CN100487859C - Wet cleaning device, and method for cleaning substrate - Google Patents
Wet cleaning device, and method for cleaning substrate Download PDFInfo
- Publication number
- CN100487859C CN100487859C CNB2006101714023A CN200610171402A CN100487859C CN 100487859 C CN100487859 C CN 100487859C CN B2006101714023 A CNB2006101714023 A CN B2006101714023A CN 200610171402 A CN200610171402 A CN 200610171402A CN 100487859 C CN100487859 C CN 100487859C
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- substrate
- automatic clamping
- clamping chuck
- rinse bath
- flushed channel
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
- H01L21/0206—Cleaning during device manufacture during, before or after processing of insulating layers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67057—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing with the semiconductor substrates being dipped in baths or vessels
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
- H01L21/67742—Mechanical parts of transfer devices
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Cleaning In General (AREA)
Abstract
The present invention relates to a substrate rinse tank slso used as an atomatic collet rinse tank combinating an atomatic collet rinse tank for cleaning the atomatic collet of grasping substrate and a substrate rinse tank for cleaning the cleaned substrate, and a wet washing unit provided with the substrate rinse tank combinating with an atomatic collet rinse tank, and the cleaning method. The substrate rinse tank slso used as an atomatic collet rinse tank contains a container having deinoized water with a open top end, a cover rotatablely set on the container for switching the container, a drying unit set in the cover.
Description
Technical field
The present invention relates to a kind of wet type washing device, relate in particular to the automatic clamping chuck rinse bath and being used to that to be used to clean the automatic clamping chuck (Robot Chuck) that grasps substrate in the wet type washing device and wash the substrate flushed channel that is also used as the automatic clamping chuck rinse bath that the substrate flushed channel through the substrate of clean forms as one, and have wet type washing device and the matrix cleaning method that this is also used as the substrate flushed channel of automatic clamping chuck rinse bath.
Background technology
Along with the granular of the design rule (Design Rule) of semiconductor element circuit design, the pollution that the various particulates (Particle) that generate on the employed semiconductor chip in the semiconductor element production process or adhere to, metal impurities, organic substance etc. cause becomes increasing to the influence that the rate of finished products or the reliability of goods produces.Thereupon, the importance of removing in the semiconductor element production process attached to the cleaning of the pollutant on the semiconductor chip becomes increasing.
The cleaning method of semiconductor chip comprises that the dry type (Dry) that relies on plasma treatment or ultraviolet irradiation etc. is cleaned and the wet type (Wet) of use cleaning fluid is cleaned.In these cleaning methods, wet-cleaned and dry type clean to compare to be had that installation cost is low, treating capacity is high, can remove polytype simultaneously and pollute, can carry out in batches (Batch) according to processing method and handle or front-back such as cleans simultaneously at advantage, therefore at present in semiconductor technology wet-cleaned occupy dominant position.
The wet type washing device that with reference to the accompanying drawings prior art is described and is provided and be located at wherein automatic clamping chuck rinse bath.
Fig. 1 is the synoptic diagram of the wet type washing device that provides of prior art, and Fig. 2 is the cutaway view of the automatic clamping chuck rinse bath that provides of prior art.
As shown in the figure, existing general wet type washing device comprise have a plurality of substrate transport units 10 that are used to transmit transferring arm (Robot) 12 (12a to 12e) of substrate, with described substrate load to the loading part 30 of this device, be used to clean described substrate cleaning part 50, be used for substrate is carried out dry drying section 60 and will be transported to outside unloading portion 40 at the substrate that described cleaning part 50 cleans.
Described substrate transport unit 10 is used for substrate is moved to unloading portion 40 from loading part 30 through cleaning part 50 and drying section 60, and comprises the transferring arm 12 (12a to 12e) that the automatic clamping chuck 14 (14a to 14e) that grasps substrate is installed and moves along the clean direction and be used to the transmission guide rail 16 that guides described transferring arm to move.Usually, form a substrate group, thereby in a cleaning, simultaneously a plurality of substrates are cleaned by a plurality of substrates.
