CN100466179C - Method for transversely period doping of semiconductor material and equipment thereof - Google Patents
Method for transversely period doping of semiconductor material and equipment thereof Download PDFInfo
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- CN100466179C CN100466179C CNB2003101214902A CN200310121490A CN100466179C CN 100466179 C CN100466179 C CN 100466179C CN B2003101214902 A CNB2003101214902 A CN B2003101214902A CN 200310121490 A CN200310121490 A CN 200310121490A CN 100466179 C CN100466179 C CN 100466179C
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Abstract
This invention refers to a method for realizing the cycle doping for semiconductor material and the device thereof which consists of vacuum chamber, atom source, collimation hole and reflection mirror etc. The process contains codepositing identity material and doped material in semiconductor material growth period, the laser stationary field only acting to doped material forming cycle density distribution in transverse direction, so to obtain semiconductor material cycle doping. Said invention has short doping period (only half of optical wavelength), high efficiency and can be widely used in novel solid state electronic and photoelectronic device, and semiconductor physics theory research etc.
Description
Affiliated technology neck city
The present invention relates to a kind of apparatus and method that realize that the horizontal cycle of semi-conducting material mixes up, in the growth course of semi-conducting material, mixed up the atoms in space density distribution and mix up performance period by the laser gradient field modulation.
Background technology
In recent years, semiconductor low dimensional structures system (as quantum well and superlattice, quantum wire, quantum dot etc.) is Semiconductor Physics theoretical research and semiconductor device exploitation and use the most active field, vital role during the technology of mixing up is played the part of in the preparation process of novel semiconductor material.Adopt advanced epitaxial growth of semiconductor material growth technique (as molecular beam epitaxial growth technology), with thickness only is that semiconductive luminescent materials (as the quantum well) alternating growth of tens atomic layers is between light limiting material (as quantum potential barrier), make it produce quantum limitation effect, can make laser under lower current drives, just produce stronger laser, and reduce the influence of temperature device performance.The technology that present semi-conducting material mixes up mainly contains thermal diffusion, ion injection, mocvd (MOCVD) and molecular beam epitaxy (MBE) etc., but these technology can't realize that the horizontal cycle is mixing up of sub-micrometer scale.Though as MBE can strict control epitaxial loayer bed thickness component and doping concentration, powerless aspect mixing up in horizontal cycle.
The atom nanofabrication technique is the new application of atom optics in the Micrometer-Nanometer Processing Technology field, but have the resolving power height, be not subjected to charge affects collateral elaboration figure, efficient advantages of higher, developed rapidly over past ten years, successfully produced dot matrix and linear array structure that characteristic size is a nanometer scale experimentally.Use up and handle III atom (as Ga, In etc.) and realize that nanometer scale is focused to and realize that the good instrument that provides is provided the horizontal cycle of semi-conducting material.
Summary of the invention
The technical issues that need to address of the present invention are: the deficiency that overcomes above-mentioned technology, the atom nanofabrication technique is applied in the semiconductor material growing process, a kind of method and producing device thereof of realizing that the horizontal cycle of semi-conducting material mixes up is provided, handle mixing up of atoms at suitable temperatures semi-conducting material by light, reach the purpose that changes material structure and component, thereby realize mixing up of horizontal cycle sub-micrometer scale.
Technical solution of the present invention is: the horizontal cycle adulterating method of a kind of semi-conducting material, it is characterized in that: the atomic beam that at first will need to mix tentatively collimates, then carry out height collimation, the focusing of realization nanometer scale and being deposited in the substrate in the laser standing wave field vertical that incident light and reverberation form then with the atomic beam direction of propagation by the linear polarization gradient fields; Simultaneously bulk material atomic beam uniform deposition is in substrate, is doped near the potential energy minimum point that atom focuses on laser standing wave field, thereby realizes the doping of material.
