CN100474505C - 形成硅外延测试片的方法 - Google Patents
形成硅外延测试片的方法 Download PDFInfo
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- CN100474505C CN100474505C CNB2006101161006A CN200610116100A CN100474505C CN 100474505 C CN100474505 C CN 100474505C CN B2006101161006 A CNB2006101161006 A CN B2006101161006A CN 200610116100 A CN200610116100 A CN 200610116100A CN 100474505 C CN100474505 C CN 100474505C
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- silicon
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- silicon epitaxy
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CNB2006101161006A CN100474505C (zh) | 2006-09-15 | 2006-09-15 | 形成硅外延测试片的方法 |
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CNB2006101161006A CN100474505C (zh) | 2006-09-15 | 2006-09-15 | 形成硅外延测试片的方法 |
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CN101145500A CN101145500A (zh) | 2008-03-19 |
CN100474505C true CN100474505C (zh) | 2009-04-01 |
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CNB2006101161006A Expired - Fee Related CN100474505C (zh) | 2006-09-15 | 2006-09-15 | 形成硅外延测试片的方法 |
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Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
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CN101697340B (zh) * | 2009-10-28 | 2012-10-03 | 上海宏力半导体制造有限公司 | 刻蚀工艺用的挡片及防止挡片跳片的方法 |
CN110797256A (zh) * | 2019-11-12 | 2020-02-14 | 河北普兴电子科技股份有限公司 | 碳化硅缓冲层电阻率的测试方法 |
CN112185837A (zh) * | 2020-09-29 | 2021-01-05 | 上海华虹宏力半导体制造有限公司 | 测试片的筛选方法以及快速热处理工艺的监测方法 |
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C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
C56 | Change in the name or address of the patentee |
Owner name: SHANGHAI HUAHONG GRACE SEMICONDUCTOR MANUFACTURING Free format text: FORMER NAME: HUAHONG NEC ELECTRONICS CO LTD, SHANGHAI |
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CP03 | Change of name, title or address |
Address after: 201203 Shanghai city Zuchongzhi road Pudong New Area Zhangjiang hi tech Park No. 1399 Patentee after: Shanghai Huahong Grace Semiconductor Manufacturing Corporation Address before: 201206, Shanghai, Pudong New Area, Sichuan Road, No. 1188 Bridge Patentee before: Shanghai Huahong NEC Electronics Co., Ltd. |
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CF01 | Termination of patent right due to non-payment of annual fee | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20090401 Termination date: 20200915 |