CN100442367C - Dual-layer phase-change information recording medium and recording and reading method using the same - Google Patents

Dual-layer phase-change information recording medium and recording and reading method using the same Download PDF

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CN100442367C
CN100442367C CNB2004800273639A CN200480027363A CN100442367C CN 100442367 C CN100442367 C CN 100442367C CN B2004800273639 A CNB2004800273639 A CN B2004800273639A CN 200480027363 A CN200480027363 A CN 200480027363A CN 100442367 C CN100442367 C CN 100442367C
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layer
protective seam
dual
recording medium
change information
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CN1856828A (en
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岩佐博之
篠塚道明
真贝胜
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Ricoh Co Ltd
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Ricoh Co Ltd
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Abstract

A two-layer phase-change information recording medium excellent in overwrite characteristic and rewritable at high-density particularly even by using a blue-violet laser beam. The two-layer phase-change information recording medium comprises a first substrate, a second substrate, and between the first and second substrates, at least a first information layer, an intermediate layer, and a second information layer in order of mention. Information is at least either recorded or reproduced by projecting a laser beam from the first substrate side. The first information layer has at least a first heat-diffusion layer, a first protective layer, a first recording layer, a second protective layer, a first reflective layer, and a second heat-diffusion layer in order of mention. The thicknesses of the first and second protective layers are 35 nm or less, and the thicknesses of the first and second heat-diffusion layers are 10 nm or more. The thickness d1 (nm) of the first protective layer and the thickness d2 (nm) of the second one satisfy the relation d1<=D2+5 nm.

Description

Dual-layer phase-change information recording medium and recording and playback method thereof
Technical field
The present invention relates to utilize light such as laser to carry out recording of information and reproduce at least any the time employed dual-layer phase-change information recording medium and these dual-layer phase-change information recording medium recording and playback method." bilayer " in this instructions is meant to have the two information layers that comprises recording layer at least.
Background technology
In general compact disk (CD) and DVD (Digital Versatile Disc) are used to the reflectance varies that produces from the interference of light of pit bottom and light face, detect the recording and tracking signal of binary signal, carry out recording of information etc. thus.
In recent years,, but have the rewriteable compact disc (CD-RW:CD-Rewritable) of phase-change type, also propose the rewritable DVD of various phase-change types for DVD except just being extensive use of as the recording medium that has with the reproduction interchangeability (interchangeability) of CD.In addition, with respect to the capacity of the 4.7GB of DVD, propose to have with record-playback wavelength shortwaveization, and numerical aperture NA (Numerical Aperture) is improved, constitute Blu-ray Disk system more than or equal to the 20GB capacity to 350nm～420nm.
The rewritten CD of these phase-change types and DVD, utilization changes the detection of carrying out recording information signal by the reflection differences and the phase differential of the refringence generation of noncrystalline and crystalline state.Common phase-change type recording medium has the structure that sets gradually bottom protective seam, phase-change type recording layer, upper protective layer and reflection horizon on substrate at least; utilize the multiple interference of these structural sheets to control reflection differences and phase differential, can have the interchangeability of CD and DVD.In CD-RW, can in dropping to the scope of 15～25% degree, guarantee reflectivity the interchangeability of CD and tracer signal and groove signal, in the additional CD driver that the covered amplification system of situation that reflectivity is low arranged, can reproduce.
Recently, according to the viewpoint that the recording capacity of rewritable phase-change type recording medium is increased, motion has the structure (for example with reference to patent documentation 1～3 etc.) of single-surface double-layer.
In this case, described phase-change type recording medium only just can be deleted and recording process again by the intensity modulated of an optically focused light beam, in phase-change type recording mediums such as CD-RW and rewritable DVD, so-called record is meant that comprising the covering of writing down simultaneously and deleting rewrites (O/W) record.
Utilize the information record of phase change can use crystallization, noncrystalline or their admixture, can also use a plurality of crystallization phases, but the rewritable phase-change type recording medium that is practical now, generalized case be make do not write down and delete state any forms amorphous mark and carries out record for crystalline state at least.
As the material of described phase-change type recording medium, all be chalcogen, for example chalcogen compound class alloys that contain S, Se, Te that use more.Can enumerate particularly with GeTe-Sb 2Te 3False bianry alloy is the GeSbTe class of major component, with InTe-Sb 2Te 3False bianry alloy is the InSbTe class of major component, with Sb 0.7Te 0.3Eutectic alloy is AgInSbTe class, GeSbTe class of major component etc.Be Sb-Te eutectic alloy class recording materials particularly wherein as one of material that generally in phase-change type recording mediums such as CD-RW, uses, itself and GeTe-Sb 2Te 3False binary compound class recording materials are compared, and it is deleted than good.And owing to have a high sensitivity, so be good aspect the clear-cut of the amorphous state portion of record mark as everyone knows.
But described Sb-Te eutectic class recording materials, because the crystallization speed of its material is fast, so for amorphous materialization just must be carried out chilling in the shorter time, be that it is the material that need take the chilling structure, at recording layer is in the thin structure in this reflection horizon of single-surface double-layer type, has the problem that is difficult to form mark.
Propose to have at individual layer phase-change information recording medium (with reference to patent documentation 4) with in about described patent documentation 2 of dual-layer phase-change information recording medium etc., big and little nitride or the carbonide of absorptivity of described use thermal conductivity ratio approaches the method for chilling structure in that the layer that thermal diffusion function that the reflection horizon is played assists (below be also referred to as " thermal diffusion layer ") is set on the reflection horizon again.Aspect the described problem points that this method is produced under the situation that solves the reflection horizon attenuate that constitutes first information layer is effective.
But,,, consequently have the CD self that is provided with thermal diffusion layer and can not get the problem that characteristic is rewritten in enough coverings so the thermal diffusion layer that forms is easy to generate crackle because the stress of materials such as these nitride or carbonide is big.In addition, especially it absorbs greatly carbide material at short wavelength side, has just produced the problem that can not increase the light transmission of first information layer for the such CD of future generation of Blu-ray Disk system that uses bluish violet color laser.
The first information layer of existing double-deck phase-change type recording medium according to the viewpoint of cover rewriting characteristic, is injected substrate that side sees with light and the film thickness of the protective seam between the recording layer is set thickly.But it is big that the change of the thick then film thickness of the film thickness of protective seam just becomes, and produces reflectivity problem devious in face.Therefore, non-patent literature 1 in the upper and lower settings of recording layer AIN as radiator structure, but owing to form ZnSSiO 2/ AIN/ZnSSiO 2Such three-decker, result are that total layer thickness can not attenuate, and the above-mentioned problem that is caused by the film thickness change can not get solving.Propose to have in described patent documentation 3, it is two-layer making protective seam, and the temperature conductivity of protective layer material that makes a side is greater than the temperature conductivity of the protective layer material that joins with recording layer.But owing in this motion, join the film thickness of protective seam of a side more than or equal to 30nm, so the sufficient chilling structure of for Sb-Te eutectic class recording materials, can not saying so with recording layer.In addition, use its some footpath of CD of future generation of bluish violet color laser little, so have the problem that then can not obtain abundant effect more than or equal to 30nm.
Patent documentation 1: No. 2702905 communique of patent
Patent documentation 2: the spy opens the 2000-222777 communique
Patent documentation 3: the spy opens the 2000-322770 communique
Patent documentation 4: the spy opens flat 8-50739 communique
Non-patent literature 1:ODS2001, Technical Digest P28
Summary of the invention
The present invention develops in view of above-mentioned present situation, and it solves existing described variety of issue, will realize that following purpose is as problem.Promptly the purpose of this invention is to provide a kind of covering and rewrite characteristic good, also can be when particularly using bluish violet color laser with high density dual-layer phase-change information recording medium that rewrite and the recording and playback method that uses these dual-layer phase-change information recording medium.
The method that solves described problem is as follows.Promptly
(first aspect); a kind of dual-layer phase-change information recording medium; has first substrate; second substrate; and between this first substrate and this second substrate, has first information layer at least successively; the middle layer and second Information Level; laser is injected from described first substrate-side and is carried out at least a of recording of information and reproduction; wherein; described first information layer has first thermal diffusion layer at least successively; first protective seam; first recording layer; second protective seam; first reflection horizon and second thermal diffusion layer; the film thickness of described first protective seam and second protective seam is less than or equal to 35nm; the film thickness of described first thermal diffusion layer and second thermal diffusion layer is more than or equal to 10nm, and the film thickness d of described first protective seam 1(nm) with the film thickness d of described second protective seam 2(nm) satisfy following formula d 1≤ d 2The relation of+5nm.
Be somebody's turn to do in (first aspect) described dual-layer phase-change information recording medium; because the film thickness of described first protective seam and second protective seam is less than or equal to 35nm; the film thickness of described first thermal diffusion layer and second thermal diffusion layer is more than or equal to 10nm, and the film thickness d of described first protective seam 1(nm) with the film thickness d of described second protective seam 2(nm) satisfy following formula d 1≤ d 2The relation of+5nm cover to be rewritten characteristic good so can provide, the dual-layer phase-change information recording medium that also can rewrite with high density when particularly using bluish violet color laser.
(second aspect), in above-mentioned (first aspect) described dual-layer phase-change information recording medium, the temperature conductivity of described first protective seam of the thermal conductivity ratio of first thermal diffusion layer and second thermal diffusion layer and second protective seam is big.
Be somebody's turn to do in (second aspect) described dual-layer phase-change information recording medium; temperature conductivity by making first thermal diffusion layer is greater than the temperature conductivity of first protective seam; can guarantee to consider the super chilling structure of protective seam heat conduction carryover effects, improve the deletion ratio and raising covering rewriting characteristic.In addition, the temperature conductivity by making second thermal diffusion layer can be replenished the thermal diffusion effect in the first thin reflection horizon greater than the temperature conductivity of second protective seam, can guarantee super chilling structure.
(third aspect), in above-mentioned (first aspect) described dual-layer phase-change information recording medium; first protective seam and second protective seam are respectively to contain fusing point or decomposition point more than or equal to 1000 ℃ heat-resisting compound, and contain from ZnS, ZnO, TaS 2And select at least a and contain more than or equal to 50mol%, be less than or equal to the compound dielectric of 90mol% in the terres rares sulfide.
