CN100483591C - Temperature switch - Google Patents
Temperature switch Download PDFInfo
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- CN100483591C CN100483591C CNB2006100901427A CN200610090142A CN100483591C CN 100483591 C CN100483591 C CN 100483591C CN B2006100901427 A CNB2006100901427 A CN B2006100901427A CN 200610090142 A CN200610090142 A CN 200610090142A CN 100483591 C CN100483591 C CN 100483591C
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Abstract
The invention discloses a temperature switch, comprising a threshold temperature setting module for output a digit signal to a basic temperature switch module, to adjust the effective width-length ration of a MOS tube in the temperature switch module for controlling the threshold temperature, to set the threshold temperature in the basic temperature switch module, an art error compensation module for providing an error compensation signal to the basic temperature switch module when the threshold temperature of the basic temperature switch module is deflected, to stabilize the threshold temperature in the basic temperature switch module, and a basic temperature switch module for changing the working state of circuit when the temperature reaches threshold temperature, to realize temperature switch function. The invention can realize the programmable control of switch temperature threshold value, thereby reducing the bias of temperature threshold value, and avoid the delay of temperature threshold value.
Description
Technical field
The present invention relates to be used for the temperature switch technical field of temperature detection and control, particularly a kind of Programmable Temperature switch with technology error compensation function.
Background technology
Temperature switch is widely used in technical fields such as modern household electrical equipment, motor, chip, carries out the control of temperature detection and temperature.The conventional temperature switch generally adopts temperature-sensitive material, and for example memorial alloy etc. is made.Along with the development of microelectric technique, the temperature switch that adopts integrated circuit technology to make has appearred, have little, the low cost and other advantages of volume.
The temperature switch of the integrated device of using is on principle at present, it all is the curtage that produces earlier be directly proportional with absolute temperature (PTAT), compare by comparison circuit and a reference voltage or electric current then, when temperature surpasses threshold value, comparator output signal overturns, and realizes the function of temperature switch.
Recently, Hokkaido, Japan university has proposed a kind of temperature switch of brand new, has only 7 metal-oxide-semiconductors, circuit working state flip-flop when reaching a certain threshold temperature, the function of realization temperature switch.The structure of this temperature switch is compared with the structure of original temperature switch, simplify greatly in the design, and power consumption is littler.
But this temperature switch has three significant disadvantages:
One, the switch temperature threshold value can't programming Control.
Two, the switch temperature threshold value is with device parameters V
TH0Almost be linear change, in normal device parameters excursion, temperature threshold may depart from tens degree.For example, according to our computer simulation, work as V to certain 0.35 μ mCMOS technology
TH0When changing 0.1V, the temperature threshold variation reaches 40 ℃.
Three, temperature threshold is sluggish excessive and non-adjustable.The sluggishness of temperature threshold is the poor of the threshold value of temperature when changing from low to high and from high to low.
Owing to there are above-mentioned three shortcomings, cause this temperature switch at present can't be practical.
Summary of the invention
(1) technical problem that will solve
At the deficiency that above-mentioned prior art exists, main purpose of the present invention is to provide a kind of Programmable Temperature switch with technology error compensation function, makes temperature switch be able to practicality.
(2) technical scheme
For achieving the above object, technical scheme of the present invention is achieved in that
A kind of temperature switch, this temperature switch comprises:
Threshold temperature is provided with module, is used for to cardinal temperature switch module output digital signal, and effective breadth length ratio of regulating the metal-oxide-semiconductor of control threshold temperature in the cardinal temperature switch module is provided with the threshold temperature in the cardinal temperature switch module;
The technology error compensation module is used for providing error compensating signal to the cardinal temperature switch module when the threshold temperature generation deviation of cardinal temperature switch module, stablizes the threshold temperature in the cardinal temperature switch module;
The cardinal temperature switch module is used for when temperature reaches threshold temperature changing the operating state of circuit, realizes the temperature switch function.
Described threshold temperature is provided with module and comprises: is used for the basic digital signal port of input and output digital signal and is used to store the digital signal of input, and to the memory circuitry of the stable output of cardinal temperature switch module digital signal.
