CN100437051C - Tunnelling resonance microsound sensor - Google Patents
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- CN100437051C CN100437051C CNB2005100128152A CN200510012815A CN100437051C CN 100437051 C CN100437051 C CN 100437051C CN B2005100128152 A CNB2005100128152 A CN B2005100128152A CN 200510012815 A CN200510012815 A CN 200510012815A CN 100437051 C CN100437051 C CN 100437051C
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Abstract
The present invention relates to a sensor, particularly to a sound sensor. More specifically, the present invention relates to a tunnelling resonance micro-sound sensor. The present invention solves the problems that a varistor of the existing silicon piezoresistance type sound sensor is adulterated with polysilicon, the sensitivity is lower, the temperature stability is poor, and the requirement of high precision for the modern measuring technique can not be satisfied. The present invention utilizes the characteristic that a superlattice quantum well film has piezo-resistance effect. The superlattice film of the present invention is provided with tunnelling resonance varistors. A substrate of the superlattice film is processed into a force transmission structure of a resonant cavity which is concave inwards, and the four tunnelling resonance varistors are positioned at the edge of the resonant cavity which is concave inwards. The whole tunnelling resonance micro-sound sensor adopts quantum devices processed and manufactured by an MEMS technology. Because the present invention has the quantum effect, the surface effect and the size effect, the present invention has the characteristics of high sensitivity, low power consumption, small volume, low power consumption, easy digitalization, strong environmental suitability, low cost, etc. The present invention is suitable for various high-sensitivity acoustic detection fields.
Description
Technical field
The present invention relates to sensor, particularly sonic transducer is specially a kind of highly sensitive tunnelling resonance microsound sensor based on the superlattice film piezoresistive effect.
Background technology
At present, the pressure resistance type sonic transducer is an acoustical signal measurement device comparatively commonly used, and it is based on the piezoresistive effect principle of silicon.So-called piezoresistive effect, promptly solid causes the variation of resistivity under the stress field effect, thereby causes the phenomenon that resistance changes.The voltage dependent resistor (VDR) of existing silicon piezoresistance type sonic transducer all is a doped polycrystalline silicon on the market, and its sensitivity is lower, and temperature stability is relatively poor, can't satisfy the high-precision requirement of modern measuring technology.The existing less microphone sensor of volume mainly is the condenser type electret transducer; Minimum at present sonic transducer is about 1mm
3About various MEMS (MEMS (micro electro mechanical system)) device, but their sensitivity is not high, frequency band range is little, and environmental suitability is poor.
Nano super-lattice quantum well thin-film with resonance tunneling effect is to utilize molecular beam epitaxial growth technology (MBE) to carry out film growth and a kind of nano material with quantum effect of preparing, it has good electrology characteristic, wherein the resonance tunnel-through of electronics and little belt delivering characteristic have shown good electron engineering using value, at home and abroad be widely used, as resonance tunnel-through diode (RTD).Molecular beam epitaxy is a kind of technology that is mapped to growth superlattice film on the heated substrate in ultrahigh vacuum (10-10Torr) with one or more thermo-moleculars or atomic beam.Prepare (GaAs) substrate earlier before the growth, use molecular beam epitaxial growth technology (MBE) on (GaAs) substrate, to grow the very thin superlattice film of one deck again.Superlattice film is bottom-up collector electrode contact layer, collector layer, separation layer, barrier layer, potential well layer, barrier layer, separation layer, emitter layer, emitter electrode contact layer.According to different each layer of superlattice film material therefor, the thickness in the field of use, doping content can be distinguished to some extent.
In the mesoscopic physics field, if the mean free path of electronics is greater than the feature geometries yardstick of sample, The Wave Behavior of Electrons matter has just highlighted.The behavior of electronics can use the theory as similar optics to describe, and is referred to as electron optics.This provides theoretical foundation for the electronic wave behavior of studying in the complicated micro-nano structure.The notion of superlattice mainly proposes in order to seek good differential load impedant device at first.The maturation of superlattice growth technology is for electron optics has been established technical foundation in the application aspect the nanometer electronic device.But these those skilled in the art do not find that the superlattice quantum well thin-film has piezoresistive effect at present.