(fourth aspect), in above-mentioned (third aspect) described dual-layer phase-change information recording medium, fusing point or decomposition point are any in the fluoride of oxide, nitride and the carbonide of the element selected from Mg, Ca, Sr, Y, La, Ce, Ho, Er, Yb, Ti, Zr, Hf, V, Nb, Ta, Zn, Al, Si, Ge, Pb and the element selected from Ca, Mg, Li more than or equal to 1000 ℃ heat-resisting compound.
(the 5th aspect), in above-mentioned (fourth aspect) described dual-layer phase-change information recording medium, first protective seam and second protective seam comprise ZnS and SiO 2
(the 6th aspect), in above-mentioned (first aspect) described dual-layer phase-change information recording medium; first protective seam and second protective seam any contains ZnS at least, and first thermal diffusion layer and second thermal diffusion layer any contains the oxide that shows electric conductivity at least.
(the 7th aspect), in above-mentioned (first aspect) described dual-layer phase-change information recording medium, first thermal diffusion layer and second thermal diffusion layer any contains IZO (In at least 2O 3-ZnO) and ITO (In 2O 3-SnO 2) any.
(eight aspect), in above-mentioned (first aspect) described dual-layer phase-change information recording medium, the film thickness of first protective seam and second protective seam is 5～30nm.
(the 9th aspect), in above-mentioned (eight aspect) described dual-layer phase-change information recording medium, the film thickness of first protective seam and second protective seam is less than or equal to 25nm.
(the tenth aspect), in above-mentioned (first aspect) described dual-layer phase-change information recording medium, the film thickness of first thermal diffusion layer and second thermal diffusion layer is 10～200nm.
In each described dual-layer phase-change information recording medium of above-mentioned (third aspect)～(aspect the tenth); by selecting the film thickness or the material of first protective seam, second protective seam, first thermal diffusion layer and second thermal diffusion layer, the super chilling structure that can realize ideal.
(the tenth on the one hand), in above-mentioned (first aspect) described dual-layer phase-change information recording medium, first recording layer contains Sb and Te, also contains select from Ag, In, Ge, Sn, Al, Ta, V, Co, Zr, Ga, Si, Nb, Cr, Pt, Pb, S, N, O at least a.
(the 12 aspect), in above-mentioned (first aspect) described dual-layer phase-change information recording medium, the film thickness of first recording layer is 3～15nm.
(the 13 aspect), in above-mentioned (first aspect) described dual-layer phase-change information recording medium, select at least a contained in first reflection horizon from Au, Ag, Cu, W, Al and Ta.
(the 14 aspect), in above-mentioned (first aspect) described dual-layer phase-change information recording medium, the film thickness in first reflection horizon is 3～20nm.
In above-mentioned (the tenth on the one hand)～(aspect the 14) each described dual-layer phase-change information recording medium, can meet record, reproducing condition and the transmissivity optimization of reflectivity, recording sensitivity and the first information layer of layer separately, the dual-layer phase-change information recording medium to the record-playback characteristic good of the first information layer and second Information Level can be provided.
(the 15 aspect), in above-mentioned (first aspect) described dual-layer phase-change information recording medium, only 40～70% of the light transmission relative wavelength 350～700nm of first information layer.
In these (aspect the 15) described dual-layer phase-change information recording medium, can provide the sensitivity of first information layer, second Information Level all to get well and the dual-layer phase-change information recording medium of record-playback characteristic good.
(the 16 aspect), in above-mentioned (first aspect) described dual-layer phase-change information recording medium, between first substrate and first thermal diffusion layer, have hyaline layer.
In these (aspect the 16) described dual-layer phase-change information recording medium, even under the situation of the thin thickness of first substrate, also can provide the dual-layer phase-change information recording medium that to make easily.
(the 17 aspect), in above-mentioned (first aspect) described dual-layer phase-change information recording medium, between second protective seam and first reflection horizon, have first restraining barrier.
(the tenth eight aspect), in above-mentioned (aspect the 17) described dual-layer phase-change information recording medium, Ag is contained in first reflection horizon.
In this (aspect 17) and (the tenth eight aspect) described dual-layer phase-change information recording medium, can provide the good dual-layer phase-change information recording medium of preservation reliability that suppressed the reflection horizon corrosion.
(the 19 aspect), in above-mentioned (first aspect) described dual-layer phase-change information recording medium, the thickness of first substrate is 10～600 μ m.
Be somebody's turn to do in (the 19 aspect) described dual-layer phase-change information recording medium,, also can carry out at least one in recording of information and the reproduction well even under the situation that the numerical aperture NA of object lens changes.
The recording and playback method of (the 20 aspect), a kind of dual-layer phase-change information recording medium, it is with respect to each Information Level of each described dual-layer phase-change information recording medium of above-mentioned (first aspect)～(the 19 aspect), from first substrate-side inject the light beam of wavelength 350～700nm and carry out recording of information and reproduce at least a.
In the recording and playback method that should (the 20 aspect) described dual-layer phase-change information recording medium, use each described dual-layer phase-change information recording medium of above-mentioned (first aspect)～(the 14 aspect) to carry out at least a in jumbo record and the reproduction.
Can solve existing variety of issue according to the present invention, can provide a kind of covering to rewrite characteristic good, particularly the dual-layer phase-change information recording medium that when using bluish violet color laser, also can rewrite with high density.
Description of drawings
Fig. 1 is the summary section of the dual-layer phase-change information recording medium of one embodiment of the invention;
Fig. 2 is the summary section of the dual-layer phase-change information recording medium of other embodiments of the invention;
Fig. 3 is the summary section that first substrate and second substrate are provided with the dual-layer phase-change information recording medium of groove;
Fig. 4 is the summary section that first substrate and middle layer are provided with the dual-layer phase-change information recording medium of groove.
Embodiment
(dual-layer phase-change information recording medium)
Dual-layer phase-change information recording medium of the present invention, it has first information layer, middle layer and second Information Level at least successively between first substrate and second substrate, and also has other layers as required.
Described first information layer has first thermal diffusion layer, first protective seam, first recording layer, second protective seam, first reflection horizon and second thermal diffusion layer at least successively, and also has other layer as required.
In the present invention, the film thickness of described first protective seam and second protective seam is less than or equal to 35nm, and the film thickness of described first thermal diffusion layer and second thermal diffusion layer is more than or equal to 10nm, and the film thickness d of described first protective seam 1(nm) with the film thickness d of described second protective seam 2(nm) need satisfy following formula d 1≤ d 2The relation of+5nm.Their details is narrated in the back.
In addition, the temperature conductivity of described first thermal diffusion layer and second thermal diffusion layer is the biggest like the temperature conductivity of first protective seam and described second protective seam.
Dual-layer phase-change information recording medium of the present invention have following feature: for the applicable existing technique known of recording layer that is made of the phase-change type material and reflection horizon; but then use specific material for protective seam and thermal diffusion layer, and stipulated the relation of first protective seam and the second protective seam film thickness.
At this; Fig. 1 has represented the summary section of the dual-layer phase-change information recording medium of one embodiment of the invention; this carrier has first substrate 1, first thermal diffusion layer 2, first protective seam 3, first recording layer 4, second protective seam 5, first restraining barrier 14, first reflection horizon 6, second thermal diffusion layer 7, middle layer 8, the 3rd protective seam 9, second recording layer 10, the 4th protective seam 11, second restraining barrier 15, second reflection horizon 12, second substrate 13, and also has other layer as required.First restraining barrier 14 and second restraining barrier 15 are provided with as required.
Fig. 2 has represented the summary section of the dual-layer phase-change information recording medium of other embodiments of the invention; this carrier has first substrate 1, hyaline layer 16, first thermal diffusion layer 2, first protective seam 3, first recording layer 4, second protective seam 5, first restraining barrier 14, first reflection horizon 6, second thermal diffusion layer 7, middle layer 8, the 3rd protective seam 9, second recording layer 10, the 4th protective seam 11, second restraining barrier 15, second reflection horizon 12, second substrate 13, and also has other layer as required.In addition, first restraining barrier 14, second restraining barrier 15 and hyaline layer 16 are provided with as required.Described hyaline layer 16 is thin tablets of used thickness on first substrate 3, in the not setting simultaneously of the carrier of manufacture method and Fig. 1.
The order of each layer of dual-layer phase-change information recording medium of Fig. 1 and Fig. 2 be suitable for the optically focused light beam record-playback used via first substrate 1 for example laser to the situation of recording layer irradiation.
(substrate)
Described first substrate 1 need make the abundant transmission of the light that shines for record-playback, can at present known central suitable selection use in this technical field.
Material as described first substrate uses glass, pottery, resin etc. usually, but aspect mouldability and cost, resin is suitable.
As described resin, for example can enumerate: polycarbonate resin, acrylic resin, epoxy resin, polystyrene resin, acrylonitritrile-styrene resin resin, polyvinyl resin, acrylic resin, silicon resinoid, fluorine-type resin, ABS resin, urethane resin etc., be desirable wherein at polycarbonate resin good aspect mouldability, optical characteristics, the cost and polymethylmethacrylate propylene resins such as (PMMA), polycarbonate resin also has in CD by the most widely used actual achievement, and cheap, so be optimal material.
On the face of the Information Level that forms described first substrate 3, can also be as required and form the spiral fashion that Laser Tracking uses or the groove of concentric circles etc. and be called groove usually and engage facial convex-concave pattern, it is usually by shapings such as jet forming method or dry film methods.It is desirable to, its spacing is less than or equal to 0.8 μ m, preferably 0.1～0.8 μ m.Described groove not necessarily must be geometric rectangle or trapezoidal groove, for example also can form the different waveguide road of refractive index by ion injection etc., forms optic groove.
The thickness of described first substrate 3 has no particular limits, and can suitably select according to purpose, it is desirable to 10～600 μ m.The thickness of described substrate is preferably adjusted according to the numerical aperture (NA) of recording/reproducing system, and for example substrate thickness is that 550～600 μ m are then better when NA=0.65, and substrate thickness is that 69～100 μ m are then better when NA=0.85.
