CN100461557C - Te, cadmium and Hg optical range limiter with the continuously adjusting output light intensity of the passive saturated clamp - Google Patents
Te, cadmium and Hg optical range limiter with the continuously adjusting output light intensity of the passive saturated clamp Download PDFInfo
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- CN100461557C CN100461557C CNB2006101480675A CN200610148067A CN100461557C CN 100461557 C CN100461557 C CN 100461557C CN B2006101480675 A CNB2006101480675 A CN B2006101480675A CN 200610148067 A CN200610148067 A CN 200610148067A CN 100461557 C CN100461557 C CN 100461557C
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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Abstract
This invention discloses one passive saturation clamp output light intensity continuous adjusting mercury-cadmium-tellurium limit range device, which comprises one pair of Brag reflection lens formed F-P optical resonance chamber and the Hectic photoelectric diode in middle of F-P optical resonance chamber middle as absorptive layer and the direct current stable power exerted onto diode.
Description
Technical field
The present invention relates to passive semi conductor optical limiter, be meant that specifically the output intensity that can realize high power laser can be in harmonious proportion mercury cadmium telluride (HgCdTe) optical limiter of saturation clamping continuously.
Background technology
Optical limiter spare has under lower incident intensity, and its output intensity is with the linear variation of incident intensity, and its output intensity is clamped at the fixedly characteristics of saturation value under higher incident intensity.Along with the continuous development of high-power tunable pulsed laser device technology, avoid its damage for protecting precision optics and human eye, press for the optical limiter that adapts with it.Simultaneously, optical limiter also is one of the important application optical element in optics fixed ampllitude and optical communication field.Optical limiter has active and branch passive type, and with respect to active optical limiter, the passive type optical limiter just can be realized intensity modulation because of only relating to a branch of incident light, and therefore this amplitude limiter is proved to be a kind of more effective amplitude limit mode.Passive type restriction light intensity tunable optical amplitude limiter not only can satisfy output intensity is limited, and can be by to the artificial adjustment of the two photon absorption of material and output intensity is modulated, has very fast response speed, therefore can be when simplifying apparatus structure, improve the signal to noise ratio of energy utilization ratio and system, for miniaturization, lightweight and the enhance device function of instrument provides effective technological approaches.
Traditional passive type optical limiter has two kinds of structures:
1) based on changing the amplitude limit structure that absorbs volume
Based on the amplitude limit structure that changes the two photon absorption volume is to realize the adjustable most typical amplitude limiter of output intensity, this amplitude limiter structure is a semi-conducting material with big two photon absorption coefficient, incident light normal incidence changes two photon absorption on the amplitude limiter surface by the thickness of regulating absorbed layer.But because two photon absorption is the very low non-linear absorption process of efficient, and it is linear with the interactional length of light absorbing material, therefore if realize that its adjusting to light intensity must have very long absorption length, and, simply realize light intensity regulating and export saturated to be not a kind of effective and feasible scheme by improving two photon absorption length from the practical application angle of device.
2) based on optical resonator and two-photon absorbing material integrated structure
This structure is that two-photon absorbing material is placed in the middle of the optical resonator, by the absorption equivalent length of the light beam vibration in resonant cavity change light beam in two-photon absorbing material, improves the efficient of two photon absorption with this.Wherein, optical resonator is made up of the F-P resonant cavity.Though this method has increased the two photon absorption length of material effectively, its output intensity still remains on fixed value and does not satisfy the continuously adjustable characteristic of its output intensity.
Summary of the invention
Because the problem that exists on the structure, and limited their practical application based on above-mentioned optical limiter.The objective of the invention is to propose a kind of HgCdTe amplitude limiter that can be in harmonious proportion saturation clamping continuously to the output intensity of high power laser.
Technical scheme of the present invention is to place optical resonator middle as absorbed layer on the HgCdTe photodiode, realizes the saturation clamping and the light intensity of incident laser adjustable continuously by the reverse voltage of artificial adjustment HgCdTe photodiode.
HgCdTe optical limiter of the present invention comprises: the F-P optical resonator that a pair of distribution Bragg reflector forms and place in the middle of the F-P optical resonator as the HgCdTe photodiode of absorbed layer and put on the D.C. regulated power supply of HgCdTe photodiode.