Say on the principle that under the mechanical signal effect, the stress distribution in the nano super-lattice quantum well structure will change; STRESS VARIATION can cause the generation of built in field under the certain condition; Built in field will cause that quantum level changes in the nano belt structure; The quantum level variation can cause that the resonance tunnel-through electric current changes.In brief, near resonance tunnel-through voltage,, a faint mechanical signal can be converted into a stronger electrical signal by above-mentioned four physical processes.This process is called to be situated between sees piezoresistive effect.That is: mechanical signal produces strain, and strain produces built in field, and built in field produces the quantum level drift, and the quantum level drift produces the resonance tunnel-through electric current and changes.
Under the certain condition of voltage, the variation of tunnelling current also can be expressed as changes in resistance, that is to say that mechanical signal can cause the variation that superlattice film resistance is bigger.
In experiment, adopt the I-V curve of I-V curvilinear net analyser test GaAs/AlAs superlattice film, and apply the slight pressure of different sizes to film, whenever apply a pressure and just note corresponding I-V curve, thereby obtain one group of pressure-dependent I-V curve (accompanying drawing 1).Be easy to calculate that resistance value plots the piezoresistive effect curve (accompanying drawing 2) that curve just can obtain superlattice film with the situation of change of pressure with this variation tendency under the certain situation of voltage from this curve.
By above-mentioned experiment confirm superlattice film have the high sensitivity piezoresistive effect really.Because the mechanism of superlattice piezoresistive effect is that its resonance tunnel-through electric current changes under pressure influence, is called the resonance tunnel-through voltage dependent resistor (VDR) so will have the superlattice film of piezoresistive effect.
Summary of the invention
The voltage dependent resistor (VDR) that the present invention solves existing silicon piezoresistance type sonic transducer all is a doped polycrystalline silicon, its sensitivity is lower, temperature stability is relatively poor, can't satisfy the problem of the high-precision requirement of modern measuring technology, utilize the characteristic that the superlattice quantum well thin-film has the high sensitivity piezoresistive effect, a kind of highly sensitive tunnelling resonance microsound sensor is provided.
The present invention adopts following technical scheme to realize: tunnelling resonance microsound sensor, it makes with the following method: grow required superlattice film with molecular beam epitaxy (MBE) technology on Semiconductor substrate, utilize micro electro mechanical device (MEMS) process technology to carry out following processing:
(1) utilize etching technics to remove all films except that being four films that " ten " word distributes on the substrate;
(2) adopt etching technics again, the remainder of every film except that a bar shaped area that stays eroded to the contact electrode layer of collector, make and form a raised line on the every film;
(3) deposit ohmic contact layer with sedimentation at film surface, produce collector and emitter (being about to collector and emitter ohmic contact layer in addition peels off) with peeling off method on the contact electrode layer and the raised line surface of collector again;
(4) use the PECVD method at film surface deposit silicon dioxide insulating layer;
(5) on the silicon dioxide insulating layer on emitter and collector top, etch fairlead with opening the fairlead version;
(6) evaporation CrAu is at film surface evaporation CrAu layer;
(7), form the extraction electrode on fairlead top with outer lead version photoetching CrAu layer;
(8) control temperature quick alloy of short time in the time of 430 ℃ is so that form good Ohmic contact between extraction electrode and the collector and emitter;
Utilize back-etching technology to etch an indent resonator cavity in the substrate bottom surface, and make four film voltage dependent resistor (VDR)s be positioned at the edge of indent resonator cavity.