Material as described second substrate 13 can use and the first substrate identical materials, also can use for the opaque material of record-playback light, can also be different on material, groove shape with first substrate.The thickness of second substrate 13 has no particular limits, can be according to purpose and suitably select, it is desirable to select the thickness of second substrate 13, so that the aggregate thickness of itself and first substrate, 1 thickness is 1.1～1.3mm, preferably about 1.2mm.
(middle layer and hyaline layer)
Described middle layer 8 and hyaline layer 16 are preferably little to the light absorption of the light wavelength of shining for record-playback, as material, resin is suitable from mouldability and cost aspect, can use uv curing resin, late effect property resin, thermoplastic resin etc.In addition, can use the double sticky tape (for example adhesive sheet DA-8320 of Nitto Denko Corp's system) etc. of CD applying usefulness.
On described second substrate 13 and middle layer 8, also can form the convex-concave pattern that pass through gathering sill that jet forming method or dry film method etc. be shaped etc. same with first substrate 1.
Described middle layer 8 is when carrying out record-playback, and pick-up can be discerned first information layer and also separate optically with second Information Level, and its thickness is 10～70 μ m preferably.If thinner than 10 μ m, then produce the interlayer cross-talk, if thicker, then when being carried out record-playback, second Information Level produces spherical aberration than 70 μ m, the tendency of record-playback difficulty is arranged.
The thickness of described hyaline layer 16 has no particular limits, can suitably select according to purpose, make first substrate 1 of optical information recording media that the thickness of the best first substrate 1 of the double-deck phase-change type optical information recording media that the manufacture method of hyaline layer 16 makes Fig. 2 different with manufacture method is not set like that by Fig. 1 with the same degree that adds up to of hyaline layer 16 thickness, adjust the thickness of first substrate 1 and hyaline layer 16 with this.For example under the situation of NA=0.85, if the thickness of first substrate 1 of carrier shown in Figure 1 is 100 μ m and can obtains good record and the deletion performance, the thickness of first substrate 1 of carrier then shown in Figure 2 is 50 μ m, and it is 50 μ m that the thickness of hyaline layer 16 preferably is set at.
(recording layer)
Described first recording layer 4 and second recording layer 10 are recording layers of phase-change type, and its thickness is different with second recording layer, 10 its desirable scopes for first recording layer 4.The film thickness of described first recording layer 4 it is desirable to 3～15nm, preferably 3～10nm.If the film thickness of described first recording layer 4 is less than 3nm, then be difficult to form the film of uniform thickness, and the slack-off tendency of crystallization speed is arranged, make the deletion in the short time become difficult easily, if surpass 15nm, then transmissivity reduces and the sensitivity of second Information Level is reduced.
On the other hand, the film thickness of described second recording layer 10 is desirable in the scope of 3～100nm.If described film thickness is less than 3nm, then produce the unfavorable condition same with first recording layer 4, if surpass 100nm, then be difficult to obtain the optical contrast, and be easy to generate crackle.
Be less than or equal to the such high density recording of 0.5 μ m for the shortest mark lengths, the film thickness of second recording layer 10 is 3～25nm preferably.If less than 3nm, then reflectivity is low excessively, and easily film is impacted early days of growth, produce the situation of forming inhomogeneous and sparse film, if surpass 25nm, then big, the recording sensitivity variation except the thermal capacitance quantitative change, because crystalline growth is three-dimensional, the tendency of beating and uprising so the edge busyness of noncrystalline mark is arranged.In addition, second recording layer 10 is remarkable by the volume change that phase change causes, it is bad to cover the permanance of rewriting (O/W) repeatedly, so undesirable.According to beating and the viewpoint that covers rewriting (O/W) permanance repeatedly of mark end, it is better setting 3～20nm for.
The density of described first recording layer 4 and second recording layer 10, more than or equal to volume density 80% for well, more preferably greater than or equal 90%.
In order to improve the density of described first recording layer 4 and second recording layer 10, the pressure of gas jet when in the spatter film forming method, needing to reduce film forming rare gas such as () Ar or wait the amount that strengthens to the high energy Ar of recording layer irradiation near target front placement substrate.High energy Ar is rebounded and is arrived substrate-side to the part of the Ar of target radiation ion for sputter, or the Ar ion in the plasma is quickened by the sheath voltage of whole of substrate (シ one ス Electricity pressure) and arrives any of substrate.The radiation response of this high energy rare gas is called " atomic peening effect: atom shot blasting effect ".
The sputter that normally used Ar gas carries out is blended in the sputtered film Ar by " atom shot blasting effect ".Be blended into the Ar amount in the film and can estimate the atom shot blasting effect by this.Even the Ar amount means that at least high energy Ar radiation response is little, forms the sparse film of density easily.And if Ar amount is many, then high energy Ar irradiation is fierce, though density uprises, the Ar that is taken in the film becomes invalid when rewriting (O/W) and separates out covering repeatedly, and permanance is repeatedly worsened.
Ar amount suitable in described recording layer (first recording layer 4, the second recording layer 10) film is 0.1～1.5 atom %.Come compared with d.c. sputtering, use high-frequency sputtering can reduce in the film Ar amount and obtain highdensity film, so it is desirable.
The material of described first recording layer 4 and second recording layer 10 is to be made of the film of the alloy that structural element is mainly contained Sb and Te as principal ingredient.Also can in described each recording layer that constitutes by this structural element, add other elements that add up to about 10 atom % as required.Wherein, Ge storage stability and strong contrast than aspect on be suitable.Add in each recording layer optical constant that can the inching recording layer to 0.1～5 atom % scope by at least a element that will from O, N or S, select.But surpass 5 atom % if add, then crystallization speed reduces, and the deletion mis-behave is undesirable.
Crystallization speed when covering rewriting in order not reduce also increases aging stability, and at least a addition that it is desirable to select from V, Nb, Ta, Cr, Co, Pt and Zr is less than or equal to 8 atom %, preferably 0.1～5 atom %.
With respect to SbTe, the total addition of above-mentioned interpolation element and Ge preferably is less than or equal to 15 atom %.If contain, then bring out being separated beyond the Sb greater than 15 atom %.Particularly at the Ge amount more than or equal to 3 atom % and be less than or equal under the situation of 5 atom %, additive effect is remarkable.
In order to improve aging stability and to carry out the inching of refractive index, at least a addition of Si, Sn and Pb is less than or equal to 5 atom % for well, preferably 0.1～3 atom %.These total additions that add elements and Ge are less than or equal to 15 atom % for well, preferably 0.2～10 atom %.In addition, Si, Sn, each element of Pb are identical with Ge, the element with 4 coordinated network structures.
Be less than or equal to Al, Ga, the In of 8 atom % by interpolation, can in the rising crystallized temperature, reduce and beat, have the effect of improving recording sensitivity, but also be easy to generate segregation, so 0.1～6 atom % is desirable.Each addition of Al, Ga, In and the total addition of Ge addition are less than or equal to 15 atom % for well, preferably 0.2～13 atom %.Add Ag with the amount that is less than or equal to 8 atom %, then produce effect improving on the recording sensitivity, particularly surpass when using under the situation of 5 atom % at the Ge atomic weight, effect is remarkable.But if the addition of Ag surpasses 8 atom %, then make the increase of beating, destroy the stability of noncrystalline mark, so undesirable.In addition, surpass 15 atom %, then be easy to generate segregation, so undesirable as if total addition with the Ge addition.As the amount of Ag, it would be desirable to be less than or equal to 5 atom %.
State after described first recording layer 4 and second recording layer, 10 film forming is noncrystalline normally.Therefore, after film forming, need whole crystallization of each recording layer and form initialized state (not recording status).As initial method, also can be based on the initialization of the annealing under the solid phase, in case but preferably based on making the recording layer fusion and the initialization of the so-called melting recrystallizationization of cools down and crystallization when solidifying again.Described each recording layer does not almost have the nuclear of crystalline growth after firm film forming, the crystallization under the solid is difficult, but according to melting recrystallizationization, carrying out fusion and make crystal growth after the nuclei of crystallization of minority form is main body, to recrystallize at a high speed.
Because the crystallization of first recording layer 4 and the melting recrystallization generation of second recording layer 10 is different with its reflectivity of crystallization that annealing under the solid phase produces, so if its mixing is then produced noise.So when record was rewritten in the covering of reality, deletion portion became the crystallization of melting recrystallization generation, so preferably initialization is also undertaken by melting recrystallizationization.
Based on the initialization of melting recrystallizationization the time, local and get final product with the short time fusion recording layer that is less than or equal to 1 millisecond of degree.Its reason is that melting time or cool time are long if melt region is big, and then with each damage layer, the plastic base surface deforms owing to heat.
Give be fit to initialized when being subjected to thermal process (ripe shoe Artworks), preferably with the high output semiconductor laser about wavelength 600～1000nm to major axis 100～300 μ m, minor axis 1～3 μ m optically focused and shine, short-axis direction is scanned as the linear velocity of scan axis with 1～10m/s.Even identical focused light, then melt region is excessive if approach circle, is easy to generate amorphous materialization again, and big to the damage of sandwich construction and substrate, undesirable.
At this, initialization is undertaken and can be confirmed as follows by melting recrystallizationization.That is, optically focused is become less than the some footpath of the about 1.5 μ m of diameter be used to the recording light of recording power Pw of recording layer fusion is shone with the medium of certain linear velocity direct current ground after this initialization.Having under the situation of gathering sill, carrying out with the state of following the tracks of servo-actuated and focusing servo-actuated to this groove or by the track that constitutes between groove.Then, if on same rail direct current irradiation deletion power P e (reflectivity of≤Pw) deletion light and the deletion state that obtains and the reflectivity of complete Unrecorded original state just can confirm that this init state is the melting recrystallization state much at one.Its reason is, recording layer by the recording light irradiation in case be melted and by the deletion rayed state of perfect recrystallizationization, passed through the fusion of recording light and the process that recrystallizes of deletion light, form the state of melting recrystallizationization.