Described loading part 30 is provided with the loader (Loader) 31 that is used to place the substrate box (Cassette) 70 that carries a plurality of substrates and as the buffer stage (BufferStage) 32 of the cleaning cocked orientation of substrate.Described loader 31 is sent to buffer stage 32 after substrate box 70 takes out substrate, and space base film magazine 70 is sent to unloading portion 40.Described unloading portion 40 is provided with emptier (Unloader) 41, is transported to the outside thereby will carry substrate box 70 through the substrate of clean.
Between described loading part 30 and the unloading portion 40 according to straight line adjacent with described loading part 30 by a plurality of treatment troughs 51 (51a, 51c, 51r, 52c, 52r, 53c, 53r) cleaning part 50 of Zu Chenging and the drying section 60 adjacent with described unloading portion 40.Described treatment trough 51 comprises automatic clamping chuck rinse bath 51a that deionized water is housed for the automatic clamping chuck 14a that cleans transferring arm 12a, first to the 3rd substrate rinse bath (51c of chemical cleaning solution is housed for substrate being carried out actual wet-cleaned, 52c, 53c) with in order to wash and first to the 3rd substrate flushed channel (51r of deionized water is housed through the substrate of clean, 52r, 53r).Automatic clamping chuck rinse bath 51a is used to remove the cleaning fluid that sticks in when withdrawing from the automatic clamping chuck 14a after the automatic clamping chuck 14a of the first transferring arm 12a drops into substrate the first rinse bath 51c.This be for prevent as far as possible automatic clamping chuck 14a with substrate rest to substrate rinse bath 51c and after withdrawing from, be moved to as the buffer stage 32 of the cocked orientation of next substrate that will be processed at the state of not removing chemical cleaning solution and pollute buffer stage 32.
As shown in Figure 2, described automatic clamping chuck rinse bath 51a is the container that deionized water is equipped with in inside, has and the similar structure of general flushed channel.Difference is, is provided with a plurality of purge gas (Purge Gas) injector 55 that is used for drying and sticks in the deionized water on the automatic clamping chuck 14a around the automatic clamping chuck 14a on described automatic clamping chuck rinse bath 51a top.That is, be immersed in after described automatic clamping chuck 14a descends in the deionized water in the automatic clamping chuck rinse bath 51a and be cleaned, finish and rise again after cleaning.At this moment, described automatic clamping chuck 14a carries out drying by non-reactive gas such as being arranged on the nitrogen that purge gas injector 55 sprayed around it, air.
Aforesaid rinse bath and flushed channel as shown in Figure 1, automatic clamping chuck rinse bath 51a and buffer stage 32 are adjacent and arrange, subsequently arranged alternate substrate rinse bath (51c, 52c, 53c) and the substrate flushed channel (51r, 52r, 53r).Finish through described cleaning part 50 and to clean and the substrate of flushing is finished dried by the drier drying section 60 in 61 and is sent to unloading portion 40 afterwards.
In aforesaid existing wet type washing device, substrate passes through loader 31, buffer stage 32, the first substrate rinse bath 51c, the first substrate flushed channel 51r, the second substrate rinse bath 52c, the second substrate flushed channel 52r, the 3rd substrate rinse bath 53c, the 3rd substrate flushed channel 53r, drier 61 and emptier 41 successively.
When first substrate group was carried out washing and cleaning operation, the automatic clamping chuck 14a of the first transferring arm 12a grasped first substrate group and is sent to the first substrate rinse bath 51c in described buffer stage 32, retreats into then among the automatic clamping chuck rinse bath 51a and cleans.
