CN100476045C - Gallium-nitride metal organic-matter chemical gas-phase depositing apparatus for super-high vertical reactor - Google Patents
Gallium-nitride metal organic-matter chemical gas-phase depositing apparatus for super-high vertical reactor Download PDFInfo
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- CN100476045C CN100476045C CNB2007100138204A CN200710013820A CN100476045C CN 100476045 C CN100476045 C CN 100476045C CN B2007100138204 A CNB2007100138204 A CN B2007100138204A CN 200710013820 A CN200710013820 A CN 200710013820A CN 100476045 C CN100476045 C CN 100476045C
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- 238000000151 deposition Methods 0.000 title claims description 11
- 229910052751 metal Inorganic materials 0.000 title claims description 11
- 239000002184 metal Substances 0.000 title claims description 11
- 229910002601 GaN Inorganic materials 0.000 title claims description 10
- 239000005416 organic matter Substances 0.000 title claims description 10
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 title claims description 9
- 239000000126 substance Substances 0.000 title claims description 5
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 38
- 229910002804 graphite Inorganic materials 0.000 claims abstract description 38
- 239000010439 graphite Substances 0.000 claims abstract description 38
- 230000005540 biological transmission Effects 0.000 claims description 27
- 238000006243 chemical reaction Methods 0.000 claims description 18
- 241000283216 Phocidae Species 0.000 claims description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 4
- 239000011521 glass Substances 0.000 claims description 3
- 239000000463 material Substances 0.000 abstract description 23
- 230000012010 growth Effects 0.000 abstract description 22
- 238000005516 engineering process Methods 0.000 abstract description 11
- 238000010438 heat treatment Methods 0.000 abstract description 10
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 abstract description 5
- 238000000034 method Methods 0.000 abstract description 5
- 238000002474 experimental method Methods 0.000 abstract description 4
- 230000005855 radiation Effects 0.000 abstract description 4
- 238000005229 chemical vapour deposition Methods 0.000 abstract description 2
- 239000007789 gas Substances 0.000 description 27
- 235000012431 wafers Nutrition 0.000 description 12
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 12
- 238000002156 mixing Methods 0.000 description 8
- 238000000407 epitaxy Methods 0.000 description 6
- CHPZKNULDCNCBW-UHFFFAOYSA-N gallium nitrate Chemical compound [Ga+3].[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O CHPZKNULDCNCBW-UHFFFAOYSA-N 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 6
- 229910052782 aluminium Inorganic materials 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 238000001816 cooling Methods 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 4
- 238000002360 preparation method Methods 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 3
- 238000013461 design Methods 0.000 description 3
- 229940044658 gallium nitrate Drugs 0.000 description 3
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 3
- 238000007789 sealing Methods 0.000 description 3
- 239000002826 coolant Substances 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- -1 gallium nitride compound Chemical class 0.000 description 1
- 150000004678 hydrides Chemical class 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 150000002894 organic compounds Chemical class 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 238000000197 pyrolysis Methods 0.000 description 1
- 238000007634 remodeling Methods 0.000 description 1
- 230000008439 repair process Effects 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 230000034655 secondary growth Effects 0.000 description 1
- 239000006104 solid solution Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 239000002912 waste gas Substances 0.000 description 1
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Abstract
The present invention provides a high vertical reactor GaN metal-organic chemical vapor deposition method equipment, which can solve the existing technologies of the growth of high-alumina materials group were limited, and other issues. The invention of the technology programme, which covers the reactor tube the ratio of D/ H in between 0.16 -0.5. Because of the high degree of control and a significant increase compared with the existing technology, the gas from heating vents in the graphite blocks from the extended response from indoor heating can be avoided in the high temperature thermal radiation, which can epitomical growth of high-alumina group GaN materials, experiments show that the growth of the group Al materials up to 85%.
Description
Technical field
The present invention relates to photoelectron and microelectronics, relate in particular to gallium nitrate based metallorganics vapour deposition epitaxial growth equipment.
Background technology
Metal organic-matter chemical gas-phase depositing Metal Organic Chemical VaporDeposition (being called for short MOCVD) is state-of-the-art in the world at present electric thin material preparation method.It is a new technology of the preparation compound semiconductor thin slice monocrystalline that put forward by U.S. Rockwell International in nineteen sixty-eight, this technology be the hydride etc. that adopts the organic compound of III family, II family element and V family, VI element as the growth source material, with pyrolysis in the enterprising promoting the circulation of qi phase epitaxy of substrate, growth III-V family, the film of II-VI compound semiconductor and their multivariate solid solution.
