CN100454540C - Semiconductor switch device - Google Patents
Semiconductor switch device Download PDFInfo
- Publication number
- CN100454540C CN100454540C CNB2005101339381A CN200510133938A CN100454540C CN 100454540 C CN100454540 C CN 100454540C CN B2005101339381 A CNB2005101339381 A CN B2005101339381A CN 200510133938 A CN200510133938 A CN 200510133938A CN 100454540 C CN100454540 C CN 100454540C
- Authority
- CN
- China
- Prior art keywords
- switch device
- triode
- diode
- semiconductor switch
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Images
Abstract
This inventioin relates to a semiconductor switch device including four layers of PN structure, a triode and a diode, in which, the collector of the triode is connected with the diode, the triode is NPN, the collector of which is connected with the negative of the diode to constitute a forward conductive switch device, or is PNP, the collector of which is connectd with the positive of the diode to constitute a negative conductive switch device used in industrial automation widely especially to large power automation control.
Description
Technical field
The present invention relates to a kind of electronic switching device, especially relate to a kind of semiconductor switch device.
Background technology
Semiconductor device can be used as electronic switch, and different semiconductor device has different performances and application scenario.The conventional semiconductor switching device has diode, triode, controllable silicon (thyristor) and bidirectional triode thyristor etc., and (the prompt Slav of (Czech) dimension originally reaches, (Britain) John Ge Wo, the special work of (Britain) Duncan A Glan, Wu Yu, Zhang Wanrong, Liu Xingming translates, power semiconductor---theoretical and application (M), Beijing: Chemical Industry Press, 2005.124～226), wherein semiconductor diode can be used as switching device, but its control ability is limited, generally only is used for simple control circuit.Transistor can be used as the switching device in the DC circuit, but it can not work in the alternating current circuit, and when alternating voltage was big slightly, triode can be breakdown, causes burning.Controllable silicon (claiming thyristor again) can be used for direct current and alternating current circuit, but there are a lot of problems in actual applications in controllable silicon.One, totally very difficult because its generation interference spectrum is very wide when controllable silicon is used for the control of alternating current (power frequency) system these interference filterings, and the normal operation of instrument and equipment around serious the interference.When high-power applications, the stability of meeting heavy damage electric power system; Its two, though bidirectional triode thyristor can be used for the stepless time adjustment of alternating current machine, its speed adjustable range is very little, the motor rotation poor-performing; Its three, in case just can not turn-off when getting back to zero (remove that inverter circuit turn-offs or anode voltage) after the controllable silicon conducting, though at present develop turn-off SCR, its turn-off criterion harshness, difficult control.
Summary of the invention
Existing deficiency when the objective of the invention is at the conventional semiconductor device as electronic switch provides a kind of in electronic equipment and automation control, the semiconductor switch device that has wide application prospect in the especially high-power industrial automation control.
The present invention is 4 layers of PN junction structure, is provided with 1 triode and 1 diode, and the collector electrode of triode connects diode; Triode is the NPN triode, and the collector electrode of NPN triode connects the negative pole of diode, constitutes 1 forward conduction switching device, and perhaps triode is the PNP triode, and the collector electrode of PNP triode connects the positive pole of diode, constitutes 1 negative sense actuating switch device.
Described 1 forward conduction switching device and 1 negative sense actuating switch device compose in parallel the bidirectional switch device.
2 in the same way (forward/negative sense) actuating switch device reverse parallel connection form the bidirectional switch device.
Described triode can be fet or other active devices (as electron tube etc.).
Because the said semiconductor switch device of the present invention can work in direct current or alternating current switching circuit, when control utmost point input relevant controlling signal, this semiconductor switch device conducting; When relevant control signal was cancelled, this semiconductor switch device was closed.As the continuous conducting of needs device, need in control utmost point input continuous signal.The present invention can be widely used in industrial automation, especially high-power automation control.The ON time length (pulsewidth) that changes this device can change power output, changes its turn-on frequency, its interference spectrum can be moved to high band, through a low pass filter, the interference spectrum filtering can be made to disturb to reduce to very among a small circle.And the interference spectrum that controllable silicon produces has from the paramount frequency range of low frequency, and interference filtering is totally very difficult.This shows that the present invention has superior application prospect, especially be applied to have very strong advantage in the high-power automation control.
Description of drawings
Fig. 1 is the structure composition diagram of the embodiment of the invention 1.
Fig. 2 is the equivalent circuit diagram of Fig. 1.
Fig. 3 is the structure composition diagram of the embodiment of the invention 2.
Fig. 4 is the equivalent circuit diagram of Fig. 2.
Embodiment
Following examples will the present invention is further illustrated in conjunction with the accompanying drawings.
Embodiment 1:
Referring to Fig. 1 and 2, embodiment 1 is the forward conduction semiconductor switch device, is made up of 1 NPN triode and 1 diode, and the collector electrode of NPN triode connects the negative pole of diode.
Embodiment 2
Referring to Fig. 3 and 4, embodiment 2 is a negative sense conducting semiconductor switching device.Be made up of 1 PNP triode and 1 diode, the collector electrode of PNP triode connects the positive pole of diode.
Embodiment 3
In parallel by 1 forward conduction semiconductor switch device with 1 negative sense conducting semiconductor switching device, can constitute 1 bidirectional switch device.
