CN100437317C - Liquid crystal display device - Google Patents
Liquid crystal display device Download PDFInfo
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- CN100437317C CN100437317C CNB2006101393624A CN200610139362A CN100437317C CN 100437317 C CN100437317 C CN 100437317C CN B2006101393624 A CNB2006101393624 A CN B2006101393624A CN 200610139362 A CN200610139362 A CN 200610139362A CN 100437317 C CN100437317 C CN 100437317C
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- 239000004973 liquid crystal related substance Substances 0.000 title claims abstract description 98
- 239000011159 matrix material Substances 0.000 claims abstract description 76
- 239000000758 substrate Substances 0.000 claims abstract description 59
- 239000011347 resin Substances 0.000 claims abstract description 47
- 229920005989 resin Polymers 0.000 claims abstract description 47
- 239000010410 layer Substances 0.000 claims abstract description 21
- 239000010409 thin film Substances 0.000 claims abstract description 18
- 239000010408 film Substances 0.000 claims description 62
- 230000003287 optical effect Effects 0.000 claims description 35
- 239000011229 interlayer Substances 0.000 claims description 34
- 238000012216 screening Methods 0.000 claims description 26
- 239000000463 material Substances 0.000 claims description 13
- 239000011248 coating agent Substances 0.000 claims description 6
- 238000000576 coating method Methods 0.000 claims description 6
- 230000002093 peripheral effect Effects 0.000 abstract description 9
- 230000007547 defect Effects 0.000 abstract 1
- 230000015572 biosynthetic process Effects 0.000 description 8
- 238000005755 formation reaction Methods 0.000 description 8
- 238000000034 method Methods 0.000 description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 229910021417 amorphous silicon Inorganic materials 0.000 description 6
- 239000004020 conductor Substances 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 239000003990 capacitor Substances 0.000 description 4
- 238000009826 distribution Methods 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 239000011521 glass Substances 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 239000012528 membrane Substances 0.000 description 4
- 230000000149 penetrating effect Effects 0.000 description 4
- 230000008859 change Effects 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 239000012467 final product Substances 0.000 description 3
- 230000009471 action Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 230000009931 harmful effect Effects 0.000 description 2
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 2
- MRNHPUHPBOKKQT-UHFFFAOYSA-N indium;tin;hydrate Chemical compound O.[In].[Sn] MRNHPUHPBOKKQT-UHFFFAOYSA-N 0.000 description 2
- 230000035515 penetration Effects 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 239000003566 sealing material Substances 0.000 description 2
- 238000004528 spin coating Methods 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- JGNPSJMNGPUQIW-UHFFFAOYSA-N [C].CC=C Chemical compound [C].CC=C JGNPSJMNGPUQIW-UHFFFAOYSA-N 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000011514 reflex Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
- 230000008719 thickening Effects 0.000 description 1
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Abstract
A liquid crystal display device of the present invention comprises an array substrate equipped with signal lines and scan lines deployed in a matrix arrangement, thin film transistors (TFTs) provided near the intersections of the signal lines and scan lines, and pixel electrodes of which one is provided in each of the pixel domains delimited by the signal lines and scan lines ; a color filter substrate on which are formed color filters and common electrodes; and a liquid crystal layer placed between said two substrates; wherein the pixel electrodes are positioned so as not to overlap the signal lines, or not to overlap the scan lines, or not to overlap either, when viewed from above, and below the spaces between adjacent pixel electrodes, resin black matrices are deployed so as to overlap the pixel electrodes when viewed from above. These features allow a liquid crystal display device to be provided that can prevent light leakage from the peripheral portions of the scan lines and signal lines, as well as curb display defects such as crosstalk, and that additionally achieves efficient power consumption.
Description
Technical field
The present invention relates to liquid crystal indicator, particularly be created between sweep trace, signal wire and pixel electrode, reach the electrostatic capacitance between sweep trace, signal wire and common electrode, to realize preventing to show that bad and reduction consumes the liquid crystal indicator of electric power about a kind of reduction.
Background technology
In recent years, not only at the information communication machine context, aspect general e-machine, being suitable for also of liquid crystal indicator popularized rapidly.Because this liquid crystal indicator can autoluminescence, therefore use rear side that penetrating type liquid crystal indicator backlight is set mostly at substrate.
Below, with reference to Fig. 5 and Fig. 6 the general penetrating type liquid crystal indicator that in the past used is described.Fig. 5 amplifies 1 pixel portion that shows the available liquid crystal display device, and perspective shows the approximate vertical view of color filter (color filter) substrate simultaneously, and Fig. 6 is the cut-open view from the VI-VI line cut-out of Fig. 5.
The available liquid crystal display device 10A of Fig. 5 and Fig. 6 record be by: array base palte 11, filter substrate 12 and the liquid crystal layer 13 that is arranged between this two substrates are constituted, and wherein, array base palte 11 possesses: the transparency carrier 31 that is made of glass etc.; Constituted by conductive materials, and be provided in the multi-strip scanning line 32 and the signal wire 33 on these transparency carrier 31 surfaces with clathrate; Be arranged near the cross part of this sweep trace 32 and signal wire 33 and as the thin film transistor (TFT) (to call TFT in the following text) 34 of on-off element (switchingelement); Constituted by conductive materials, and roughly and sweep trace 32 be configured in a plurality of auxiliary capacitance electrodes 36 of 32 of sweep traces abreast; Cover sweep trace 32 and auxiliary capacitance electrode 36 by gate insulating film 37 that inorganic insulating membrane constituted; Cover signal wire 33 and TFT34 by protection dielectric film 38 that inorganic insulating membrane constituted; Be arranged on protection on the dielectric film 38 by interlayer film 39 that organic insulating film constituted; And being surrounded, and the pixel electrode 40 of formation such as the ITO (Indium Tin Oxide, tin indium oxide) that is provided with by the mode that is equivalent to the zone of 1 pixel with covering by the sweep trace 32 and the signal wire 33 that are arranged on the interlayer film 39.
