CN100468705C - Active element array base-board and mfg. method - Google Patents

Active element array base-board and mfg. method Download PDF

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Publication number
CN100468705C
CN100468705C CNB2006100802120A CN200610080212A CN100468705C CN 100468705 C CN100468705 C CN 100468705C CN B2006100802120 A CNB2006100802120 A CN B2006100802120A CN 200610080212 A CN200610080212 A CN 200610080212A CN 100468705 C CN100468705 C CN 100468705C
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organic material
array base
material layer
base board
component array
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CN1851905A (en
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周振南
张丰隆
郑婷文
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AU Optronics Corp
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AU Optronics Corp
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Abstract

This invention puts forward an active element array base plate and its manufacturing method, which provides a base plate with several scan wirings, data wirings and active elements on it, in which, the active elements are connected with the corresponding scan wirings and data wirings, then forms an organic material layer on it covering the wirings and the active elements, then, processes the surface of the organic material layer to form several hollow patterns smaller than 1mum and several pixel electrodes on it connected with the corresponding active elements electrically.

Description

Active component array base board and manufacture method thereof
Technical field
The present invention is relevant for a kind of active component array base board and manufacture method, particularly relevant for a kind of thin-film transistor array base-plate and manufacture method.
Background technology
The design of display is for the visual experience to people's the most comfortable, and the defective that therefore human vision can be experienced is the important topic of industry always.With the liquid crystal flat panel display is example, and the making of LCD relates to complicated technologies such as backlight module, liquid crystal layer and two sheet glass substrates at least.If nibs appears in certain one technology, the panel image quality can be subjected to negative effect, and also visible defects can occur last when lighting test (light-on test).Visible defects comprises demonstration inhomogeneous (mura) or the like.
The allocating process of follow-up alignment film in addition, on the thin-film transistor array base-plate of LCD, forms the height offset that one deck organic material layer comes each element of planarization to be caused, so that can carry out smoothly to reduce the incidence of orientation defective through regular meeting.Yet the arrangement of liquid crystal molecule and panel display quality are closely bound up in the orientation engineering, the surface of general organic material layer is very smooth and smooth surface, therefore in case LCD alignment technology has a littlely when uneven (mura), will make the display quality of display panels integral body be affected.
It is to utilize photoetching process to form the concavity figure on the surface of organic material layer that a kind of mode is arranged at present, so that the inhomogeneous situation of demonstration that causes because of defective workmanship can thereby reduce or slows down.Owing to when organic material laminar surface formation concavity pattern can provide Liquid Crystal Molecules Alignment, different tilt angles is arranged, therefore can slow down or reduce the uneven phenomenon of demonstration.But the above-mentioned mode that forms the concavity pattern with photoetching process is to use halftoning (half-tone) mask to come that organic material layer is carried out exposure imaging technology to reach.The cost of this kind mode is quite high.And, under existing exposure machine resolution, adopt the size of the formed concavity pattern of halftoning (half-tone) photoetching process also to only limit to micron grade, be difficult to produce littler recess patterns.And because the liquid crystal molecule size is a nano-scale, therefore if can produce the recess patterns of nano-scale at the organic material laminar surface, can be more remarkable so that slow down or reduce the effect that shows uneven phenomenon.
Summary of the invention
The purpose of this invention is to provide a kind of active component array base board, show uneven problem to slow down or to reduce display.
Another object of the present invention provides a kind of manufacture method of active component array base board, and this manufacture method adopts the mode of lower cost to make the recess patterns of nano-scale, to slow down the demonstration non-uniform phenomenon of LCD.
For reaching above-mentioned or other purpose, the present invention proposes a kind of manufacture method of active component array base board.The method is that a substrate is provided earlier, then, forms several scan wirings, several data distributions and several active members on substrate.Wherein each active member and corresponding scan wiring and data distribution electrically connect.Then, on substrate, form one deck organic material layer, cover these scan wirings, these data distributions and these active members.Then, plasma-treating technology is carried out on the surface of this organic material layer, to form several recess patterns in this organic material laminar surface, wherein the depth dimensions of each recess patterns is less than 1 micron.Afterwards, on this organic material layer, form several pixel electrodes.Wherein each pixel electrode can electrically connect with one of them corresponding active member.