In addition, roughly the same being meant of reflectivity (Rcry) of the reflectivity of init state (Rini) and melting recrystallization state, by (Rini-Rcry)/(Rini+Rcry)/the two reflection differences of 2} definition is less than or equal to 20%.Usually, it is desirable to only in solid phase crystallizations such as annealing, make its reflection differences bigger than 20%.
Described first recording layer 4 and second recording layer 10 are respectively as shown in Figure 1; forming first recording layer 4 is clipped between first protective seam 3 and second protective seam 5; second recording layer 10 is clipped in the structure between the 3rd protective seam 9 and the 4th protective seam 11, and is arranged on the surface (groove formation face) of first substrate 1.
(protective seam)
Described first protective seam 3 is effectively on the deterioration of first recording layer 4 that prevents to be caused by the high temperature in when record is rotten, and has the optical effect of adjusting reflectivity.
Described second protective seam 5 prevents first recording layer 4 and first reflection horizon 6 counterdiffusion mutually, suppresses 4 distortion of first recording layer, simultaneously, and with the function that heat is distributed to first reflection horizon 6 effectively.
The 3rd protective seam 9 of described second Information Level 200 has the function same with first protective seam 3, is effectively on the high temperature when preventing by record and the deterioration of second recording layer 10 that causes are rotten, and has the optical effect of adjusting reflectivity.
Described the 4th protective seam 11 has the function same with second protective seam 5, suppresses 10 distortion of second recording layer, and with the function that heat is distributed to second reflection horizon 12 effectively.
As the material of described first protective seam 3, second protective seam 5, the 3rd protective seam 9 and the 4th protective seam 11, be to note refractive index, temperature conductivity, chemical stability, physical strength, being adjacent to property etc. and decision.In general, can use the fluoride of transparent height and high-melting point metal and semi-conductive oxide, sulfide, nitride, carbonide or Ca, Mg, Li etc., the result that various materials are studied is, considered above-mentioned viewpoint and with the matching that constitutes first recording layer 4, second recording layer, 10 materials, ZnS and SiO 2Potpourri be optimal.But be not limited to this material, described oxide, sulfide, nitride, carbonide, fluoride not necessarily must adopt the composition of stoechiometry, and control is formed in order to control refractive index etc. or mix that to use also be effective.
The following describes the function of described protective seam etc.The layer structure of first information layer 100 of the present invention belongs to a kind of of the layer structure that be called the chilling structure.The layer structure of the cooling velocity of chilling structure when adopt promoting heat radiation and improving recording layer to solidify again, and the problem that recrystallizes when avoiding the noncrystalline mark to form realizes that simultaneously the height deletion of high speed crystallization is compared.
The film thickness of described first protective seam 3 and second protective seam 5 is less than or equal to 35nm, and 5～30nm is desirable.If described film thickness is less than 5nm, distortion during then by the recording layer fusion etc. and destroyed easily, and radiating effect is excessive, makes the record desired power unnecessarily become big.
The film thickness of described first protective seam 3 and second protective seam 5 has big influence for covering the permanance of rewriting repeatedly, also is important suppressing in the deterioration of beating particularly.If film thickness surpasses 35nm; then not only can not obtain the chilling structure; and when record becomes big in the recording layer side of protective seam and the temperature difference of first reflection horizon, 6 sides or first thermal diffusion layer 2, protective seam self distortion asymmetricly easily by the thermal expansion difference of protective seam both sides.Small plastic yield is put aside in this protective seam inside that then makes repeatedly, causes the increase of noise, and is undesirable.
If use above-mentioned this recording layer material, then can be less than or equal to and realize low beating in the high density recording of 0.5 μ m in the shortest mark lengths, the laser diode that uses the short wavelength in order to realize high density recording is when (for example wavelength is less than or equal to 700nm), even also should be noted that for the layer structure of described chilling structure.Particularly using wavelength to be less than or equal in 500nm, numerical aperture NA the discussion more than or equal to a branch of covering rewriting characteristic (1 PVC, one system ォ, one バ, one ラ ィ ト characteristic) of 0.55 so little optically focused light beam, recognize: make the Temperature Distribution planarization of mark width direction, it is important obtaining on high deletion ratio and the deletion power limit significantly.
This tendency also is same in the corresponding optical system of the DVD that uses the optical system about wavelength 630～680nm, NA=0.6.In having used the high density marker length modulated record of this optical system,, form its film thickness more than or equal to 5nm and to be less than or equal to 25nm be desirable especially with low the using of thermal conduction characteristic as protective seam.Under any circumstance, be the extra high material of temperature conductivity, can improve deletion ratio and deletion power limit by making first thermal diffusion layer 2 and first reflection horizon 6 that are provided with thereon.In big deletion power bracket, in order to bring into play the good deletion characteristic that described recording layer has, it is desirable to, can be not only single Temperature Distribution and the time with film thickness direction of use changes planarization, and can be with the Temperature Distribution of face direction (vertical direction of writing light beam direction of scanning) the layer structure of planarization as far as possible.
Among the present invention, by the layer structure of design information recording medium rightly,, attempt not carrying out fusion and amorphous materialization more thus with the Temperature Distribution planarization of carrier middle orbit transverse direction, widen the width that can recrystallize, and enlarge deletion rate and deletion power limit.On the other hand; promote from first recording layer 4 to high first reflection horizon, 6 heat radiations of temperature conductivity by the second low and extremely thin protective seam 5 of temperature conductivity; and promote that by the first low and extremely thin protective seam 3 of temperature conductivity first thermal diffusion layer 2 of high thermal conductivity dispels the heat to having more from first recording layer 4, it is smooth that the Temperature Distribution of first recording layer 4 just becomes.Even improve the temperature conductivity of first and second protective seam and promote its radiating effect, but if too promote heat radiation, then write down needed irradiation power and just uprise, promptly recording sensitivity obviously reduces.
In the present invention, the first low and thin protective seam 3 of temperature conductivity and second protective seam 5 have been it is desirable to use.By using low and thin first protective seam 3 and second protective seam 5 of temperature conductivity; in recording power irradiation several nsec～tens of nsec of the zero hour; to having given delay in time from of the heat conduction of first recording layer 4 to first thermal diffusion layer 2, first reflection horizon 6; can promote then to first thermal diffusion layer 2 and first reflection horizon 6 and and then to the heat radiation of second thermal diffusion layer 7, so can recording sensitivity be reduced too much.At present known with SiO 2, Ta 2O 5, Al 2O 3, AlN, SiN etc. are the protective layer material of principal ingredient, the temperature conductivity of himself is too high, is unfavorable with monomer whose as first protective seam 3 and second protective seam 5 of dual-layer phase-change information recording medium of the present invention therefore.
Described " having considered the super chilling structure of the heat conduction carryover effects of first protective seam 3 and second protective seam 5 " of the present invention is applicable on the described recording layer material, then with DVD-RAM etc. in the GeTe-Sb that uses 2Te 3Recording layer is compared more and is produced effect.This is because the crystalline growth during near described first recording layer 4 and second recording layer 10 solidifying again melt temperature (Tm) is the cause of the speed that recrystallizes.In order to be increased to the limit near the cooling velocity the melt temperature (Tm) and to make the formation at noncrystalline mark and edge thereof reliable and clear and definite, super chilling structure is effective, and the Temperature Distribution planarization of face direction, originally can near melt temperature (Tm), carry out deletion at a high speed, but it can guarantee the deletion that recrystallizes reliably before reaching higher deletion power.
As the material of described first protective seam 3 and second protective seam 5, the low material of thermal conduction characteristic preferably, its target is 1 * 10 -3PJ/ (μ mKnsec).But the temperature conductivity of directly measuring this low thermal conductivity material filminess is difficult, substitutes it, can obtain target according to the measurement result of thermal simulation and physical record sensitivity.
As first protective seam 3 of the low heat conductivity that brings desired result and the material of second protective seam 5, preferably contain from ZnS, ZnO, TaS 2With select in the terres rares sulfide at least a, its amount more than or equal to 50mol%, be less than or equal to 90mol%, and comprise fusing point or decomposition point compound dielectric more than or equal to 1000 ℃ heat-resisting compound.
Specifically, it is desirable to contain compound dielectric more than or equal to 60mol%, the La that is less than or equal to 90mol%, Ce, terres rares sulfide such as Nd, Y.Perhaps, it is desirable to make the compositing range of Zns, ZnO or terres rares sulfide is 70～90mol%.
As mix with them, fusing point or decomposition point be more than or equal to 1000 ℃ heat-resisting compound-material, for example can use the fluoride of oxide, nitride or the carbonide of Mg, Ca, Sr, Y, La, Ce, Ho, Er, Yb, Ti, Zr, Hf, V, Nb, Ta, Zn, Al, Si, Ge, Pb etc. and Ca, Mg, Li etc.Wherein particularly as the material that mixes with ZnS, SiO 2Be desirable.
The film thickness of described first protective seam 3 and second protective seam 5 then can not obtain the enough planarization effects of Temperature Distribution of mark width direction as if thicker than 30nm, so be less than or equal to 30nm for well, preferably is less than or equal to 25nm.On the other hand, less than 5nm, then the heat conduction carryover effects of protective seam portion is insufficient as if described film thickness, and recording sensitivity obviously reduces, and is undesirable.Therefore the ideal thickness of described first protective seam 3 and second protective seam 5 is to be 15nm～25nm when recording laser wavelength 600～700nm.When recording laser wavelength 350～600nm 5nm～20nm for well, 5～15nm preferably.
The film thickness d of the present invention's first protective seam 3 1(nm) with the film thickness d of second protective seam 5 2(nm) relation is d 1≤ d 2+ 5nm.If d 1Compare d 2+ 5nm is thick, and the heat when then writing down is rapidly to the heat radiation of reflection horizon side, so can not obtain the i.e. super chilling effect of first protective seam 3 of characteristics of the present invention.
In the present invention, first, second protective seam has all mixed ZnS and SiO as mentioned above 2, be set at identical materials like this, also be favourable aspect on making, reducing cost.