Described basic digital signal port comprises: be used for the serial input terminal mouth of supplied with digital signal, be used to the clock signal of exporting the full parallel output terminal mouth of digital signal and being used for input and output are controlled.
Described threshold temperature is provided with module and further comprises: be used for the digital signal of input is deciphered, and the digital signal after will deciphering sends to the digital decoder of memory circuitry.
Described digital decoder adopts binary decoding mode or Gray's decoded mode that the digital signal of input is deciphered.
Described technology error compensation module comprises:
Biasing circuit is used for detecting the variation of cardinal temperature switch module threshold temperature, and when the threshold temperature generation deviation of cardinal temperature switch module, provides error compensating signal to floating boom neuron mos transistor circuit;
Floating boom neuron mos transistor circuit utilizes the error compensating signal that receives to regulate the cardinal temperature switch module, stablizes the threshold temperature in the cardinal temperature switch module.
Described biasing circuit comprises that two output voltages are the circuit of linear change and one with technological parameter and the very little subtraction circuit of temperature deviation with technological parameter and temperature, and the input of described subtraction circuit is connected with the output of above-mentioned two circuit.
Described floating boom neuron mos transistor circuit comprises electric capacity and MOS transistor of two parallel connections, and the grid of described MOS transistor links to each other with two electric capacity simultaneously.
Further comprise two MOS transistor as switch between described biasing circuit and the floating boom neuron mos transistor circuit, the on off state of periodically controlling two MOS transistor carries out initialization to floating boom neuron mos transistor circuit.
Described cardinal temperature switch module is the cardinal temperature sensitive circuit, comprise the paralleling MOS transistor that to select conducting, the described paralleling MOS transistor of selecting conducting, be used for being provided with effective breadth length ratio of the digital signal adjusting self of module input, realize setting threshold temperature according to threshold temperature.
(3) beneficial effect
From technique scheme as can be seen, the present invention has following beneficial effect:
1, utilizes the present invention, by adopting threshold temperature that module is set, can be to cardinal temperature switch module output digital signal, regulate effective breadth length ratio of control threshold temperature metal-oxide-semiconductor in the cardinal temperature switch module, under the prerequisite that does not improve the circuit complexity, can be provided with the threshold temperature in the cardinal temperature switch module easily, realize the control able to programme of switch temperature threshold value.
2, utilize the present invention, by adopting process error compensation module, when the threshold temperature of cardinal temperature switch module departs from, provide error compensating signal to the cardinal temperature switch module, stablize the threshold temperature in the cardinal temperature switch module, fine compensation the threshold temperature of temperature switch by the deviation that fabrication error causes, greatly reduce the deviation of temperature threshold, make threshold temperature basicly stable in a suitable fluctuation range.
3, utilize the present invention,, make temperature switch influenced by Current Temperatures, eliminated sluggishness, well solved the sluggish problem of temperature threshold by temperature switch circuit is carried out periodic initialization.
4, utilize the present invention, circuit power consumption is low, can further reach the purpose of energy savings, is very beneficial for promotion and application of the present invention.
Description of drawings
Fig. 1 is the structured flowchart with Programmable Temperature switch of technology error compensation function provided by the invention;
Fig. 2 is provided with the schematic diagram of module for threshold temperature provided by the invention;
Fig. 3 is provided with a simple circuit diagram of implementing of module for threshold temperature provided by the invention;
Fig. 4 is the enforcement circuit diagram of technology error compensation module provided by the invention;
Fig. 5 is the enforcement circuit diagram of biasing circuit provided by the invention;
Fig. 6 is the enforcement circuit diagram of cardinal temperature switch module provided by the invention.
Embodiment
For making the purpose, technical solutions and advantages of the present invention clearer, below in conjunction with specific embodiment, and with reference to accompanying drawing, the present invention is described in more detail.
As shown in Figure 1, Fig. 1 is the structured flowchart with Programmable Temperature switch of technology error compensation function provided by the invention, and this temperature switch comprises that threshold temperature is provided with module 101, technology error compensation module 102 and cardinal temperature switch module 103.
Wherein, threshold temperature is provided with module 101, be used for to cardinal temperature switch module 103 output digital signals, effective breadth length ratio of regulating the metal-oxide-semiconductor of control threshold temperature in the cardinal temperature switch module 103 is provided with the threshold temperature in the cardinal temperature switch module 103.
