CN100469952C - Laser crystal of Nd doped strontium gadolinium borate - Google Patents
Laser crystal of Nd doped strontium gadolinium borate Download PDFInfo
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- CN100469952C CN100469952C CNB2004101010577A CN200410101057A CN100469952C CN 100469952 C CN100469952 C CN 100469952C CN B2004101010577 A CNB2004101010577 A CN B2004101010577A CN 200410101057 A CN200410101057 A CN 200410101057A CN 100469952 C CN100469952 C CN 100469952C
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- crystal
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- crystalline
- doped strontium
- gadolinium borate
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Abstract
The present invention relates to artificial crystal technology, and is especially a kind of laser crystal of Nd-doped strontium gadolinium borate and its preparation process. The Nd-doped strontium gadolinium borate crystal is prepared through Czochralski method at growth temperature of 1450 deg.c, pulling speed of 0.7-2 mm/hr and crystal rotation speed of 15-30 rpm. The said process can grow high quality and large size laser crystal of Nd-doped strontium gadolinium borate.
Description
Technical field the present invention relates to artificial lens and the field of crystal growth in the technical field of optoelectronic functional materials, especially relates to the laser crystal material of the operation material in a kind of solid laser.
The background technology laser crystals is the operation material of solid statelaser, and it is meant with the crystal to be matrix, by discrete luminescence center absorptive pumping luminous energy and be translated into the luminescent material of laser output.The various physics of laser crystals and chemical property are mainly by the substrate material decision, and its spectral response curve and fluorescence lifetime etc. are then determined by the level structure of active ions.From nineteen sixty, succeeded in developing since the synthetic ruby pulsed laser, up to now, found hundreds of laser crystalss, but because of a variety of causes, the laser crystals that can really obtain practical application has only ten to plant.
At present, most widely used laser crystals is yttrium aluminum garnet (YAG) crystal of Nd ion doped, and it has various preferably physics and chemical property, and is easy to grow high optical quality, large-sized gem-quality crystal.But it is narrow that it exists spectral line of absorption, is unwell to the shortcoming of carrying out pumping with LD, and the LD pumping will be the developing direction of laser pumping source from now on.
Actively seek various physics, chemical property and mechanical property excellence, and be easy to grow high optical quality, large-sized high-quality laser crystal material, and this crystal will be suitable for the LD pumping, this is the ongoing work of present various countries scientist.Neodymium ion is used as active ions widely owing to have spectrum property preferably; And borate also becomes the choosing of the hot topic of laser host material owing to have better physical chemistry and mechanical property.
Summary of the invention purpose of the present invention just is to develop a kind of new laser crystal Nd-doped boracic acid gadolinium strontium [Nd:Sr
3Gd
2(BO
3)
4], can directly use photoflash lamp and LD pumping, laser crystal material with higher conversion efficiency.
With the Nd:Sr that grows
3Gd
2(BO
3)
4Crystal has carried out the collection of diffraction data on four-circle diffractometer, structural analysis shows that it belongs to rhombic system, and spacer is Pnma, and unit cell parameters is
Z=4, adopting oil-immersion method to record its specific refractory power is 1.77.Wherein neodymium ion is as dopant ion, replace the crystallographic site of gadolinium ion, the doping content of neodymium is between 0.5at%～15at%, and fluorescence lifetime (τ) is 82.3-48.1 μ s, its fluorescence lifetime is the function of neodymium ion concentration, can mix the neodymium ion of different concns according to different needs.Experimental result shows the laser of its exportable 1060nm wavelength, can be used as laser crystals.
This crystal is used for solid statelaser as working-laser material, uses photoflash lamp or laser diode as pumping source, excites the laser output that produces the 1060nm wavelength.The solid statelaser made from this crystal is used for spectroscopy, biomedicine, military field.