The following describes the 3rd protective seam 9 and the 4th protective seam 11 that constitute second Information Level 200.Second Information Level 200 also is preferably super chilling structure in order to realize high density recording.Therefore, the 4th protective seam 11 between second recording layer 10 and second reflection horizon 12 is preferably narrated such low material and film thickness of temperature conductivity in first protective seam 3, second protective seam 5.
Described the 3rd protective seam 9 uses in the art material known at present, but if is the material same with the 4th protective seam (for example with ZnS and SiO 2The material that mixes), also be favourable aspect then on making, reducing cost.The thickness of described the 3rd protective seam 9 is 30～200nm preferably, it is desirable to, and making becomes optimum reflectivity and carry out film thickness design in this scope.If described film thickness is less than 30nm, then because the heat during record and the recording layer distortion if surpass 200nm, then has the tendency that has problems on the property produced in batches.
(reflection horizon)
First reflection horizon 6 and second reflection horizon 12 have following function, promptly, use efficiently and inject light, improve cooling velocity and easy amorphous materialization etc., particularly in the promptly super chilling structure of characteristics of the present invention, the very high metal of temperature conductivity be can use, Au, Ag, Cu, W, Al, Ta etc. or their alloy etc. for example can be used.In addition, as adding element, can use Cr, Ti, Si, Pd, Ta, Nd, Zn etc.
Wherein, because Ag class material is also little in its refractive index of blue wavelength region, and can suppress light absorption less, so be desirable as the material in the reflection horizon of the first information layer that is used in the such dual-layer phase-change information recording medium of the present invention.
Various chemical vapour depositions can be passed through in described reflection horizon 6,12, and for example vacuum vapour deposition, sputtering method, plasma CVD method, optical cvd method, ion plating method, electron beam evaporation plating method wait and form.Be excellent at aspects such as the property produced in batches, film qualities wherein with sputtering method.
Described first information layer 100 is owing to needing high transmissivity, so refractive index is low and temperature conductivity is high Ag or its alloy are preferably used in first reflection horizon 6.The thickness in described first reflection horizon 6 is 3～20nm preferably.If less than 3nm, then be difficult to make the even and fine and close film of thickness, if surpass 20nm, then transmissivity reduces, it is difficult that the record-playback of second Information Level 200 becomes.
The film thickness that constitutes second reflection horizon 12 of second Information Level 200 it is desirable to 50～300nm, preferably 80～150nm.If described film thickness is less than 50nm, even then pure Ag, if thermal diffusion layer is not set thereon again, its radiating effect also can be insufficient for super chilling structure, if surpass 300nm, then compared with horizontal direction, heat more leaves to vertical direction, and the heat distribution that is helpless to horizontal direction improves, and the thermal capacity in second reflection horizon 12 itself is big, instead can make the cooling velocity of second recording layer 10 slack-off, in addition, the flatness of film surface microscopic is variation also.
Dual-layer phase-change information recording medium of the present invention also can be selected one in second restraining barrier 15 and carried out at least first restraining barrier 14 being set between second protective seam 5 and first reflection horizon 6 and being provided with between the 4th protective seam 11 and second reflection horizon 12.As described reflection horizon, Ag alloy preferably, as protective seam, preferably ZnS and SiO 2Potpourri, but under the situation of reflection horizon and restraining barrier adjacency, the sulphur in the protective seam might be with the Ag corrosion in reflection horizon, make to preserve reliability and reduce.
In order to eliminate this unfavorable condition, use in the reflection horizon under the situation of Ag class, the restraining barrier preferably is set.This restraining barrier does not contain sulphur, and fusing point need be higher than recording layer, can enumerate specifically: SiO 2, ZnO, SnO 2, Al 2O 3, TiO 2, In 2O 3, MgO, ZrO 2Deng metal oxide, Si 3N 4, nitride, SiC, TaC, B such as AIN, TiN, ZrN 4Carbonide or their potpourris such as C, WC, TiC, ZrC.These restraining barriers are little of well to the absorptivity of optical maser wavelength.
Various chemical vapour depositions can be passed through in described restraining barrier 14,15, and for example vacuum vapour deposition, sputtering method, plasma CVD method, optical cvd method, ion plating method, electron beam evaporation plating method wait and form.Be excellent at aspects such as the property produced in batches, film qualities wherein with sputtering method.
The film thickness on described restraining barrier 14,15 is 2～10nm preferably.If described film thickness then can not be prevented the effect of Ag corrosion less than 2nm, makes to preserve the reliability reduction, if surpass 10nm, then can not obtain the chilling structure, and transmissivity is reduced.
(thermal diffusion layer)
The purpose that is provided with of described thermal diffusion layer (first thermal diffusion layer 2, second thermal diffusion layer 7) is that the thermal diffusion that is provided with thinly for the transmissivity that improves first information layer 100 the reflection horizon is assisted.Particularly, by it being arranged between first substrate 1 and first protective seam 3 and between first reflection horizon 6 and the middle layer 8 and can guarantee super chilling structure.
As described thermal diffusion layer 2,7 properties of materials, wish the big of its thermal conductivity ratio first protective seam 3 and second protective seam 5.Temperature conductivity by making first thermal diffusion layer 2 has guaranteed to consider the super chilling structure of protective seam heat conduction carryover effects greater than first protective seam 3, improves the deletion ratio, and improves to cover and rewrite characteristic.In addition, the temperature conductivity by making second thermal diffusion layer 7 can be replenished the thermal diffusion effect in the first thin reflection horizon 6 greater than second protective seam 5, can guarantee super chilling structure.
In order to make the second inboard Information Level 200 carry out record-playback, wish that its absorptivity to optical maser wavelength is little.For the optical maser wavelength of using in information record reproducing, its extinction coefficient is less than or equal to 0.5 for well, preferably is less than or equal to 0.3.If described extinction coefficient is than 0.5 big, and then the absorptivity of first information layer increases, and makes the record-playback of second Information Level 200 difficulty that becomes.
As the material that satisfies these characteristics, can enumerate the oxide of expression electrical conductivity.For example can use In 2O 3, SnO 2, ZnO, CdO, TiO 2, CdIn 2O 4, Cd 2SnO 2, Zn 2SnO 4Deng.Wherein, ITO (In 2O 3-SnO 2) and IZO (In 2O 3-ZnO) be high heat conduction, be desirable as the thermal diffusion layer material.They can use by monomer, also can mix use.
The film thickness of described first thermal diffusion layer 2 and second thermal diffusion layer 7 it is desirable to 10～200nm more than or equal to 10nm.If described film thickness then can not obtain radiating effect less than 10nm, if surpass 200nm, then stress becomes big, and not only recording characteristic reduces repeatedly, and also has problems on the property produced in batches.
The first information layer 100 of dual-layer phase-change information recording medium of the present invention, its at record and the light transmission of the optical maser wavelength of using in reproducing be 40～70% for well, preferably 45～60%.If described light transmission is less than 40%, and then the record-playback of second Information Level becomes difficult, if surpass 70%, the recording sensitivity reduction and the reflectivity of first information layer is reduced.
(manufacture methods of dual-layer phase-change information recording medium)
The manufacture method of dual-layer phase-change information recording medium of the present invention, its first mode comprises film formation process, initialization operation, is adjacent to operation, carries out each operation in proper order according to this basically.Fig. 3 is by the summary section of the dual-layer phase-change information recording medium of this method manufacturing, forms groove on first substrate 1 and second substrate 13.
As described film formation process, carry out following making respectively: on the face that is provided with groove of first substrate 1, form first information layer 100; On the face that is provided with groove of second substrate 13, form second Information Level 200.
Constitute each layer of the described first information layer 100 and second Information Level 200 respectively, can pass through various chemical vapour depositions, for example vacuum vapour deposition, sputtering method, plasma CVD method, optical cvd method, ion plating method, electron beam evaporation plating method wait and form.Wherein, be excellent with sputtering method at aspects such as the property produced in batches, film qualities.Sputtering method generally is to carry out film forming while inert gas flows such as making argon, Yi Bian but at this moment also can on one side oxygen, nitrogen etc. be sneaked into and carry out reactive sputtering.
As described initialization operation, the first information layer 100 and second Information Level 200 are carried out initialization by penetrating laser homenergic light with whole face, that is, make the recording layer crystallization.
When carrying out described initialization operation under the situation that film is floated come, apply UV resin etc. and irradiation ultraviolet radiation makes its curing also can on the first information layer and second Information Level, rotating before the initialization operation, implement external coating (ォ one バ one コ one ト).In addition, also can carry out the initialization of the first information layer and second Information Level from first substrate-side with next be adjacent to after operation carries out earlier.
Then, initialized with as above having carried out like that, at the first information layer 100 that forms on the face of first substrate 1 and second Information Level 200 that on the face of second substrate 13, forms, make first information layer 100 relative with second Information Level 200 and clip middle layer 8 and fit.The uv curing resin rotation that for example will become the middle layer is coated on the face of either side, makes face pressurize and it is adjacent to two substrates relatively mutually, and irradiation ultraviolet radiation can make resin solidification on this basis.
The manufacture method of dual-layer phase-change information recording medium of the present invention, its second mode comprises: first film formation process, middle layer form operation, second film formation process, baseplate-laminating operation and initialization operation, are to carry out each operation in proper order according to this basically.Fig. 4 is by the summary section of the dual-layer phase-change information recording medium of this method manufacturing, forms groove on the middle layer 8 and second substrate 13.
Described first film formation process is the operation of second Information Level 200 being carried out film forming on the face that is provided with gathering sill on second substrate 13.Film build method as previously mentioned.
It is that the middle layer 8 that will have gathering sill is formed on the operation on second Information Level 200 that described middle layer forms operation.For example, comprehensive coating uv curing resin on second Information Level 200, irradiation ultraviolet radiation makes its curing under to the state of being pushed by the grand master pattern of the ultraviolet material of transmissive, can form groove.
Described second film formation process is the operation of first information layer 100 being carried out film forming on middle layer 8.Film build method as previously mentioned.
Described baseplate-laminating operation is that the first information layer 100 and first substrate 1 are clipped the operation that hyaline layer 16 is fitted.For example can be that uv curing resin rotation is coated on the first information layer 100 or on first substrate 1 with the material of hyaline layer 16, irradiation ultraviolet radiation be solidified to form it after first information layer 100 and first substrate 1 are fitted.Also can not form hyaline layer 16, be that resin is coated on the first information layer 100 with the material of first substrate 1, is solidified to form first substrate 1 by making it.
