CN100469950C - Fs laser crystal of ytterbium doped strontium yttrium borate - Google Patents
Fs laser crystal of ytterbium doped strontium yttrium borate Download PDFInfo
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- CN100469950C CN100469950C CNB2004101010558A CN200410101055A CN100469950C CN 100469950 C CN100469950 C CN 100469950C CN B2004101010558 A CNB2004101010558 A CN B2004101010558A CN 200410101055 A CN200410101055 A CN 200410101055A CN 100469950 C CN100469950 C CN 100469950C
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Abstract
The present invention relates to artificial crystal technology, and especially a kind of femtosecond laser crystal of Yb-doped strontium yttrium borate and its preparation process. The Yb-doped strontium yttrium borate crystal is prepared through Czochralski method at growth temperature of 1325 deg C, pulling speed of 0.7-2 mm/hr and crystal rotation speed of 15-30 rpm. The said process can grow high quality and large size femtosecond laser crystal of Yb-doped strontium yttrium borate.
Description
Technical field the present invention relates to artificial lens and the field of crystal growth in the technical field of optoelectronic functional materials, especially relates to the Fs laser crystal material of the operation material in a kind of solid-state femto-second laser.
The background technology Fs laser crystal is the operation material of femto-second solid laser device, and it is meant with the crystal to be matrix, by discrete luminescence center absorptive pumping luminous energy and be translated into the luminescent material of laser output.The various physics of Fs laser crystal and chemical property are mainly by the substrate material decision, and its spectral response curve and fluorescence lifetime etc. are then determined by the level structure of active ions.From nineteen sixty-five, pulsed laser technique obtains the picosecond pulse with the passive mode-locking ruby laser and has entered since the ver short range, develops very rapid.The seventies occurred team and hit annular mode-locked dyelaser, the pulse width of laser enters the femtosecond stage.The beginning of the nineties, people's reported first such as spence of the St. Andrews University of Britain the ultrashort pulse that has produced 60fs with the self-locking mode ti sapphire laser.Because titanium jewel solid statelaser tunable range is wide, fluorescence band is roomy, simple in structure, reliability is high, pollution-free, overcome the shortcoming of dye laser, its appearance has started the upsurge that develops the novel solid femto-second laser in the world.
At present, most widely used femto-second solid laser crystal is a titanium gem crystal, and it has various preferably physics and chemical property, and is easy to grow high optical quality, large-sized gem-quality crystal.But it is narrow that it exists spectral line of absorption, is unwell to the shortcoming of carrying out pumping with LD, and the LD pumping will be the developing direction of laser pumping source from now on.
Actively seek various physics, chemical property and mechanical property excellence, and be easy to grow high optical quality, large-sized high-quality laser crystal material, and this crystal will be suitable for the LD pumping, this is the ongoing work of present various countries scientist.Ytterbium ion is used as active ions widely owing to have spectrum property preferably, mixes Yb
3+The ionic laser crystals, the quantum yield height, it is laser diode-pumped to be suitable for InGaAs; And borate also becomes the choosing of the hot topic of laser host material owing to have better physical chemistry and mechanical property.
Summary of the invention purpose of the present invention just is to develop a kind of new laser crystals ytterbium doped strontium yttrium borate [Yb:Sr
3Y
2(BO
3)
4], can directly use photoflash lamp and LD pumping, laser crystal material with higher conversion efficiency.
With the Yb:Sr that grows
3Y
2(BO
3)
4Crystal has carried out the collection of diffraction data on four-circle diffractometer, structural analysis shows that it belongs to rhombic system, and spacer is Pnma, and unit cell parameters is:
Z=4, specific refractory power is 1.74.Wherein ytterbium ion is as dopant ion, replace the crystallographic site of ruthenium ion, the doping content of ytterbium is between 0.5at%～25at%, and fluorescence lifetime (τ) is 3.55-1.03ms, its fluorescence lifetime is the function of ytterbium ion concentration, can mix the ytterbium ion of different concns according to different needs.Experimental result shows the laser of its exportable 1054nm wavelength, can be used as laser crystals.