Nd:Sr
3Gd
2(BO
3)
4Crystal is a kind of compound of congruent melting, can adopt Czochralski grown, presses chemical equation: Gd
2O
3+ 3SrCO
3+ 4H
3BO
3=Sr
3Gd
2(BO
3)
4+ 6H
2O+3CO
2Ratio claim sample, mixing, compressing tablet, and Nd
2O
3Then press desired concn and add, raw materials usedly be: Nd
2O
3(purity 99.95%, Changchun Applied Chemistry Research Inst., Chinese Academy of Sciences), Gd
2O
3(purity 99.99%, Changchun Applied Chemistry Research Inst., Chinese Academy of Sciences), SrCO
3(purity 99.95%, Shanghai chemical reagents corporation of Chinese Medicine group), H
3BO
3(purity 99.99%, Beijing Chemical Plant), growth adopts platinum alloy crucible, at rare gas element (as N
2, Ar etc.) carry out under the atmosphere, the parameter of crystal growth is about 1450-1500 ℃ of growth temperatures, pull rate is 0.7～2.mm/h, the crystal rotating speed is 15～30rmp, has grown high-quality Nd:Sr
3Gd
2(BO
3)
4Crystal.
With the Nd:Sr that grows
3Gd
2(BO
3)
4Crystal carries out the analytical test of absorption spectrum, fluorescence spectrum and fluorescence lifetime etc., and the result shows (to mix 5at%Nd
3+Sr
3Gd
2(BO
3)
4Crystal is an example): Nd:Sr
3Gd
2(BO
3)
4Crystalline master absorption peak is at 807nm, and its peak width at half height is 15nm, and the absorption jump cross section is 6.36 * 10
-20Cm
2, be very suitable for adopting the AsGaAl semiconductor laser to carry out pumping in the bigger peak width at half height in 808nm place, help the absorption of laser crystals to pump light, improve pumping efficiency.It is at the emission transition cross section σ at 1060nm place
EmBe 1.09 * 10
-19Cm
2, peak width at half height (FWHM) is 30.2nm, fluorescence lifetime is 51.7 μ s, because the long crystal of fluorescence lifetime can accumulate more particle at last energy level, has increased energy storage, helps the raising of device output rating and output energy.Therefore, Nd:Sr
3Gd
2(BO
3)
4Crystal can obtain bigger output, is a kind of high conversion efficiency, low cost, high optical quality and actual application prospect is arranged and the laser crystals of use value.
Nd:Sr
3Gd
2(BO
3)
4Crystal can grow superior in quality crystal easily with crystal pulling method, fast growth, the crystal quality is hard, has good heat-conducting, good optical characteristics, be easy to obtain laser output with flash lamp pumping and LD pumping, laser output wavelength is 1060nm, and this crystal can be used as a kind of laser crystals preferably.
Nd:Sr of the present invention
3Gd
2(BO
3)
4Crystal is a kind of compound with the composition fusing, can adopt Czochralski grown, and its growth cycle is lacked, can be obtained the large-sized crystal of high quality.We find suitable solid phase synthesis process and preferable growth conditions in experimentation, adopt crystal pulling method to grow the crystal of the high optical quality that is of a size of Φ 20.5mm * 50mm.
Embodiment
Embodiment 1: the Czochralski grown doping content is 2.0at.%Nd
3+Nd:Sr
3Gd
2(BO
3)
4Laser crystals.
Will be by the load weighted SrCO of proportion speed
3, Gd
2O
3, H
3BO
3, Nd
2O
3Mixed grinding is even, behind the compressing tablet, puts into φ 60 * 40mm
3Platinum alloy crucible in, in retort furnace,, be warming up to 1200 ℃ of reactions 10 hours again in 1000 ℃ of solid state reactions 12 hours.Synthetic good above sample is put into lifting furnace, adopt crystal pulling method, at N
2In the atmosphere, growth temperature is that 1350 ℃, crystal rotating speed are 15rmp, and pulling rate is under the situation of 1mm/h, has grown and has been of a size of 45 * 25 * 20mm
3High-quality Nd
3+Content is the Nd:Sr of 2.0at.%
3Gd
2(BO
3)
4Crystal.