Described initialization operation is with whole initialization, that is, to make the recording layer crystallization by penetrating laser homenergic light from the relative first information layer 100 of first substrate, 1 side and second Information Level 200.In addition, for second Information Level 200, even after the middle layer forms operation, carry out initialization, also without any problem at once.
(recording and playback method)
Recording and playback method of the present invention is each Information Level to described dual-layer phase-change information recording medium of the present invention, and the light beam of injecting wavelength 350～700nm from first information layer side carries out recording of information and reproduction.
Specifically, optical recording media is rotated with the linear velocity of regulation or the fixed angular speed of regulation, shines semiconductor laser recording light such as (for example oscillation wavelengths of wavelength 350～700nm) from first substrate-side via object lens simultaneously.Because this irradiates light, recording layer absorb this light and local temperature are risen, and for example, form amorphous mark and come recorded information.The reproduction of Ji Lu information as described above, while can by make optical recording media with the alignment speed rotation of regulation from the first substrate-side irradiating laser, and detect that its reflected light carries out.
Embodiment
Embodiments of the invention below are described, but the present invention is not subjected to any qualification of these embodiment.
(embodiment 1)
(making of dual-layer phase-change information recording medium)
At first prepare first substrate of the polycarbonate resin of radius 120mm, thickness 0.58mm, have the concavo-convex gathering sill of spacing 0.43 μ m, groove depth 38nm on its surface.
Use individual layer sputter equipment (Mei Leaf ス パ ッ device then: Balzers society system) utilize the magnetron sputtering method will be on first substrate by IZO (In 2O 3-10 quality %ZnO) the first thermal diffusion layer film forming of Gou Chenging is the thickness of 60nm.On first thermal diffusion layer, utilize the magnetron sputtering method will be by ZnS-20mol%SiO 2The first protective seam film forming that constitutes is the thickness of 10nm.
On first protective seam, utilize the magnetron sputtering method will be by Ge 5Ag 1In 2Sb 70Te 22The first recording layer film forming that constitutes is the thickness of 6nm.On first recording layer, utilize the magnetron sputtering method will be by ZnS-20mol%SiO 2The second protective seam film forming that constitutes is the thickness of 10nm.The first reflection horizon film forming of utilizing magnetron sputtering method to be made of Ag-3 quality %Zn-2 quality %Al on second protective seam is the thickness of 10nm.On first reflection horizon, utilize the magnetron sputtering method will be by IZO (In 2O 3-10 quality %ZnO) the second thermal diffusion layer film forming of Gou Chenging is the thickness of 70nm.Make first information layer like this.
Similarly, prepare second substrate of the polycarbonate resin of radius 120mm, thickness 0.58mm, it has the concavo-convex gathering sill of spacing 0.43 μ m, groove depth 38nm.Use individual layer sputter equipment (Mei Leaf ス パ ッ device: Balzers society system) utilize the second reflection horizon film forming that magnetron sputtering method will be made of Al-3at%Ti thickness on second substrate as 80nm.On second reflection horizon, utilize the magnetron sputtering method will be by ZnS-20mol%SiO 2The 4th protective seam film forming that constitutes is the thickness of 20nm.On the 4th protective seam, utilize the magnetron sputtering method will be by Ge 5Ag 1In 2Sb 70Te 22The second recording layer film forming that constitutes is the thickness of 12nm.On second recording layer, utilize the magnetron sputtering method will be by ZnS-20mol%SiO 2The 3rd protective seam film forming that constitutes is the thickness of 70nm.Make second Information Level like this.
Then, the first information layer and second Information Level of made carry out initialization process from first substrate-side and the second Information Level face side irradiating laser respectively relatively.At this, use spectrophotometer (SHIMADZU society system) to measure the light transmission of first information layer under wavelength 407nm from first substrate-side.
Then, the coating liquid that will contain uv curing resin (Nippon Kayaku K. K's system, DVD003) by rotary coating is coated on the face of first information layer, and the second information aspect side of second substrate fitted, solidify from the first substrate-side irradiation ultraviolet radiation light and with uv curing resin, form the middle layer of thickness 35 μ m.Make the dual-layer phase-change information recording medium that lamination successively has first substrate, first information layer, middle layer, second Information Level and second substrate like this.
＜performance evaluation 〉
It is that 0.65 optical system is shone the optically focused light beam that the dual-layer phase-change information recording medium that obtain are used the numerical aperture of wavelength 407nm, object lens, carry out record under the condition of on-line velocity 6.0m/s, 0.180 μ m/bit, measurement is initially beated, is covered revised beating and recording sensitivity (can obtain the power that minimum is beated) 100 times.Its result is illustrated in table 1.
For first information layer, be less than or equal to 9% beat being less than or equal under the power of 13mW to produce, cover that to rewrite characteristic also good.Relative second Information Level also carries out record with same condition, and the result of evaluation is less than or equal to 9% beat being less than or equal under the power of 13mW to produce, and covers that to rewrite characteristic also good.
Measure the ZnS-20mol%SiO that in first protective seam and second protective seam, uses then 2With the IZO (In that in first thermal diffusion layer and second thermal diffusion layer, uses 2O 3-10 quality %ZnO) temperature conductivity.
At this, the measuring method of temperature conductivity is the thickness difference monofilm ground film forming with 1000nm on glass at thickness 30 μ m, utilizes the LASER HEATING method to ask for.ZnS-20mol%SiO 2Be 0.50W/mK, IZO (In 2O 3-10 quality %ZnO) be 4.3W/mK, the thermal conductivity ratio that constitutes first thermal diffusion layer and second thermal diffusion layer as can be known constitutes the temperature conductivity height of the material of first protective seam and second protective seam.
(embodiment 2)
(making of dual-layer phase-change information recording medium)
Except the film thickness of first thermal diffusion layer of first information layer among the embodiment 1 is changed into 50nm; the film thickness of first protective seam is changed into 20nm; the film thickness of second protective seam is changed into outside the 15nm, made the dual-layer phase-change information recording medium similarly to Example 1.
(embodiment 3)
(making of dual-layer phase-change information recording medium)
Except the film thickness of first thermal diffusion layer of first information layer among the embodiment 1 is changed into 50nm; the film thickness of first protective seam is changed into 20nm; the film thickness of second protective seam is changed into 20nm and the film thickness of second thermal diffusion layer is changed into outside the 75nm, make the dual-layer phase-change information recording medium similarly to Example 1.
(embodiment 4)
(making of dual-layer phase-change information recording medium)
Except the film thickness of first thermal diffusion layer of first information layer among the embodiment 1 is changed into 40nm; the film thickness of first protective seam is changed into 30nm; the film thickness of second protective seam is changed into 25nm and the film thickness of second thermal diffusion layer is changed into outside the 75nm, make the dual-layer phase-change information recording medium similarly to Example 1.
(embodiment 5)
(making of dual-layer phase-change information recording medium)
Except the film thickness of first thermal diffusion layer of first information layer among the embodiment 1 is changed into 40nm; the film thickness of first protective seam is changed into 30nm; the film thickness of second protective seam is changed into 30nm and the film thickness of second thermal diffusion layer is changed into outside the 80nm, make the dual-layer phase-change information recording medium similarly to Example 1.
(embodiment 6)
(making of dual-layer phase-change information recording medium)
Except the film thickness of first thermal diffusion layer of first information layer among the embodiment 1 is changed into 60nm; the film thickness of second protective seam is changed into 20nm and the film thickness of second thermal diffusion layer is changed into outside the 75nm, make the dual-layer phase-change information recording medium similarly to Example 1.
(embodiment 7)
(making of dual-layer phase-change information recording medium)
Except the film thickness of second protective seam of first information layer among the embodiment 1 is changed into 30nm, the film thickness of second thermal diffusion layer is changed into outside the 80nm, make the dual-layer phase-change information recording medium similarly to Example 1.
(comparative example 1)
(making of dual-layer phase-change information recording medium)
Except the film thickness of first thermal diffusion layer of first information layer among the embodiment 1 is changed into 50nm, the film thickness of first protective seam is changed into outside the 20nm, make the dual-layer phase-change information recording medium similarly to Example 1.
(comparative example 2)
(making of dual-layer phase-change information recording medium)
Except the film thickness of first thermal diffusion layer of first information layer among the embodiment 1 is changed into 40nm, the film thickness of first protective seam is changed into outside the 30nm, make the dual-layer phase-change information recording medium similarly to Example 1.
(comparative example 3)
(making of dual-layer phase-change information recording medium)
Except the film thickness of first thermal diffusion layer of first information layer among the embodiment 1 is changed into 30nm; the film thickness of first protective seam is changed into 40nm; the film thickness of second protective seam is changed into 40nm and the film thickness of second thermal diffusion layer is changed into outside the 80nm, make the dual-layer phase-change information recording medium similarly to Example 1.
(comparative example 4)
(making of dual-layer phase-change information recording medium)
Except the film thickness of second protective seam of first information layer among the embodiment 1 is changed into 40nm, the film thickness of second thermal diffusion layer is changed into outside the 80nm, make the dual-layer phase-change information recording medium similarly to Example 1.
(comparative example 5)
(making of dual-layer phase-change information recording medium)
Except the film thickness of second thermal diffusion layer of first information layer among the embodiment 1 is changed into the 5nm, make the dual-layer phase-change information recording medium similarly to Example 1.
(comparative example 6)
(making of dual-layer phase-change information recording medium)
Except the film thickness of first thermal diffusion layer of first information layer among the embodiment 1 is changed into 5nm; the film thickness of first protective seam is changed into 20nm; the film thickness of second protective seam is changed into outside the 15nm, made the dual-layer phase-change information recording medium similarly to Example 1.
＜performance evaluation 〉
Then, resulting embodiment 2～7 and comparative example 1～6 are carried out record, deletion and the reproduction experiment of first information layer similarly to Example 1.Its result is illustrated in table 1.