Through the development that last century, the seventies arrived the eighties, the nineties has become the core growth technology of photoelectron material epitaxial wafers preparations such as gallium arsenide, indium phosphide.It simultaneously also is the main method for preparing gallium nitrate based (GaN) opto-electronic device and electron device epitaxial wafer at present.This method all relies on MOCVD equipment to realize, therefore MOCVD equipment has become the optimal sophisticated equipment of current growth of semiconductor film material in the world and preparation, this equipment collection precision optical machinery, semiconductor material, vacuum electronic, hydromeehanics, optics, chemistry, computer is multidisciplinary is one, be a kind of level of automation height, cost an arm and a leg, most advanced and sophisticated photoelectron specific equipment that the technology integrated level is high.
Reactor is one of key part of total system for this equipment.It plays crucial effects to the epitaxy quality and the cost of system.
With regard to the reactor in the equipment: generally the structure according to reactor can be divided into horizontal and vertical two kinds, referring to Fig. 1, Fig. 2 and Fig. 3.
Because the growth homogeneity and the doping characteristic of vertical reactor are better than horizontal reactor, the reactor of the material of GaN growth at present generally adopts vertical structure.
But the diameter D of present employed vertical reactor pipe in it and the ratio D/H of height H: generally all near or greater than 1, as shown in Figure 2.
Existing vertical reactor exist one of problem be the gallium nitride compound material of the high alumina component that is not suitable for growing.This mainly is because the melting temperature (Tm) of aluminium is very low, and very easily oxidation, especially ultralow vertical reactor, because it is too near from the heating member graphite block to be positioned at the gas spout of reactor ceiling, although generally on ceiling, all be provided with water-chilling plant, but still can't avoid influence from the high temperature heat radiation of reaction chamber internal heating body, cause can't epitaxy high alumina component material.Use proof: the general vertical reactor material of 20%Al component of can growing at the most, thereby the materials of aluminum component of being grown is limited.
Two of problem is, single graphite base in the reactor has only realized that by the transmission rig of machinery graphite base rotates around reactor center with certain commentaries on classics degree, because epitaxial wafer has only single rotatablely moving when growth, caused grown layer to present thick form of pot bottom on the middle featheredge, the epitaxially grown homogeneity that makes is relatively poor.
Three of problem is that interior pipe, outer tube and the transmission rig of reactor all are fixed on the same base plate.At load and getting in the sheet process, need open reactor head, just can carry out load and get.Because top cover position associated components is more, open and install in the top cover process, need disassembling pipe and web member, be very much trouble, production efficiency is low.
How to solve the problems of the technologies described above, then be the design problem that the present invention faced.
Summary of the invention
The invention provides a kind of gallium-nitride metal organic-matter gas-phase depositing apparatus with super-high vertical reactor, it is limited that it can solve the materials of aluminum component of the growth that prior art exists, the epitaxially grown homogeneity of wafer is relatively poor, load and get problem such as sheet trouble.
In order to reach the purpose that solves the problems of the technologies described above, technical scheme of the present invention is, a kind of gallium-nitride metal organic-matter gas-phase depositing apparatus with super-high vertical reactor, comprise reactor, base plate, inlet pipe, graphite base, transmission rig, the ratio D/H that it is characterized in that diameter of inner pipe D in the described reactor and height H is between 0.16-0.5.
In the present invention, also has following technical characterictic: on lower shoe, be fixed with centre mount, be fixedly connected with ring gear on the centre mount, comprise 3 graphite bases in the reactor, each graphite base is fixed by following vitrified pipe and sun and planet gear, the engagement of sun and planet gear and ring gear, the transmission main shaft top in the transmission rig is fixed with main shaft disk, and three sun and planet gear are installed on three planet pins on the main shaft disk.
In the present invention, also have following technical characterictic: described base plate is made up of upper plate and lower shoe, and the inner and outer pipe of reactor is arranged on the upper plate; Graphite base and transmission rig are arranged on the lower shoe, are provided with two lifting oil/cylinders below lower shoe, and the piston rod top of described cylinder is fastened on the upper plate;
On lower shoe, be provided with the gas connection seat, the gas plug is set below upper plate, be with spring between below gas plug and the upper plate;
Below upper plate and/or with the bonding surface of upper plate contact component on be provided with some grommet type sealss.
In the present invention, also have following technical characterictic: reactor head is provided with infrared thermometer.
In the present invention, also have following technical characterictic: be provided with a thermopair in three graphite base central authorities, it is to pass the center that places three graphite bases through hollow transmission main shaft.
In the present invention, also have following technical characterictic: the interior pipe in the reactor adopts transparent silica glass to make, and outer tube adopts synthetic glass to make.
