CN100429142C - Method for adjusting and controlling configuration of self-assembling block copolymer template oriented to nano micro machining - Google Patents

Method for adjusting and controlling configuration of self-assembling block copolymer template oriented to nano micro machining Download PDF

Info

Publication number
CN100429142C
CN100429142C CNB2004100136417A CN200410013641A CN100429142C CN 100429142 C CN100429142 C CN 100429142C CN B2004100136417 A CNB2004100136417 A CN B2004100136417A CN 200410013641 A CN200410013641 A CN 200410013641A CN 100429142 C CN100429142 C CN 100429142C
Authority
CN
China
Prior art keywords
block copolymer
solvent
template
adjusting
towards
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CNB2004100136417A
Other languages
Chinese (zh)
Other versions
CN1562730A (en
Inventor
王铀
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Harbin Institute of Technology
Original Assignee
Harbin Institute of Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Harbin Institute of Technology filed Critical Harbin Institute of Technology
Priority to CNB2004100136417A priority Critical patent/CN100429142C/en
Publication of CN1562730A publication Critical patent/CN1562730A/en
Application granted granted Critical
Publication of CN100429142C publication Critical patent/CN100429142C/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Classifications

    • BPERFORMING OPERATIONS; TRANSPORTING
    • B81MICROSTRUCTURAL TECHNOLOGY
    • B81CPROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00015Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
    • B81C1/00023Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems without movable or flexible elements
    • B81C1/00031Regular or irregular arrays of nanoscale structures, e.g. etch mask layer
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B81MICROSTRUCTURAL TECHNOLOGY
    • B81CPROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2201/00Manufacture or treatment of microstructural devices or systems
    • B81C2201/01Manufacture or treatment of microstructural devices or systems in or on a substrate
    • B81C2201/0101Shaping material; Structuring the bulk substrate or layers on the substrate; Film patterning
    • B81C2201/0147Film patterning
    • B81C2201/0149Forming nanoscale microstructures using auto-arranging or self-assembling material

Abstract

The present invention discloses to an adjusting and controlling method of the self-assembling form of a segmented copolymer moulding board for nanometer microprocessing, particularly relates to an adjusting and controlling method of requisite moulding board patterns of nanometer microprocessing. The existing adjusting processing method of segmented copolymer form has the disadvantages of limited adjusting and controlling capability, complicated processing technology and long required time. The present invention has the operation method that a segmented copolymer is dissolved in a solvent of dimethylbenzene to prepare a solution, and then the solution is cast on the surface of a base sheet to form a film by natural volatilization; the base sheet is placed in a closed container; the closed container is sealed after an organic solvent is dripped in the closed container; a moulding board can be obtained after the base sheet is taken out. The present invention has the advantages that the adjusted and controlled moulding board has form variety, the adjusting and controlling process is greatly controllable, the form of the moulding board is greatly ordered, complicated equipment is not needed, the technology is simple, the method has low cost and high efficiency, various patterns with the size of hundreds of nanometers can be obtained from the base sheet, etc. A self-assembling moulding board pattern which is similar to the shape of a cone gear can be obtained with the method of the present invention.