Embodiment 2: the Czochralski grown doping content is 5.0at.%Nd
3+Nd:Sr
3Gd
2(BO
3)
4Laser crystals.
Will be by the load weighted SrCO of proportion speed
3, Gd
2O
3, H
3BO
3, Nd
2O
3Mixed grinding is even, behind the compressing tablet, puts into φ 60 * 40mm
3Platinum alloy crucible in, in retort furnace,, be warming up to 1100 ℃ of reactions 8 hours again in 1050 ℃ of solid state reactions 10 hours.Synthetic good above sample is put into lifting furnace, adopt crystal pulling method, in Ar atmosphere, growth temperature is that 1450 ℃, crystal rotating speed are 15rmp, and pulling rate is under the situation of 0.5mm/h, has grown to be of a size of 30 * 20 * 23mm
3High-quality Nd
3+Content is the Nd:Sr of 5.0at.%
3Gd
2(BO
3)
4Crystal.
Claims (4)
1. laser crystal of Nd doped strontium gadolinium borate, it is characterized in that: this crystalline molecular formula is Nd:Sr
3Gd
2(BO
3)
4, belonging to rhombic system, spacer is Pnma, unit cell parameters is:
Z=4, specific refractory power is 1.77, Nd
3+Ion replaces Gd in the crystal as dopant ion
3+The ionic crystallographic site, its doping content is between 0.5at-15at%.
2. the crystalline preparation method of a claim 1 is characterized in that: this crystal by adopting Czochralski grown, and the crystalline growth temperature is 1450-1500 ℃, and pull rate is 0.7-2mm/h, and the crystal rotating speed is 15-30rmp.
3. the crystalline purposes of a claim 1, it is characterized in that: this crystal is used for solid statelaser as working-laser material, uses photoflash lamp or laser diode as pumping source, excites the laser output that produces the 1060nm wavelength.
4. the crystalline purposes of a claim 1, it is characterized in that: the solid statelaser made from this crystal is used for spectroscopy, biomedicine, military field.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2004101010577A CN100469952C (en) | 2004-12-03 | 2004-12-03 | Laser crystal of Nd doped strontium gadolinium borate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2004101010577A CN100469952C (en) | 2004-12-03 | 2004-12-03 | Laser crystal of Nd doped strontium gadolinium borate |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1782146A CN1782146A (en) | 2006-06-07 |
| CN100469952C true CN100469952C (en) | 2009-03-18 |
Family
ID=36772737
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB2004101010577A Expired - Fee Related CN100469952C (en) | 2004-12-03 | 2004-12-03 | Laser crystal of Nd doped strontium gadolinium borate |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN100469952C (en) |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1013761B (en) * | 1988-12-07 | 1991-09-04 | 日立制作所 | Braking device for elevator winding machine and elevator using the braking device |
| CN1250115A (en) * | 1998-10-05 | 2000-04-12 | 中国科学院福建物质结构研究所 | Self-frequency doubling laser crystal of Nd-doped low temperature phase lanthanum-scandium borate |
-
2004
- 2004-12-03 CN CNB2004101010577A patent/CN100469952C/en not_active Expired - Fee Related
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1013761B (en) * | 1988-12-07 | 1991-09-04 | 日立制作所 | Braking device for elevator winding machine and elevator using the braking device |
| CN1250115A (en) * | 1998-10-05 | 2000-04-12 | 中国科学院福建物质结构研究所 | Self-frequency doubling laser crystal of Nd-doped low temperature phase lanthanum-scandium borate |
Also Published As
| Publication number | Publication date |
|---|---|
| CN1782146A (en) | 2006-06-07 |
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Granted publication date: 20090318 Termination date: 20131203 |