Then, in order to carry out the washing and cleaning operation of second substrate group, the automatic clamping chuck 14a of the described first transferring arm 12a is sent to the first substrate flushed channel 51r with first substrate group from the first substrate rinse bath 51c earlier.Then, the automatic clamping chuck 14a of the first transferring arm 12a moved to described buffer stage 32 more earlier and grasps second substrate group and put in the first substrate rinse bath 51c before moving to the buffer stage 32 of placing second substrate group after automatic clamping chuck rinse bath 51a cleans automatic clamping chuck 14a.
In this process, though second substrate group just can be put among the first substrate rinse bath 51c after first substrate group is sent to the first substrate flushed channel 51r at once, in the time that the automatic clamping chuck 14a of the first transferring arm 12a cleans in automatic clamping chuck rinse bath 51a, can only wait in buffer stage 32.
Promptly, the time that the automatic clamping chuck 14a of the first transferring arm 12a cleans in automatic clamping chuck rinse bath 51a after first substrate group is sent to the first substrate rinse bath 51c can not exert an influence to the whole process time, because this moment, substrate just carried out clean in the first substrate rinse bath 51c.But when then dropping into second substrate group, because the automatic clamping chuck 14a of the first transferring arm 12a is sent to second substrate group before the first vacant substrate rinse bath 51c after first substrate group is sent to the first substrate flushed channel 51r from buffer stage 32, need clean and drying through automatic clamping chuck rinse bath 51a, so this automatic clamping chuck scavenging period brings influence to the whole process time.
Summary of the invention
The present invention proposes in order to solve aforesaid problem, its purpose is to provide by cancelling the special-purpose rinse bath of special automatic clamping chuck and reduces the substrate flushed channel that is also used as the automatic clamping chuck rinse bath of wet type washing device size, and has wet type washing device and the matrix cleaning method that this is also used as the substrate flushed channel of automatic clamping chuck rinse bath.
Another object of the present invention is to provide technology to simplify the substrate flushed channel that is also used as the automatic clamping chuck rinse bath of whole wet-cleaned technology, and have wet type washing device and the matrix cleaning method that this is also used as the substrate flushed channel of automatic clamping chuck rinse bath by cancellation cleaning automatic clamping chuck in special automatic clamping chuck rinse bath.
To achieve these goals, but be included in inside according to the substrate flushed channel that is also used as the automatic clamping chuck rinse bath provided by the present invention and the open container turn in the upper end of deionized water is housed be arranged on the capping that described container top is used to open and close described container upper end, the drying device that is located at described capping inboard.
Described drying device preferably comprises the purge gas injector to the automatic clamping chuck gas jet of described transferring arm.
Wet type washing device provided by the present invention comprises the loading part that the substrate of wanting clean waits, more than one substrate rinse bath, and the more than one substrate flushed channel that is arranged alternately of described substrate rinse bath, has automatic clamping chuck that grasps substrate and the transferring arm that transmits substrate between described loading part and substrate rinse bath and substrate flushed channel, and is arranged in described loading part substrate flushed channel nearby and comprises the automatic clamping chuck that is used for described transferring arm and carry out dry drying device.
Described drying device comprises the purge gas injector to the automatic clamping chuck gas jet of described transferring arm.At this moment, described purge gas injector preferably dips down tiltedly towards the automatic clamping chuck gas jet of described transferring arm.
Be arranged in described loading part substrate flushed channel nearby and be provided with the capping that is used to open and close its upper end, described drying device is arranged on described capping.At this, but described capping turn be arranged on substrate flushed channel top, described drying device is preferably disposed on described capping medial surface.
Matrix cleaning method provided by the present invention comprises step: the automatic clamping chuck of transferring arm will rise after substrate is in loader is placed to the substrate rinse bath; Described substrate is finished cleaning in the substrate rinse bath after, described automatic clamping chuck grasps the substrate in the described substrate rinse bath and is sent to the substrate flushed channel; When described automatic clamping chuck when rising after substrate rest is in described substrate flushed channel, described automatic clamping chuck is carried out drying.
