CN100485501C - Pixel structure and liquid crystal display panel - Google Patents
Pixel structure and liquid crystal display panel Download PDFInfo
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- CN100485501C CN100485501C CNB200610007811XA CN200610007811A CN100485501C CN 100485501 C CN100485501 C CN 100485501C CN B200610007811X A CNB200610007811X A CN B200610007811XA CN 200610007811 A CN200610007811 A CN 200610007811A CN 100485501 C CN100485501 C CN 100485501C
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- pixel electrode
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- dot structure
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Abstract
This invention relates to a sort of pixel construction, which included scanning line, data line, the first thin-film transistor, the second thin-film transistor, the first pixel electrode and the second pixel electrode. The first thin-film transistor has first element broad and long ratio, and which connecting with scanning line and data Line. The second thin-film transistor has second element broad and long ratio, and which connecting with scanning line and data Line. In addition, the first pixel electrode connected with the first thin-film transistor. The second pixel electrode connected with the second thin-film transistor.
Description
Technical field
The present invention relates to a kind of dot structure and have the display panels of this dot structure, and be particularly related to a kind of display panels and dot structure thereof that can improve colour cast (color shift) phenomenon.
Background technology
Thin Film Transistor-LCD (TFT-LCD) because have that high image quality, space utilization efficient are good, low consumpting power, advantageous characteristic such as radiationless, thereby become the main flow in market gradually.At present, market is towards characteristics such as height contrast (High Contrast Ratio), rapid reaction and wide viewing angles for the performance requirement of LCD.Can reach the technology of wide viewing angle requirement at present, multi-zone vertical alignment nematic (Multi-domain Vertically Alignment is for example arranged, MVA) Thin Film Transistor-LCD, multiple domain horizontal direction matching (Multi-domain Horizontal Alignment, MHA) Thin Film Transistor-LCD or the like.
Though the Thin Film Transistor-LCD of multi-zone vertical alignment nematic or horizontal direction matching can reach the purpose of wide viewing angle, there is the problem of colour cast (color shift) in it also is for This is what people generally disapprove of.So-called colour cast refers to as the user when watching the shown image of display, can see the image of different color contrast with the different angles of viewing and admiring, and for example the user can see white partially image when watching than the angle of deflection.
Present someone proposes to solve the method for above-mentioned colour cast, and wherein a kind of method is to form two kinds of liquid crystal capacitances in single dot structure, makes in the single dot structure and produces different Liquid Crystal Molecules Alignment because of different liquid crystal capacitances.Though this kind mode can be improved color offset phenomenon, the shortcoming of this kind mode is that final briliancy is not enough and to poor.
Another kind method is to form independently capacitor of two sweep traces, two transistors and two in single dot structure, so that produce different Liquid Crystal Molecules Alignment because of the different storage capacitors of two capacitors in the single dot structure.Though this kind mode can solve color offset phenomenon and improve the problem of final briliancy deficiency, but because need in single dot structure, form independently capacitor of two sweep traces, two transistors and two, therefore necessary customized suitable driving circuit in addition, but also aperture opening ratio is descended.
Summary of the invention
The present invention's purpose provides a kind of dot structure, utilizes the display panels of this kind structure can reduce the phenomenon of colour cast.
Another object of the present invention provides a kind of display panels, and it is except the problem that can solve colour cast, and the problem that does not have final briliancy deficiency, poor and aperture opening ratio is descended.
For reaching above-mentioned or other purpose, the present invention proposes a kind of dot structure, and it comprises sweep trace, data line, the first film transistor, second thin film transistor (TFT), first pixel electrode and second pixel electrode.The first film transistor has first element broad and long ratio, and second thin film transistor (TFT) has second element broad and long ratio.The first film transistor and second thin film transistor (TFT) and identical sweep trace and data line electrical connection, and first element broad and long ratio of the first film transistor is greater than second element broad and long ratio of second thin film transistor (TFT).In addition, first pixel electrode is electrically connected with the first film transistor, and second pixel electrode is to be electrically connected with second thin film transistor (TFT).
