CN100483650C - Method for restraining edge breakdown of avalanche photodiode - Google Patents
Method for restraining edge breakdown of avalanche photodiode Download PDFInfo
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- CN100483650C CN100483650C CNB2007100285792A CN200710028579A CN100483650C CN 100483650 C CN100483650 C CN 100483650C CN B2007100285792 A CNB2007100285792 A CN B2007100285792A CN 200710028579 A CN200710028579 A CN 200710028579A CN 100483650 C CN100483650 C CN 100483650C
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Abstract
The method includes steps: (1) material of containing high aluminum component (AC) is selected for multiplier layer in structure of avalanche photodiode, material of containing no or low AC is selected for absorbing layer; (2) first, oxidizing material of containing high AC at lateral edge in the multiplier layer, and then making insulating layer of alumina expand to P type heavily doped area from lateral direction. The invention restrains edge breakdown by using insulating layer formed from selective oxidation reaction between water vapor etc of oxygen-containing material and multiplier layer material with high AC. Compared with traditional second diffusion, second growth, the disclosed technique is simpler. Accurate controlled length of oxidation, and formed insulating layer material prevent edge breakdown caused by effect of curvature in P diffusion area. The invention does not need to make specific structure (such as guard ring) so as to not limit size of chip.
Description
Technical field
The present invention relates to avalanche photodide, specifically, relate to a kind of method of restraining the avalanche photodide edge breakdown.
Background technology
Nearly in the past more than five since century, avalanche photo diode (APD) is widely used in the research of aspects such as commerce, military affairs and scientific research.Recent years, along with the fast development of optical communication industry, the photodetector of playing the part of receiver key player in the optical communication system is also developed rapidly.Receiver medium sensitivity is one of important index in the optical communication system, and the ionization that can bump of APD inside forms interior gain, than the excellent 5-10dBm of traditional photodiode (PIN) sensitivity, makes APD become the first-selection of receiver in the optical communication system.
From the transmission rate of the 2.5Gbit/s of traditional optical communication, the 40Gbit/s transmission rate is put on problem up till now, and high speed optical communication system is more and more higher to the requirement of receiver.Round to performance requirements such as device high bandwidth, low noises, the design of researcher from the developing material to the device architecture launched extensive studies.
At present for optical communicating waveband, commercial APD InGaAs material commonly used is as absorbed layer, the materials such as InP, InAlAs that mate mutually with the InGaAs material lattice are as dynode layer, the APD that separately absorbs multiplication (SCAM) structure that utilizes these material to become has good bandwidth characteristic, reports at present that the highest gain bandwidth product was 320GHz.But more and more littler along with device size, the electric field that bears on the device dynode layer is increasing, under high electric field, weigh important index of device noise characteristic, the ratio k of electronics ionization level and hole ionization level begins to trend towards 1, according to traditional theory when the k value trends towards 1, the noise characteristic variation of device.General electronics ionization level and hole ionization level are determined, are functions with electric field change for specific material, therefore improve the material that important approach of noise is exactly the change dynode layer.Theory and experimental study for the AlGaAs material shows at present, utilize the AlGaAs material of high aluminium component to make dynode layer and absorbed layer, the GaAs material has good noise characteristic as the PIN structure of substrate, particularly when the component of aluminium reaches 80%, even the k value still has 0.13 under small size, its noise characteristic is best.But owing to use the AlGaAs absorbed layer, the optical wavelength of reception is not at communication band.Recent years, material such as GaInNAs, GaNAs was owing to have excellent lattice matching with the GaAs material, can allow the wave band of its absorption drop on optical communications wavelength again by different components, was applied in widely in the research of laser.Studies show that with the GaAs material be substrate, is absorbed layer with the GaInNAs material, will be the important candidate of receiver in the optical communication system with the AlGaAs material of high aluminium component as the APD that separately absorbs with multiplication structure of dynode layer.
