CN100459045C - Method for growing wide spectrum indium arsenide/aluminium gallium arsenide quantum point material - Google Patents
Method for growing wide spectrum indium arsenide/aluminium gallium arsenide quantum point material Download PDFInfo
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- CN100459045C CN100459045C CNB2006100648838A CN200610064883A CN100459045C CN 100459045 C CN100459045 C CN 100459045C CN B2006100648838 A CNB2006100648838 A CN B2006100648838A CN 200610064883 A CN200610064883 A CN 200610064883A CN 100459045 C CN100459045 C CN 100459045C
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Abstract
The invention provides a growth method of wide spectrum InAs/GaAlAs quantum dot material, which is a growth method of burying self-organization quantum dot material based on molecular beam epitaxy device, wherein the method includes: choosing a substrate; preparing an GaAlAs buffer layer, as a lower barrier layer for an active region to be mentioned, on the substrate; preparing the active region, working as core part and spectrum emission region of the InAs/GaAlAs quantum dot material, on the GaAlAs buffer layer; preparing low temperature GaAlAs cover layer, as an upper barrier layer for the active region, on the active region; preparing a high temperature GaAlAs cover layer which is the outmost layer of the InAs/GaAlAs quantum dot material for protection, in this manner, the growth of material can be completed.
Description
Technical field
The present invention relates to a kind of wide spectrum indium arsenide/aluminium gallium arsenide quantum point material molecular beam epitaxy accretion method, belong to epitaxial growth of semiconductor material growing technology field.
Background technology
Self-organized quantum dot demonstrates tempting application prospect at opto-electronic device as aspects such as laser, detector, optical storages.Utilize the heterogeneity of self-organized quantum dot distribution of sizes, can make and have opto-electronic device incoherent, wide spectral characteristic, as super radiation light emitting tube.The potential barrier component of the emission wavelength of quanta point material and quantum dot size, quantum dot component and encirclement quantum dot is closely related.Can increase the size heterogeneity of quantum dot by optimizing growth parameter(s), reach the purpose of broadening quantum dot light emitting spectrum.Usually, the growth indium arsenic quanta point adopts GaAs buffer layer more on GaAs.In the growth, indium arsenide has bigger diffusion length on GaAs buffer layer.Big diffusion length makes that quantum dot is tending towards evenly being unfavorable for the broadening of quantum dot light emitting spectrum.At present, the Breadth Maximum at the indium arsenic quanta point luminescent spectrum of growing on the GaAs buffer layer is about 110 nanometers.
Summary of the invention
The objective of the invention is to, a kind of wide spectrum indium arsenide/aluminium gallium arsenide quantum point material growing method is provided, and having provided the core growth parameter (as growth temperature, arsenic dimer partial pressure, growth rate, growth thickness etc.) and the material structure of material epitaxy, the present invention can realize that indium arsenide/aluminium gallium arsenide quantum point material has good luminescent characteristic and the wide above luminescent spectrum of 120 nanometers that reaches.The present invention can be applied to structural design and the epitaxial growth that super radiation light emitting tube etc. needs the opto-electronic device active area structure of wide spectral characteristic.
A kind of wide spectrum indium arsenide/aluminium gallium arsenide quantum point material growing method of the present invention, described material growth method is based on the growing method of burying self-organized quantum dot material of molecular beam epitaxial device, it is characterized in that, comprises the steps:
(1) gets a substrate;
(2) preparation aluminum gallium arsenide resilient coating on substrate, this resilient coating is a lower barrier layer for active region hereinafter;
(3) prepare active area on the aluminum gallium arsenide resilient coating, this active area is the core of this indium arsenide/aluminium gallium arsenide quantum point material, is the spectral emissions district of this material;
(4) preparation low temperature aluminum gallium arsenide cap rock on active area, this low temperature aluminum gallium arsenide cap rock is the last barrier layer of above-mentioned active area;
(5) preparation high temperature aluminum gallium arsenide cap rock on low temperature aluminum gallium arsenide cap rock, this high temperature aluminum gallium arsenide cap rock is outermost one deck of this indium arsenide/aluminium gallium arsenide quantum point material, has protective effect, finishes the growth of material.