In one of the present invention embodiment, also include orientation slit (slit) pattern in the first above-mentioned pixel electrode and second pixel electrode.In one embodiment, orientation slit pattern is a plurality of slits that are parallel to sweep trace.
In one of the present invention embodiment, this dot structure also comprises the orientation raised design, is arranged on first pixel electrode and second pixel electrode.
In one of the present invention embodiment, this dot structure also comprises reservior capacitor, be arranged at first pixel electrode and second pixel electrode under.
In one of the present invention embodiment, above-mentioned first pixel electrode and second pixel electrode are transparency electrodes.
In one of the present invention embodiment, above-mentioned first pixel electrode and second pixel electrode are reflecting electrodes.
In one of the present invention embodiment, one of them is reflecting electrode and another is a transparency electrode for the first above-mentioned pixel electrode and second pixel electrode.
The present invention proposes a kind of display panels in addition, it comprise thin-film transistor array base-plate, be arranged at the colored optical filtering substrates of thin-film transistor array base-plate subtend and be arranged at thin-film transistor array base-plate and colored optical filtering substrates between liquid crystal layer.Thin-film transistor array base-plate has a plurality of dot structures, and particularly, each dot structure comprises sweep trace, data line, the first film transistor, second thin film transistor (TFT), first pixel electrode and second pixel electrode.The first film transistor has first element broad and long ratio, and second thin film transistor (TFT) has second element broad and long ratio.The first film transistor and second thin film transistor (TFT) and identical sweep trace and data line electrical connection, and first element broad and long ratio of the first film transistor is greater than second element broad and long ratio of second thin film transistor (TFT).In addition, first pixel electrode is electrically connected with the first film transistor, and second pixel electrode is to be electrically connected with second thin film transistor (TFT).
In one of the present invention embodiment, also include the orientation slit pattern in first pixel electrode of each dot structure and second pixel electrode.In addition, on colored optical filtering substrates, also comprise and be provided with the orientation raised design.In another embodiment of the present invention, above-mentioned orientation slit pattern is a plurality of slits that are parallel to sweep trace.
In one of the present invention embodiment, also comprise on the above-mentioned thin-film transistor array base-plate being provided with the orientation raised design, be positioned on first pixel electrode and second pixel electrode.In addition, also comprise on the colored optical filtering substrates and be provided with the orientation slit pattern.
In one of the present invention embodiment, each dot structure also comprises reservior capacitor, be arranged at first pixel electrode and second pixel electrode under.
In one of the present invention embodiment, first pixel electrode and second pixel electrode of each dot structure are transparency electrodes.
In one of the present invention embodiment, above-mentioned first pixel electrode and second pixel electrode are reflecting electrodes.
In one of the present invention embodiment, one of them is reflecting electrode and another is a transparency electrode for the first above-mentioned pixel electrode and second pixel electrode.
The present invention is provided with two thin film transistor (TFT)s with different elements width/length ratio in single dot structure, and these two thin film transistor (TFT)s are to be electrically connected to identical sweep trace and data line.When driving these two thin film transistor (TFT)s with this sweep trace and data line, can in two pixel electrodes that it was electrically connected, produce two kinds of different pixel electrode voltages respectively, thereby can make the liquid crystal molecule in the single dot structure produce different Liquid Crystal Molecules Alignment.Thus, just can solve the problem of colour cast.
State with other purpose, feature and advantage and can become apparent on the present invention for allowing, preferred embodiment cited below particularly, and conjunction with figs. are described in detail below.
Description of drawings
Fig. 1 is the schematic top plan view according to a kind of dot structure of one of the present invention preferred embodiment.
Fig. 2 is the diagrammatic cross-section along the I-I ' of Fig. 1.
Fig. 3 is the schematic top plan view according to a kind of dot structure of another preferred embodiment of the present invention.
Fig. 4 is the diagrammatic cross-section according to a kind of display panels of one of the present invention preferred embodiment.
Fig. 5 is the diagrammatic cross-section according to a kind of display panels of another preferred embodiment of the present invention.
