors that is coating material 16, the back side 15 and sunk surface 17.By the additional color that sunk surface 17 provides, provide and transmitted extraneous information and the chance of not obvious raising manufacturing cost.
Fig. 4 shows the profile of the part wafer 10 of the 3rd embodiment, and this embodiment provides different intensity level or flexible color scheme.Coating material 16 has multilayer or laminated construction, comprises the coating 25 of first color and the coating 26 of second color that presents a contrast with first color.For example, first and second colors can be respectively white and black, green and white or by means of pigment is joined coating 25-26 with transmission such as manufacturing manufacturing firm colored marking information and any other combination of the contrast color selected.
Notice that in the present embodiment, remove material by coating 26, window 21 is formed, thereby exposes the surface 25 of below coating 25, to obtain desirable contrast.By means of the intensity of adjusting radiation 30 and/or the time of irradiation, obtain removing by the material of coating 26.Coating 25-26 is typically being applied to similar in appearance to the described mode of Fig. 2 in the lamination in succession, and is cured simultaneously.The thickness of coating 25-26 respectively is about the 5-18 micron.Perhaps, coating 25-26 is formed on the plastic sheet in succession, and accepts the curing of B level, enables not to be damaged by disposal.Before forming window 21, with stacked instrument this plastic sheet is contacted with the back side 15, heat bondingly to impel, be cured then.
Fig. 5 shows the profile of the part wafer 10 of the 4th embodiment.In the present embodiment, coating 16 comprise first color coating 42 and with the coating 40 of the two second color that presents a contrast of color of semiconductor element 20 shown in first color and the surface 15.Therefore, after graphical, 3 kinds of contrast colors can be seen, a large amount of desired information can be used to provide.
To be coated with application layer 40 and 42 similar in appearance to the described mode of Fig. 4.Note, in the present embodiment,, form window 21, by means of removing material to expose the surface 15 of semiconductor element 20, form window 23 simultaneously from coating 40 by means of removing material to expose the surface 28 of coating 42 by coating 40.This multilevel method is easily expanded to utilizes 3 or more a plurality of contrast color coating.
Fig. 6 shows the exploded view of electrical system 70, and it comprises system circuit board 60 and the semiconductor device 50 that forms with the semiconductor element 20 according to the second flexible embodiment that comprises coating 40 and 42 as described in Figure 4.Circuit board 60 comprises and is used for the conductive projection 18 of semiconductor device 50 is installed to the installing zone 64 of a plurality of conductive bond solder joints 62.
By means of optionally removing material with exposed surface 28 and 15 from coating 40 and 42, the information of relevant semiconductor device 50 is provided as mentioned above, thereby the appreciable symbol and/or the alphabetic character of a plurality of strong contrast colors are provided.Character shown in the semiconductor device 50 is formed has about 250 microns height.
Fig. 6 shows the example of this information, can comprise that terminal is supported or system makes the sign or the customization dash number of manufacturing firm, thereby reduce stock and other cost of semiconductor device 50.Semiconductor manufacturing factory man's sign or other distinguishing mark can be provided to convenient contact when finding the defective of semiconductor device 50.Such as batch, wafer the identification of wafer and tube core and dash number and/or the sequence number and the machining information of tube core, make the semiconductor manufacturing factory man can follow the trail of semiconductor device 50, so that circle is lived the source of defective to concrete procedure of processing.Many defectives may be relevant with specific procedure of processing, usually can obtain correction by means of revising procedure of processing, thereby improved the reliability and the overall manufacturing cost that has reduced device of the device of same processing.In addition, also can provide such as the position of die orientation and/or reference leads that is the information that can be used for terminal use or manufacturing firm of system the pin " 1 ".Except alphabetic character, the enhanced contrast that is provided by said structure also is suitable for providing information with the form of machine readable symbol or bar code.
Fig. 7 is the profile that comprises the encapsulated semiconductor device 80 of the semiconductor element 20 that is placed in the semiconductor package part 82.Semiconductor element 20 is formed the bipolar electrode device, diode for example, and its size on one side is less than about 1.5mm, and has first and second electrodes and be respectively formed at vertical device structure on the surface 14 and 15.