Embodiment 4
By 2 forward conduction semiconductor switch devices or 2 negative sense conducting semiconductor switching device reverse parallel connections, can constitute 1 bidirectional switch device.
Claims (4)
1, semiconductor switch device is characterized in that being 4 layers of PN junction structure, is provided with 1 triode and 1 diode, and the collector electrode of triode connects diode; Described triode is the NPN triode, and the collector electrode of NPN triode connects diode cathode, constitutes 1 forward conduction switching device, and perhaps triode is the PNP triode, and the collector electrode of PNP triode connects diode cathode, constitutes 1 negative sense actuating switch device.
2, semiconductor switch device as claimed in claim 1 is characterized in that described 1 forward conduction switching device and 1 negative sense actuating switch device compose in parallel the bidirectional switch device.
3, semiconductor switch device as claimed in claim 1 is characterized in that 2 forward conduction switching device reverse parallel connections composition bidirectional switch devices.
4, semiconductor switch device as claimed in claim 1 is characterized in that 2 negative sense actuating switch device reverse parallel connections composition bidirectional switch devices.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2005101339381A CN100454540C (en) | 2005-12-19 | 2005-12-19 | Semiconductor switch device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2005101339381A CN100454540C (en) | 2005-12-19 | 2005-12-19 | Semiconductor switch device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1988151A CN1988151A (en) | 2007-06-27 |
| CN100454540C true CN100454540C (en) | 2009-01-21 |
Family
ID=38184867
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB2005101339381A Expired - Fee Related CN100454540C (en) | 2005-12-19 | 2005-12-19 | Semiconductor switch device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN100454540C (en) |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4130889A (en) * | 1977-05-02 | 1978-12-19 | Monolithic Memories, Inc. | Programmable write-once, read-only semiconductor memory array using SCR current sink and current source devices |
| CN1041481A (en) * | 1988-09-22 | 1990-04-18 | 亚瑞亚·勃朗勃威力有限公司 | Controllable power semiconductor component |
| CN2196820Y (en) * | 1994-03-07 | 1995-05-10 | 许正山 | Silicon controlled rectifier capable of being cut-off |
| WO1996022614A1 (en) * | 1995-01-18 | 1996-07-25 | National Semiconductor Corporation | Silicon controlled rectifier for esd protection |
| US20030222273A1 (en) * | 2001-09-05 | 2003-12-04 | Kunz Keith E. | Device and method of low voltage SCR protection for high voltage failsafe ESD applications |
-
2005
- 2005-12-19 CN CNB2005101339381A patent/CN100454540C/en not_active Expired - Fee Related
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4130889A (en) * | 1977-05-02 | 1978-12-19 | Monolithic Memories, Inc. | Programmable write-once, read-only semiconductor memory array using SCR current sink and current source devices |
| CN1041481A (en) * | 1988-09-22 | 1990-04-18 | 亚瑞亚·勃朗勃威力有限公司 | Controllable power semiconductor component |
| CN2196820Y (en) * | 1994-03-07 | 1995-05-10 | 许正山 | Silicon controlled rectifier capable of being cut-off |
| WO1996022614A1 (en) * | 1995-01-18 | 1996-07-25 | National Semiconductor Corporation | Silicon controlled rectifier for esd protection |
| US20030222273A1 (en) * | 2001-09-05 | 2003-12-04 | Kunz Keith E. | Device and method of low voltage SCR protection for high voltage failsafe ESD applications |
Also Published As
| Publication number | Publication date |
|---|---|
| CN1988151A (en) | 2007-06-27 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN105514929A (en) | Self-power direct current solid state circuit breaker based on normal open type SiC device | |
| JP2009201096A (en) | Switch circuit | |
| CN101350613A (en) | Electronic switch | |
| CN105871230B (en) | A kind of driving circuit of SiC MOSFET pipes | |
| US9490794B1 (en) | Dynamic shutdown protection circuit | |
| US8432212B2 (en) | Switching element having an electromechanical switch and methods for making and using same | |
| CN105306030A (en) | Main power circuit for alternating current solid state power controller | |
| CN211791256U (en) | Power factor correction circuit, air conditioner controller and air conditioner | |
| CN100454540C (en) | Semiconductor switch device | |
| US9741503B2 (en) | Control circuit of switch device | |
| KR20240022436A (en) | Circuit structure to prevent current reverse flow | |
| CN106452071B (en) | A kind of power control circuit of wide frequency ranges | |
| CN107872214A (en) | A kind of jamproof light coupling relay | |
| CN109149925B (en) | A kind of buck circuit | |
| CN112467961A (en) | High-speed small-size large-current output switching circuit | |
| JP2006301804A (en) | Rush current reducing circuit | |
| CN209046518U (en) | High-power parallel connection power supply driving circuit based on IGBT | |
| CN207853868U (en) | A kind of light coupling relay of zero passage driving | |
| JP4355683B2 (en) | Pseudo capacitance circuit | |
| CN212277916U (en) | Overcurrent protection circuit of switching transistor | |
| CN203674695U (en) | Changing short-circuit rapid-protection circuit suitable for being used between direct-current circuits | |
| CN111030662B (en) | IGBT grid driving circuit | |
| CN110107593B (en) | Control circuit and control method for unbiased magnetic bearing coil | |
| CN112803933A (en) | Anti-impact slow-conduction control electronic switch circuit | |
| CN210201802U (en) | System convenient for accelerating switching of transistor |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20090121 Termination date: 20201219 |