In one embodiment of this invention, the method for formation organic material layer is to prepare a kind of organic material solution earlier.Afterwards, this organic material solution is coated on the substrate.Then, carry out baking procedure, so that this organic material solution is solidified to form above-mentioned organic material layer.Wherein organic material solution comprises an insulating material, one first solvent and one second solvent.The boiling point of first solvent is higher than the boiling point of second solvent.On the other hand, first solvent and second solvent for example are to be selected from diethylene glycol (DEG) methyl ethyl ether (diethylene glycol methyl ethyl ether respectively, EDM), propylene glycol monomethyl ether (propylene glycol monomethyl ether acetate, PGMEA), propylene glycol monomethyl ether (propylene glycol methyl ether, PGME) and the group that formed of diethylene glycol monoethyl ether acetic acid esters (diethylene glycol monoethyl ether acetate).
In one embodiment of this invention, when carrying out baking procedure, the surface of above-mentioned organic material solution maintains 50~160 degree Celsius.
In one embodiment of this invention, before carrying out baking procedure, more comprise and carry out vacuum drying process.
In one embodiment of this invention, after forming above-mentioned organic material layer, more be included in and form several contact windows (contact opening) in this organic material layer.Each contact window exposes one of them active member, and each pixel electrode is to electrically connect with corresponding active member by this contact window.In addition, before forming this organic material layer, more comprise forming one deck passivation layer, cover these scan wirings, these data distributions and these active members.Wherein these contact windows expose this passivation layer.And after forming this organic material layer, more comprise removing this passivation layer that is exposed by these contact windows, to expose these active members.In addition, remove the step of the passivation layer that is exposed out and plasma-treating technology is carried out on the surface of above-mentioned organic material layer carry out simultaneously.
In one embodiment of this invention, the reacting gas of above-mentioned plasma-treating technology for example is halogen-containing gas, oxygen, nitrogen, inert gas or its mist.In addition, this inert gas for example is an argon gas.
In one embodiment of this invention, the pressure of above-mentioned plasma-treating technology is not more than an atmospheric pressure.
In one embodiment of this invention, these active members are thin-film transistor.
In one embodiment of this invention, the depth dimensions of above-mentioned lip-deep each recess patterns of organic material layer is between 0.1~1 micron.
The present invention reintroduces a kind of active component array base board, comprises plurality of scanning wirings, many data distributions, a plurality of active member, one deck organic material layer and a plurality of pixel electrodes.These scan wirings, these data distributions and these active members are to be configured on the substrate.Wherein each active member and corresponding scan wiring and data distribution electrically connect.Above-mentioned organic material layer covers these active members, these scan wirings and these data distributions.Wherein the surface of this organic material layer has several recess patterns, and the depth dimensions of each recess patterns is less than 1 micron.In addition, these pixel electrodes are positioned on this organic material layer, and each pixel electrode can electrically connect with one of them corresponding active member.
In one embodiment of this invention, the depth dimensions of each recess patterns is between 0.1~1 micron.
In one embodiment of this invention, said active element array substrate more comprises one deck passivation layer, its be disposed at above-mentioned organic material layer under.
Effect of the present invention is significant: the present invention utilizes special formulation to form organic material layer, and carry out plasma-treating technology in the surface of organic layer, with the formation recess patterns, and liquid crystal molecule is arranged with different tilt angles, shown non-uniform phenomenon thereby relax.Moreover compared to similar prior art, the method that the present invention makes recess patterns has advantage cheaply, and can make with liquid crystal molecule and be all nano level recess patterns.
Description of drawings
Figure 1A, 1B are the manufacturing process schematic top plan view of the active component array base board of one embodiment of the invention.