(table 1)
The film thickness of first thermal diffusion layer [nm] The film thickness of first protective seam [nm] The film thickness of second protective seam [nm] The film thickness of second thermal diffusion layer [nm] The transmissivity of first information layer Initially beat Cover revised beating 100 times Can obtain the recording power that minimum is beated
Embodiment 1 60 10 10 70 47％ 8.0％ 8.5％ 12.6mW
Embodiment 2 50 20 15 70 47％ 7.6％ 8.0％ 12.0mW
Embodiment 3 50 20 20 75 48％ 7.4％ 7.9％ 12.6mW
Embodiment 4 40 30 25 75 47％ 7.7％ 8.3％ 12.0mW
Embodiment 5 40 30 30 80 46％ 8.0％ 8.8％ 11.8mW
Embodiment 6 60 10 20 75 47％ 7.4％ 7.9％ 12.4mW
Embodiment 7 60 10 30 80 45％ 8.0％ 8.4％ 12.1mW
Comparative example 1 50 20 10 70 48％ 7.6％ 8.8％ 14.2mW
Comparative example 2 40 30 10 70 45％ 8.6％ 9.0％ 14.5mW
Comparative example 3 30 40 40 80 45％ 8.0％ 10.2％ 12.0mW
Comparative example 4 60 10 40 80 46％ 7.5％ 9.6％ 12.4mW
Comparative example 5 60 10 10 5 49％ 10.6％ 16.4％ ≥15mW
Comparative example 6 5 20 15 70 41％ 7.4％ 14.6％ 12.3mW
According to the result of table 1, from recording sensitivity with cover to rewrite the characteristic aspect, think that it is desirable that the film thickness of first protective seam and second protective seam is less than or equal to 30nm.Think the film thickness d of first protective seam 1Film thickness d with second protective seam 2Be d 1≤ d 2The relation of+5nm then can obtain the recording power that minimum beats and be less than or equal to 13mW, and its recording sensitivity is good.
If the thickness of thermal diffusion layer is thin excessively, then cover the revised surge of beating.Hence one can see that, and the thickness of thermal diffusion layer is preferably more than or equal to 10nm.Sampling at other has a fling in the experiment, is provided with thermal diffusion layer more than or equal to 200nm, and consequently the warpage of dish increases, and can not stably follow the tracks of.
First and second protective layer material for first information layer uses ZnS-30mol%SiO 2, the material of first and second thermal diffusion layer uses ITO (In 2O 3-10 quality %Sn O 2) and Sn O 2Optical information recording media, attempt its recording sensitivity of investigation and cover rewriting characteristic, obtain respectively and ZnS-20mol%SiO 2, IZO (In 2O 3-10 quality %ZnO) the same result of situation.
In addition, the temperature conductivity of material under thickness 1000nm separately measured, consequently ZnS-30mol%SiO 2Be 0.48W/mK, ITO is 3.6W/mK, SnO 2Be 3.2W/mK, can confirm the temperature conductivity height of the thermal conductivity ratio protective seam of thermal diffusion layer.
(embodiment 8)
(making of dual-layer phase-change information recording medium)
Except the film thickness with first protective seam of first information layer among the embodiment 1 and second protective seam changes to 15nm respectively, the film thickness of first thermal diffusion layer is changed to 55nm, the film thickness of second thermal diffusion layer is changed to 100nm, the film thickness of first recording layer is changed to respectively the scope of such 2～14nm shown in the table 2, other make the dual-layer phase-change information recording medium similarly to Example 1.
＜performance evaluation 〉
To each the dual-layer phase-change information recording medium that obtains, under condition similarly to Example 1, estimate its recording characteristic.The result is illustrated in table 2.
[table 2]
The film thickness of first recording layer (nm) 2 3 4 8 10 12 14
Be increased to 3% number of times by covering to rewrite to make to beat 1 100 200 500 500 300 300
The thickness of first recording layer is thick more, and then the light transmission of first information layer is just low more.As can be known if will to make the light transmission of first information layer be 40%, then the film thickness of first recording layer of first information layer is less than or equal to 15nm for well.If the transmissivity of first information layer is littler than 40%, then second Information Level is difficult to carry out good record and reproduction.
Think that the covering of the record of first information layer and deletion rewrites the recording layer film thickness that characteristic relies on first information layer strongly.
According to the result of table 2, think the recording layer film thickness of first information layer more than or equal to 3nm for well.
(making of dual-layer phase-change information recording medium)
(embodiment 9)
Compare with embodiment 1, except using Ag in first reflection horizon, between second protective seam and first reflection horizon, other the dual-layer phase-change information recording of making similarly to Example 1 medium being set the SiC of film thickness 3nm as the restraining barrier.
(making of dual-layer phase-change information recording medium)
(embodiment 10)
Compare with embodiment 1, except using Ag in first reflection horizon, other make the dual-layer phase-change information recording medium similarly to Example 1.
＜performance evaluation 〉
To each dual-layer phase-change information recording medium of embodiment 9 and embodiment 10, under condition similarly to Example 1, carry out record below, measure the beating of 3T reproducing signal of first information layer.In addition, in order to investigate the preservation reliability, each sample that will write down at the initial stage is preserved beating of the 3T reproducing signal of measuring the initial stage record mark after 300 hours again with 80 ℃-85%RH.Its result is illustrated in table 3.
[table 3]
The restraining barrier Beating before preserving Beating after the preservation
Embodiment
9 Have 7.7％ 8.3％
Embodiment
10 Do not have 7.8％ 12.7％
As shown in Table 3, be provided with the embodiment 9 on restraining barrier under the situation of first reflection horizon use Ag, beating after it is preserved is also good, is good as CD.And beating before embodiment 10 preservations is good, but beating and can not measure after preserving.
Think according to above situation, use sulfureted material in upper protective layer, use under the situation of Ag in the reflection horizon, and it is desirable in order to improve the preservation reliability restraining barrier being set.
(embodiment 11)
(making of dual-layer phase-change information recording medium)
At first, prepare second substrate of the polycarbonate resin of radius 120mm, thickness 1.1mm, its surface has the concavo-convex gathering sill of spacing 0.35 μ m, groove depth 38nm.
Use individual layer sputter equipment (Balzers society system) to utilize the second reflection horizon film forming that magnetron sputtering method will be made of Al-3at%Ti thickness then on second substrate as 80nm.On second reflection horizon, utilize the magnetron sputtering method will be by ZnS-20mol%SiO 2The 4th protective seam film forming that constitutes is the thickness of 20nm.On the 4th protective seam, utilize the magnetron sputtering method will be by Ge 5Ag 1In 2Sb 70Te 22The second recording layer film forming that constitutes is the thickness of 12nm.On second recording layer, utilize the magnetron sputtering method will be by ZnS-20mol%SiO 2The 3rd protective seam film forming that constitutes is the thickness of 70nm.Make second Information Level thus.
The coating liquid that will contain uv curing resin (Nippon Kayaku K. K's system, DVD003) is coated on the 3rd protective seam of second Information Level of made, utilizes 2P (photopolymerization) method to form the concavo-convex middle layer of tracking guiding that having of thickness 30 μ m is made of spacing 0.32 μ m, groove depth 38nm succeeding vat.
Use individual layer sputter equipment (Balzers society system) to utilize the magnetron sputtering method will be on described middle layer then by IZO (In 2O 3-10 quality %ZnO) the second thermal diffusion layer film forming of Gou Chenging is the thickness of 70nm.The first reflection horizon film forming of utilizing magnetron sputtering method to be made of Ag-3 quality %Zn-2 quality %Al on second thermal diffusion layer is the thickness of 10nm.On first reflection horizon, utilize the magnetron sputtering method will be by ZnS-20mol%SiO 2The second protective seam film forming that constitutes is the thickness of 10nm.On second protective seam, utilize the magnetron sputtering method will be by Ge 5Ag 1In 2Sb 70Te 22The first recording layer film forming that constitutes is the thickness of 6nm.On first recording layer, utilize the magnetron sputtering method will be by ZnS-20mol%SiO 2The first protective seam film forming that constitutes is the thickness of 10nm.On first protective seam, utilize the magnetron sputtering method will be by IZO (In 2O 3-10 quality %ZnO) the first thermal diffusion layer film forming of Gou Chenging is the thickness of 80nm.Make first information layer thus.
Then via the hyaline layer that is made of double-sided adhesive sheet of 45 μ m thickness, first baseplate-laminating that the film by polycarbonate resin of diameter 12cm, thickness 50 μ m is constituted is made the dual-layer phase-change information recording medium on the face of first information layer.
In addition,,, first information layer, hyaline layer and first substrate are set similarly on the substrate of thickness 1.1mm, measure light transmission from first substrate-side in order to measure transmissivity with above-mentioned different.Transmissivity after the first information layer initialization of present embodiment is 49%.
＜performance evaluation 〉
Use the optical system of the numerical aperture 0.85 of wavelength 407nm, object lens to shine the optically focused light beam to the dual-layer phase-change information recording medium of making, carry out record under the condition of on-line velocity 6.5m/s, 0.160 μ m/bit, measurement is initially beated, is covered revised beating and recording sensitivity (can obtain the power that minimum is beated) 100 times, the result is, for first information layer, be less than or equal to 7% beat being less than or equal under the power of 10mW to produce, cover that to rewrite characteristic also good.Also carry out record with same condition for second Information Level, the result of evaluation is less than or equal to 9% beat being less than or equal under the power of 10mW to produce, and covers that to rewrite characteristic also good.
Studying experiment and can confirm according to other: also can carry out record-playback well on second Information Level when carrying out record-playback in the optical system of numerical aperture 0.85, the transmissivity of first information layer need be more than or equal to 40%.
Can think thus: even dual-layer phase-change information recording medium of the present invention are under the situation that the numerical aperture NA of the object lens that carry out record-playback changes, by scope the thickness of first substrate is adjusted, also can be carried out record-playback well at 10～600 μ m.
In addition, according to other the experimental result that studies, if the recording layer film thickness of first information layer is in 3～15nm scope, the reflection horizon film thickness is in 3～20nm scope, the thermal diffusion layer film thickness is in 10～200nm scope, and then the first information layer and second Information Level can both carry out record-playback well.