Describedly automatic clamping chuck is carried out dry step preferably comprise the step that non-reactive gas is ejected into the automatic clamping chuck of described rising.
Described automatic clamping chuck is carried out in the dry step, the rate of climb of described automatic clamping chuck preferably is controlled as described automatic clamping chuck can carry out dry speed.
Described automatic clamping chuck is carried out preferably also comprising described transferring arm is sent to follow-up substrate to be processed the substrate rinse bath from loader step after the dry step.
Description of drawings
Fig. 1 is the synoptic diagram of the wet type washing device that provides of prior art;
Fig. 2 is the cutaway view of the automatic clamping chuck rinse bath that provides of prior art;
Fig. 3 is a synoptic diagram of using the wet type washing device of the substrate flushed channel that is also used as the automatic clamping chuck rinse bath provided by the present invention;
Fig. 4 is the cutaway view that is also used as the substrate flushed channel of automatic clamping chuck rinse bath provided by the present invention.
Main symbol description: 120 (120a to 120e) are transferring arm, 140 (140a to 140e) are automatic clamping chuck, 320 is buffer stage, 510c, 520c, 530c are the substrate rinse bath, 510r, 520r, 530r are the substrate flushed channel, and 511r is a container, and 513r is flushed channel capping (Cover), 515 is the purge gas injector, and 516r is substrate guider (Guide).
Embodiment
Below, the preferred embodiment of the substrate flushed channel that is also used as the automatic clamping chuck rinse bath that present invention will be described in detail with reference to the accompanying is provided.
Fig. 3 is a synoptic diagram of using the wet type washing device of the substrate flushed channel that is also used as the automatic clamping chuck rinse bath provided by the present invention, and Fig. 4 is the cutaway view that is also used as the substrate flushed channel of automatic clamping chuck rinse bath provided by the present invention.
As shown in Figure 3, wet type washing device provided by the present invention comprise have a plurality of substrate transport units 100 that are used to transmit the transferring arm 120 of substrate, with described substrate load to the loading part 300 of this device, be used to clean described substrate cleaning part 500, be used for substrate is carried out dry drying section 600 and will be transported to outside unloading portion 400 at the substrate that described cleaning part 500 cleans.
Particularly, described substrate transport unit 100 is used for substrate is moved to unloading portion 400 from loading part 300 through cleaning part 500 and drying section 600, and comprises and grasp first to the 5th transferring arm 120 (120a to 120e) that substrate moves along the clean direction and the transmission guide rail 160 that moves that is used to guide described first to the 5th transferring arm 120.Described first to the 5th transferring arm 120 comprises respectively and grasps substrate and first to the 5th automatic clamping chuck 140 (140a to 140e) of oscilaltion.Described automatic clamping chuck 140 once grasps a plurality of substrates and transmits.That is, form a substrate group, thereby in a cleaning, simultaneously a plurality of substrates are cleaned by a plurality of substrates.
Described loading part 300 is arranged on Weft cleaner one end.It is to carry out the buffer stage 320 that cleaning is waited for that described loading part 300 is provided with the substrate that is used to place the loader 310 of the substrate box 700 that carries a plurality of substrates and takes out from described substrate box 700.Described loader 310 takes out substrate from substrate box 700 and is sent to buffer stage 320, and space base film magazine 700 is sent to unloading portion 400.Be placed on the pending cleanings such as substrate of described buffer stage 320.Described unloading portion 400 is provided with emptier 410, is transported to the outside thereby the substrate that will finish clean carries substrate box 700 again.