Wherein active area comprises:
3-10 cycle indium arsenic quanta point, this indium arsenic quanta point have the size heterogeneity of intrinsic, cause the luminescent spectrum of broad;
2-9 cycle aluminum gallium arsenide wall, each cycle aluminum gallium arsenide wall prepare in its lower section on the one-period indium arsenic quanta point and top one-period indium arsenic quanta point under, gaas spacer layer is as barrier layer, be used for the indium arsenic quanta point in separating adjacent cycle, avoided the multicycle quantum dot to form the optical quality that excessive stress accumulation causes and descended; The wall that adopts multicycle quantum dot and suitable thickness is in order to increase the volume density of quantum dot, thereby improves the luminous intensity of material.
Wherein the preparation growth parameter(s) of aluminum gallium arsenide resilient coating is: growth temperature is 600 degrees centigrade; The aluminum gallium arsenide growth rate be the 0.6-1.0 micron/hour; The component of aluminium is 0.15 to 0.20 in the aluminum gallium arsenide; The aluminum gallium arsenide buffer layer thickness is greater than 100 nanometers.
The growth parameter(s) that wherein prepares indium arsenic quanta point is: growth temperature is 500 degrees centigrade; The indium arsenide growth rate was 0.1 monolayer/second; The indium arsenic quanta point deposit thickness is 2.0 monolayers.
Wherein the growth parameter(s) of aluminum gallium arsenide wall is: growth temperature is 500 degrees centigrade; The aluminum gallium arsenide growth rate be the 0.6-1.0 micron per hour; The component of aluminium is 0.15 to 0.20 in the aluminum gallium arsenide; The aluminum gallium arsenide space layer is 15 nanometer to 20 nanometers.
Wherein the growth parameter(s) of low temperature aluminum gallium arsenide cap rock comprises: growth temperature is 500 degrees centigrade; The aluminum gallium arsenide growth rate be the 0.6-1.0 micron per hour; The component of aluminium is 0.15 to 0.20 in the aluminum gallium arsenide; Low temperature aluminum gallium arsenide depth of cover is 10 nanometers;
Wherein the growth parameter(s) of high temperature aluminum gallium arsenide cap rock comprises: growth temperature is 600 degrees centigrade; The aluminum gallium arsenide growth rate be the 0.6-1.0 micron per hour; The component of aluminium is 0.15 to 0.20 in the aluminum gallium arsenide; High temperature aluminum gallium arsenide depth of cover is greater than 90 nanometers;
Wherein selected substrate is a gallium arsenide substrate.
The indium arsenide/aluminium gallium arsenide quantum point material that wherein adopts said method to obtain, its luminescent spectrum width is greater than 120 nanometers.
The indium arsenide/aluminium gallium arsenide quantum point material that wherein adopts said method to obtain, the making that can be applied to super radiation light emitting tube and need the semiconductor photoelectronic device active area structure of wide spectral characteristic.
Description of drawings
For further specifying content of the present invention, below in conjunction with accompanying drawing and instantiation it is further described, wherein:
Fig. 1 is the indium arsenide/aluminium gallium arsenide quantum point material structural representation;
Fig. 2 is an indium arsenide/aluminium gallium arsenide quantum point material electroluminescence spectrogram.
Embodiment
Please, the present invention relates to a kind of wide spectrum indium arsenide/aluminium gallium arsenide quantum point material molecular beam epitaxy accretion method, specifically implement as follows in conjunction with consulting Fig. 1:
Growth aluminum gallium arsenide resilient coating 1, aluminum gallium arsenide resilient coating 1 is grown in above the gallium arsenide substrate 6, and this aluminum gallium arsenide resilient coating 1 is the barrier layer of following indium arsenic quanta point 2, has the effect of limiting carrier.Growth parameter(s) is, specifically comprises:
Underlayer temperature is 600 degrees centigrade; The aluminum gallium arsenide growth rate be the 0.6-1.0 micron/hour; The component of aluminium is 0.15 to 0.20 in the aluminum gallium arsenide; The aluminum gallium arsenide buffer layer thickness is greater than 100 nanometers.
