CN100424557C - Liquid crystal device, method of manufacturing liquid crystal device, and electronic apparatus - Google Patents
Liquid crystal device, method of manufacturing liquid crystal device, and electronic apparatus Download PDFInfo
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Abstract
The invention provides a liquid crystal device, wherein the color filter and element substrate thereof are adhered with each other by sealing material, and the liquid crystal is sealed. The color filter, as character of the invention, consists of each subpixel region with two lines and two rows of R, G, B and W (transparence) as one pixel region and has multi effective displaying regions with the pixel region collocated as matrix state. Chromatic layers corresponding to each colors are set in each R, G, B subpixel. Insulation layers for adjusting units thick are set by the color filter substrate on corresponding position of chromatic layer of each R, G and B reflection region and corresponding position of subpixel region of W (transparent), and the insulation layers are formed synchronously by the same technics and are consisted of same transparent resin materials.
Description
Technical field
The present invention relates to be used for the preferred liquid-crystal apparatus of demonstration and the electronic equipment of various information.
Background technology
In the past, the various electro-optical devices of liquid-crystal apparatus, organic electroluminescence display device and method of manufacturing same, plasm display device and field-emission display device etc. have been well-known.
As the liquid-crystal apparatus of the active matrix mode of the use thin film transistor (TFT) on-off elements such as (Thin Film Transistor:TFT) of this electro-optical device one example because have the advantage of high picture quality and high-speed response etc., so be widely used in TV and the portable information terminal etc.
The encapsulant that this liquid-crystal apparatus is following device substrate and subtend substrate by the frame shape comes bonding and enclose liquid crystal between two substrate to form, this device substrate forms or installs pixel electrode, TFT element, multi-strip scanning line (grid line), many signal line (source line) and drive IC etc., the color filter of three looks such as this subtend substrate formation R (red), G (green), B (indigo plant) and counter electrode etc.
In recent years, as this liquid-crystal apparatus, liquid-crystal apparatus with following structure is for well-known, this structure is except 3 looks of R, G, B, and 1 look of W (in vain) also is set, and comes display image (for example with pixel as a picture point (dot) 4 looks, referring to patent documentation 1). therefore, realize improving optical efficiency, not only keeping color reproduction but also improve brightness and power utilization efficient. also have,, with pixel other color filter is not set in white according to this patent documentation 1.
Patent documentation 1: the spy opens the 2004-102292 communique
Summary of the invention
The present invention makes in view of top viewpoint, its purpose is, the Transflective liquid-crystal apparatus and manufacture method and the electronic equipment that provide a kind of attenuating that can seek cost of products etc., use the of all kinds of R, G, B and W (transparent or white) and have many interstitial structures.
According to another viewpoint of the present invention, liquid-crystal apparatus have with the corresponding display pixel of W and with the 1 look corresponding display pixel different with above-mentioned W, the above-mentioned display pixel with above-mentioned 1 look corresponding possesses regional transmission and reflector space, and the above-mentioned display pixel of above-mentioned W only possesses regional transmission; Being characterized as of liquid-crystal apparatus possesses: substrate; The subtend substrate disposes with the aforesaid substrate subtend; Dyed layer is provided to the above-mentioned display pixel with above-mentioned 1 look corresponding of aforesaid substrate or above-mentioned subtend substrate; Unit (cell) thickness is adjusted layer, is arranged at aforesaid substrate or above-mentioned subtend substrate, is provided to the above-mentioned reflector space of the above-mentioned display pixel with above-mentioned 1 look corresponding and the above-mentioned regional transmission of above-mentioned W; And liquid crystal layer, be held on aforesaid substrate and above-mentioned subtend substrate, thickness corresponding to the above-mentioned regional transmission of the above-mentioned display pixel corresponding with above-mentioned 1 look, adjust the thickness of layer corresponding to said units thickness, thicker than thickness corresponding to the above-mentioned reflector space of the above-mentioned display pixel corresponding with above-mentioned 1 look.
In other modes of above-mentioned liquid-crystal apparatus, liquid-crystal apparatus have at least with the corresponding display pixel of W and with the 1 look corresponding display pixel different with above-mentioned W, above-mentioned display pixel with above-mentioned 1 look corresponding and the above-mentioned display pixel of above-mentioned W possess regional transmission and reflector space respectively; Being characterized as of liquid-crystal apparatus possesses: substrate; The subtend substrate disposes with the aforesaid substrate subtend; Dyed layer is provided to the above-mentioned display pixel with above-mentioned 1 look corresponding of aforesaid substrate or above-mentioned subtend substrate; Element thickness is adjusted layer, be arranged at aforesaid substrate or above-mentioned subtend substrate, and be provided to the above-mentioned reflector space of the above-mentioned display pixel of the above-mentioned regional transmission of above-mentioned display pixel of the above-mentioned at least reflector space of the above-mentioned display pixel with above-mentioned 1 look corresponding, above-mentioned W and above-mentioned W, the thickness of the above-mentioned reflector space of the above-mentioned display pixel of above-mentioned W is thicker than the thickness of the above-mentioned regional transmission of the above-mentioned display pixel of above-mentioned W; And liquid crystal layer, be held on aforesaid substrate and above-mentioned subtend substrate, thickness corresponding to the above-mentioned regional transmission of the above-mentioned display pixel of above-mentioned display pixel corresponding and above-mentioned W with above-mentioned 1 look, adjust the thickness of layer corresponding to said units thickness, thicker than thickness corresponding to the above-mentioned reflector space of the above-mentioned display pixel of above-mentioned display pixel corresponding and above-mentioned W with above-mentioned 1 look.
In other modes of above-mentioned liquid-crystal apparatus, it is characterized by, at above-mentioned display pixel corresponding and the above-mentioned display pixel of above-mentioned W, the said units thickness that is made of same material is set respectively adjusts layer with above-mentioned 1 look.
In other modes of above-mentioned liquid-crystal apparatus, it is characterized by, adjust layer thickness at the set said units thickness of the above-mentioned reflector space of the above-mentioned display pixel corresponding, be set at the set said units thickness of above-mentioned regional transmission and adjust the identical thickness of layer thickness at the above-mentioned display pixel of above-mentioned W with above-mentioned 1 look.
In other modes of above-mentioned liquid-crystal apparatus, it is characterized by, corresponding to the above-mentioned thickness of liquid crystal layer of the above-mentioned regional transmission of the above-mentioned display pixel corresponding, be set at and the identical thickness of above-mentioned thickness of liquid crystal layer corresponding to the above-mentioned regional transmission of above-mentioned W with above-mentioned 1 look.
In other modes of above-mentioned liquid-crystal apparatus, it is characterized by, corresponding with above-mentioned regional transmission above-mentioned dyed layer thickness is than thick with the corresponding above-mentioned dyed layer thickness of above-mentioned reflector space.
In other modes of above-mentioned liquid-crystal apparatus, it is characterized by, in aforesaid substrate and position above-mentioned subtend substrate either party, corresponding with above-mentioned reflector space, the reflection horizon that has the effect of light reflection is set.
According to a viewpoint of the present invention, have the liquid-crystal apparatus with R, G, B and W corresponding a plurality of display pixels of all kinds, possess: substrate; With the subtend substrate, by liquid crystal layer and the configuration of aforesaid substrate subtend; The above-mentioned display pixel of above-mentioned R, G, B has regional transmission and reflector space respectively, and the above-mentioned display pixel of above-mentioned W only has regional transmission, the above-mentioned thickness of liquid crystal layer corresponding with the above-mentioned regional transmission of above-mentioned R, G, B set than thick with the corresponding above-mentioned thickness of liquid crystal layer of the above-mentioned reflector space of above-mentioned R, G, B, at the above-mentioned reflector space of above-mentioned R, G, B and the above-mentioned regional transmission of above-mentioned W, element thickness is set adjusts layer.
Above-mentioned liquid-crystal apparatus has corresponding a plurality of display pixels of all kinds with R, G, B and W, and its structure possesses: substrate; With the subtend substrate, by liquid crystal layer and the configuration of this substrate subtend.
And, the display pixel of R, G, B has the regional transmission that carries out the transmission-type demonstration respectively and carries out the reflector space that reflection-type shows, the display pixel of W only has and carries out the regional transmission that transmission-type shows on the other hand. therefore, constituted the Transflective liquid-crystal apparatus that has with R, G, B and W corresponding display pixel of all kinds.
In addition, in this liquid-crystal apparatus, has following structure, be so-called many interstitial structures, this structure is: set than thick with R, G, thickness of liquid crystal layer that each reflector space of B is corresponding with R, G, thickness of liquid crystal layer that each regional transmission of B is corresponding, and set best optical characteristics at regional transmission and reflector space.
At this, generally speaking,,, high brightness and high-contrast have been realized by display pixel to the additional W of each display pixel of R, G, B for the liquid-crystal apparatus that has with R, G, B and W corresponding display pixel of all kinds.; because the display pixel at W does not have the look material; so for will with R; G; the thickness of liquid crystal layer (element thickness) of B regional transmission correspondence is set at and the thickness of liquid crystal layer (element thickness) corresponding with the regional transmission of W display pixel equates; the transparent resin layer of element thickness adjustment usefulness need be set in the position corresponding with the display pixel of W. in addition; in having the Transflective electro-optical device of many interstitial structures; generally in order to make optical characteristics even at regional transmission and reflector space; be formed with the resin bed that many gaps are used at reflector space, and the thickness of liquid crystal layer corresponding with regional transmission set than big with the corresponding thickness of liquid crystal layer of reflector space.
In having the Transflective liquid-crystal apparatus of this many interstitial structures, its constitute when having with R, G, B and W corresponding display pixel of all kinds (below, be called comparative example), need be in the position corresponding with the display pixel of W the transparent resin layer with element thickness adjustment usefulness, the resin bed that to use by many gaps that the material that is different from this transparent resin layer constitutes at each reflector space of R, G, each display pixel of B, be provided with respectively, technology is increased, causes that thus the cost of products of liquid-crystal apparatus increases.
This point is in above-mentioned liquid-crystal apparatus, particularly at the reflector space of R, G, B and the regional transmission of W, the element thickness that is made of the resin material with transparency etc. for example is set adjusts layer. here, preferably, the display pixel corresponding with W also can have redness, blueness, yellow, and in so-called XYZ chromaticity diagram, enter into (x, scope y)=(0.3～0.4,0.3～0.4).
Example according to the best, preferably, at above-mentioned R, G, the above-mentioned reflector space of B and the above-mentioned regional transmission of above-mentioned W, the element thickness that is made of same material is set respectively adjusts layer. that is to say, in the manufacture process of this liquid-crystal apparatus, be arranged at R, G, the element thickness of the element thickness adjustment layer of the reflector space of B and the regional transmission that is arranged at W is adjusted layer by same technology, adopt same material to form simultaneously. whereby, can with R, G, the position of each display pixel correspondence of B and at the display pixel of W, the element thickness that forms many interstitial structures and element thickness adjustment usefulness is respectively simultaneously adjusted layer. and its result is, compare with comparative example, the minimizing of technology can be sought, the cost of products of liquid-crystal apparatus can be lowered whereby.
According to other viewpoints of the present invention, have with the liquid-crystal apparatus of R, G, B and W corresponding a plurality of display pixels of all kinds and possess: substrate; With the subtend substrate, by liquid crystal layer and the configuration of aforesaid substrate subtend; Above-mentioned R, G, the above-mentioned display pixel of B and W has regional transmission and reflector space respectively, at above-mentioned R, G, the above-mentioned at least reflector space of B, the above-mentioned regional transmission of above-mentioned W and the reflector space of above-mentioned W, element thickness is set adjusts layer, and the thickness that the said units thickness of the above-mentioned reflector space of above-mentioned W is adjusted layer is thicker than the thickness of the said units thickness adjustment layer of the above-mentioned regional transmission of above-mentioned W, with above-mentioned R, G, the above-mentioned thickness of liquid crystal layer of the above-mentioned regional transmission correspondence of B and W is set to such an extent that compare and above-mentioned R corresponding to the thickness of said units thickness adjustment layer, G, the above-mentioned thickness of liquid crystal layer of the above-mentioned reflector space correspondence of B is thick.
Above-mentioned liquid-crystal apparatus has the corresponding display pixel of all kinds with R, G, B and W, and its structure possesses: the subtend substrate, it is by liquid crystal layer and the configuration of this substrate subtend. and, the display pixel of R, G, B and W has regional transmission and reflector space respectively. therefore, constituted the Transflective electro-optical device that has with R, G, B and W corresponding display pixel of all kinds.
In addition, in this liquid-crystal apparatus, particularly at R, G, the reflector space at least of B, the regional transmission of W and the reflector space of W are provided with element thickness and adjust layer, and the thickness that the element thickness of the reflector space of W is adjusted layer is thicker than the thickness of the element thickness adjustment layer of the regional transmission of W, with R, G, the thickness of liquid crystal layer of the regional transmission correspondence of B and W is adjusted the thickness of layer corresponding to element thickness, set to such an extent that compare and R, G, the thickness of liquid crystal layer of the reflector space correspondence of B is thick. at this, preferably, the display pixel corresponding with W also can have redness, blue, yellow, and in so-called XYZ chromaticity diagram, enter into (x, y)=(0.3～0.4,0.3～0.4) scope.
Example according to the best, preferably, at above-mentioned R, G, the above-mentioned reflector space of B and W and above-mentioned regional transmission, the element thickness that is made of same material is set respectively adjusts layer. that is to say, in the manufacture process of this liquid-crystal apparatus, be arranged at R, G, the element thickness of the element thickness adjustment layer of the reflector space at least of B (the perhaps both sides of reflector space and regional transmission) and regional transmission that is arranged at W and reflector space is adjusted layer by same technology, adopt same material to form simultaneously. whereby, in the manufacture process of this liquid-crystal apparatus, can with R, G, the position of each display pixel correspondence of B and W, forming many interstitial structures respectively simultaneously. its result is, compare with above-mentioned comparative example, the minimizing of technology can be sought, the cost of products of liquid-crystal apparatus can be lowered whereby.
In a mode of above-mentioned liquid-crystal apparatus, preferably, the set said units thickness of the above-mentioned reflector space of above-mentioned R, G, B is adjusted layer thickness, is set at the above-mentioned transparent set said units thickness of above-mentioned regional transmission and adjusts the identical size of layer thickness.
In other modes of above-mentioned liquid-crystal apparatus, the above-mentioned thickness of liquid crystal layer corresponding with the above-mentioned regional transmission of above-mentioned R, G, B, be set at and the above-mentioned thickness of liquid crystal layer identical size corresponding with the above-mentioned regional transmission of above-mentioned W. therefore, can set appropriate optical characteristics at each regional transmission of R, G, B and the regional transmission of W.
In other modes of above-mentioned liquid-crystal apparatus, in the position corresponding with the above-mentioned display pixel of above-mentioned R, G, B, setting and R, G, dyed layer that B is corresponding respectively, the above-mentioned dyed layer thickness of above-mentioned R, the G corresponding with above-mentioned regional transmission, the B above-mentioned dyed layer thickness more set than the above-mentioned reflector space of above-mentioned R, G, B is thick.
In this mode, with R, G, position that each display pixel of B is corresponding, setting and R, G, dyed layer that B is corresponding respectively.And, the dyed layer thickness of the R corresponding with regional transmission, G, the B dyed layer thickness more set than the reflector space of R, G, B is thick. therefore, can set appropriate optical characteristics at R, G, each reflector space of B and R, G, each regional transmission of B. in the example in the best, the R corresponding with regional transmission, G, each dyed layer thickness of B can be made as about about 2 times of the set dyed layer thickness of R, G, each reflector space of B.
In other modes of above-mentioned liquid-crystal apparatus,, the reflection horizon that has the effect of light reflection is set in aforesaid substrate and above-mentioned subtend substrate either party's the position corresponding with above-mentioned reflector space. therefore, can carry out reflection-type at reflector space and show.
According to other viewpoints of the present invention, have the display pixel corresponding or possess: substrate with the corresponding a plurality of display pixels of polychrome and with the liquid-crystal apparatus of the corresponding display pixel of W with 1 look; With the subtend substrate, by liquid crystal layer and the configuration of aforesaid substrate subtend; The above-mentioned display pixel corresponding or have regional transmission and reflector space respectively with the corresponding above-mentioned a plurality of display pixels of above-mentioned polychrome with above-mentioned 1 look, and the above-mentioned display pixel of above-mentioned W only has regional transmission, corresponding to the above-mentioned display pixel corresponding with above-mentioned 1 look or with the above-mentioned thickness of liquid crystal layer of the above-mentioned regional transmission of the corresponding above-mentioned a plurality of display pixels of above-mentioned polychrome, set than corresponding to the above-mentioned display pixel corresponding or thick with the above-mentioned thickness of liquid crystal layer of the above-mentioned reflector space of the corresponding above-mentioned a plurality of display pixels of above-mentioned polychrome with above-mentioned 1 look, the above-mentioned display pixel corresponding with above-mentioned 1 look or with the above-mentioned reflector space of the corresponding above-mentioned a plurality of display pixels of above-mentioned polychrome and the above-mentioned regional transmission of above-mentioned W, element thickness is set adjusts layer.
