CN100483712C - 发光二极管组件 - Google Patents
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- 239000010410 layer Substances 0.000 claims abstract description 30
- 239000000758 substrate Substances 0.000 claims abstract description 17
- 229910052751 metal Inorganic materials 0.000 claims abstract description 12
- 239000002184 metal Substances 0.000 claims abstract description 12
- 239000012790 adhesive layer Substances 0.000 claims abstract description 8
- 239000004020 conductor Substances 0.000 claims abstract description 5
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 claims description 11
- 229910052710 silicon Inorganic materials 0.000 claims description 9
- 239000010703 silicon Substances 0.000 claims description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 8
- 239000003086 colorant Substances 0.000 claims description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 6
- 238000009413 insulation Methods 0.000 claims description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 4
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- 229910052581 Si3N4 Inorganic materials 0.000 claims description 2
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- 238000004021 metal welding Methods 0.000 claims description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 2
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
- H01L33/641—Heat extraction or cooling elements characterized by the materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
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- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Led Device Packages (AREA)
Abstract
一种发光二极管(LED)组件,包括在一侧之上被部分覆盖了介电层(2)的金属衬底(1),在该介电层(2)上存在电路(3),和多个发光二极管单元(5,6,7),每一个包括发光二极管芯片,其中通过导热的粘合层(8)将每个发光二极管单元(5,6,7)设置在该金属衬底上的所述介电层中的间隙中,其中电导体(9)连接每个发光二极管单元和在相邻介电层上的电路,并且其中至少两个发光二极管单元一起被安装在该介电层中的一个间隙中。
Description
技术领域
本发明涉及发光二极管(LED)组件,其包括在一侧之上被覆盖了介电层的金属衬底,在该介电层上存在电路,和每一个都包括LED芯片的多个LED单元,其中通过导热粘合层将每个LED单元设置在该金属衬底上的所述介电层中的间隙中,并且其中电导体连接每个LED单元和在相邻介电层上的电路。
背景技术
在US 6,498,355中描述了这种LED组件。由于LED单元的靠近放置,功耗高并且散热可能是问题。LED单元变得太热,其导致LED尤其是红色LED的通量的严重减小。通过利用热沉,其包括金属衬底和导热的粘合层,可以在操作期间在不将LED的温度升高太多的情况下构建高功率LED组件。该介电层提供有间隙阵列,其均被做成一定形状以容纳LED单元,并且每个LED单元被连接到该介电层上的周围电路,例如借助线。WO 00/55925也描述了LED组件,其中通过导热胶将LED单元设置在铝衬底上的间隙中。
发明内容
期望提供具有最小尺寸的高功率复合LED光源。这尤其与投影型灯相关,例如聚光灯或探照灯,其中被LED使用的表面面积决定了用来使光束成形的光学器件的最小尺寸。而且,当利用不同颜色的多个LED来获得例如白光时,期望该光源呈现为白色,而不是不同颜色的阵列。
该目的通过一种LED组件来实现,其包括在一侧之上被覆盖了介电层的金属衬底,在该介电层上存在电路,和多个发光二极管单元,每一个都包括发光二极管芯片,其中通过导热的粘合层将每个发光二极管单元安装在该金属衬底上的所述介电层中的间隙中,其中每个发光二极管单元包括其上安装发光二极管芯片的硅基座,并且其中电导体连接每个发光二极管单元和在相邻介电层上的电路,所述硅基座包括电绝缘的顶层。另外,描述了本发明的LED组件的优选实施例。
根据本发明,至少两个LED单元一起被安装在介电层中的一个间隙中。在优选实施例中,多个LED单元被一起安装在一个间隙中。以这种方式可以在行或阵列中并排地放置这些LED,以便它们形成或多或少连续的发光表面。由此该光源的尺寸被最小化并且不同颜色的混合被最大化。线电连接该组LED单元与共用的相邻电路。每个LED单元可以具有它自己的至电路的布线,而且一组LED单元也可以通过线互连,以便这些LED单元被串联连接到电路。