Description

Towards the little processing block copolymer template of nanometer self assembly morphology control method
Technical field:
The present invention relates to a kind of at the little regulate and control method that adds needed die plate pattern in man-hour of nanometer.
Background technology:
At present, preparation processing nanostructured has three kinds of different approach: a kind of is with macroscopical block material, by removing unnecessary part, be processed into nanostructured, usually be referred to as method from up to down, belong to traditional Micrometer-Nanometer Processing Technology, comprise photoetching technique and molecular beam epitaxy technique; Another kind is that the urstoff of microsystem is assembled into nano-device, is referred to as bottom-up method usually, belongs to the Micrometer-Nanometer Processing Technology of rising, and comprises manipulation mounting technology, molecular template technology and the chemical synthesising technology of scan-probe.More than two kinds of nanoprocessings all exist one can't evade the question: promptly when material comprised nanostructured, its construction unit quantity was surprising.If continue to use traditional processing mode structure is one by one processed,, go to consider then unworkable at all from required time and cost angle even feasible on the technology.No wonder the someone sighs with feeling: nano material is scientist's a dream, engineer's nightmare.The third approach be first kind with second method " self assembly " technology that combines.So-called self assembly is a kind of process that forms the supramolecular structure or the sight superstructure that is situated between under the foeign element condition of not having.The self assembly manufacture process is green, eco-friendly, and efficient is high.Because above plurality of advantages also comes from the needs that nanosecond science and technology develop, biogenic self-assembling technique has caused that in recent years scientist pays much attention to and become the most popular research field rapidly.1996, people such as Whitesides (being published in Science) at first utilized the ion etching technology that the spherical microcell pattern of block copolymer is copied to the thick SiN of 50nm 2On the mould material, obtain every square centimeter and have 10 11The SiN of individual micropore 2The membrane material (see figure 1) indicates and utilizes block copolymer self assembly mould plate technique to carry out the beginning of the little New Machining Technology technology of nanometer.
As for the processing method, new Opportunity coexists with challenge for self-assembling technique: be how to utilize the self assembly template to prepare corresponding construction nano material (duplicating of die plate pattern) on the one hand; On the other hand be how artificial adjustment self assembly die plate pattern is wished the nanostructured (regulation and control of die plate pattern) of structure with regulation and control.Pattern duplicate known can the realization (ion, ozone, remove to ultraviolet selecting part material) by lithographic technique.The control technique of die plate pattern is at present also in urgent need to be improved, because it is the key of template nanofabrication technique: have only the template of regulating and control out required pattern just might copy desirable structure.The processing method that can regulate and control the block copolymer form at present mainly contains: three kinds of methods such as The high temperature anneal, extra electric field processing, shear treatment.Wherein shear treatment is not suitable for the morphology control that relates to template applications owing to handling thickness of sample requirement is arranged.Remaining two kinds of methods are limited in one's ability for morphology control on the one hand, and the orderly form that regulation and control obtain is unique, let alone carries out the small template to regulate of hundreds of nanometer; Treatment process more complicated on the other hand, required time is very long.
Summary of the invention:
The object of the present invention is to provide a kind of simple, efficiently towards the little processing block copolymer template of nanometer self assembly morphology control method, concrete operation method is: polystyrene-saturated polybutadiene-polystyrene block copolymer or polystyrene-poly butadiene-polystyrene block copolymer are dissolved in the solution that is mixed with 0.1~1wt% concentration in the xylene solvent, cast under the room temperature condition on the smooth substrate surface of atomic level level, naturally the volatilization film forming, this cast membrane and the substrate that adheres to are positioned in the closed container, be lined with material in the closed container with adsorption solvent steam ability, at room temperature behind good solvent that drips block copolymer material on the material with adsorption solvent steam ability of closed container bottom or selective solvent, build the lid sealing then rapidly, the dripping quantity of good solvent or selective solvent reaches capacity vapor pressure solvent for being enough to, and takes out after 1 hour~7 days to be towards the little processing block copolymer template of nanometer.Freely regulating and control of template form is to realize carrying out micro-machined prerequisite of nanometer and basis by people's wish, the present invention has enriched the control technique of block copolymer nano template, compare with existing control technique, it has following advantage: 1. it has the diversity of regulation and control parameter: the present invention can use dissimilar organic solvents at different needs; Change vapor pressure solvent by regulating and controlling temperature; In addition, solvent also can produce different effects with the different of template time of contact, thereby affects the regulation and control result of template.In a word, the diversity of regulation and control parameter is determining the come out form of template of regulation and control to have diversity; 2. the regulation process height is controlled; 3. regulate and control template form high-sequential; 4. regulation and control do not need complex device, and technology is simple, and cost is low, the efficient height; 5. solvent vapo(u)r also has the function of etching in regulation and control, can obtain the various patterns of hundreds of nanoscale on substrate, and this point is significant for the process technology of following nanometer part; 6. by local etching and regulation and control, can also obtain being similar to the self assembly die plate pattern (see figure 6) of conical gear shape with method of the present invention, this means and utilize this class template can process the nanogears (see figure 7) in the future.
Description of drawings:
Fig. 1 utilizes the ion etching technology that the spherical microcell pattern of block copolymer SBS is copied to the thick SiN of 50nm 2On the mould material, obtain every square centimeter and have 10 11The SiN of individual micropore 2The structural representation of membrane material, (size 800 * 800nm) is that AFM (AFM) is dissolved in the aspect graph that dimethylbenzene casts in the film forming of volatilizing naturally on the substrate afterwards about SEBS or SBS block copolymer to Fig. 2, Fig. 3 is the AFM aspect graph (size 800 * 800nm) with the specific embodiment two or three methods regulation and control gained template, Fig. 4 is the AFM aspect graph (size 800 * 800nm) with specific embodiment four directions method regulation and control gained template, Fig. 5 is the AFM aspect graph (size 500 * 500nm) with the specific embodiment five methods regulation and control gained template, Fig. 6 holds concurrently with the regulation and control of the specific embodiment six methods that (size 800 * 800nm), Fig. 7 is the schematic diagram that can be processed micro parts by Fig. 6 template for the microsize template AFM aspect graph of etching.
The specific embodiment one: block copolymer self assembly template generally needs the solvent cast preparation, and the thickness of template need be controlled in the nanoscale.We find THICKNESS CONTROL in 100 nanometers at room temperature, to utilize organic good solvent or selective solvent to fumigate with interior block copolymer film, can comprehensively regulate and control the self assembly pattern of template.Polystyrene-saturated polybutadiene-polystyrene block copolymer or polystyrene-poly butadiene-polystyrene block copolymer are dissolved in the solution that is mixed with 0.1~1wt% concentration in the xylene solvent, cast under the room temperature condition on the smooth substrate surface of atomic level level, naturally the volatilization film forming, this cast membrane and the substrate that adheres to are positioned in the closed container, be lined with material in the closed container with adsorption solvent steam ability, at room temperature behind good solvent that drips block copolymer material on the material with adsorption solvent steam ability of closed container bottom or selective solvent, build the lid sealing then rapidly, the dripping quantity of organic solvent reaches capacity vapor pressure solvent for being enough to, and takes out after 1 hour~7 days to be towards the little processing block copolymer template of nanometer.Abundant, the high-sequential of Tiao Kong die plate pattern form in this way.
The specific embodiment two: the regulate and control method of present embodiment template is: polystyrene-saturated polybutadiene-polystyrene (SEBS) block copolymer is dissolved in the solution that is mixed with 0.1wt% concentration in the xylene solvent, cast in the film forming of volatilizing naturally on the mica sheet under the 20-30 ℃ of condition, the thickness of film preferably is less than 100 nanometers, the template form as shown in Figure 2, this cast membrane and the mica sheet that adheres to are positioned in the culture dish that is lined with filter paper constant temperature at 25 ℃, drip good solvent toluene on the filter paper of culture dish bottom, build lid rapidly, the dripping quantity of toluene reaches capacity vapor pressure solvent for being enough to, after 3 hours products obtained therefrom is taken out, regulation and control rear pattern plate form as shown in Figure 3.And then by the water surface block copolymer film (being template) is transferred to and to be wanted the replica material surface to carry out replica.
The specific embodiment three: the regulate and control method of present embodiment template is: polystyrene-poly butadiene-polystyrene (SBS) triblock copolymer is dissolved in the solution that is mixed with 1wt% concentration in the xylene solvent, monocrystalline silicon piece is positioned in the culture dish that is lined with continuous flower, room temperature condition drips dimethylbenzene down and takes in the silk floss of culture dish bottom, to be enough to make the dimethylbenzene of the vapor pressure solvent amount of reaching capacity to cast on the monocrystalline silicon piece then, build lid rapidly, after 10 hours the product taking-up is promptly got template, regulation and control rear pattern plate form can be transferred to block copolymer template by the water surface then and want the replica material surface to carry out replica to get final product as shown in Figure 3.
The specific embodiment four: the regulate and control method of present embodiment template is: the SEBS block copolymer that U.S. Shell company is produced is dissolved in the solution that is mixed with 0.5wt% concentration in the xylene solvent, cast in the film forming of volatilizing naturally on the mica sheet under the 20-30 ℃ of condition, the thickness of film is 20 nanometers, the template form as shown in Figure 2, this cast membrane and the mica sheet that adheres to are positioned in the culture dish that is lined with filter paper constant temperature at 25 ℃, to be enough to make the selective solvent heptane droplets of the vapor pressure solvent amount of reaching capacity to be added on the filter paper of culture dish bottom then, build lid rapidly, after 1 hour the product taking-up is promptly got rear pattern plate, gained template form can be transferred to block copolymer film (being the gained template) by the water surface then and want the replica material surface to carry out replica to get final product as shown in Figure 4.
The specific embodiment five: the regulate and control method of present embodiment template is: the SBS triblock copolymer that U.S. Shell company is produced is dissolved in the solution that is mixed with 0.2wt% concentration in the xylene solvent, cast in the film forming of volatilizing naturally on the monocrystalline silicon piece under the room temperature condition, the thickness of gained film is 40 nanometers, the template form as shown in Figure 2, this cast membrane and the monocrystalline silicon piece that adheres to are positioned in the culture dish that is lined with filter paper constant temperature at 25 ℃, dropping is enough to make the cyclohexane of the vapor pressure solvent amount of reaching capacity on the filter paper of culture dish bottom, build lid rapidly, after 24 hours the product taking-up is promptly got rear pattern plate, gained template form can be transferred to block copolymer film (promptly using the inventive method gained template) by the water surface then and want the replica material surface to carry out replica to get final product as shown in Figure 5.
The specific embodiment six: the regulate and control method of present embodiment template is: polystyrene-saturated polybutadiene-polystyrene block copolymer is dissolved in the solution that is mixed with 0.8wt% concentration in the xylene solvent, cast in the film forming of volatilizing naturally on the mica sheet under the 20-30 ℃ of condition, the template form as shown in Figure 2, this cast membrane placement is had in the extraordinary measuring cup of ground airtight performance, sample is apart from measuring cup bottom 1cm, dropping is enough to make the dimethylbenzene of the vapor pressure solvent amount of reaching capacity to build lid rapidly in the measuring cup bottom, 25 ℃ of constant temperature after 7 days take out product and promptly get rear pattern plate, gained template form as shown in Figure 6, this moment, solvent vapo(u)r eroded most of block copolymer template, stay local minute sized die plate pattern, provide condition for utilizing this template to process micro-nano part.