Above-mentioned liquid-crystal apparatus has display pixel with 1 look corresponding or a plurality of display pixels and with the W corresponding a plurality of display pixels corresponding with polychrome, and its structure possesses: substrate; With the subtend substrate, by liquid crystal layer and the configuration of this substrate subtend.
And, the display pixel corresponding or have respectively with the corresponding a plurality of display pixels of polychrome and to carry out the regional transmission that transmission-type shows and to carry out the reflector space that reflection-type shows with 1 look, the display pixel of W only has and carries out the regional transmission that transmission-type shows on the other hand. therefore, constituted have the display pixel corresponding with 1 look or with the corresponding a plurality of display pixels of polychrome and with the Transflective liquid-crystal apparatus of the corresponding display pixel of W.
In addition, in this liquid-crystal apparatus, has following structure, be so-called many interstitial structures, this structure is: corresponding to the display pixel corresponding with 1 look or with the thickness of liquid crystal layer of each regional transmission of the corresponding a plurality of display pixels of polychrome, set than corresponding to the display pixel corresponding or thick, set best optical characteristics at regional transmission and reflector space with the thickness of liquid crystal layer of each reflector space of the corresponding a plurality of display pixels of polychrome with 1 look.
Particularly, in this liquid-crystal apparatus, the display pixel corresponding with 1 look or with the reflector space of the corresponding a plurality of display pixels of polychrome and the regional transmission of W, the element thickness that is made of the resin material with transparency etc. for example is set adjusts layer. at this, preferably, the display pixel corresponding with W also can have redness, blueness, yellow, and enters into (x in so-called XYZ chromaticity diagram, y)=(0.3～0.4,0.3～0.4) scope.
That is to say, in the manufacture process of this liquid-crystal apparatus, the display pixel corresponding or adjust the set element thickness of the regional transmission of layer and W with the set element thickness of each reflector space of the corresponding a plurality of display pixels of polychrome and adjust layer by same technology with 1 look, adopt same material to form simultaneously. therefore, can be corresponding to the display pixel corresponding or with the position of the corresponding a plurality of display pixels of polychrome and at the display pixel of W with 1 look, the element thickness that forms many interstitial structures and element thickness adjustment usefulness is respectively simultaneously adjusted layer. and its result is, compare with above-mentioned comparative example, the minimizing of technology can be sought, the cost of products of liquid-crystal apparatus can be lowered whereby.
According to other viewpoints of the present invention, have the display pixel corresponding with 1 look or with the corresponding a plurality of display pixels of polychrome and with the liquid-crystal apparatus of the corresponding display pixel of W, possess: substrate; With the subtend substrate, by liquid crystal layer and the configuration of aforesaid substrate subtend; The above-mentioned display pixel corresponding or have regional transmission and reflector space respectively with corresponding above-mentioned a plurality of display pixels of above-mentioned polychrome and the above-mentioned display pixel of W with above-mentioned 1 look, the above-mentioned display pixel corresponding with above-mentioned 1 look or with the above-mentioned at least reflector space of the corresponding above-mentioned a plurality of display pixels of above-mentioned polychrome, the above-mentioned regional transmission of above-mentioned W and the reflector space of above-mentioned W, element thickness is set adjusts layer, and the thickness that the said units thickness of the above-mentioned reflector space of above-mentioned W is adjusted layer is thicker than the thickness of the said units thickness adjustment of the above-mentioned regional transmission of above-mentioned W, corresponding to the above-mentioned display pixel corresponding with above-mentioned 1 look or with the above-mentioned regional transmission of the corresponding above-mentioned a plurality of display pixels of above-mentioned polychrome and the above-mentioned regional transmission above-mentioned thickness of liquid crystal layer separately of W, adjust the thickness of layer corresponding to said units thickness, set than corresponding to the above-mentioned display pixel corresponding or thick with the above-mentioned reflector space above-mentioned thickness of liquid crystal layer separately of the corresponding above-mentioned a plurality of display pixels of above-mentioned polychrome with above-mentioned 1 look.
Above-mentioned liquid-crystal apparatus has: display pixel with 1 look corresponding or a plurality of display pixels and with the W corresponding display pixel corresponding with polychrome, and its structure possesses: the subtend substrate, it is by liquid crystal layer and the configuration of this substrate subtend. and, the display pixel corresponding or have regional transmission and reflector space respectively with corresponding a plurality of display pixels of polychrome and the display pixel of W with 1 look. therefore, constituted have the display pixel corresponding with 1 look or with the corresponding a plurality of display pixels of polychrome and with the Transflective electro-optical device of the corresponding display pixel of W.
In addition, in this liquid-crystal apparatus, particularly the display pixel corresponding with 1 look or with the reflector space at least of the corresponding a plurality of display pixels of polychrome, the regional transmission of W and the reflector space of W, element thickness is set adjusts layer, and the thickness that the element thickness of the reflector space of W is adjusted layer is thicker than the thickness of the element thickness adjustment layer of the regional transmission of W, corresponding to the display pixel corresponding with 1 look or with each regional transmission of the corresponding a plurality of display pixels of polychrome and the regional transmission thickness of liquid crystal layer separately of W, adjust the thickness of layer corresponding to element thickness, set than corresponding to the display pixel corresponding or thick with the reflector space thickness of liquid crystal layer separately of the corresponding a plurality of display pixels of polychrome with 1 look. at this, preferably, the display pixel corresponding with W also can have redness, blue, yellow, and in so-called XYZ chromaticity diagram, enter into (x, y)=(0.3～0.4,0.3～0.4) scope.
That is to say, in the manufacture process of this liquid-crystal apparatus, adjust layer at the display pixel corresponding or with the set element thickness of the reflector space at least (the perhaps both sides of reflector space and regional transmission) of the corresponding a plurality of display pixels of polychrome with 1 look, adjust layer with regional transmission and the set element thickness of reflector space of W, by same technology, adopt same material to form simultaneously. therefore, in the manufacture process of this liquid-crystal apparatus, can corresponding to the display pixel corresponding with 1 look or with the position of the display pixel of corresponding a plurality of display pixels of polychrome and W, forming many interstitial structures respectively simultaneously. its result is, compare with above-mentioned comparative example, the minimizing of technology can be sought, the cost of products of liquid-crystal apparatus can be lowered whereby.
In addition, can also constitute and possess the electronic equipment that above-mentioned liquid-crystal apparatus is used as display part.
According to other viewpoints of the present invention, it is a kind of manufacture method of liquid-crystal apparatus, this liquid-crystal apparatus have at least with the corresponding display pixel of W and with the 1 look corresponding display pixel different with above-mentioned W, the above-mentioned display pixel with above-mentioned 1 look corresponding possesses regional transmission and reflector space, and the above-mentioned display pixel of above-mentioned W possesses regional transmission at least, corresponding to the thickness of liquid crystal layer of the above-mentioned regional transmission of the above-mentioned display pixel corresponding, set thicklyer than thickness of liquid crystal layer corresponding to the above-mentioned reflector space of the above-mentioned display pixel corresponding with above-mentioned 1 look with above-mentioned 1 look; The manufacture method of this liquid-crystal apparatus is characterized by, and comprising: dyed layer forms technology, is used on matrix material, and the above-mentioned display pixel with above-mentioned 1 look corresponding formed dyed layer; Adjust layer with element thickness and form technology, be used on above-mentioned matrix material, above-mentioned regional transmission at the above-mentioned display pixel of the above-mentioned reflector space of the above-mentioned display pixel with above-mentioned 1 look corresponding and above-mentioned W forms the element thickness that is made of transparent material simultaneously and adjusts layer.
In a mode of above-mentioned manufacture method for liquid crystal device, it is characterized by, the above-mentioned display pixel of above-mentioned W does not possess above-mentioned reflector space.
In a mode of above-mentioned manufacture method for liquid crystal device, it is characterized by, the above-mentioned display pixel of above-mentioned W possesses reflector space, thicker corresponding to the thickness of liquid crystal layer of the above-mentioned regional transmission of the above-mentioned display pixel of above-mentioned W than thickness of liquid crystal layer corresponding to the above-mentioned reflector space of the above-mentioned display pixel of above-mentioned W, said units thickness is adjusted layer and is formed technology on above-mentioned matrix material, above-mentioned reflector space at the above-mentioned display pixel corresponding with above-mentioned 1 look, the above-mentioned regional transmission of the above-mentioned display pixel of above-mentioned W and above-mentioned reflector space form said units thickness simultaneously and adjust layer.
In a mode of above-mentioned manufacture method for liquid crystal device, it is characterized by, above-mentioned dyed layer forms technology and forms opening at the above-mentioned dyed layer that is positioned at above-mentioned reflector space.
In a mode of above-mentioned manufacture method for liquid crystal device, it is characterized by, said units thickness is adjusted layer and is formed technology, and said units thickness is adjusted layer, forms the thickness identical with above-mentioned dyed layer.
In a mode of above-mentioned manufacture method for liquid crystal device, it is characterized by, said units thickness adjustment layer forms technology and comprises the layer thickness adjusting process, this layer thickness adjusting process comprises: the resist coated technique, above-mentioned display pixel at above-mentioned W reaches on the above-mentioned dyed layer of the above-mentioned display pixel with above-mentioned 1 look corresponding, the coating resist; The 1st exposure technology after above-mentioned resist being carried out 1 exposure by the 1st mask, implement to be developed and etch processes, and above-mentioned the 1st mask comprises with the complete exposure area of the complete transmission of light and with the complete lightproof area of the complete shading of above-mentioned light; And the 2nd exposure technology, after implementing above-mentioned resist coated technique once more, by the 2nd mask to above-mentioned resist carry out 1 time the exposure after, implement to develop and etch processes, above-mentioned the 2nd mask comprises above-mentioned complete exposure area and above-mentioned complete lightproof area, constitutes different with above-mentioned the 1st mask; Above-mentioned layer thickness adjusting process to the set said units thickness of the above-mentioned regional transmission of the above-mentioned W of major general is adjusted the thickness of above-mentioned dyed layer of the above-mentioned regional transmission of layer and the above-mentioned display pixel with above-mentioned 1 look corresponding, is set at identical.
In a mode of above-mentioned manufacture method for liquid crystal device, it is characterized by, said units thickness adjustment layer forms technology and comprises the layer thickness adjusting process, this layer thickness adjusting process comprises: the resist coated technique, be used for reaching on the above-mentioned dyed layer of the above-mentioned display pixel corresponding the coating resist at the above-mentioned display pixel of above-mentioned W with above-mentioned 1 look; Shadow tone (halftone) exposure technology, after above-mentioned resist being carried out at least 1 exposure by following mask, implement to develop and etch processes, this mask comprises: with the complete exposure area of the complete transmission of light, with the complete lightproof area of the complete shading of above-mentioned light and the halftone exposure zone that is made of semi-transmissive film; Above-mentioned layer thickness adjusting process is adjusted the thickness of above-mentioned dyed layer of the above-mentioned regional transmission of layer and the above-mentioned display pixel with above-mentioned 1 look corresponding at the set said units thickness of the above-mentioned regional transmission of above-mentioned W to the major general, be set at identical.
In a mode of above-mentioned manufacture method for liquid crystal device, it is characterized by, form between technology and the said units thickness adjustment layer formation technology at above-mentioned dyed layer, have diaphragm and form technology, be used on the above-mentioned dyed layer of the above-mentioned display pixel corresponding, forming diaphragm with above-mentioned 1 look; Said units thickness is adjusted layer and is formed technology on the said protection film in the above-mentioned reflective display region territory of the above-mentioned display pixel of above-mentioned W and the above-mentioned display pixel with above-mentioned 1 look corresponding; form said units thickness and adjust layer; above-mentioned layer thickness adjusting process is adjusted the thickness of above-mentioned dyed layer of the above-mentioned regional transmission of layer and the above-mentioned display pixel with above-mentioned 1 look corresponding at the set said units thickness of the above-mentioned regional transmission of above-mentioned W to the major general, be set at identical.
In a mode of above-mentioned manufacture method for liquid crystal device, it is characterized by, the preceding technology that forms technology as above-mentioned dyed layer has reflection horizon formation technology, is used on above-mentioned matrix material, and above-mentioned reflector space is formed the reflection horizon.
According to other viewpoints of the present invention, liquid-crystal apparatus with R, G, have regional transmission and reflector space in B corresponding respectively a plurality of display pixels of all kinds, and in the display pixel corresponding, only has regional transmission with W, and with above-mentioned R, G, the thickness of liquid crystal layer of the above-mentioned regional transmission correspondence of B is set to such an extent that compare and above-mentioned R, G, the thickness of liquid crystal layer of the above-mentioned reflector space correspondence of B is big, the manufacture method of this liquid-crystal apparatus, comprise: dyed layer forms technology, be used on matrix material, should form and above-mentioned R, G, the zone of the above-mentioned display pixel of the above-mentioned correspondence of all kinds of B, formation has above-mentioned R, G, the dyed layer above-mentioned of all kinds of B; Adjust layer with element thickness and form a technology, be used on above-mentioned matrix material, the zone at the above-mentioned regional transmission of above-mentioned reflector space that should form above-mentioned R, G, B and above-mentioned W forms the element thickness that is made of transparent material simultaneously and adjusts layer.
The manufacture method of above-mentioned liquid-crystal apparatus is the manufacture method with liquid-crystal apparatus of many interstitial structures, this liquid-crystal apparatus with R, G, B corresponding respectively display pixel of all kinds in have regional transmission and reflector space, and in the display pixel corresponding, only have regional transmission, and the thickness of liquid crystal layer corresponding with the regional transmission of R, G, B set than big with the corresponding thickness of liquid crystal layer of the above-mentioned reflector space of R, G, B with W.
The manufacture method of this liquid-crystal apparatus at first forms technology by dyed layer, on the matrix material that constitutes by materials such as glass or quartz, should formation and R, G, the B zone of corresponding a plurality of display pixels respectively of all kinds, formation has R, G, B dyed layer of all kinds. then, adjust layer by element thickness and form technology, on matrix material, zone at the regional transmission of reflector space that should form R, G, B and W, form the element thickness that constitutes by transparent material (for example, having transparent resin material etc.) simultaneously and adjust layer.
Whereby, can be in the position corresponding and at the display pixel of W with R, G, each display pixel of B, the element thickness that forms many interstitial structures and element thickness adjustment usefulness is respectively simultaneously adjusted layer. thereby, compare with the manufacture method for liquid crystal device that above-mentioned comparative example is related, the minimizing of technology can be sought, and the cost of products of liquid-crystal apparatus can be lowered.
According to other viewpoints of the present invention, liquid-crystal apparatus with R, G, B and W corresponding respectively a plurality of display pixels of all kinds in have regional transmission and reflector space, and the thickness of liquid crystal layer corresponding with the above-mentioned regional transmission of above-mentioned R, G, B and W set than thick with the corresponding thickness of liquid crystal layer of the above-mentioned reflector space of above-mentioned R, G, B and W; The manufacture method of this liquid-crystal apparatus comprises: dyed layer forms technology, is used on matrix material, and the zone forming with the above-mentioned of all kinds corresponding above-mentioned display pixel of above-mentioned R, G, B forms the dyed layer above-mentioned of all kinds with above-mentioned R, G, B; Adjust layer with element thickness and form technology, be used on above-mentioned matrix material, in the zone of above-mentioned regional transmission that should form the above-mentioned reflector space of above-mentioned R, G, B, above-mentioned W and above-mentioned reflector space, form the element thickness that constitutes by transparent material simultaneously and adjust layer.
The manufacture method of above-mentioned liquid-crystal apparatus is the manufacture method for liquid crystal device with many interstitial structures, this liquid-crystal apparatus with R, G, B and W corresponding respectively a plurality of display pixels of all kinds in have regional transmission and reflector space, and the thickness of liquid crystal layer corresponding with each regional transmission of R, G, B and W set than thick with the corresponding thickness of liquid crystal layer of each reflector space of R, G, B and W.
The manufacture method of this liquid-crystal apparatus at first forms technology by dyed layer, on the matrix material that constitutes by materials such as glass or quartz, should formation and the zone of R, G, B corresponding display pixel of all kinds, formation has R, G, B dyed layer of all kinds. then, adjust layer by element thickness and form technology, on matrix material, should form R, G, each reflector space of B, transparent regional transmission and the zone of reflector space, form the element thickness that constitutes by transparent material (for example, having transparent resin material etc.) simultaneously and adjust layer.
Whereby, can form many interstitial structures respectively simultaneously in the position corresponding with each display pixel of R, G, B and W. thereby, compare with the manufacture method for liquid crystal device that above-mentioned comparative example is related, can seek the minimizing of technology, can lower the cost of products of liquid-crystal apparatus.
In a mode of above-mentioned manufacture method for liquid crystal device, above-mentioned dyed layer forms technology at each self-forming opening of the above-mentioned dyed layer that is positioned at above-mentioned R, the G of above-mentioned reflector space, B. thereby, can set appropriate optical characteristics at R, G, each reflector space of B and R, G, each regional transmission of B.