Described each layer of superlattice film adopts following material, doping content, layer thickness, to improve the performances such as sensitivity of microphone sensor:
In superlattice film, the main effect of emitter and collector contact electrode layer is to form the resistance in series that Ohmic contact reduces device.Emitter layer and collector layer: carry out heavy doping Fermi level is positioned on the conduction band, concrete doping content influences crest voltage and cut-in voltage value, mix from the launch site in addition or collecting zone reduces gradually to the doping content of barrier region, the syllabus of deciding like this be in order to prevent that dopants penetration to the barrier region, influencing device property.The main effect of separation layer is that the impurity of isolating in the doping launch site at high temperature spreads to potential barrier and potential well area, adjusts the thickness of separation layer and also can adjust crest voltage and cut-in voltage value; Barrier layer: barrier layer is two key components of building in the unipotential trap system, and this layer should be selected the big material of energy gap, generally undopes, and this layer thickness reduces to help improving peak current density; Potential well layer: potential well layer also is one of key stratum, generally undopes, and well region thickness increases, and discrete energy levels reduces in the trap, helps reducing crest voltage, improves the electric current peak-to valley ratio.When yet well region thickness was big, peak point current also diminished, so adopt sub-well structure (GaAs/In
0.1Ga
0.9As/GaAs).Because the discrete energy levels in the sub-trap is lower, just can accomplish that the gross thickness of trap is not very big, can obtain lower peak voltages, can keep higher peak current density again.After this, the order of each layer is symmetrical fully with said sequence, up to substrate.In launch site and barrier region separation layer, respectively increase one deck In
0.1Ga
0.9As, its objective is and between launch site and potential barrier, form trap before the base, also produced discrete energy levels in this trap, built in the preceding trap in the discrete energy levels and trap the two dimension between the discrete energy levels to the resonance tunnel-through of two dimension with regard to making originally to change into like this by the resonance tunnel-through between discrete energy levels in launch site electronics and the trap.Owing to be subjected to the restriction of tunnelling front and back energy and transverse momentum conservation, can on the IV curve, form a very sharp-pointed resonance current peak, consequently reduce crest voltage, improve peak-to valley ratio; Dwindle emitter area simultaneously, to reduce its intrinsic capacity as far as possible.
Molecular beam epitaxy of the present invention (MBE) technology is the mature technology of known preparation superlattice film.Etching involved in the present invention (photoetching and corrosion) technology, ohm layer sedimentation technology, peel off method technology, PECVD method deposit silicon dioxide layer process, with open the fairlead carving go out fairlead technology, film surface form the CrAu layer process, with outer lead version photoetching CrAu layer form extraction electrode technology and fast alloying technology all be the MEMS device manufacturing process of known, maturation and commercialization use.Wherein, in the chapter 7 (semi-conductive epitaxial growth) of " semiconductor material " book that willow people etc. writes, Science Press publishes, detailed introduction is arranged in the MBE molecular beam epitaxy technology; Various processing technologys involved in the present invention have detailed introduction in the chapter 2 (micromachining technology) of " microsensor and microactrator pandect " that [U.S.] Gregory T.A. Ke Waqi work, Zhang Wendong etc. translate.
The present invention finds and has utilized the piezoresistive effect of superlattice film, appropriate design superlattice film structure and utilize film growth techniques and the MEMS processing technology, provided a kind of tunnelling resonance microsound sensor.The present invention is based on to be situated between and sees the piezoresistive effect new principle, first quantum effect is incorporated into this field of acoustic sounding, and processes first tunnelling resonance microsound sensor with quantum effect based on the GaAs substrate of China.This microphone sensor has overcome the problem that the silicon piezoresistance type sonic transducer exists, not only sensitivity has improved one to two order of magnitude, temperature influence is little, and (doped polycrystalline silicon voltage dependent resistor (VDR) temperature influence is bigger, main cause partly is because the influence of dosed carrier, and the well region He Lei district of superlattice does not all have to mix, so resonance tunnel-through voltage dependent resistor (VDR) temperature influence is less, temperature stability good), and have volume little, be convenient to the advantage that attracts people's attention such as integrated.Tunnelling resonance microsound sensor is the quantum device that all adopts the MEMS processes to make, because of having quantum effect, surface effect and size effect, and show high sensitivity, characteristics such as low-power consumption, microbody amass, low-power consumption and easily digitizing, environmental suitability is strong, cost is low.Therefore wide application prospect is arranged.Tunnelling resonance microsound sensor has characteristics such as frequency range is adjustable, Gain Adjustable, applicable to various high sensitivity acoustic soundings field.