Claims (6)

1, a kind of towards the little processing block copolymer template of nanometer self assembly morphology control method, it is characterized in that polystyrene-saturated polybutadiene-polystyrene block copolymer or polystyrene-poly butadiene-polystyrene block copolymer are dissolved in the solution that is mixed with 0.1~1wt% concentration in the xylene solvent, cast under the room temperature condition on the smooth substrate surface of atomic level level, naturally the volatilization film forming, this cast membrane and the substrate that adheres to are positioned in the closed container, be lined with material in the closed container with adsorption solvent steam ability, at room temperature behind good solvent that drips block copolymer material on the material with adsorption solvent steam ability of closed container bottom or selective solvent, build the lid sealing then rapidly, the dripping quantity of good solvent or selective solvent reaches capacity vapor pressure solvent for being enough to, and takes out after 1 hour~7 days to be towards the little processing block copolymer template of nanometer.
2 is described towards the little processing block copolymer template of nanometer self assembly morphology control method according to claim 1, it is characterized in that the xylene solution pouring volatilizees the thickness of film forming less than 100 nanometers on substrate.
3, described according to claim 1 towards the little processing block copolymer template of nanometer self assembly morphology control method, it is characterized in that the smooth substrate of described atomic level level is mica sheet or monocrystalline silicon.
4, described according to claim 1 towards the little processing block copolymer template of nanometer self assembly morphology control method, it is characterized in that described closed container is culture dish or measuring cup.
5, described according to claim 1 towards the little processing block copolymer template of nanometer self assembly morphology control method, it is characterized in that described material with adsorption solvent steam ability is filter paper or continuous flower.
6, it is characterized in that towards the little processing block copolymer template of nanometer self assembly morphology control method good solvent is toluene or dimethylbenzene according to claim 1 is described, selective solvent is cyclohexane or heptane.
CNB2004100136417A 2004-03-24 2004-03-24 Method for adjusting and controlling configuration of self-assembling block copolymer template oriented to nano micro machining Expired - Fee Related CN100429142C (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CNB2004100136417A CN100429142C (en) 2004-03-24 2004-03-24 Method for adjusting and controlling configuration of self-assembling block copolymer template oriented to nano micro machining