TFT34 comprises: from the source electrode S of signal wire 33 differences; Gate electrode G from sweep trace 32 differences; Be connected the drain electrode D of pixel electrode 40; And the silicon layer 35 that constituted such as polysilicon (p-Si) or amorphous silicon (a-Si).And pixel electrode 40 is connected drain electrode D via the contact hole 41 that is set in place the interlayer film 39 on auxiliary capacitance electrode 36.
And filter substrate 12 possesses: the transparency carrier 21 that is made of glass etc.; The black matrix (omission icon) that is formed on this transparency carrier 21 surfaces and forms with clathrate by crome metal etc.; Be separately positioned on color filter 22R, 22G, the 22B by formations such as red (R), green (G), blue (B) in the zone of distinguishing by this black matrix; And be arranged on the last and common electrode 23 that constituted by ITO etc. of this color filter 22R, 22G, 22B.Moreover, make two substrates 11,12 surfaces relatively to and utilize sealing material (omission icon) to fit its outer peripheral edges each other, and make distance piece 14 be provided in its inside, enclose liquid crystal simultaneously to form liquid crystal layer, make liquid crystal indicator 10A thus.
This for example is documented in that the Jap.P. spy opens in the 2001-188256 communique, for a kind of usefulness so that the technology that the aperture opening ratio of liquid crystal indicator improves.So in order to improve existing aperture opening ratio, as with so that the technology of the zone of pixel electrode extension, known have a technology that is called as FSP (field shieldpixel) etc., covers on the TFT with organic insulating film, and form the pixel electrode that makes after the surperficial general planarization.
Summary of the invention
(problem that invention institute desire solves)
Fig. 7 is from the cut-open view of the VII-VII line cut-out of Fig. 5.As shown in Figure 7, in existing liquid crystal indicator 10A, the side end of pixel electrode 40 that covers the zone of suitable 1 pixel forms to overlook to observe with sweep trace 32 and signal wire 33 equitant modes.Its purpose is in order to prevent the light leak from this seam portion, promptly prevent to make from the light backlight of liquid crystal indicator 10A the light leak that liquid crystal layer produced by the part of LCD alignment disorder by apply voltage in the pixel electrode end, and make sweep trace 32, signal wire 33 and pixel electrode 40 overlaid persons, usually, sweep trace 32 and signal wire 33 are same widths, its width L
1Be about 8 μ m, the width L overlapping with pixel electrode 40
2Be about 2 μ m respectively.
Yet when forming pixel electrode on sweep trace and signal wire, between sweep trace 32, signal wire 33 and pixel electrode 40, as shown in Figure 7, formation has predetermined electrostatic capacitance Csd (, Cgd).If (, Cgd) is more than predetermined value, when liquid crystal indicator 10A drives, at display frame meeting generation crosstalk (cross talk) this electrostatic capacitance Csd.Crosstalking is the background frame that shows in white especially when carrying out black display, can take place at the periphery of this black display.This generation mechanism of crosstalking is considered to because of shown below that reason caused.That is, Fig. 8 shows to produce the picture of crosstalking to liquid crystal indicator 10A shown in Figure 7 at for example Fig. 5.When white background shown in Figure 8 shows the picture of black, will be made as an X in the white background area, about black picture, when promptly being made as a some Y in the zone of signal line side, the voltage waveform of each point X, Y is as shown in Figure 9.
As shown in Figure 9, when the gate electrode of TFT was applied signal, drive TFT also began to write to pixel electrode.And the current potential of the pixel electrode of this moment is kept the scheduled period (with reference to Fig. 9 A) by auxiliary capacitive electrode.Moreover during this write, the white that is written in pixel electrode showed that the current potential of usefulness cooperates the amplitude of counter electrode current potential Vcom, during keeping in change (with reference to Fig. 9 B) up and down.Under this state, when observation is applied to the voltage waveform of the signal wire of an X, Y and pixel electrode, for a signal wire of X part, be during the next one writes, often to apply the voltage that white shows before the arrival, and the current potential of the pixel electrode of this X part is to change (with reference to Fig. 9 C, Fig. 9 D) up and down with same-amplitude before the arrival during the next one writes.
On the other hand, when the signal wire of some Y part being applied the voltage that black display uses on the way, the current potential of the pixel electrode of some Y part signal wire is applied black display with voltage during, amplitude can change (with reference to and 9E).As a result, the virtual value that is applied to the voltage of liquid crystal can be in an X, Y difference, and produces difference delta V, and this difference is to be shown as luminance difference and to cause and produce the reason (with reference to Fig. 9 F) of crosstalking.
That is, in the liquid crystal indicator 10A shown in the prior art, have because of electrostatic capacitance Csd and produce the problem of crosstalking in electrostatic capacitance Cgd that produces between sweep trace 32 and the pixel electrode 40 and generation between signal wire 33 and plain electrode 40.For addressing this problem, if increase by the drain electrode D of auxiliary capacitive electrode 36 and TFT34 the capacitor that constitutes of overlapping part electric capacity, promptly keep the auxiliary capacitor of electric capacity as the signal of active-matrix action usefulness, though then can ignore this electrostatic capacitance Cgd, Csd, but in order to increase this auxiliary capacitor, the area of auxiliary capacitive electrode 36 is increased, because this auxiliary capacitive electrode 36 is to be made of the conductive materials that hides optical activity, therefore more can produce the problem that each aperture ratio of pixels reduces.