In other modes of above-mentioned manufacture method for liquid crystal device, said units thickness is adjusted layer formation technology can adjust layer with said units thickness, form the thickness identical with the above-mentioned dyed layer of above-mentioned R, G, B.
In other modes of above-mentioned manufacture method for liquid crystal device, said units thickness adjustment layer forms technology and comprises the layer thickness adjusting process, this layer thickness adjusting process comprises: the resist coated technique, be used for to adjusting the thickness of layer than above-mentioned R at said units thickness, G, when the above-mentioned dyed layer thickness of B is thick, at least at above-mentioned R, G, the above-mentioned reflector space of B, the formed separately said units thickness of the above-mentioned regional transmission of above-mentioned W and/or above-mentioned reflector space is adjusted on the layer, and at above-mentioned R, G, the formed above-mentioned R of the above-mentioned regional transmission of B, G, on the above-mentioned dyed layer of B, the coating resist; The 1st exposure technology is used for implement developing and etch processes after above-mentioned resist being carried out 1 exposure by the 1st mask, and the 1st mask comprises with the complete exposure area of the complete transmission of light and with the complete lightproof area of the complete shading of above-mentioned light; With the 2nd exposure technology, be used for after implementing above-mentioned resist coated technique once more, by the 2nd mask to above-mentioned resist carry out 1 time the exposure after, implement to develop and etch processes, the 2nd mask comprises above-mentioned complete exposure area and above-mentioned complete lightproof area, and formation is different with above-mentioned the 1st mask; Above-mentioned layer thickness adjusting process is adjusted the above-mentioned dyed layer thickness of the above-mentioned regional transmission of layer and above-mentioned R, G, B at the set said units thickness of the above-mentioned regional transmission of above-mentioned W to the major general, is set at identical.
In this mode, element thickness adjustment layer forms technology and comprises the layer thickness adjusting process. and, the layer thickness adjusting process comprises the resist coated technique, the 1st exposure technology and the 2nd exposure technology. at first, the resist coated technique is adjusted the thickness of layer than above-mentioned R at said units thickness, G, when the above-mentioned dyed layer thickness of B is thick, at least at R, G, each reflector space of B, the formed separately element thickness of the regional transmission of W and/or reflector space is adjusted on the layer, and at R, G, the formed R of each regional transmission of B, G, on each dyed layer of B, coating resist (photoresist).
Then, the 1st exposure technology is after carrying out 1 exposure to resist by the 1st mask, implement to develop and etch processes, the 1st mask comprises with the complete exposure area of light (light of ultraviolet ray or i ray etc., below identical) transmission fully and with the complete lightproof area of the complete shading of light.
Then, the 2nd exposure technology is after implementing the resist coated technique once more, by the 2nd mask resist (photoresist) is carried out 1 exposure, implement afterwards to develop and etch processes, the 2nd mask comprises complete exposure area and complete lightproof area, and constitute different with the 1st mask. by these a series of technologies (double exposure method), the layer thickness adjusting process is adjusted layer and R at the set element thickness of the regional transmission of W to the major general, G, the dyed layer thickness of each regional transmission of B, be set at identical. therefore, can be at R, G, the regional transmission of each regional transmission of B and W is set appropriate optical characteristics for.
In other modes of above-mentioned manufacture method for liquid crystal device, said units thickness adjustment layer forms technology and comprises the layer thickness adjusting process, this layer thickness adjusting process comprises: the resist coated technique, be used for adjusting the thickness of layer than above-mentioned R at said units thickness, G, when the above-mentioned dyed layer thickness of B is thick, at least at above-mentioned R, G, the above-mentioned reflector space of B, the formed separately said units thickness of the above-mentioned regional transmission of above-mentioned W and/or above-mentioned reflector space is adjusted on the layer, and at above-mentioned R, G, the formed above-mentioned R of the above-mentioned regional transmission of B, G, on the above-mentioned dyed layer of B, the coating resist; With halftone exposure technology, be used for after above-mentioned resist being carried out at least 1 exposure by mask, implement to develop and etch processes, this mask comprises: with the complete exposure area of the complete transmission of light, with the complete lightproof area of the complete shading of above-mentioned light and the halftone exposure zone with semi-transmissive film; Above-mentioned layer thickness adjusting process is adjusted the above-mentioned dyed layer thickness of the above-mentioned regional transmission of layer and above-mentioned R, G, B at the set said units thickness of the above-mentioned regional transmission of above-mentioned W to the major general, is set at identical.
In this mode, element thickness adjustment layer forms technology and comprises the layer thickness adjusting process.And the layer thickness adjusting process comprises resist coated technique and halftone exposure technology.
At first, when the thickness that the resist coated technique is adjusted layer at said units thickness is thicker than the above-mentioned dyed layer thickness of above-mentioned R, G, B, at least regional transmission and/or the formed separately element thickness of reflector space at R, G, each reflector space of B, W are adjusted on the layer, and on each dyed layer of the formed R of each regional transmission of R, G, B, G, B, coating resist (photoresist).
Then, halftone exposure technology is after carrying out 1 exposure at least to resist by mask, implement to develop and etch processes, this mask comprises: with the complete exposure area of the complete transmission of light, with the complete lightproof area of the complete shading of light and halftone exposure zone with semi-transmissive film. by these a series of technologies (halftone exposure method), the layer thickness adjusting process is adjusted layer and R at the set element thickness of the regional transmission of W to the major general, G, each dyed layer thickness of each regional transmission of B, be set at identical. therefore, can be at R, G, the regional transmission of each regional transmission of B and W is set appropriate optical characteristics for.
In other modes of above-mentioned manufacture method for liquid crystal device, the preceding technology that forms technology as above-mentioned dyed layer has reflection horizon formation technology, is used on above-mentioned matrix material, in the above-mentioned reflector space formation reflection horizon of above-mentioned R, G, B.Therefore, can carry out at the reflector space of R, G, B showing with corresponding reflection-type of all kinds.
In other modes of above-mentioned manufacture method for liquid crystal device, the preceding technology that forms technology as above-mentioned dyed layer has reflection horizon formation technology, be used on above-mentioned matrix material, forming the reflection horizon at the above-mentioned reflector space of above-mentioned R, G, B and the above-mentioned reflector space of above-mentioned W. therefore, can carry out at each reflector space of R, G, B and W showing with corresponding reflection-type of all kinds.
According to other viewpoints of the present invention, it is a kind of manufacture method of liquid-crystal apparatus, this liquid-crystal apparatus in the display pixel corresponding with 1 look or with the corresponding a plurality of display pixels of polychrome in have regional transmission and reflector space respectively, and in the display pixel corresponding, only has regional transmission with W, and corresponding to the above-mentioned display pixel corresponding with above-mentioned 1 look or with the above-mentioned regional transmission thickness of liquid crystal layer separately of the corresponding above-mentioned a plurality of display pixels of above-mentioned polychrome, set than corresponding to the above-mentioned display pixel corresponding or thick with the above-mentioned reflector space thickness of liquid crystal layer separately of the corresponding above-mentioned a plurality of display pixels of above-mentioned polychrome with above-mentioned 1 look, the manufacture method of this liquid-crystal apparatus comprises: dyed layer forms technology, be used on matrix material, in the zone that should form the above-mentioned display pixel corresponding, form dyed layer with above-mentioned 1 look or above-mentioned polychrome with above-mentioned 1 look or above-mentioned polychrome; Adjust layer with element thickness and form technology, be used on above-mentioned matrix material, forming the above-mentioned display pixel corresponding or reaching the zone of the above-mentioned regional transmission of above-mentioned W separately, form the element thickness that constitutes by transparent material simultaneously and adjust layer with the above-mentioned reflector space of the corresponding above-mentioned a plurality of display pixels of above-mentioned polychrome with above-mentioned 1 look.
The manufacture method of above-mentioned liquid-crystal apparatus is the manufacture method with liquid-crystal apparatus of many interstitial structures, this liquid-crystal apparatus in the display pixel corresponding with 1 look or with the corresponding a plurality of display pixels of polychrome in have regional transmission and reflector space respectively, and in the display pixel corresponding, only has regional transmission with W, and corresponding to the display pixel corresponding with 1 look or with the regional transmission thickness of liquid crystal layer separately of the corresponding a plurality of display pixels of polychrome, set than corresponding to the display pixel corresponding or thick with the reflector space thickness of liquid crystal layer separately of the corresponding a plurality of display pixels of polychrome with 1 look.
The manufacture method of this liquid-crystal apparatus at first forms technology by dyed layer, on the matrix material that constitutes by materials such as glass or quartz, should form the display pixel corresponding with 1 look or with the zone of the corresponding a plurality of display pixels of polychrome, formation has the dyed layer of 1 look or polychrome. then, adjust layer by element thickness and form technology, on matrix material, should form the display pixel corresponding or reach the zone of the regional transmission of W separately with the reflector space of the corresponding a plurality of display pixels of polychrome with 1 look, form the element thickness that constitutes by transparent material (for example, having transparent resin material etc.) simultaneously and adjust layer.
Therefore, can corresponding to the display pixel corresponding with 1 look or with the corresponding a plurality of display pixels of polychrome separately the position and at the display pixel of W, the element thickness that forms many interstitial structures and element thickness adjustment usefulness is respectively simultaneously adjusted layer. thereby, compare with the manufacture method for liquid crystal device that above-mentioned comparative example is related, the minimizing of technology can be sought, and the cost of products of liquid-crystal apparatus can be lowered.
According to other viewpoints of the present invention, it is a kind of manufacture method of liquid-crystal apparatus, this liquid-crystal apparatus in the display pixel corresponding with 1 look or with the corresponding a plurality of display pixels of polychrome in and with the corresponding display pixel of W in, have regional transmission and reflector space respectively, and corresponding to the above-mentioned display pixel corresponding with above-mentioned 1 look or with the above-mentioned regional transmission thickness of liquid crystal layer separately of the above-mentioned display pixel of corresponding above-mentioned a plurality of display pixels of above-mentioned polychrome and W, set than corresponding to the above-mentioned display pixel corresponding or thick with the above-mentioned reflector space thickness of liquid crystal layer separately of the above-mentioned display pixel of corresponding above-mentioned a plurality of display pixels of above-mentioned polychrome and W with above-mentioned 1 look, the manufacture method of this liquid-crystal apparatus comprises: dyed layer forms technology, be used on matrix material, should form the above-mentioned display pixel corresponding with above-mentioned 1 look or with the zone of the corresponding above-mentioned a plurality of display pixels of above-mentioned polychrome, form dyed layer with above-mentioned 1 look or above-mentioned polychrome; Adjust layer with element thickness and form technology, be used on above-mentioned matrix material, should form the above-mentioned display pixel corresponding with above-mentioned 1 look or with the above-mentioned reflector space of the corresponding above-mentioned a plurality of display pixels of above-mentioned polychrome separately and the zone of the above-mentioned regional transmission of above-mentioned W and above-mentioned reflector space, form the element thickness that constitutes by transparent material simultaneously and adjust layer.
The manufacture method of above-mentioned liquid-crystal apparatus is the manufacture method with liquid-crystal apparatus of many interstitial structures, this liquid-crystal apparatus in the display pixel corresponding with 1 look or with the corresponding a plurality of display pixels of polychrome in and with the corresponding display pixel of W in, have regional transmission and reflector space respectively, and corresponding to the display pixel corresponding with 1 look or with the regional transmission thickness of liquid crystal layer separately of the display pixel of corresponding a plurality of display pixels of polychrome and W, set than corresponding to the display pixel corresponding or thick with the reflector space thickness of liquid crystal layer separately of the display pixel of corresponding a plurality of display pixels of polychrome and W with 1 look.
The manufacture method of this liquid-crystal apparatus at first forms technology by dyed layer, on the matrix material that constitutes by materials such as glass or quartz, should form the display pixel corresponding with 1 look or with the zone of the corresponding a plurality of display pixels of polychrome, form dyed layer with 1 look or polychrome.Then, adjust layer by element thickness and form technology, on matrix material, should form the display pixel corresponding with 1 look or with the reflector space of the corresponding a plurality of display pixels of polychrome separately and the zone of the regional transmission of W and reflector space, form the element thickness that constitutes by transparent material (for example, having transparent resin material etc.) simultaneously and adjust layer.
Therefore, can corresponding to the display pixel corresponding with 1 look or with the position of the display pixel of corresponding a plurality of display pixels of polychrome and W, form many interstitial structures respectively simultaneously. thereby, compare with the manufacture method for liquid crystal device that above-mentioned comparative example is related, the minimizing of technology can be sought, the cost of products of liquid-crystal apparatus can be lowered.
Description of drawings
Fig. 1 is the planimetric map of the related liquid-crystal apparatus structure of modal representation the 1st embodiment of the present invention.
Fig. 2 is the planimetric map of 1 dot structure that comprises R, G, B and W of expression the 1st embodiment.
Fig. 3 is R, the G of expression the 1st embodiment, the planimetric map of each sub-pixel structure of B.
Fig. 4 is cutting line A-A ' in Fig. 3 and the fragmentary cross-sectional view of cutting line B-B '.
Fig. 5 is the fragmentary cross-sectional view of the cutting line B-B ' in Fig. 3.
Fig. 6 is the fragmentary cross-sectional view of the cutting line C-C ' in Fig. 2.
Fig. 7 is the planimetric map of 1 dot structure that comprises R, G, B and W of expression the 2nd embodiment.
Fig. 8 is the planimetric map of each sub-pixel structure of R, G, the B of expression the 2nd embodiment.
Fig. 9 is cutting line D-D ' in Fig. 8 and the fragmentary cross-sectional view of cutting line E-E '.
Figure 10 is the fragmentary cross-sectional view of the cutting line F-F ' in Fig. 7.
Figure 11 is the fragmentary cross-sectional view of representing the structure after the liquid-crystal apparatus distortion of the 1st embodiment.
Figure 12 is the fragmentary cross-sectional view of representing the structure after the liquid-crystal apparatus distortion of the 2nd embodiment.
Figure 13 is the planimetric map of various variation that expression comprises 1 dot structure of R, G, B and W.
Figure 14 is the planimetric map of various variation that expression comprises 1 dot structure of R, G, B and W.
Figure 15 is the process flow diagram of manufacture method of the liquid-crystal apparatus of expression the 1st and the 2nd embodiment.
Figure 16 is the process flow diagram of the filter substrate manufacture method of expression the 1st embodiment.
Figure 17 is the sectional view of the related filter substrate manufacturing process of expression the 1st embodiment.
Figure 18 is the sectional view of the related filter substrate manufacturing process of expression the 1st embodiment.
Figure 19 is the sectional view of the related filter substrate manufacturing process of expression the 1st embodiment.
Figure 20 is the sectional view of the related filter substrate manufacturing process of expression the 1st embodiment.
Figure 21 is the sectional view of the related filter substrate manufacturing process of expression the 1st embodiment.
Figure 22 is the process flow diagram of manufacture method of the filter substrate of expression the 2nd embodiment.
Figure 23 is the sectional view of the related filter substrate manufacturing process of expression the 2nd embodiment.
Figure 24 is the sectional view of the related filter substrate manufacturing process of expression the 2nd embodiment.
Figure 25 is the sectional view of the related filter substrate manufacturing process of expression the 2nd embodiment.
Figure 26 is the sectional view of the related filter substrate manufacturing process of expression variation etc.
Figure 27 is to use the circuit block diagram of the electronic equipment of liquid-crystal apparatus of the present invention.
Figure 28 is to use the example of the electronic equipment of liquid-crystal apparatus of the present invention.
Symbol description
4 liquid crystal layers, 5 reflecting electrodes, 6 dyed layers, 8 common electrodes, 10 pixel electrodes, 18 element thickness adjustment insulation courses, 21TFT element, 32 source lines, 33 grid lines, 62 data lines, the 63TFD element, 64 scan electrodes, 65 reflection horizon, 70,75,76,79 masks, 40 drive IC, 41FPC, 91,93 device substrates, 92,94,96 filter substrates, 100,200 liquid-crystal apparatus.
Embodiment
Below, with reference to accompanying drawing, describe for being used for implementing best mode of the present invention. also have, following various embodiments are that the present invention is used for mode as the liquid-crystal apparatus of electro-optical device one example.
[the 1st embodiment]
The 1st embodiment is used for following liquid-crystal apparatus with the present invention, and this liquid-crystal apparatus is to use the device as the driven with active matrix mode of the a-Si type TFT of three terminal components, one example (Thin Film Transistor, thin film transistor (TFT)) element.
(structure of liquid-crystal apparatus)
At first, referring to figs. 1 through Fig. 5,, describe for structure of the related liquid-crystal apparatus 100 of the present invention's the 1st embodiment etc.