The horizontal cycle of semi-conducting material of realization said method is mixed up device, it is characterized in that: comprise vacuum chamber, be doped atomic source, collimating aperture, the mutually perpendicular linearly polarized light of direction of vibration, the bulk material source, plane mirror, the incident light and the reverberation of substrate and formation laser standing wave field, by being doped the atomic beam that is doped that atomic source sends, at first tentatively collimate by collimating aperture, then enter opposite by the direction of propagation, the linear polarization gradient fields that the mutually perpendicular linearly polarized light of direction of vibration forms is carried out height collimation, the focusing of realization nanometer scale and being deposited in the substrate in the laser standing wave field vertical with the atomic beam direction of propagation that incident light and the reverberation that returns through the plane mirror vertical reflection form then; The bulk material atomic beam is sent by the bulk material source simultaneously, because laser standing wave field does not act on it, uniform deposition is in substrate; Deposit two kinds of materials simultaneously, laser standing wave field is only to being worked by being mixed up atom, and is inoperative to bulk material, mixes up and evenly mixes up by the horizontal cycle of realizing semi-conducting material of opening and close of laser.Mixing up in the process that the cycle of semi-conducting material mixes up and evenly mix up can opening and closing and realize by laser.
Principle of the present invention is: because laser standing wave field is inoperative to the bulk material atom, the bulk material uniform deposition is in substrate, mixed up atomic beam by after the atomic source ejection, at first tentatively collimate, then enter the linear polarization gradient fields and laterally cool off the atomic beam that becomes highly collimation by collimating aperture.Mixed up atom and when passing the Near resonance oscillating laser standing wave field, can be assembled, during optical frequency blue shift (or red shift) node (or antinode) of standing wave corresponding the minimum point of optical potential, focusing of atomic beam is located in the node (or antinode) of stationary field, thereby the doping concentration maximum that should locate.Because the cycle of stationary field is 1/2 of an optical wavelength just, so doping concentration has strict periodicity in material.When unglazed field action, mixed up atom and in semi-conducting material, evenly distributed, thereby can realize evenly mixing up.In addition, light field is only worked to mixing up atom, utilize having an effect certainly of light and atomic interaction generation that atomic beam is carried out transversal collimation, utilization is mixed up atom suffered dipolar forces in laser standing wave field makes it change movement locus, make and mixed up atomic density and present horizontal period profile, thereby realize the periodically-varied of doping concentration in semi-conducting material.
The present invention has following advantage than prior art:
(1) laser field that adopts of the present invention is only worked to mixing up atom, and is inoperative to bulk material, adds that light field can realize that the horizontal cycle mixes up, removing light field can realize evenly mixing up, thereby easy and simple to handle, the efficient height can be made very big quantum wire of number or quantum dot simultaneously.
(2) it is little laterally to mix up the cycle, and its size equals the cycle (only for optical wavelength half) of laser standing wave field.
(3) with the present invention can the produce once quantum wire or the quantum dot of considerable number, improved the efficient of making semiconductor device.Be of a size of 100um as light beam, with two mutually perpendicular laser standing wave fields to being mixed up about 500,000 of the dot matrix that the atom effect can produce once.
(4) can be used for the research and development of the making of high density quantum wire array or dot matrix, photonic crystal making, nano material and semiconductor Quantum Device etc.Make as the AIGaAs quantum-well laser, it is poor to produce being with of 0.25eV when the change in concentration 30% of Ga, under lower current drives, just can work, and the quantum dot of big figure can remedy the too weak shortcoming of single quantum dot light emitting intensity, and the quantum-well laser of Zhi Zuoing has advantages such as ultralow threshold value, non-thermo-responsive, high strength in this way; Can be widely used in aspects such as novel solid-state electronic, opto-electronic device and Semiconductor Physics theoretical research in addition.
Description of drawings
Fig. 1 is a structural representation of the present invention;
Fig. 2 is the process of the mixing up schematic diagram of semi-conducting material of the present invention.
Embodiment
As shown in Figure 1, the device that the horizontal cycle of semi-conducting material of the present invention mixes up comprises vacuum chamber 1, is doped atomic source 2, collimating aperture 4, the mutually perpendicular linearly polarized light 5 of direction of vibration, bulk material source 6, plane mirror 8, substrate 9 and form the incident light 11 and the reverberation 10 of laser standing wave field.