The present invention mainly is development, exploitation and the production of this metal organic-matter chemical gas-phase depositing material growing device, innovative point is the proportionlity of D/H, the design of super-high vertical reactor, multiple III-V group iii v compound semiconductor material mainly is widely used in growing, particularly be applicable to the growth of gallium nitrate based thin-film material, as: the growth of ultra-thin rete structured material such as heterojunction structure and superlattice quantum well and semiconductor material with wide forbidden band.These materials are mainly used in manufacturing: (1) photoelectric device: laser apparatus (LD), photodiode (LED) and photodetector etc., (2) electron device: microwave power device (HFET) etc.
The experiment proved that the present invention has following beneficial effect:
1. the ratio D/H of diameter of inner pipe and height is between 0.16 to 0.5, the height of interior pipe compared with prior art greatly improves, gas spout is from the distance lengthening of heating member graphite block, can avoid influence from the high temperature heat radiation of reaction chamber internal heating body, thereby material that can epitaxy high alumina component, experiment shows that the material of Al component of growth is up to 85%.
2. load and get sheet for convenience, reactor design becomes two portions up and down, is located at respectively on the upper and lower base plate, and two oil/cylinders by lower shoe can be with reactor top jack-up, thereby easily wafer and graphite base is taken out or pack into.
3. graphite base is done rotation and revolution motion with certain speed around reactor center, because the aggregate motion of rotation and revolution, thereby guaranteed the homogeneity that epitaxial wafer is grown on the pedestal.
4.MO and NH
3Top by reactor enters gas mixing chamber, makes after this moment mixing and enters reactor, and the air-flow of epitaxial wafer is extracted out by the bottom on the pedestal of flowing through.Thereby guaranteed before arriving epitaxial wafer, the gas phase pre-reaction can not take place, and steady air current, there is not eddy current to produce.The experiment proved that this reactor is in epitaxy, the chip of reactor does not have the gas phase pre-reaction substantially with top, and is very clean, and the general some months that only needs cleans once.
Reaction chamber adopts transparent silica glass to make, the epitaxy situation that can observe chip at any time when growth.
Compare with the reactor of the MOCVD SYSTEM of existing several external productions at present, the maximum characteristics that this reactor has are:
1.. simple in structure, practical, dismounting and cleaning are convenient, cheap;
2.. especially as the graphite base of consumable accessory, simple in structure, cost is low, can in time change and clean in each growth back, can use repeatedly; Thereby avoided of the influence of the deposit of the last secondary growth on the graphite base to diauxic growth.
Description of drawings
Below in conjunction with drawings and Examples the present invention is described in detail.
Fig. 1 is the structural representation of prior art horizontal reactor;
Fig. 2 is the structural representation of prior art vertical reactor;
Fig. 3 is the structural representation of the ultralow horizontal reactor of prior art;
50. growth gasses; 60. epitaxial growth chip; 70. induction heating circle; 80. graphite base; 90. waste gas.
Fig. 4 is the in running order sectional view of gallium-nitride metal organic-matter gas-phase depositing apparatus that the present invention has super-high vertical reactor;
Fig. 5 is the A-A part sectioned view among Fig. 4;
Fig. 6 is that the gallium-nitride metal organic-matter gas-phase depositing apparatus that the present invention has a super-high vertical reactor is in the open mode sectional view.
1-1. inlet pipe; 1-2. following of gas connection; The 1-3 gas connection seat of honour; 1-4. cooling nozzle; 1-5. gas mixing chamber; 1-6. last base; 1-7. infrared measurement of temperature instrument; 2-1. epitaxial wafer; 2-2. graphite base; 2-3. load coil; 2-4. vitrified pipe; 2-5. outer tube; 2-6. interior pipe; 2-7. bottom nozzle; 2-8. thermopair; 2-9. ruhmkorff coil tie cable; 2-10. ruhmkorff coil water coolant interface; The 2-11 reaction chamber; 3-1. upper plate; 3-2. ring gear; 3-3. sun and planet gear; 3-4. centre mount; 3-5. main shaft disk; 3-6. planet pin; 4-1. lower shoe; 4-2. connect main vacuum pump; 4-3. connect backing vacuum pump; 4-4. lifting oil/cylinder; 4-5. cross cross pipe; 4-6. transmission main shaft; 4-7. drive sleeve; 4-8. strong magnets; 4-9. magnetic force shifting block; 4-10. frequency control motor; Belt pulley and belt 4-11.