Described threshold temperature is provided with module 101 and comprises basic digital signal port that is used for the input and output digital signal and the digital signal that is used to store input, and to the stable memory circuitry of exporting digital signal of cardinal temperature switch module.
Described basic digital signal port comprises the serial input terminal mouth that is used for supplied with digital signal, is used to the clock signal of exporting the full parallel output terminal mouth of digital signal and being used for input and output are controlled.
Described threshold temperature is provided with module 101 and comprises that further the digital signal that is used for input deciphers, and the digital signal after will deciphering sends to the digital decoder of memory circuitry.
Described digital decoder can adopt binary decoding mode, Gray's decoded mode or other decoded modes that the digital signal of input is deciphered.
Technology error compensation module 102 is used for providing error compensating signal to cardinal temperature switch module 103 when the threshold temperature generation deviation of cardinal temperature switch module 103, stablizes the threshold temperature in the cardinal temperature switch module 103;
Described technology error compensation module 102 comprises biasing circuit, be used for detecting the variation of cardinal temperature switch module 101 threshold temperatures, and when the threshold temperature generation deviation of cardinal temperature switch module 101, provide error compensating signal to floating boom neuron mos transistor circuit; Floating boom neuron mos transistor circuit, the error compensating signal that is used for receiving sends to cardinal temperature switch module 101, stablizes the threshold temperature in the cardinal temperature switch module 101.
Described biasing circuit comprises that two output voltages are the circuit of linear change and one with technological parameter and the very little subtraction circuit of temperature deviation with technological parameter and temperature, and the input of described subtraction circuit is connected with the output of above-mentioned two circuit.
Described floating boom neuron mos transistor circuit comprises electric capacity and MOS transistor of two parallel connections, and the grid of described MOS transistor links to each other with two electric capacity simultaneously.
Further comprise two MOS transistor as switch between described biasing circuit and the floating boom neuron mos transistor circuit, the on off state of periodically controlling two MOS transistor carries out initialization to floating boom neuron mos transistor circuit.
Cardinal temperature switch module 103 is used for when temperature reaches threshold temperature changing the operating state of circuit, realizes the temperature switch function.
Described cardinal temperature switch module is the cardinal temperature sensitive circuit, comprise the paralleling MOS transistor that to select conducting, the described paralleling MOS transistor of selecting conducting, be used for being provided with effective breadth length ratio of the digital signal adjusting self of module input, realize setting threshold temperature according to threshold temperature.
Based on the described structured flowchart with Programmable Temperature switch of technology error compensation function provided by the invention of Fig. 1, the Programmable Temperature switch with technology error compensation function provided by the invention is further described below in conjunction with concrete schematic diagram and enforcement circuit diagram.
As shown in Figure 2, Fig. 2 is provided with the schematic diagram of module for threshold temperature provided by the invention.It is the serial input terminal mouth of N position, the full parallel output terminal mouth and the clock signal port of M position that basic digital signal port has width.During work, at first under the control of clock signal port clock, length is that the digital signal of n position is that the serial input terminal mouth of N position is input to threshold temperature and is provided with in the module by width, by decoding circuit it is deciphered then.Decoded mode is decided according to need, can be binary decoding, Gray's decoding etc.The M position digital signal that to translate of decoding circuit stores in the register circuit then, register circuit is stablized the output digital signal by the full parallel output terminal mouth of M position to the cardinal temperature switch module, realizes the threshold temperature in the cardinal temperature switch module is provided with.Here the value of n, N and M is decided according to different needs.
In addition, being provided with at threshold temperature to increase (reset) port that resets in the module, adds function of initializing etc.
As shown in Figure 3, Fig. 3 is provided with a simple circuit diagram of implementing of module for threshold temperature provided by the invention.Should simply implement circuit diagram and not comprise decoding circuit, the digital signal of input is not deciphered, whole module only is made of 12 simple cascades of register.Utilize the digital signal of 12 of 1 Bits Serial input serial inputs, 12 position digital signals and line output when input was finished.Wherein, RST is the initialization control end, and trailing edge is effective.