Fig. 1 is the planimetric map of related liquid-crystal apparatus 100 schematic configuration of modal representation the present invention the 1st embodiment. in Fig. 1, in accompanying drawing front side (side of watching) and in accompanying drawing depth side, dispose filter substrate 92 and device substrate 91. respectively in addition, in Fig. 1, accompanying drawing vertical (column direction) is defined as the Y direction, and accompanying drawing horizontal (line direction) is defined as directions X. in addition, in Fig. 1, with R (red), G (green), B (indigo plant), 1 subpixel area SG of each region representation that W (transparent) is corresponding, and and R, G, B, 2 row, the 2 row subpixel area SG of W correspondence represent 1 pixel region AG.
In the present invention, pixel region AG is by R, G, B, W constitutes, be widely used in the past by R, G, the structure of 1 pixel region of B formation is different. for this reason, in the present invention, adopt and different operative technique (rendering that describe in the past, play up) show. play up and use following image processing techniques, this image processing techniques is not only the subpixel area SG in this pixel region AG, also the subpixel area SG to the same tone of this pixel region AG periphery also applies following gray shade scale signal overlappingly, this gray shade scale signal puts on arbitrarily, and the subpixel area SG. that possesses RGB chromatograph of all kinds respectively of 1 pixel region AG that is to say, the subpixel area SG (sub-pixel) that the RGB of a pixel region AG (display pixel) is of all kinds, by the overlapping gray-scale displayed level signal that is used for 1 sub-pixel in the display pixel, with its sub-pixel of same tone that also imposes on the display pixel of 1 display pixel periphery, show.
Therefore, can the visuognosis resolution sense higher than actual pixels number, for example when adopting following liquid-crystal apparatus, can realize corresponding VGA (Video Graphics Array, Video Graphics Array) the picture display resolution of specification, this liquid-crystal apparatus has the picture display resolution of corresponding QVGA (Quarter VideoGraphics Array, 1/4th Video Graphics Arrays) specification.
The encapsulant 5 of liquid-crystal apparatus 100 by the frame shape come attaching components substrate 91 and with the filter substrate 92 of this device substrate 91 subtends configuration, and enclose liquid crystal in the inboard of sealing material 5 and form liquid crystal layer 4.
Here, liquid-crystal apparatus 100 is colour demonstration liquid-crystal apparatus that 4 looks of a kind of R of employing, G, B, W constitute, and be the liquid-crystal apparatus that uses the driven with active matrix mode of a-Si type TFT element as on-off element. in addition, liquid-crystal apparatus 100 is the Transflective liquid-crystal apparatus that have regional transmission and reflector space in R, G, each subpixel area SG of B, and be the liquid-crystal apparatus with many interstitial structures, these many interstitial structures make the thickness of liquid crystal layer 4 different at this regional transmission and this reflector space.
At first, planar structure for device substrate 91 describes. on the inner face of device substrate 91, mainly form or install many source lines 32, many grid lines 33, a plurality of a-Si type TFT element 21, a plurality of pixel electrode 10, drive IC 40, outside connections use wiring 35 and FPC (Flexible PrintedCircuit, flexible print circuit) 41 etc.
As shown in Figure 1, device substrate 91 have stretch out from one side side direction outside of filter substrate 92 stretch out zone 31, stretch out the input side terminal (not shown) and many outside distolateral electrical connections that are connected with wiring 35 that drive IC 40. drive IC 40 are installed on the zone 31 at this, and many outside connects that distolateral and FPC is electrically connected with another of wiring 35. each source line 32 is by the extension of Y direction and separate proper spacing by directions X and form, on the distolateral outgoing side terminal (not shown) that is electrically connected to drive IC 40 of each source line 32.
Each grid line 33 possesses: the 1st wiring 33a, and it forms by the Y direction and extends; With the 2nd wiring 33b, it forms from the terminal part of the 1st wiring 33a and begins to extend by directions X. the direction that the 2nd wiring 33b presses and each source line 32 intersects of each grid line 33, just directions X extends and separates proper spacing by the Y direction and forms, the 1st wiring 33a one of each grid line 33 is distolateral to be electrically connected on the outgoing side terminal (not shown) of drive IC 40. with the corresponding position of infall of the 2nd wiring 33b of each source line 32 and each grid line 33, TFT element 21 is set, each TFT element 21 is electrically connected to each source line 32, on each grid line 33 and each pixel electrode 10 etc. each TFT element 21 and each pixel electrode 10 are arranged on the position corresponding with each subpixel area SG. and each pixel electrode 10 for example adopts the transparent conductive material of ITO (indium-Tin Oxide, tin indium oxide) etc. to form.
1 pixel region AG lines up a plurality of by directions X and Y direction and is rectangular zone is effective viewing area V (using the double dot dash line area surrounded).At this effective viewing area V, the image of character display, numeral, figure etc. also have, effectively the zone in the viewing area V outside be not used in demonstration frame region 38. in addition, on the inner face of each source line 32, each grid line 33, each TFT element 21 and each pixel electrode 10 etc., form not shown alignment films.
Below, describe for the planar structure of filter substrate 92.Filter substrate 92 has 3 chromatic colorant layer 6R, 6G, 6B and the common electrode 8 etc. of light shield layer (be commonly referred to as " black matrix ", only abbreviate " BM " below as), R, G, B.Also have, in the following description, when not color separation all points to chromatograph, only be designated as " dyed layer 6 ", when the differentiation look points to chromatograph, be designated as .BM such as " dyed layer 6R " and be formed on the position of dividing each subpixel area SG.Each subpixel area SG corresponding in Fig. 1 with W, dyed layer is not set especially. common electrode 8 is identical with pixel electrode, transparent conductive material by ITO etc. constitutes, and filter substrate 92 roughly the one side scope in form. common electrode 8 is at the corner areas E1 of encapsulant 5, with distolateral an electrical connection of wiring 15, and another distolateral and corresponding with the COM of drive IC 40 lead-out terminal of this wiring 15 is electrically connected.
In liquid-crystal apparatus 100 with said structure, based on from the signal of the FPC41 side that has been connected with electronic equipment etc. and electric power etc., press G1 by drive IC 40, G2, Gm-1, the order of Gm (m is a natural number), select 1 grid line 33 respectively in exclusive mode successively at every turn, and selected grid line 33 is supplied with the gate signal of selecting voltage, on the other hand other non-selected grid lines 33 are supplied with the gate signal of non-selection voltage. then, drive IC 40 is at the pixel electrode 10 that is in the position corresponding with selected grid line 33, by corresponding respectively S1, S2, Sn-1, source line 32 and the TFT element 21 of Sn (n is a natural number), supplying with and the corresponding source signal of displaying contents. its result is, the show state of liquid crystal layer 4 converts non-show state or middle show state to, and the state of orientation of liquid crystal layer 4 is controlled.
(dot structure)
Below, with reference to Fig. 2 etc., describe for the structure of 1 pixel region AG. Fig. 2 be among Fig. 1 with the corresponding part amplification view of 1 pixel region AG (part that with dashed lines surrounds).
As shown in Figure 2,1 its structure of pixel region AG possess the 2 row 2 row subpixel area SG.s corresponding with R, G, B, W moreover, possess with R, G, each its structure of subpixel area SG that B is corresponding and to carry out the regional transmission E10 that transmission-type shows and to carry out reflector space E11. that reflection-type shows with respect to this, its structure of the subpixel area SG corresponding with W only possesses regional transmission E10, does not have reflector space E11.
Then,, the structure with R, G, each subpixel area SG that B is corresponding among Fig. 2 is divided into the structure of reflector space E11 and the structure of regional transmission E10, describes with reference to Fig. 3.
Fig. 3 (a) is expression and R, G, the part amplification view of each subpixel area SG corresponding elements substrate 91 structure of B. on the other hand, Fig. 3 (b) be expression and device substrate 91 subtends of Fig. 3 (a) dispose and and R, G, the part amplification view of filter substrate 92 structures of each subpixel area SG correspondence of B. Fig. 4 (a) is along Fig. 3 (a) and the fragmentary cross-sectional view of the cutting line A-A ' (b), expression and R, G, the cross-section structure of the liquid-crystal apparatus 100 of each reflector space E11 correspondence of B. on the other hand, Fig. 4 (b) is along Fig. 3 (a) and the fragmentary cross-sectional view of the cutting line B-B ' (b), expression and R, G, the cross-section structure of the liquid-crystal apparatus 100 of each subpixel area SG correspondence of B.
At first, the structure for the reflector space E11 in 1 subpixel area SG of R, G, B describes.
Adopting on the formed downside substrates 1 of material such as glass or quartz, forming grid line 33. in Fig. 3 (a), having as the 2nd wiring 33b of the important document of grid line 33: main line part 33ba, press the directions X extension; With branch line part 33bb, from this main line part 33ba to Y direction branch bendingly.On downside substrate 1 and grid line 33, the gate insulation layer 50. that formation has an insulativity on the gate insulation layer 50 and and the branch line part 33bb plane of grid line 33 on the position that overlaps, the a-Si layer 52. source line 32 of important document that are provided as TFT element 21 are on gate insulation layer 50, and it forms by the direction of intersecting with grid line 33 and extends.
On source line 32, maintenance capacitance electrode 16 and gate insulation layer 50 etc., form passivation (passivation) layer (reaction prevents layer) 51 with insulativity.Passivation layer 51 has contact hole (opening) 51a with the position that keeps overlapping on capacitance electrode 16 planes.On passivation layer 51, the resin bed 17. that formation is made of resin material etc. is on the surface of resin bed 17, form a plurality of small concavo-convex, this small concavo-convex function with the light scattering of making. resin bed 17 has contact hole 17a in the position corresponding with the contact hole 51a of passivation layer 51.On resin bed 17, form reflecting electrode 5, this reflecting electrode adopts Al (aluminium) to wait to form and has a reflection function. and reflecting electrode 5 has on a plurality of small concavo-convex resin beds 17 because be formed into, so this reflecting electrode 5 forms a plurality of concavo-convex shape that reflects that this is small. in the position of the reflecting electrode 5 corresponding, form and make light transmissive transmissive apertures zone 80 with contact hole 51a and 17a.On reflecting electrode 5, form pixel electrode 10.
In addition, on the outside of downside substrate 1, configuration phase difference plate 13 (1/4 wavelength plate), and configuration polarization plates 14. on the outside of polarization plates 14, disposes the backlight 15 as lighting device in addition on the outside of polarizer 13.Light source that backlight 15 preferably for example combines the linear light source and the light guide plate of the point source of light of LED (LightEmitting Diode, light emitting diode) etc. and so on or cold cathode fluorescent tube etc. and so on etc.
On the other hand, the structure of the filter substrate 92 corresponding with reflector space E11 in 1 subpixel area SG of R, G, B, as described below.
On by the upside substrate 2 that constitutes with downside substrate 1 identical materials and the position corresponding with reflector space E11, form R, G, the thickness setting of dyed layer 6. each dyed layer 6 of B is that d3. dyed layer 6 has opening 6a, this opening has the function that makes it to show uniform look at regional transmission E10 and reflector space E11. in the position of dividing adjacent dyed layer 6, form BM. on dyed layer 6, formation is as described below with insulation course 18 with insulation course 18. element thickness adjustment by the element thickness adjustment that resin material etc. constitutes, have following two kinds of functions concurrently, a kind of function is, will with R, G, the thickness (thickness of unit) of the liquid crystal layer 4 of each regional transmission E10 correspondence of B and and R, G, the thickness setting of the liquid crystal layer 4 of each reflector space E11 correspondence of B is best value, regional homogeneous these both sides is set optical characteristics, promptly have so-called many interstitial structures, another kind of function is, will with R, G, the thickness of the liquid crystal layer 4 of each regional transmission E10 correspondence of B is identical with thickness setting with the corresponding liquid crystal layer 4 of the subpixel area SG (regional transmission E10) of W, zone these both sides is set at optical characteristics identical. the element thickness adjustment thickness of insulation course 18, be set at the value identical with the thickness d 3 of each dyed layer 6. the element thickness adjustment with insulation course 18 grades on, form common electrode 8.
In addition, configuration phase difference plate 11 (1/4 wavelength plate) on the outside of upside substrate 2, and on the outside of polarizer 11, dispose polarization plates 12.
Recited above and reflector space E11 corresponding elements substrate 91 and with the corresponding filter substrate 92 of this reflector space E11 by liquid crystal layer 4 and subtend. and the thickness setting of the liquid crystal layer 4 corresponding with reflector space E11 is d2.
And when the reflector space E11 with said structure carries out the reflection-type demonstration, to the exterior light of 100 incidents of liquid-crystal apparatus along Fig. 4 (a) and the path R (b) advance. that is to say, exterior light to 100 incidents of liquid-crystal apparatus is reflected by reflecting electrode 5, arrive the beholder. at this moment, this exterior light is by forming R, G, each dyed layer 6 of B, the zone of common electrode 8 and pixel electrode 10 etc., reflect by the reflecting electrode 5 that is positioned at these pixel electrode 10 downsides, and once more by pixel electrode 10, common electrode 8 and dyed layer 6 etc., manifest predetermined tone and lightness with this. so, just by the color display image of beholder's visuognosis expection.
Below, the structure for the regional transmission E10 in 1 subpixel area SG of R, G, B describes.
On downside substrate 1, shown in Fig. 4 (b), form gate insulation layer 50. on gate insulation layer 50, form passivation layer 51.On passivation layer 51, form resin bed 17. as mentioned above, be formed with small concavo-convex in its surface at the formed resin bed 17 of reflector space E11, relative therewith, do not form small concavo-convex in its surface at the formed resin bed 15 of regional transmission E10. that is to say, form on the formed resin bed of regional transmission E10 17 surfaces, have general planar. on resin bed 17, form pixel electrode 10.In addition, configuration phase difference plate 13 on the outside of downside substrate 1, and on the outside of polarizer 13, dispose polarization plates 14.In addition, configuration backlight 15. on the outside of polarization plates 14
On the other hand, the structure of the filter substrate 92 corresponding with regional transmission E10 in 1 subpixel area SG of R, G, B, as described below. on upside substrate 2, form the dyed layer 6 of R, G, B.On this each dyed layer 6, form common electrode 8.In addition, configuration phase difference plate 11 on the outside of upside substrate 2, and on the outside of polarizer 11, dispose polarization plates 12.
Recited above and regional transmission E10 corresponding elements substrate 91 and with the corresponding filter substrate 92 of this regional transmission E10 by liquid crystal layer 4 and subtend. in addition, the thickness d 1 of the liquid crystal layer 4 corresponding with regional transmission E10 is set than big with the thickness d 2 of the corresponding liquid crystal layer 4 of reflector space E11, has constituted so-called many interstitial structures.
And when the regional transmission E10 with said structure carries out the transmission-type demonstration, advance along the path T shown in Fig. 4 (b) from the illumination light of 15 outgoing of backlight, and by gate insulation layer 50, passivation layer 51, pixel electrode 10 and dyed layer 6 etc., arrive the beholder. at this moment, this illumination light is because of the dyed layer 6 of transmission R, G, B, and manifest predetermined tone and lightness. and so, just by the color display image of beholder's visuognosis expection.
Below, with reference to Fig. 5, the structure for the subpixel area SG corresponding with W describes.
Fig. 5 is the fragmentary cross-sectional view of the cutting line C-C ' in Fig. 2, expression comprises the cross-section structure of the subpixel area SG corresponding with W. also has, in Fig. 5, for the cross-section structure of understanding easily the subpixel area SG corresponding with W and and R, G, the part that the cross-section structure of the subpixel area SG of B correspondence is different, the cross-section structure of the expression subpixel area SG corresponding also with G among this 3 look. in addition, in Fig. 5, subpixel area SG that will be corresponding and the subpixel area SG corresponding with G with W, be abbreviated as SG (W) and SG (G) respectively. moreover, below, enclose identical symbol for top illustrated device, its explanation simplified or omitted.
At first, for the structure of the subpixel area SG corresponding elements substrate 91 of W, the structure of contrast and the subpixel area SG corresponding elements substrate 91 of G describes.
Understand as these both sides' of contrast structure, in the subpixel area SG corresponding with W, between resin bed 17 and pixel electrode 10, reflecting electrode 5. is not set in addition, for other structures, then both sides are roughly the same. therefore, its structure of the subpixel area SG of W only has regional transmission E10. on the other hand, the structure of the filter substrate 92 corresponding with the subpixel area SG of W, as described below. on upside substrate 2, form element thickness adjustment insulation course 18 with preset thickness d3, and also have with forming common electrode 8. on the insulation course 18 in this element thickness adjustment, at the subpixel area SG corresponding as mentioned above, the dyed layer that uses white look material is not set with W.
The subpixel area SG corresponding elements substrate 91 of recited above and W and with the corresponding filter substrate 92 of this regional transmission E10 by liquid crystal layer 4 and subtend. and, the thickness of the liquid crystal layer 4 corresponding with the subpixel area SG of W, be set at and with the thickness of R, G, liquid crystal layer 4 that each regional transmission E10 of B is corresponding
Identical value.