The main element description of symbols
10,20: dot structure
100,150: substrate
102: sweep trace
103: gate insulation layer
104: data line
106: the first film transistor
108: the second thin film transistor (TFT)s
110: the first pixel electrodes
112: the second pixel electrodes
111,113: contact hole
114: common electrode
116,160: the orientation slit
132,134: channel layer
136a, 138a: drain electrode
136b, 138b: source electrode
152: black matrix
154: chromatic filter layer
156: electrode layer
158,162: the orientation projection
200: thin-film transistor array base-plate
300: colored optical filtering substrates
400: liquid crystal layer
W1, W2: element width
L1, L2: leement duration
Embodiment
Fig. 1 is the schematic top plan view according to a kind of dot structure of one of the present invention preferred embodiment.Fig. 2 is the diagrammatic cross-section along the I-I ' of Fig. 1.Please be simultaneously with reference to Fig. 1 and Fig. 2, the present invention's dot structure 10 comprises sweep trace 102, data line 104, the first film transistor 106, second thin film transistor (TFT) 108, first pixel electrode 110 and second pixel electrode 112.
Sweep trace 102 and data line 104 are to be arranged on the substrate 100, and sweep trace 102 can be electrically connected with second thin film transistor (TFT) 108 with the first film transistor 106 with data line 104.The first film transistor 106 comprises grid (being the part of sweep trace 102), cover gate insulation layer 103 on the grid, be arranged at the channel layer 132 on the gate insulation layer 103 and be positioned at drain electrode 136a and source electrode 136b on the channel layer 132.Second thin film transistor (TFT) 108 comprises grid (being the part of sweep trace 102), cover gate insulation layer 103 on the grid, be arranged at the channel layer 134 on the gate insulation layer 103 and be positioned at drain electrode 138a and source electrode 138b on the channel layer 134.
Therefore, the first film transistor 106 and second thin film transistor (TFT) 108 all are formed on the sweep trace 102, and with the part of sweep trace 102 as its grid.And the source electrode 138b of the source electrode 136b of the first film transistor 106 and second thin film transistor (TFT) 108 is connected to data line 104.Therefore two thin film transistor (TFT)s the 106, the 108th, common identical sweep trace 102 and the identical data line 104 of being electrically connected to.
Particularly, the first film transistor 106 has first element broad and long ratio, and second thin film transistor (TFT) 108 has second element broad and long ratio.In a preferred embodiment, first element broad and long ratio of the first film transistor 106 is greater than second element broad and long ratio of second thin film transistor (TFT) 108.More detailed explanation is, the leement duration of the first film transistor 106 is that L1 and element width are W1, and the leement duration of second thin film transistor (TFT) 108 be L2 and element width is W2, and first element broad and long ratio (W1/L1) can see that width/length is than (W2/L2) greater than second yuan.
In addition, on the first film transistor 106 and second thin film transistor (TFT) 108, also comprise and be coated with protective seam 109.First pixel electrode 110 and second pixel electrode 112 are formed on protective seam 109 surfaces.First pixel electrode 110 can be electrically connected with the first film transistor 106, and it for example is to be electrically connected to each other through contact hole 111.Second pixel electrode 112 can be electrically connected with second thin film transistor (TFT) 108, and it for example is to be electrically connected to each other through contact hole 113.In one embodiment, first pixel electrode 110 and second pixel electrode 112 are respectively the both sides that are positioned at data line 104, and two pixel electrodes, 110,112 separated from one another coming.First pixel electrode 110 and second pixel electrode 112 for example are respectively transparency electrodes.Certainly, it must be transparency electrode that the present invention does not limit two pixel electrodes 110,112, and it can also be a reflecting electrode, or one of them another is a reflecting electrode for transparency electrode.
According to one of the present invention preferred embodiment, this dot structure 10 also comprises common electrode 114, it is arranged under first pixel electrode 110 and second pixel electrode 112, common electrode 114 can produce capacitive coupling with first pixel electrode 110 and second pixel electrode 112 respectively, with the storage capacitors as dot structure 10.