As shown in Figure 4, Fig. 4 is the enforcement circuit diagram of technology error compensation module provided by the invention.Two electric capacity of C1, C2 and MOS transistor MN5 constitute the floating boom neuron circuit, and its node potential initialization is controlled by biasing circuit.The a node meets bias voltage VB1 by MN6, and VB1 does not change with temperature and fabrication error; The b node meets bias voltage VB2 by MN7, and VB2 is with the fabrication error linear change; Another utmost point ground connection of C2.When a and the initialization of b node potential, reset is a high level, MN6 and MN7 conducting, and Va and Vb are charged to VB1 and VB2 respectively, and stable back reset becomes low level, and switching tube turn-offs, and circuit is to the stable state transition.According to the capacitance partial pressure principle, the variation of a node voltage also changes the b node voltage, and the ratio of the amplitude that both change is relevant with the ratio of C1, C2.Simultaneously, the voltage of b node can influence the voltage of a node again by temperature switch circuit, finally reaches stable state.
As technological parameter V
TH0During variation, need the magnitude of voltage V of b node initializing
B2With V
TH0Linear change just can make temperature threshold remain unchanged, thereby plays the effect of compensation.Such as, in typical case, the technological parameter V of NMOS pipe
THONBe 0.5V, at this moment V
B1Be 1.1V, the output voltage V B2 of biasing circuit is 850mV, and threshold temperature is 60 ℃; Suppose that deviation appears in parameter, V
THONBecome 0.4, V
B1Not being subjected to effects of process parameters, still is 1.1V.At this moment, if require temperature threshold constant, the negative pole preset voltage of C1 need raise about 50mV.At this moment, the output voltage V of biasing circuit
B2Just in time become 900mV, reached the effect of compensation from representative value 850mV; Otherwise, V
THONBecome big, the negative pole preset voltage of C1 need reduce and guarantees that temperature threshold is constant, and this moment V
B2Magnitude of voltage just in time reduced certain amplitude, also satisfied requirement.And, by the periodic turn-on and turn-off of switching tube MN6, MN7 circuit being carried out initialization, circuit only is subjected to the influence of Current Temperatures, has eliminated the problem of temperature hysteresis.
As shown in Figure 5, Fig. 5 is the enforcement circuit diagram of biasing circuit provided by the invention.Leftmost part MP22 to MP29 is used to provide two stable bias voltage V
BHAnd V
BL, V
BHAnd V
BLNot with fabrication error and variations in temperature.
V
B1Require not change with flow-route and temperature as far as possible, can by several measure-alike, operating state is identical and next-door neighbour's PMOS pipe dividing potential drop obtains, for example realize with MP19, MP20, MP21 series connection dividing potential drop among the figure, three pipes all work in the saturation region, and owing in domain, be close to, have identical technological parameter and temperature, so that output voltage is influenced by flow-route and temperature is very little.Produce V
B2Circuit mainly comprise three parts, bias-voltage generating circuit BIAS1, BIAS2 and subtraction circuit.MN10, MN11 and load pipe MP10, MP11, voltage input end V
BHWith voltage output end V
HForm the BIAS1 module; MP12, MN12 and load pipe MP13, MP14, voltage input end V
BLWith voltage output end V
LForm the BIAS2 module.Output voltage V 7, the V6 of MP12, MP13 and MP10, MN10 two branch roads change with fabrication error.MP14, MN12 and MP11, MN11 two branch roads can be regarded two one-stage amplifiers as, have amplified V6, the V7 variation with fabrication error.The size of each pipe of appropriate design can make their output voltage V
HAnd V
LWith technological parameter V
TH0Linear change, but size, amplitude is different, has temperature much at one to float coefficient.
Four measure-alike PMOS pipe MP15 to MP18 form subtraction circuit, do not change with technology and variation of temperature.Four PMOS pipe MP15 to MP18 are in the saturation region when work, equate owing to flow through the electric current of MP15, MP17, can release according to the saturation region current formula: V
Dd-V1=V
H-V
LIn like manner, equate and to release by the electric current that flows through MP16, MP18: V
Dd-V
B2=V1 just has two formula simultaneous: V
B2=V
H-V
LBecause size and the condition of work of MP15 to MP18 are identical, the position is contiguous in domain, so technological parameter and temperature are much at one, operating state does not just change the V that obtains so thereupon yet
B2With technological parameter V
TH0It is very little that linear change and temperature are floated coefficient.