Between described loading part 300 and the unloading portion 400 according to straight line adjacent with described loading part 300 by a plurality of treatment troughs 510 (510c, 510r, 520c, 520r, 530c, 530r) cleaning part 500 of Zu Chenging and the drying section 600 adjacent with described unloading portion 400.Described treatment trough 510 is set to a plurality of and can holds the substrate of plumbness, and comprise first to the 3rd substrate rinse bath (510c that chemical cleaning solution is housed for substrate is carried out wet-cleaned, 520c, 530c), in order to wash the substrate that in the first substrate rinse bath 510c, carries out clean and to clean the automatic clamping chuck 140a of the first transferring arm 120a that grasps substrate and the first substrate flushed channel 510r of deionized water is housed, in order to wash at second and third substrate rinse bath (520c, carry out the substrate of clean 530c) and be equipped with deionized water second and third substrate flushed channel (520r, 530r).Described first to the 3rd substrate rinse bath (510c, 520c, 530c) and first to the 3rd substrate flushed channel (510r, 520r is 530r) in the adjacent and edge cleaning travel direction arranged alternate after arranging of the described first substrate rinse bath 510c and buffer stage 32.Finish through described cleaning part 500 and to clean and the substrate of flushing is finished dried by the drier drying section 600 in 610 and is sent to unloading portion 400 afterwards.
The described first substrate flushed channel 510r in the described cleaning part 500 is exactly the substrate flushed channel that is also used as the automatic clamping chuck rinse bath provided by the present invention, conveniently is referred to as the first substrate flushed channel 510r in order to narrate in the present embodiment.As shown in Figure 4, but the described first substrate flushed channel 510r comprises the flushed channel capping 513r that inside open container 511r in the upper end of deionized water and turn are housed is arranged on two upper ends of described container 511r opposite side.Described flushed channel capping 513r medial surface is provided with a plurality of purge gas injectors 515 of non-reactive gas such as injection air or nitrogen, and this purge gas injector 515 is to be used for the automatic clamping chuck 140a of described transferring arm 120a is carried out dry drying device.Described purge gas injector 515 is used to remove and immerses the deionized water that adheres on the transferring arm 120a automatic clamping chuck 140a that withdraws from again after the described container 511r that deionized water is housed and dry described automatic clamping chuck 140a.At this moment, described dry gas preferably is in the high temperature drying state.And described purge gas injector 515 is not to be arranged on described flushed channel capping 513r, can be arranged on when described automatic clamping chuck 140a rises to spray non-reactive gas and to make any position of its drying to it.
The following describes the course of work of the wet type washing device that is provided with the aforesaid substrate flushed channel that is also used as the automatic clamping chuck rinse bath provided by the present invention.
In the wet type washing device provided by the present invention, substrate passes through loader 310, buffer stage 320, the first substrate rinse bath 510c, the first substrate flushed channel 510r, the second substrate rinse bath 520c, the second substrate flushed channel 520r, the 3rd substrate rinse bath 530c, the 3rd substrate flushed channel 530r, drier 610 and emptier 410 successively.
When first substrate group was carried out washing and cleaning operation, the automatic clamping chuck 140a of the first transferring arm 120a grasped first substrate group and is sent to the first substrate rinse bath 510c in described buffer stage 320.When first substrate group was finished cleaning in the first substrate rinse bath 510c, the described first transferring arm 120a was sent to the first substrate flushed channel 510r with first substrate group from the first substrate rinse bath 510c.
At this moment, if the automatic clamping chuck 140a of the described first transferring arm 120a grasps first substrate group W and is positioned at the described first substrate flushed channel 510r is the top that is also used as the substrate flushed channel of automatic clamping chuck rinse bath provided by the present invention, the capping 513r of the then described first substrate flushed channel 510r is opened.After this, the automatic clamping chuck 140a of the described first transferring arm 120a descends, and first substrate group W is placed on the substrate guider 516r that is arranged in the first substrate flushed channel 510r container 511r.When first substrate group W is placed to substrate guider 516r when going up, the automatic clamping chuck 140a of the described first transferring arm 120a is opened and discharges first substrate group W and make it be placed in described substrate guider 516r to rise after going up.At this moment, be arranged on non-reactive gas such as a plurality of purge gas injector 515 injection airs of described flushed channel capping 513r medial surface or nitrogen, the automatic clamping chuck 140a of the described first transferring arm 120a that comes out from deionized water is carried out drying.That is spray non-reactive gas to automatic clamping chuck 140a when, the automatic clamping chuck 140a that is controlled as at the described first transferring arm 120a of described injector 515 rises.