Adopt the aluminum gallium arsenide resilient coating 1 of above-mentioned parameter growth to have very high structure and optical quality, its surface undulation is in 1-2 monolayer scope.
The indium arsenic quanta point 2 in three to ten cycles of growth, bottom one deck indium arsenic quanta point 2 is grown in above the aluminum gallium arsenide resilient coating 1, and growth parameter(s) is, specifically comprises:
Underlayer temperature is 500 degrees centigrade; The indium arsenide growth rate was 0.1 monolayer/second; The indium arsenic quanta point deposit thickness is 2.0 monolayers.
Adopt above-mentioned optimization growth parameter(s), can obtain to have the heteropical high-quality quantum dot of large-size, thereby improve the luminous intensity and the spectral width of material.
The aluminum gallium arsenide wall 3 in two to nine cycles of growth, this aluminum gallium arsenide wall 3 all are grown in the middle of the indium arsenic quanta point 2 in two adjacent cycles.This aluminum gallium arsenide wall is as barrier layer, is used for the indium arsenic quanta point 2 in separating adjacent cycle, avoided multicycle quantum dot 2 to form the optical quality that excessive stress accumulation causes and descended.Growth parameter(s) is, specifically comprises:
Underlayer temperature is 500 degrees centigrade; The aluminum gallium arsenide growth rate be the 0.6-1.0 micron/hour; The component of aluminium is 0.15 to 0.20 in the aluminum gallium arsenide wall; The aluminum gallium arsenide space layer is 15 nanometer to 20 nanometers.
The indium arsenic quanta point 2 in an above-mentioned 3-10 cycle and the aluminum gallium arsenide wall 3 in 2-9 cycle have constituted the active area 10 of this indium arsenide/aluminium gallium arsenide quantum point material, and it is the core of this material, is determining the optical quality of material.The wall that adopts multicycle quantum dot and suitable thickness is in order to increase the volume density of quantum dot, thereby improves the luminous intensity of material.
Growing low temperature aluminum gallium arsenide cap rock 4, this low temperature GaAs cap rock 4 is grown in above the uppermost indium arsenic quanta point.This low temperature GaAs cap rock 4 is the last barrier layer of above-mentioned active area 10, the effect of restricted charge carrier.Its another effect is in the temperature temperature-rise period from low to high, to prevent that indium arsenic quanta point 2 is owing to high temperature decomposes desorption after active area 10 growths finish.Growth parameter(s) is, specifically comprises:
Underlayer temperature is 500 degrees centigrade; The aluminum gallium arsenide growth rate be the 0.6-1.0 micron/hour; Low temperature aluminum gallium arsenide depth of cover is 10 nanometers;
Growth high temperature aluminum gallium arsenide cap rock 5, this high temperature aluminum gallium arsenide cap rock 5 is grown in above the low temperature aluminum gallium arsenide cap rock 4.This high temperature aluminum gallium arsenide cap rock 5 is outermost one decks of this indium arsenide/aluminium gallium arsenide quantum point material, has protective effect.Growth parameter(s) is, specifically comprises:
Underlayer temperature is 600 degrees centigrade; The aluminum gallium arsenide growth rate be the 0.6-1.0 micron/hour; The component of aluminium is 0.15 to 0.20 in the aluminum gallium arsenide; High temperature aluminum gallium arsenide depth of cover is greater than 90 nanometers.
