CN100483236C - Pixel structure capable of avoiding black-white point flickering after laser repairing - Google Patents
Pixel structure capable of avoiding black-white point flickering after laser repairing Download PDFInfo
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- CN100483236C CN100483236C CNB2006101373989A CN200610137398A CN100483236C CN 100483236 C CN100483236 C CN 100483236C CN B2006101373989 A CNB2006101373989 A CN B2006101373989A CN 200610137398 A CN200610137398 A CN 200610137398A CN 100483236 C CN100483236 C CN 100483236C
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Abstract
Each pixel has a semi conductor electrode partially overlapped with a suspended-joint metal located at the grid electrode layer; both source electrode line and the drain electrode have a bulge overlapped with the semiconductor and the suspended-joint metal; once the pixel is lighted, the a laser beam is used to irradiate the bulge of the source electrode line from the lower surface of the baseboard in order to connect the source electrode line to the suspended-joint metal so as to form a diode structure with filter function; after preparation, the bright spot will not appear at white and black check.
Description
Technical field
The present invention relevant a kind of dot structure, the particularly dot structure of relevant a kind of thin-film transistor array base-plate.
Background technology
(Thin Film Transistor-Liquid Crystal Display is a kind of flat-panel screens that is widely used most at present TFT-LCD) to Thin Film Transistor-LCD, and it has advantages such as low consumpting power, thin type light weight and low voltage drive.
The current thin film transistor liquid crystal display (TFT-LCD) develops towards the application of TV, panel also strides forward towards the large scale design gradually, so the complexity of manufacture craft and difficulty also raise day by day along with the continuous increase of size, therefore, the influence that is difficult to take into account the restrictive condition of manufacture craft in design and suppresses manufacture craft error counter plate display quality, and they are the important keys that influence production capacity and yield.
The image viewing area of LCD comprises many pixels of arranging with the matrix pattern, a pixel (pixel) zone is defined by two gate lines (gate line) and the rectangular area that two source electrode lines (source line) surround, except pixel electrode, a thin-film transistor element and a capacitor storage beam (storage capacitance line) have also been comprised, thin film transistor (TFT) is an on-off element, its on off state be by from the signal of gate line with control from the source signal of source electrode line, capacitor storage beam is by each pixel, and its function is to keep the arrival of the existing signal of pixel electrode up to next signal.
In the production run of LCD, often be vulnerable to that production process pollutes or electrostatic breakdown, make short circuit that thin film transistor (TFT) is unusual or open circuit, thereby cause the point defect (pixeldefect) of pixel.Point defect can be divided into bright spot (white defect), dim spot (dark defect) etc., display quality in order to ensure panel, usually (Color Filter CF) can carry out the point defect that panel is found in black full picture inspection and complete white picture inspection behind the production process of substrate finishing thin-film transistor array base-plate and colored filter.Because human eye is very responsive and be easy to identification to bright spot, and bright spot is bright when complete black picture is checked, therefore can adopt laser preparing traditionally when only having the minority bright spot to take place.
Figure 1A looks synoptic diagram on the dot structure part of existing laser preparing, source electrode line 114 transmits source signal to source electrode 100, signal transmits via the gate line 104 that is positioned at the grid electrode layer above the substrate, capacitor storage beam 110 in the pixel is positioned at grid electrode layer, provide energising altogether and press Vcom, semi-conducting electrode 102 is covered by the drain electrode 106 of the source electrode 100 of part with part respectively, and contact hole 108 is in order to electrically connect pixel electrode 112 and drain electrode 106.
When complete black picture inspection finds that this pixel has bright spot, laser beam can be used to shine the overlapping region 118 of drain electrode 106 and gate line 104 to electrically connect drain electrode 106 and gate line 104, because pixel electrode 112 is electric connection with drain electrode 106, equate with grid voltage so the voltage of the pixel electrode 112 after repairing is permanent.
Because of grid voltage replaces between its high-level voltage Vgh, low level voltage Vgl, and the voltage difference absolute value between Vgh, Vgl and the Vcom all can be greater than Vcom, and therefore patched pixel perseverance presents dim spot.