Moreover, in the liquid crystal indicator 10A of prior art, as shown in Figure 7, when making array base palte 11 and filter substrate 12 superimposed, between the common electrode 23 of the signal wire 33 of array base palte 11 and filter substrate 12, also be formed with electrostatic capacitance Csc.This electrostatic capacitance Csc forms between sweep trace 32 and common electrode 23 too, and when this electrostatic capacitance was made as Cgc, the equivalent electrical circuit of 1 pixel of liquid crystal indicator 10A as shown in figure 10.
As shown in figure 10, electrostatic capacitance Csc and Cgc can be to causing harmful effect to utmost point electrode potential Vcom, in detail, because of this electrostatic capacitance Csc and Cgc consume electric power, therefore also have the problem that the consumption electric power of liquid crystal indicator 10A increases.
And, use has the character that weak current flows when the TFT of liquid crystal indicator has irradiates light, when producing this weak current, produce flicker owing to causing to hinder to conducting (ON)/shutoff (OFF) control of TFT, therefore in existing liquid crystal indicator, to prevent that in order reaching light from leaking the purpose to TFT, will to deceive matrix configuration on filter substrate to overlook the overlapping mode of observation and TFT, to prevent that outer rayed is to TFT.Thus, though can suppress outer rayed to a certain degree to TFT, but since in that black matrix is set on the filter substrate can and TFT between form relatively broader gap, therefore can't prevent from oblique outer light, and can be radiated at the black matrix that is constituted by crome metal etc. from light backlight, its a part of light can reflect and be radiated at TFT, thereby has and can produce light and leak problem to TFT.
The inventor etc. are point in view of the above problems, study a kind of light leak and flicker that prevents from the peripheral part of sweep trace and signal wire, and can suppress to be created in found that of liquid crystal indicator of the electrostatic capacitance between signal wire and sweep trace and the pixel electrode well: by on signal wire and sweep trace, forming than this signal wire and the wideer resin black matrix of sweep trace, pixel electrode and signal wire and sweep trace are overlapping can not to produce light leak yet even do not make, and because of signal wire and sweep trace do not need to carry out shading between each pixel, and signal wire and sweep trace can be become in a narrow margin, therefore can suppress to be created in the electric capacity of the electrostatic capacitance between signal wire and sweep trace and the common electrode, grind thus and create the present invention.
That is, the objective of the invention is to prevent light leak, and the demonstration that can suppress to crosstalk etc. is bad, realizes the liquid crystal indicator of efficient power consumption simultaneously from the peripheral part of sweep trace and signal wire.
(means of dealing with problems)
For addressing the above problem, the invention of the liquid crystal indicator of first aspect present invention has: the 1st substrate possesses signal wire and sweep trace with rectangular configuration, is arranged near thin film transistor (TFT) the cross part of above-mentioned signal wire and sweep trace and the pixel electrode that is arranged on each pixel region of being distinguished by above-mentioned signal wire and sweep trace; The 2nd substrate is formed with the black matrix of color filter, common electrode and corresponding above-mentioned pixel region; And liquid crystal layer, be configured between above-mentioned two substrates; Wherein, pixel electrodes be arranged on overlook observation not can with at least one side's position overlapped of above-mentioned signal wire and sweep trace, and the bottom between the pixel electrodes of adjacency disposes resin black matrix to overlook the overlapping mode of observation and pixel electrodes.
Moreover in the liquid crystal indicator of above-mentioned first aspect, at least one side's of above-mentioned signal wire and sweep trace width is 3 to 5 μ m, and the width of above-mentioned resin black matrix is 6 to 10 μ m.
And in the liquid crystal indicator of above-mentioned first aspect, above-mentioned resin black matrix is on the top of above-mentioned signal wire and sweep trace and be embedded in the interlayer film, and this interlayer film is arranged on the interelectrode bottom of aforementioned pixel.
In addition, in the liquid crystal indicator of above-mentioned first aspect, above-mentioned resin black matrix also is arranged on the top of above-mentioned thin film transistor (TFT).
And, in the liquid crystal indicator of above-mentioned first aspect, be provided with the interlayer film, and at least a portion between pixel electrodes and above-mentioned interlayer film is provided with reflectance coating in the bottom of pixel electrodes.
The invention of the liquid crystal indicator of second aspect present invention has: the 1st substrate possesses signal wire and sweep trace with rectangular configuration, is arranged near thin film transistor (TFT) the cross part of above-mentioned signal wire and sweep trace and the pixel electrode that is arranged on each pixel region of being distinguished by above-mentioned signal wire and sweep trace; The 2nd substrate is formed with the black matrix of color filter, common electrode and corresponding above-mentioned pixel region; And liquid crystal layer, be configured between above-mentioned two substrates; Wherein, pixel electrodes be arranged on overlook observation not can with at least one side's position overlapped of above-mentioned signal wire and sweep trace, and the bottom between the pixel electrodes of adjacency is to overlook the screening optical activity member that the overlapping mode of observation and pixel electrodes disposes insulativity.
And in the liquid crystal indicator of above-mentioned second aspect, above-mentioned screening optical activity member also is arranged on the top of above-mentioned thin film transistor (TFT).
In addition, in the liquid crystal indicator of above-mentioned second aspect, the screening optical activity member of above-mentioned insulativity is made of different materials with the black matrix of above-mentioned filter substrate side.