Table 1 is the indium arsenide/aluminium gallium arsenide quantum point material growth parameter(s)
Table 1
| Sequence number | Material | Growth temperature (degree centigrade) | Growth rate | Growth thickness |
| 1 | Al(0.15-0.20)GaAs | 600 | 0.6-1.0 micron/hour | Greater than 100 nanometers |
| 2 | InAs | 500 | 0.1 monolayer/second | 2.0 monolayer |
| 3 | Al(0.15-0.20)GaAs | 500 | 0.6-1.0 micron/hour | The 15-20 nanometer |
| 4 | Al(0.15-0.20)GaAs | 500 | 0.6-1.0 micron/hour | 10 nanometers |
| 5 | Al(0.15-0.20)GaAs | 600 | 0.6-1.0 micron/hour | Greater than 90 nanometers |
| 6 | GaAs | - | - | - |
Indium arsenide/aluminium gallium arsenide quantum point material by above execution mode growth has wide luminescent spectrum and high luminous intensity, and its room temperature electroluminescent spectrum is please in conjunction with consulting Fig. 2, and spectral width is greater than 120 nanometers.
Patent of the present invention adopts the method for various growth parameter(s)s in the control molecular beam epitaxial process of repeatedly exploring, and the indium arsenide/aluminium gallium arsenide quantum point material of realization has the advantages such as luminous mass is good, luminescent spectrum is wide. Be applicable to super radiation light emitting tube etc. and need the design of semiconductor photoelectronic device active area structure of wide spectral characteristic and the molecular beam epitaxial growth of this active area structure.
Claims (9)
1, a kind of wide spectrum indium arsenide/aluminium gallium arsenide quantum point material growing method, described material growth method is based on the growing method of burying self-organized quantum dot material of molecular beam epitaxial device, it is characterized in that, comprises the steps:
(1) gets a substrate;
(2) preparation aluminum gallium arsenide resilient coating on substrate, this resilient coating is a lower barrier layer for active region hereinafter;
(3) prepare active area on the aluminum gallium arsenide resilient coating, this active area is the core of this indium arsenide/aluminium gallium arsenide quantum point material, is the spectral emissions district of this material, and wherein active area comprises:
3-10 cycle indium arsenic quanta point, this indium arsenic quanta point have the size heterogeneity of intrinsic, cause the luminescent spectrum of broad;
2-9 cycle aluminum gallium arsenide wall, each cycle aluminum gallium arsenide wall prepare in its lower section on the one-period indium arsenic quanta point and top one-period indium arsenic quanta point under, gaas spacer layer is as barrier layer, be used for the indium arsenic quanta point in separating adjacent cycle, avoided the multicycle quantum dot to form the optical quality that excessive stress accumulation causes and descended; The wall that adopts multicycle quantum dot and suitable thickness is in order to increase the volume density of quantum dot, thereby improves the luminous intensity of material;
(4) preparation low temperature aluminum gallium arsenide cap rock on active area, this low temperature aluminum gallium arsenide cap rock is the last barrier layer of above-mentioned active area;
(5) preparation high temperature aluminum gallium arsenide cap rock on low temperature aluminum gallium arsenide cap rock, this high temperature aluminum gallium arsenide cap rock is outermost one deck of this indium arsenide/aluminium gallium arsenide quantum point material, has protective effect, finishes the growth of material.
2, wide spectrum indium arsenide/aluminium gallium arsenide quantum point material growing method according to claim 1 is characterized in that, wherein the preparation growth parameter(s) of aluminum gallium arsenide resilient coating is: growth temperature is 600 degrees centigrade; The aluminum gallium arsenide growth rate be the 0.6-1.0 micron/hour; The component of aluminium is 0.15 to 0.20 in the aluminum gallium arsenide; The aluminum gallium arsenide buffer layer thickness is greater than 100 nanometers.
3, wide spectrum indium arsenide/aluminium gallium arsenide quantum point material growing method according to claim 1 is characterized in that, the growth parameter(s) that wherein prepares indium arsenic quanta point is: growth temperature is 500 degrees centigrade; The indium arsenide growth rate was 0.1 monolayer/second; The indium arsenic quanta point deposit thickness is 2.0 monolayers.