Illustrate with Figure 1B, suppose that Vgh equals 24V, Vgl equals-6V, Vcom equals 4V, and the voltage difference absolute value between Vgh, Vgl and the Vcom is respectively Vd1 and Vd2, and Vd1 equals 20V, Vd2 equals 10V, so Vd1 and Vd2 are all greater than Vcom, therefore patched pixel perseverance presents dim spot, reaches the purpose of repairing bright spot.
Yet though the repairing method that this kind converts bright spot to dim spot has been exempted the shortcoming that pixel all presents bright spot forever, it can present tangible dim spot when complete white picture, thereby has reduced the image display quality of Thin Film Transistor-LCD.
Fig. 2 A looks synoptic diagram on the dot structure part of another kind of existing laser preparing, source electrode line 214 transmits source signal to source electrode 200, signal transmits via the gate line 204 that is positioned at the grid electrode layer above the substrate, capacitor storage beam 210 in the pixel is positioned at grid electrode layer, provide energising altogether and press Vcom, semi-conducting electrode 202 is covered by the drain electrode 206 of the source electrode 200 of part with part respectively, contact hole 208 is in order to electrically connect pixel electrode 212 and drain electrode 206, the one suspension joint metal 216 that is positioned at grid electrode layer is to prepare the usefulness of making laser preparing when needed, and this suspension joint metal 216 partially overlaps first overlapping region 218 and second overlapping region 220 with source electrode line 214 and drain electrode 206 respectively.
In case when complete black picture is checked, find that this pixel is a bright spot, laser beam can shine first overlapping region 218 and second overlapping region 220 from the lower surface of transparent glass substrate respectively, electrically connect source electrode line 214 and suspension joint metal 216 and drain electrode 206 and suspension joint metal 216, source electrode line 214 electrically connects via suspension joint metal 216 with drain electrode 206, and then make source signal directly be sent to pixel electrode 212 through contact hole 208, and then bright spot converted to little bright spot, reach the purpose of repairing bright spot.
Yet, no matter be black full picture inspection or complete white picture inspection, little bright spot all can alternately produce the phenomenon of flicker because of positive-negative polarity, illustrate with Fig. 2 B and Fig. 2 C, Fig. 2 B is that the positive-negative polarity of little bright spot when complete black picture is checked replaces synoptic diagram, source signal replaces between its high and low accurate voltage Vsh, Vsl, Vsh equals 8V, Vsl equals 0V, Vcom equals 4V, and the voltage difference of Vsh, Vsl and Vcom is respectively Vd3, Vd4, and Vd3 equals 4V, Vd4 equals-4V, so little bright spot can alternately glimmer because of positive-negative polarity.Fig. 2 C is that the positive-negative polarity of little bright spot when complete white picture is checked replaces synoptic diagram, source signal replaces between its high and low accurate voltage Vsh, Vsl, Vsh equals 5V, Vsl equals 3V, Vcom equals 4V, and the voltage difference of Vsh, Vsl and Vcom is respectively Vd5, Vd6, and Vd5 equals 1V, Vd6 equals-1V, so little bright spot can alternately glimmer because of positive-negative polarity.
Therefore, though repairing method that this kind converts bright spot to little bright spot has been exempted the shortcoming that pixel all presents bright spot or dim spot forever, but it has the phenomenon of flicker when the source signal positive-negative polarity replaces, thereby has reduced the image display quality of Thin Film Transistor-LCD.
Summary of the invention
Bright point repairing is become the shortcoming that presents obvious stain behind the dim spot in complete white picture inspection in order to solve prior art, the purpose of this invention is to provide a kind of dot structure, make bright spot after laser radiation is repaired, present the white point and the stain that can not glimmer in complete white picture inspection and complete black picture inspection respectively.