The invention of the liquid crystal indicator of third aspect present invention has: the 1st substrate, possess signal wire and sweep trace, be arranged near the cross part of above-mentioned signal wire and sweep trace thin film transistor (TFT), cover the interlayer film of above-mentioned thin film transistor (TFT) and be arranged on the interlayer film, be i.e. the pixel electrode of each pixel region of distinguishing by above-mentioned signal wire and sweep trace with rectangular configuration; The 2nd substrate is formed with the black matrix of color filter, common electrode and corresponding above-mentioned pixel region; And liquid crystal layer, be configured between above-mentioned two substrates; Wherein, pixel electrodes be arranged on overlook observation not can with at least one side's position overlapped of above-mentioned signal wire and sweep trace, and the bottom between pixel electrodes is crossed the edge of pixel electrodes from the edge of above-mentioned signal wire or sweep trace and is provided with the screening optical activity member of insulativity.
And in the liquid crystal indicator of the above-mentioned third aspect, above-mentioned screening optical activity member also is arranged on the top of above-mentioned thin film transistor (TFT).
In addition, in the liquid crystal indicator of the above-mentioned third aspect, the screening optical activity member of above-mentioned insulativity is made of different materials with the black matrix of above-mentioned filter substrate side.
(effect of invention)
The present invention can bring into play following excellent results by possessing above-mentioned formation.Promptly, invention according to the liquid crystal indicator of each side of the present invention, pixel electrode be arranged on not can with signal wire and sweep trace position overlapped, but with the overlapping mode of this pixel electrode in the interelectrode bottom of pixel adjacent, be formed with the screening optical activity member of resin black matrix, insulativity, therefore between pixel electrode, can not produce light leak.Promptly, in existing liquid crystal indicator, in order to make peripheral part can not produce light leak at signal wire etc., by making signal wire and pixel electrode overlapping, and make light can not be radiated at the liquid crystal of the orientation disorder that the pixel electrode end produced, but, therefore need not form pixel electrode and replace signal wire and sweep trace to overlook the overlapping mode of observation and signal wire and sweep trace because the screening optical activity member of the present invention by resin black matrix, insulativity carries out shading well.Thus, can suppress to be created in electrostatic capacitance Csd between pixel electrode and the signal wire especially well, promptly become the electrostatic capacitance of the generation reason of crosstalking, therefore even do not increase formation keeps the auxiliary capacitor of electric capacity as signal the area of auxiliary capacitance electrode, the demonstration that also can suppress to crosstalk etc. is bad.In addition, owing to can suppress this electrostatic capacitance, so because of the electric power that this electrostatic capacitance consumed also can be suppressed, and a kind of liquid crystal indicator that consumes electric power of cutting down can be provided.Moreover, this electrostatic capacitance Csd applies various signals to signal wire, therefore have the capacity ratio that is created between signal wire and the pixel electrode and be created in the bigger tendency of electric capacity between sweep trace and the pixel electrode, get final product on the signal wire so resin black matrix is arranged at least.This is to make this electric capacity can not become excessive former owing to sweep trace only is supplied to the ON/OFF signal TFT.Yet, if resin black matrix also is set on sweep trace, can not cause demonstration bad yet, and can cut down the electrostatic capacitance between sweep trace and pixel electrode and sweep trace and common electrode yet at this, therefore can realize consuming electric power liquid crystal indicator still less.
In above-mentioned first aspect,, be preferably 4 μ m owing to do not need in the past therefore can to make than 3 to 5 thin about 8 μ m μ m in order to guarantee to hide signal wire and the sweep trace about the required about 8 μ m of optical activity.Thus, the electrostatic capacitance that produces between the signal wire of narrowed width and sweep trace and pixel electrode also will inevitably diminish, and can realize the liquid crystal indicator of more high efficiency power consumption.And, replace signal wire and sweep trace this moment and be 6 to 10 μ m in order to the width of the resin black matrix of keeping the screening optical activity between pixel electrode, be preferably the 8 μ m that equate with existing signal wire and sweep trace, hide optical activity and compare lower in the past problem and do not have.
Moreover, in above-mentioned first aspect, resin black matrix is embedded in the interlayer film, therefore can make the thickness of interlayer film identical with existing person, therefore do not have the problem of the thickening of liquid crystal indicator own, and resin black matrix is to be insulated by organic or inorganic around to dispose under the membrane-enclosed state, therefore can not be subjected to the harmful effect from the electric charge of each distribution.
Moreover, in above-mentioned each side, by being arranged on resin black matrix between pixel electrode, hiding the optical activity member, though can suppress light leak etc. on the distribution, but if this resin black matrix, screening optical activity member also were set on TFT, then could positively stop light to leak to TFT.Promptly, compare with the situation that black matrix is set on filter substrate as prior art, the distance of black matrix and TFT is extremely narrow, therefore can take place hardly to reflex to resin black matrix and be radiated at the situation of TFT, and can suppress to produce flicker well from the intrusion of oblique outer light and from light backlight.In addition, be arranged on resin black matrix on the TFT, hide that the optical activity member can use and above-mentioned resin black matrix, hide optical activity member same material person, therefore, if the resin black matrix, the screening optical activity member that are arranged between pixel electrode are formed in same step, then can not increase manufacturing step, therefore comparatively desirable.
Moreover, in above-mentioned first aspect, be not limited to the penetrating type liquid crystal indicator, if form reflectance coating on the light shielding part of auxiliary capacitance electrode in for example being provided with 1 pixel region and TFT etc., then become the semi penetration type liquid crystal indicator, if, then become reflection-type liquid-crystal display device at the whole reflectance coating that forms of pixel region, by possessing any above-mentioned formation, all can provide a kind of liquid crystal indicator that suppresses to show bad high-level efficiency power consumption.
Description of drawings
Fig. 1 is the approximate vertical view that amplifies 1 pixel portion of the liquid crystal indicator that shows an embodiment of the present invention and have an X-rayed filter substrate.