In the research of APD device architecture, traditional APD mainly contains two kinds of structure meas structures (mesa-type) and planarized structure (planar), and wherein the APD of mesa has advantages such as making simply, can repeat making; Compare with the APD of mesa, because the APD of plane buries PN junction in vivo, it has the stability of lower dark current and Geng Gao, but much complicated on technology realizes.The major issue that the APD of plane also has needs to solve prevents edge breakdown exactly: in the technological process of the APD that makes plane, because injecting the P district that forms, diffusion or ion have curvature effect, the electric field at edge is higher than the electric field of the PN junction of central authorities, therefore under high effect of electric field, the PN junction zone does not also reach the degree of ionization by collision, and the edge has punctured in advance.The method that tradition is restrained edge breakdown has multiple: a kind of is that side direction at device forms guard ring; this technology is to utilize in the chip growth course by when diffuseing to form the P district; utilize the method that ion injects or secondary spreads to inject certain density impurity in the side direction in P district; form a guard ring structure (GR), perhaps form two adjacent one dark one shallow guard ring structures (PLEG).The effect of guard ring is that it has reduced the curvature effect in P district, thereby effectively restrains the too high puncture that causes of P area edge electric field in the APD device.But this way is for absorbing the APD device of multiplication (SAM) structure respectively, owing to introduced guard ring, the space charge below ring sharply descends, the too high generation tunneling effect of absorbed layer electric field under causing easily encircling.Another kind of way is to form floating guard ring in device, and this way forms three the certain intervals window is arranged by photoetching technique is disposable on dynode layer, then by disposable heavily doped P district and two guard rings of diffuseing to form.This two guard rings have been arranged; rising along with applied voltage; the past lateral expansion of depleted region under the P district is until running into inboard guard ring; because the P district at guard ring and center all is heavy doping; electromotive force equates between them; depleted region just directly " jumpings " arrives the guard ring in the outside, thereby the depleted region that has enlarged has increased the electric field that the interval of P area edge equipotential line has reduced the P area edge.When voltage continued to raise, depleted region is the guard ring from inboard guard ring " jumping " to the outside again, further reduces the electric field at edge, punctures thereby effectively restrain the P area edge.Another technology is to utilize below P district the growth part charge sheet with the electric field in enhancing PN district, and the electric field that makes the PN district is greater than the ionization that bumps earlier of the electric field at edge.This technology is to utilize the method for metal organic chemical vapor deposition (MOCVD) or molecular beam epitaxy (MBE) grow on substrate absorbed layer and charge layer earlier, utilize reactive ion etching (RIE) under the P district, to etch a charge sheet then, continue to use the way growth dynode layer of MOCVD or MBE again.This technology relates to various technical processes, comprises diauxic growth, and reactive ion etching etc. realize more complicated.
The technology that tradition is restrained the puncture of APD device edge all needs to carry out complicated technical processs such as secondary diffusion, ion injection or diauxic growth; and these technical processs are for undersized chip; there is bigger difficulty in growth course, and particularly the guard ring technology has limited the size of chip size to a great extent.Can therefore, adopt a kind of technology technology simple and don't the limited chip size to restrain the puncture of APD device edge be an important research project.
Summary of the invention
The objective of the invention is to overcome the problem that the existing APD of supression device edge punctures technical existence, it is simple to have proposed a kind of method, not the method for the supression avalanche photodide edge breakdown of limited chip size.
To achieve these goals, the present invention adopts following technical scheme:
A kind of method of restraining the avalanche photodide edge breakdown, a kind of method of restraining the avalanche photodide edge breakdown, it is characterized in that comprising: (1) this diode comprises substrate, absorbed layer, dynode layer and intrinsic substrate layer from lower to upper successively, photoetching forms a window and by diffuseing to form P type heavily doped region on the intrinsic substrate layer, dynode layer in the avalanche photodiode structure selects to contain the material of high aluminium component, absorbed layer selects not contain or contain the material of low al composition, and the described material that contains high aluminium component is AlGaAs, AlAs, AlInAs or GaAlInAs; The described material that does not contain or contain low al composition is InGaAs, GaInNAs, GaInN, InGaAsP or InAlGaAs; (2) allow the material generation oxidation that contains high aluminium component of dynode layer lateral edge form alumina insulating layer earlier, make alumina insulating layer from lateral expansion around the dynode layer to the beneath marginal portion of P type heavily doped region.
In said method, the concrete steps of step (2) are: allow the side direction of dynode layer come out earlier, sample is placed in the oxidation furnace, give water flowing steam in the oxidation furnace, and the temperature and pressure of controlled oxidation stove, at high temperature the dynode layer side direction material that contains high aluminium component can generate the γ type aluminium oxide of insulation with water vapour generation oxidation reaction, the temperature of controlled oxidation and oxidization time, alumina insulating layer from lateral expansion around the dynode layer to the beneath marginal portion of P type heavily doped region.
Insulating material expands to the beneath marginal portion of P type heavily doped region, can effectively restrain the puncture of the too high generation of P district electric field.By controlled oxidation time and oxidizing temperature, length that can the controlled oxidation aluminum insulation layer makes oxidation length can expand to the edge in P district accurately, thereby effectively restrains the edge breakdown of APD device.