Also have, the principle of carrying out the transmission-type demonstration of the subpixel area SG of W and top roughly the same. that is to say, when the subpixel area SG of W carries out the transmission-type demonstration, advance along path T shown in Figure 5 from the illumination light of 15 outgoing of backlight, and by gate insulation layer 50, passivation layer 51, pixel electrode 10, common electrode 8 and element thickness adjustment insulation course 18 etc., arrive the beholder. at this moment, this illumination light is because of the above-mentioned device of transmission, and manifest predetermined lightness. whereby, seek the raising of high brightness and high-contrast.
Below, the action effect for the related liquid-crystal apparatus 100 of the present invention's the 1st embodiment describes.
Generally speaking, have and R, G, in the liquid-crystal apparatus of the display pixel of B and W (transparent) correspondence of all kinds, by to R, G, the display pixel of the additional W of each display pixel of B, realize high brightness and high-contrast., because in the display pixel of W, there is not the look material, so for will with R, G, the thickness of liquid crystal layer (element thickness) of the regional transmission correspondence of B is set at identical with thickness (element thickness) with the corresponding liquid crystal layer of the regional transmission of the display pixel of W, the transparent resin layer of element thickness adjustment usefulness need be set in the position corresponding with the display pixel of W. in addition, for Transflective liquid-crystal apparatus with many interstitial structures, generally in order to make the optical characteristics homogeneous at regional transmission and reflector space, form the resin bed that many gaps are used at reflector space, will the thickness of liquid crystal layer corresponding set than big with the corresponding thickness of liquid crystal layer of reflector space with regional transmission.
In having the Transflective liquid-crystal apparatus of this many interstitial structures, its constitute when having with R, G, B and W (transparent) corresponding display pixel of all kinds (below, be called comparative example), need be in the position corresponding with the display pixel of W with the transparent resin layer of element thickness adjustment usefulness, will be at each reflector space of R, G, each display pixel of B by the many gaps resin bed that material constituted that is different from this transparent resin layer, be provided with respectively, technology is increased, causes that thus the cost of products of liquid-crystal apparatus increases.
This point is in the related liquid-crystal apparatus 100 of the 1st embodiment, particularly at R, G, the regional transmission E10 of the reflector space E11 of B and W (transparent), setting by same transparent material (for example, transparent resin material) the element thickness adjustment of Gou Chenging that is to say with insulation course 18., in the manufacture process of this liquid-crystal apparatus 100, at R, G, element thickness adjustment set on each dyed layer 6 of each reflector space E11 of B uses insulation course 18 by same technology with insulation course 18 with in the set element thickness adjustment of the regional transmission E10 of W (transparent), adopt same transparent material to form simultaneously. whereby, can with R, G, the position of each subpixel area SG correspondence of B and at the subpixel area SG of W (regional transmission E10), the element thickness adjustment that forms many interstitial structures and element thickness adjustment usefulness respectively simultaneously with insulation course 18. its results is, compare with above-mentioned comparative example, the minimizing of technology can be sought, the cost of products of liquid-crystal apparatus 100 can be lowered whereby.
As mentioned above, preferably, the thickness d 1 of the liquid crystal layer 4 corresponding with each regional transmission E10 of R, G, B and W, the thickness d 2 of the liquid crystal layer 4 corresponding with each reflector space E11 of R, G, B, the element thickness adjustment corresponding thickness d 3 of insulation course 18 with each reflector space E11 of R, G, B, relation between the thickness d 3 of the element thickness adjustment usefulness insulation course 18 corresponding with each regional transmission E10 of W and the thickness d 3 of each dyed layer 6 is set at
. in addition, preferably, when thickness d 1 being set at 4 μ m and thickness d 2 is set at 2 μ m, thickness d 3 is set at about 2 μ m.
[the 2nd embodiment]
The 2nd embodiment is used for following liquid-crystal apparatus with the present invention, and this liquid-crystal apparatus is to use the device as the driven with active matrix mode of the TFD of two-terminal element one example (Thin Film Diode, thin film diode) element.
(structure of liquid-crystal apparatus)
Below, the structure for the related liquid-crystal apparatus 200 of the 2nd embodiment of the present invention describes.Also have, below, enclose identical symbol, its explanation is simplified or omitted for the device identical with the 1st embodiment.
Fig. 6 is the planimetric map of the schematic configuration of the related liquid-crystal apparatus 200 of modal representation the 2nd embodiment. as shown in Figure 6, liquid-crystal apparatus 200 its device substrates 93 and bonding by the frame shape encapsulant 5 of sneaking into conducting parts 7 such as a plurality of metallicss with the filter substrate 94 of this device substrate 93 subtends configuration, and enclose liquid crystal in the inboard of sealing material 5 and form liquid crystal layer 4. in Fig. 6, side (side of watching) and accompanying drawing depth side in front of accompanying drawing, dispose device substrate 93 and filter substrate 94 respectively, and the configuration of these two substrates is opposite with the 1st embodiment.
Here, liquid-crystal apparatus 200 is colour demonstration liquid-crystal apparatus that 4 looks of a kind of R of employing, G, B, W constitute, and be the liquid-crystal apparatus that uses the driven with active matrix mode of TFD element as on-off element. in addition, liquid-crystal apparatus 200 is the Transflective liquid-crystal apparatus that have regional transmission and reflector space in R, G, each subpixel area SG of B, and be the liquid-crystal apparatus with many interstitial structures, these many interstitial structures make the thickness of liquid crystal layer 4 different at this regional transmission and this reflector space.
At first, the planar structure for device substrate 93 describes. and device substrate 93 mainly possesses many data lines 62, a plurality of TFD element 63, a plurality of pixel electrode 10, many and draws around wiring 61, Y drive IC 67, a plurality of X drive IC 66, many outside connections with wiring 35 and FPC41.
Many are drawn around wiring and 61 comprise: main line part 61a, press the extension of Y direction; With sweep 61b, this main line part 61a roughly is bent into the right angle to directions X relatively. and each main line part 61a forms, in frame region 38, extend by the Y direction from stretching out zone 31. in addition, each main line part 61a is each data line 62 almost parallel relatively, and separating certain interval forms. each sweep 61b is in frame region 38, till extending to encapsulant 5 about being positioned at by directions X. and the terminal part of this sweep 61b is electrically connected with conducting parts 7 in encapsulant 5.
Stretching out on the zone 31 of device substrate 93, Y drive IC 67 and a plurality of X drive IC 66. are installed in addition, stretching out on the zone 31, also form many outside connections with wiring 35.
The input side of each X drive IC 66 is electrically connected to outside distolateral with wiring 35 of connecting, and the outgoing side of each X drive IC 66 is electrically connected to and respectively draws distolateral around wiring 61 on the other hand. and whereby, each X drive IC 66 can be to respectively drawing around wiring 61 output scanning signals.
The input side of Y drive IC 67 is electrically connected to outside distolateral with wiring 35 of connecting, and the outgoing side of Y drive IC 67 is electrically connected to the distolateral of each data line 62 on the other hand.Whereby, Y drive IC 67 can be to each data line 62 outputting data signals.
FPC41 be electrically connected to following electronic equipment and many outside connect with another of wiring 35 distolateral.
In device substrate 93 with said structure, for example from the electronic equipment of portable telephone or information terminal etc. by FPC41, Y drive IC 67 and each X drive IC 66 etc., to each data line 62 with respectively draw around wiring 61 and distinguish outputting data signals and sweep signals.
Below, the planar structure for filter substrate 94 describes. and as shown in Figure 6, filter substrate 94 its structures mainly possess each dyed layer 6 of R, G, B and have scan electrode 64 of belt like shape etc.
Each dyed layer 6 is formed at the position corresponding with pixel electrode 10. pressing between the adjacent dyed layer of Y direction 6, be formed with R, G, any 2 looks overlapping among each dyed layer 6 of B formed light shield layer 67 (referring to Fig. 9 (a) etc.), on the other hand, pressing between the adjacent dyed layer of directions X 6, be formed with R, G, any 3 looks overlapping among each dyed layer 6 of B formed light shield layer 68 (referring to Fig. 9 (b) etc.). each scan electrode 64 extends and separates certain interval by the Y direction by directions X and forms. and the left part of each scan electrode 64 or right part are as shown in Figure 6, till extending in the encapsulant 5, and and sealing material 5 in a plurality of conducting parts 7 of being sneaked into be electrically connected.
Fig. 6 expresses, the state that filter substrate 94 recited above and device substrate 93 are glued together by encapsulant 5. as shown in the figure, each data line 62 of each scan electrode 64 opposed member substrate 93 of filter substrate 94 intersects, and with overlap on a plurality of pixel electrodes 10 planes that become row by directions X. like this, the zone that scan electrode 64 and each pixel electrode 10 overlap has just constituted 1 subpixel area SG.
In addition, respectively drawing as shown in the figure of each scan electrode 64 of filter substrate 94 and device substrate 93 around wiring 61, alternately overlap between on the left side 200a side and the right 200b side, each scan electrode 64 and respectively draw around the wiring 61 by the conducting parts encapsulant 5 in 7 carry out about conducting. that is to say, respectively drawing as shown in the figure of each scan electrode 64 of filter substrate 94 and device substrate 93 around the conducting of wiring between 61, alternately realized between on the left side 200a side and the right 200b side. therefore, each scan electrode 64 of filter substrate 94 respectively draws around wiring 61 by device substrate 93, is electrically connected to each the X drive IC 66 that lays respectively at about accompanying drawing.
In liquid-crystal apparatus 200 with said structure, based on from the signal of the FPC41 side that is connected with electronic equipment and electric power etc., by each X drive IC 66, select 1 each scan electrode 64 respectively in exclusive mode successively by respectively drawing around wiring 61 at every turn, and selected scan electrode 64 is supplied with the sweep signal of selecting voltage, on the other hand other non-selected scan electrodes 64 are supplied with the sweep signal of non-selection voltage.Then, Y drive IC 67 is at the pixel electrode 10 that is positioned at the position corresponding with selected scan electrode 64, by corresponding data line 62 and TFD element 63 are supplied with and the corresponding data-signals of displaying contents respectively.Its result is, the show state of liquid crystal layer 4 converts non-show state or middle show state to, and the state of orientation of liquid crystal layer 4 is controlled.
(dot structure)
Below, with reference to Fig. 7 etc., describe for the structure of 1 pixel region AG. Fig. 7 be among Fig. 6 with the corresponding part amplification view of 1 pixel region AG (part that with dashed lines surrounds).
As shown in Figure 7,1 its structure of pixel region AG possess the 2 row 2 row subpixel area SG.s corresponding with R, G, B, W moreover, possess with R, G, each its structure of subpixel area SG that B is corresponding and to carry out the regional transmission E10 that transmission-type shows and to carry out reflector space E11. that reflection-type shows with respect to this, its structure of the subpixel area SG corresponding with W only possesses regional transmission E10, does not have reflector space E11.
Below, with reference to Fig. 8, describe for the structure among Fig. 7 with R, G, each subpixel area SG that B is corresponding.
Fig. 8 (a) is the part amplification view of subpixel area SG corresponding elements substrate 93 structures of expression and R, G, B. on the other hand, Fig. 8 (b) is the part amplification view of the structure of the filter substrate 94 corresponding with the subpixel area SG of R, G, B. Fig. 9 (a) is the fragmentary cross-sectional view of the cutting line D-D ' in Fig. 8 (a), the cross-section structure of the liquid-crystal apparatus 200 that expression is corresponding with each reflector space E11 of R, G, B.Fig. 9 (b) is the fragmentary cross-sectional view of the cutting line E-E ' in Fig. 8 (a), the cross-section structure of the liquid-crystal apparatus 200 that expression is corresponding with the subpixel area SG of R, G, B.
At first, the structure for corresponding elements substrate 93 in 1 subpixel area of R, G, B describes.On the downside substrate 81 that constitutes by glass etc., forming data line 62, TFD element 63 and pixel electrode 10 etc. data line 62 is as shown in Figure 8, it forms near the right-hand member of subpixel area SG and to extend .TFD element 63 by the Y direction and be arranged near the corner location of subpixel area SG. and pixel electrode 10 is arranged in the subpixel area SG, and and TFD element 63 is electrically connected. therefore, data line 62 is electrically connected to pixel electrode 10. by TFD element 63 to be also had, on pixel electrode 10 grades, form not shown alignment films.
Below, for the structure of the filter substrate 94 corresponding, it is divided into regional transmission E10 and reflector space E11 describes with 1 subpixel area SG.
At first, the structure for the reflector space E11 in 1 subpixel area SG of R, G, B describes.
On the upside substrate 82 that constitutes by glass etc., form resin bed 17. on the surface of resin bed 17, form a plurality of small concavo-convex, the concavo-convex function that this is small with the light scattering of making. on resin bed 17, the reflection horizon 65. that formation is made of Al etc. therefore, reflection horizon 65 forms a plurality of small concavo-convex shape that reflects resin bed 17.On reflection horizon 65; form R; G; each dyed layer 6.R of B; G; each dyed layer 6 of B has opening 6a; this opening has the function that shows uniform look at regional transmission E10 and this E11 of reflector space. in addition; in Fig. 8 (b); the zone of being divided by subpixel area SG and dashed region E30 comprises two zones; the one, be formed with R; G; the zone of the light shield layer 67 that the dyed layer 6 of any 2 looks overlaps among the dyed layer 6 of B; the 2nd, be formed with the zone of the light shield layer 68 that the dyed layer 6 of any 3 looks overlaps. on the reflection horizon 65 that is positioned at opening 6a and on the dyed layer 6; protective seam 19. these protective seams 19 that formation has insulativity have protection dyed layer 6; the etching that produces or the function of pollution in order to avoid cause by employed medicament in the manufacturing process of filter substrate 94 etc. from the distance setting to the protective seam 19 on the resin bed 17 is that d7. is on protective seam 19; forming the element thickness adjustment is that d7. is on element thickness adjustment usefulness insulation course 18 with insulation course 18. element thickness adjustment with the thickness setting of insulation course 18; forming scan electrode 64. also has; on scan electrode 64, form not shown alignment films.
In addition, configuration phase difference plate 13 on the outside of downside substrate 81, and configuration polarization plates 14. disposes backlight 15. in addition on the outside of polarization plates 14 on the outside of polarizer 13
Recited above and reflector space E11 corresponding elements substrate 93 and with the corresponding filter substrate 94 of this reflector space E11 by liquid crystal layer 4 and subtend. and the thickness setting of the liquid crystal layer 4 corresponding with reflector space E11 is d6.
And carry out reflection-type when showing at reflector space E11 with said structure, to the exterior light of 200 incidents of liquid-crystal apparatus along Fig. 9 (a) and the path R (b) advance.That is to say, exterior light to 200 incidents of liquid-crystal apparatus is reflected by reflection horizon 65, arrive the beholder. at this moment, this exterior light is by being formed with pixel electrode 10, element thickness adjustment insulation course 18 and R, G, the zone of each dyed layer 6 grade of B, reflect by reflection horizon 65 that is positioned at these each dyed layer 6 downsides and the reflection horizon 65 that is positioned at each opening 6a, and once more by each dyed layer 6, element thickness adjustment insulation course 18 and pixel electrode 10 etc., manifest predetermined tone and lightness with this. so, just can be by the color display image of beholder's visuognosis expection.
Below, the structure for the regional transmission E10 in 1 subpixel area SG of R, G, B describes.
Shown in Fig. 9 (b); on downside substrate 81, form resin bed 17; and on this resin bed 17, form make light transmission see through open area 85 etc. then; on the resin bed 17 that is positioned at through open area 85; form the dyed layer 6 of R, G, B etc. on the dyed layer 6 of R, G, B, form protective seam 19.In addition, on protective seam 19, form scan electrode 64. and also have, on scan electrode 64, form not shown alignment films.
In addition, configuration phase difference plate 13 on the outside of downside substrate 81, and configuration polarization plates 14. in addition on the outside of polarizer 13, configuration backlight 15. on the other hand on the outside of polarization plates 14, on upside substrate 82, form pixel electrode 10. and also have, on pixel electrode 10, form not shown alignment films.
Recited above and regional transmission E10 corresponding elements substrate 93 and with the corresponding filter substrate 94 of this regional transmission E10 by liquid crystal layer 4 and subtend. in addition, the thickness of the liquid crystal layer 4 corresponding with regional transmission E10
Set greatlyyer, constituted so-called many interstitial structures than the thickness d 6 of the liquid crystal layer 4 corresponding with reflector space E11.
And when the regional transmission E10 with said structure carries out the transmission-type demonstration; advance along the path T shown in Fig. 9 (b) from the illumination light of 15 outgoing of backlight; by resin bed 17, dyed layer 6, protective seam 19, scan electrode 64 and pixel electrode 10 etc., arrive the beholder.At this moment, this illumination light is because of the dyed layer 6 of transmission R, G, B, and manifests predetermined tone and lightness. so, and just can be by the color display image of beholder's visuognosis expection.
Below, with reference to Figure 10, the structure for the subpixel area SG corresponding with W describes.