Fig. 2 is the cut-open view with the II-II line cut-out of Fig. 1.
Fig. 3 is the cut-open view with the III-III line cut-out of Fig. 1.
Fig. 4 is the cut-open view with the IV-IV line cut-out of Fig. 1.
Fig. 5 amplifies 1 pixel part that shows the available liquid crystal display device and the approximate vertical view of having an X-rayed filter substrate.
Fig. 6 is the cut-open view with the VI-VI line cut-out of Fig. 5.
Fig. 7 is the cut-open view with the VII-VII line cut-out of Fig. 5.
Fig. 8 shows the synoptic diagram that produces the picture of crosstalking.
Fig. 9 A to Fig. 9 F is the voltage oscillogram that shows the each point that produces the liquid crystal indicator when crosstalking.
Figure 10 is the equivalent electrical circuit of 1 pixel part of existing liquid crystal indicator.
Figure 11 is the approximate vertical view that amplifies 1 pixel portion of the liquid crystal indicator that shows other embodiment of the present invention and have an X-rayed filter substrate.
Figure 12 A is the cut-open view that shows the XII-XII line of Figure 11, and Figure 12 B is the cut-open view of existing liquid crystal indicator.
The explanation of main element symbol
10,10A liquid crystal indicator 11 array base paltes
12 filter substrates, 13 liquid crystal layers
14 distance pieces, 21,31 transparency carriers
22R, 22G, 22B color filter 23 common electrodes
32 sweep traces, 33 signal wires
34 thin film transistor (TFT)s (TFT), 35 silicon layers
36 auxiliary capacitance electrodes, 37 gate insulating films
38 protection dielectric films, 39 interlayer films
40 pixel electrodes, 41 contact holes
45 (signal line side) resin black matrix
46 (scan line side) resin black matrix
48,49 shading members, 50 black matrixes
S source electrode G gate electrode
The D drain electrode
Embodiment
Below, with reference to description of drawings preferred forms of the present invention.Yet embodiment shown below is illustrative, uses so that the liquid crystal indicator that technological thought of the present invention is specialized not is that intention is defined in this liquid crystal indicator with the present invention also applicable other embodiment in being contained in claim.
(embodiment 1)
Fig. 1 is the approximate vertical view that amplifies 1 pixel portion of the liquid crystal indicator that shows an embodiment of the present invention and have an X-rayed filter substrate, Fig. 2 is the cut-open view with the II-II line cut-out of Fig. 1, Fig. 3 is the cut-open view with the III-III line cut-out of Fig. 1, and Fig. 4 is the cut-open view with the IV-IV line cut-out of Fig. 1.Moreover in liquid crystal indicator shown below 10, the component part identical with available liquid crystal display device 10A is marked identical element numbers and is illustrated.
Liquid crystal indicator 10 of the present invention is made of array base palte 11, filter substrate 12 and the liquid crystal layer 13 that is arranged between this two substrates as shown in Figures 1 and 2, and wherein, array base palte 11 possesses: the transparency carrier 31 that is made of glass etc.; Constituted by conductive materials, and be provided in the multi-strip scanning line 32 and the signal wire 33 on these transparency carrier 31 surfaces with clathrate; Be arranged near the cross part of this sweep trace 32 and signal wire 33 and as the thin film transistor (TFT) (to call TFT in the following text) 34 of on-off element; Constituted by conductive materials, and roughly and sweep trace 32 be configured in a plurality of auxiliary capacitance electrodes 36 of 32 of sweep traces abreast; Cover sweep trace 32 and auxiliary capacitance electrode 36 by gate insulating film 37 that inorganic insulating membrane constituted; Cover signal wire 33 and TFT34 by protection dielectric film 38 that inorganic insulating membrane constituted; Be arranged on protection on the dielectric film 38 by interlayer film 39 that organic insulating film constituted; And by being arranged on the pixel electrode 40 that ITO (Indium Tin Oxide, tin indium oxide) that the mode by be equivalent to the zone of 1 pixel with covering that sweep trace 32 on the interlayer film 39 and signal wire 33 surrounded is provided with etc. constitutes; And the resin black matrix 45,46 that is embedded in the interlayer film 39 on sweep trace 32 and the signal wire 33.
Resin black matrix the 45, the 46th, the part of mark shade among Fig. 1, the resin material that is hidden optical activity by tool is constituted, and corresponding sweep trace 32 and signal wire 33, be formed with the signal line side resin black matrix 45 that is formed on the signal wire 33 and be formed on scan line side resin black matrix 46 on the sweep trace 32 with clathrate.The live width of sweep trace 32 and signal wire 33 is in the present embodiment for equal, so the live width of resin black matrix 45,46 is also equal, is good with 6 to 10 μ m, is preferably 8 μ m.At this moment, the width of sweep trace 32 and signal wire 33 is good with 3 to 5 μ m, is more preferred from 4 μ m.
And filter substrate 12 possesses: the transparency carrier 21 that is made of glass etc.; Be formed on the black matrix (omission icon) that forms by crome metal etc. on these transparency carrier 21 surfaces with clathrate; Be separately positioned on color filter 22R, 22G, the 22B by formations such as red (R), green (G), blue (B) in the zone of distinguishing by this black matrix; And be arranged on the common electrode 23 that is constituted by ITO etc. on this color filter 22R, 22G, the 22B.Moreover, by make two substrates 11,12 surfaces relatively to and utilize sealing material (omission icon) to fit its outer peripheral edges each other, and make distance piece 14 be provided in its inside, enclose liquid crystal simultaneously to form liquid crystal layer, make liquid crystal indicator 10 thus.