Particularly, because the element broad and long ratio of the first film transistor 106 and second thin film transistor (TFT) 108 is inequality, therefore when sweep trace 102 drove dot structure 10 with data line 104, the voltage of importing first pixel electrode 110 and second pixel electrode 112 can be inequality.Therefore, the present invention is inequality because of the element broad and long ratio of the design the first film transistor 106 and second thin film transistor (TFT) 108, thereby can produce two kinds of pixel electrode voltages in single dot structure 10 under situation about driving with same sweep trace 102 and data line 104.
And if when being applied in this kind dot structure in the display panels, can be so that the liquid crystal molecule that is positioned at the liquid crystal molecule of first pixel electrode, 110 tops and is positioned at second pixel electrode, 112 tops has different arrangement modes.Therefore, the present invention can so can solve the problem that display panels has colour cast so that the liquid crystal molecule in the single dot structure 10 has two kinds of different arrangement modes.
Fig. 3 is the schematic top plan view according to a kind of dot structure of another preferred embodiment of the present invention.Dot structure shown in Figure 3 is a kind of dot structure 20 that is applied to liquid crystal display panel with wide visual angle, the dot structure 10 of itself and Fig. 1 is similar, and difference is that it all also comprises and is formed with orientation slit pattern 116 in first pixel electrode 110 and second pixel electrode 112.And orientation slit pattern 116 shown in Figure 3 is alignment pattern designs of a kind of multiple domain horizontal direction matching type, and it is made of a plurality of slits that are parallel to sweep trace 102.But the present invention does not limit the arrangement and the shape of orientation slit pattern 116, and it can also be the alignment pattern of multidomain vertical alignment type, or other kind alignment pattern changes.
If the present invention's dot structure 20 is applied in the display panels, except the purpose that can reach wide viewing angle, can also eliminate the problem that there is high colour cast in traditional wide-angle liquid crystal display.In addition, because the present invention is a difference of utilizing the element broad and long ratio of thin film transistor (TFT), and make single dot structure have different pixel electrode voltages, this kind mode can not cause final briliancy deficiency and contrast relatively poor problem.In addition, the present invention only uses data line, sweep trace and capacitance electrode in single dot structure, so the design of its driving circuit and general dot structure there is no differently, thereby does not need the special driving circuit of design in addition.And, because only use data line, sweep trace and capacitance electrode in the single dot structure, therefore aperture opening ratio is obviously reduced.
Below will elaborate at above-mentioned dot structure is applied in the display panels.
Fig. 4 is the diagrammatic cross-section according to a kind of display panels of one of the present invention preferred embodiment.Please refer to Fig. 4, the display panels of present embodiment comprises thin-film transistor array base-plate 200, colored optical filtering substrates 300 and the liquid crystal layer 400 between thin-film transistor array base-plate 200 and colored optical filtering substrates 300.Thin-film transistor array base-plate 200 includes a plurality of dot structures, and it can be as Fig. 1 or dot structure 10 or 20 shown in Figure 3, is that the dot structure 20 with Fig. 3 is that example explains in Fig. 4.Therefore structure shown in Figure 4 is a kind of liquid crystal display panel with wide visual angle.And if the dot structure of thin-film transistor array base-plate 200 be as shown in Figure 1 dot structure 10 not comprise in display panels just being provided with orientation projection/slit pattern that then this kind display panels for example is the torsional mode display panels.
Please refer to Fig. 4, the dot structure of thin-film transistor array base-plate 200 comprises first and second thin film transistor (TFT) 106,108 and first and second pixel electrode 110,112, wherein the first film transistor 106 comprises grid 102, channel layer 132, source electrode 136b and drain electrode 136a, and second thin film transistor (TFT) 108 comprises grid 102, channel layer 134, source electrode 138b and drain electrode 138a.First pixel electrode 110 is to be electrically connected with drain electrode 136a through contact hole 111, and second pixel electrode 112 is to be electrically connected with drain electrode 138 through contact hole 113.In addition, in first and second pixel electrode 110,112, also comprise and be formed with orientation slit pattern 116.