For the necessary information of remarkable quantity is provided in the available a little space on packaging part 80, window 21 is configured to have little font size.As a result, in order to provide observed information required high visuality, the strikingly color contrast is a particular importance.
The method of a kind of semiconductor device and the information that relevant semiconductor device is provided has been described in a word.Semiconductor element has the first surface that is used for forming electronic circuit.The coating that the color of its color and semiconductor element presents a contrast is arranged on the second surface, and quilt is graphical so that expose second surface, thereby manifests the information of relevant semiconductor device with the form of symbol or alphabetic character.Use the direct irradiance method such as the programming laser beam that coating is carried out graphically, so that remove material by coating.Epoxy resin, polymer or various other organic compound can be used as coating material provides desirable intensity level.Can be with silk screen, stacked, spraying, cast, transplant or other method applies coating material.The gross thickness of coating material is formed less than about 37 microns, so that obtain little font size, but this has improved the quantity of the remarkable identifying information that can be provided.
Claims (11)
1. semiconductor device, it comprises:
Semiconductor substrate, it has top surface and the back side with first color that is used for forming electronic circuit;
First coating, it is formed on this back side and has second color that presents a contrast with first color; And
Second coating, it is formed on first coating surface with the 3rd color, and wherein the 3rd color and first and second colors present a contrast;
First window on second coating, it exposes the horizontal surface of first coating so that the information about this semiconductor device to be provided; With
Second window on first and second coatings, it exposes this back side so that the additional information of relevant semiconductor device to be provided.
2. the semiconductor device of claim 1, wherein, the thickness of described first coating is less than 18 microns.
3. the semiconductor device of claim 2, wherein, the thickness of described second coating is less than 18 microns.
4. the semiconductor device of claim 1, wherein, described first color is a white, and second color is a black.
5. the semiconductor device of claim 1, wherein, described information comprises alphanumeric character.
6. the semiconductor device of claim 5, wherein, described alphanumeric character is formed by the font of height less than 300 microns.
7. method of making semiconductor element, it comprises the following step:
The surface of semiconductor wafer that will have first color is with to have first material of second color that presents a contrast with first color stacked;
First material is stacked with second material with the 3rd color that presents a contrast with first and second colors;
First window of second material is passed in formation, thereby exposes the horizontal surface of first material, so that the information that can see of relevant semiconductor device is provided; And
Second window of second and first material is passed in formation, thereby exposes the surface of semiconductor wafer, so that the additional information that can see of relevant semiconductor device is provided.
8. the method for claim 7, wherein, the step of described laminate surface comprises surface applied to the step of thickness less than 18 microns.
9. the method for claim 7, wherein, the step of described stacked first material comprises first material is coated to thickness less than 18 microns step.
10. the method for claim 7, also be included in described stacked step after cutting semiconductor chip to form the step of semiconductor element.
11. a semiconductor device, it comprises:
Semiconductor element, it has the first surface that is used for forming electronic circuit; And
Laminated coating, it is set on the second surface of semiconductor element, and comprise first and second layers that have the first and second contrast colors respectively, wherein, ground floor so that expose a part of the horizontal surface of the second layer, thereby is provided the information that can see of relevant semiconductor device by graphical, and wherein first and second layers of quilt are further graphically to expose the part second surface of semiconductor element, so that the additional information that can see of relevant semiconductor device is provided.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| HK08103168.2A HK1116359A1 (en) | 2002-02-07 | 2008-03-19 | Semiconductor device and method of producing semiconductor die |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PCT/US2002/003768 WO2003073504A1 (en) | 2002-02-07 | 2002-02-07 | Semiconductor device and method of producing high contrast identification mark |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB028275683A Division CN100365812C (en) | 2002-02-07 | 2002-02-07 | Semiconductor device and method for producing high contrast identifying mark |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101101907A CN101101907A (en) | 2008-01-09 |