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CNB2004100136417A CN100429142C (en) 2004-03-24 2004-03-24 Method for adjusting and controlling configuration of self-assembling block copolymer template oriented to nano micro machining

Publications (2)

Publication Number Publication Date
CN1562730A CN1562730A (en) 2005-01-12
CN100429142C true CN100429142C (en) 2008-10-29

Family

ID=34478227

Family Applications (1)

Application Number Title Priority Date Filing Date
CNB2004100136417A Expired - Fee Related CN100429142C (en) 2004-03-24 2004-03-24 Method for adjusting and controlling configuration of self-assembling block copolymer template oriented to nano micro machining

Country Status (1)

Country Link
CN (1) CN100429142C (en)

Families Citing this family (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7579278B2 (en) * 2006-03-23 2009-08-25 Micron Technology, Inc. Topography directed patterning
US8394483B2 (en) 2007-01-24 2013-03-12 Micron Technology, Inc. Two-dimensional arrays of holes with sub-lithographic diameters formed by block copolymer self-assembly
US8083953B2 (en) 2007-03-06 2011-12-27 Micron Technology, Inc. Registered structure formation via the application of directed thermal energy to diblock copolymer films
US8557128B2 (en) 2007-03-22 2013-10-15 Micron Technology, Inc. Sub-10 nm line features via rapid graphoepitaxial self-assembly of amphiphilic monolayers
US8294139B2 (en) 2007-06-21 2012-10-23 Micron Technology, Inc. Multilayer antireflection coatings, structures and devices including the same and methods of making the same
US8097175B2 (en) 2008-10-28 2012-01-17 Micron Technology, Inc. Method for selectively permeating a self-assembled block copolymer, method for forming metal oxide structures, method for forming a metal oxide pattern, and method for patterning a semiconductor structure
US7959975B2 (en) 2007-04-18 2011-06-14 Micron Technology, Inc. Methods of patterning a substrate
US8372295B2 (en) 2007-04-20 2013-02-12 Micron Technology, Inc. Extensions of self-assembled structures to increased dimensions via a “bootstrap” self-templating method
US8404124B2 (en) 2007-06-12 2013-03-26 Micron Technology, Inc. Alternating self-assembling morphologies of diblock copolymers controlled by variations in surfaces
US8080615B2 (en) 2007-06-19 2011-12-20 Micron Technology, Inc. Crosslinkable graft polymer non-preferentially wetted by polystyrene and polyethylene oxide
US8283258B2 (en) 2007-08-16 2012-10-09 Micron Technology, Inc. Selective wet etching of hafnium aluminum oxide films
US8999492B2 (en) 2008-02-05 2015-04-07 Micron Technology, Inc. Method to produce nanometer-sized features with directed assembly of block copolymers
US8101261B2 (en) 2008-02-13 2012-01-24 Micron Technology, Inc. One-dimensional arrays of block copolymer cylinders and applications thereof
US8425982B2 (en) 2008-03-21 2013-04-23 Micron Technology, Inc. Methods of improving long range order in self-assembly of block copolymer films with ionic liquids
US8426313B2 (en) 2008-03-21 2013-04-23 Micron Technology, Inc. Thermal anneal of block copolymer films with top interface constrained to wet both blocks with equal preference
US8114300B2 (en) 2008-04-21 2012-02-14 Micron Technology, Inc. Multi-layer method for formation of registered arrays of cylindrical pores in polymer films
US8114301B2 (en) 2008-05-02 2012-02-14 Micron Technology, Inc. Graphoepitaxial self-assembly of arrays of downward facing half-cylinders
US8304493B2 (en) 2010-08-20 2012-11-06 Micron Technology, Inc. Methods of forming block copolymers
US8900963B2 (en) 2011-11-02 2014-12-02 Micron Technology, Inc. Methods of forming semiconductor device structures, and related structures
US9087699B2 (en) 2012-10-05 2015-07-21 Micron Technology, Inc. Methods of forming an array of openings in a substrate, and related methods of forming a semiconductor device structure
US9229328B2 (en) 2013-05-02 2016-01-05 Micron Technology, Inc. Methods of forming semiconductor device structures, and related semiconductor device structures
US9177795B2 (en) 2013-09-27 2015-11-03 Micron Technology, Inc. Methods of forming nanostructures including metal oxides
CN105384952B (en) * 2015-09-15 2018-01-23 北京航空航天大学 A kind of regulation and control method being orientated using mechanical shear stress to Self-Assembling of Block Copolymer
CN105713189B (en) * 2016-02-16 2018-01-16 浙江大学 The methods and applications of the vertical phase domain structure of block copolymer and formation microphase-separated
CN106222752B (en) * 2016-08-29 2019-02-15 上海理工大学 A method of preparing organic crystal film
CN111303478B (en) * 2020-04-22 2021-06-08 北京航空航天大学 Naked eye 3D display screen material and preparation method thereof