4, wide spectrum indium arsenide/aluminium gallium arsenide quantum point material growing method according to claim 1 is characterized in that, wherein the growth parameter(s) of aluminum gallium arsenide wall is: growth temperature is 500 degrees centigrade; The aluminum gallium arsenide growth rate be the 0.6-1.0 micron per hour; The component of aluminium is 0.15 to 0.20 in the aluminum gallium arsenide; The aluminum gallium arsenide space layer is 15 nanometer to 20 nanometers.
5, wide spectrum indium arsenide/aluminium gallium arsenide quantum point material growing method according to claim 1 is characterized in that, wherein the growth parameter(s) of low temperature aluminum gallium arsenide cap rock comprises: growth temperature is 500 degrees centigrade; The aluminum gallium arsenide growth rate be the 0.6-1.0 micron per hour; The component of aluminium is 0.15 to 0.20 in the aluminum gallium arsenide; Low temperature aluminum gallium arsenide depth of cover is 10 nanometers;
6, wide spectrum indium arsenide/aluminium gallium arsenide quantum point material growing method according to claim 1 is characterized in that, wherein the growth parameter(s) of high temperature aluminum gallium arsenide cap rock comprises: growth temperature is 600 degrees centigrade; The aluminum gallium arsenide growth rate be the 0.6-1.0 micron per hour; The component of aluminium is 0.15 to 0.20 in the aluminum gallium arsenide; High temperature aluminum gallium arsenide depth of cover is greater than 90 nanometers;
7, wide spectrum indium arsenide/aluminium gallium arsenide quantum point material growing method according to claim 1 is characterized in that, wherein selected substrate is a gallium arsenide substrate.
8, wide spectrum indium arsenide/aluminium gallium arsenide quantum point material growing method according to claim 1 is characterized in that, the indium arsenide/aluminium gallium arsenide quantum point material that wherein adopts said method to obtain, and its luminescent spectrum width is greater than 120 nanometers.
9, wide spectrum indium arsenide/aluminium gallium arsenide quantum point material growing method according to claim 1, it is characterized in that, the indium arsenide/aluminium gallium arsenide quantum point material that wherein adopts said method to obtain, the making that can be applied to super radiation light emitting tube and need the semiconductor photoelectronic device active area structure of wide spectral characteristic.
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| US9559229B2 (en) | 2009-12-31 | 2017-01-31 | Epistar Corporation | Multi-junction solar cell |
| CN102148266A (en) * | 2010-02-09 | 2011-08-10 | 晶元光电股份有限公司 | Multi-junction solar cell |
| CN102136534A (en) * | 2011-02-22 | 2011-07-27 | 中国科学院半导体研究所 | GaAs-based short-wavelength quantum dot superradiation LEDs (Light-Emitting Diode) |
| CN103996766B (en) * | 2014-03-21 | 2017-10-20 | 安徽三安光电有限公司 | Gallium nitride based light emitting diode and preparation method thereof |
| CN104167474B (en) * | 2014-08-11 | 2017-03-29 | 厦门乾照光电股份有限公司 | A kind of high-crystal quality infrarede emitting diode |
| CN104600564B (en) * | 2015-01-12 | 2017-12-19 | 中国科学院半导体研究所 | The method for making broad spectrum indium arsenide/indium phosphide quantum dot laser active area |
| CN108365518A (en) * | 2018-03-13 | 2018-08-03 | 中国科学院半导体研究所 | Difference frequency terahertz quantum cascade laser |
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| JPH11121870A (en) * | 1997-10-09 | 1999-04-30 | Nec Corp | Optical semiconductor device |
| CN1490887A (en) * | 2002-10-17 | 2004-04-21 | 中国科学院半导体研究所 | Super radiative light emitting transistor with self organized quantum spot as active region |
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| High-Performance Quantum-Dot Superluminescent Diodes. Z. Y. Zhang, Z. G. Wang, B. Xu, P. Jin, Z. Z. Sun,andF.Q.Liu.IEEE PHOTONICS TECHNOLOGY LETTERS,Vol.16 No.1. 2004 * |
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