CN100485848C - Method for preparing transmission electron microscope test piece - Google Patents
Method for preparing transmission electron microscope test piece Download PDFInfo
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- CN100485848C CN100485848C CNB2003101216344A CN200310121634A CN100485848C CN 100485848 C CN100485848 C CN 100485848C CN B2003101216344 A CNB2003101216344 A CN B2003101216344A CN 200310121634 A CN200310121634 A CN 200310121634A CN 100485848 C CN100485848 C CN 100485848C
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- electron microscope
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- 238000012360 testing method Methods 0.000 title claims description 32
- 238000000034 method Methods 0.000 title abstract description 13
- 230000005540 biological transmission Effects 0.000 title description 11
- 229910052802 copper Inorganic materials 0.000 claims abstract description 34
- 239000010949 copper Substances 0.000 claims abstract description 34
- 229910052751 metal Inorganic materials 0.000 claims abstract description 34
- 239000002184 metal Substances 0.000 claims abstract description 34
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 33
- 238000010884 ion-beam technique Methods 0.000 claims abstract description 22
- 239000000463 material Substances 0.000 claims abstract description 12
- 239000000758 substrate Substances 0.000 claims description 63
- 238000002360 preparation method Methods 0.000 claims description 26
- 238000000992 sputter etching Methods 0.000 claims description 18
- 230000035515 penetration Effects 0.000 claims description 11
- 239000011521 glass Substances 0.000 claims description 8
- 238000004026 adhesive bonding Methods 0.000 claims description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 4
- 229910052710 silicon Inorganic materials 0.000 claims description 4
- 239000010703 silicon Substances 0.000 claims description 4
- 239000003292 glue Substances 0.000 abstract 1
- 238000012545 processing Methods 0.000 description 7
- 238000010586 diagram Methods 0.000 description 4
- 238000005259 measurement Methods 0.000 description 3
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000011109 contamination Methods 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 229920006332 epoxy adhesive Polymers 0.000 description 2
- 239000003822 epoxy resin Substances 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- -1 copper metals Chemical class 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005672 electromagnetic field Effects 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
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- Analysing Materials By The Use Of Radiation (AREA)
Abstract
This invention relates to transparent electron microscopes lens process method, which comprises the following steps: providing a baseboard and one artificial baseboard, wherein the first edge of the baseboard has one observation area and the second edge area doesn't have copper metal; then bonding the first edge sidewall and the second edge sidewall by one glue materials; finally deducing the observation area by one ion beam from the baseboard to the artificial baseboard.
Description
Technical field
The invention relates to a kind of preparation method of test piece of penetration type electron microscope, and particularly relevant for a kind of preparation method with test piece of copper metal interconnecting.
Background technology
The arithmetic speed of integrated circuit is the main points that each manufacturer must strive always, simultaneously also is one of buyer's important parameter when selecting.In integrated circuit, the resistance capacitance time delay that metal interconnecting caused (RC Time Delay) can seriously influence its arithmetic speed, and one of wherein improvement method is selected the next material as metal interconnecting of low-resistance metal material for use.Because the copper metal itself has many advantages, for example: (1) low resistance: the resistance value of copper metal is about 1.67 μ Ω-cm, is low than aluminum metal; (2) anti-electrical transfer ability is good: the copper metal is about 30 times to 100 times of aluminum metal; And (3) good thermal conductance etc., adding the copper metal can grow up to modes such as chemical vapour deposition (CVD) and plating.Therefore, copper metal interconnecting processing procedure gradually becomes the advanced process technology that each integrated circuit factory is adopted.
(electron microscope EM) is meant that the principle of utilizing electromagnetic field deviation, focused electron and electronics and material scattering that effect produces studies the precision instrument of material structure and fine structure to electron microscope.In various electron microscope, transmission electron microscope (Transmission Electron Microscope, TEM), owing to have non-parallel analytic ability and to characteristics such as interface level measurements sensitivity especially, therefore whether be more suitable for observing and measure above-mentioned copper metal interconnecting, it is good for example to observe the ladder covering (step coverage) of measuring the copper metal.