| CN100487891C true CN100487891C (en) | 2009-05-13 |
Family
ID=27765145
Family Applications (3)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB2007101424129A Expired - Fee Related CN100487891C (en) | 2002-02-07 | 2002-02-07 | Making method for semiconductor part and semiconductor tube core |
| CNB028275683A Expired - Fee Related CN100365812C (en) | 2002-02-07 | 2002-02-07 | Semiconductor device and method for producing high contrast identifying mark |
| CNB2006100778244A Expired - Lifetime CN100487339C (en) | 2002-02-07 | 2002-09-07 | Compressor technology information device |
Family Applications After (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB028275683A Expired - Fee Related CN100365812C (en) | 2002-02-07 | 2002-02-07 | Semiconductor device and method for producing high contrast identifying mark |
| CNB2006100778244A Expired - Lifetime CN100487339C (en) | 2002-02-07 | 2002-09-07 | Compressor technology information device |
Country Status (4)
| Country | Link |
|---|---|
| CN (3) | CN100487891C (en) |
| AU (1) | AU2002253917A1 (en) |
| HK (1) | HK1076663A1 (en) |
| WO (1) | WO2003073504A1 (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102006019118B4 (en) * | 2006-04-25 | 2011-08-18 | Epcos Ag, 81669 | Optical marking component and method of manufacture |
| WO2010044783A1 (en) * | 2008-10-15 | 2010-04-22 | Texas Instruments Incorporated | Semiconductor package having marking layer |
| US10720360B2 (en) | 2016-07-29 | 2020-07-21 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor die singulation and structures formed thereby |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5294812A (en) * | 1990-09-14 | 1994-03-15 | Kabushiki Kaisha Toshiba | Semiconductor device having identification region for carrying out failure analysis |
| US5688573A (en) * | 1991-12-18 | 1997-11-18 | Minnesota Mining And Manufacturing Company | Halogen-free acrylic urethane sheet material |
| US6169266B1 (en) * | 1998-03-25 | 2001-01-02 | Xirom, Inc. | Etching of multi-layered coated surfaces to add graphic and text elements to an article |
| US6181017B1 (en) * | 1999-04-14 | 2001-01-30 | Advanced Micro Devices, Inc. | System for marking electrophoretic dies while reducing damage due to electrostatic discharge |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5061341A (en) * | 1990-01-25 | 1991-10-29 | Eastman Kodak Company | Laser-ablating a marking in a coating on plastic articles |
| US6023094A (en) * | 1998-01-14 | 2000-02-08 | National Semiconductor Corporation | Semiconductor wafer having a bottom surface protective coating |
| US6432796B1 (en) * | 2000-06-28 | 2002-08-13 | Micron Technology, Inc. | Method and apparatus for marking microelectronic dies and microelectronic devices |
-
2002
- 2002-02-07 CN CNB2007101424129A patent/CN100487891C/en not_active Expired - Fee Related
- 2002-02-07 WO PCT/US2002/003768 patent/WO2003073504A1/en not_active Application Discontinuation
- 2002-02-07 CN CNB028275683A patent/CN100365812C/en not_active Expired - Fee Related
- 2002-02-07 AU AU2002253917A patent/AU2002253917A1/en not_active Abandoned
- 2002-09-07 CN CNB2006100778244A patent/CN100487339C/en not_active Expired - Lifetime
-
2005
- 2005-09-29 HK HK05108631A patent/HK1076663A1/en not_active IP Right Cessation
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5294812A (en) * | 1990-09-14 | 1994-03-15 | Kabushiki Kaisha Toshiba | Semiconductor device having identification region for carrying out failure analysis |
| US5688573A (en) * | 1991-12-18 | 1997-11-18 | Minnesota Mining And Manufacturing Company | Halogen-free acrylic urethane sheet material |
| US6169266B1 (en) * | 1998-03-25 | 2001-01-02 | Xirom, Inc. | Etching of multi-layered coated surfaces to add graphic and text elements to an article |
| US6181017B1 (en) * | 1999-04-14 | 2001-01-30 | Advanced Micro Devices, Inc. | System for marking electrophoretic dies while reducing damage due to electrostatic discharge |
Also Published As
| Publication number | Publication date |
|---|---|
| CN1618128A (en) | 2005-05-18 |
| CN100365812C (en) | 2008-01-30 |
| AU2002253917A1 (en) | 2003-09-09 |
| HK1076663A1 (en) | 2006-01-20 |
| WO2003073504A1 (en) | 2003-09-04 |
| CN101101907A (en) | 2008-01-09 |
| CN100487339C (en) | 2009-05-13 |
| CN101055128A (en) | 2007-10-17 |
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