Fig. 2 A~2D is the manufacturing process generalized section of the active component array base board of one embodiment of the invention, and it is the profile along the hatching I-I ' of Figure 1A and Figure 1B.
Fig. 3 A~3D is the manufacturing process profile of the active component array base board of second embodiment of the invention.
The main element symbol description
108: passivation layer
110,300: organic material layer
116,306: pixel electrode
112,302: contact window
100: substrate
102: scan wiring
104: the data distribution
106: active member
106a: gate electrode
106b: gate insulation layer
106c: channel layer
106d: source electrode
106e: drain electrode
114,304: plasma-treating technology
115,305: recess patterns
I-I ': hatching
Embodiment
For above and other objects of the present invention, feature and advantage can be become apparent, preferred embodiment cited below particularly, and cooperate appended graphicly, be described in detail below.
First embodiment
Figure 1A to Figure 1B is the manufacturing process schematic top plan view according to the active component array base board of a preferred embodiment of the present invention.Fig. 2 A to Fig. 2 D is the manufacturing process generalized section according to the active component array base board of a preferred embodiment of the present invention, and it is along the profile of I-I ' among Figure 1A to Figure 1B.
At first, please be simultaneously with reference to Figure 1A and Fig. 2 A, the manufacture method of active component array base board of the present invention is that a substrate 100 is provided earlier.Then, on substrate 100, form several scan wirings 102, several data distributions 104 and several active members 106.Wherein each active member 106 and corresponding scan wiring 102 and data distribution 104 electrically connect.Active member 106 for example is a thin-film transistor, and it comprises gate electrode 106a, gate insulation layer 106b, channel layer 106c, source electrode 106d and drain electrode 106e.Gate electrode 106a is arranged on the substrate 100.Gate insulation layer 106b covering grid electrode 106a and substrate 100.Channel layer 106c is arranged on the gate insulation layer 106b, and is positioned at gate electrode 106a top.Source electrode 106d and drain electrode 106e are arranged at the both sides of the channel layer 106c of gate electrode 106a top.And active member 106 and scan wiring 102 can be made of known any process with the manufacture method of data distribution 104.
Then, please refer to Fig. 2 B, on substrate 100, form the passivation layer 108 of one deck, cover scan wiring 102, data distribution 104, active member 106 and substrate 100.The material of passivation layer 108 for example is a silicon nitride, and the formation method of passivation layer 108 for example is the plasma enhanced chemical vapor deposition method.Then, on substrate 100, form one deck organic material layer 110, cover these scan wirings 102, data distribution 104 and active member 106.The formation method of organic material layer 110 is described as follows with an example, but the present invention does not limit this formation method of use.
At first prepare a kind of organic material solution, this organic material solution is made of an insulating material, one first solvent and one second solvent.This insulating material for example is organic materials such as acrylic resin, photosensitive material and interfacial agent.The solvent aspect, the boiling point of first solvent is higher than the boiling point of second solvent.First solvent and second solvent for example are to be selected from diethylene glycol (DEG) methyl ethyl ether (diethyleneglycol methyl ethyl ether respectively, EDM), propylene glycol monomethyl ether (propyleneglycol monomethyl ether acetate, PGMEA), propylene glycol monomethyl ether (propyleneglycol methyl ether, PGME) and the group that formed of diethylene glycol monoethyl ether acetic acid esters (diethylene glycolmonoethyl ether acetate).With EDM and diethylene glycol monoethyl ether acetic acid esters is example, because the boiling point of EDM is 176 degree Celsius, and the boiling point of diethylene glycol monoethyl ether acetic acid esters is 217 degree Celsius, therefore be that first solvent, EDM are second solvent with the diethylene glycol monoethyl ether acetic acid esters, and the content of diethylene glycol monoethyl ether acetic acid esters can not surpass 50% in above-mentioned organic material solution.Afterwards, organic material solution is coated on the substrate 100.