The principle of transmission electron microscope is to pass test piece with electronics, and through the lens enlarge-effect of electromagnetic lens system and obtain powerful image.Because it is limited that electronics can penetrate the thickness of test piece, so test piece must pass through special preparation method earlier and make its thickness attenuation, could observe measurement with transmission electron microscope.
Figure 1A is known test piece preparation method's a flow chart, and Figure 1B is the side schematic view of known test piece, and below explanation please be simultaneously with reference to Figure 1A and Figure 1B.At first, one first substrate 112 and one second substrate 114 are provided, wherein first edge of first substrate 112 has one first and waits to observe district (interesting area) 122, and second edge of second substrate 114 also has one second and waits to observe district's 124 (steps 102).Then, coat next bonding first substrate 112 of sidewall and second substrate 114 (step 104) at first edge and second edge with glueing material 116.At last, machinery grinds (mechanical polish) first substrate 112 and second substrate 114 (step 106) earlier, make its thickness be kept to about 20 microns (micrometer, μ m) after, wait to observe with ion beam (ionbeam) 132a, 132b, 134a and the 134b ion milling first of different directions again and distinguish 122 and second thickness of waiting to observe district 124, so promptly finish the preparation of the test piece of transmission electron microscope to about 0.1 micron.
Fig. 1 C is the schematic diagram of known ion milling equipment.Known ion milling equipment comprises a rotating disk 136, and two ion guns (ion gun) 132 and 134 that lay respectively at the top and the below of rotating disk 136.When carrying out the ion milling processing procedure, first substrate 112 and second substrate 114 are placed on the rotating disk 136, rotation along with rotating disk 136, ion gun 132 and 134 both alternately launch ion beam 132a, 134a, 132b and 134b and wait to observe the thickness that district 122 and second waits to observe district 124 with ion milling first, shown in Figure 1B and Fig. 1 C.
But, if observing in the district 122 and 124, above-mentioned waiting have the copper metal interconnecting, then the known ion milling processing procedure of this kind but can cause the deposited copper metal again and pollute the problem of test piece.Fig. 2 knownly waits that to what have a copper metal interconnecting observing the district carries out the schematic diagram of ion milling processing procedure.As shown in Figure 2, because the adhesion strength of copper metal is stronger, after the atom on copper metal interconnecting 202 surfaces is bombarded by ion beam 204, but be difficult for fully breaking away from copper metal interconnecting 202, can form deposition (re-deposited) copper metals 206 again on copper metal interconnecting 202 surfaces of the opposition side of ion beam 204 source directions on the contrary.Therefore transmission electron microscope also can't be difficult to it is made effective analysis from being obtained Useful Information the test piece that deposited copper metal 206 pollutes again.
Summary of the invention
Therefore purpose of the present invention is exactly that a kind of preparation method of test piece of penetration type electron microscope is being provided, distinguish in order to avoid when carrying out ion milling, polluting the observation for the treatment of with copper metal interconnecting, make transmission electron microscope can correctly observe measurement and wait to observe the district, and it is made effective analysis.
According to above-mentioned purpose of the present invention, a kind of preparation method of test piece of penetration type electron microscope is proposed.At first, provide a substrate and a puppet (dummy) substrate, wherein one first edge of this substrate has and waits to observe the district, and one second edge that should the puppet substrate does not have the copper metal.With the sidewall at bonding this first edge of a glueing material and the sidewall at this second edge.At last, with at least one ion beam from this substrate the direction ion milling to this puppet substrate this wait to observe the district, so can finish the preparation of test piece of penetration type electron microscope.