在使用词“间隙”的地方,应当理解的是,这并不一定意味着该介电层完全将该间隙包围在其中。实际上,根据本发明,该介电层和其上的电路仅需要存在于LED单元的阵列的一侧上。
在优选实施例中,不同颜色的LED单元被安装在介电层中的一个间隙中。在工作期间,这些LED发射波长互不相同的光。至少一个LED芯片是例如A1InGaP芯片(红色、橙色或黄色)并且至少一个其它的LED芯片是例如InGaN芯片(绿色、蓝色或青色)。以这种方式,在混合所发射的具有不同波长的光之后,可以获得很小的白光源,或任何其它期望的颜色的光源。
借助导电的粘合层,该LED芯片优选被安装在硅基座(sub-mount)上,并且所述硅基座被安装在该金属衬底上。该硅基座在其中优选包括电绝缘氧化硅或氮化硅层。硅因为它的优良的热传导特性而众所周知。优选地该热传导粘合层是金属焊料层,因为焊料也被认为是好的热传导材料。由于同样的原因,优选地该金属衬底是铜或铝衬底。
附图说明
将参考附图借助示例性实施例来描述本发明,其中:
图1是LED组件的局部截面图;以及
图2是图1的LED组件的局部顶视图。
具体实施方式
该LED组件包括被提供有介电层2和铜电路3的铜或阳极化铝衬底1。间隙4被设置在所述层2中,其中十五个LED单元5、6、7通过焊料层8被直接安装在该衬底1上。在该实施例中,五行的两种A1InGaP LED单元5、7(例如红色和黄色)和五行的一种InGaN LED单元6(例如蓝色)均被放置在一个间隙4中。
每个LED单元5、6、7包括具有电绝缘氧化硅顶层10的硅基座9。在A1InGaP LED单元5、7中,基座9具有金属化的顶表面11,A1InGaP LED芯片14、16通过焊料层17被附着到其上。在InGaN LED单元6中,基座9具有两个分开的金属化的顶表面区域12、13,InGaNLED芯片15通过分开的焊料凸块18被附着到其上。
LED单元5、6、7被电连接到周围电路3并且借助接合线19彼此电连接。可以如所示通过所述线19串联地电连接LED芯片14、15、16,或者可替换地,每个LED芯片14、15、16可以通过线19(未示出)被单独连接到电路3。
在示出的实施例中,一个颜色的LED单元5、6、7位于图2中的一个垂直的行中。还可以在垂直的行中交替不同颜色的LED单元5、6、7,与图2中的水平行中的交替相似。这将导致该三种颜色的更好的混合。
将理解的是,所描述的实施例的多种变型将可以在本发明的范围之内。
Claims (8)
1.一种发光二极管(LED)组件,包括在一侧之上被覆盖了介电层(2)的金属衬底(1),在该介电层(2)上存在电路(3),和多个发光二极管单元(5,6,7),每一个都包括发光二极管芯片(14,15,16),其中通过导热的粘合层(8)将每个发光二极管单元(5,6,7)安装在该金属衬底(1)上的所述介电层(2)中的间隙(4)中,其中每个发光二极管单元(5,6,7)包括其上安装发光二极管芯片的硅基座(9),并且其中电导体(19)连接每个发光二极管单元和在相邻介电层(2)上的电路(3),其特征在于,所述硅基座包括电绝缘的顶层(10)。
2.根据权利要求1所述的发光二极管(LED)组件,其中所述电绝缘的顶层(10)包括氧化硅或氮化硅。
3.根据权利要求1或2所述的发光二极管(LED)组件,其中在介电层(2)中的一个间隙(4)中一起安装至少两个发光二极管单元
(5,6,7)。
4.根据权利要求3所述的发光二极管(LED)组件,其中不同颜色的发光二极管单元(5,6,7)被安装在该介电层(2)中的一个间隙(4)中。
5.根据权利要求3所述的发光二极管(LED)组件,其中该发光二极管芯片(14,15,16)是AlInGaP芯片和/或InGaN芯片。
6.根据前面权利要求1中所述的发光二极管(LED)组件,其中该导热的粘合层(8)是金属焊料层。
7.根据前面权利要求1中所述的发光二极管(LED)组件,其中该金属衬底(1)是铜或铝衬底。
8.根据前面权利要求1中所述的发光二极管(LED)组件,其中借助线(19)使至少两个发光二极管单元(5,6,7)彼此互连。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP04103584 | 2004-07-27 | ||
EP04103584.1 | 2004-07-27 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1989618A CN1989618A (zh) | 2007-06-27 |
CN100483712C true CN100483712C (zh) | 2009-04-29 |
Family
ID=35787497
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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CNB2005800253269A Expired - Fee Related CN100483712C (zh) | 2004-07-27 | 2005-07-19 | 发光二极管组件 |
Country Status (6)
Country | Link |
---|---|
US (1) | US20080290354A1 (zh) |
EP (1) | EP1774594A2 (zh) |
JP (1) | JP2008508706A (zh) |
CN (1) | CN100483712C (zh) |
TW (1) | TW200618345A (zh) |
WO (1) | WO2006013503A2 (zh) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4863203B2 (ja) * | 2006-04-28 | 2012-01-25 | スタンレー電気株式会社 | 半導体発光装置 |
US20090050921A1 (en) * | 2007-08-23 | 2009-02-26 | Philips Lumileds Lighting Company Llc | Light Emitting Diode Array |