Then, carry out vacuumize (vacuum dry) technology, with most first solvent and second removal of solvents.What deserves to be mentioned is that vacuum drying process can omit, and directly carries out next step.Continue it, carry out the baking procedure first time, make this organic material solution remove solvent and form organic material layer 110.Wherein when carrying out baking procedure, the surface of this organic material solution for example is to maintain 50~160 degree Celsius, makes the top layer of organic material layer 110 softer than bottom.Organic material layer 110 is formed through above step.Continue it, utilize photoetching process such as exposure imaging in organic material layer 110, to form contact window 112, expose passivation layer 108.Then, carrying out baking for the second time again solidifies the organic material layer after contact window 112 forms.Then, please refer to Fig. 2 C, plasma-treating technology 114 is carried out on the surface of organic material layer 110, to form comprehensive recess patterns 115 in organic material layer 110 surfaces.The depth dimensions of these recess patterns 115 is less than 1 micron.In a preferred embodiment, the depth dimensions of these recess patterns 115 is between 0.1~1 micron.And when follow-up with the active component array base board that completes and the synthetic display panels of another substrate in batch after, these recess patterns 115 can make the light that passes through carry out irregular scattering and refraction, and can so that liquid crystal molecule arrange with different tilt angles.Thus, when display panels when showing, if defectiveness on the active component array base board and the demonstration that produces is inhomogeneous or the orientation engineering on the inequality that produced, can become more not obvious because of the anisotropic design of these recess patterns 115, thereby can relax the situation of the demonstration inhomogeneous (mura) of LCD.What deserves to be mentioned is that plasma-treating technology 114 also can remove the passivation layer 108 of contact window 112 bottoms simultaneously, and expose the source electrode 106d of active member 106.In another embodiment, also can utilize organic material layer 110 to be mask, additionally carry out an etch process and remove the passivation layer 108 of contact window 112 bottoms, in other words, the passivation layer 108 that removes contact window 112 bottoms can be finished simultaneously with plasma-treating technology 114, also can finish in different step.If in same step, do not finish, then remove the passivation layer 108 of contact window 112 bottoms and the precedence of plasma-treating technology 114 and also do not limit.
On the other hand, the reacting gas of plasma-treating technology 114 for example is the mist of halogen-containing gas, oxygen, nitrogen, inert gas or these gases.Wherein inert gas for example is an argon gas.In addition, the pressure of plasma-treating technology 114 for example is an atmospheric pressure or below the atmospheric pressure.
Continue it, please continue D, on organic material layer 110, form pixel electrode 116 with reference to Fig. 2.Pixel electrode 116 can be by the source electrode 106d electric connection of contact window 112 with corresponding active member 106.The material of pixel electrode 116 for example is an indium tin oxide.Through above-mentioned steps, active component array base board of the present invention forms, and its schematic top plan view is shown in Figure 1B.
Second embodiment
In first embodiment, be formed with passivation layer under the organic material layer of active component array base board, but the present invention do not limit and must form passivation layer, the present invention also can be after forming active member, data distribution and scanning distribution, directly form organic material layer, it is described in detail as follows:
Fig. 3 A~Fig. 3 D is the manufacturing process profile of the active component array base board of second embodiment of the invention.Please refer to Fig. 3 A, the manufacture method of active component array base board provided by the present invention is that substrate 100 is provided earlier.Then, form scan wiring 102, data distribution 104 and active member 106 in substrate 100.Wherein each active member 106 and corresponding scan wiring 102 and data distribution 104 electrically connect.
Then, please refer to Fig. 3 B, on substrate 100, form one deck organic material layer 300, cover above-mentioned scan wiring 102, data distribution 104 and active member 106.The material of organic material layer 300 and formation method for example with first embodiment in the material and the formation method of organic material layer 110 identical, so repeat no more in this.Continue it, in organic material layer 300, form contact window 302, and expose the source electrode 106d of active member 106.