Description of drawings
Fig. 1 is the pressure-dependent I-V curve of superlattice film;
Fig. 2 is the piezoresistive effect curve of superlattice film;
Fig. 3 is the structural representation of superlattice film; Wherein: 1-substrate, 2-superlattice film.
Fig. 4 is a tunnelling resonance microsound sensor manufacturing procedure synoptic diagram; It among the figure is order with a-b-c-d-e-f-g.
Fig. 5 has the structural representation of the microphone sensor of resonator cavity for etching on the substrate;
Fig. 6 is a microphone sensor enlarged drawing in kind;
Fig. 7 is a microphone sensor back side in kind enlarged drawing;
Embodiment
Tunnelling resonance microsound sensor, it makes with the following method: grow required superlattice film 2 with molecular beam epitaxy (MBE) technology on Semiconductor substrate 1, utilize micro electro mechanical device (MEMS) process technology to carry out following processing:
(1) utilize etching technics to remove all films (shown in Fig. 4 a) except that being four films that " ten " word distributes on the substrate 1;
(2) adopt etching technics again, the remainder of every film (Fig. 4 b) except that a bar shaped area that stays eroded to the contact electrode layer 3 of collector, make and form a raised line (Fig. 4 c) on the every film;
(3) deposit ohmic contact layer with sedimentation at film surface, produce collector 4 and emitter 7 (Fig. 4 d) (emitter need not be peeled off) with peeling off method on the contact electrode layer and the raised line surface of collector again; Being about to collector and emitter ohmic contact layer in addition peels off; Ohmic contact layer adopts the AuGeNi material;
(4) use the PECVD method at film surface deposit silicon dioxide layer insulation 5 (Fig. 4 e);
(5) on the silicon dioxide insulating layer on emitter and collector top, carve fairlead (Fig. 4 f) with opening the fairlead version;
(6) evaporation CrAu forms the CrAu layer at film surface;
(7), form the extraction electrode 6 (Fig. 4 g) on fairlead top with outer lead version photoetching CrAu layer;
(8) control temperature quick alloy of short time in the time of 430 ℃ is so that form good Ohmic contact between extraction electrode and the collector and emitter;
Utilize back-etching technology to etch an indent resonator cavity 8 in the substrate bottom surface, and make four film voltage dependent resistor (VDR)s be positioned at the edge of indent resonator cavity.(Fig. 5).
Four film voltage dependent resistor (VDR) bridge-types are connected.
The principle of work of microphone sensor is when the responant diaphragm vibration that acoustical signal excitation indent resonator cavity bottom forms, cause big stress in responant diaphragm edge, make the resistance of resonance tunnel-through voltage dependent resistor (VDR) equal proportion to change along with the variation of stress, the output voltage of Wheatstone bridge also changes thereupon, so the variation of voltage dependent resistor (VDR) resistance has reflected the variation of acoustical signal, thereby realized the detection of acoustical signal.
Claims (4)
1, a kind of tunnelling resonance microsound sensor, it is characterized by: it makes with the following method: grow required superlattice film (2) with molecular beam epitaxy technique on Semiconductor substrate (1), utilize the micro electro mechanical device process technology to carry out following processing:
(1) utilize etching technics to remove all films except that being four films that " ten " word distributes on the substrate (1);
(2) adopt etching technics again, the remainder of every film except that a bar shaped area that stays eroded to the contact electrode layer (3) of collector, make and form a raised line on the every film;
(3) deposit ohmic contact layer with sedimentation at film surface, produce collector (4) and emitter (7) with peeling off method on the contact electrode layer and the raised line surface of collector again;
(4) use the PECVD method in film surface deposit silicon dioxide layer insulation (5);
(5) on the silicon dioxide insulating layer on emitter and collector top, carve fairlead with opening the fairlead version;
(6) evaporation CrAu forms the CrAu layer at film surface;
(7), form the extraction electrode (6) on fairlead top with outer lead version photoetching CrAu layer;
(8) control temperature quick alloy of short time in the time of 430 ℃ is so that form good Ohmic contact between extraction electrode and the collector and emitter;
Utilize back-etching technology to etch an indent resonator cavity (8) in the substrate bottom surface, and make four films be positioned at the edge of indent resonator cavity.