Embodiment
Referring to Fig. 4, Fig. 5 and Fig. 6,
The gallium-nitride metal organic-matter gas-phase depositing apparatus of super-high vertical reactor of the present invention mainly by:
1. top air chamber; 2. reactor, 3. reactor base and 4. four most of compositions such as transmission rig.
Describe in detail respectively below.
1. top air chamber: mainly comprise gas mixing chamber 1-5; Last base 1-6; Parts such as top seal seat and infrared thermometer 1-7;
NH
3With MO gas respectively from inlet pipe 1-1, through the following 1-2 of gas connection, gas connection seat of honour 1-3 enters the top and enters gas mixing chamber 1-5.Many apertures are arranged at the bottom of gas mixing chamber 1-5, the reaction chamber 2-11 of mixed gas below these apertures flow to; Owing to be positioned at the thermal radiation that the graphite base 2-2 of reaction chamber 2-11 central authorities is produced when being heated, the temperature of gas mixing chamber is raise, be provided with water cooling chamber in the last base 1-6, its effect is the temperature that reduces gas mixing chamber 1-5, prevents NH
3Mix the back with two kinds of gases of MO at this pre-reaction takes place; Last base 1-6 is provided with into water and two interface 1-4 of water outlet, and water-in and the water return outlet with cooling system links respectively.Infrared measurement of temperature instrument 1-7 can directly test the temperature of epitaxial wafer by the window at top.
2. reactor is double-deck, and interior pipe 2-6 is that transparent silica glass is made, and outer tube 2-5 makes with transparent synthetic glass, and two ends are fixed by last base 1-6 and bottom nozzle 2-7 and sealed, and the centre is connected with water coolant.Last base 1-6 and bottom sealing socket 2-7 are provided with grommet type seals and water inlet pipe and water outlet pipe, and this water inlet pipe and water outlet pipe connects with the water outlet and the return water pipe of cooling system respectively.Reaction chamber 2-11 inner planet is distributed with three graphite base 2-2, and the epitaxial wafer 2-1 of growth usefulness just is placed on their top.Be provided with a thermopair 2-8 in three graphite base 2-2 central authorities, it is the center of three graphite base 2-2 that places through hollow transmission main shaft, thus the temperature when recording graphite base 2-2 heating.
The ratio D/H of diameter of inner pipe and height thereby is called super-high vertical reactor between 0.16 to 0.5 in the scope, can grow up to the gallium nitride-based material of 85%Al component.
3. reaction chamber base portion: the entire reaction chamber is fixed on the upper plate 3-1 of reaction chamber, this base plate 3-1 is connected with the piston rod of the hoist cylinder 4-4 at two ends, the left and right sides, motion by these two oil cylinder 4-4, the unlatching rising and closed decline of reaction chamber have been realized, wherein load coil 2-3 is fixed on this upper plate 3-1, and moves up and down with reaction chamber 2-11.
Oil cylinder 4-4 cylinder sleeve partly is arranged on 4-1 on the lower shoe, and graphite base 2-2 and transmission rig are arranged on 4-1 on the lower shoe.
On lower shoe 4-1, be provided with the following 1-2 of gas connection, gas connection seat of honour 1-3 is set below upper plate 3-1, be with spring between below gas connection seat of honour 1-3 and the upper plate 3-1, in the time of in working order, gas connection seat of honour 1-3 is pressed on the following 1-2 of gas connection tightly by the hydraulic coupling of oil cylinder 4-4 and the effect of spring.
Be equipped with grommet type seals above the 1-2 at upper plate 3-1 lower surface and following of gas connection, to be implemented in the seal request of working order.
When the need load, when getting sheet, make oil cylinder 4-4 be in propradation, the piston rod in the oil cylinder 4-4 rises, and upper plate 3-1 and the parts on it are raised up to state shown in Figure 6, and graphite base 2-2 exposes, thereby can carry out load or get sheet work.
During working order, oil cylinder 4-4 is in the state of Fig. 4, and piston rod pulls down upper plate 3-1, to guarantee the requirement of sealing.
This shows that reactor is by being located at the hoist cylinder 4-4 on the upper and lower base plate, lifting easily is convenient to load, is got sheet and maintenance and repair.
4. transmission rig: this part is made up of transmission main shaft 4-6 and drive sleeve 4-7, belt pulley, belt 4-11 and motor 4-10 etc., in order to guarantee the stopping property of reaction chamber, is to isolate and sealing between transmission main shaft 4-6 and the drive sleeve 4-7.On transmission main shaft 4-6, be provided with a magnetic force and set 4-9 ahead, two of strong magnets are housed above it, and on the outer drive sleeve 4-7 also correspondence two strong magnets 4-8 are housed.When the rotation of drive sleeve 4-7, the effect by magnetic force drives transmission main shaft 4-6 and rotates, and the rotation of drive sleeve 4-7 is by belt 4-11 transmission, is driven by frequency control motor 4-10.