Then, please refer to Fig. 3 C, plasma-treating technology 304 is carried out on the surface of organic material layer 300, to form recess patterns 305 in organic material layer 300 surfaces.Every process conditions of plasma-treating technology 304 for example are identical with the plasma-treating technology 114 described in first embodiment, so will not repeat in this.The depth dimensions of these recess patterns 305 is less than 1 micron.In a preferred embodiment, the depth dimensions of these recess patterns 305 is between 0.1~1 micron.Recess patterns 305 can make the light that passes through carry out irregular scattering and refraction, and liquid crystal molecule is arranged with different tilt angles, thereby mitigation or reduction active component array base board cause assembling the LCD of finishing because of the defective of technology the uneven problem of demonstration is arranged.
Continue it, please continue D, on organic material layer 300, form pixel electrode 306 with reference to Fig. 3.Pixel electrode 306 can be by contact window 302 and corresponding active member 106 electric connections.
The present invention utilizes special formulation to make above-mentioned organic material layer, then this organic material layer is carried out plasma-treating technology, and forms recess patterns in the surface of organic material layer.Therefore these recess patterns can make liquid crystal molecule arrange with different tilt angles, can relax or reduce active component array base board because of demonstration non-uniform phenomenon that defective workmanship caused.In addition, finish, also have the advantage of simplification processing step if the etch process of plasma-treating technology and passivation layer is incorporated in the same processing step.
Below explanation utilizes the structure of the above-mentioned formed active component array base board of method.Figure 1B is the schematic top plan view of the active component array base board of one embodiment of the invention.Fig. 2 D is the profile along the hatching I-I ' of Figure 1B.Please be simultaneously with reference to Figure 1B and Fig. 2 D, active component array base board of the present invention comprises substrate 100, passivation layer 108, organic material layer 110 and several pixel electrodes 116.Dispose several scan wirings 102, several data distributions 104 and several active members 106 on the substrate 100.Wherein each active member 106 and corresponding scan wiring 102 and data distribution 104 electrically connect.Passivation layer 108 covers these active members 106, scan wiring 102 and data distribution 104, and organic material layer 110 covers passivation layer 108.
The surface of organic material layer 110 has a plurality of recess patterns 115, and the depth dimensions of each recess patterns 115 is less than 1 micron.In a preferred embodiment, the depth dimensions of each recess patterns 115 is between 0.1~1 micron.Recess patterns 115 can make the light that passes through carry out irregular scattering and refraction, thereby avoids active component array base board because the defective of technology and cause assembling the LCD of finishing uneven problem takes place to show.In addition, the material of organic material layer 110 for example is an organic material, comprises acrylic resin, photosensitive material and interfacial agent, also can be other material.
Pixel electrode 116 is positioned on the organic material layer 110, and each pixel electrode 116 can electrically connect with one of them corresponding active member 106.
In another embodiment, active component array base board of the present invention can omit passivation layer, makes organic material layer cover these active members, scan wiring and data distribution.Shown in Fig. 3 D, be not formed with passivation layer under the organic material layer 300, but directly cover active member 106, scan wiring 102 and data distribution 104.Particularly, the surface of organic material layer 300 has a plurality of recess patterns 305, and the depth dimensions of each recess patterns 305 is less than 1 micron.In a preferred embodiment, the depth dimensions of each recess patterns 305 is between 0.1~1 micron.
Because the organic material laminar surface on the active component array base board of the present invention has depth dimensions less than 1 micron recess patterns, therefore recess patterns can make liquid crystal molecule arrange with different tilt angles, can relax or reduce active component array base board because of demonstration non-uniform phenomenon that defective workmanship caused.
Though the present invention discloses as above with preferred embodiment; yet it is not in order to limiting the present invention, anyly has the knack of this skill person, without departing from the spirit and scope of the present invention; when can doing a little change and retouching, so protection scope of the present invention is as the criterion when looking the scope that claims define.