In order to reach above-mentioned and other purpose, the invention provides a kind of dot structure of avoiding black-white point flickering after laser repairing, pixel have one be positioned at the partly overlapping semi-conducting electrode of a suspension joint metal of grid electrode layer, and source electrode line and drain electrode all have semi-conducting electrode and the partly overlapping protuberance of suspension joint metal therewith, in case when finding that this pixel is bright spot, form a diode structure with filter effect with a laser beam to electrically connect source electrode line and suspension joint metal from the protuberance of the lower surface irradiation source polar curve of substrate, therefore, bright spot presents the white point and the stain that can not glimmer in complete white picture inspection and complete black picture inspection respectively after repairing.
Therefore, dot structure of the present invention and its method for repairing and mending can effectively improve repairing quality and efficient.
Description of drawings
Figure 1A looks synoptic diagram on the dot structure part of existing laser preparing of the present invention.
Figure 1B is the pixel voltage synoptic diagram of prior art of the present invention.
Fig. 2 A looks synoptic diagram on the dot structure part of the existing laser preparing of another kind of the present invention.
Fig. 2 B is that the positive-negative polarity of little bright spot when complete black picture is checked of another kind of prior art of the present invention replaces synoptic diagram.
Fig. 2 C is that the positive-negative polarity of little bright spot when complete white picture is checked of another kind of prior art of the present invention replaces synoptic diagram.
Fig. 3 A looks synoptic diagram on the partial pixel structure of laser preparing of first embodiment of the invention.
Fig. 3 B is the diagrammatic cross-section along the A-A ' line segment of Fig. 3 A.
Fig. 3 C is the diagrammatic cross-section along the B-B ' line segment of Fig. 3 A.
Fig. 3 D is the diagrammatic cross-section along the C-C ' line segment of Fig. 3 A.
Fig. 3 E is that first embodiment of the invention is through the equivalent circuit diagram behind the laser preparing.
Fig. 3 F is that first embodiment of the invention is through the discharge and recharge waveform of pixel electrode voltage behind the laser preparing in complete black picture inspection.
Fig. 3 G is that first embodiment of the invention is through the discharge and recharge waveform of pixel electrode voltage behind the laser preparing in complete white picture inspection.
Fig. 4 A looks synoptic diagram on the partial pixel structure of laser preparing of second embodiment of the invention.
Fig. 4 B is the diagrammatic cross-section along the D-D ' line segment of Fig. 4 A.
Fig. 4 C is that second embodiment of the invention is through the equivalent circuit diagram behind the laser preparing.
Embodiment
Fig. 3 A looks synoptic diagram on the dot structure part of laser preparing of first embodiment of the invention, this thin-film transistor array base-plate pixel is a sandwich construction, two metal levels with grid electrode layer and source/drain electrode layer, grid electrode layer comprises a gate line 304, one capacitor storage beam 310 and one first suspension joint metal 316, gate line 304 is the direction settings along row, capacitor storage beam 310 transmits energising altogether and presses Vcom, source/drain electrode layer comprises one source pole line 314, an one source pole electrode 300 and a drain electrode 306, source electrode line 314 transmits source signal to source electrode 300, source electrode 300 is overlapped with one first semi-conducting electrode 302 respectively with drain electrode 306, gate line 304 has a gate electrode (not shown) that is positioned at first semi-conducting electrode, 302 belows, and signal is sent to gate electrode via gate line 304.One contact hole 308 is the pixel electrodes 312 and drain electrode 306 in order to electrically connect this pixel; One second semi-conducting electrode 318 is to overlap with the first suspension joint metal 316, source electrode line 314 has and second semi-conducting electrode 318 and the first suspension joint metal, the 316 partly overlapping first source electrode line protuberances 320, and drain electrode 306 has and second semi-conducting electrode 318 and the first suspension joint metal, the 316 partly overlapping first drain electrode protuberances 322.
In a preferred embodiment, the material of grid electrode layer and source/drain electrode layer comprises aluminium, copper, gold, chromium, tantalum, titanium, manganese, nickel, molybdenum, niobium, neodymium, silver or its combination, and the pixel electrode 312 of conduction is indium tin oxide (Indium Tin 0xide, IT0) or indium-zinc oxide (Indium ZincOxide, IZO).