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2002031002A1 (en) * 2000-10-11 2002-04-18 Uab Research Foundation Nanostructures formed through cyclohexadiene polymerization
WO2002055185A2 (en) * 2000-10-19 2002-07-18 Eidgenoess Tech Hochschule Block copolymers for multifunctional self-assembled systems
US20020164481A1 (en) * 2001-04-13 2002-11-07 Carlos Garcia Superparamagnetic nanostructured materials
JP2003146625A (en) * 2001-11-19 2003-05-21 National Institute Of Advanced Industrial & Technology Nonsilica-based mesostructure and method for manufacturing the same
CN1425706A (en) * 2003-01-14 2003-06-25 天津大学 Polyglycol block modified polyhexanolactone and its preparing method
US20030205853A1 (en) * 1998-11-04 2003-11-06 Peidong Yang Hierarchically ordered porous oxides

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030205853A1 (en) * 1998-11-04 2003-11-06 Peidong Yang Hierarchically ordered porous oxides
WO2002031002A1 (en) * 2000-10-11 2002-04-18 Uab Research Foundation Nanostructures formed through cyclohexadiene polymerization
WO2002055185A2 (en) * 2000-10-19 2002-07-18 Eidgenoess Tech Hochschule Block copolymers for multifunctional self-assembled systems
US20020164481A1 (en) * 2001-04-13 2002-11-07 Carlos Garcia Superparamagnetic nanostructured materials
JP2003146625A (en) * 2001-11-19 2003-05-21 National Institute Of Advanced Industrial & Technology Nonsilica-based mesostructure and method for manufacturing the same
CN1425706A (en) * 2003-01-14 2003-06-25 天津大学 Polyglycol block modified polyhexanolactone and its preparing method

Non-Patent Citations (14)