According to a preferred embodiment of the present invention, utilize epoxy resin (epoxy) adhesive adhesive base plate and pseudo-substrate, the waiting to observe in the district and have the copper metal interconnecting of this substrate wherein, and should the puppet substrate be selected from glass substrate and silicon substrate one of them.In this preferred embodiment, when the number in order to the ion beam that carries out the ion milling processing procedure was twice, this two ion beam was arranged at the top and the below in this observation district respectively.Moreover this preparation method also is included in ion milling, and this waits to observe before the district, and machinery grinds the thickness of this substrate of attenuate earlier.
Preparation method of the present invention replaces known two combinations that have the substrate of waiting to observe the district with pseudo-substrate and the combination with substrate, and require the ion beam must be according to substrate to the direction incident of pseudo-substrate, make the atom on copper metal interconnecting surface and after peeling off, can only be deposited on not tool and wait to observe on the pseudo-substrate in district by ion beam bombardment.So, treating on the substrate observed the district can be by deposited copper metallic pollution again, and therefore transmission electron microscope can obtain Useful Information from attenuate and free of contamination test piece, and it is made effective analysis.
Description of drawings
For above and other objects of the present invention, feature and advantage can be become apparent, a preferred embodiment cited below particularly, and cooperate appended graphicly, be described in detail below:
Figure 1A is known test piece preparation method's a flow chart;
Figure 1B is the side schematic view of known test piece;
Fig. 1 C is the schematic diagram of known ion milling equipment;
Fig. 2 knownly waits that to what have a copper metal interconnecting observing the district carries out the schematic diagram of ion milling processing procedure;
Fig. 3 A is a preparation method's of the present invention flow chart;
Fig. 3 B is the side schematic view of a preferred embodiment of test piece of the present invention; And
Fig. 3 C is the side schematic view of another preferred embodiment of test piece of the present invention.
Embodiment
Fig. 3 A is a preparation method's of the present invention flow chart, and Fig. 3 B is the side schematic view of a preferred embodiment of test piece of the present invention, and below explanation please be simultaneously with reference to Fig. 3 A and Fig. 3 B.At first, provide a substrate 112 and a glass substrate 314a, wherein one first edge of substrate 112 has and waits to observe district 122, and one second edge of glass substrate 314a does not have copper metal (step 302).With glueing material, for example epoxy resin (epoxy) adhesive 316 again, and the sidewall of coating first edge and second edge comes adhesive base plate 112 and glass substrate 314a (step 304).At last, mechanical lapping substrate 112 and glass substrate 314a (step 306), make its thickness be kept to about 20 microns (micrometer, μ m) after, wait to observe the top and the below in district 122 more respectively by this, the direction from substrate 112 to this glass substrate 314a with two ion beam 332a and 334a, this thickness of waiting to observe district 122 of ion milling is promptly finished the preparation of the test piece of transmission electron microscope to about 0.1 micron.
Employed pseudo-substrate is glass substrate 314a in this preferred embodiment, and according to other embodiments of the invention, the pseudo-substrate of other material also can apply among the present invention, as long as it is not in order to have any copper metal material with the bonding edge of substrate 112.Fig. 3 C is the side schematic view of another preferred embodiment of test piece of the present invention.In this preferred embodiment, pseudo-substrate is silicon substrate 314b, and its edge adjacent with waiting to observe district 122 does not have any copper metal, therefore can apply among the present invention yet.Therefore moreover the material of the material of silicon substrate 314b and substrate 112 is close, and when mechanical lapping after carrying out or ion milling processing procedure, the thickness of both attenuates can be more close, and also help to improve the quality of attenuate.
The incident direction of preparation method's special requirement ion beam of the present invention must along from substrate to the direction incident of pseudo-substrate, but be deposited on copper metal interconnecting surface again after being stripped from the atom of avoiding copper metal interconnecting surface and pollute and wait to observe the district.Yet the incident direction that the present invention does not limit ion beam must be parallel to the direction to pseudo-substrate from substrate fully, and deflection one angle is not violated spirit of the present invention and scope between the two.