Fig. 3 B is the diagrammatic cross-section along the A-A ' line segment of Fig. 3 A, and a gate electrode 326 is between a substrate 324 and a gate insulator 328.In a preferred embodiment; the material of substrate 324 is a clear glass; first semi-conducting electrode 302 is positioned on the gate insulator 328; drain electrode 306 is separated by with a protection insulation course 330 with source electrode 300 and is electrically insulated; in a preferred embodiment, gate insulator 328 comprises monox (Silicon oxide) or silicon nitride (Siliconnitride) with protection insulation course 330.
Fig. 3 C is the diagrammatic cross-section along the B-B ' line segment of Fig. 3 A, and a contact hole 308 is in order to electrically connect pixel electrode 312 and drain electrode 306.
In case when complete black picture inspection finds that this pixel is bright spot; the first source electrode line protuberance 320 with laser beam irradiation Fig. 3 A carries out the pixel repairing; Fig. 3 D is the diagrammatic cross-section along the C-C ' line segment of Fig. 3 A; in order to illustrate the first source electrode line protuberance 320 by the cross-section structure after the laser radiation; laser beam is injected from the lower surface of substrate 324; the first source electrode line protuberance 320 and the first drain electrode protuberance 322 are positioned on second semi-conducting electrode 318 and are separated by and are electrically insulated with a protection insulation course 330, and the first source electrode line protuberance 320 and the first suspension joint metal 316 electrically connect by motlten metal 332.
Therefore, through behind the laser preparing, the first suspension joint metal 316, second semi-conducting electrode 318 form a diode structure that electrically connects with source electrode line 314 with drain electrode 306, Fig. 3 E is the equivalent circuit diagram behind the laser preparing, and SL represents source electrode line 314, and GE1 represents the first suspension joint metal 316, SE2 represents second semi-conducting electrode 318, DE represents drain electrode 306, PE represent pixel electrode 312, and this diode structure has the function of filtering.
Illustrate behind the laser preparing pixel electrode voltage Vp at the waveform that discharges and recharges of complete black picture inspection with Fig. 3 F, source signal replaces between its high and low accurate voltage Vsh, Vsl, Vp is charging during the Vsh and is discharging during Vsl, and Vp is all the time greater than common electric voltage Vcom, in a preferred embodiment, Vsh equals 8V, and Vsl equals 0V, and common electric voltage Vcom equals 4V.
Illustrate behind the laser preparing pixel electrode voltage Vp at the waveform that discharges and recharges of complete white picture inspection with Fig. 3 G, source signal replaces between its high and low accurate voltage Vsh, Vsl, Vp is charging during the Vsh and is discharging during Vsl, and Vp is all the time greater than common electric voltage Vcom, in a preferred embodiment, Vsh equals 5V, and Vsl equals 3V, and common electric voltage Vcom equals 4V.
Therefore, diode structure has produced the effect of filtering, the voltage Vp of pixel electrode is all the time greater than common electric voltage Vcom, so therefore this pixel bright spot also can not produce the problem of the flicker of little bright spot can equally with other normal pixel presenting stain and white point respectively when complete black picture inspection is checked with complete white picture behind the laser preparing.
In the diode structure of first embodiment, pixel electrode voltage Vp is by the reverse leakage current discharge during Vsl, in order to make discharge procedures easier, the second embodiment of the present invention more than first embodiment more and is provided with a diode structure, a Vp is provided the discharge path during Vsl, look synoptic diagram on Fig. 4 A second embodiment, one the 3rd semi-conducting electrode 418 is to overlap with one second suspension joint metal 416, source electrode line 314 has and the 3rd semi-conducting electrode 418 and the second suspension joint metal, the 416 partly overlapping second source electrode line protuberances 420, and drain electrode 306 has and the 3rd semi-conducting electrode 418 and the second suspension joint metal, the 416 partly overlapping second drain electrode protuberances 422.