Figure 10 is the fragmentary cross-sectional view of the cutting line F-F ' in Fig. 7, expression comprises the cross-section structure of the subpixel area SG corresponding with W. also has, in Figure 10, for the cross-section structure of understanding easily the subpixel area SG corresponding with W and and R, G, the part that the cross-section structure of the subpixel area SG of B correspondence is different, the cross-section structure of the expression subpixel area SG corresponding also with G among this 3 look. in addition, in Figure 10, subpixel area SG that will be corresponding and the subpixel area SG corresponding with G with W, be abbreviated as SG (W) and SG (G) respectively. moreover, below, enclose identical symbol for top illustrated device, its explanation simplified or omitted.
At first, for with subpixel area SG corresponding elements substrate 94 structures of W, describe. on downside substrate 81, form resin bed 17 etc. form on the formed resin bed of regional transmission E10 17 surfaces, roughly have flatness. on resin bed 17, form element thickness adjustment insulation course 18 etc. use on the insulation course 18 in the element thickness adjustment, forming scan electrode 64. also has, on scan electrode 64, form not shown alignment films. therefore, the subpixel area SG corresponding with W is for only having the structure of regional transmission E10. also have, at the subpixel area SG corresponding with W, the dyed layer that uses white look material is not set. on the other hand, corresponding to device substrate 93 structures of the subpixel area SG corresponding with W and and R, G, subpixel area SG corresponding elements substrate 93 structures of B are identical.
The subpixel area SG corresponding elements substrate 93 of recited above and W and with the corresponding filter substrate 94 of this regional transmission E10 by liquid crystal layer 4 and subtend. and, the thickness of the liquid crystal layer 4 corresponding with the subpixel area SG of W is set at and the value identical with the thickness d 5 of R, G, liquid crystal layer 4 that each regional transmission E10 of B is corresponding.
Also have, the principle of carrying out the transmission-type demonstration of the subpixel area SG of W and top roughly the same. that is to say, when the subpixel area SG of W carries out the transmission-type demonstration, advance along path T shown in Figure 10 from the illumination light of 15 outgoing of backlight, by resin bed 17, element thickness adjustment insulation course 18, scan electrode 64 and pixel electrode 10 etc., arrive the beholder. at this moment, this illumination light is because of the above-mentioned device of transmission, and manifest predetermined lightness. whereby, seek the raising of high brightness and high-contrast.
Below, if describe, be exactly that the related liquid-crystal apparatus of the 2nd embodiment 200 produces and the identical action effect of above-mentioned the 1st embodiment for the action effect of the related liquid-crystal apparatus 200 of the 2nd embodiment of the present invention.
That is to say; in this liquid-crystal apparatus 200; particularly at R; G; the regional transmission E10 of the reflector space E11 of B and W (transparent); setting by same transparent material (for example; transparent resin material) the element thickness adjustment of Gou Chenging that is to say with insulation course 18.; in the manufacture process of this liquid-crystal apparatus 200; at R; G; element thickness adjustment set on each protective seam 19 of each reflector space E11 of B uses insulation course 18 by same technology with insulation course 18 with in the set element thickness adjustment of the regional transmission E10 of W (transparent); adopt same transparent material to form simultaneously. whereby; can with R; G; the subpixel area SG (regional transmission E10) of the position of each subpixel area SG correspondence of B and W, the element thickness adjustment that forms many interstitial structures and element thickness adjustment usefulness respectively simultaneously is with insulation course 18.Its result is and above-mentioned comparative example is compared, and can seek the minimizing of technology, can lower the cost of products of liquid-crystal apparatus 100 whereby.
As mentioned above, preferably, the thickness d 5 of the liquid crystal layer 4 corresponding with each regional transmission E10 of R, G, B and W, thickness d 6 with R, G, liquid crystal layer 4 that each reflector space E11 of B is corresponding, the element thickness adjustment corresponding with R, G, each reflector space E11 of B with insulation course 18 and with the corresponding element thickness adjustment usefulness thickness d 7 of insulation course 18 of each regional transmission E10 of W between relation, be set at
. in addition, preferably, when thickness d 5 being set at 4 μ m and thickness d 6 is set at 2 μ m, thickness d 7 is set at about 2 μ m.
[variation]
In above-mentioned the 1st embodiment, it constitutes, R, G, each subpixel area SG of B in filter substrate 92 sides, in order to show uniform look at regional transmission E10 and reflector space E11, at the dyed layer 6 that is formed at reflector space E11 opening 6a. being set is not limited thereto, can opening 6a be set in the present invention at dyed layer 6 yet, and bigger by the thickness that makes the dyed layer 6 that is formed at regional transmission E10 than the thickness of the dyed layer 6 that is formed at reflector space E11, obtain above-mentioned identical action effect.
For this structure, carrying out simple declaration with reference to Figure 11. Figure 11 is the sectional view corresponding with Fig. 5, as note G subpixel area SG distinguished, at the thickness of the formed dyed layer 6 of regional transmission E10 with different separately at the thickness of the formed dyed layer 6 of reflector space E11.
That is to say, as shown in figure 11, when noticing the subpixel area SG corresponding with dyed layer 6G, the structure of its regional transmission E10 and reflector space E11 is as described below. at first, for regional transmission E10, on upside substrate 2, form dyed layer 6G, and on this dyed layer 6G, form common electrode 8. on the other hand, for reflector space E11, then on upside substrate 2, form the resin bed 20 that constitutes by resin material, and on this resin bed 20, form dyed layer 6G, on this dyed layer 6G, form the element thickness adjustment in addition again with insulation course 18., the element thickness adjustment with form on the insulation course 18 common electrode 8. and, thickness setting at the formed dyed layer 6G of regional transmission E10 is d8, and the thickness setting of the formed dyed layer 6G of reflector space E11 be d9 (＜d8). in the example in the best, preferably, be set in the thickness d 9 of the formed dyed layer 6G of reflector space E11 about 2 times in the thickness d 8 of the formed dyed layer 6G of regional transmission E10.
When in this structure, carrying out the transmission-type demonstration, from the illumination light of 15 outgoing of backlight along path T, dyed layer 6G to regional transmission E10 passes through 1 time, relative therewith, when carrying out the reflection-type demonstration, because exterior light is along path R, dyed layer 6G to reflector space E11 passes through 1 time earlier, then this exterior light of having passed through is reflected by the reflecting electrode 5 that dyed layer 6G downside is disposed, again along path R again 1 time by dyed layer 6G, that is to say by dyed layer 6G. so cause this light to amount to 2 times, carrying out reflection-type when showing, compare with the situation of carrying out the transmission-type demonstration, light just has more 1 time by dyed layer 6G.
For this reason, thickness d 8 at the formed dyed layer 6G of regional transmission E10 is relative when the thickness d 9 of the formed dyed layer 6G of reflector space E11 is set at about 2 times, cause at regional transmission E10 and reflector space E11, light passes through by identical length, therefore can show uniform look in its both sides' zone. also have, though omitted explanation here especially, self-evident, also the structure of R and each subpixel area SG of B can be made as the structure identical with above-mentioned variation.
In addition, the 2nd embodiment is also identical with the 1st embodiment, and it constitutes, and at R, G, each subpixel area SG of B, in order to show uniform look at regional transmission E10 and reflector space E11, at the dyed layer 6 that is formed at reflector space E11 opening 6a. is set
Be not limited to this structure, the 2nd embodiment also can adopt the structure identical with above-mentioned variation in the present invention. for this point, carrying out simple declaration with reference to Figure 12. Figure 12 is the sectional view corresponding with Figure 10, as note G subpixel area SG distinguished, the thickness of dyed layer 6 that is formed at regional transmission E10 is different separately with the thickness of the dyed layer 6 that is formed at reflector space E11.
That is to say; as shown in figure 12; when noticing the subpixel area SG corresponding with dyed layer 6G; the structure of its regional transmission E10 and reflector space E11 is as described below. at first; for regional transmission E10; on downside substrate 81, form dyed layer 6G, and on this dyed layer 6G, form protective seam 19, on this protective seam 19, form scan electrode 64 again.On the other hand, for reflector space E11, then on downside substrate 81, form resin bed 17, and on this resin bed 17, form reflection horizon 65.In addition, on this reflection horizon 65, form dyed layer 6G, and on this dyed layer 6G, form protective seam 19. and then, on this protective seam 19, form the element thickness adjustment with insulation course 18, and in this element thickness adjustment with forming scan electrode 64. on the insulation course 18
And, thickness setting at the formed dyed layer 6G of regional transmission E10 is d10, on the other hand the thickness setting of the formed dyed layer 6G of reflector space E11 be d11 (＜d10). in the example in the best, preferably, be set in the thickness d 11 of the formed dyed layer 6G of reflector space E11 about 2 times in the thickness d 10 of the formed dyed layer 6G of regional transmission E10. therefore, by adopting the method identical with above-mentioned principle, make light pass through regional transmission E10 and reflector space E11 respectively, just can show uniform look at regional transmission E10 and reflector space E11. also have, the structure of each subpixel area SG of R and B is also self-evident, can be made as the structure identical with above-mentioned variation.
In addition, in the above-mentioned the 1st and the 2nd embodiment (also comprising above-mentioned each variation), it constitutes, at R, G, each subpixel area SG of B is provided with regional transmission E10 and reflector space E11 respectively, at the subpixel area SG of W regional transmission E10. only being set on the other hand is not limited thereto, according to the present invention, in the 1st and the 2nd embodiment, the structure of the subpixel area SG of W also and R, G, the structure of each subpixel area SG of B is identical, regional transmission E10 and reflector space E11. Figure 13 (a) also can be set respectively reach (b) planar structure that 1 pixel region AG of this structure is adopted in expression respectively. here, Figure 13 (a) is Fig. 2 corresponding partial plan related with the 1st embodiment, expresses the structural drawing that regional transmission E10 and reflector space E11 are set in the subpixel area SG of W.On the other hand, Figure 13 (b) is Fig. 7 corresponding partial plan related with the 2nd embodiment, expresses the structural drawing that regional transmission E10 and reflector space E11 are set in the subpixel area SG of W.
Also have, in this case, in the 1st embodiment (comprising above-mentioned variation), need between resin bed corresponding 17 and pixel electrode 10, reflecting electrode 5. be set on the other hand in device substrate 91 sides with the reflector space E11 of W, in the 2nd embodiment (comprising above-mentioned variation), at filter substrate 94, need between the resin bed 17 of the reflector space E11 of W and element thickness adjustment are with insulation course 18, reflection horizon 65. be set
In addition, in the 1st and the 2nd embodiment, though by comprising R, G, B, 2 row, the 2 row subpixel area SG of the dyed layer 6 of W have constituted 1 pixel region AG, but be not limited thereto, in the present invention shown in Figure 14 (a), also can be by comprising R, G, B, 1 row, the 4 row subpixel area SG (being area identical entirely) of the dyed layer 6 of W constitute 1 pixel region AG. to be also had, at this moment, R, G, B, putting in order of W is not defined as the structure of Figure 14 (a), and can be as required, suitably changing it puts in order. in addition, as mentioned above, if W is arranged in 1 pixel region AG, then brightness is improved, the opposite colour saturation decline that but makes sometimes under the high brightness. thereby, in order not only to make brightness improve but also prevent the decline of colour saturation, shown in Figure 14 (b), it effectively is set at, make area and the R of the subpixel area SG of W, G, the area of each subpixel area SG of B is compared, diminish relatively. in addition, according to the present invention, comprise R, G, B, the structure of 1 pixel region SG of the dyed layer 6 of W is not defined as above-mentioned structure, and can carry out various changes without departing from the spirit and scope of the present invention.
In addition; according to the present invention; in the above-mentioned the 1st and the 2nd embodiment; because element thickness adjustment insulation course 18 diaphragm of double as R, G, each dyed layer 6 of B sometimes; thereby on the dyed layer 6 of R, G, each regional transmission of B, also can remaining this element thickness adjustment be used as thinner wall section with insulation course 18.
In addition, according to the present invention, in the above-mentioned the 1st and the 2nd embodiment, though the element thickness adjustment is disposed at same substrate with insulation course 18 and dyed layer, but be not limited thereto, also the element thickness adjustment can be disposed at different substrates with insulation course 18 with dyed layer 6 according to the present invention. particularly, also can dispose dyed layer 6 at substrate in the substrate dispensing unit thickness adjustment that on-off element is set with insulation course 18 with this substrate subtend.At this moment, also can be with configuration reflecting electrode 5 or reflection horizon 65. on the insulation course 18 in a word in the element thickness adjustment, as long as can utilize element thickness adjustment insulation course 18, prevent to produce than big-difference, just can at the regional transmission of the display pixel that possesses R, G, each dyed layer 6 of B and the thickness that do not possess liquid crystal bed thickness between the regional transmission of display pixel of W of dyed layer.
[manufacture method of liquid-crystal apparatus]
Below, for the related liquid-crystal apparatus 100 of the 1st and the 2nd embodiment of the invention described above and manufacture method of 200 etc., describe.
(manufacture method of the liquid-crystal apparatus that the 1st embodiment is related)
At first, with reference to Figure 15 to Figure 21, manufacture method for the related liquid-crystal apparatus 100 of the 1st embodiment describes. and Figure 15 is the process flow diagram of the manufacture method of the related liquid-crystal apparatus 100 of expression the 1st and the 2nd embodiment and 200. and Figure 16 is the process flow diagram of the manufacture method of the related filter substrate 92 of expression the 1st embodiment. and Figure 17 to Figure 21 represents and each corresponding artwork of technology S1 among Figure 15. in Figure 17 to Figure 21, SG (W) and SG (G) represent respectively the subpixel area SG corresponding with W (transparent) and with the corresponding subpixel area SG. of G (green) in addition, E10 and E11 represent respectively should be as the zone of regional transmission and should be as the zone of reflector space. and also have, the cross-section structure with filter substrate shown in Figure 5 92 is that example describes below.
At first, make above-mentioned filter substrate 92 (technology S1). this filter substrate 92 is by making to technology P6 via technology P1.
Particularly, at first prepare the upside substrate 2 that constitutes by materials such as glass or quartz, then utilize photoetching technique, on this upside substrate 2, for example make the BM film forming that constitutes by the black resin material, implement etch processes subsequently. whereby, shown in Figure 17 (a), around subpixel area SG, form the BM (technology P1) of shape with frame shape.
Then, form R, G, each dyed layer 6 (technology P2) of B. particularly, shown in Figure 17 (b), with R, G, each dyed layer 6 of B, utilize photoetching technique make it to become above-mentioned Fig. 1 etc. spread geometry be formed in each subpixel area SG. at this moment, the thickness setting of each dyed layer 6 is that d3. is in the example of the best, preferably, the thickness d 3 of each dyed layer 6 is set at about 2 μ m. in addition, this moment is at each dyed layer 6R corresponding with reflector space E11,6G, 6B is provided with opening 6a, and this opening has the function that shows uniform look at regional transmission E10 and reflector space E11.In addition, all be removed at the formed dyed layer 6 of the subpixel area SG of W this moment by etch processes.
Then, form element thickness adjustment insulation course (technology P3). particularly, part at upside substrate 2, on BM and the dyed layer 6, in the scope of one side, make element thickness adjustment insulation course 18 film forming that constitute by transparent resin material, implement etch processes subsequently. at this moment, the element thickness adjustment with the thickness setting of insulation course 18 be the thickness d 3. identical with dyed layer 6 whereby, when adopting this manufacture method to produce liquid-crystal apparatus 100, can be with the thickness and the R of the liquid crystal layer 4 of the regional transmission E10 of W, G, the thickness setting of the liquid crystal layer 4 of each regional transmission E10 of B is identical, and can be with R, G, the thickness and the R of the liquid crystal layer 4 of each regional transmission E10 of B, G, the thickness setting of the liquid crystal layer 4 of each reflector space E11 of B is best thickness.
Particularly, in this technology, form simultaneously respectively at each reflector space E11 of the subpixel area SG of W and R, G, B the element thickness adjustment that constitutes by same transparent resin material with insulation course 18. thereby, with have that each reflector space E11 to the subpixel area SG of W and R, G, B is independent respectively to form element thickness adjustment with the manufacture method (comparative example) of the sort of technology of insulation course 18 when comparing, correspondingly just can seek the minimizing of technology. its result is, can seek to utilize the cost of products of the liquid-crystal apparatus 100 that this manufacture method makes to lower.
But because the reason on the operation (process) etc., element thickness adjustment sometimes forms greatlyyer than the thickness of above-mentioned each dyed layer 6 with the thickness of insulation course 18.
In this case, the thickness of the liquid crystal layer 4 corresponding and inequality with the thickness of the corresponding liquid crystal layer 4 of each regional transmission E10 of R, G, B with the subpixel area SG (regional transmission E10) of W (transparent), in its both sides' zone produce aspect the optical characteristics inconsistent.
Therefore, in this case, by implementing technology P4 as next technology, make the corresponding element thickness adjustment of subpixel area SG (regional transmission E10) with W with the thickness of insulation course 18 and identical with the thickness of corresponding each dyed layer 6 of each regional transmission E10 of R, G, B. also have, when the element thickness adjustment with the thickness setting of the thickness of insulation course 18 and each dyed layer 6 is identical thickness, self-evident, do not need implementing process P4. in addition, technology P4 is not next technology as technology P3, can be included among the technology P3 yet.