Claims (17)

1. the manufacture method of an active component array base board is characterized in that, comprising:
One substrate is provided;
Form plurality of scanning wirings, many data distributions and a plurality of active member on this substrate, wherein each active member and corresponding this scan wiring and the electric connection of this data distribution;
On this substrate, form an organic material layer, cover these scan wirings, these data distributions and these active members;
A plasma treatment process is carried out on the surface of this organic material layer, and to form a plurality of recess patterns in this organic material laminar surface, wherein the depth dimensions of each recess patterns is less than 1 micron; And
Form a plurality of pixel electrodes on this organic material layer, wherein each pixel electrode can electrically connect with a corresponding wherein active member.
2. the manufacture method of active component array base board as claimed in claim 1 is characterized in that, the method that forms this organic material layer comprises:
Prepare an organic material solution;
This organic material solution is coated on this substrate; And
Carry out a baking procedure, so that this organic material solution is solidified to form this organic material layer.
3. the manufacture method of active component array base board as claimed in claim 2 is characterized in that, this organic material solution comprises an insulating material, one first solvent and one second solvent, and wherein the boiling point of this first solvent is higher than the boiling point of this second solvent.
4. the manufacture method of active component array base board as claimed in claim 3, it is characterized in that this first solvent and this second solvent are selected from the group that diethylene glycol (DEG) methyl ethyl ether, propylene glycol monomethyl ether, propylene glycol monomethyl ether and diethylene glycol monoethyl ether acetic acid esters are formed respectively.
5. the manufacture method of active component array base board as claimed in claim 2 is characterized in that, the surface of this organic material solution maintains 50~160 degree Celsius.
6. the manufacture method of active component array base board as claimed in claim 2 is characterized in that, before carrying out baking procedure, more comprises and carries out vacuum drying process.
7. the manufacture method of active component array base board as claimed in claim 1 is characterized in that, after forming this organic material layer, more comprises:
Form a plurality of contact windows in this organic material layer, each contact window exposes a wherein active member, and each pixel electrode electrically connects with corresponding active member by this contact window.
8. the manufacture method of active component array base board as claimed in claim 7, it is characterized in that, before forming this organic material layer, more comprise: form a passivation layer, cover these scan wirings, these data distributions and these active members, wherein these contact windows expose this passivation layer; And
After forming this organic material layer, more comprise removing this passivation layer that is exposed by these contact windows, to expose these active members.
9. the manufacture method of active component array base board as claimed in claim 8 is characterized in that, removes the step of this passivation layer that is exposed out and this plasma treatment process is carried out on the surface of this organic material layer carry out simultaneously.
10. the manufacture method of active component array base board as claimed in claim 1 is characterized in that, the reacting gas of this plasma treatment process comprises halogen-containing gas, oxygen, nitrogen, inert gas or its mist.
11. the manufacture method of active component array base board as claimed in claim 10 is characterized in that, this inert gas comprises argon gas.
12. the manufacture method of active component array base board as claimed in claim 1 is characterized in that, the pressure of this plasma treatment process is not more than an atmospheric pressure.
13. the manufacture method of active component array base board as claimed in claim 1 is characterized in that, these active members are thin-film transistor.
14. the manufacture method of active component array base board as claimed in claim 1 is characterized in that, the depth dimensions of lip-deep each recess patterns of this organic material layer is between 0.1~1 micron.
15. an active component array base board is characterized in that, comprising:
Plurality of scanning wirings, many data distributions and a plurality of active member are configured on the substrate, wherein each active member and corresponding this scan wiring and the electric connection of this data distribution;
One organic material layer covers these active members, these scan wirings and these data distributions, and wherein the surface of this organic material layer has a plurality of recess patterns, and the depth dimensions of each recess patterns is less than 1 micron; And
A plurality of pixel electrodes are positioned on this organic material layer, and each pixel electrode can electrically connect with a corresponding wherein active member.
16. active component array base board as claimed in claim 15 is characterized in that, the depth dimensions of each recess patterns is between 0.1~1 micron.
17. active component array base board as claimed in claim 15 is characterized in that, more comprises a passivation layer, be disposed at this organic material layer under.
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