On lower shoe 4-1, be fixed with centre mount 3-4, be fixedly connected with ring gear 3-2 on the centre mount 3-4, comprise 3 graphite base 2-2 in the reaction chamber, each graphite base 2-2 installs respectively on 3 vitrified pipe 2-4, sun and planet gear 3-3 is housed below the vitrified pipe 2-4, sun and planet gear 3-3 and ring gear 3-2 engagement, transmission main shaft 4-6 top is connected with main shaft disk 3-5, and three sun and planet gear 3-3 are contained on the planet pin 3-6 of main shaft disk 3-5.
Frequency control motor 4-10 rotates, driving drive sleeve 4-7 by belt pulley and belt 4-11 rotates, strong magnets 4-8 follows rotation, the magnetic force shifting block 4-9 that is fixed on the transmission main shaft 4-6 follows rotation under the effect of strong magnets 4-8, and then drive transmission main shaft 4-6 rotates, thereby main shaft disk 3-5 rotates, thereby drive three sun and planet gear 3-3 simultaneously and 3 graphite base 2-2 do revolution, simultaneously, sun and planet gear 3-3 under 3 graphite base 2-2 and ring gear 3-2 engagement, by the internal wheel transmission, realize black pedestal 2-2 rotation, thereby guarantee that graphite base 2-2 goes up the homogeneity of epitaxial wafer growth.
Be provided with a thermopair 2-8 in three graphite base 2-2 central authorities, it is the center of three graphite base 2-2 that places through hollow transmission main shaft 4-6, thus the temperature when recording graphite base 2-2 heating, as the foundation of control Heating temperature.
The above only is preferred embodiment of the present invention, is not to be the restriction of the present invention being made other form, and any those skilled in the art may utilize the technology contents of above-mentioned announcement to be changed or be modified as the equivalent embodiment of equivalent variations.But every technical solution of the present invention content that do not break away to any simple modification, equivalent variations and remodeling that above embodiment did, still belongs to the protection domain of technical solution of the present invention according to technical spirit of the present invention.
Claims (6)
1. the gallium-nitride metal organic-matter chemical gas-phase depositing apparatus of a super-high vertical reactor comprises reactor, base plate, inlet pipe, graphite base, transmission rig, the ratio D/H that it is characterized in that diameter of inner pipe D in the described reactor and height H is between 0.16-0.5.
2. equipment according to claim 1 is characterized in that described base plate is made up of upper plate and lower shoe, and the inner and outer pipe of reactor is arranged on the upper plate; Graphite base and transmission rig are arranged on the lower shoe, are provided with at least two lifting oil/cylinders below lower shoe, and the piston rod top of described cylinder is fastened on the upper plate;
On lower shoe, be provided with following of gas connection, the gas connection seat of honour is set below upper plate, be with spring between below the gas seat of honour and the upper plate;
Below upper plate and/or with the bonding surface of upper plate contact component on be provided with some grommet type sealss.
3. equipment according to claim 1 and 2, it is characterized in that on lower shoe, being fixed with centre mount, be fixedly connected with ring gear on the centre mount, comprise 3 graphite bases in the reaction chamber, vitrified pipe and sun and planet gear are housed below each graphite base, the engagement of sun and planet gear and ring gear, the transmission main shaft top in the transmission rig is fixed with main shaft disk, and three sun and planet gear are installed on three planet pins on the main shaft disk.
4. equipment according to claim 3 is characterized in that reactor head is provided with infrared thermometer.
5. equipment according to claim 4 is characterized in that being provided with a thermopair in three graphite base central authorities, and it is to pass the center that hollow transmission main shaft places three graphite bases.
6. equipment according to claim 5 is characterized in that the interior pipe in the reactor adopts transparent silica glass to make, and outer tube adopts synthetic glass to make.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2007100138204A CN100476045C (en) | 2007-03-15 | 2007-03-15 | Gallium-nitride metal organic-matter chemical gas-phase depositing apparatus for super-high vertical reactor |
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| CNB2007100138204A CN100476045C (en) | 2007-03-15 | 2007-03-15 | Gallium-nitride metal organic-matter chemical gas-phase depositing apparatus for super-high vertical reactor |
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| CN100476045C true CN100476045C (en) | 2009-04-08 |
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| CN106337202B (en) * | 2015-07-17 | 2018-11-06 | 中国科学院苏州纳米技术与纳米仿生研究所 | A kind of gas shower apparatus for high temperature crystal growth |
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