Describe for technology P4 with reference to Figure 19 and Figure 20 at this.As mentioned above, when the element thickness adjustment is bigger than the thickness of each dyed layer 6 with the thickness of insulation course 18, in order to solve above-mentioned not good situation, in technology P4, utilization comprises the resist coated technique, predrying (preliminary drying) technology, exposure technology, the photoetching technique of developing process and etch process, make the element thickness adjustment consistent with the thickness of the thickness of insulation course 18 and each dyed layer 6. this moment is as exposure method, preferably, for example use double exposure method or halftone exposure method. at this, so-called " double exposure method " is meant, 2 kinds of masks 70 that utilization structure is different and 75 are to respectively implementing 1 exposure method of (amounting to 2 exposures) respectively by the substrate of above-mentioned technology made.On the other hand, so-called " halftone exposure method " is meant, uses mask 76, and to only implement the method for 1 exposure by the substrate of above-mentioned technology made, this mask 76 comprises a part of low semi-transmissive film of light transmission of comparing with hyaline membrane.
At first, with reference to Figure 19, for adopting the double exposure method will be identical method with the thickness of insulation course 18 and the thickness setting of each dyed layer 6 with the corresponding element thickness adjustment of the subpixel area SG (regional transmission E10) of W, describe. also have, below, in photoetching technique, the explanation of each technology except that exposure technology is omitted or is simplified.
As mentioned above, the structure of mask 70 and mask 75 is different separately. and mask 70 is used for aforesaid substrate is carried out when exposure the 1st time, on the other hand, mask 75 is used for aforesaid substrate is carried out when exposure the 2nd time. also have, Figure 19 (a) and (b) shown in a plurality of arrows express the direct of travel of light such as UV (ultraviolet ray) or i ray.
At first, in Figure 19 (a), on substrate by above-mentioned technology P3 made, coating should become photoresist (resist) 18x. this moment that insulation course 18 is used in the element thickness adjustment, for example with R, G, when the thickness of each dyed layer 6 of B is made as d20, resist 18 by preset thickness d21 (=2 * d20) coatings. then, implement the 1st time exposure by the mask that the precalculated position disposed 70 on aforesaid substrate, implement subsequently to develop, etch processes, the useless resist 18x of presumptive area is removed. also have, the resist 18x that use this moment preferably, use the eurymeric resist, this eurymeric resist makes the resist in the zone that utilizes mask to be able to shading produce sclerosis, and the resist that utilizes mask to be able to exposed areas etc. is removed.
At this, mask 70 is shown in Figure 19 (a), and its structure possesses successively from a left side: complete exposed areas (being disposed at the regional corresponding position with SG (W)) is formed with the opening that light is passed through fully; The zone (being disposed at and SG (G), SG (R), the corresponding position of each reflector space E11 of SG (B)) of shading is made of the material with the complete shading of light fully; With complete exposed areas (being disposed at and SG (G), SG (R), the corresponding position of each regional transmission E10 of SG (B)).
Whereby, utilize that mask 70 has been exposed fully, formed on each dyed layer 6 of R, G, each regional transmission E10 of B, corresponding resist 18x (being equivalent to thickness d 20) with area E 50, and the resist 18x (be equivalent to thickness d 20) corresponding of the subpixel area SG of W with area E 51, removed respectively, that on the other hand, utilizes that mask 70 is able to complete shading is not removed with R, G, resist 18x that each reflector space E11 of B is corresponding and is able to remaining.
Then, utilize mask 75 to implement the 2nd exposure. at first, shown in Figure 19 (b), configuration mask 75 in precalculated position on aforesaid substrate is implemented the 2nd exposure by this mask 75, implements subsequently to develop, etch processes removes useless resist etc.
At this, mask 75 is shown in Figure 19 (b), and its structure possesses successively from a left side: the fully zone (being disposed at the corresponding position of each reflector space E11 with SG (G), SG (R), SG (B)) and the complete exposed areas (being disposed at the corresponding position of each regional transmission E10 with SG (G), SG (R), SG (B)) of the zone of shading (being disposed at the regional corresponding position with SG (W)), identical complete shading.
Whereby, utilize the resist 18x (be equivalent to thickness d 21) corresponding of each regional transmission E10 of R, G that mask 75 exposed fully, B to be removed fully with area E 52, on the other hand, utilize mask 75 be able to complete shading, the resist 18x corresponding with the subpixel area SG of W, and the resist 18x corresponding with each reflector space E11 of R, G, B, be not removed and be able to remaining.
By adopting double exposure method recited above, and become the state roughly the same with substrate shown in Figure 180, that is to say can with the element thickness adjustment corresponding with the subpixel area SG (regional transmission E10) of W with the thickness of insulation course 18 and and R, G, the thickness setting of each dyed layer 6 of each regional transmission E10 correspondence of B is identical. therefore, can with the thickness of the liquid crystal layer 4 corresponding with the subpixel area SG (regional transmission E10) of W (transparent) and and R, G, the thickness setting of the liquid crystal layer 4 of each regional transmission E10 correspondence of B is identical, can optical characteristics is set at identical in its both sides' zone.
Below, with reference to Figure 20, adopt for replacing the double exposure method element thickness adjustment that the halftone exposure method will be corresponding with the subpixel area SG (regional transmission E10) of W with the thickness of insulation course 18 and with the thickness setting of corresponding each dyed layer 6 of each regional transmission E10 of R, G, B be the method for same thickness, describe.
At first, as shown in figure 20, to coating of substrates resist 18x by above-mentioned technology P3 made.At this moment, for example when the thickness with R, G, each dyed layer 6 of B was made as d20, resist 18 was by preset thickness d21 (=2 * d20) coatings.Then, 76 of the masks that the precalculated position disposed by aforesaid substrate are implemented 1 exposure, subsequently to this substrate implement to develop, etch processes, useless resist etc. is removed.
At this, mask 76 as shown in figure 20, its structure possesses successively from a left side: the zone of halftone exposure (being disposed at regional corresponding position) with SG (W), adopt and to compare the low semi-transmissive film of light transmission with hyaline membrane and constitute; The zone (being disposed at the corresponding position of each reflector space E11) of complete shading with SG (G), SG (R), SG (B); And complete exposed areas (being disposed at the corresponding position of each regional transmission E10) with SG (G), SG (R), SG (B).
Whereby, utilize mask 76 be able to halftone exposure the resist 18x corresponding of subpixel area SG (regional transmission E10) of W with area E 54 form, amount by predetermined thickness d20 is removed by etching, its thickness attenuation, utilize in addition mask 76 be able to complete shading each the reflector space E11 with R, G, B corresponding resist 18x be not removed and be able to remainingly, utilize the resist 18x (be equivalent to thickness d 21) corresponding of each regional transmission E10 of R, G that mask 76 exposed fully, B to be removed fully in addition with area E 53.
By adopting halftone exposure method recited above, identical with above-mentioned double exposure method, can with the thickness of the corresponding liquid crystal layer 4 of the subpixel area SG (regional transmission E10) of W (transparent) and with the thickness setting of the corresponding liquid crystal layer 4 of each regional transmission E10 of R, G, B be identical, can make optical characteristics identical in its both sides' zone.
Then, as shown in figure 21, use on insulation course 18 and each dyed layer 6 etc. in the element thickness adjustment, the common electrode 8 that formation is made of ITO etc., and on this common electrode 8, form not shown alignment films (technology P5), next other are installed constitute device, for example (technology P6) such as polarizer 11 and polarization plates 12 is installed at the exterior side of upside substrate 2. so, with regard to the filter substrate 92. of the 1st embodiment shown in construction drawing 5 grades
Then, return Figure 15, adopt well-known method, come the device substrate 91 (technology S2) of the 1st embodiment shown in construction drawing 5 grades. next, by not shown encapsulant 5 bonding filter substrate 92 and device substrates 91, and by set opening in the sealing material 5, liquid crystal is enclosed in inside to these two substrates, adopt resin material etc. that this opening is carried out encapsulation process (technology S3) again. by necessary device (technology S4) in addition is installed, come the liquid-crystal apparatus 100 of the 1st embodiment shown in construction drawing 1 and Fig. 5 etc.
(manufacture method of the liquid-crystal apparatus that the 2nd embodiment is related)
Below, with reference to Figure 15, Figure 22 to Figure 25 etc., manufacture method for the related liquid-crystal apparatus 200 of the 2nd embodiment, describing. Figure 22 is the process flow diagram of the manufacture method of the related filter substrate 94 of expression the 2nd embodiment. and Figure 23 to Figure 25 represents and each corresponding artwork of technology S1 among Figure 15. and in Figure 23 to Figure 25, SG (W) and SG (G) represent subpixel area SG corresponding with W and the subpixel area SG corresponding with G respectively.In addition, E10 and E11 represent to become the zone and the zone that should become reflector space of regional transmission respectively. and also having, is an example with filter substrate shown in Figure 10 94 cross-section structures below, describes.
At first, make above-mentioned filter substrate 94 (technology S1). this filter substrate 94 is by making to technology R8 via technology R1.
Particularly, at first prepare the downside substrate 81 that constitutes by materials such as glass or quartz, next utilize photoetching technique, on this downside substrate 81, make resin bed 17 film forming that constitute by resin material etc., then, form small a plurality of concavo-convex (technology R1) in its surface by to carrying out etch processes etc. with R, G, resin bed 17 surfaces that each subpixel area SG of B is corresponding.
Then, form reflection horizon 65 (technology R2).Particularly, on the resin bed 17 corresponding with R, G, each reflector space E11 of B etc., make film forming such as Al, next will on the resin bed 17 corresponding, the part in the reflection horizon 65 of institute's film forming remove by etching with R, G, each regional transmission E10 of B etc. whereby, form the transmissive apertures zone 85 of function at R, G, each regional transmission E10 of B, and form reflection horizon 65. at R, G, each reflector space E11 of B at least with the transmittance of making
Then, adopt well-known method, form each dyed layer 6 (technology R3) of R, G, B. at this moment, for example, form corresponding each dyed layer 6R, 6G, 6B at the subpixel area SG that should form them according to the order of chromatograph 6B, dyed layer 6R, dyed layer 6G.Also have, the order that each dyed layer 6R, 6G, 6B are formed is not particularly limited.At this moment, form opening 6a at the dyed layer corresponding 6 simultaneously with each reflector space E11 of R, G, B, and the light shield layer 68 (referring to Fig. 8 (b)) that light shield layer 67 that 2 looks arbitrarily among the zone of dividing each dyed layer 6 forms dyed layer 6R, 6G, 6B overlap and 3 chromatic colorant layer 6R, 6G, 6B overlap, above-mentioned opening 6a have the function that shows uniform look at regional transmission E10 and reflector space E11.
Then, adopt well-known method, the diaphragm 19 that will be made of acryl resin etc. is formed at and R, G, position (technology R4) that each subpixel area SG of B is corresponding. and at this moment, be d7. from the distance setting to the protective seam 19 on the resin bed 17
Then; form element thickness adjustment insulation course 18 (technology R5). particularly; adopt and the identical method of filter substrate 92 of the 1st embodiment; reach and R at the resin bed corresponding 17 with the subpixel area SG of W; G; on each subpixel area SG protection layer corresponding 19 of B; make element thickness adjustment insulation course 18 film forming that constitute by transparent resin material; subsequently this substrate is implemented etch processes. at this moment; the element thickness adjustment with the thickness setting of insulation course 18 be d7. therefore; when adopting this manufacture method to produce liquid-crystal apparatus 100; can be with the thickness and the R of the liquid crystal layer 4 of the regional transmission E10 of W; G; the thickness setting of the liquid crystal layer 4 of each regional transmission E10 of B is identical, and can be with R; G; the thickness and the R of the liquid crystal layer 4 of each regional transmission E10 of B; G; the thickness setting of the liquid crystal layer 4 of each reflector space E11 of B is best thickness.
Particularly, in this technology, subpixel area SG and R at W, G, each reflector space E11 of B, form simultaneously respectively the element thickness adjustment that constitutes by same transparent resin material with insulation course 18. thereby, with the subpixel area SG and the R that have W, G, each reflector space E11 of B independently forms the element thickness adjustment with the manufacture method (comparative example) of the sort of technology of insulation course 18 when comparing, correspondingly just can seek the minimizing of technology. its result is, can seek to adopt the minimizing of the liquid-crystal apparatus cost of products that this manufacture method makes. in addition, can be as required, with with the identical aim of manufacture method of the related filter substrate 92 of above-mentioned the 1st embodiment, carry out technology (technology R6) that the element thickness adjustment is adjusted with the bed thickness of insulation course 18. also have, technology R6 as next technology of technology R5, can not be included among the technology R5 yet.
Then, on resin bed 17 and element thickness adjustment usefulness insulation course 18 etc., the stripscan electrode 64 that formation is made of ITO etc., next on these scan electrode 64 grades, form not shown alignment films (technology R7). next, other are installed constitute device, for example (technology R8) such as polarizer 13, polarization plates 14 and backlights 15 is installed at the exterior side of downside substrate 81. so, just can make the filter substrate 94. of the 2nd embodiment shown in Figure 10 etc.
Then, return Figure 15, adopt well-known method to make the device substrate 93 (technology S2) of the 2nd embodiment shown in Figure 10 etc. next, by the not shown frame shape encapsulant 5 of sneaking into a plurality of conducting parts 7, come bonding filter substrate 94 and device substrate 93, and, liquid crystal is enclosed in the inside of these two substrates by set opening in the sealing material 5, with resin material etc. this opening is carried out encapsulation process (technology S3) again.By necessary device (technology S4) in addition is installed, with regard to the liquid-crystal apparatus 200. of the 2nd embodiment shown in energy construction drawing 6 and Figure 10 etc.
[manufacture method of filter substrate (variation)]
Below, the manufacture method for having with the filter substrate 96 of the similar structure of modified configuration shown in Figure 12 describes.
Though filter substrate 96 is roughly the same with structure shown in Figure 12, but in the structure of Figure 12, having regional transmission E10 and reflector space E11 (that is to say, comprise corresponding structure) at the subpixel area SG of W with Figure 13 (b). Figure 26 (a) is the fragmentary cross-sectional view of these filter substrate 96 structures of expression.
At first, with reference to Figure 26 (a), carry out simple declaration for the structure of filter substrate 96. also have,, its explanation is omitted or simplified below for enclosing identical symbol with the top illustrated identical device of device.
As shown in the figure, the structure of filter substrate 96 is, R, G, B, each subpixel area SG of W have separately regional transmission E10 and reflector space E11. on the downside substrate 81 corresponding with the reflector space E11 of W and and R, G, on the downside substrate 81 of each reflector space E11 correspondence of B, form the reflection horizon 71. that constitutes by Al etc. respectively then, with R, G, on the downside substrate 81 of each regional transmission E10 correspondence of B and and R, G, on each reflection horizon 71 of each reflector space E11 correspondence of B, form dyed layer 6R respectively, 6G, 6B. therefore, as shown in the figure, with R, G, the thickness setting of each dyed layer 6 of each regional transmission E10 correspondence of B must be bigger than the thickness of formed dyed layer 6 on each reflection horizon 71. in addition, with R, G, on each dyed layer 6 of each reflector space E11 correspondence of B, on the downside substrate 81 corresponding with the regional transmission E10 of W and with the corresponding reflection horizon 71 of the reflector space E11 of W on, omitted diagram though form the element thickness adjustment that constitutes by same material respectively with insulation course 18., but for filter substrate 96 with this structure, with R, G, the thickness setting of the liquid crystal layer 4 of each regional transmission E10 correspondence of B is with identical with the thickness of the corresponding liquid crystal layer 4 of the regional transmission E10 of W, and and R, G, the thickness setting of the liquid crystal layer 4 of each reflector space E11 correspondence of B is with identical with the thickness of the corresponding liquid crystal layer 4 of the reflector space E11 of W.
Next, reach (c),, carry out simple declaration for the manufacture method of filter substrate 96 with this structure with reference to Figure 26 (b).Also have, only describe here for the technology suitable with the technology R5 of the technology P3 of Figure 16 and P4 or Figure 22 and R6.
Then, shown in Figure 26 (c), in photoetching technique, to implement halftone exposure method etc., useless element thickness adjustment is removed with insulation course 18. mask 79 its structures of using this moment possess fully and expose (being disposed at and R, G, position that each regional transmission E10 of B is corresponding), halftone exposure (being disposed at and R, G, position that each reflector space E11 of B is corresponding), identical halftone exposure (being disposed at the position corresponding with the regional transmission E10 of W) and complete shading (being disposed at the position corresponding with the reflector space E11 of W) successively from a left side.