Yb:Sr
3Y
2(BO
3)
4Crystal is a kind of compound of congruent melting, can adopt Czochralski grown, presses chemical equation: Y
2O
3+ 3SrCO
3+ 4H
3XBO
3=Sr
3Y
2(BO
3)
4+ 6H
2O+3CO
2Ratio claim sample, mixing, compressing tablet, and Yb
2O
3Then press desired concn and add, raw materials usedly be: Yb
2O
3(purity 99.95%, Changchun Applied Chemistry Research Inst., Chinese Academy of Sciences), Y
2O
3(purity 99.99%, Changchun Applied Chemistry Research Inst., Chinese Academy of Sciences), SrCO
3(purity 99.95%, Shanghai chemical reagents corporation of Chinese Medicine group), H
3BO
3(purity 99.99%, Beijing Chemical Plant), growth adopts platinum alloy crucible, at rare gas element (as N
2, Ar etc.) carry out under the atmosphere, the parameter of crystal growth is about 1325-1370 ℃ of growth temperatures, pull rate is 0.7～2.mm/h, the crystal rotating speed is 15～30rmp, has grown high-quality Yb:Sr
3Y
2(BO
3)
4Crystal.
With the Yb:Sr that grows
3Y
2(BO
3)
4Crystal carries out the analytical test of absorption spectrum, fluorescence spectrum and fluorescence lifetime etc., and the result shows (to mix 5at%Yb
3+Sr
3Y
2(BO
3)
4Crystal is an example): Yb:Sr
3Y
2(BO
3)
4Crystalline master absorption peak is at 977nm, and its peak width at half height is 8nm, and the absorption jump cross section is 2.07 * 10
-20Cm
2, be very suitable for adopting the InGaAs semiconductor laser to carry out pumping in the bigger peak width at half height in 977nm place, help the absorption of laser crystals to pump light, improve pumping efficiency.It is at the emission transition cross section σ at 1054nm place
EmBe 0.70 * 10
-19Cm
2, fluorescence lifetime is 1.18ms, because the long crystal of fluorescence lifetime can accumulate more particle at last energy level, has increased energy storage, helps the raising of device output rating and output energy.Therefore, Yb:Sr
3Y
2(BO
3)
4Crystal can obtain bigger output, is a kind of high conversion efficiency, low cost, high optical quality and actual application prospect is arranged and the laser crystals of use value.
Yb:Sr
3Y
2(BO
3)
4Crystal can grow superior in quality crystal easily with crystal pulling method, fast growth, the crystal quality is hard, has good heat-conducting, good optical characteristics is arranged, be easy to obtain laser output with flash lamp pumping and LD pumping, laser output wavelength is 1054nm, and this crystal can be used as a kind of laser crystals preferably.This crystal is used for the femto-second solid laser device as working-laser material, uses photoflash lamp or laser diode as pumping source, excites the laser output that produces the 1054nm wavelength.The femto-second solid laser device made from this crystal is used for information science, biomedicine, ultrafast scientific domain.
Yb:Sr of the present invention
3Y
2(BO
3)
4Crystal is a kind of compound with the composition fusing, can adopt Czochralski grown, and its growth cycle is lacked, can be obtained the large-sized crystal of high quality.We find suitable solid phase synthesis process and preferable growth conditions in experimentation, adopt crystal pulling method to grow the crystal of the high optical quality that is of a size of Φ 15mm * 25mm.
Embodiment
Embodiment 1: the Czochralski grown doping content is 2.0at.%Yb
3+Yb:Sr
3Y
2(BO
3)
4Laser crystals.Will be by the load weighted SrCO of proportion speed
3, Y
2O
3, H
3BO
3, Yb
2O
3Mixed grinding is even, behind the compressing tablet, puts into φ 60 * 40mm
3Platinum alloy crucible in, in retort furnace,, be warming up to 1100 ℃ of reactions 10 hours again in 900 ℃ of solid state reactions 12 hours.Synthetic good above sample is put into lifting furnace, adopt crystal pulling method, at N
2In the atmosphere, growth temperature is that 1325 ℃, crystal rotating speed are 15rmp, and pulling rate is under the situation of 1mm/h, has grown the high-quality Yb that is of a size of Φ 20mm * 30mm
3+Content is the Yb:Sr of 2.0at.%
3Y
2(BO
3)
4Crystal.