As shown in Figure 1 and Figure 2, the horizontal cycle adulterating method of semi-conducting material is among the present invention: be doped atomic beam 3 and send by being doped atomic source 2, because beam divergence angle is very big, at first tentatively collimate by collimating aperture 4, then enter x wire polarization gradient fields opposite by the direction of propagation, that the mutually perpendicular linearly polarized light 5 of direction of vibration forms and carry out height collimation, the focusing of realization nanometer scale and being deposited in the substrate in the laser standing wave field (vertical) that incident light 11 and the reverberation 10 that returns through plane mirror 8 vertical reflections form then with the direction of propagation of atomic beam; Simultaneously bulk material atomic beam 7 is sent by bulk material source 6, because laser standing wave field is to its not effect, uniform deposition is in substrate 9.Be doped near the potential energy minimum point that atom focuses on laser standing wave field, it is the highest that the quilt at potential energy minimum point place mixes up atomic concentration, thereby realize the doping of material.Laser standing wave field laterally has strict periodicity, so semi-conducting material mixes up and laterally has strict periodicity.When not needing the cycle to mix up, turn off laser and just can realize evenly mixing up of material.
The laser that is used to handle atom is produced by crystal double frequency, is respectively 294.4nm and 325.7nm as the optical maser wavelength of handling Ga atom and In atom, can use ammonium arsenate (ADA) crystal and LilO respectively
3The frequency multiplication dye laser produces.
Claims (2)
1, the horizontal cycle adulterating method of a kind of semi-conducting material, it is characterized in that: the atomic beam that at first will need to mix tentatively collimates, x wire polarization gradient fields then opposite by the direction of propagation, that the mutually perpendicular linearly polarized light of direction of vibration forms is carried out height collimation, the focusing of realization nanometer scale and being deposited in the substrate in the laser standing wave field vertical with the atomic beam direction of propagation that incident light and reverberation form then; Simultaneously bulk material atomic beam uniform deposition is in substrate, is doped near the potential energy minimum point that atom focuses on laser standing wave field, and it is the highest that the quilt at potential energy minimum point place mixes up atomic concentration, thereby realizes the doping of material; When not needing the cycle to mix up, turn off laser and just can realize evenly mixing up of material.
2, the horizontal cycle of semi-conducting material of the described method of realization claim 1 is mixed up device, it is characterized in that: comprise vacuum chamber (1), be doped atomic source (2), collimating aperture (4), the mutually perpendicular linearly polarized light of direction of vibration (5), bulk material source (6), plane mirror (8), the incident light (11) and the reverberation (10) of substrate (9) and formation laser standing wave field, be doped atomic beam (3) by what be doped that atomic source (2) sends, at first tentatively collimate by collimating aperture (4), then enter opposite by the direction of propagation, the linear polarization gradient fields that the mutually perpendicular linearly polarized light of direction of vibration (5) forms is carried out height collimation, the focusing of realization nanometer scale and being deposited in the substrate in the laser standing wave field vertical with the atomic beam direction of propagation that incident light (11) and the reverberation (10) that returns through plane mirror (8) vertical reflection form then; Bulk material atomic beam (7) is sent by bulk material source (6) simultaneously, because laser standing wave field does not act on it, uniform deposition is in substrate (9); When not needing the cycle to mix up, turn off laser and just can realize evenly mixing up of material.
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| Application Number | Priority Date | Filing Date | Title |
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| CNB2003101214902A CN100466179C (en) | 2003-12-19 | 2003-12-19 | Method for transversely period doping of semiconductor material and equipment thereof |
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| CNB2003101214902A CN100466179C (en) | 2003-12-19 | 2003-12-19 | Method for transversely period doping of semiconductor material and equipment thereof |
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| CN100466179C true CN100466179C (en) | 2009-03-04 |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN101303412B (en) * | 2008-07-04 | 2011-09-14 | 同济大学 | Pre-collimation hole series structure and method for monitoring atom beam cooling effect |
| CN102147536A (en) * | 2011-03-11 | 2011-08-10 | 中国科学院上海光学精密机械研究所 | Two-way controllable one-dimensional optical lattice device |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1099188A (en) * | 1993-04-01 | 1995-02-22 | 松下电器产业株式会社 | Exciting atomic beam source |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1099188A (en) * | 1993-04-01 | 1995-02-22 | 松下电器产业株式会社 | Exciting atomic beam source |
Non-Patent Citations (2)
| Title |
|---|
| 操纵原子束的激光系统研究. 陈元培，陈旭南，罗先刚，李展.微细加工技术，第2期. 2002 * |
| 用光梯度场控制原子制作纳米点阵研究. 陈献忠，姚汉民，陈旭南，石建平.光电子 激光，第13卷第10期. 2002 * |
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