Be coated with (HL) m or (LH) m deielectric-coating on the two relative minute surfaces of said a pair of distribution Bragg reflector, wherein H is a high refractive index layer, L is a low-index film, and m is the number of times of high and low refractive index rete alternative stacked, and the optical thickness of high refractive index layer and low-index film is λ
0/ 4.Mirror substrate material is Ge or Si, and high refractive index layer is PbTe or Ge material, and low-index film is ZnSe or SiO material.
The operation principle of HgCdTe optical limiter of the present invention is: be applied to the electric field strength that voltage on the HgCdTe photodiode can change its p-n junction space charge region easily by adjusting.P-n junction itself can form highfield in the space charge region, when p-n junction is applied reverse biased, reverse biased will superpose with the internal electric field of space charge region, when the reverse biased that applies makes this regional electric field strength reach enough strong, can bigger inclination take place band, the effective band gap that is equivalent to material for electronics reduces, be that the Franz-Keldysh effect occurs, this causes the two photon absorption coefficient generation significant change of space charge region, outer bias voltage is strong more will to tilt by band more, effective band gap variation of material is big more, and corresponding two photon absorption changes obvious more.And very weak outside the interface owing to field intensity, can originally not change by tape base, so the two photon absorption coefficient does not change.By regulating the two photon absorption that outer bias voltage just can the artificial adjustment space charge region.Because the HgCdTe photodiode is to be placed in the optical resonator, can guarantee two photon absorption length by the vibration back and forth of light beam in resonant cavity, thereby improve the efficient of two photon absorption, realize accurately adjustable continuously to the saturation clamping output intensity of high power laser within the specific limits.This optical limiter also of the present invention just is than the sharpest edges place of traditional optical amplitude limiter.This type of optical limiter spare can be avoided aspects such as high power laser damage, inhibition output laser noise and have wide application prospect at optical communication, protection human eye and optics.
Description of drawings
Fig. 1 is the structural representation of HgCdTe optical limiter of the present invention.
The absorbed layer p-n junction internal electric field intensity of Fig. 2 HgCdTe optical limiter of the present invention and the graph of a relation of two photon absorption coefficient.
Embodiment
Be design wavelength with incident wavelength 7920nm below, the embodiment to optical limiter of the present invention elaborates in conjunction with the accompanying drawings:
The resonant cavity 1 of HgCdTe optical limiter of the present invention is made up of a pair of distribution Bragg reflector 2, be coated with (HL) m or (LH) m deielectric-coating 3 on the two relative minute surfaces, mirror substrate material is Ge, L is low-index film SiO, H is high refractive index layer PbTe, and its refractive index is respectively 2.35 and 5.55, and m is the number of times of high and low refractive index rete alternative stacked, m=2, rete optical thickness are λ
0/ 4, resonant cavity is long to be 7.92mm.HgCdTe photodiode 4 is placed in the resonant cavity, and makes the space charge region 5 in the p-n junction of photodiode be the resonant cavity center, so that the light amplitude limit reaches best effects.To the 7920nm incident wavelength, this cavity resonator structure transmitted light live width is 2.3nm, and centre wavelength is 7920nm, sees Fig. 1.
HgCdTe photodiode 4 is the key component of amplitude limiter as light absorbing material, and it is a kind of low-gap semiconductor material, and light absorption mainly occurs in infrared band, can obtain closely by regulating the Cd component, in, the light amplitude limit absorption of far infrared band.Corresponding this example, making incident fundamental frequency photon energy is 60% of HgCdTe band gap, then corresponding C d component is 0.305.The preparation method adopts molecular beam epitaxial method to be grown in GaAs to be on the CdTe resilient coating of substrate, to form p type epitaxial loayer, injects the boron ion on its surface, forms n
+Type sudden change n
+-p knot is again at its surface deposition CdTe passivation layer, to reduce surface recombination as far as possible.For satisfying the amplitude limit of highpowerpulse laser beam, n
+The effective area of-p knot should be taken as 2 * 2cm herein greater than laser spot diameter.
The electrode of HgCdTe photodiode is drawn lead and is connected with D.C. regulated power supply 7 through load resistance 6, and load resistance shields to the HgCdTe photodiode, adds constant voltage dc source to n
+-p knot forms the reverse biased mode.Because of n
+-p knot be in anti-partially the time relative load resistance input impedance very big, can think that DC power supply output external voltage all is added in the space charge region, is applied to n by controlling outer bias voltage, can changing
+The electric field strength that-p ties, when electric field strength makes being with of material tilt to a certain degree, the appearance of Franz-Keldysh effect is modulated effective band gap of material, incident photon changes with respect to effective band gap of material, realized the artificial adjustment to the second order absorption coefficient of material, the output intensity of optical limiter is corresponding to change.The F-P resonant cavity makes absorbing material strengthen absorption of incident light efficient.