The method of supression avalanche photodide edge breakdown of the present invention is applicable to planarized structure or meas structure; Also be applicable to the APD of front light entrance structures thereof, back side light entrance structures thereof or side incident structure; Also be applicable to the APD that absorbs multiplication structure respectively or absorb the electric charge grading structure respectively.If increase the structure that incident light is absorbed in the APD structure, the waveguiding structure (WG-APD) as Bragg reflection (DBR) structure or limit coupling also is applicable to method of the present invention.
Compared with prior art, the present invention has following beneficial effect:
1. the method for supression APD edge breakdown of the present invention, the insulating barrier that has only utilized the dynode layer material generation selective oxidation reaction of oxygen carrier such as water vapour and high aluminium component to form is restrained edge breakdown, technology realize to go up simple more than traditional secondary diffusion, diauxic growth etc., and the formation that the length of oxidation can be controlled accurately with insulating layer material can more effectively prevent because the edge breakdown that the curvature effect of diffusion P district's formation causes.
2. the present invention need not make special structure (as guard ring) on chip, so size that can limited chip.
Description of drawings
Fig. 1 is the APD chip schematic diagram of typical plane SAM structure;
Fig. 2 is to be the plane APD chip structure schematic diagram of the front light inlet of substrate with GaAs;
Fig. 3 is to be the plane APD chip structure schematic diagram of the front light inlet of substrate with InP;
Fig. 4 is to be the plane APD chip structure schematic diagram of the back side light inlet of substrate with GaAs;
Fig. 5 is to be the APD chip structure schematic diagram with dbr structure of substrate with GaAs;
Fig. 6 is to be the mesa APD chip structure schematic diagram of the front light inlet of substrate with InP;
Fig. 7 is to be the mesa APD chip structure schematic diagram of the back side light inlet of substrate with InP.
Wherein:
1-N type electrode grounding end; 2-N type electrode; 3-substrate; 4-absorbed layer; 5-dynode layer; 6-intrinsic substrate layer; 7-SiNx protective layer; 8-P type electrode; 9-P type electrode; 10-P type heavily doped region; 11-alumina layer; 12-P type heavily doped layer; 13-N type GaAs/AlAs Bragg mirror (DBR) structure.
Embodiment
Utilize MOCVD (Metalorganic Chemical Vapor Deposition) or MBE (molecular beam epitaxial growth) on N type substrate successively the dynode layer of the absorbed layer that does not contain or contain low al composition of growth and substrate lattice coupling, high aluminium component and with the intrinsic substrate layer of the same material of substrate; Then under the protection of photoresist; utilize photoetching technique to form a window and technology formation P type heavily doped region by spreading; determine P district profile roughly by the window of photoetching formation and the condition of diffusion; the diaphragm of the material of the anti-oxidation of evaporation one deck on the intrinsic substrate layer again, so far the APD of simple SCAM structure completes.Form mesa structure by semiconductor lithography and etching technics by sample then, the side direction of dynode layer is come out, sample is placed in the oxidation furnace, give water flowing steam in the oxidation furnace, and the controlled oxidation stove is operated under the suitable temperature and pressure.At high temperature, the material that the dynode layer side direction contains high aluminium component can generate the γ type aluminium oxide that insulate with water vapour generation oxidation reaction, can come accurate controlled oxidation length by the temperature and the oxidization time of controlled oxidation.Information according to the P district profile that obtains previously, allow oxidation length by the side to sample center expansion and the part that makes the bending of P district on oxide layer, though the too high phenomenon of dynode layer fringe field that causes of curvature effect still exists like this, but puncture because the existence of γ type alumina insulating layer will suppress the dynode layer edge, thereby make the APD operate as normal.The last electrode of making the N type under N type substrate is drawn P type electrode on p type island region, the APD structure of restraining edge breakdown has so just completed.
For content of the present invention better is described, we describe the structure of restraining edge breakdown APD in conjunction with concrete illustration.Fig. 1 is the schematic diagram with APD chip structure of restraining edge breakdown, this structural representation be the APD chip of typical plane SAM structure.Its agent structure is made of the intrinsic substrate layer 6 of substrate 3, absorbed layer 4, dynode layer 5 and I type.The electrode 2 of mixing Au or Ge material formation ohmic contact that the N type is arranged below the substrate 3; have on the intrinsic substrate layer 6 of I type by the P type heavily doped region 10 that diffuses to form and go into window as a light beam; plated layer of sin X protective layer 7 on the intrinsic substrate layer 6 of I type; its purpose is to prevent that the surface is oxidized and reduce surface current, also has the P type electrode 9 that is extracted by P type heavily doped region 10 on SiNx protective layer 7.The part of core is to utilize the method for selective oxidation to have oxide layer 11 controllable oxidization length, insulation in the side direction formation of dynode layer 5 in this structure, under P type heavily doped region 10, and the part that makes 10 bendings of P type heavily doped region is on oxide layer 11 by lateral expansion for this oxide layer 11.