Whereby, at R, G, each subpixel area SG of B, the element thickness adjustment corresponding with area E 50 (zone of snap ring shape) is removed with insulation course 18, and the element thickness adjustment corresponding with area E 51 (with dashed lines part area surrounded) is able to remaining with insulation course 18, in addition at the regional transmission E10 of W, the element thickness adjustment corresponding with area E 52 (with dashed lines part area surrounded) is removed with insulation course 18, and subpixel area SG at W, the element thickness adjustment corresponding with area E 53 is able to remaining with insulation course 18. so, just can make filter substrate 96 with said structure.
With regard to this manufacture method, preferably, with the thickness of R, G, dyed layer 6 that each regional transmission E10 of B is corresponding and with the corresponding element thickness adjustment of each regional transmission E10 of W be identical with the thickness setting of insulation course 18, and preferably, with R, G, each reflector space E11 of B corresponding comprise dyed layer 6 and element thickness adjustment with the thickness of insulation course 18 and with the corresponding element thickness adjustment of each reflector space E11 of W be identical with the thickness setting of insulation course 18.
Therefore, can obtain the above-mentioned the 1st and the action effect of the present invention of the liquid-crystal apparatus of the 2nd embodiment. also have, made filter substrate 96 though use the halftone exposure method in this example, but be not limited thereto, according to the present invention, self-evident, also can use the double exposure method to make filter substrate 96.
[electronic equipment]
Below, the embodiment when being used as the electronic equipment display device for the liquid- crystal apparatus 100 or 200 that uses the 1st and the 2nd embodiment involved in the present invention (comprise above-mentioned various variation, below identical) describes.
Figure 27 is the integrally-built summary construction diagram of expression present embodiment.The electronic equipment here have above-mentioned liquid- crystal apparatus 100 or 200 etc. and to its control gear of controlling 410. at this, with liquid- crystal apparatus 100 or 200 etc., be described at the conceptive driving circuit 402 that is divided into panel structure 403 and constitutes by semiconducter IC etc.In addition, control gear 410 has display message output source 411, display message treatment circuit 412, power circuit 413 and timing generator 414.
Display message output source 411 possesses: storer, by ROM (Read Only Memory, ROM (read-only memory)) or RAM formations such as (Random Access Memory, random access memory); Storage unit is made of magnetic recording disk or optical recording etc.; And tuned circuit, be used for digital picture is carried out tuning output; It constitutes, and according to the various clock signals that generated by timing generator 414, with the forms such as picture signal of predetermined format display message is supplied with display message treatment circuit 412.
Display message treatment circuit 412 possesses well-known various circuit such as serial-to-parallel change-over circuit, amplification/negative circuit, rotation circuit, gray-scale factor correction circuit and clamp circuit, carry out the processing of the display message of being imported, this image information and clock signal clk are supplied with driving circuit 402 together.Driving circuit 402 comprises scan line drive circuit, data line drive circuit and check circuit.In addition, 413 pairs of power circuits are above-mentioned respectively constitutes device and supplies with predetermined voltage respectively.
Below, for liquid-crystal apparatus 100 that can use the of the present invention the 1st and the 2nd embodiment (comprising above-mentioned various variation) or 200 the concrete example of electronic equipment, describe with reference to Figure 28.
At first, for the of the present invention the 1st and the 2nd embodiment (is comprised above-mentioned various variation, below identical) liquid- crystal apparatus 100 or 200 etc. be used for the example of portable personal computer (so-called notebook-PC) display part, describing. Figure 28 (a) is the stereographic map of this personal computer architecture of expression. shown in figure, personal computer 710 possesses: main part 712 possesses keyboard 711; With display part 713, use liquid-crystal apparatus involved in the present invention to be used as panel.
Next, for the example that the liquid-crystal apparatus 100 of the of the present invention the 1st and the 2nd embodiment (comprising above-mentioned various variation) or 200 etc. is used in the portable telephone display part, describing. Figure 28 (b) is the stereographic map of this portable telephone structure of expression. shown in figure, portable telephone 720 except a plurality of action buttons 721, the display part 724. that also possesses receiving mouth 722, mouth piece 723 and use the related liquid-crystal apparatus of the 1st to the 3rd embodiment of the present invention
Also have, electronic equipment as the liquid-crystal apparatus 100 that can use the of the present invention the 1st and the 2nd embodiment (comprising above-mentioned various variation) or 200 etc., except the portable telephone shown in the personal computer shown in Figure 28 (a) and Figure 28 (b), can also enumerate LCD TV, view finder formula/supervision direct viewing type video tape recorder, automobile navigation apparatus, pager, electronic notebook, desk-top electronic calculator, word processor, workstation, videophone, POS terminal and digital static camera etc.
Claims (17)
1. liquid-crystal apparatus, its have at least with the corresponding display pixel of W and with the 1 look corresponding display pixel different with above-mentioned W, the above-mentioned display pixel with above-mentioned 1 look corresponding possesses regional transmission and reflector space, and the above-mentioned display pixel of above-mentioned W only possesses regional transmission, wherein, above-mentioned W refers to transparent or white, being characterized as of this liquid-crystal apparatus
Possess:
Substrate;
The subtend substrate, itself and aforesaid substrate subtend dispose;
Dyed layer, it is provided to the above-mentioned display pixel with above-mentioned 1 look corresponding of aforesaid substrate or above-mentioned subtend substrate;
Element thickness is adjusted layer, and it is arranged at aforesaid substrate or above-mentioned subtend substrate, is provided to the above-mentioned reflector space of the above-mentioned display pixel with above-mentioned 1 look corresponding and the above-mentioned regional transmission of above-mentioned W; And
Liquid crystal layer, it is held on aforesaid substrate and above-mentioned subtend substrate, thickness corresponding to the above-mentioned regional transmission of the above-mentioned display pixel corresponding with above-mentioned 1 look, adjust the thickness of layer corresponding to said units thickness, thicker than thickness corresponding to the above-mentioned reflector space of the above-mentioned display pixel corresponding with above-mentioned 1 look.
2. liquid-crystal apparatus, its have at least with the corresponding display pixel of W and with the 1 look corresponding display pixel different with above-mentioned W, above-mentioned display pixel with above-mentioned 1 look corresponding and the above-mentioned display pixel of above-mentioned W possess regional transmission and reflector space respectively, wherein, above-mentioned W refers to transparent or white, it is characterized by
Possess:
Substrate;
The subtend substrate, itself and aforesaid substrate subtend dispose;
Dyed layer, it is provided to the above-mentioned display pixel with above-mentioned 1 look corresponding of aforesaid substrate or above-mentioned subtend substrate;
Element thickness is adjusted layer, it is arranged at aforesaid substrate or above-mentioned subtend substrate, and be provided to the above-mentioned reflector space of the above-mentioned display pixel of the above-mentioned regional transmission of above-mentioned display pixel of the above-mentioned at least reflector space of the above-mentioned display pixel with above-mentioned 1 look corresponding, above-mentioned W and above-mentioned W, the thickness of the above-mentioned reflector space of the above-mentioned display pixel of above-mentioned W is thicker than the thickness of the above-mentioned regional transmission of the above-mentioned display pixel of above-mentioned W; And
Liquid crystal layer, it is held on aforesaid substrate and above-mentioned subtend substrate, thickness corresponding to the above-mentioned regional transmission of the above-mentioned display pixel of above-mentioned display pixel corresponding and above-mentioned W with above-mentioned 1 look, adjust the thickness of layer corresponding to said units thickness, thicker than thickness corresponding to the above-mentioned reflector space of the above-mentioned display pixel of above-mentioned display pixel corresponding and above-mentioned W with above-mentioned 1 look.
3. liquid-crystal apparatus according to claim 1 and 2 is characterized by:
At above-mentioned display pixel corresponding and the above-mentioned display pixel of above-mentioned W, be respectively arranged with the said units thickness that constitutes by same material and adjust layer with above-mentioned 1 look.
4. liquid-crystal apparatus according to claim 1 and 2 is characterized by:
Adjust the thickness of layer at the set said units thickness of the above-mentioned reflector space of the above-mentioned display pixel corresponding, be set at and the identical thickness of thickness of adjusting layer at the set said units thickness of above-mentioned regional transmission of the above-mentioned display pixel of above-mentioned W with above-mentioned 1 look.
5. liquid-crystal apparatus according to claim 1 and 2 is characterized by:
Corresponding to the thickness of the above-mentioned liquid crystal layer of the above-mentioned regional transmission of the above-mentioned display pixel corresponding, be set at and the identical thickness of thickness corresponding to the above-mentioned liquid crystal layer of the above-mentioned regional transmission of above-mentioned W with above-mentioned 1 look.
6. liquid-crystal apparatus according to claim 1 and 2 is characterized by:
The thickness of the above-mentioned dyed layer corresponding with above-mentioned regional transmission is thicker than the thickness of the above-mentioned dyed layer corresponding with above-mentioned reflector space.
7. liquid-crystal apparatus according to claim 1 and 2 is characterized by:
In aforesaid substrate and position above-mentioned subtend substrate either party, corresponding with above-mentioned reflector space, be provided with the reflection horizon that has the effect of light reflection.
8. electronic equipment is characterized by:
Possess claim 1 or 2 described liquid-crystal apparatus, be used as display part.
9. the manufacture method of a liquid-crystal apparatus, this liquid-crystal apparatus have at least with the corresponding display pixel of W and with the 1 look corresponding display pixel different with above-mentioned W, the above-mentioned display pixel with above-mentioned 1 look corresponding possesses regional transmission and reflector space, and the above-mentioned display pixel of above-mentioned W possesses regional transmission at least, thickness corresponding to the liquid crystal layer of the above-mentioned regional transmission of the above-mentioned display pixel corresponding with above-mentioned 1 look, set to such an extent that ratio is thick corresponding to the thickness of the liquid crystal layer of the above-mentioned reflector space of the above-mentioned display pixel with above-mentioned 1 look corresponding, wherein, above-mentioned W refers to transparent or white; Being characterized as of this manufacture method,
Comprise:
Dyed layer forms technology, wherein, on matrix material, the above-mentioned display pixel with above-mentioned 1 look corresponding is formed dyed layer; With
Element thickness is adjusted layer and is formed technology, wherein, on above-mentioned matrix material, the above-mentioned regional transmission at the above-mentioned display pixel of the above-mentioned reflector space of the above-mentioned display pixel with above-mentioned 1 look corresponding and above-mentioned W forms the element thickness that is made of transparent material simultaneously and adjusts layer.
10. the manufacture method of liquid-crystal apparatus according to claim 9 is characterized by:
The above-mentioned display pixel of above-mentioned W does not possess reflector space.
11. the manufacture method of liquid-crystal apparatus according to claim 9 is characterized by:
The above-mentioned display pixel of above-mentioned W possesses reflector space,
The thickness of the liquid crystal layer corresponding with the above-mentioned regional transmission of the above-mentioned display pixel of above-mentioned W, thicker than the thickness of the liquid crystal layer corresponding with the above-mentioned reflector space of the above-mentioned display pixel of above-mentioned W,
Said units thickness is adjusted layer and is formed technology, on above-mentioned matrix material, at the above-mentioned regional transmission and the above-mentioned reflector space of the above-mentioned display pixel of the above-mentioned reflector space of the above-mentioned display pixel corresponding, above-mentioned W, form said units thickness simultaneously and adjust layer with above-mentioned 1 look.
12. the manufacture method according to each described liquid-crystal apparatus in the claim 9 to 11 is characterized by:
Above-mentioned dyed layer forms technology, forms opening at the above-mentioned dyed layer that is positioned at above-mentioned reflector space.
13. the manufacture method according to each described liquid-crystal apparatus in the claim 9 to 11 is characterized by:
Said units thickness is adjusted layer and is formed technology, and said units thickness adjustment layer is formed the thickness identical with above-mentioned dyed layer.
14. the manufacture method according to each described liquid-crystal apparatus in the claim 9 to 11 is characterized by:
Said units thickness adjustment layer forms technology and comprises the layer thickness adjusting process,
This layer thickness adjusting process comprises:
The resist coated technique wherein, on the above-mentioned dyed layer of the above-mentioned display pixel of above-mentioned W and the above-mentioned display pixel with above-mentioned 1 look corresponding, applies resist;
The 1st exposure technology wherein, after above-mentioned resist being carried out 1 exposure by the 1st mask, implement to be developed and etch processes, and above-mentioned the 1st mask comprises with the complete exposure area of the complete transmission of light and with the complete lightproof area of the complete shading of above-mentioned light; And
The 2nd exposure technology, wherein, after implementing above-mentioned resist coated technique once more, by the 2nd mask to above-mentioned resist carry out 1 time the exposure after, implement to develop and etch processes, above-mentioned the 2nd mask comprises that above-mentioned complete exposure area and above-mentioned complete lightproof area, its formation are different with above-mentioned the 1st mask;
Above-mentioned layer thickness adjusting process is adjusted the thickness of above-mentioned dyed layer of the above-mentioned regional transmission of layer and the above-mentioned display pixel with above-mentioned 1 look corresponding at the set said units thickness of the above-mentioned regional transmission of above-mentioned W to the major general, be set at identical.
15. the manufacture method according to each described liquid-crystal apparatus in the claim 9 to 11 is characterized by:
Said units thickness adjustment layer forms technology and comprises the layer thickness adjusting process,
This layer thickness adjusting process comprises:
The resist coated technique wherein, on the above-mentioned dyed layer of the above-mentioned display pixel of above-mentioned W and the above-mentioned display pixel with above-mentioned 1 look corresponding, applies resist; With
Halftone exposure technology, wherein, implement to develop and etch processes after above-mentioned resist being carried out at least 1 exposure by following mask, this mask comprises: with the complete exposure area of the complete transmission of light, with the complete lightproof area of the complete shading of above-mentioned light and the halftone exposure zone with semi-transmissive film;
Above-mentioned layer thickness adjusting process is adjusted the thickness of above-mentioned dyed layer of the above-mentioned regional transmission of layer and the above-mentioned display pixel with above-mentioned 1 look corresponding at the set said units thickness of the above-mentioned regional transmission of above-mentioned W to the major general, be set at identical.
16. the manufacture method according to each described liquid-crystal apparatus in the claim 9 to 11 is characterized by:
Have diaphragm and form technology between above-mentioned dyed layer formation technology and said units thickness adjustment layer formation technology, this diaphragm forms technology and form diaphragm on the above-mentioned dyed layer of the above-mentioned display pixel with above-mentioned 1 look corresponding,
Said units thickness is adjusted layer and is formed a technology, and on the said protection film in the above-mentioned reflective display region territory of the above-mentioned display pixel of above-mentioned W and the above-mentioned display pixel corresponding, form said units thickness and adjust layer with above-mentioned 1 look,
Said units thickness is adjusted layer and is formed a technology, adjusts the thickness of above-mentioned dyed layer of the above-mentioned regional transmission of layer and the above-mentioned display pixel with above-mentioned 1 look corresponding at the set said units thickness of the above-mentioned regional transmission of above-mentioned W to the major general, is set at identical.
17. the manufacture method according to each described liquid-crystal apparatus in the claim 9 to 11 is characterized by:
The preceding technology that forms technology as above-mentioned dyed layer has reflection horizon formation technology, and this reflection horizon forms technology on above-mentioned matrix material, forms the reflection horizon at above-mentioned reflector space.
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| JP2005197074 | 2005-07-06 | ||
| JP197074/2005 | 2005-07-06 | ||
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| CN100424557C true CN100424557C (en) | 2008-10-08 |
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| CN101498870B (en) * | 2008-01-31 | 2012-01-18 | 上海天马微电子有限公司 | Reflective-transmissive liquid crystal display device |
| CN103529586B (en) * | 2012-07-16 | 2016-01-20 | Tcl集团股份有限公司 | Color filter film, color filter film display unit and array structure thereof |
| CN102879947B (en) * | 2012-09-27 | 2015-10-14 | 京东方科技集团股份有限公司 | Colored filter and manufacture method thereof, semitransparent semi-reflective liquid crystal display device |
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| JP2002055335A (en) * | 2001-05-28 | 2002-02-20 | Matsushita Electric Ind Co Ltd | Liquid crystal display device |
| US20040046725A1 (en) * | 2002-09-11 | 2004-03-11 | Lee Baek-Woon | Four color liquid crystal display and driving device and method thereof |
| CN1484071A (en) * | 2002-05-04 | 2004-03-24 | 三星电子株式会社 | LCD device and filtering color picec array board |
| US20040114077A1 (en) * | 2002-12-17 | 2004-06-17 | Industrial Technology Research Institute | Transflective liquid crystal display device having various cell gaps and method of fabricating the same |
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Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002055335A (en) * | 2001-05-28 | 2002-02-20 | Matsushita Electric Ind Co Ltd | Liquid crystal display device |
| CN1484071A (en) * | 2002-05-04 | 2004-03-24 | 三星电子株式会社 | LCD device and filtering color picec array board |
| US20040046725A1 (en) * | 2002-09-11 | 2004-03-11 | Lee Baek-Woon | Four color liquid crystal display and driving device and method thereof |
| US20040114077A1 (en) * | 2002-12-17 | 2004-06-17 | Industrial Technology Research Institute | Transflective liquid crystal display device having various cell gaps and method of fabricating the same |
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