The manufacturing step of the array base palte 11 of liquid crystal indicator 10 of the present invention then, is described.
At first, on transparency carrier 31, make by conductive materials film forming that alloy constituted such as the aluminium of predetermined thickness, molybdenum, chromium or its.Then, utilize known photoetching process to make it patterning, its part is removed in etching thus, and forms towards the wide multi-strip scanning line 32 of 4 μ m of horizontal expansion, and forms auxiliary capacitance electrode 36 on 32 on described multi-strip scanning line.In addition, the auxiliary capacitance electrode 36 of adjacency is the auxiliary capacitance electrode of the so-called Cs OnCommon type that linked of the binding distribution by narrow width.
Then, be formed with mode on the transparency carrier 31 of sweep trace 32 and auxiliary capacitance electrode 36, make gate insulating film 37 film forming of predetermined thickness to cover by above-mentioned steps.This gate insulating film 37 uses the transparent resin material that is made of silicon nitride etc.On gate insulating film 37, make for example a-Si film forming of semiconductor layer.And, make the part of the gate electrode G that covering extends from sweep trace 32 residual, and the a-Si layer is removed in etching, to form silicon layer 35 as the part of TFT34.Then, utilize the method identical to form with said method: towards with the wide many signal line 33 of 4 μ m of the direction extension of sweep trace 32 quadratures; Extend and be connected the source electrode S of silicon layer 35 from this signal wire 33; And cover on the auxiliary capacitance electrode 36 and an end is connected the drain electrode D of silicon layer 35.Thus, near the cross part of the sweep trace 32 of transparency carrier 31 and signal wire 33, be formed with TFT 34 as on-off element.Moreover; utilize CVD method (chemical vapour deposition technique; Chemical Vapor Deposition) with the mode that covers various distributions make protection dielectric film 38 film forming be 0.1 to 0.5 μ m thick about, this protection dielectric film 38 is by usefulness on transparency carrier 31 so that the inorganic insulating material of surface stabilization is constituted.
Then, on the top of sweep trace 32 and signal wire 33, form resin black matrix 45,46 in the mode that covers described sweep trace 32 and signal wire 33.The width of this resin black matrix 45,46 is 8 μ m, can't see that to overlook observation the sweep trace 32 of the bottom that is positioned at this resin black matrix 45,46 and the mode of signal wire 33 form (with reference to Fig. 3 and Fig. 4).
Then, utilize spin-coating method will with so that the flattening surface of array base palte 11 by interlayer film 39 film forming that organic insulation constituted whole of substrate.The thickness of this interlayer film 39 becomes the roughly thickness of 2.0 to 3.0 μ m in thicker position.
In addition, this interlayer film 39 is to become mem stage, resin black matrix 45,46 is embedded in its inner mode film forming.And the part on the auxiliary capacitance electrode 36 that is positioned at this interlayer film 39 be provided with in order to electrically connecting the contact hole 41 of pixel electrode described later 40 and drain electrode D, but the position in this hole is not limited on the auxiliary capacitance electrode 36.But, be formed with the part of contact hole 41, because when fitting with filter substrate 12 as liquid crystal indicator 10, distance is different with other parts between its substrate, therefore have the uneven problem of display quality, therefore be preferably on the auxiliary capacitance electrode 36 that is arranged on screening optical activity material.Form pixel electrode 40 at per 1 pixel region that is surrounded by sweep trace 32 and signal wire 33 by for example ITO constituted.At this moment, the outer peripheral edges of pixel electrode 40 be arranged on overlook observation not can with sweep trace 32 that closely connects or signal wire 33 position overlapped, and these outer peripheral edges form in the mode that is positioned on the resin black matrix 45,46.By above step manufacturing array substrate 11.
As mentioned above, according to liquid crystal indicator 10 of the present invention, can be not overlapping when the outer peripheral edges of pixel electrode 40 are observed to overlook with sweep trace 32 and signal wire 33, and the mode overlapping with resin black matrix 45,46 forms, good screening optical activity can be guaranteed by resin black matrix 45,46, and the electric capacity of the electrostatic condenser between sweep trace 32 and signal wire 33 and the pixel electrode 40 can be reduced to be created in.
In addition, can not form sweep trace 32 and signal wire 33, therefore can make its line widths shrink, for example become 4 μ m from existing about 8 μ m owing to consider to hide optical activity.Therefore, also can cut down this sweep trace 32 and signal wire 33 and the electric capacity of common electrode 23 as electrostatic condenser Csc, the Cgc (with reference to Fig. 1) of electrode, therefore can not consume electric power in this electrostatic capacitance, and become liquid crystal indicator 10 with the good consumption electric power action of efficient.
And, in the above-described embodiments, though only resin black matrix is arranged between the pixel adjacent electrode, be on sweep trace and the signal wire, but when being arranged on this resin black matrix on the TFT, owing to can suppress well because of light leaks the flicker that produces to TFT, therefore comparatively desirable.Moreover, when so desire forms resin black matrix on TFT, be provided with simultaneously with the step that on sweep trace and signal wire, forms resin black matrix.Describe in detail in embodiment 2 about this point.
(embodiment 2)
Figure 11 is the approximate vertical view that amplifies 1 pixel portion of the liquid crystal indicator that shows other embodiment of the present invention and have an X-rayed filter substrate, and Figure 12 A is the cut-open view that shows the liquid crystal indicator of other embodiment of the present invention.With the embodiment 1 identical person identical element numbers of mark then.This cut-open view is the section of the position of the position of display signal line 33 and TFT34, and the cut-open view that cuts off with the XII-XII line.Figure 12 B be with embodiment 2 relatively usefulness and Figure 12
The existing cut-open view of the same position of A.