In case when complete black picture inspection found that this pixel is bright spot, laser beam also will shine the second drain electrode protuberance 422 and carry out the pixel repairing except will shining the first source electrode line protuberance 320.
Fig. 4 B is the diagrammatic cross-section along the D-D ' line segment of Fig. 4 A; in order to illustrate the second drain electrode protuberance 422 by the cross-section structure after the laser radiation; laser beam is injected from the lower surface of substrate 324; the second source electrode line protuberance 420 and the second drain electrode protuberance 422 are positioned on the 3rd semi-conducting electrode 418 and are separated by and are electrically insulated with a protection insulation course 330, and the second drain electrode protuberance 422 and the second suspension joint metal 416 electrically connect by motlten metal 432.
Therefore, through behind the laser preparing, the second suspension joint metal 416, the 3rd semi-conducting electrode 418 form a diode structure that electrically connects with pixel electrode 312 with source electrode line 314, Fig. 4 C is the equivalent circuit diagram behind the laser preparing, GE2 represents the second suspension joint metal 416, and SE3 represents the 3rd semi-conducting electrode 418, therefore, GE1-SE2-DE forms one first diode, and GE2-SE3-SL forms one second diode; Refer again to Fig. 3 F and Fig. 3 G, pixel electrode voltage Vp can during the Vsh via first diode charging and during Vsl via second diode discharge, that is to say that second embodiment Duoed a discharge path than first embodiment, so the discharge procedures ratio is easier to.
Certainly, second embodiment is the same with first embodiment, and this pixel bright spot can equally with other normal pixel present stain and white point respectively behind the laser preparing when complete black picture inspection is checked with complete white picture, and can not produce the problem of the flicker of little bright spot.
Therefore, the dot structure of bright point repairing of the present invention can effectively improve repairing quality and efficient.
In sum, the invention provides a dot structure, pixel has and the partly overlapping semiconductor electrode of a suspension joint metal that is positioned at grid electrode layer, and source electrode line and drain electrode all have semi-conducting electrode and the partly overlapping protuberance of suspension joint metal therewith, in case when finding that this pixel is bright spot, form a diode structure with filter effect to electrically connect source electrode line and suspension joint metal with the protuberance of a laser beam irradiation source electrode line, if an independent discharge path will be provided, the diode structure of a symmetry also can be set in addition again, therefore, bright spot presents the white point and the stain that can not glimmer in complete white picture inspection and complete black picture inspection respectively after repairing.
Above-described embodiment only is for technological thought of the present invention and characteristics are described, its purpose makes person skilled in the art scholar can understand content of the present invention and is implementing according to this, when not limiting claim of the present invention with it, all variation that is equal to or modifications of doing according to disclosed spirit must be encompassed in the claim scope of the present invention.
Claims (12)
1. dot structure comprises:
One grid electrode layer, it is arranged on the substrate, and this grid electrode layer comprises a gate line and the one first suspension joint metal electrically isolated with this gate line;
One gate insulator, it is arranged on this grid electrode layer;
Semi-conductor layer, it is arranged on this gate insulator and comprises one first semi-conducting electrode and one second semi-conducting electrode isolated with this first semi-conducting electrode, and this second semi-conducting electrode is to overlap with this first suspension joint metal; And
The source electrode layer, it comprises an one source pole line and a drain electrode, this source electrode line is arranged on this gate insulator and has and this first suspension joint metal and the partly overlapping one first source electrode line protuberance of this second semi-conducting electrode, this drain electrode is partly to be positioned on this first semi-conducting electrode to be positioned on this gate insulator with part, and this drain electrode has and this first suspension joint metal and the partly overlapping one first drain electrode protuberance of this second semi-conducting electrode.
2. dot structure as claimed in claim 1 is characterized in that this grid electrode layer also comprises a capacitor storage beam, and this capacitor storage beam, this gate line and this first suspension joint metal are electrically isolated.