In addition, colored optical filtering substrates 300 comprises substrate 150, is arranged at black matrix 152 and chromatic filter layer 154 and electrode layer 156 on the substrate 150.Chromatic filter layer 154 for example is made of red, green, blue look filter pattern.The material of black matrix 152 for example is metal or black resin.And electrode layer 156 is to cover on black matrix 152 and chromatic filter layer 154 surfaces, its in order to and thin-film transistor array base-plate 200 on pixel electrode 110,112 between produce electric field so that liquid crystal molecule 400 produces and reverses and reach the purpose of demonstration.In one embodiment, also comprise orientation raised design 158 on the colored optical filtering substrates 300, be arranged on the electrode layer 156.Particularly, the arrangement of orientation raised design 158 can be arranged in pairs or groups with orientation slit pattern 116, to reach the purpose of multiple domain orientation.For example, if the arrangement of orientation slit pattern 116 is as shown in Figure 3, be that orientation slit pattern 116 is made of a plurality of slits that are parallel to sweep trace 102, then the arrangement of orientation raised design 158 then for example is the position setting of respective data lines 108 and sweep trace 102, to constitute the structure of multiple domain horizontal direction matching.
Certainly, the present invention does not limit the arrangement and the shape of orientation raised design 158 and orientation slit pattern 116, and it also can be the structure of multi-zone vertical alignment nematic, or other kind variation.
In addition, it is slit pattern that the present invention does not also limit the alignment pattern that is arranged on the thin-film transistor array base-plate 200, and it can also be the orientation raised design, as shown in Figure 5.Display panels and Fig. 4 shown in Figure 5 are similar, and it on first and second pixel electrode 110,112 is orientation raised design 162 that difference is to be arranged at.In addition, in the electrode layer 156 of colored optical filtering substrates 300, be formed with orientation slit pattern 160.Same, the arrangement of orientation raised design 162 can be arranged in pairs or groups with orientation slit pattern 160, to constitute multiple domain horizontal or vertical orientation structure.
In the described display panels of the foregoing description, no matter be to be in display panels or the multi-field vertical assigned LCD panel at torsional mode display panels, multiple domain horizontal direction matching, each dot structure on its thin-film transistor array base-plate includes two thin film transistor (TFT)s and two pixel electrodes, and two thin film transistor (TFT)s in the single dot structure have different element broad and long ratio, and two transistor all is to be electrically connected with same data line and same sweep trace.Therefore, when data line and this dot structure of scanning line driving, because two thin film transistor (TFT)s have different element broad and long ratio, therefore will make that two pixel electrodes in this dot structure have different pixel electrode voltages, thereby can make liquid crystal molecule that two kinds of different arrangement modes are arranged, and then can improve the problem of colour cast in single dot structure.
In addition, the present invention only uses data line, sweep trace and capacitance electrode in single dot structure, so the design of its driving circuit and general dot structure there is no differently, thereby does not need the special driving circuit of design in addition.And, because only use data line, sweep trace and capacitance electrode in the single dot structure, therefore aperture opening ratio is obviously reduced.
Though the present invention discloses as above with preferred embodiment; right its is not in order to limit the present invention; any person of ordinary skill in the field; without departing from the spirit and scope of the invention; when can doing a little change and improvement, so the present invention's protection domain is as the criterion when looking the claim person of defining.
Claims (18)
1. dot structure is characterized in that comprising:
Sweep trace and data line;
The first film transistor, it has first element broad and long ratio;
Second thin film transistor (TFT), it has second element broad and long ratio;
First pixel electrode, it is electrically connected with this first film transistor; And
Second pixel electrode, it is electrically connected with this second thin film transistor (TFT);
Wherein, this first film transistor is electrically connected to identical sweep trace and identical data line with this second thin film transistor (TFT), and this first element broad and long ratio of this first film transistor is greater than this second element broad and long ratio of this second thin film transistor (TFT).
2. the dot structure according to claim 1 is characterized in that also including the orientation slit pattern in this first pixel electrode and this second pixel electrode.
3. the dot structure according to claim 2 is characterized in that this orientation slit pattern is a plurality of slits that are parallel to this sweep trace.
4. the dot structure according to claim 1 is characterized in that also comprising the orientation raised design, is arranged on this first pixel electrode and this second pixel electrode.