Moreover in the above-described embodiment, ion beam 332a and 334a are disposed at top and the below of waiting to observe district 122 respectively in mode one on the other.Yet as long as the incident direction requirement according to the invention of ion beam, the present invention is when the quantity and the position of visual process requirement and device design change ion beam, with the preparation process of optimization test piece.
In addition, except solving that known copper metal interconnecting deposits when the ion milling easily again and the problem that pollutes, according to principle of the present invention, have other the strong metal of adhesion strength or the substrate of semi-conducting material, also can use preparation method of the present invention to prepare test piece, produce to avoid again deposition problems.
The atom that preparation method of the present invention makes copper metal interconnecting surface is by ion beam bombardment and after peeling off, and can only be deposited on not tool and wait to observe on the pseudo-substrate in district.So, treating on the substrate observed the district can be by deposited copper metallic pollution again, and therefore transmission electron microscope can obtain Useful Information behind attenuate and the free of contamination test piece, and it is made effective analysis.
Claims (6)
1. the preparation method of a test piece of penetration type electron microscope comprises at least
One substrate and a pseudo-substrate are provided, and wherein one first edge of this substrate has and waits to observe the district, and one second edge that should the puppet substrate does not have the copper metal;
With the sidewall at bonding this first edge of a glueing material and the sidewall at this second edge; And
This waits to observe the district with the ion beam ion milling, and described ion beam must the direction incident to this puppet substrate from this substrate.
2. the preparation method of test piece of penetration type electron microscope as claimed in claim 1, wherein should the puppet substrate be selected from a glass substrate and a silicon substrate one of them.
3. the preparation method of test piece of penetration type electron microscope as claimed in claim 1, wherein this is waited to observe the district and has the copper metal interconnecting.
4. the preparation method of test piece of penetration type electron microscope as claimed in claim 1, wherein this glueing material is an epoxyn.
5. the preparation method of test piece of penetration type electron microscope as claimed in claim 1, wherein when the number of this ion beam was twice, this two ion beam was arranged at the top and the below in this observation district respectively.
6. the preparation method of test piece of penetration type electron microscope as claimed in claim 1, wherein this preparation method also is included in ion milling this waits to observe before the district, and machinery grinds this substrate earlier.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2003101216344A CN100485848C (en) | 2003-12-31 | 2003-12-31 | Method for preparing transmission electron microscope test piece |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2003101216344A CN100485848C (en) | 2003-12-31 | 2003-12-31 | Method for preparing transmission electron microscope test piece |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1635599A CN1635599A (en) | 2005-07-06 |
| CN100485848C true CN100485848C (en) | 2009-05-06 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB2003101216344A Expired - Lifetime CN100485848C (en) | 2003-12-31 | 2003-12-31 | Method for preparing transmission electron microscope test piece |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN100485848C (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5015241B2 (en) * | 2007-04-18 | 2012-08-29 | 株式会社アルバック | Dummy substrate and method for starting film forming apparatus using the same, method for maintaining / changing film forming conditions, and stopping method |
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2003
- 2003-12-31 CN CNB2003101216344A patent/CN100485848C/en not_active Expired - Lifetime
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| Publication number | Publication date |
|---|---|
| CN1635599A (en) | 2005-07-06 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| ASS | Succession or assignment of patent right |
Owner name: SEMICONDUCTOR MANUFACTURING INTERNATIONAL (BEIJING Effective date: 20111123 |
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| C41 | Transfer of patent application or patent right or utility model | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20111123 Address after: 201203 No. 18 Zhangjiang Road, Shanghai Co-patentee after: Semiconductor Manufacturing International (Beijing) Corp. Patentee after: SEMICONDUCTOR MANUFACTURING INTERNATIONAL (SHANGHAI) Corp. Address before: 201203 Shanghai Zhangjiang Road, Zhangjiang High Tech Park of Pudong New Area No. 18 Patentee before: SEMICONDUCTOR MANUFACTURING INTERNATIONAL (SHANGHAI) Corp. |
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| CX01 | Expiry of patent term |
Granted publication date: 20090506 |
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| CX01 | Expiry of patent term |