3. dot structure as claimed in claim 1, it is characterized in that this source/drain electrode layer also comprises the one source pole electrode that links to each other with this source electrode line, this source electrode and this drain electrode is oppositely arranged and part is positioned on this first semi-conducting electrode and part is positioned on this gate insulator.
4. dot structure as claimed in claim 1 is characterized in that also comprising a protection insulation course and covers this source/drain electrode layer.
5. dot structure as claimed in claim 4 is characterized in that also comprising a pixel electrode and is arranged on this protection insulation course.
6. dot structure as claimed in claim 5 is characterized in that this pixel electrode is to electrically connect with a contact hole and this drain electrode.
7. dot structure as claimed in claim 1 is characterized in that also comprising:
One second suspension joint metal, this gate line, this first suspension joint metal and this second suspension joint metal are electrically isolated;
One the 3rd semi-conducting electrode, the 3rd semi-conducting electrode are to overlap with this second suspension joint metal and this first semi-conducting electrode, this first semi-conducting electrode and the 3rd semi-conducting electrode are electrically insulated from each other; And
One second source electrode line protuberance, this second source electrode line protuberance is to overlap with this second suspension joint metal and the 3rd semi-conducting electrode, this drain electrode is partly to be positioned on this first semi-conducting electrode to be positioned on this gate insulator with part, and this drain electrode also has one second drain electrode protuberance, and this second drain electrode protuberance is to overlap with this second suspension joint metal and the 3rd semi-conducting electrode.
8. dot structure as claimed in claim 7 is characterized in that this grid electrode layer also comprises a capacitor storage beam, and this capacitor storage beam, this gate line, this first suspension joint metal and this second suspension joint metal are electrically isolated.
9. dot structure as claimed in claim 7, it is characterized in that this source/drain electrode layer also comprises the one source pole electrode that links to each other with this source electrode line, this source electrode and this drain electrode is oppositely arranged and part is positioned on this first semi-conducting electrode and part is positioned on this gate insulator.
10. dot structure as claimed in claim 7 is characterized in that also comprising a protection insulation course and covers this source/drain electrode layer.
11. dot structure as claimed in claim 10 is characterized in that also comprising a pixel electrode and is arranged on this protection insulation course.
12. dot structure as claimed in claim 11 is characterized in that this pixel electrode is to electrically connect with a contact hole and this drain electrode.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2006101373989A CN100483236C (en) | 2006-10-16 | 2006-10-16 | Pixel structure capable of avoiding black-white point flickering after laser repairing |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2006101373989A CN100483236C (en) | 2006-10-16 | 2006-10-16 | Pixel structure capable of avoiding black-white point flickering after laser repairing |
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| CN101165577A CN101165577A (en) | 2008-04-23 |
| CN100483236C true CN100483236C (en) | 2009-04-29 |
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| CNB2006101373989A Active CN100483236C (en) | 2006-10-16 | 2006-10-16 | Pixel structure capable of avoiding black-white point flickering after laser repairing |
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| CN109541868B (en) * | 2018-12-29 | 2022-04-26 | 成都中电熊猫显示科技有限公司 | Correction method, correction device and storage medium |
| CN109491115A (en) * | 2019-01-15 | 2019-03-19 | 深圳市华星光电技术有限公司 | Integrated coloured silk membranous type array substrate restorative procedure |
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Effective date of registration: 20160812 Address after: The Marshall Islands Majuro Adger Island Road trust company Tektronix Tektronix Adger areas MH96960 Patentee after: Hao Chi intangible asset management Investment Limited Address before: Taiwan Taoyuan bade China Peace Road No. 1127 Patentee before: Chunghwa Picture Tubes Ltd. |
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Effective date of registration: 20161205 Address after: 430070 Hubei City, Wuhan Province, East Lake Development Zone, high tech Avenue, No. 666 biological city C5 building, Patentee after: Wuhan Hua Xing photoelectricity technology corporation, Ltd. Address before: The Marshall Islands Majuro Adger Island Road trust company Tektronix Tektronix Adger areas MH96960 Patentee before: Hao Chi intangible asset management Investment Limited |