At this moment, the automatic clamping chuck 140a of the described first transferring arm 120a of rising needs the non-reactive gas drying that certain hour could be sprayed by described purge gas injector 515.Therefore, the rate of climb of considering the automatic clamping chuck 140a of described first transferring arm 120a drying time should be controlled as less than decrease speed.In addition, for the automatic clamping chuck 140a to the described first transferring arm 120a carries out drying, the injection direction of described purge gas injector 515 is preferably downward-sloping.
That is, the automatic clamping chuck 140a of the described first transferring arm 120a finishes when withdrawing from from the first substrate flushed channel 510r and cleans and drying after first substrate group is put into the first substrate flushed channel 510r.That is, the described first substrate flushed channel 510r is also used as the automatic clamping chuck rinse bath.
Thereupon, the automatic clamping chuck 140a that finishes the described first transferring arm 120a of cleaning is grasped in second substrate group waiting in the buffer stage 320 and is sent to (current vacant) first substrate rinse bath 510c, makes second substrate group carry out cleaning in the first substrate rinse bath 510c.Then, when second substrate group when the described first substrate rinse bath 510c finishes cleaning, the automatic clamping chuck 140a of the described first transferring arm 120a is sent to the first substrate flushed channel 510r with second substrate group.At this moment, original first substrate group in the described first substrate flushed channel 510r is sent to the second substrate rinse bath 520c by the second transferring arm 120b, second substrate group make the substrate flushed channel 510r that wins become vacant state, so can successfully be sent to the first substrate flushed channel 510r.If also at the developing technique that carries out first substrate group, the automatic clamping chuck 140a of the then described first transferring arm 120a is waiting second substrate group after the first substrate rinse bath 510c takes out on the first substrate flushed channel 510r top among the first substrate flushed channel 510r.
Though more than be illustrated with reference to drawings and Examples, the worker of affiliated technical field is to be understood that: in the scope that does not break away from the technology of the present invention thought that claims put down in writing, can carry out various changes and modifications to the present invention.
In sum, according to the substrate flushed channel that is also used as the automatic clamping chuck rinse bath provided by the present invention, when the automatic clamping chuck of transferring arm moves to buffer stage in order to grasp second substrate group with first substrate group after the substrate rinse bath is sent to the substrate flushed channel, because the automatic clamping chuck of described transferring arm cleans at described substrate flushed channel, therefore do not need the special-purpose rinse bath of special automatic clamping chuck.Thus, can be by cancelling the size that the special-purpose rinse bath of special automatic clamping chuck reduces wet type washing device.And,, therefore can reduce the unnecessary activity duration owing to the automatic clamping chuck that first substrate group is moved to the described transferring arm of substrate flushed channel from the substrate rinse bath can directly move to buffer stage.
Claims (11)
1, a kind of substrate flushed channel that is also used as the automatic clamping chuck rinse bath is characterized in that comprising:
The open container in upper end of deionized water is housed in inside;
But be arranged on to turn the capping that described container top is used to open and close described container upper end, so that along with opening on the top of described container of described capping forms dry place;
Be located at the drying device of described capping inboard.
2, the substrate flushed channel that is also used as the automatic clamping chuck rinse bath according to claim 1 is characterized in that described drying device comprises the purge gas injector to the automatic clamping chuck gas jet of described transferring arm.