V
BH, V
BLRequire not change with flow-route and temperature as far as possible, can by several measure-alike, operating state is identical and next-door neighbour's PMOS pipe dividing potential drop obtains.Provided example a: V among the figure
BHAnd V
H1Manage MP22, MP23 and MP24 and MP25 polyphone dividing potential drop by two measure-alike PMOS respectively V is provided
BLBy V
BHAnd V
H1Subtract each other by a subtraction circuit (constituting) and to obtain by MP26 to MP29.
As shown in Figure 6, Fig. 6 is the enforcement circuit diagram of cardinal temperature switch module provided by the invention.Its cardinal temperature switch sections is made up of two PMOS pipe MP1, MP2 and five NMOS pipe MN1 to MN5.Concrete operation principle is as follows: when temperature was low, MP1 and MP2 were in the saturation region, and MN1 to MN4 is positioned at sub-threshold region, and MN5 is operated in linear zone, the voltage V of b node
bThan higher.With the rising of temperature, by the control of technology error compensation module, V
bWill be with the voltage V of a node
aReduce V during to a certain temperature gradually
bDrop to below the threshold voltage of MN5, the operating state of circuit is undergone mutation, and all pipes all are in cut-off state, V
bOccur falling suddenly.The temperature of this moment is threshold temperature.The threshold temperature of this temperature switch circuit increases and non-linear rising with the ratio K M (KM=(W/L) 4/ (W/L) 3) of the breadth length ratio of MN3, MN4 pipe, so conducting that can be by controlling a series of parallel branches and end to come temperature threshold is provided with.
Just can reach target though only change the equivalent width of MN4,, only increase the equivalent width W of MN4 because threshold temperature has non-linear (slope diminishes gradually) with the variation of KM
4Regulate and at this moment to reduce the equivalent width W of MN3 along with the rising of temperature threshold is more and more difficult
3Easier change KM, equivalent width adjustment module that can also more efficient use MN4 is so we have adopted the mode that the equivalent width of MN3, MN4 is regulated simultaneously to finish setting to threshold temperature.
In Fig. 6 left-hand broken line is MN3 equivalent width adjustment module, MN11
3And MN12
3Be parallel transistor, length is identical with MN3, and width is different, S1
3And S2
3Be switch, be subjected to threshold temperature that the output signal A[2:1 of module is set] control.Switch can be realized with structures such as single metal-oxide-semiconductor or transmission gates.As a certain switch S n
3When closed, this branch road conducting, the equivalent width of MN3 has increased Wn, and (Wn is MN1n
3Width).In the dotted line of right side is MN4 equivalent width adjustment module, MN11
4To MN16
4Be parallel transistor, S1
4To S6
4Be switch, be subjected to B[6:1] control, principle is identical with the left side module.Because threshold temperature is with the non-linear rising of the increase of KM, can bring very big deviation so only carry out 16 grades adjusting with 4 position digital signals, need to add extra compensation branch road, the right side 4 tunnel in the MN4 equivalent width adjustment module is compensation and controls branch road here.Fig. 6 just is adjusted to example with 16 grades and describes, and the progression of regulating if desired when practical application changes, and the number of parallel branch also can respective change.
Threshold temperature is provided with 0,1 signal (concrete decoded mode depends on the needs) of module output digit, the conducting of parallel branch and ending in the control width adjusting module.
Above-described schematic diagram and enforcement circuit diagram; purpose of the present invention, technical scheme and beneficial effect are further described; institute is understood that; the above only is specific embodiments of the invention; be not limited to the present invention; within the spirit and principles in the present invention all, any modification of being made, be equal to replacement, improvement etc., all should be included within protection scope of the present invention.