(embodiment 12)
(making of dual-layer phase-change information recording medium)
At first prepare first substrate of the polycarbonate resin of radius 120mm, thickness 0.58mm, have the concavo-convex gathering sill of spacing 0.74 μ m, groove depth 33nm on its surface.
Use individual layer sputter equipment (Balzers society system) to utilize the magnetron sputtering method will be on first substrate then by IZO (In 2O 3-10 quality %ZnO) the first thermal diffusion layer film forming of Gou Chenging is the thickness of 40nm.On first thermal diffusion layer, utilize the magnetron sputtering method will be by ZnS-20mol%SiO 2The first protective seam film forming that constitutes is the thickness of 10nm.On first protective seam, utilize the magnetron sputtering method will be by Ge 5Ag 2In 3Sb 68Te 22The first recording layer film forming that constitutes is the thickness of 6nm.On first recording layer, utilize the magnetron sputtering method will be by ZnS-20mol%SiO 2The second protective seam film forming that constitutes is the thickness of 10nm.The first reflection horizon film forming of utilizing magnetron sputtering method to be made of Ag-3 quality %Zn-2 quality %Al on second protective seam is the thickness of 10nm.On first reflection horizon, utilize the magnetron sputtering method will be by IZO (In 2O 3-10 quality %ZnO) the second thermal diffusion layer film forming of Gou Chenging is the thickness of 100nm.Make first information layer thus.
Then, prepare second substrate of the polycarbonate resin of radius 120mm, thickness 0.58mm, it has the concavo-convex gathering sill of spacing 0.75 μ m, groove depth 33nm.Use individual layer sputter equipment (Balzers society system) to utilize the second reflection horizon film forming that magnetron sputtering method will be made of Al-3at%Ti thickness on second substrate as 80nm.On second reflection horizon, utilize the magnetron sputtering method will be by ZnS-20mol%SiO 2The 4th protective seam film forming that constitutes is the thickness of 20nm.On the 4th protective seam, utilize the magnetron sputtering method will be by Ge 5Ag 2In 3Sb 68Te 22The second recording layer film forming that constitutes is the thickness of 12nm.On second recording layer, utilize the magnetron sputtering method will be by ZnS-20mol%SiO 2The 3rd protective seam film forming that constitutes is the thickness of 80nm.Make second Information Level thus.
Then, first information layer and second Information Level respectively from first substrate-side and the second Information Level face side irradiating laser, are carried out initialization process.At this, use spectrophotometer (SHIMADZU society system) to measure the light transmission of first information layer under wavelength 660nm from first substrate-side, consequently 45%.
The uv curing resin (middle layer) of the epoxies thickness with 50 μ m is coated on the first information layer, then first information layer and second Information Level are relatively placed and carried out irradiation ultraviolet radiation, like this that first substrate, first information layer, middle layer, second Information Level and second substrate is arranged side by side successively, make the dual-layer phase-change information recording medium.
＜performance evaluation 〉
It is that 0.65 optical system is shone the optically focused light beam that the dual-layer phase-change information recording medium of making are used the numerical aperture of wavelength 660nm, object lens, carry out record under the condition of on-line velocity 3.5m/s, 0.267 μ m/bit, measurement is initially beated, is covered revised beating and recording sensitivity (can obtain the power that minimum is beated) 100 times, consequently, for first information layer, be less than or equal to 9% beat being less than or equal under the power of 28mW to produce, cover that to rewrite characteristic also good.Also write down, estimate for second Information Level, consequently be less than or equal to 9% beat being less than or equal under the power of 28mW to produce, cover that to rewrite characteristic also good with same condition.
Utilizability on the industry
Dual-layer phase-change information recording media of the present invention, it covers rewrites characteristic good, particularly also can high density rewrite using in the situation of bluish violet color laser, can use widely such as in the Blu-ray Disk system of CD-RW, DVD+RW, DVD-RW, DVD-RAM, use bluish violet color laser etc.

Claims (20)

1; a kind of dual-layer phase-change information recording medium; has first substrate; second substrate; and between this first substrate and this second substrate, has first information layer at least successively; the middle layer and second Information Level; laser is injected from described first substrate-side and is carried out at least a of recording of information and reproduction; it is characterized in that; described first information layer has first thermal diffusion layer at least successively; first protective seam; first recording layer; second protective seam; first reflection horizon and second thermal diffusion layer; the film thickness of described first protective seam and second protective seam all is less than or equal to 35nm; the film thickness of described first thermal diffusion layer and second thermal diffusion layer is all more than or equal to 10nm, and the film thickness d of described first protective seam 1Film thickness d with described second protective seam 2Satisfy following formula d 1≤ d 2The relation of+5nm, d 1And d 2Unit be nm.
2, dual-layer phase-change information recording medium as claimed in claim 1, wherein, the temperature conductivity of first thermal diffusion layer and the second thermal diffusion layer all temperature conductivity than described first protective seam and second protective seam is big.
3, dual-layer phase-change information recording medium as claimed in claim 1, wherein, first protective seam and second protective seam all are to comprise from ZnS, ZnO, TaS more than or equal to 50mol%, the amount that is less than or equal to 90mol% 2And select in the terres rares sulfide at least a, and first protective seam and second protective seam all comprise fusing point or the decomposition point compound dielectric more than or equal to 1000 ℃ heat-resisting compound.
4, dual-layer phase-change information recording medium as claimed in claim 3, wherein, fusing point or decomposition point are to select oxide, nitride and the carbonide of element and select in the fluoride of element any from Mg, Ca, Sr, Y, La, Ce, Ho, Er, Yb, Ti, Zr, Hf, V, Nb, Ta, Zn, Al, Si, Ge, Pb from Ca, Mg, Li more than or equal to 1000 ℃ heat-resisting compound.
5, dual-layer phase-change information recording medium as claimed in claim 4, wherein, first protective seam and second protective seam all comprise ZnS and SiO 2
6, dual-layer phase-change information recording medium as claimed in claim 1, wherein, at least one of first protective seam and second protective seam contains ZnS, and at least one of first thermal diffusion layer and second thermal diffusion layer contains the oxide that shows electrical conductivity.
7, dual-layer phase-change information recording medium as claimed in claim 1, wherein, at least one of first thermal diffusion layer and second thermal diffusion layer contains any of indium oxide that has added zinc paste and the indium oxide that has added tin oxide.
8, dual-layer phase-change information recording medium as claimed in claim 1, wherein, the film thickness of first protective seam and second protective seam all is 5～30nm.
9, dual-layer phase-change information recording medium as claimed in claim 8, wherein, the film thickness of first protective seam and second protective seam all is 5～25nm.
10, dual-layer phase-change information recording medium as claimed in claim 1, wherein, the film thickness of first thermal diffusion layer and second thermal diffusion layer all is 10～200nm.
11, dual-layer phase-change information recording medium as claimed in claim 1, wherein, first recording layer contains Sb and Te, also contains select from Ag, In, Ge, Sn, Al, Ta, V, Co, Zr, Ga, Si, Nb, Cr, Pt, Pb, S, N, O at least a.
12, dual-layer phase-change information recording medium as claimed in claim 1, wherein, the film thickness of first recording layer is 3～15nm.
13, dual-layer phase-change information recording medium as claimed in claim 1, wherein, select at least a contained in first reflection horizon from Au, Ag, Cu, W, Al, Ta.
14, dual-layer phase-change information recording medium as claimed in claim 1, wherein, the film thickness in first reflection horizon is 3～20nm.
15, dual-layer phase-change information recording medium as claimed in claim 1, wherein, for the light of wavelength 350～700nm, the light transmission of first information layer is 40～70%.
16, dual-layer phase-change information recording medium as claimed in claim 1 wherein, have hyaline layer between first substrate and first thermal diffusion layer.
17, dual-layer phase-change information recording medium as claimed in claim 1 wherein, have first restraining barrier between second protective seam and first reflection horizon.
18, dual-layer phase-change information recording medium as claimed in claim 17, wherein, Ag is contained in first reflection horizon.
19, dual-layer phase-change information recording medium as claimed in claim 1, wherein, the thickness of first substrate is 10～600 μ m.
20, a kind of recording and playback method of dual-layer phase-change information recording medium, it is characterized in that,, inject the light beam of wavelength 350～700nm from first substrate-side with respect to each Information Level of dual-layer phase-change information recording medium, carry out recording of information and reproduce at least a
These dual-layer phase-change information recording medium have first substrate; second substrate; and between this first substrate and this second substrate, has first information layer at least successively; the middle layer and second Information Level; laser is injected from described first substrate-side and is carried out at least a of recording of information and reproduction; described first information layer has first thermal diffusion layer at least successively; first protective seam; first recording layer; second protective seam; first reflection horizon and second thermal diffusion layer; the film thickness of described first protective seam and second protective seam all is less than or equal to 35nm; the film thickness of described first thermal diffusion layer and second thermal diffusion layer is all more than or equal to 10nm, and the film thickness d of described first protective seam 1Film thickness d with described second protective seam 2Satisfy following formula d 1≤ d 2The relation of+5nm, d 1And d 2Unit be nm.
CNB2004800273639A 2003-09-22 2004-09-16 Dual-layer phase-change information recording medium and recording and reading method using the same Expired - Fee Related CN100442367C (en)

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CN1132902A (en) * 1994-12-28 1996-10-09 松下电器产业株式会社 Optical recording medium having dual information surfaces
JP2000222777A (en) * 1998-11-25 2000-08-11 Matsushita Electric Ind Co Ltd Optical information recording medium
WO2001097218A1 (en) * 2000-06-16 2001-12-20 Mitsubishi Chemical Corporation Optical information recording medium
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Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1132902A (en) * 1994-12-28 1996-10-09 松下电器产业株式会社 Optical recording medium having dual information surfaces
JP2000222777A (en) * 1998-11-25 2000-08-11 Matsushita Electric Ind Co Ltd Optical information recording medium
US6514591B1 (en) * 1999-05-12 2003-02-04 Matsushita Electric Industrial Co., Ltd. Optical information recording medium
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