3, a kind of wet type washing device is characterized in that comprising:
The loading part of wanting the substrate of clean to wait,
More than one substrate rinse bath,
The more than one substrate flushed channel that is arranged alternately with described substrate rinse bath,
Have automatic clamping chuck that grasps substrate and the transferring arm that between described loading part and substrate rinse bath and substrate flushed channel, transmits substrate;
And be arranged in described loading part substrate flushed channel nearby and comprise: but turn be arranged on the capping that is used to open and close this substrate flushed channel upper end on this substrate flushed channel top so that along with opening on the top of this substrate flushed channel of described capping forms dry place; Carry out dry drying device with the automatic clamping chuck that is used for described transferring arm.
4, wet type washing device according to claim 3 is characterized in that described drying device comprises the purge gas injector to the automatic clamping chuck gas jet of described transferring arm.
5, wet type washing device according to claim 4 is characterized in that described purge gas injector dips down tiltedly towards the automatic clamping chuck gas jet of described transferring arm.
6, according to any described wet type washing device in the claim 3 to 5, it is characterized in that described drying device is arranged on described capping.
7, wet type washing device according to claim 6 is characterized in that described drying device is arranged on described capping medial surface.
8, a kind of matrix cleaning method is characterized in that comprising step:
The automatic clamping chuck of transferring arm will rise after substrate is in loader is placed to the substrate rinse bath;
Described substrate is finished cleaning in the substrate rinse bath after, described automatic clamping chuck grasps the substrate in the described substrate rinse bath and is sent to the substrate flushed channel with capping;
When rising after in described automatic clamping chuck is opened substrate rest to described capping the described substrate flushed channel, be opened and in the dry place that forms described automatic clamping chuck carried out drying in described capping simultaneously.
9, matrix cleaning method according to claim 8 is characterized in that describedly automatic clamping chuck is carried out dry step comprising the step that non-reactive gas is ejected into the automatic clamping chuck of described rising.
10, according to Claim 8 or 9 described matrix cleaning methods, it is characterized in that described automatic clamping chuck being carried out in the dry step, the rate of climb of described automatic clamping chuck is controlled as described automatic clamping chuck can carry out dry speed.
11, according to Claim 8 or 9 described matrix cleaning methods, it is characterized in that described automatic clamping chuck being carried out also comprising described transferring arm is sent to follow-up substrate to be processed the substrate rinse bath from loader step after the dry step.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020050131898 | 2005-12-28 | ||
| KR1020050131898A KR100637401B1 (en) | 2005-12-28 | 2005-12-28 | Combined cleaning bath for robot chuck, rinse bath for substrate and apparatus including the same, and method for cleaning substrate |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1992160A CN1992160A (en) | 2007-07-04 |
| CN100487859C true CN100487859C (en) | 2009-05-13 |
Family
ID=37621689
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB2006101714023A Expired - Fee Related CN100487859C (en) | 2005-12-28 | 2006-12-26 | Wet cleaning device, and method for cleaning substrate |
Country Status (3)
| Country | Link |
|---|---|
| KR (1) | KR100637401B1 (en) |
| CN (1) | CN100487859C (en) |
| TW (1) | TW200733211A (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100895963B1 (en) | 2007-09-07 | 2009-05-07 | 주식회사 케이씨텍 | Wet station for treating wafers |
| US20210407824A1 (en) * | 2020-06-30 | 2021-12-30 | Applied Materials, Inc. | Spm processing of substrates |
| CN113659044B (en) * | 2021-08-17 | 2023-07-25 | 通威太阳能(金堂)有限公司 | Cleaner and method for improving conversion efficiency of heterojunction solar cell |
-
2005
- 2005-12-28 KR KR1020050131898A patent/KR100637401B1/en not_active IP Right Cessation
-
2006
- 2006-12-26 CN CNB2006101714023A patent/CN100487859C/en not_active Expired - Fee Related
- 2006-12-27 TW TW095149285A patent/TW200733211A/en not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| TW200733211A (en) | 2007-09-01 |
| CN1992160A (en) | 2007-07-04 |
| TWI362065B (en) | 2012-04-11 |
| KR100637401B1 (en) | 2006-10-23 |
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