Embodiment 2: the Czochralski grown doping content is 5.0at.%Yb
3+Yb:Sr
3Y
2(BO
3)
4Laser crystals.Will be by the load weighted SrCO of proportion speed
3, Y
2O
3, H
3BO
3, Yb
2O
3Mixed grinding is even, behind the compressing tablet, puts into φ 60 * 40mm
3Platinum alloy crucible in, in retort furnace,, be warming up to 1200 ℃ of reactions 20 hours again in 1050 ℃ of solid state reactions 10 hours.Synthetic good above sample is put into lifting furnace, adopt crystal pulling method, in Ar atmosphere, growth temperature is that 1350 ℃, crystal rotating speed are 15rmp, and pulling rate is under the situation of 0.5mm/h, has grown the high quality Yb that is of a size of Φ 15mm * 25mm
3+Content is the Yb:Sr of 5.0at.%
3Y
2(BO
3)
4Crystal.
Claims (4)
1 one kinds of Fs laser crystal of ytterbium doped strontium yttrium borate is characterized in that: this crystalline molecular formula is Yb:Sr
3Y
2(BO
3)
4, belonging to rhombic system, spacer is Pnma, unit cell parameters is:
Z=4, specific refractory power is 1.74, Yb
3+Ion replaces Y in the crystal as dopant ion
3+The ionic crystallographic site, its doping content is between 0.5at-25at%.
The crystalline preparation method of 2 one kinds of claims 1 is characterized in that: this crystal by adopting Czochralski grown, and the crystalline growth temperature is 1325-1370 ℃, and pull rate is 0.7-2mm/h, and the crystal rotating speed is 15-30rmp.
The crystalline purposes of 3 one kinds of claims 1 is characterized in that: this crystal is used for the femto-second solid laser device as working-laser material, uses photoflash lamp or laser diode as pumping source, excites the laser output that produces the 1054nm wavelength.
The crystalline purposes of 4 one kinds of claims 1 is characterized in that: the femto-second solid laser device made from this crystal is used for information science, biomedicine, ultrafast scientific domain.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2004101010558A CN100469950C (en) | 2004-12-03 | 2004-12-03 | Fs laser crystal of ytterbium doped strontium yttrium borate |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2004101010558A CN100469950C (en) | 2004-12-03 | 2004-12-03 | Fs laser crystal of ytterbium doped strontium yttrium borate |
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| Publication Number | Publication Date |
|---|---|
| CN1782144A CN1782144A (en) | 2006-06-07 |
| CN100469950C true CN100469950C (en) | 2009-03-18 |
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Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102965730A (en) * | 2011-09-01 | 2013-03-13 | 中国科学院福建物质结构研究所 | Novel ytterbium-activating-gadolinium calcium borate ultrafast laser crystal |
| CN102337591B (en) * | 2011-11-14 | 2013-09-25 | 西北大学 | Ytterbium-doped potassium triyttrium borate laser crystal, and growing method and application thereof |
| CN110747509A (en) * | 2019-11-28 | 2020-02-04 | 中国工程物理研究院化工材料研究所 | Ytterbium-doped strontium-gadolinium-yttrium borate mixed crystal laser crystal and preparation method and application thereof |
| CN110863244A (en) * | 2019-11-28 | 2020-03-06 | 中国工程物理研究院化工材料研究所 | Ytterbium-doped strontium borate lanthanum yttrium mixed crystal laser crystal and preparation method and application thereof |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1143124A (en) * | 1995-08-15 | 1997-02-19 | 中国科学院物理研究所 | Ytterbium mixed yttrium vanadate laser crystal and its preparing method |
| CN1250115A (en) * | 1998-10-05 | 2000-04-12 | 中国科学院福建物质结构研究所 | Self-frequency doubling laser crystal of Nd-doped low temperature phase lanthanum-scandium borate |
| CN1422994A (en) * | 2001-11-23 | 2003-06-11 | 中国科学院福建物质结构研究所 | Chromium-doped lanthanum scandium borate tunable laser crystal |
-
2004
- 2004-12-03 CN CNB2004101010558A patent/CN100469950C/en not_active Expired - Fee Related
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1143124A (en) * | 1995-08-15 | 1997-02-19 | 中国科学院物理研究所 | Ytterbium mixed yttrium vanadate laser crystal and its preparing method |
| CN1250115A (en) * | 1998-10-05 | 2000-04-12 | 中国科学院福建物质结构研究所 | Self-frequency doubling laser crystal of Nd-doped low temperature phase lanthanum-scandium borate |
| CN1422994A (en) * | 2001-11-23 | 2003-06-11 | 中国科学院福建物质结构研究所 | Chromium-doped lanthanum scandium borate tunable laser crystal |
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| CN1782144A (en) | 2006-06-07 |
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