* Cited by examiner, † Cited by third party
Title
Self-assembled structures of block copolymers in selectivesolvents reproduced by lattice Monte Carlo simulation. J. Ding.Computational and Theoretical Polymer Science,Vol.11 . 2001
Self-assembled structures of block copolymers in selectivesolvents reproduced by lattice Monte Carlo simulation. J. Ding.Computational and Theoretical Polymer Science,Vol.11 . 2001 *
Self-assembly of block copolymers derived fromelastin-mimetic polypeptide sequences. Elizabeth R. Wright.Advanced Drug Delivery Reviews,Vol.54 . 2002
Self-assembly of block copolymers derived fromelastin-mimetic polypeptide sequences. Elizabeth R. Wright.Advanced Drug Delivery Reviews,Vol.54 . 2002 *
嵌段共聚物自组装及其在纳米材料制备中的应用(下). 袁建军等.高分子通报,第2卷. 2002
嵌段共聚物自组装及其在纳米材料制备中的应用(下). 袁建军等.高分子通报,第2卷. 2002 *
嵌段共聚物自组装在微纳制造领域的应用研究. 曹永智等.中国机械工程学会年会微纳制造技术应用研讨会. 2003
嵌段共聚物自组装在微纳制造领域的应用研究. 曹永智等.中国机械工程学会年会微纳制造技术应用研讨会. 2003 *
嵌段共聚物自组装模板-构造纳米结构的一种新方法. 曹永智等.纳米技术与精密工程,第1卷第1期. 2003
嵌段共聚物自组装模板-构造纳米结构的一种新方法. 曹永智等.纳米技术与精密工程,第1卷第1期. 2003 *
溶剂对SBS溶液浇铸膜形态结构及性能影响. 王铀等.高等学校化学学报,第21卷第7期. 2000
溶剂对SBS溶液浇铸膜形态结构及性能影响. 王铀等.高等学校化学学报,第21卷第7期. 2000 *
纳米结构的自组装高分子研究进展. 何光国等.功能材料,第34卷第3期. 2003
纳米结构的自组装高分子研究进展. 何光国等.功能材料,第34卷第3期. 2003 *

Also Published As

Publication number Publication date
CN1562730A (en) 2005-01-12

Similar Documents

Publication Publication Date Title
CN100429142C (en) Method for adjusting and controlling configuration of self-assembling block copolymer template oriented to nano micro machining
Gu et al. Pattern transfer using block copolymers
Fattakhova-Rohlfing et al. Three-dimensional titanium dioxide nanomaterials
Cheng et al. Templated self‐assembly of block copolymers: top‐down helps bottom‐up
US7655383B2 (en) Photochemical method for manufacturing nanometrically surface-decorated substrates
Finnemore et al. Nanostructured calcite single crystals with gyroid morphologies
JP2004209632A (en) Inorganic nanoporous membrane and its forming method
JP2007138052A (en) Polymeric thin film, preparation method of pattern base plate, pattern transcriptional body, and pattern vehicle for magnetic recording
CN102012633B (en) Method for making self-supporting structure of nano fluid system based on SU-8 photoresist
JP2013540569A (en) Porous thin film having pores and method for producing the same
CN102123941A (en) Microfine structure and process for producing same
KR101249981B1 (en) Three Dimensional Nanostructure and Method for Preparing the Same
JP2008231233A (en) Thin polymer film, patterned substrate, patterned medium for magnetic recording and their manufacturing methods
Hetherington et al. Porous single crystals of calcite from colloidal crystal templates: ACC Is not required for nanoscale templating
CN106006546A (en) Method for transferring and controlling nano-structure
Meldrum et al. Template‐Directed Control of Crystal Morphologies
CN107986224B (en) Large area multilevel surface folding structure and its preparation
JP2004315342A (en) HIGH-DENSITY COLUMNAR ZnO CRYSTAL FILM AND PROCESS FOR PRODUCING THE SAME
WO2006090579A1 (en) Process for producing honeycomb structure with isolated holes
CN101613076B (en) Method for preparing and duplicating three-dimensional micro-nano structure stamps in batches
CN107541488A (en) A kind of method based on Crystal structure guiding cell behavior
Mandal et al. Techniques for microscale patterning of zeolite-based thin films
Sharma et al. Microfabrication of carbon structures by pattern miniaturization in resorcinol-formaldehyde gel
Xiong et al. Honeycomb structured porous films prepared by the method of breath figure: history and development
CN108312659B (en) Pattern array of bubbles and its preparation method and application

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
C17 Cessation of patent right
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20081029