Embodiment 2 also similarly to Example 1, to overlook when observing, do not dispose with signal wire 33,, cross the edge of pixel electrode 40 from the edge of signal wire 33 and be provided with the shading member 48 of insulativity in the bottom of pixel electrode 40 with the overlapping mode of pixel electrode 40.About the black matrix 50 of filter substrate 12 sides of icon not in the explanation of embodiment 1, figure indicates the black matrix 50 that forms in the mode of overlooking when observing and sweep trace 32, signal wire 33 are overlapping in embodiment 2.
The shading member 48 of insulativity also can be same with the resin black matrix 45 of embodiment 1, hides optical activity as long as have, and also can be the oxide of insulator, but when consideration manufacturing face, machined surface etc., is good with resin system person.
Particularly, the shading member 48 of insulativity is to mix with propylene carbon coated particle at general resin material.Because the tool insulativity, thus be good with the high resistance person, particularly with 10
13Ω cm is above to be good.And specific inductive capacity is good with the junior, and DIELECTRIC CONSTANT is more preferred from below the 10F/m below 14F/m, and is comparatively desirable to lower unwanted electric capacity.
In addition, this shading member 48 requires that with the black matrix 50 of filter substrate 12 sides the screening optical activity is arranged, but is constituted with different materials.Shading member 48 is having the high optical activity person of screening for good as far as possible, but not necessarily will have and the equal screening optical activity of the black matrix 50 of filter substrate 12 sides.Usually the black matrix 50 of filter substrate 12 sides be arranged on than be close to be formed on whole of substrate common electrode 23 more near transparency carrier 21 sides, so main as long as only consider the screening optical activity.Therefore, general black matrix 50 forms by make the mode of film forming such as crome metal with sputtering method.Although and be about 500, extremely thin, the screening optical activity is very high, prevents the colour mixture that is caused because of the adjacency look thus.On the other hand, shading member 48 as mentioned above, is not only wished to have the screening optical activity, and is had high resistance and low-k between signal wire 33 and pixel electrode 40.Therefore it is more important than black matrix 50 also can be properties of materials, but the screening optical activity is than black matrix 50 difference persons.
This shading member 48 makes similarly to Example 1 and utilizes spin-coating method film forming person to be patterned as predetermined shape.Particularly, in the existing panel of Figure 12 B shown in the reference diagram, the overlapping part of signal wire and pixel electrode not only, the top that also comprises signal wire 33 all is provided with shading member 48.Therefore, part at signal wire and the pixel electrode overlapping in order to have shading now, the electric capacity that must produce is significantly reduced, and existing by signal wire and pixel electrode is overlapping prevents that near the light leak the edge at pixel electrode from also can prevent by shading member 48.
This shading member 48 is to be made of resin, thus form easily thicker, so by making it become the roughly thickness about 1.0 to 1.5 μ m, and can cover effectively since the oblique light of injecting backlight.And, in order to cover the thicker shading member 48 of formation and to make having an even surface of array base palte 11 sides, be on the interlayer film 39 of the roughly thickness about 2.0 to 3.0 μ m in film forming, pixel electrode 40 can be formed, thereby the lifting of aperture opening ratio can be sought.Particularly,, can cover since the oblique light of injecting backlight in array base palte 11 sides effectively, therefore not too need to consider in array base palte 11 sides from light leak backlight by shading member 48 is formed on array base palte 11 sides than heavy back.Therefore, the black matrix 50 of filter substrate 12 sides also need not be considered the light leak from array base palte 11 sides backlight, therefore can make black matrix 50 careful, more can seek the lifting of aperture opening ratio.
Moreover, cover shading member 48 tops with interlayer film 39 again, but also can interlayer film 39 be set, and on shading member 48, form pixel electrode 40 in this part.Yet, DIELECTRIC CONSTANT by the interlayer film 39 that organic insulating film constituted is about 4F/m, than this, the permittivity ratio interlayer film 39 of above-mentioned shading member 48 is higher, therefore in order to reduce unwanted electric capacity as far as possible, preferably cover the structure on the top of shading member 48 in advance with interlayer film 39.
And in embodiment 2, also be provided with shading member 49 on the top of TFT34.This shading member 49 with shading member 48 same materials, same steps as setting.So, by shading member 49 is set on TFT, and can prevent from the oblique outer light of injecting (the figure shown in the direction of arrow) with shading member 49, and can prevent from light backlight that also this light is reflected by the black matrix 50 by filter substrate 12 sides that constituted with crome metal etc. by shading member 49.Therefore, described light can not be radiated at TFT 34, and can prevent that light from leaking to TFT.And, owing to be the outer light that prevents from oblique in the past, therefore must form the black matrix 50 of filter substrate 12 sides to a certain degree, but need not carry out above-mentioned steps by 49 of shading members in the mode that covers TFT 34 slightly widely.Therefore, also can the width identical form the black matrix 50 of filter substrate 12 sides, black matrix 50 also can be set on TFT 34, thereby can improve the aperture opening ratio of liquid crystal indicator 10 with TFT 34.
Moreover shading member 48 covers signal wire 33 with similar trapezoidal shape, but is not limited to this shape.Cross the edge of pixel electrode 40 and be provided with shading member 48 from the edge of signal wire 33 and also can, cross the edge of pixel electrode 40 and shading member 48 is set from a method, edge of signal wire 33, the edge that crosses pixel electrode 40 in addition from the opposing party edge of signal wire 33 sets shading member 48, promptly is respectively arranged with shading member 48 in the both sides of signal wire 33 and also can.