The APD structure of front light inlet as shown in Figure 2, substrate 3 are that GaAs material (GaAs), absorbed layer 4 are the GaAs material for GaInNAs material (gallium indium nitrogen arsenic), dynode layer 5 for AlGaAs material (aluminum gallium arsenide), intrinsic substrate layer 6.Absorbed layer 4 selects the width of the adjusting control band gap of the component that the GaInAs materials can be by In, N to make the optical wavelength of absorption drop on optical communicating waveband; Dynode layer 5 selects the AlGaAs material can effectively control multiplication noise.In the process that technology realizes, at first can utilize MOCVD on N type GaAs substrate 3, grow successively AlGaAs (x〉0.8) dynode layer 5 and the intrinsic substrate layer 6 of GaInNAs absorbed layer 4, high aluminium component, form a P type heavily doped region 10 on the intrinsic substrate layer 6 by being diffused in then; Sample is placed into oxidation in the oxidation furnace, make the AlGaAs oxidation in the dynode layer 5 generate the aluminium oxide 11 that insulate, and when the controlled oxidation chien shih oxidation length from lateral expansion near P type heavily doped region 10, because P type heavily doped region 10 sweeps are more than oxide layer, the high electric field of its formation is because the existence of insulating material can't make dynode layer 5 puncture, so this structure can effectively be restrained the punch-through effect at P type heavily doped region 10 edges.Make N type electrode 2 at substrate 3 at last, draw a part at P type heavily doped region 10 and make P type electrode 8 and P type electrode 9, and the antireflecting metal film of evaporation forms the window that receives incident light on P type heavily doped region 10.
Shown in Figure 3 is the APD structure of front light inlet, and substrate 3 is that InP material (indium phosphide), absorbed layer 4 are the InP material for GaInAs material, dynode layer 5 for GaAlInAs material, intrinsic substrate layer 6.Since with the wave-length coverage of the InGaAs absorbed of InP coupling at optical communicating waveband, and its SCAM structure has good bandwidth characteristic, therefore is widely used in the optical communication system.The process that technology realizes is identical with embodiment 1.
Shown in Figure 4 is the APD structure of back side light inlet, and substrate 3 is that GaAs material, absorbed layer 4 are the GaAs material for GaInNAs material, dynode layer 5 for AlGaAs material, intrinsic substrate layer 6.The making of agent structure is identical with embodiment 1 on the technology, on different places is that electrode is made.Directly on P type heavily doped region 10, make P type electrode 8 and P type electrode 9 in the present embodiment, when making N type electrode 2, by optical semiconductor lithography window that receives incident light of etching on substrate 3, and antireflecting metal film on the evaporation, N type electrode 2 made at last.
Embodiment 4
Shown in Figure 5 is the APD structure with dbr structure, and substrate 3 is that GaAs material, absorbed layer 4 are the GaAs material for GaInNAs material, dynode layer 5 for AlGaAs material, intrinsic substrate layer 6.Dbr structure can increase light absorbing efficient under the prerequisite of the thickness that does not increase absorbed layer 4, thereby improves responsiveness.The making of agent structure is similar to Example 1 on the technology, different places is at first to utilize the GaAs/AlAs Bragg reflection system with λ/4 optical thicknesses of MOCVD technology growth right quantity on substrate 3, make absorbed layer 4, dynode layer 5, intrinsic substrate layer 6 then, make P type electrode 8, P type electrode 9 and N type electrode.
Shown in Figure 6 is the APD structure of mesa front light inlet, and substrate 3 is that InP material, absorbed layer 4 are the InP material for InGaAs material, dynode layer 5 for GaAlInAs material, intrinsic substrate layer 6.The manufacture craft of mesa APD structure is simple, and concrete technology is real as follows: at first utilize MOCVD technology grow successively absorbed layer 4, dynode layer 5 and intrinsic substrate layer 6 on substrate 3, by the optical semiconductor lithography, etch meas structure then; Sample is placed into oxidation in the oxidation furnace, makes the GaAlInAs oxidation in the dynode layer 5 generate the aluminium oxide 11 that insulate.Because the position of mesa structure generation edge breakdown is near dynode layer 5 outermost places, so that the length of dynode layer 5 oxidations does not need is oversize, compare with the making of planarized structure, can save the time of making greatly; On substrate 3, make N type electrode 2 at last, on intrinsic substrate layer 6, make P type electrode 8 and P type electrode 9, and the antireflecting metal film of evaporation forms the window that receives incident light on intrinsic substrate layer 6 windows of P type.