US8567988B2 (en) * | 2008-09-29 | 2013-10-29 | Bridgelux, Inc. | Efficient LED array |
US7868347B2 (en) * | 2009-03-15 | 2011-01-11 | Sky Advanced LED Technologies Inc | Metal core multi-LED SMD package and method of producing the same |
US9034734B2 (en) * | 2013-02-04 | 2015-05-19 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Systems and methods for plasma etching compound semiconductor (CS) dies and passively aligning the dies |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS62279685A (ja) * | 1986-05-29 | 1987-12-04 | Iwasaki Electric Co Ltd | 発光素子配列体 |
JP3329573B2 (ja) * | 1994-04-18 | 2002-09-30 | 日亜化学工業株式会社 | Ledディスプレイ |
JPH088463A (ja) * | 1994-06-21 | 1996-01-12 | Sharp Corp | 薄型ledドットマトリックスユニット |
JPH10229221A (ja) * | 1997-02-17 | 1998-08-25 | Kouha:Kk | 発光ダイオード表示装置およびそれを利用した画像表示装置 |
JP2002084027A (ja) * | 2000-09-07 | 2002-03-22 | Sony Corp | 半導体発光装置 |
DE10051159C2 (de) * | 2000-10-16 | 2002-09-19 | Osram Opto Semiconductors Gmbh | LED-Modul, z.B. Weißlichtquelle |
CN1212676C (zh) * | 2001-04-12 | 2005-07-27 | 松下电工株式会社 | 使用led的光源装置及其制造方法 |
US6682211B2 (en) * | 2001-09-28 | 2004-01-27 | Osram Sylvania Inc. | Replaceable LED lamp capsule |
US6498355B1 (en) * | 2001-10-09 | 2002-12-24 | Lumileds Lighting, U.S., Llc | High flux LED array |
JP3960053B2 (ja) * | 2002-01-18 | 2007-08-15 | 松下電器産業株式会社 | 半導体発光装置及びこれを用いた照明用発光装置 |
JP2003347599A (ja) * | 2002-05-27 | 2003-12-05 | Seiwa Electric Mfg Co Ltd | 表示素子 |
JP2004014899A (ja) * | 2002-06-10 | 2004-01-15 | Para Light Electronics Co Ltd | 発光ダイオードチップの直列構造 |
JP2004030929A (ja) * | 2002-06-21 | 2004-01-29 | Toshiba Lighting & Technology Corp | Led装置およびled照明装置 |
DE10245892A1 (de) * | 2002-09-30 | 2004-05-13 | Siemens Ag | Beleuchtungseinrichtung zur Hinterleuchtung einer Bildwiedergabevorrichtung |
-
2005
- 2005-07-19 WO PCT/IB2005/052412 patent/WO2006013503A2/en active Application Filing
- 2005-07-19 JP JP2007523204A patent/JP2008508706A/ja active Pending
- 2005-07-19 EP EP05780679A patent/EP1774594A2/en not_active Withdrawn
- 2005-07-19 CN CNB2005800253269A patent/CN100483712C/zh not_active Expired - Fee Related
- 2005-07-19 US US11/572,582 patent/US20080290354A1/en not_active Abandoned
- 2005-07-22 TW TW094124986A patent/TW200618345A/zh unknown
Also Published As
Publication number | Publication date |
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JP2008508706A (ja) | 2008-03-21 |
WO2006013503A2 (en) | 2006-02-09 |
CN1989618A (zh) | 2007-06-27 |
TW200618345A (en) | 2006-06-01 |
US20080290354A1 (en) | 2008-11-27 |
WO2006013503A3 (en) | 2006-07-06 |
EP1774594A2 (en) | 2007-04-18 |
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