Claims (11)
1. liquid crystal indicator has:
The 1st substrate possesses: with the signal wire and the sweep trace of rectangular configuration, be arranged near thin film transistor (TFT) the cross part of above-mentioned signal wire and sweep trace and the pixel electrode that is arranged on each pixel region of being distinguished by above-mentioned signal wire and sweep trace;
The 2nd substrate is formed with the black matrix of color filter, common electrode and corresponding above-mentioned pixel region; And
Liquid crystal layer is configured between above-mentioned two substrates;
Wherein, pixel electrodes be arranged on overlook observation not can with at least one side's position overlapped of above-mentioned signal wire and sweep trace, and the bottom between the pixel electrodes of adjacency disposes resin black matrix to overlook the overlapping mode of observation and pixel electrodes.
2. liquid crystal indicator according to claim 1, wherein, at least one side's of above-mentioned signal wire and sweep trace width is 3 to 5 μ m, the width of above-mentioned resin black matrix is 6 to 10 μ m.
3. liquid crystal indicator according to claim 1, wherein, above-mentioned resin black matrix is on the top of above-mentioned signal wire and sweep trace and be embedded in the interlayer film, and this interlayer film is arranged on the interelectrode bottom of aforementioned pixel.
4. liquid crystal indicator according to claim 1, wherein, above-mentioned resin black matrix also is arranged on the top of above-mentioned thin film transistor (TFT).
5. liquid crystal indicator according to claim 1 wherein, is provided with the interlayer film in the bottom of pixel electrodes, and at least a portion between pixel electrodes and above-mentioned interlayer film is provided with reflectance coating.
6. liquid crystal indicator has:
The 1st substrate possesses: with the signal wire and the sweep trace of rectangular configuration, be arranged near thin film transistor (TFT) the cross part of above-mentioned signal wire and sweep trace and the pixel electrode that is arranged on each pixel region of being distinguished by above-mentioned signal wire and sweep trace;
The 2nd substrate is formed with the black matrix of color filter, common electrode and corresponding above-mentioned pixel region; And
Liquid crystal layer is configured between above-mentioned two substrates;
Wherein, pixel electrodes be arranged on overlook observation not can with at least one side's position overlapped of above-mentioned signal wire and sweep trace, and the bottom between the pixel electrodes of adjacency is to overlook the screening optical activity member that the overlapping mode of observation and pixel electrodes disposes insulativity.
7. liquid crystal indicator according to claim 6, wherein, above-mentioned screening optical activity member also is arranged on the top of above-mentioned thin film transistor (TFT).
8. liquid crystal indicator according to claim 6, wherein, the screening optical activity member of above-mentioned insulativity is made of different materials with the black matrix of above-mentioned filter substrate side.
9. liquid crystal indicator has:
The 1st substrate, possess signal wire and sweep trace, be arranged near the cross part of above-mentioned signal wire and sweep trace thin film transistor (TFT), cover the interlayer film of above-mentioned thin film transistor (TFT) and be arranged on the above-mentioned interlayer film, be i.e. the pixel electrode of each pixel region of distinguishing by above-mentioned signal wire and sweep trace with rectangular configuration;
The 2nd substrate is formed with the black matrix of color filter, common electrode and corresponding above-mentioned pixel region; And
Liquid crystal layer is configured between above-mentioned two substrates;
Wherein, pixel electrodes be arranged on overlook observation not can with at least one side's position overlapped of above-mentioned signal wire and sweep trace,
And the bottom between pixel electrodes is crossed the edge of pixel electrodes from the edge of above-mentioned signal wire or sweep trace and is provided with the screening optical activity member of insulativity.
10. liquid crystal indicator according to claim 9, wherein, above-mentioned screening optical activity member also is arranged on the top of above-mentioned thin film transistor (TFT).
11. liquid crystal indicator according to claim 9, wherein, the screening optical activity member of above-mentioned insulativity is made of different materials with the black matrix of above-mentioned filter substrate side.
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| TWI383232B (en) | 2009-03-19 | 2013-01-21 | Au Optronics Corp | Thin film transistor array substrate |
| CN102768444A (en) * | 2011-05-06 | 2012-11-07 | 瀚宇彩晶股份有限公司 | Liquid crystal display panel |
| CN111919163B (en) * | 2019-02-22 | 2023-01-10 | 京东方科技集团股份有限公司 | Array substrate and display device |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1410820A (en) * | 2001-10-09 | 2003-04-16 | 瀚宇彩晶股份有限公司 | Thin film electrocrystal liquid crystal display device and making method |
| US20050105017A1 (en) * | 2003-11-12 | 2005-05-19 | Lg.Philips Lcd Co., Ltd. | Liquid crystal display device and method for fabricating the same |
| US20050140842A1 (en) * | 2003-12-30 | 2005-06-30 | Lg.Philips Lcd Co., Ltd. | Substrate for a liquid crystal display device and fabricating method thereof |
| CN1637553A (en) * | 2003-12-27 | 2005-07-13 | Lg.菲利浦Lcd株式会社 | Liquid crystal display device and manufacturing method thereof |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1410820A (en) * | 2001-10-09 | 2003-04-16 | 瀚宇彩晶股份有限公司 | Thin film electrocrystal liquid crystal display device and making method |
| US20050105017A1 (en) * | 2003-11-12 | 2005-05-19 | Lg.Philips Lcd Co., Ltd. | Liquid crystal display device and method for fabricating the same |
| CN1637553A (en) * | 2003-12-27 | 2005-07-13 | Lg.菲利浦Lcd株式会社 | Liquid crystal display device and manufacturing method thereof |
| US20050140842A1 (en) * | 2003-12-30 | 2005-06-30 | Lg.Philips Lcd Co., Ltd. | Substrate for a liquid crystal display device and fabricating method thereof |
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