In the process of design, because optical absorption consumable material n
+The puncture voltage that-p knot can bear is limited, and strong excessively outer bias voltage will cause n
+The puncture of-p knot, big reverse current no longer strengthens the field intensity of space charge region, and therefore excessive reverse biased can't be carried out artificial adjustment to output intensity again.Therefore, according to breakdown field strength, outer bias voltage the most very much not should surpass-1V in this example, and this moment is at n
+The electric field strength at-p knot place is greater than 30kV/cm, and the two photon absorption coefficient has increased by 7 times under the Relative Zero bias condition.So employing the present invention can be so that tuning about 5 times of the amplitude limit ability of optical limiter.
Claims (2)
1. continuously adjustable mercury cadmium telluride optical limiter of passive type saturation clamping output intensity, comprising: the F-P optical resonator (1) by a pair of distribution Bragg reflector (2) forms is characterized in that:
In the middle of the F-P optical resonator, be equipped with HgCdTe photodiode (4),, be applied with D.C. regulated power supply (7) on this HgCdTe photodiode (4) as the absorbed layer of incident laser;
Be coated with (HL) m or (LH) m deielectric-coating on the two relative minute surfaces of said a pair of distribution Bragg reflector, wherein H is a high refractive index layer, L is a low-index film, m is the number of times of high and low refractive index rete alternative stacked, m 〉=2, the optical thickness of low-index film and high refractive index layer is λ
0/ 4, mirror substrate material is Ge or Si, and high refractive index layer is PbTe or Ge material, and low-index film is ZnSe or SiO material.
2. according to the continuously adjustable mercury cadmium telluride optical limiter of a kind of passive type saturation clamping output intensity of claim 1, it is characterized in that: said HgCdTe photodiode (4) is n
+Type sudden change n
+-p p n junction photodiode.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2006101480675A CN100461557C (en) | 2006-12-27 | 2006-12-27 | Te, cadmium and Hg optical range limiter with the continuously adjusting output light intensity of the passive saturated clamp |
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| CNB2006101480675A CN100461557C (en) | 2006-12-27 | 2006-12-27 | Te, cadmium and Hg optical range limiter with the continuously adjusting output light intensity of the passive saturated clamp |
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| CN1996685A CN1996685A (en) | 2007-07-11 |
| CN100461557C true CN100461557C (en) | 2009-02-11 |
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Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101726364B (en) * | 2009-11-18 | 2011-04-27 | 中国科学院上海技术物理研究所 | Method for enhancing internal absorption factor of infrared focal plane array device |
| CN102681288B (en) * | 2012-05-23 | 2015-03-25 | 上海交通大学 | Silicon-based optical amplitude limiter |
| CN103941517B (en) * | 2014-04-11 | 2016-07-06 | 东南大学 | A kind of optical limiter of low clip threshold value |
| CN104090447B (en) * | 2014-07-14 | 2016-10-19 | 中国科学院半导体研究所 | Passive light amplitude limiter |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3656836A (en) * | 1968-07-05 | 1972-04-18 | Thomson Csf | Light modulator |
| JPH08262380A (en) * | 1993-01-27 | 1996-10-11 | At & T Corp | Nonresonant fabry-perot pin modulation device |
| US20010001006A1 (en) * | 1998-09-08 | 2001-05-10 | Min Jiang | Resonant fabry-perot semiconductor saturable absorbers and two photon absorption power limiters |
-
2006
- 2006-12-27 CN CNB2006101480675A patent/CN100461557C/en not_active Expired - Fee Related
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3656836A (en) * | 1968-07-05 | 1972-04-18 | Thomson Csf | Light modulator |
| JPH08262380A (en) * | 1993-01-27 | 1996-10-11 | At & T Corp | Nonresonant fabry-perot pin modulation device |
| US20010001006A1 (en) * | 1998-09-08 | 2001-05-10 | Min Jiang | Resonant fabry-perot semiconductor saturable absorbers and two photon absorption power limiters |
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