5. the dot structure according to claim 1 is characterized in that also comprising reservior capacitor, be arranged at this first pixel electrode and this second pixel electrode under.
6. the dot structure according to claim 1 is characterized in that this first pixel electrode and this second pixel electrode are transparency electrodes.
7. the dot structure according to claim 1 is characterized in that this first pixel electrode and this second pixel electrode are reflecting electrodes.
8. the dot structure according to claim 1, one of them is a reflecting electrode and another is a transparency electrode to it is characterized in that this first pixel electrode and this second pixel electrode.
9. display panels is characterized in that comprising:
Thin-film transistor array base-plate, it has a plurality of dot structures, and wherein each dot structure comprises:
Sweep trace and data line;
The first film transistor, it has first element broad and long ratio;
Second thin film transistor (TFT), it has second element broad and long ratio, and this first film transistor is electrically connected to identical sweep trace and identical data line with this second thin film transistor (TFT), and this first element broad and long ratio of this first film transistor is greater than this second element broad and long ratio of this second thin film transistor (TFT);
First pixel electrode, it is electrically connected with this first film transistor;
Second pixel electrode, it is electrically connected with this second thin film transistor (TFT);
Colored optical filtering substrates is arranged at the subtend of this thin-film transistor array base-plate; And
Liquid crystal layer is arranged between this thin-film transistor array base-plate and this colored optical filtering substrates.
10. the display panels according to claim 9 is characterized in that also including the orientation slit pattern in this first pixel electrode of each dot structure and this second pixel electrode.
11. the display panels according to claim 10 is characterized in that also comprising on this colored optical filtering substrates being provided with the orientation raised design.
12. the display panels according to claim 10 is characterized in that this orientation slit pattern is a plurality of slits that are parallel to this sweep trace.
13. the display panels according to claim 9 is characterized in that also comprising on this thin-film transistor array base-plate being provided with the orientation raised design, is positioned on this first pixel electrode and this second pixel electrode.
14. the display panels according to claim 13 is characterized in that also comprising on this colored optical filtering substrates being provided with the orientation slit pattern.
15. the display panels according to claim 9 is characterized in that each dot structure also comprises reservior capacitor, be arranged at this first pixel electrode and this second pixel electrode under.
16. the display panels according to claim 9 is characterized in that this first pixel electrode of each dot structure and this second pixel electrode are transparency electrodes.
17. the display panels according to claim 9 is characterized in that this first pixel electrode of each dot structure and this second pixel electrode are reflecting electrodes.
18. the display panels according to claim 9, one of them is a reflecting electrode and another is a transparency electrode to it is characterized in that this first pixel electrode of each dot structure and this second pixel electrode.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB200610007811XA CN100485501C (en) | 2006-02-17 | 2006-02-17 | Pixel structure and liquid crystal display panel |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB200610007811XA CN100485501C (en) | 2006-02-17 | 2006-02-17 | Pixel structure and liquid crystal display panel |
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| Publication Number | Publication Date |
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| CN101025528A CN101025528A (en) | 2007-08-29 |
| CN100485501C true CN100485501C (en) | 2009-05-06 |
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| CNB200610007811XA Expired - Fee Related CN100485501C (en) | 2006-02-17 | 2006-02-17 | Pixel structure and liquid crystal display panel |
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Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105445966B (en) * | 2014-08-18 | 2019-04-02 | 群创光电股份有限公司 | The display panel of low colour cast |
| KR20170117261A (en) * | 2016-04-12 | 2017-10-23 | 삼성디스플레이 주식회사 | Liquid crystal display device and method for fabricating the same |
| CN106129065B (en) * | 2016-07-15 | 2019-06-07 | 京东方科技集团股份有限公司 | A kind of array substrate and preparation method thereof, display panel |
| CN106019749B (en) * | 2016-08-03 | 2019-06-28 | 上海中航光电子有限公司 | Array substrate and display panel |
| TWI716676B (en) * | 2018-03-20 | 2021-01-21 | 友達光電股份有限公司 | Display panel |
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