Claims (10)
1, a kind of temperature switch is characterized in that, this temperature switch comprises:
Threshold temperature is provided with module, is used for to cardinal temperature switch module output digital signal, and effective breadth length ratio of regulating the metal-oxide-semiconductor of control threshold temperature in the cardinal temperature switch module is provided with the threshold temperature in the cardinal temperature switch module;
The technology error compensation module is used for providing error compensating signal to the cardinal temperature switch module when the threshold temperature generation deviation of cardinal temperature switch module, stablizes the threshold temperature in the cardinal temperature switch module;
The cardinal temperature switch module is used for when temperature reaches threshold temperature changing the operating state of circuit, realizes the temperature switch function.
2, temperature switch according to claim 1, it is characterized in that, described threshold temperature is provided with module and comprises: the basic digital signal port that is used for the input and output digital signal, with the digital signal that is used to store input, and to the stable memory circuitry of exporting digital signal of cardinal temperature switch module.
3, temperature switch according to claim 2 is characterized in that, described basic digital signal port comprises:
The serial input terminal mouth that is used for supplied with digital signal is used to the clock signal of exporting the full parallel output terminal mouth of digital signal and being used for input and output are controlled.
4, temperature switch according to claim 2 is characterized in that, described threshold temperature is provided with module and further comprises: be used for the digital signal of input is deciphered, and the digital signal after will deciphering sends to the digital decoder of memory circuitry.
5, temperature switch according to claim 4 is characterized in that, described digital decoder adopts binary decoding mode or Gray's decoded mode that the digital signal of input is deciphered.
6, temperature switch according to claim 1 is characterized in that, described technology error compensation module comprises:
Biasing circuit is used for detecting the variation of cardinal temperature switch module threshold temperature, and when the threshold temperature generation deviation of cardinal temperature switch module, provides error compensating signal to floating boom neuron mos transistor circuit;
Floating boom neuron mos transistor circuit utilizes the error compensating signal that receives to regulate the cardinal temperature switch module, stablizes the threshold temperature in the cardinal temperature switch module.
7, temperature switch according to claim 6, it is characterized in that, described biasing circuit comprises that two output voltages are the circuit of linear change with technological parameter and temperature, with one with technological parameter and the very little subtraction circuit of temperature deviation, the input of described subtraction circuit is connected with the output of above-mentioned two circuit.
8, temperature switch according to claim 6 is characterized in that, described floating boom neuron mos transistor circuit comprises electric capacity and MOS transistor of two parallel connections, and the grid of described MOS transistor links to each other with two electric capacity simultaneously.
9, temperature switch according to claim 6, it is characterized in that, further comprise two MOS transistor as switch between described biasing circuit and the floating boom neuron mos transistor circuit, the on off state of periodically controlling two MOS transistor carries out initialization to floating boom neuron mos transistor circuit.
10, temperature switch according to claim 1, it is characterized in that, described cardinal temperature switch module is the cardinal temperature sensitive circuit, comprise the paralleling MOS transistor that to select conducting, the described paralleling MOS transistor of selecting conducting, be used for being provided with effective breadth length ratio of the digital signal adjusting self of module input, realize setting threshold temperature according to threshold temperature.
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| CNB2006100901427A CN100483591C (en) | 2006-06-29 | 2006-06-29 | Temperature switch |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2006100901427A CN100483591C (en) | 2006-06-29 | 2006-06-29 | Temperature switch |
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|---|---|
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| CN100483591C true CN100483591C (en) | 2009-04-29 |
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| CN109120262B (en) * | 2018-07-27 | 2022-04-29 | 河北工程大学 | Comprehensive device for rapidly locking phase-locked loop frequency |
| CN110794909B (en) * | 2019-11-05 | 2021-06-04 | 安徽大学 | Ultra-low power consumption voltage reference source circuit with adjustable output voltage |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1998038557A1 (en) * | 1997-02-27 | 1998-09-03 | Aktiebolaget Electrolux | A temperature control circuit |
| US20050041353A1 (en) * | 2003-07-31 | 2005-02-24 | Adrian Finney | Temperature dependent switching circuit |
-
2006
- 2006-06-29 CN CNB2006100901427A patent/CN100483591C/en active Active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1998038557A1 (en) * | 1997-02-27 | 1998-09-03 | Aktiebolaget Electrolux | A temperature control circuit |
| US20050041353A1 (en) * | 2003-07-31 | 2005-02-24 | Adrian Finney | Temperature dependent switching circuit |
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