Shown in Figure 7 is the APD structure of mesa back side light inlet, and substrate 3 is that InP material, absorbed layer 4 are the InP material for InGaAs material, dynode layer 5 for AlInAs material, intrinsic substrate layer 6.The making of agent structure is similar to Example 1 on the technology, on different places is that electrode is made.Present embodiment is directly made P type electrode 8 on intrinsic substrate layer 6, make N type electrode 2 on substrate 3.When making N type electrode 2, by optical semiconductor lithography window that receives incident light of etching on substrate 3, and antireflecting metal film on the evaporation, make N type electrode 2 at last again.
Claims (5)
1. method of restraining the avalanche photodide edge breakdown, it is characterized in that comprising: 1) this diode comprises substrate (3) from lower to upper successively, absorbed layer (4), dynode layer (5) reaches the intrinsic substrate layer (6) with the same material of substrate, at the last window of photoetching formation of intrinsic substrate layer (6) and by diffuseing to form P type heavily doped region (10), dynode layer in the avalanche photodiode structure (5) selects to contain the material of high aluminium component, absorbed layer (4) selects not contain or contain the material of low al composition, and the described material that contains high aluminium component is AlGaAs, AlAs, AlInAs or GaAlInAs; The described material that does not contain or contain low al composition is InGaAs, GaInNAs, GaInN, InGaAsP or InAlGaAs;
2) allow the material generation oxidation that contains high aluminium component of dynode layer (5) lateral edge form alumina insulating layer (11) earlier, make alumina insulating layer (11) around the dynode layer lateral expansion to the beneath marginal portion of P type heavily doped region (10), the beneath edge of described P type heavily doped region (10) has sweep, and the sweep of described P type heavily doped region (10) is on described alumina insulating layer (11).
2. the method for claim 1, it is characterized in that described step 2) be specially: allow dynode layer (5) side direction all around come out earlier, sample is placed in the oxidation furnace, give water flowing steam in the oxidation furnace, and the temperature and pressure of controlled oxidation stove, at high temperature dynode layer (5) the side direction material that contains high aluminium component can generate the γ type aluminium oxide of insulation with water vapour generation oxidation reaction, the temperature of controlled oxidation and oxidization time, alumina insulating layer (11) around the dynode layer lateral expansion to the beneath marginal portion of P type heavily doped region (10).
3. the method for claim 1 is characterized in that described avalanche photodide is planarized structure or meas structure.
4. the method for claim 1 is characterized in that described avalanche photodiode structure is front light entrance structures thereof, back side light entrance structures thereof or side incident structure.
5. the method for claim 1 is characterized in that described avalanche photodiode structure is for absorbing multiplication structure respectively or absorbing the electric charge grading structure respectively.
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| CN101814537B (en) * | 2009-02-19 | 2012-03-28 | 中国科学院半导体研究所 | Gallium nitride based avalanche detector and preparation method thereof |
| CN107170847A (en) * | 2017-05-16 | 2017-09-15 | 中国科学院半导体研究所 | Make avalanche photodide of multiplication region and preparation method thereof based on AlInAsSb body materials |
| WO2019053877A1 (en) * | 2017-09-15 | 2019-03-21 | 三菱電機株式会社 | Semiconductor light-receiving element and manufacturing method thereof |
| CN110544732B (en) * | 2019-08-29 | 2021-06-29 | 北京邮电大学 | Single-row carrier photodiode |
| CN111048595B (en) * | 2019-12-09 | 2022-07-29 | 中国电子科技集团公司第五十五研究所 | PIN diode deep platform forming method |
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| CN1885567A (en) * | 2006-07-11 | 2006-12-27 | 武汉电信器件有限公司 | Side lighting 10Gb/s APD tube core integrated with co-planar wave guide and its making process |
| CN1933187A (en) * | 2005-09-12 | 2007-03-21 | 三菱电机株式会社 | Avalanche photodiode |
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| CN1933187A (en) * | 2005-09-12 | 2007-03-21 | 三菱电机株式会社 | Avalanche photodiode |
| CN1885567A (en) * | 2006-07-11 | 2006-12-27 | 武汉电信器件有限公司 | Side lighting 10Gb/s APD tube core integrated with co-planar wave guide and its making process |
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