2, tunnelling resonance microsound sensor as claimed in claim 1 is characterized by: each layer of superlattice film adopts following material, doping content, layer thickness:
3, tunnelling resonance microsound sensor as claimed in claim 1 or 2 is characterized by: indent resonator cavity (8) is for circular.
4, tunnelling resonance microsound sensor as claimed in claim 1 or 2 is characterized by: four thin film bridge types are connected.
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| Application Number | Priority Date | Filing Date | Title |
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| CNB2005100128152A CN100437051C (en) | 2005-09-12 | 2005-09-12 | Tunnelling resonance microsound sensor |
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| CNB2005100128152A CN100437051C (en) | 2005-09-12 | 2005-09-12 | Tunnelling resonance microsound sensor |
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| CN100437051C true CN100437051C (en) | 2008-11-26 |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102104817B (en) * | 2009-12-21 | 2013-10-02 | 财团法人工业技术研究院 | Acoustic sensor |
| CN113701927B (en) * | 2021-10-27 | 2022-01-04 | 东南大学 | Piezoresistive sensor for realizing reliability test and resistance value deviation compensation |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4839708A (en) * | 1986-02-08 | 1989-06-13 | Kabushiki Kaisha Toyota Chuo Kenkyusho | Electromechanical semiconductor transducer |
| JPH0843430A (en) * | 1994-07-28 | 1996-02-16 | Fujikura Ltd | Piezoelectric type vibration sensor and its manufacture |
| JPH098326A (en) * | 1995-06-15 | 1997-01-10 | Matsushita Electric Works Ltd | Semiconductor pressure sensor |
| US5770866A (en) * | 1995-12-21 | 1998-06-23 | Electronics And Telecommunicatios Research Institute | Resonant tunneling electronic device |
| CN2636428Y (en) * | 2003-07-27 | 2004-08-25 | 高洪新 | Pressure resistance sensing element of pressure sensor |
| CN1632486A (en) * | 2004-11-19 | 2005-06-29 | 清华大学 | Resonant tunneling micro mechanical force sensor and method for manufacturing the same |
-
2005
- 2005-09-12 CN CNB2005100128152A patent/CN100437051C/en not_active Expired - Fee Related
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4839708A (en) * | 1986-02-08 | 1989-06-13 | Kabushiki Kaisha Toyota Chuo Kenkyusho | Electromechanical semiconductor transducer |
| JPH0843430A (en) * | 1994-07-28 | 1996-02-16 | Fujikura Ltd | Piezoelectric type vibration sensor and its manufacture |
| JPH098326A (en) * | 1995-06-15 | 1997-01-10 | Matsushita Electric Works Ltd | Semiconductor pressure sensor |
| US5770866A (en) * | 1995-12-21 | 1998-06-23 | Electronics And Telecommunicatios Research Institute | Resonant tunneling electronic device |
| CN2636428Y (en) * | 2003-07-27 | 2004-08-25 | 高洪新 | Pressure resistance sensing element of pressure sensor |
| CN1632486A (en) * | 2004-11-19 | 2005-06-29 | 清华大学 | Resonant tunneling micro mechanical force sensor and method for manufacturing the same |
Non-Patent Citations (4)
| Title |
|---|
| C型压力传感器的设计. 牛德芳.传感器技术，第1995.1期. 1995 |
| C型压力传感器的设计. 牛德芳.传感器技术，第1995.1期. 1995 * |
| 共振隧穿二极管. 郭维廉，梁惠来，张世林等.微纳电子技术，第2002.5期. 2002 |
| 共振隧穿二极管. 郭维廉，梁惠来，张世林等.微纳电子技术，第2002.5期. 2002 * |
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